KR20040059324A - Epoxy Resin Composition for Encapsulating Semiconductor Device - Google Patents

Epoxy Resin Composition for Encapsulating Semiconductor Device Download PDF

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KR20040059324A
KR20040059324A KR1020020085933A KR20020085933A KR20040059324A KR 20040059324 A KR20040059324 A KR 20040059324A KR 1020020085933 A KR1020020085933 A KR 1020020085933A KR 20020085933 A KR20020085933 A KR 20020085933A KR 20040059324 A KR20040059324 A KR 20040059324A
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epoxy resin
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weight
formula
coupling agent
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KR100527826B1 (en
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김익수
김재신
홍용우
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제일모직주식회사
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/14Polycondensates modified by chemical after-treatment
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/68Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
    • C08G59/686Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used containing nitrogen
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/01Use of inorganic substances as compounding ingredients characterized by their specific function
    • C08K3/013Fillers, pigments or reinforcing additives
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/18Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20Oxides; Hydroxides
    • C08K3/22Oxides; Hydroxides of metals
    • C08K3/2279Oxides; Hydroxides of metals of antimony
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/0008Organic ingredients according to more than one of the "one dot" groups of C08K5/01 - C08K5/59
    • C08K5/0025Crosslinking or vulcanising agents; including accelerators
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2190/00Compositions for sealing or packing joints

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

PURPOSE: An epoxy resin composition for semiconductor device package is provided, to prevent the generation of crack between a pad face and a chip due to Pb free state in high temperature soldering and to reduce the adhesion of an epoxy packaging material and a wafer chip. CONSTITUTION: The epoxy resin composition comprises an o-cresol novolac epoxy resin of the formula 1; a diglycidyl ether bisphenol modified epoxy resin of the formula 2; a phenol novolac resin; a coupling agent obtained by pretreating the coupling agent represented by SiX3-(CH2)3-O-CH2R (wherein R is a cycloepoxy, amino, methacryl, mercapto or vinyl group, X's are identical or different one another and are a methoxy or ethoxy group) with glycols or distilled water; a coupling agent represented by SiX3-(CH2)3-O-CH2R; a curing accelerator; an inorganic filler; a brominated epoxy resin; antimony trioxide; and other additives. In the formulas 1 and 2, R is OH or CH3, G is a glycidyl group and n is an integer of 0-3; and in the formula 3, R is H or CH3, G is a glycidyl group and n is an integer of 0-3.

Description

반도체 소자 밀봉용 에폭시 수지 조성물 {Epoxy Resin Composition for Encapsulating Semiconductor Device}Epoxy Resin Composition for Encapsulating Semiconductor Device

본 발명은 반도체 소자 밀봉용 에폭시수지 조성물에 관한 것으로, 보다 상세하게는 디글리시딜 이써 비스페놀 변성 에폭시 수지와 2종 이상의 커플링제를 사용하며, 무기충전제를 고충진함에 의해 열충격, 특히 반도체 후 공정에서 납 프리(Pb Free)시 발생되는 고온의 솔더공정시, 패드 면과 칩에 발생되는 크랙 문제를 개선하고, 에폭시봉지재와 웨이퍼칩 사이에 발생하는 접착문제를 감소시킴으로써 고신뢰성을 유지하는 반도체 소자 밀봉용 에폭시수지 조성물에 관한 것이다.The present invention relates to an epoxy resin composition for sealing a semiconductor device, and more particularly, a diglycidyl ether bisphenol-modified epoxy resin and two or more coupling agents, and a high thermal filler, particularly post-semiconductor process by high filling inorganic fillers Semiconductor that maintains high reliability by improving crack problem on pad surface and chip and reducing adhesion problem between epoxy encapsulant and wafer chip during high temperature solder process in Pb free An epoxy resin composition for sealing elements.

반도체 밀봉용 봉지재료로써 에폭시 수지 조성물이 채택된 이후로 최근 표면실장기술의 진보에 따라 프린터기판에 반도체 패키지를 실장할 때의 작업성, 생산성이 획기적으로 향상되었다. 또한 전자전기 부품의 단소경박화가 가속화되어, 이에 따른 에폭시수지 조성물의 저응력화, 내습성화, 고접착력의 요구는 나날이 증가되고 있는 실정이다. 여기에 환경 친화성의 문제로 인해 후 공정인 솔더(SOLDER)에서 납이 사용되지 않는 공정이 개발 중이며, 이로 인해 솔더 공정상의 온도가230℃에서 265℃까지 높아짐에 따라 패키지 크랙 및 웨이퍼와 에폭시수지 조성물간의 계면 박리 현상이 발생할 가능성이 높아져 기존 에폭시 수지 조성물로는 신뢰성 있는 제품을 기대하기 힘들다는 문제점이 발생하였다.Since the epoxy resin composition is adopted as a sealing material for semiconductor sealing, workability and productivity when mounting a semiconductor package on a printer substrate have been remarkably improved with recent advances in surface mounting technology. In addition, since the shortening and thinning of the electronic and electronic parts is accelerated, the demand for low stress, moisture resistance, and high adhesion of the epoxy resin composition is increasing day by day. In addition, due to environmental problems, a solderless process is being developed in a solder process, which is a post-process SOLDER. As a result, the solder process temperature increases from 230 ° C to 265 ° C, resulting in package cracks and wafer and epoxy resin compositions. Since the interfacial peeling phenomenon of the liver is more likely to occur, it is difficult to expect a reliable product with the existing epoxy resin composition.

