KR20010009035A - A method of developing photoresist - Google Patents

A method of developing photoresist Download PDF

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Publication number
KR20010009035A
KR20010009035A KR1019990027172A KR19990027172A KR20010009035A KR 20010009035 A KR20010009035 A KR 20010009035A KR 1019990027172 A KR1019990027172 A KR 1019990027172A KR 19990027172 A KR19990027172 A KR 19990027172A KR 20010009035 A KR20010009035 A KR 20010009035A
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South Korea
Prior art keywords
wafer
developer
film
photosensitive film
developing
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KR1019990027172A
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Korean (ko)
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김은종
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김영환
현대반도체 주식회사
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Priority to KR1019990027172A priority Critical patent/KR20010009035A/en
Publication of KR20010009035A publication Critical patent/KR20010009035A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

PURPOSE: Provided is a process for developing a photosensitive film of a semiconductor apparatus, which can improve homogeneity of critical dimension of a wafer by spreading a developer having homogeneous alkali concentration on the surface of the photosensitive film. CONSTITUTION: The process comprises the steps of: rotating the wafer(24) forming the exposed photosensitive film; injecting a little developer on the whole photosensitive film by using an injecting device(25) having a plurality of nozzles(N2) distributed regularly to form a first developer film; stopping the wafer(24); forming a second developer film on the first developer film by using the injecting device(25); cleansing the wafer(24).

Description

감광막 현상방법{A method of developing photoresist}Photosensitive film development method {A method of developing photoresist}

본 발명은 반도체장치의 감광막 현상방법에 관한 것으로서, 특히, 감광막 현상을 위한 현상액 분사를 다수개의 분사용 노즐이 형성된 분사장치를 사용하여 일차로 현상액을 감광막 위에 얇게 도포시키는 단계와 이차로 주(main) 분사하는 두 단계로 나누어 실시하므로서 감광막 표면에 균일한 알칼리 농도의 현상액을 형성하여 웨이퍼의 임계치(critical dimension)의 균일도를 향상시키는 반도체장치의 감광막 현상방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for developing a photoresist film of a semiconductor device. In particular, a developer is applied to a photoresist film thinly by using a spraying device having a plurality of nozzles for spraying a developer for developing a photoresist film. The present invention relates to a method for developing a photosensitive film of a semiconductor device in which a developer having a uniform alkali concentration is formed on the surface of the photosensitive film to improve uniformity of a critical dimension of a wafer.

반도체장치에서 형성되어야하는 패턴들의 크기가 감소함에 따라 이들의 임계치(critical dimension)의 관리가 매우 중요하다.As the size of patterns to be formed in semiconductor devices is reduced, management of their critical dimensions is very important.

종래 기술의 감광막 도포 후 마스크를 이용한 노광 공정을 실시한 감광막의 패턴 현상을 위한 공정은 다음과 같다.The process for pattern development of the photosensitive film which performed the exposure process using a mask after apply | coating the photosensitive film of a prior art is as follows.

먼저, 웨이퍼에 감광액을 도포한 다음 소정의 온도로 베이킹(baking)하여 감광막을 형성한다.First, a photoresist is applied to a wafer and then baked at a predetermined temperature to form a photoresist film.

그리고, 마스크를 사용하여 감광막을 설계된 패턴에 따라 선택적으로 노광시킨다.Then, the photosensitive film is selectively exposed to the designed pattern using a mask.

그 다음, 감광막의 전면에 현상액을 분사하여 노광된 부위의 감광막을 현상액의 알칼리 성분으로 용해시켜 패턴을 형성한다.Then, a developer is sprayed on the entire surface of the photoresist film to dissolve the exposed photoresist film with an alkali component of the developer to form a pattern.

이후, 세정공정을 실시하여 웨이퍼의 표면을 세척하면 현상공정이 완료된다.Thereafter, when the surface of the wafer is washed by performing a cleaning process, the developing process is completed.

도 1은 종래 기술에 따른 반도체장치의 감광막 현상방법을 도시한 모식도이다.1 is a schematic diagram showing a photosensitive film developing method of a semiconductor device according to the prior art.

도 1을 참조하면, 노광된 감광막이 형성된 웨이퍼(14)를 회전시키기 위한 모터(11)가 설치된 받침대(13) 상에 웨이퍼(14)가 안착되어 있다. 이때, 받침대(13)는 회전축(12)에 의하여 모터(11)와 연결되어 회전운동을 하게 된다.Referring to FIG. 1, a wafer 14 is seated on a pedestal 13 provided with a motor 11 for rotating a wafer 14 on which an exposed photosensitive film is formed. At this time, the pedestal 13 is connected to the motor 11 by the rotation shaft 12 to perform a rotational movement.

