KR20040070660A - Particle removing device - Google Patents

Particle removing device Download PDF

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Publication number
KR20040070660A
KR20040070660A KR1020030006834A KR20030006834A KR20040070660A KR 20040070660 A KR20040070660 A KR 20040070660A KR 1020030006834 A KR1020030006834 A KR 1020030006834A KR 20030006834 A KR20030006834 A KR 20030006834A KR 20040070660 A KR20040070660 A KR 20040070660A
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KR
South Korea
Prior art keywords
wafer
particle removal
particle
bath
gas
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KR1020030006834A
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Korean (ko)
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KR100567873B1 (en
Inventor
한경수
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아남반도체 주식회사
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Priority to KR1020030006834A priority Critical patent/KR100567873B1/en
Publication of KR20040070660A publication Critical patent/KR20040070660A/en
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Publication of KR100567873B1 publication Critical patent/KR100567873B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE: An apparatus for removing particles is provided to remove easily the particles from a wafer and enhance the productivity by using a surface active agent and an N2 gas. CONSTITUTION: A gas injection hole(42) is formed at a lower part of a particle removal bath(40). A surface active agent is stored in the inside of thee particle removal bath. A wafer grip part(52) having an open upper portion is inserted into a rotary shaft(54). An elevation part(60) is used for elevating the wafer grip part. A rotation part(70) is used for rotating the rotary shaft. A transfer arm(80) is used for transferring the wafer grip part to an upper part of the particle removal bath.

Description

파티클 제거 장치{PARTICLE REMOVING DEVICE}Particle Removal Device {PARTICLE REMOVING DEVICE}

본 발명은 파티클 제거장치에 관한 것으로, 더욱 상세하게는 계면 활성제가 담긴 배스(Bath)내에 웨이퍼를 담근 후 45°경사지게 한다음 N2가스를 하방에서 분사하여 미세한 스몰 파티클(small particle)까지 제거할 수 있는 파티클 제거장치에 관한 것이다.The present invention relates to an apparatus for removing particles, and more particularly, soaking a wafer in a bath containing a surfactant and inclining 45 ° and then removing N 2 gas downward to remove fine small particles. A particle removal apparatus that can

반도체 제조 공정에 있어서, 웨이퍼가 대구경화됨에 따라 웨이퍼의 넓어진 면을 평탄화하기 위해서 화학적인 제거가공과 기계적인 제거가공을 하나의 가공방법으로 혼합한 화학적 기계적 연마(Chemical-Mechanical Polishing; 이하 "CMP"라 한다) 장비가 이용되고 있다.In the semiconductor manufacturing process, chemical-mechanical polishing ("CMP"), which combines chemical removal processing and mechanical removal processing in one processing method to flatten the widened surface of the wafer as the wafer is large-sized. Equipment is being used.

이러한 CMP 장비는 도 1에 도시된 바와 같이, 웨이퍼를 헤드에 로딩 및 언로딩하는 HCLU(12)와, 제 1내지 제 3 플래튼(14,16,18)으로 구성되어, 단차를 가진 웨이퍼 표면을 폴리싱 패드위에 밀착시킨후, 연마제와 화학물질이 포함된 슬러리(slurry)를 웨이퍼와 폴리싱 패드사이에 주입시켜 웨이퍼의 표면을 평탄화시키는 폴리서(polisher)(10)와, 웨이퍼가 들어오는 입력부(22)와, NH4OH와, H2O2와, DI로 이루어진 SCI 용액을 사용하여 세정하는 초음파 발생 배스(24)와, NH4OH를 사용하여 세정하는 제 1 브러쉬부(26)와, HF를 사용하여 세정하는 제 2 브러쉬부(28)와, 웨이퍼를 말리는 SRD(Spin Rinse Dry)(30)와, 웨이퍼를 SMIF로 보내는 출력부(32)로 구성되어, 폴리싱이 끝난 후 웨이퍼의 표면에 묻은 파티클들을 제거하는 크리너(cleaner)(20)로 구성된다.This CMP apparatus is composed of a HCLU 12 for loading and unloading a wafer into a head and a first to third platens 14, 16 and 18, as shown in FIG. Is adhered on the polishing pad, and then a slurry containing abrasive and chemical is injected between the wafer and the polishing pad to planarize the surface of the wafer, and an input portion 22 into which the wafer enters. ), An ultrasonic wave generator 24 for cleaning using an SCI solution composed of NH 4 OH, H 2 O 2 , and DI, a first brush portion 26 for cleaning using NH 4 OH, and HF. And a second brush portion 28 for cleaning, a spin rinse dry (SRD) 30 for drying the wafer, and an output portion 32 for sending the wafer to SMIF. Particles deposited on the surface of the wafer after polishing are finished. It consists of a cleaner 20 to remove them.