이와 같이 대형 반도체 소자를 소형·박형 패케이지에 밀봉한 수지 밀봉형 반도체는 납 프리(Pb Free)공정에서 외부환경의 온도 및 습도변화에 따른 열응력에 기인하여 패케이지 크랙 또는 알루미늄 패드 부식 발생 등으로 고장 발생의 빈도가 높아지게 된다. 이에 따라서 내크랙성을 향상시키기 위하여 흡습률 저하, 접착강도 및 고온강도 향상이 요구되고 있다. 저응력화를 위해서는 충전제 함량의 조절, 열팽창계수를 낮추는 방법, 개질제를 첨가함으로서 저탄성화를 이루는 방법 등이 알려져있다.As described above, a resin-sealed semiconductor in which a large semiconductor device is sealed in a small and thin package has a package crack or an aluminum pad corrosion due to thermal stress caused by changes in temperature and humidity of an external environment in a lead-free process. This increases the frequency of failures. Accordingly, in order to improve crack resistance, there is a demand for lowering the moisture absorption rate, improving the adhesive strength and the high temperature strength. In order to reduce the stress, it is known to control the filler content, to lower the coefficient of thermal expansion, and to achieve low elasticity by adding a modifier.

저응력화에 따른 고충진화 기술은 이미 많이 알려져 있으며, 이 방법에 따르면 패키지 열응력이 억제된다. 또한 저 탄성화하는 방법으로서는 각종고무 성분에 의한 개질(일본 특허공개 소63-1894 및 평5-291436)이 검토되어 열적 안정성이 우수한 실리콘 중합체를 배합, 개질시킨 에폭시 수지 성형재료가 폭 넓게 채택되고 있다. 이 방법에서 혼합된 실리콘 오일은 성형재료의 기저 수지인 에폭시 수지 및 경화제와 상용성이 없기 때문에 기저 수지중에 미립자 분산형태로(해도구조) 되므로 내열성을 유지한 채, 저탄성률을 이룰 수 있었다. 그러나 이러한 기술은 납 프리(Pb Free) 공정에서 솔더(Solder)온도를 265℃까지 상승시키면, 에폭시 봉지재 및 리드온 칩과 에폭시 봉지재와의 접착력 저하 및 수증기압의 증대로 패키지 크랙이 발생하여 신뢰성이 높은 반도체 소자를 얻기가 어려웠다.High filling technology due to low stress is already known, according to this method, the package thermal stress is suppressed. As a method of low elasticity, modification by various rubber components (Japanese Patent Laid-Open No. 63-1894 and Hei 5-291436) has been studied, and an epoxy resin molding material blended and modified with a silicone polymer having excellent thermal stability is widely adopted. have. Since the silicone oil mixed in this method is incompatible with the epoxy resin and the curing agent, which are the base resins of the molding material, the silicone oil is in the form of fine particle dispersion (isolated structure) in the base resin, thereby achieving low elastic modulus while maintaining heat resistance. However, if the solder temperature is raised to 265 ° C in the lead-free process, the package crack is generated due to the decrease in adhesion between the epoxy encapsulant and the lead-on chip and the epoxy encapsulant and the increase in water vapor pressure. It was difficult to obtain this high semiconductor element.

본 발명은 상기와 같은 종래기술의 문제점을 해결하기 위한 것으로, 디글리시딜 이써 비스페놀 변성 에폭시 수지 및 2종 이상의 커플링제를 혼합사용하고, 무기충전제를 고충진함에 의해 열충격, 내크랙성 및 접착성이 개선된 에폭시 수지 조성물을 제공하는 것을 목적으로 한다.The present invention is to solve the problems of the prior art as described above, by using a mixture of diglycidyl ether bisphenol-modified epoxy resin and two or more types of coupling agent, and high filling inorganic fillers, thermal shock, crack resistance and adhesion It is an object to provide an epoxy resin composition having improved properties.

