JPH0645244A - Development method in ic manufacturing - Google Patents

Abstract

PURPOSE:To provide a development method used in an IC manufacturing step, in which a scum of a photoresist film remaining on a wafer is prevented in a puddle development method. CONSTITUTION:While a wafer 11 is rotated at low speed, or put in a stationary state, a developer 16 is poured on the wafer 11, and a development step is progressing in this state. A spray of the developer 16 mixed with a gas is blown to the wafer 11 while the wafer 11 is rotated at high speed. After the development step is completed, a rinsing 19 is poured on the wafer 11 while the wafer 11 is rotated at high speed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a developing method in the manufacture of ICs, and more particularly to a developing method in the manufacture of ICs by improving the paddle system development and the aspirate system development in the IC manufacturing process by photolithography.

[0002]

2. Description of the Related Art Conventionally, the paddle type development in the IC manufacturing process by this type of photolithography is performed as shown in FIG.

First, as shown in FIG.
While the wafer 1 made of Si or the like is rotated at a low rotation speed by a spinner (not shown), or while the wafer 1 is stationary, the developer 3 is ejected from above the developing solution ejecting nozzle 2 onto the wafer 1. To fill

Next, as shown in FIG.
The wafer 1 filled with the developing solution 3 is left still for the developing time.

After the development is completed, as shown in FIG. 3C, the rinse liquid 5 is discharged from the rinse liquid discharge nozzle 4 from above the wafer 1 while rotating the wafer 1 at a high speed by a spinner. ing.

Further, the aspirating method development is performed as shown in FIG.

First, as shown in FIG.
While rotating the wafer 1 made of Si or the like at a high speed with a spinner, the developing solution 3 and the nitrogen gas (N ₂ ) are sprayed from above onto the wafer 1 from the spray nozzle 6 at a ratio of about 1: 1. .

After that, as shown in FIG. 3B, a rinsing process is carried out in the same manner as in the paddle system development.

[0009]

By the way, in the paddle type development as described above, there is a problem that the scum of the photoresist film which has been peeled off by the development but not yet melted remains on the wafer 1. was there.

On the other hand, in the aspirating system development,
There was no such problem.

In view of the above problems, an object of the present invention is to provide a developing method in IC manufacturing which can prevent the scum of the photoresist film from remaining on the wafer in the paddle type development.

[0012]

SUMMARY OF THE INVENTION According to the developing method in IC manufacturing according to the present invention, the above object is obtained by adding a developing solution onto the wafer while rotating the wafer at a low speed or while keeping the wafer stationary. In this state, the development proceeds, and after that,
While rotating this at high rotation, spraying and spraying the developing solution and gas onto this wafer, after completion of development, while rotating this wafer at high rotation, by pouring the rinse solution on it, To be achieved.

[0013]

According to the above construction, immediately before the completion of the development of the wafer filled with the developing solution by the paddle system development, the developing solution and the gas are sprayed and sprayed onto the wafer while rotating the wafer at a high rotation speed. .

This is because the scum of the photoresist film, which has been peeled off by the development but not yet melted, remains on the wafer only by the paddle system development.

However, by performing the development by the paddle system development until just before the development is completed, and then continuing the aspirate system development, it is possible to prevent the scum of the photoresist film from remaining on the wafer in the paddle system development. Is what you can do.

[0016]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A preferred embodiment of a developing method in IC manufacturing according to the present invention will be described in detail below with reference to the accompanying drawings. The developing method of this embodiment is performed in the developing process in the IC manufacturing process, and will be described in the order of the steps.

First, as shown in FIG.
An oxide film 12 such as SiO ₂ is uniformly formed on the wafer 11 or the like.

Next, as shown in FIG. 3, a photoresist film 13 is applied on the oxide film 12 of the wafer 11 to a predetermined thickness.

Then, as shown in FIG. 4, a portion of the photoresist film 13 corresponding to the portion where the pattern of the oxide film 12 is formed on the wafer 11 is masked, and light is applied from above the mask 14. Irradiate L. Then,
The photoresist film 13 located in the opening 14a of the mask 14 is exposed.