이러한 CMP 장비는 어느 정도 크기의 파티클은 제거되지만, 아주 미세한 스몰 파티클의 경우, 통상 잘 떨어지지 않거나 다른 원인으로 발생하는 바, 아직까지 완전하게 제거하기에는 별다른 방안이 없었다.Such CMP equipment removes particles of some size, but in the case of very small particles, they usually do not fall well or are caused by other causes.

따라서, 본 발명은 이에 따라 안출된 것으로, 그 목적은 스몰 파티클까지 제거할 수 있는 파티클 제거장치를 제공하는 것이다.Accordingly, the present invention has been devised accordingly, and an object thereof is to provide a particle removing apparatus capable of removing even small particles.

이러한 목적을 달성하기 위한 수단으로서, 본 발명의 파티클 제거장치는 하부에 가스 분출구가 형성되어, 계면활성제가 담긴 파티클 제거 배스와, 상면이 개방된 웨이퍼 파지부가 개재된 회전축과, 상기 파지부를 상하로 승강하는 승강수단과, 상기 회전축을 회전하는 회전수단과, 상기 파지부를 상기 배스의 상부에 위치시키는 이송 아암으로 이루어진 것을 특징으로 한다.As a means for achieving the above object, the particle removal device of the present invention is formed with a gas outlet in the lower portion, the particle removal bath containing the surfactant, the rotating shaft is interposed between the wafer holding part with an open top, and the holding part up and down And an elevating means for elevating to, an elevating means for rotating the rotary shaft, and a transfer arm for positioning the gripping portion on the top of the bath.

본 발명에 의하면, 계면활성제에 의해 웨이퍼에 묻은 파티클의 접착력이 떨어지게되어 파티클이 용이하게 제거되고, 또한 웨이퍼의 표면이 45°경사져 있는 상태에서 N2가스가 분사되므로, 더욱 용이하게 파티클이 제거되어, 수율이 향상되는 효과를 가진다.According to the present invention, since the adhesion force of the particles adhered to the wafer is reduced by the surfactant, the particles are easily removed, and since the N 2 gas is injected while the surface of the wafer is inclined at 45 °, the particles are more easily removed. As a result, the yield is improved.

도 1은 CMP 장비의 구성 배열을 나타내는 개략도이고.1 is a schematic diagram showing a configuration arrangement of CMP equipment.

도 2는 본 발명의 일실시예에 따른 파티클 제거장치의 구성을 나타내는 개략 정단면도이고,Figure 2 is a schematic front cross-sectional view showing the configuration of the particle removal apparatus according to an embodiment of the present invention,

도 3는 도 2의 측면도이다.3 is a side view of FIG. 2.

<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>

40 : 파티클 제거 배스 42 : N2 가스 분출구40: particle removal bath 42: N2 gas outlet

52 : 웨이퍼 파지부 54 : 회전축52 wafer holding portion 54 rotation axis

60 : 승강수단 70 : 회전수단60: lifting means 70: rotating means

80 : 이송아암 90 : 로봇80: transfer arm 90: robot

이하, 첨부된 도면을 참조로 하여 본 발명의 바람직한 일실시예에 따른 파티클 제거장치를 상세히 설명한다.Hereinafter, with reference to the accompanying drawings will be described in detail a particle removal device according to an embodiment of the present invention.