즉, 본 발명은 하기 화학식 1로 표시되는 올소 크레졸 노볼락 에폭시 수지, 하기 화학식 2로 표시되는 디글리시딜 이써 비스페놀 변성 에폭시 수지, 페놀 노볼락 수지, 하기 화학식 4로 표시되는 커플링제를 글리콜류 또는 증류수로 전처리한 커플링제, 하기 화학식 4로 표시되는 커플링제, 경화촉진제, 무기충진제, 브롬화 에폭시 수지, 삼산화 안티몬 및 기타 첨가제를 포함하는 반도체 소자 밀봉용 에폭시 수지 조성물에 대한 것이다.That is, the present invention is an olso cresol novolac epoxy resin represented by the following general formula (1), a diglycidyl ether bisphenol-modified epoxy resin represented by the following general formula (2), a phenol novolak resin, a coupling agent represented by the following general formula (4) glycols Or a coupling agent pretreated with distilled water, a coupling agent represented by the following formula (4), a curing accelerator, an inorganic filler, a brominated epoxy resin, antimony trioxide, and other additives.

[화학식 1][Formula 1]

상기 식에서 R은 히드록시기 또는 메틸기이고, G는 글리시딜기이며, n은 0 내지 3의 정수이다.In the above formula, R is a hydroxy group or methyl group, G is a glycidyl group, n is an integer of 0 to 3.

[화학식 3][Formula 3]

상기 식에서 R은 수소원자 또는 메틸기이고, G는 글리시딜기이며, n은 0 내지 3의 정수이다.In the formula, R is a hydrogen atom or a methyl group, G is a glycidyl group, n is an integer of 0 to 3.

[화학식 4][Formula 4]

상기 식에서 R은 사이클로에폭시기, 아미노기, 메타크릴기, 머캅토기, 또는 비닐기이며, X는 메톡시기 또는 에톡시기이고, 상기 복수의 X는 서로 다를 수 있다.Wherein R is a cycloepoxy group, an amino group, a methacryl group, a mercapto group, or a vinyl group, X is a methoxy group or an ethoxy group, and the plurality of X's may be different from each other.

이하에서 본 발명을 보다 상세하게 설명한다.The present invention will be described in more detail below.

본 발명에서 기본 수지로 올소 크레졸 노블락 수지와 디글리시딜 이써 비스페놀 변성 에폭시 수지를 혼합하여 사용하고, 여기에 페놀 노볼락계 경화제를 도입하는 것을 기본 구조로 한다.In the present invention, an oxo cresol noblock resin and a diglycidyl ether bisphenol-modified epoxy resin are mixed and used as the base resin, and a phenol novolac-based curing agent is introduced therein.

본 발명에서 올소 크레졸 노블락 수로지는 하기 화학식 1로 표시되는 구조의 것을 전체 수지 조성물에 대하여 3∼12 중량%의 범위로 사용한다.In the present invention, the osol cresol noblock resin is used in the range of 3 to 12% by weight based on the total resin composition of the structure represented by the formula (1).

상기 식에서 R은 히드록시기 또는 메틸기이고, G는 글리시딜기이며, n은 0 내지 3의 정수이다.In the above formula, R is a hydroxy group or methyl group, G is a glycidyl group, n is an integer of 0 to 3.

본원 발명의 디글리시딜 이써 비스페놀 변성 에폭시 수지는 하기 화학식 2로 표시된다.The diglycidyl ether bisphenol-modified epoxy resin of the present invention is represented by the following formula (2).

상기 식에서 R은 수소원자 또는 메틸기이고, G는 글리시딜기이며, n은 0 내지 3의 정수이다.In the formula, R is a hydrogen atom or a methyl group, G is a glycidyl group, n is an integer of 0 to 3.

전체 조성물 중 상기 디글리시딜 이써 비스페놀 변성 에폭시 수지의 함량은 1∼8중량%의 범위이다. 디글리시딜 이써 비스페놀 변성 에폭시 수지의 함량이 1 중량% 미만인 경우에는 충분한 접착 특성 및 신뢰성개선의 효과를 얻을 수 없으며, 8중량%를 초과하는 경우 유동특성 및 제조 과정에서의 문제로 인하여 생산성을 기대할 수 없다.The content of the diglycidyl ether bisphenol-modified epoxy resin in the total composition is in the range of 1 to 8% by weight. If the content of diglycidyl ether bisphenol-modified epoxy resin is less than 1% by weight, sufficient adhesive properties and improved reliability cannot be obtained. If the content of diglycidyl ether bisphenol modified epoxy resin is less than 1% by weight, productivity is increased due to flow characteristics and manufacturing process problems. Can't expect

상기 디글리시딜 이써 비스페놀 변성 에폭시수지는 하기 화학식 3의 디글리시딜 이써 비스페놀 에폭시 모노머에 에피클로로 히드린을 혼합하여 저온에서 개환 반응을 진행시켜 제조할 수 있다.The diglycidyl ether bisphenol-modified epoxy resin may be prepared by mixing epichlorohydrin with a diglycidyl ether bisphenol epoxy monomer of Formula 3 below to proceed with a ring-opening reaction at low temperature.

상기 식에서 R은 수소원자 또는 메틸기이고, G는 글리시딜기이며, n은 0 내지 3의 정수이다.In the formula, R is a hydrogen atom or a methyl group, G is a glycidyl group, n is an integer of 0 to 3.

