KR20040017749A - Method for developing the photoresist - Google Patents

Method for developing the photoresist Download PDF

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Publication number
KR20040017749A
KR20040017749A KR1020020050187A KR20020050187A KR20040017749A KR 20040017749 A KR20040017749 A KR 20040017749A KR 1020020050187 A KR1020020050187 A KR 1020020050187A KR 20020050187 A KR20020050187 A KR 20020050187A KR 20040017749 A KR20040017749 A KR 20040017749A
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South Korea
Prior art keywords
wafer
developer
photosensitive film
film
developing
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KR1020020050187A
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Korean (ko)
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하현주
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주식회사 하이닉스반도체
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Priority to KR1020020050187A priority Critical patent/KR20040017749A/en
Publication of KR20040017749A publication Critical patent/KR20040017749A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3042—Imagewise removal using liquid means from printing plates transported horizontally through the processing stations
    • G03F7/3057—Imagewise removal using liquid means from printing plates transported horizontally through the processing stations characterised by the processing units other than the developing unit, e.g. washing units
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

PURPOSE: A method for developing a photoresist layer is provided to be capable of improving the uniformity of critical dimension of a wafer and enhancing pattern uniformity. CONSTITUTION: A photoresist layer is formed at the upper portion of a wafer. An exposure process is carried out on the photoresist layer. A developing solution layer is formed on the entire surface of the photoresist layer by jetting a developing solution onto the photoresist layer using a nozzle. A puddling process is carried out on the resultant structure. A cleaning process is carried out on the resultant structure after predetermined time. Preferably, a vibrating process is alternately carried out with the puddling process on the resultant structure before the cleaning process.

Description

감광막 현상방법{Method for developing the photoresist}Method for developing the photoresist

본 발명은 감광막 현상방법에 관한 것으로, 보다 상세하게는 감광막 표면에 균일한 농도의 현상액을 형성하여 웨이퍼의 임계치(critical dimension)의 균일도 및 패턴 형성의 균일도를 향상시키는 반도체장치의 감광막 현상방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photosensitive film developing method, and more particularly, to a photosensitive film developing method of a semiconductor device for forming a developer having a uniform concentration on a surface of the photosensitive film to improve uniformity of critical dimensions and pattern formation of a wafer. will be.

최근의 반도체 소자의 고집적화 추세는 반도체장치에서 형성되어야 하는 패턴들의 크기가 감소함에 따라 이들의 임계치(critical dimension)의 관리가 매우 중요하다. 이에 따라 반도체 소자의 제조 공정 중에서 식각 또는 이온주입 공정 등의 마스크로 매우 폭 넓게 사용되는 감광막 패턴의 균일화 및 미세화가 필수 요건이다.In recent years, the trend of high integration of semiconductor devices is very important to manage their critical dimensions as the size of patterns to be formed in semiconductor devices decreases. Accordingly, uniformity and miniaturization of the photoresist pattern, which is widely used as a mask such as an etching or ion implantation process, is essential in the manufacturing process of a semiconductor device.

종래 기술의 감광막 도포 후 마스크를 이용한 노광 공정을 실시한 감광막의 패턴 현상을 위한 공정은 다음과 같다.The process for pattern development of the photosensitive film which performed the exposure process using a mask after apply | coating the photosensitive film of a prior art is as follows.

먼저, 웨이퍼에 감광액을 도포한 다음 소정의 온도로 베이킹(baking)하여 감광막을 형성한다.First, a photoresist is applied to a wafer and then baked at a predetermined temperature to form a photoresist film.

그리고, 마스크를 사용하여 감광막을 설계된 패턴에 따라 선택적으로 노광시킨다.Then, the photosensitive film is selectively exposed to the designed pattern using a mask.

그 다음, 노광된 감광막의 전면에 현상액을 분사하여 노광된 부위의 감광막을 현상액의 알칼리 성분으로 용해시켜 패턴을 형성한다.Then, a developer is sprayed on the entire surface of the exposed photosensitive film to dissolve the photosensitive film of the exposed portion with an alkali component of the developing solution to form a pattern.

이후, 세정공정을 실시하여 웨이퍼의 표면을 세척하면 현상공정이 완료된다.Thereafter, when the surface of the wafer is washed by performing a cleaning process, the developing process is completed.