도 2 및 도 3은 본 발명의 바람직한 일실시예에 따른 파티클 제거장치를 도시한다. 도시된 바와 같이, 파티클 제거 배스(40)와, 상면이 개방된 웨이퍼 파지부(52)가 개재된 회전축(54)과, 상기 파지부(52)를 상하로 승강하는 승강수단(60)과, 상기 회전축(54)을 회전하는 회전수단(70)과, 상기 파지부(52)를 상기 배스(40)의 상부에 위치시키는 이송 아암(80)으로 이루어진다.2 and 3 show a particle removing apparatus according to a preferred embodiment of the present invention. As shown, the particle removal bath 40, the rotating shaft 54 is interposed between the wafer holding portion 52, the upper surface is opened, the elevating means 60 for elevating the holding portion 52 up and down, Rotation means 70 for rotating the rotary shaft 54, and the transfer arm 80 for positioning the gripping portion 52 on the bath 40.

파티클 제거 배스(40)에는 하부에 N2가스 분출구(42)가 형성되며, 내부에 계면활성제가 담겨져 있다. 계면활성제는 잘 알려진 바와 같이, 웨이퍼에 묻은 파티클사이에 스며들어 파티클이 더욱 잘 떨어지게 하는 용액이다.In the particle removal bath 40, an N 2 gas jet port 42 is formed at a lower portion thereof, and a surfactant is contained therein. Surfactants, as is well known, are solutions that permeate between particles on a wafer and cause particles to fall better.

회전수단(70)에 의해 회전되는 회전축(54)은 45°회전되어 웨이퍼 파지부(52)내에파지된 웨이퍼의 표면이 45°경사져서 가스 분출구(52)를 통해 분사되는 N2가스에 부딪치므로서, 웨이퍼의 표면에 묻은 파티클을 용이하게 제거한다.The rotating shaft 54 rotated by the rotating means 70 is rotated 45 degrees so that the surface of the wafer held in the wafer holding portion 52 is inclined 45 degrees to hit the N 2 gas injected through the gas jet 52. Therefore, the particles on the surface of the wafer can be easily removed.

이와 같이 구성된 본 발명이 파티클 제거장치는 크리너의 입력부와 초음파 발생 배스사이에 설치되어, N2가스의 분사에도 불구하고 제거되지 않은 미세한 파티클이 계면활성제에 의해 접착력이 약해져 있으므로, 이후의 초음파 발생 배스와, 브러쉬부에서의 화학약품에 의해 완전하게 제거된다.The particle removing device of the present invention configured as described above is installed between the cleaner input unit and the ultrasonic generating bath, and thus the fine particles which are not removed despite the injection of N 2 gas are weakened by the surfactant, so that the ultrasonic generating bath is thereafter. And completely removed by the chemicals in the brush portion.

이상가 같이 구성된 파티클 제거장치의 작동은 다음과 같다.The operation of the particle removal device configured as described above is as follows.

먼저, 이송아암(80)을 작동하여 파지부(52)를 배스(40)의 상부에 위치시킨다. 이어서, 로봇(90)으로 웨이퍼를 파지부(52)에 로딩한다. 이후, 승강수단(60)을 화살표 방향으로 구동하여 웨이퍼를 파지한 파지부(52)를 하강하여 계면활성제가 담긴 파티클 제거 배스(40)에 넣고, 회전수단(70)을 구동하여 웨이퍼의 표면이 45°경사지게 회전축(54)을 회전한다. 마지막으로, N2가스 분출구(42)로부터 웨이퍼의 경사 표면에 N2가스를 분사하여 파티클을 제거한 후, 재차 승강수단(60)을 구동하여 파지부(52)를 상승시키면, 로봇(90)이 웨이퍼를 웨이퍼 파지부(52)로부터 언로딩한다.First, the transfer arm 80 is operated to position the gripping portion 52 at the top of the bath 40. Subsequently, the wafer 90 is loaded into the grip portion 52 by the robot 90. Subsequently, the elevating means 60 is driven in the direction of the arrow to lower the gripping portion 52 holding the wafer and placed in the particle removal bath 40 containing the surfactant, and the rotating means 70 is driven to drive the surface of the wafer. Rotate the axis of rotation 54 by 45 °. Finally, after the N 2 gas is injected from the N 2 gas jet port 42 to the inclined surface of the wafer to remove particles, the robot 90 is driven by raising the holding unit 52 by driving the elevating means 60 again. The wafer is unloaded from the wafer gripper 52.