이렇게 얻어진 수지는 에폭시 당량이 220∼360인 고순도의 에폭시수지이다. 이러한 디글리시딜 이써 비스페놀 변성 에폭시수지는 선형구조로 우수한 탄성률을 나타내면서, 경화 구조상으로 높은 내열성을 지니게 되며, 이로 인해 저수축률 및 크랙 방지역활을 한다.The resin thus obtained is a high purity epoxy resin having an epoxy equivalent of 220 to 360. The diglycidyl ether bisphenol-modified epoxy resin exhibits excellent elastic modulus in a linear structure, and has high heat resistance on the cured structure, thereby acting as a low shrinkage rate and preventing cracks.

본 발명에서 경화제로는 통상적으로 사용되는 페놀 노볼락 수지로 섭씨 80∼100℃의 연화점과 100∼120의 히드록시 당량을 가진 수지로 1.0∼8.0 중량%의 범위로 사용한다.In the present invention, the curing agent is a phenol novolak resin, which is commonly used, and a resin having a softening point of 80 to 100 ° C and a hydroxy equivalent of 100 to 120, and used in the range of 1.0 to 8.0% by weight.

본원 발명에서 에폭시 수지와 경화제의 당량비는 수산기 당량에 대한 에폭시 당량이 0.9∼1.1사이가 되도록 하는 것이 바람직하다.In the present invention, the equivalent ratio of the epoxy resin and the curing agent is preferably such that the epoxy equivalent to the hydroxyl equivalent is between 0.9 and 1.1.

본 발명에서는 에폭시 수지 조성물의 성형성 및 접착력 강화를 위해 2종 이상의 커플링제를 혼합하여 사용한다. 구체적으로는 하기 화학식 4로 표시되는 커플링제를 폴리에틸렌글리콜, 폴리프로필렌글리콜 등과 같은 글리콜류 또는 증류수로 전처리한 것을 전체 수지 조성물에 대하여 0.1∼2.0중량%의 범위로 사용하고, 다른 1종의 커플링제는 아민, 머캅토등으로 이루어진 말단의 구조가 반응성기를 지닌 것을 전처리를 거치지 않고, 0.01∼0.1 중량%의 범위에서 사용한다.In the present invention, two or more coupling agents are mixed and used to enhance moldability and adhesion of the epoxy resin composition. Specifically, the pretreatment of the coupling agent represented by the following formula (4) with glycols such as polyethylene glycol, polypropylene glycol, or distilled water or distilled water is used in the range of 0.1 to 2.0% by weight based on the total resin composition, and another coupling agent is used. Is used in the range of 0.01 to 0.1% by weight without undergoing pretreatment of the terminal structure consisting of amine, mercapto and the like having a reactive group.

상기 식에서 R은 사이클로에폭시기, 아미노기, 메타크릴기, 머캅토기, 또는 비닐기이며, X는 메톡시기 또는 에톡시기이고, 상기 복수의 X는 서로 다를 수 있다.Wherein R is a cycloepoxy group, an amino group, a methacryl group, a mercapto group, or a vinyl group, X is a methoxy group or an ethoxy group, and the plurality of X's may be different from each other.

상기와 같은 2종이상의 커플링제를 전처리를 병행하여 사용함으로써, 높은 접착력을 갖는 장점이 있어, 납 프리(Pb Free)공정의 높은 솔더 온도하에서도 리드프레임 및 리드온 칩과 에폭시 봉지재 사이의 접착특성 및 패키지 크랙을 개선함과 동시에 반도체 조립공정에서 평가되는 신뢰성(thermal shock test, press cooker test)장기 평가 시험에서 특성이 우수한 결과를 얻을 수 있다.By using two or more types of coupling agents as described above in combination with pretreatment, there is an advantage of having a high adhesive strength, and adhesion between the lead frame and the lead-on chip and the epoxy encapsulant even under the high solder temperature of the lead-free process In addition to improving the characteristics and package cracks, excellent results can be obtained in the long-term evaluation test (thermal shock test, press cooker test) evaluated in the semiconductor assembly process.

본 발명에서 경화촉진제로는 경화속도를 조절하기 위해 이소시아네이트형 잠재성 경화촉매를 사용하는 것이 바람직하며, 그 구체적인 예로서 트리아진 이소시아네이트 이미다졸화합물 또는 트리페닐포스핀 어덕트로서 테트라페닐포스포니움 테트라페닐보레이트, 트리페닐포스핀 테트라페닐보레이트, 테트라페닐보론염 등을 들 수 있다. 상기 경화촉진제의 함량은 전체 에폭시 수지 조성물에 대하여0.02∼0.40중량%의 범위로 사용한다.In the present invention, it is preferable to use an isocyanate type latent curing catalyst to control the curing rate, and specific examples thereof include tetraphenylphosphonium tetra as a triazine isocyanate imidazole compound or triphenylphosphine adduct. Phenyl borate, a triphenyl phosphine tetraphenyl borate, tetraphenyl boron salt, etc. are mentioned. The content of the curing accelerator is used in the range of 0.02 to 0.40% by weight based on the total epoxy resin composition.