이러한 웨이퍼(14)가 회전하면 분사장치(15)의 하나 내지 두 개의 분사용 노즐(N1)을 통하여 현상액이 웨이퍼(14) 표면의 노광된 감광막 상에 도포된다.When the wafer 14 is rotated, the developer is applied onto the exposed photosensitive film on the surface of the wafer 14 through one or two jetting nozzles N1 of the jetting apparatus 15.

즉, 노광과 후노광 베이킹(post exposure baking)을 거친 웨이퍼(14)는 현상장치의 받침대(13)에 안착된다.That is, the wafer 14 that has undergone exposure and post exposure baking is seated on the pedestal 13 of the developing apparatus.

그리고, 모터(11)의 힘으로 받침대(13)가 회전하는 상태에서 두 개의 노즐(N1)로부터 현상액이 분사되며, 이러한 분사동작은 웨이퍼(14)의 전면이 현상액을 뒤덮일 때까지 진행된다.Then, the developer is injected from the two nozzles N1 in the state in which the base 13 is rotated by the force of the motor 11, and this spraying operation is performed until the entire surface of the wafer 14 covers the developer.

분사동작이 완료되면 현상액이 감광막의 노광부위를 완전히 용해시키도록 웨이퍼(14)를 그 상태로 50-60초 동안 놓아둔다.When the ejection operation is completed, the wafer 14 is left in that state for 50 to 60 seconds so that the developer completely dissolves the exposed portion of the photosensitive film.

그 다음, 현상되어 용해된 감광막의 찌꺼기를 순수(DI water)로 세정하여 제거한다.Then, the debris of the developed and dissolved photoresist film is removed by washing with pure water (DI water).

회전하는 웨이퍼의 감광막에 대한 두 개의 노즐(N1)을 통한 현상액 분사과정은 다음과 같다.The process of spraying the developer through the two nozzles N1 on the photosensitive film of the rotating wafer is as follows.

먼저, 노즐(N1)이 웨이퍼(14)의 중심으로부터 2/3 되는 지점에서 현상액을 분사하기 시작하며 웨이퍼의 중심 방향으로 서서히 이동한다(IN).First, the nozzle N1 starts to spray the developer at a point two-thirds from the center of the wafer 14 and gradually moves to the center direction of the wafer (IN).

웨이퍼(14) 중심까지 이동한 분사장치(15)는 계속 현상애을 분사하면서 웨이퍼(14) 가장자리 방향으로 이동한다(OUT).The injection apparatus 15 which moved to the center of the wafer 14 moves to the edge direction of the wafer 14, continuing to spray a developing solution (OUT).

이와 같이 현상액 분사동작이 다단계의 과정으로 실시되는 이유는 노광공정을 거친 감광막이 형성된 웨이퍼의 전면을 현상액으로 완전히 적셔주어 현상불량을 방지하기 위해서이다.The reason why the developer spraying operation is performed in a multi-step process is to completely wet the entire surface of the wafer on which the photosensitive film has been subjected to the exposure process with the developer to prevent developing defects.

상술한 종래 기술에 따른 감광막 현상방법에서 웨이퍼 전면을 현상액으로 적셔주기 위하여 웨이퍼를 저속으로 회전시키면서 두 개의 노즐을 통하여 현상액을 분사하기 때문에 현상액이 처음 분사되어지는 감광막 부위는 순간적으로 현상액의 알칼리 농도가 높은 상태에서 현상작용이 일어나 타 부위보다 상대적으로 많이 현상되고, 또한, 웨이퍼가 저속으로 회전하므로, 웨이퍼상의 현상액 임계치의 분포도는 회오리 모양을 이루는 부위가 타 부위보다 낮은 값을 갖게 되어 그 균일도가 열악하게 되는 문제점이 있다.In the photosensitive film developing method according to the related art, the developer is sprayed through two nozzles while rotating the wafer at a low speed to wet the entire surface of the wafer with a developer, so that the alkali concentration of the developer is instantaneously increased. The development occurs in a high state and develops relatively more than other parts, and since the wafer rotates at a low speed, the distribution of the developer threshold on the wafer has a lower value than that of other parts because the whirlpool has a lower value than the other parts. There is a problem.

따라서, 본 발명의 목적은 반도체장치의 제조시 감광막 현상방법에 있어서 감광막의 현상액을 웨이퍼 전면에 동시에 분사하므로서 웨이퍼상의 임계치 균일도를 향상시키는 반도체장치의 감광막 현상방법을 제공하는데 있다..Accordingly, an object of the present invention is to provide a method for developing a photosensitive film of a semiconductor device which improves the threshold uniformity on a wafer by simultaneously spraying the developer of the photosensitive film on the entire surface of the photosensitive film developing method in manufacturing the semiconductor device.