상기 종래의 현상공정을 구체화하여 설명하면, 상기 노광과 후노광 베이킹을 거친 웨이퍼는 현상장치의 받침대에 안착된다. 이때, 받침대는 회전축에 의하여 모터와 연결되어 회전운동을 하게 된다.In the concrete description of the above conventional developing process, the wafer subjected to the exposure and the post-exposure baking is seated on a pedestal of the developing apparatus. At this time, the pedestal is connected to the motor by the rotating shaft to perform a rotational movement.

그리고, 받침대가 회전하는 상태에서 하나 또는 두 개의 노즐로부터 현상액이 분사되며, 이러한 분사동작은 웨이퍼의 전면이 현상액으로 뒤덮을 때까지 진행된다. 이때, 현상액을 분사하는 노즐이 웨이퍼의 가장자리로부터 분사하기 시작해서 웨이퍼의 중심방향으로, 다시 웨이퍼의 중심방향에서 웨이퍼의 가장자리로 계속하여 현상액을 분사하며 이동한다.Then, the developer is ejected from one or two nozzles while the pedestal rotates, and this ejection operation proceeds until the entire surface of the wafer is covered with the developer. At this time, the nozzle for injecting the developer starts to spray from the edge of the wafer and then moves in the direction of the center of the wafer and then continuously injecting the developer to the edge of the wafer.

이어, 분사동작이 완료되면 현상액이 감광막의 노광부위를 완전히 용해시키도록 웨이퍼를 정지상태 즉, 퍼들(puddle)상태로 소정 시간동안 놓아둔다.Subsequently, when the spraying operation is completed, the wafer is placed in a stationary state, that is, a puddle state for a predetermined time so that the developer completely dissolves the exposed portion of the photosensitive film.

그러나, 상술한 종래의 감광막 현상방법에 감광막을 현상하게 되면, 웨이퍼의 중심부분에 현상액이 과도하게 분사됨으로써, 현상액이 감광막과 반응하여 감광막의 노광부위를 완전히 용해시키도록 웨이퍼를 정지상태로 소정 시간동안 놓아두게 되어 현상액의 반응 속도가 떨어지는 문제점이 있었다.However, when the photosensitive film is developed in the conventional photosensitive film developing method described above, the developer is excessively injected into the center portion of the wafer, so that the developer reacts with the photosensitive film to completely dissolve the exposed portion of the photosensitive film for a predetermined time. There was a problem that the reaction rate of the developer is lowered because it is left.

또한, 현상액이 웨이퍼 전체에 균일하게 분포되지 않은 상태에서 감광막과반응하게 되어 웨이퍼 내에 형성되어지는 패턴의 균일도가 떨어지며, 그로 인해 패턴이 불량해지는 문제점이 있었다.In addition, the developer is reacted with the photosensitive film in a state in which the developer is not evenly distributed throughout the wafer, thereby decreasing the uniformity of the pattern formed in the wafer, thereby resulting in a poor pattern.

본 발명은 상기와 같은 문제점을 해결하기 위해 안출된 것으로, 본 발명의 목적은 감광막 현상을 위한 현상액 반응 시, 퍼들(puddle) 단계에서 중간 중간에 웨이퍼를 흔들어주는 단계를 더 포함하여 실시함으로서 감광막 표면에 균일한 농도의 현상액을 형성하여 웨이퍼의 임계치(critical dimension)의 균일도 및 패턴 형성의 균일도를 향상시키는 반도체장치의 감광막 현상방법을 제공하는 것이다.The present invention has been made to solve the above problems, an object of the present invention is to further include the step of shaking the wafer in the middle of the puddle (puddle) during the reaction for the development of the photoresist film surface by performing The present invention provides a method for developing a photosensitive film of a semiconductor device in which a developer having a uniform concentration is formed on the wafer to improve the uniformity of the critical dimension of the wafer and the uniformity of pattern formation.