상기 경화촉진제와 더불어 보조촉매를 병용하는 경우 더욱 우수한 경화특성을 얻을 수 있으며, 그 구체적인 예로서 아민 계통의 벤질디메틸아민, 트리에탄올아민, 트리에틸렌디아민, 디메틸아미노에탄올, 트리(디메틸아미노메틸)페놀과 포스핀계의 트리페닐포스핀, 디페닐포스핀, 페닐포스핀 등을 들 수 있다. 보조촉매를 사용하는 경우 그 함량은 0.02∼0.25중량%의 범위이다.When the co-catalyst is used together with the curing accelerator, more excellent curing characteristics can be obtained. Specific examples thereof include benzyldimethylamine, triethanolamine, triethylenediamine, dimethylaminoethanol, tri (dimethylaminomethyl) phenol Phosphine-based triphenylphosphine, diphenylphosphine, phenylphosphine and the like. In the case of using a cocatalyst, the content is in the range of 0.02 to 0.25 wt%.

본 발명에서 무기충전제로는 그 평균입자크기가 0.1∼35.0㎛인 용융 또는 합성실리카를 조성물 전체에 대해 70∼90중량% 범위가 되도록 사용한다. 무기충전제의 양이 70 중량% 미만인 경우에는 충분한 강도와 저열팽창화를 실현할 수 없으며 또한 수분의 침투가 용이해져 신뢰성 특성에 치명적이 된다. 또한 무기충전제의 양이 90 중량%를 초과하면 유동특성의 저하로 인해 성형성이 나빠질 우려가 있다.In the present invention, as the inorganic filler, molten or synthetic silica having an average particle size of 0.1 to 35.0 µm is used so as to be in the range of 70 to 90% by weight based on the whole composition. When the amount of the inorganic filler is less than 70% by weight, sufficient strength and low thermal expansion cannot be realized, and moisture permeation becomes easy, and it becomes fatal to reliability characteristics. In addition, when the amount of the inorganic filler exceeds 90% by weight there is a fear that the moldability due to the deterioration of the flow characteristics.

본 발명에서는 충진재를 고충진화 함으로써 흡습율 및 열팽창계수를 저감시키고 기계적 강도를 향상시켜 반도체 성형특성과 신뢰성이 우수한 반도체 소자 밀봉용 에폭시 수지 조성물을 제공할 수 있다.The present invention can provide an epoxy resin composition for sealing semiconductor elements excellent in semiconductor molding properties and reliability by reducing the moisture absorption rate and the coefficient of thermal expansion and improving the mechanical strength by high filling the filler.

본 발명에 있어서 에폭시 조성물에 난연성을 부여하기 위하여 에폭시 당량 250∼300, 브롬 함량 35∼40%인 폴리 글리시딜에테르 브롬화 페놀 에폭시와 삼산화 안티몬을 혼합하여 사용한다. 브롬화 에폭시와 삼산화 안티몬은 고온 고압 다습한 환경하에서 불순물이온에 의한 칩 부식을 발생시켜 신뢰성 저하를 가속화시키는 문제가 있다. 따라서 본 발명에 있어서 난연 UL94 V-O의 규격을 만족하는 범위에서 신뢰성을 향상시키기 위하여 상기 두성분의 함량이 전체조성물에 대하여 각각 0.2∼1.2중량%가 되도록 하였다.In the present invention, in order to impart flame retardance to the epoxy composition, a poly glycidyl ether brominated phenol epoxy having an epoxy equivalent of 250 to 300 and a bromine content of 35 to 40% is mixed with antimony trioxide. Epoxy bromide and antimony trioxide have a problem of accelerating the deterioration of reliability by generating chip corrosion by impurity ions under high temperature, high pressure and high humidity. Therefore, in the present invention, in order to improve the reliability in the range of satisfying the specification of flame retardant UL94 V-O, the content of the two components is 0.2 to 1.2% by weight based on the total composition, respectively.

본 발명의 수지 조성물에는 본 발명의 목적을 해하지 않는 범위내에서 고급 지방산, 천연지방산, 파라핀계 왁스, 에스테르계 왁스 등의 이형제, 카본블랙, 유·무기염료 등의 착색제, 가교증진제, 난연보조제, 레벨링제 등을 필요에 따라서 사용할 수 있다.In the resin composition of the present invention, release agents such as higher fatty acids, natural fatty acids, paraffin waxes, ester waxes, colorants such as carbon black, organic and inorganic dyes, crosslinking enhancers, flame retardant aids, and the like without departing from the object of the present invention, A leveling agent etc. can be used as needed.