상기 목적을 달성하기 위한 본 발명에 따른 반도체장치의 감광막 현상방법은 소정의 패턴으로 노광된 감광막이 형성된 웨이퍼를 회전시키는 단계와, 균일한 밀도로 분포된 다수개의 노즐을 갖는 분사장치를 사용하여 감광막에 소량의 현상액을 분사하여 감광막 전면을 덮는 제 1 현상액막을 형성하는 단계와, 웨이퍼를 정지시키는 단계와, 분사장치를 이용하여 제 1 현상액막 위에 제 2 현상액막을 형성하는 단계와, 소정의 시간 경과 후 웨이퍼를 세정하는 단계를 포함하여 이루어진다.A photosensitive film developing method of a semiconductor device according to the present invention for achieving the above object is a photosensitive film using a step of rotating a wafer on which a photosensitive film exposed in a predetermined pattern is formed, and a spray device having a plurality of nozzles distributed at a uniform density Forming a first developer film covering the entire photoresist film by spraying a small amount of developer onto the substrate; stopping the wafer; forming a second developer film on the first developer film using a spraying device; And then cleaning the wafer.

도 1은 종래 기술에 따른 반도체장치의 감광막 현상방법을 도시한 모식도1 is a schematic diagram showing a photosensitive film developing method of a semiconductor device according to the prior art;

도 2는 본 발명에 따른 반도체장치의 감광막 현상방법을 도시한 모식도2 is a schematic view showing a photosensitive film developing method of a semiconductor device according to the present invention.

도 3은 본발명에 따른 반도체장치의 감광막 현상을 위한 현상액 분사장치 노즐의 저면도3 is a bottom view of a developer injector nozzle for developing a photoresist film of a semiconductor device according to the present invention.

이하, 첨부한 도면의 흐름도를 참조하여 본 발명을 상세히 설명한다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

도 2는 본 발명에 따른 반도체장치의 감광막 현상방법을 도시한 모식도이고, 도 3은 도 2의 감광막 현상을 위한 현상액 분사장치 노즐의 저면도이다.FIG. 2 is a schematic view showing a method of developing a photoresist film of a semiconductor device according to the present invention, and FIG.

도 2와 도 3을 참조하면, 웨이퍼를 회전시키기 위한 모터(21)가 설치된 받침대(23) 상에 노광된 감광막이 형성된 웨이퍼(24)가 안착되어 있다. 이때, 받침대(23)는 회전연결축(22)에 의하여 모터(21)와 연결되어 회전운동을 하게 된다.2 and 3, a wafer 24 on which an exposed photosensitive film is formed is mounted on a pedestal 23 provided with a motor 21 for rotating the wafer. At this time, the pedestal 23 is connected to the motor 21 by the rotation connecting shaft 22 to perform a rotational movement.

이러한 웨이퍼(24)가 회전하면 분사장치(25,31)의 다수개의 방사형 분사용 노즐(N2,32)을 통하여 현상액이 웨이퍼(24) 표면의 노광된 감광막 상에 도포된다.When the wafer 24 rotates, the developer is applied onto the exposed photoresist on the surface of the wafer 24 through the plurality of radial jetting nozzles N2 and 32 of the injectors 25 and 31.

본 발명에 따른 현상단계는 다음과 같다.The developing step according to the present invention is as follows.

노광과 후노광 베이킹(post exposure baking)을 거친 웨이퍼(24)는 현상장치의 받침대(23)에 안착된다.The wafer 24, which has undergone exposure and post exposure baking, is seated on a pedestal 23 of the developing apparatus.

그리고, 모터(21)의 힘으로 받침대(23)가 고속으로 회전하는 상태에서 다수개의 노즐(N2)로부터 약 0.5초동안 아주 작은 양의 현상액이 분사되며, 이러한 제 1 분사동작은 웨이퍼(24)의 전면이 현상액으로 살짝 뒤덮일 때까지 진행된다. 이는, 웨이퍼(24)의 감광막 전면을 매우 얇은 현상액막으로 덮어주므로서 이후 정지된 웨이퍼 상에 최소양의 현상액으로 감광막 전면을 밀착성 있게 적시는 것을 용이하게 하기 위해서이다.Then, a very small amount of developer is injected from the plurality of nozzles N2 for about 0.5 seconds while the pedestal 23 rotates at high speed by the force of the motor 21, and this first injection operation is performed by the wafer 24. Continue until the front of is slightly covered with developer. This is because the entire surface of the photosensitive film of the wafer 24 is covered with a very thin developer film, thereby facilitating adhesion of the entire surface of the photosensitive film with a minimum amount of developer on the stationary wafer.