상기 목적을 달성하기 위하여, 본 발명은 소정의 패턴으로 노광된 감광막이 형성된 웨이퍼를 회전시키는 단계와, 노즐을 가진 분사장치를 사용하여 상기 감광막에 소량의 현상액을 분사하여 상기 감광막 전면을 덮는 현상액막을 형성하는 단계와, 상기 현상액막이 형성된 웨이퍼를 정지시키는 퍼들 단계와, 소정의 시간 경과 후 상기 웨이퍼를 세정하는 세정 단계를 포함하여 이루어진 감광막 현상방법에 있어서, 상기 퍼들 단계와 세정 단계 사이에 현상액이 웨이퍼 전체에 퍼지도록 흔들어주는 진동 단계를 더 포함하여 상기 퍼들 단계와 진동 단계를 교번하여 수차례 진행한 다음 세정 단계를 진행하는 것을 특징으로 하는 감광막 현상방법을 제공한다.In order to achieve the above object, the present invention comprises rotating the wafer on which the photosensitive film is exposed in a predetermined pattern, and using a spraying device having a nozzle to spray a small amount of developer onto the photosensitive film to cover the entire surface of the photosensitive film. A photosensitive film developing method comprising: forming, a puddle step of stopping a wafer on which a developer film is formed, and a cleaning step of cleaning the wafer after a predetermined time has elapsed, wherein a developer is disposed between the puddle step and the cleaning step. It further comprises a vibration step of spreading the whole to provide a photoresist developing method characterized in that the puddle step and the vibration step is carried out alternately several times and then the cleaning step.

또한, 본 발명은 상기 퍼들 단계를 5 ~ 15초 동안 진행한 다음 웨이퍼의 분당 회전수를 50 ~80 RPM으로 2 ~ 4초 동안 흔들어주는 진동 단계를 진행하여 웨이퍼의 중앙에 과도하게 분사된 현상액을 웨이퍼의 전면에 골고루 퍼지게 하여 현상액과의 감광막의 반응을 촉진하는 것을 특징으로 한다.In addition, the present invention proceeds the puddle step for 5 to 15 seconds and then proceeds to the vibration step of shaking the wafer revolutions per minute at 50 to 80 RPM for 2 to 4 seconds to the developer excessively injected to the center of the wafer It is characterized by promoting the reaction of the photosensitive film with the developer by spreading evenly over the entire surface of the wafer.

본 발명의 감광막 도포 후 마스크를 이용한 노광 공정을 실시한 감광막의 패턴 현상을 위한 공정은 다음과 같다.The process for pattern development of the photosensitive film which performed the exposure process using the mask after application | coating the photosensitive film of this invention is as follows.

먼저, 웨이퍼에 감광액을 도포한 다음 소정의 온도로 베이킹(baking)하여 감광막을 형성한다.First, a photoresist is applied to a wafer and then baked at a predetermined temperature to form a photoresist film.

그리고, 마스크를 사용하여 감광막을 설계된 패턴에 따라 선택적으로 노광시킨다.Then, the photosensitive film is selectively exposed to the designed pattern using a mask.

그 다음, 노광과 후노광 베이킹을 거친 웨이퍼를 현상장치의 받침대에 안착한다. 이때, 상기 받침대는 회전축에 의하여 모터와 연결되어 회전운동을 하게 된다.Then, the wafer subjected to the exposure and the post-exposure bake is placed on the pedestal of the developing apparatus. At this time, the pedestal is connected to the motor by the rotating shaft to perform a rotational movement.

그리고, 상기 받침대가 회전하는 상태에서 하나 또는 두개의 노즐로부터 현상액이 분사되며, 이러한 분사동작은 웨이퍼의 전면이 현상액으로 뒤덮을 때까지 진행된다. 이때, 현상액을 분사하는 노즐이 웨이퍼의 가장자리로부터 분사하기 시작해서 웨이퍼의 중심방향으로, 다시 웨이퍼의 중심방향에서 웨이퍼의 가장자리로 계속하여 현상액을 분사하며 이동하기 때문에 웨이퍼의 중앙 부분에 현상액이 과도하게 분사된다.Then, the developer is ejected from one or two nozzles while the pedestal is rotating, and this spraying operation is performed until the entire surface of the wafer is covered with the developer. At this time, the developer is sprayed from the edge of the wafer starts to spray from the edge of the wafer, and the developer is continuously moved to the edge of the wafer from the direction of the wafer to the edge of the wafer, so that the developer is excessively over the central portion of the wafer. Sprayed.

이어, 분사동작이 완료되면 현상액이 감광막의 노광부위를 완전히 용해시키도록 웨이퍼를 정지상태인 퍼들(puddle) 단계와 진동 단계를 교번하여 수차례 실시함으로써 웨이퍼의 중앙에 과도하게 분사된 현상액을 웨이퍼의 전면에 골고루 퍼지게 하여 현상액과의 감광막의 반응을 촉진하여 노광된 부위의 감광막을 현상액의 알칼리 성분으로 용해시켜 균일한 패턴을 형성한다.Subsequently, when the spraying operation is completed, the developer is repeatedly blown to the center of the wafer by repeatedly performing the puddle step and the vibration step in which the developer is completely dissolved so as to completely dissolve the exposed portion of the photoresist film. It spreads evenly over the whole surface and promotes reaction of the photosensitive film with a developing solution, and melt | dissolves the photosensitive film of the exposed site | part by the alkali component of a developing solution, and forms a uniform pattern.