본 발명의 에폭시 수지 조성물은 소정의 배합량을 헨셀믹서나 뢰디게 믹서를 이용하여 균일하게 분쇄하여 혼합한 뒤 1차 분말 제조물을 얻은 후 롤밀이나 니이더를 이용 100℃에서 약 10분 이내로 용융혼련한 뒤 냉각, 분쇄과정을 거쳐 제조될 수 있다.The epoxy resin composition of the present invention is uniformly pulverized by mixing a predetermined amount using a Henschel mixer or a Lodige mixer, and then obtained a primary powder product, followed by melt kneading at about 100 minutes using a roll mill or a kneader at about 100 ° C. After cooling and grinding can be prepared.

이하에서 실시예를 통하여 본 발명을 보다 상세하게 설명하고자 하나 하기의 실시예는 설명의 목적을 위한 것으로 본 발명을 제한하고자 하는 것은 아니다.Hereinafter, one embodiment of the present invention will be described in more detail with reference to the following examples, which are intended for purposes of explanation and are not intended to limit the present invention.

제조예Production Example

둥근 사구 플라스크 반응관에 디글리시딜 이써 비스페놀에이(분자량 228) 1.0몰과 에피클로하이드린 2.0몰을 넣은후 반응온도 130∼220℃에서 2-메틸이미다졸 수용액 0.02몰을 플라스크내에 서서히 적하 시키면서 질소분위기 하에서 6시간 반응시킨 후 10℃ 이하로 냉각하여 50% 수산화나트륨 용액을 투입하였다. 이때 온도는 10℃ 미만으로 유지하여 4시간정도 반응시켰다. 이렇게 하여 얻어진 제조물에 메탄올과 물 혼합 수용액을 넣은 후 강력교반을 통해 정제하고, 건조공정을 통하여 당량 300의 디글리시딜 이써 비스페놀 변성 에폭시수지를 제조하였다.1.0 mole of diglycidyl ether bisphenol A (molecular weight 228) and 2.0 mole epiclohydrin were added to a round-necked flask reaction tube, and then 0.02 mole of 2-methylimidazole aqueous solution was slowly added to the flask at a reaction temperature of 130 to 220 ° C. After reacting for 6 hours under nitrogen atmosphere while cooling to 10 ° C. or less, 50% sodium hydroxide solution was added thereto. At this time, the temperature was kept below 10 ℃ and reacted for about 4 hours. The mixture thus obtained was added with a mixture of methanol and water, and purified through strong stirring. A diglycidyl ether bisphenol-modified epoxy resin having an equivalent weight of 300 was prepared through a drying process.

실시예Example

상기에서 제조된 디글리시딜 이써 비스페놀에이 변성수지를 사용하여 표 1 및 표 2에 표시된 대로 배합하고 헨셀믹서를 이용하여 균일하게 분쇄, 혼합하여 1차 분말 제조물을 얻은 다음, 롤밀을 이용하여 100℃에서 약 10분이내로 용융혼련한 뒤 냉각, 분쇄과정을 거쳐 에폭시 봉지 조성물을 제조하였다.Using the diglycidyl ether bisphenol A modified resin prepared above as shown in Table 1 and Table 2 and uniformly pulverized and mixed using a Henschel mixer to obtain a primary powder product, using a roll mill 100 After melt-kneading at about 10 minutes within ℃, through the cooling, grinding process to prepare an epoxy encapsulation composition.

이렇게 하여 얻어진 에폭시 수지 조성물에 대하여 물성 및 신뢰성을 평가하여 이를 표 3 및 표 4에 나타내었다.The physical properties and the reliability of the epoxy resin composition thus obtained were evaluated and shown in Tables 3 and 4.

1) 일본화약: EOCN-1020-651) Japanese Gunpowder: EOCN-1020-65

2) 제조예2) Production Example

3) 일본화약: Bren-S3) Japanese Gunpowder: Bren-S

4) 2,4-디아미노-6-(2-2-메틸-1-이미다졸)에틸-1,3,5-트리아진4) 2,4-diamino-6- (2-2-methyl-1-imidazole) ethyl-1,3,5-triazine

5) A-187과 폴리 프로필렌 글리콜 전처리화 제품5) A-187 and Polypropylene Glycol Pretreatment Products

6) γ-머캅토 프로필렌 트리메톡시실란6) γ-mercapto propylene trimethoxysilane

7) Meiwa HF-1,3 페놀 노블락형 수지7) Meiwa HF-1,3 Phenolic Noble Type Resin

[물성평가 방법][Property evaluation method]

㉠ 스파이럴 플로우(Spiral Flow)럴 Spiral Flow

EMMI규격을 기준으로 금형을 제작하여 성형온도(175℃), 성형압력 70Kgf/cm2에서 유동 길이를 평가.Mold was manufactured based on EMMI standard to evaluate flow length at molding temperature (175 ℃) and molding pressure of 70Kgf / cm 2 .