After that, as shown in FIG. 1, the process proceeds to the developing process and the developing method of this embodiment is performed.

In the developing method of this embodiment, first, in FIG.
, While rotating the wafer 11 at a low speed with a spinner (not shown), or
With the nozzle stationary, the developer discharge nozzle 15
Further, the developing solution 16 is discharged to fill the wafer 11.

Next, as shown in FIG.
With the developing solution 16 placed on the wafer 11, the development is advanced until just before the completion of the development.

Thereafter, as shown in (c) in the figure, while the wafer 11 immediately before the completion of the development is rotated at a high speed by a spinner, the developer 16 and the nitrogen gas (N ₂ ) And are sprayed at a ratio of about 1: 1 and sprayed on the wafer 11.

Then, as shown in FIG. 3D, after the development, the rinse liquid discharge nozzle 18 is rotated from above while rotating the wafer 11 at a high speed by a spinner.
More rinse liquid 19 is discharged.

After completion of the development processing steps as described above, FIG.
Developed photoresist film 1 as shown in FIG.
3 will remain on the oxide film 12.

After the developed photoresist film 13 is left on the oxide film 12 of the wafer in this way, the oxide film 12 is etched 20 as shown in FIG. By this etching process 20, the oxide film 12 not covered with the photoresist film 13 is removed from the wafer 11, and only the oxide film 12 under the photoresist film 13 remains on the wafer 11.

Finally, when the photoresist film 13 is removed, the oxide film 12 remaining on the wafer 11 is formed as a pattern as shown in FIG.

Next, the operation of the above embodiment will be described.
As described above, in the developing process in the IC manufacturing process, the developing method of the present embodiment is such that the wafer 11 on which the developer 16 is filled by the paddle system development is rotated at a high rotation speed immediately before the completion of the development. The developer 16 and nitrogen gas (N ₂ ) are sprayed onto the wafer 11 by the spray nozzle 17 and sprayed.

This is because the scum of the photoresist film 13 which has been peeled off by the development but not completely melted remains on the wafer 11 only by the paddle system development.

Therefore, in the developing method of this embodiment,
It is possible to prevent the scum of the photoresist film 13 from remaining on the wafer 11 in the paddle system development by advancing the development by the paddle system development until just before the completion of the development and then continuing the aspirating system development. It is possible.

[0031]

As described above, according to the developing method in the IC manufacturing according to the present invention, in the paddle system developing,
It has an excellent effect that it is possible to prevent the scum of the photoresist film from remaining on the wafer.

[Brief description of drawings]

FIG. 1 is a schematic view showing a developing method in IC production according to the present invention.

FIG. 2 is a schematic view showing a state in which an oxide film is formed on a wafer in an IC manufacturing process.

FIG. 3 is a schematic view showing a state in which a photoresist film is applied on an oxide film of a wafer in an IC manufacturing process.

FIG. 4 is a schematic view showing an exposed state of a masking film and a photoresist film in an IC manufacturing process.

FIG. 5 is a schematic view showing a state where a developed photoresist film remains on an oxide film in an IC manufacturing process.

FIG. 6 is a schematic view showing a state in which an oxide film is subjected to etching treatment in an IC manufacturing process.

FIG. 7 is a schematic view showing a state in which an oxide film pattern is formed by removing a developed photoresist film in an IC manufacturing process.

FIG. 8 is a schematic view showing conventional paddle type development.

FIG. 9 is a schematic view showing conventional aspirating method development.

[Explanation of symbols]

 11 Wafer 12 Oxide Film 13 Photoresist Film 14 Mask 14a Opening 15 Developer Ejection Nozzle 16 Developer 17 Spray Nozzle 18 Rinse Ejection Nozzle 19 Rinse 20 Etching L Light

Claims (1)

[Claims] 1. A wafer is rotated at a low speed or while it is stationary, a developing solution is poured on the wafer, and development is allowed to proceed in this state. After that, the wafer is rotated at a high speed. A developing method in IC manufacturing, characterized in that a developing solution and a gas are sprayed onto the surface and sprayed, and after the development is completed, the wafer is rotated at a high rotation speed and a rinse solution is poured into the wafer.