제 1 분사동작이 완료되면, 제 2 분사동작을 정지되어 있는 웨이퍼상의 감광막에 실시한다.When the first injection operation is completed, the second injection operation is performed on the photosensitive film on the wafer which is stopped.

제 2 분사동작은 다음과 같다.The second injection operation is as follows.

매우 얇은 현상액막이 형성된 감광막 전면에 다수개의 분사노즐(N2)을 통하여 약 2 초 동안 현상액을 동시에 분사한다. 이때, 웨이퍼의 직경과 분사장치(25)의 직경이 비슷하므로 균일한 밀도로 형성된 다수개의 노즐(N2)을 통하여 현상액이 이미 웨이퍼의 표면에 형성된 현상액막 전면에 분사된다. 따라서, 감광막 위에 직접적으로 전체 현상액을 분사하는 것 보다 작은양의 현상액으로도 효과적으로 웨이퍼 전면의 감광막을 적셔줄 수 있다.The developer is sprayed simultaneously for about 2 seconds through the plurality of injection nozzles N2 on the entire surface of the photosensitive film where a very thin developer film is formed. At this time, since the diameter of the wafer and the diameter of the injector 25 are similar, the developer is sprayed onto the entire surface of the developer film already formed on the surface of the wafer through the plurality of nozzles N2 formed with uniform density. Therefore, it is possible to effectively wet the photoresist film on the entire surface of the wafer even with a small amount of developer rather than spraying the entire developer directly onto the photoresist film.

이후, 현상작용이 충분히 진행되도록 소정의 시간이 경과한 다음, 현상되어 용해된 감광막의 찌꺼기를 순수(DI water)로 세정하여 제거한다.Thereafter, after a predetermined time has elapsed so that the developing operation sufficiently proceeds, the residue of the developed and dissolved photoresist film is washed with pure water (DI water) and removed.

본 발명에 따른 반도체장치의 감광막 현상방법은 작은 양의 현상액으로 감광막 전면을 동시에 적셔주므로 균일한 알칼리 농도를 유지하여 웨이퍼상의 임계치 균일도를 향상시키는 장점이 있다.The development method of the photosensitive film of the semiconductor device according to the present invention has the advantage of improving the uniformity of the threshold value on the wafer by maintaining a uniform alkali concentration since the entire surface of the photosensitive film is simultaneously wetted with a small amount of developer.

Claims (3)

소정의 패턴으로 노광된 감광막이 형성된 웨이퍼를 회전시키는 단계와,Rotating the wafer on which the photosensitive film exposed in a predetermined pattern is formed; 균일한 밀도로 분포된 다수개의 노즐을 갖는 분사장치를 사용하여 상기 감광막에 소량의 현상액을 분사하여 상기 감광막 전면을 덮는 제 1 현상액막을 형성하는 단계와,Forming a first developer film covering the entire surface of the photoresist film by spraying a small amount of developer onto the photoresist film using an injector having a plurality of nozzles distributed at a uniform density; 상기 웨이퍼를 정지시키는 단계와,Stopping the wafer; 상기 분사장치를 이용하여 상기 제 1 현상액막 위에 제 2 현상액막을 형성하는 단계와,Forming a second developer film on the first developer film by using the injection apparatus; 소정의 시간 경과 후 상기 웨이퍼를 세정하는 단계로 이루어진 감광막 현상방법.And cleaning the wafer after a predetermined time has elapsed. 청구항 1에 있어서, 상기 웨이퍼는 고속으로 회전시키는 것이 특징인 감광막 현상방법.The method of claim 1, wherein the wafer is rotated at a high speed. 청구항 1에 있어서, 상기 분사장치의 상기 웨이퍼의 직경보다 크거나 같은 것이 특징인 감광막 현상방법.The method of claim 1, wherein the photoresist is larger than or equal to the diameter of the wafer of the injector.
KR1019990027172A 1999-07-07 1999-07-07 A method of developing photoresist KR20010009035A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020067260A (en) * 2001-02-16 2002-08-22 동부전자 주식회사 A circle type photoresist developing device
KR100747794B1 (en) * 2005-12-28 2007-08-08 고려대학교 산학협력단 The microactuator with the finger having asymmetric protrusions and the method for manufacturing asymmetric protrusions

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020067260A (en) * 2001-02-16 2002-08-22 동부전자 주식회사 A circle type photoresist developing device
KR100747794B1 (en) * 2005-12-28 2007-08-08 고려대학교 산학협력단 The microactuator with the finger having asymmetric protrusions and the method for manufacturing asymmetric protrusions

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