㉡ 유리전이온도(Tg)㉡ glass transition temperature (Tg)

TMA(Thermal mechanical Analyser)로 평가 (승온속도 10℃/min)Evaluated by TMA (Thermal mechanical Analyser) (Raising temperature 10 ℃ / min)

㉢ 부착력㉢ adhesion

리드프레임(Cu Lead Frame)과 에폭시 봉지재와의 인장력을 UTM 이용을 이용하여 측정Tensile force between Cu Lead Frame and epoxy encapsulant is measured using UTM

㉣ 난연성㉣ flame retardant

UL 94 수직시험으로 1/16inch를 기준으로 함, 시편에 불꽃을 10초간 점촉시킨후 불꽃이 꺼지면 다시 10초간 불꽃을 점초시키는 시험 5회UL 94 vertical test, based on 1/16 inch, 5 tests of sparking flame for 10 seconds after sparking off

각시편 1,2차 연소시간1st and 2nd combustion time 각시편 2차연소시간과Glowing시간의 합Sum of secondary combustion time and glow time for each specimen 5개시편 1차,2차연소시간의 총합 시간Total time of primary and secondary combustion time of 5 specimens V-OV-O 10초 이내Within 10 seconds 30초 이내Within 30 seconds 50초 이내Within 50 seconds V-1V-1 30초 이내Within 30 seconds 60초 이내Within 60 seconds 250초 이내Within 250 seconds V-2V-2 30초 이내Within 30 seconds 60초 이내Within 60 seconds 250초 이내Within 250 seconds

[물성평가방법][Property evaluation method]

㉠ 크랙성 평가㉠ Crack evaluation

MPS(Multi Plunger System)성형기를 이용하여 175℃에서 90초간 성형시킨 후, 175℃ 4시간 후경화시킨 다음 IR REFLOW 온도를 265℃로 하여 3회 진행후 초음파(C-SAM)설비를 이용하여 크랙이 발생한 수를 C-SAM으로 평가After molding for 90 seconds at 175 ℃ using MPS (Multi Plunger System) molding machine, after curing for 4 hours at 175 ℃ and then proceeding three times with IR REFLOW temperature as 265 ℃, it was cracked using ultrasonic (C-SAM) facility. The number of occurrences as C-SAM

㉡ 박리성 평가㉡ Peelability evaluation

냉열충격시험기(Thermal Shock Tester)에서 165℃ 에서 -50℃까지 각각 100, 200, 250 사이클로 가혹시험하여 리드프레임 및 리드온 칩과 에폭시봉지재 사이에 박리가 10%이상 발생한 수를 C-SAM으로 평가In the Thermal Shock Tester, C-SAM was used to perform a thorough test at 100, 200, and 250 cycles from 165 ° C to -50 ° C, respectively, in which 10% or more peeling occurred between the leadframe, the lead-on chip and the epoxy encapsulant. evaluation

㉢ 성형성 평가㉢ Moldability evaluation

성형성 평가 항목은 외관 불량에 해당하는 보이드(Void)로 크게 게이트(Gate)와 에어 벤드(Air-vent) 및 외관에 나타나는 외관 불량을 관찰하는 것으로, 육안 관찰 시 10mil 이하로 관리하여 불량 유무를 평가 하였다.The moldability evaluation items are voids corresponding to appearance defects. Observation of appearance defects in gates, air bends, and appearances is greatly observed. Evaluated.

표 3 및 표 4에 나타난 바와 같이 리드 온 칩 및 리드프레임과 에폭시 봉지재와의 접착특성이 월등히 향상되었음을 알 수 있으며, 신뢰성 측면에서 우수한 특성을 나타낸다.As shown in Table 3 and Table 4 it can be seen that the adhesion properties of the lead-on chip, the lead frame and the epoxy encapsulation material is significantly improved, and shows excellent characteristics in terms of reliability.

본 발명에 의해 에폭시 수지 조성물의 열충격, 내크랙성 및 접착성이 개선하여 납프리(Pb Free) 공정 후에도 신뢰성이 우수한 반도체소자 성형용 에폭시 수지 조성물을 제공할 수 있다.According to the present invention, it is possible to provide an epoxy resin composition for forming a semiconductor device having excellent reliability even after a lead-free process by improving thermal shock, crack resistance, and adhesion of the epoxy resin composition.