이때, 상기 퍼들 단계는 5 ~ 15초 동안 진행하고 진동 단계는 웨이퍼 내의 현상액막이 웨이퍼 밖으로 떨어지지 않게 웨이퍼의 분당 회전수를 저 RPM으로 즉, 50 ~ 80 RPM으로 하여 웨이퍼를 2 ~ 4초 동안 흔들어준다.At this time, the puddle step proceeds for 5 to 15 seconds and the vibration step shakes the wafer for 2 to 4 seconds at a low RPM, that is 50 to 80 RPM of the wafer per minute so that the developer film in the wafer does not fall out of the wafer .

이후, 세정공정을 실시하여 웨이퍼의 표면을 세척하면 현상공정이 완료된다.Thereafter, when the surface of the wafer is washed by performing a cleaning process, the developing process is completed.

따라서, 상기한 바와 같이, 본 발명에 따른 반도체장치의 감광막 현상방법을 이용하게 되면, 감광막 현상을 위한 현상액 반응 시, 퍼들(puddle) 단계에서 중간 중간에 웨이퍼를 흔들어주는 단계를 더 포함하여 실시하므로서 감광막 표면에 균일한 농도의 현상액을 형성하여 웨이퍼의 임계치(critical dimension)의 균일도를 향상시킬 수 있을 뿐만 아니라 현상액의 반응속도를 촉진시켜 패턴을 형성을 위한 공정시간을 단축할 수 있는 효과가 있다.Therefore, as described above, when the photosensitive film developing method of the semiconductor device according to the present invention is used, the method further includes shaking the wafer in the middle of the puddle during the reaction of the developer for the photosensitive film development. By forming a developer having a uniform concentration on the surface of the photoresist film, the uniformity of the critical dimension of the wafer may be improved, and the reaction time of the developer may be accelerated to shorten the process time for pattern formation.

Claims (3)

소정의 패턴으로 노광된 감광막이 형성된 웨이퍼를 회전시키는 단계와, 노즐을 가진 분사장치를 사용하여 상기 감광막에 소량의 현상액을 분사하여 상기 감광막 전면을 덮는 현상액막을 형성하는 단계와, 상기 현상액막이 형성된 웨이퍼를 정지시키는 퍼들 단계와, 소정의 시간 경과 후 상기 웨이퍼를 세정하는 세정 단계를 포함하여 이루어진 감광막 현상방법에 있어서,Rotating the wafer on which the photoresist film exposed in a predetermined pattern is formed; forming a developer film covering the entire surface of the photoresist film by spraying a small amount of developer onto the photoresist film using an injector having a nozzle; and a wafer on which the developer film is formed. In the photosensitive film development method comprising a puddle step of stopping the step and a cleaning step of cleaning the wafer after a predetermined time elapses, 상기 퍼들 단계와 세정 단계 사이에 현상액이 웨이퍼 전체에 퍼지도록 흔들어주는 진동 단계를 더 포함하여 상기 퍼들 단계와 진동 단계를 교번하여 수차례 진행한 다음 세정 단계를 진행하는 것을 특징으로 하는 감광막 현상방법.And a vibrating step of shaking the developer so as to spread throughout the wafer between the puddle step and the cleaning step. 제 1항에 있어서, 상기 퍼들 단계를 5 ~ 15초 동안 진행한 다음 2 ~ 4초 동안 진동 단계를 진행하는 것을 특징으로 하는 감광막 현상방법.The method of claim 1, wherein the puddle step is performed for 5 to 15 seconds and then the vibration step is performed for 2 to 4 seconds. 제 1항 또는 제 2항에 있어서, 상기 진동 단계는 웨이퍼의 분당 회전수를 50 ~80 RPM으로 진행하는 것을 특징으로 하는 감광막 현상방법.The photosensitive film developing method according to claim 1 or 2, wherein the vibrating step advances the revolutions per minute of the wafer at 50 to 80 RPM.
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