상술한 바와 같이 본 발명의 파티클 제거장치는 계면활성제에 의해 웨이퍼에 묻은 파티클의 접착력이 떨어지게되어 파티클이 용이하게 제거되고, 또한 웨이퍼의 표면이 45°경사져 있는 상태에서 N2가스가 분사되므로, 더욱 용이하게 파티클이 제거되어, 수율이 향상되는 효과를 가진다.As described above, the particle removal device of the present invention is because the adhesion of the particles adhered to the wafer by the surfactant is reduced, the particles are easily removed, and since the N 2 gas is injected while the surface of the wafer is inclined 45 °, Particles are easily removed, and the yield is improved.

Claims (4)

파티클 제거장치에 있어서,In the particle removal device, 하부에 가스 분출구(42)가 형성되어, 계면활성제가 담긴 파티클 제거 배스(40)와,The gas blowing port 42 is formed in the lower portion, the particle removal bath 40 containing the surfactant, 상면이 개방된 웨이퍼 파지부(52)가 개재된 회전축(54)과,A rotating shaft 54 having a wafer holding portion 52 with an open top surface interposed therebetween, 상기 파지부(52)를 상하로 승강하는 숭강수단(60)과,Soong-gang means 60 for elevating the grip portion 52 up and down, 상기 회전축(54)을 회전하는 회전수단(70)과,Rotating means 70 for rotating the rotary shaft 54, 상기 파지부(52)를 상기 배스(40)의 상부에 위치시키는 이송 아암(80)으로 이루어진 것을 특징으로 하는 파티클 제거장치Particle removal device, characterized in that consisting of the transfer arm 80 for positioning the gripping portion 52 on top of the bath 40 제 1 항에 있어서, 상기 파티클 제거장치는 크리너의 입력부와 초음파 발생 배스사이에 설치되는 것을 특징으로 하는 파티클 제거장치.The particle removing device of claim 1, wherein the particle removing device is installed between an input of a cleaner and an ultrasonic wave generator. 제 1 항에 있어서, 상기 회전축(54)은 45°회전되어 웨이퍼 파지부(52)내의 웨이퍼의 표면이 45°경사져서 N2가스에 분사되는 것을 특징으로 하는 파티클 제거장치.2. The particle removing apparatus according to claim 1, wherein the rotating shaft (54) is rotated 45 degrees so that the surface of the wafer in the wafer holding portion (52) is inclined at 45 degrees and injected into the N 2 gas. 파티클 제거방법에 있어서,In the particle removal method, 파지부(52)에 웨이퍼를 파지하는 단계와,Holding the wafer in the gripper 52; 웨이퍼를 파지한 파지부(52)를 하강하여 계면활성제가 담긴 파티클 제거 배스(40)에 넣는 단계와,Lowering the holding part 52 holding the wafer and placing it in the particle removal bath 40 containing the surfactant; 웨이퍼를 45°경사지게 회전축(54)을 회전하는 단계와,Rotating the rotating shaft 54 to tilt the wafer at 45 °; 상기 파티클 제거 배스(40)의 하부에 형성된 N2가스 분출구(42)로부터 웨이퍼의 경사 표면에 N2가스를 분사하는 단계와,Spraying N 2 gas onto the inclined surface of the wafer from the N 2 gas jet port 42 formed in the lower portion of the particle removal bath 40; 상기 파지부(52)를 상승하여 웨이퍼를 제거하는 단계로 이루어진 것을 특징으로 하는 파티클 제거 방법.Particle removal method comprising the step of removing the wafer by raising the holding portion (52).
KR1020030006834A 2003-02-04 2003-02-04 Particle removing device KR100567873B1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101442399B1 (en) * 2012-03-08 2014-09-17 다이니폰 스크린 세이조우 가부시키가이샤 Substrate treating apparatus and substrate treating method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101442399B1 (en) * 2012-03-08 2014-09-17 다이니폰 스크린 세이조우 가부시키가이샤 Substrate treating apparatus and substrate treating method

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