Claims (4)

하기 화학식 1로 표시되는 올소 크레졸 노볼락 에폭시 수지, 하기 화학식 2로 표시되는 디글리시딜 이써 비스페놀 변성 에폭시 수지, 페놀 노볼락 수지, 하기 화학식 4로 표시되는 커플링제를 글리콜류 또는 증류수로 전처리한 커플링제, 하기 화학식 4로 표시되는 커플링제, 경화촉진제, 무기충진제, 브롬화 에폭시 수지, 삼산화 안티몬 및 기타 첨가제를 포함하는 반도체 소자 밀봉용 에폭시 수지 조성물.An olso cresol novolac epoxy resin represented by the following formula (1), a diglycidyl ether bisphenol-modified epoxy resin represented by the following formula (2), a phenol novolak resin, and a coupling agent represented by the following formula (4) are pretreated with glycols or distilled water. Epoxy resin composition for sealing a semiconductor device comprising a coupling agent, a coupling agent represented by the following formula (4), a curing accelerator, an inorganic filler, a brominated epoxy resin, antimony trioxide and other additives. [화학식 1][Formula 1] 상기 식에서 R은 히드록시기 또는 메틸기이고, G는 글리시딜기이며, n은 0 내지 3의 정수이다.In the above formula, R is a hydroxy group or methyl group, G is a glycidyl group, n is an integer of 0 to 3. [화학식 3][Formula 3] 상기 식에서 R은 수소원자 또는 메틸기이고, G는 글리시딜기이며, n은 0 내지 3의 정수이다.In the formula, R is a hydrogen atom or a methyl group, G is a glycidyl group, n is an integer of 0 to 3. [화학식 4][Formula 4] 상기 식에서 R은 사이클로에폭시기, 아미노기, 메타크릴기, 머캅토기, 또는 비닐기이며, X는 메톡시기 또는 에톡시기이고, 상기 복수의 X는 서로 다를 수 있다.Wherein R is a cycloepoxy group, an amino group, a methacryl group, a mercapto group, or a vinyl group, X is a methoxy group or an ethoxy group, and the plurality of X's may be different from each other. 제 1항에 있어서, 상기 조성물 중 올소 크레졸 노볼락 에폭시 수지의 함량이 3∼12중량%이고, 디글리시딜 이써 비스페놀 변성 에폭시 수지의 함량이 1∼8중량%이며, 페놀 노볼락 수지의 함량이 1.0∼8.0중량%이고, 전처리된 커플링제의 함량이 0.1∼2.0중량%이며, 전처리되지 않은 커플링제의 함량이 0.01∼0.1중량%이고, 경화촉진제의 함량이 0.02∼0.4중량%이며, 무기충진제의 함량이 70∼90중량%이고, 브롬화 에폭시 수지 0.2∼1.2 중량%이며, 삼산화 안티몬 0.2∼1.2중량%이고, 기타 첨가제의 함량이 0.3∼0.8중량%인 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물.According to claim 1, wherein the content of the oligocresol novolac epoxy resin in the composition is 3 to 12% by weight, the content of diglycidyl ether bisphenol-modified epoxy resin is 1 to 8% by weight, the content of phenol novolac resin 1.0 to 8.0% by weight, 0.1 to 2.0% by weight of the pretreated coupling agent, 0.01 to 0.1% by weight of the untreated coupling agent, 0.02 to 0.4% by weight of the curing accelerator, and inorganic Epoxy for semiconductor device sealing, characterized in that the content of the filler is 70 to 90% by weight, 0.2 to 1.2% by weight epoxy bromide resin, 0.2 to 1.2% by weight antimony trioxide, and 0.3 to 0.8% by weight of other additives Resin composition. 제 1항에 있어서, 상기 경화촉진제로서 이소시아네이트형 잠재성 경화촉매를 사용하고, 이와 더불어 아민형 또는 포스핀형 보조촉매를 0.02∼0.25중량% 범위에서 추가로 사용하는 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물.2. The epoxy for semiconductor element sealing according to claim 1, wherein an isocyanate type latent curing catalyst is used as the curing accelerator, and an amine or phosphine type cocatalyst is further used in a range of 0.02 to 0.25 wt%. Resin composition. 제 1항에 있어서, 상기 브롬화 에폭시 수지의 에폭시 당량 250∼300이고, 브롬 함량 35∼40%인 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물.The epoxy resin composition for sealing a semiconductor device according to claim 1, wherein the epoxy equivalent of the brominated epoxy resin is 250 to 300 and has a bromine content of 35 to 40%.
KR10-2002-0085933A 2002-12-28 2002-12-28 Epoxy Resin Composition for Encapsulating Semiconductor Device KR100527826B1 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100696878B1 (en) * 2005-12-30 2007-03-20 제일모직주식회사 Epoxy Resin Composition for Packaging Semiconductor Device
CN115386205A (en) * 2022-09-21 2022-11-25 容鑫新材料(江苏)有限公司 Degradable antibacterial garden film and preparation method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100696878B1 (en) * 2005-12-30 2007-03-20 제일모직주식회사 Epoxy Resin Composition for Packaging Semiconductor Device
CN115386205A (en) * 2022-09-21 2022-11-25 容鑫新材料(江苏)有限公司 Degradable antibacterial garden film and preparation method thereof
CN115386205B (en) * 2022-09-21 2023-12-08 容鑫新材料(江苏)有限公司 Degradable antibacterial garden film and preparation method thereof

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