KR20040002281A - Cleaning Method of Semiconductor Device - Google Patents
Cleaning Method of Semiconductor Device Download PDFInfo
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- KR20040002281A KR20040002281A KR1020020037731A KR20020037731A KR20040002281A KR 20040002281 A KR20040002281 A KR 20040002281A KR 1020020037731 A KR1020020037731 A KR 1020020037731A KR 20020037731 A KR20020037731 A KR 20020037731A KR 20040002281 A KR20040002281 A KR 20040002281A
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- tungsten
- cleaning
- pattern
- semiconductor device
- mixed solution
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- 238000000034 method Methods 0.000 title claims abstract description 61
- 238000004140 cleaning Methods 0.000 title claims abstract description 30
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 31
- 239000010937 tungsten Substances 0.000 claims abstract description 31
- 238000005530 etching Methods 0.000 claims abstract description 23
- 239000000203 mixture Substances 0.000 claims abstract description 11
- 239000002245 particle Substances 0.000 claims abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 5
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000011259 mixed solution Substances 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000000908 ammonium hydroxide Substances 0.000 claims description 2
- 238000005406 washing Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052710 silicon Inorganic materials 0.000 abstract description 8
- 239000010703 silicon Substances 0.000 abstract description 8
- 235000011114 ammonium hydroxide Nutrition 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 description 18
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 9
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 6
- 229910052731 fluorine Inorganic materials 0.000 description 6
- 239000011737 fluorine Substances 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000012153 distilled water Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910008938 W—Si Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
본 발명은 반도체 소자의 세정 방법에 관한 것으로, 보다 상세하게는 반도체 소자의 제조 공정에서 하드 마스크로 사용하는 텅스텐 (W) 잔류물 등을 효과적으로 제거하기 위하여, 수산화 암모늄/과산화 수소수 (NH4OH/H2O2)로 이루어진 혼합 용액을 이용하는 반도체 소자의 세정 방법에 관한 것이다.The present invention relates to a cleaning method of semiconductor devices, and more particularly, to remove the tungsten (W) residue, such as using a hard mask in the manufacturing process of semiconductor devices efficiently, ammonium hydroxide / hydrogen peroxide small number of (NH 4 OH / H 2 O 2 ) relates to a method for cleaning a semiconductor device using a mixed solution consisting of.
현재 반도체 소자가 점점 미세화 되고, 고집적화 됨에 따라 반도체 제조 공정에서는 0.01㎛ 이하의 미세 패턴을 구현하기 위하여 기존의 KrF 포토레지스트가 아닌 ArF 계열의 포토레지스트를 이용하는 노광 기술에 대한 연구가 활발히 진행 되고 있다.As semiconductor devices become more and more finely integrated and highly integrated, researches on exposure technologies using ArF-based photoresists, rather than conventional KrF photoresists, have been actively conducted in the semiconductor manufacturing process to realize fine patterns of 0.01 μm or less.
이러한 ArF용 포토레지스트를 이용하여 노광 공정과 불소계 플라즈마 (fluorine-base plasma)를 이용하는 건식 식각 (etch) 공정을 차례로 수행하면, 웨이퍼 (wafer) 표면에 미세 패턴이 형성된다.When the exposure process and the dry etching process using a fluorine-based plasma are performed using the photoresist for ArF, a fine pattern is formed on the wafer surface.
그러나, 상기와 같은 불소계 플라즈마를 이용한 식각 공정을 수행할 때, 사용하는 ArF 포토레지스트가 화학적 변화를 일으키면서 패턴에 홈 (striation)이나 변형 (deformation) 등이 발생하는 문제가 있었다.However, when performing the etching process using the fluorine-based plasma as described above, the ArF photoresist used has a problem that the groove (striation), deformation (formation), etc. occur in the pattern while causing a chemical change.
이러한 문제를 해결하기 위하여 제시된 방법이 ArF 포토레지스트에 대해서는 염소계 플라즈마를 이용한 식각 공정을 수행하고, 후속 식각 공정에서 텅스텐을 하드 마스크로 사용하여 불소계 플라즈마를 이용한 식각 공정을 수행함으로써, 안정한 형태의 패턴을 얻는 것이었다.In order to solve this problem, the proposed method performs an etching process using a chlorine plasma on an ArF photoresist and an etching process using a fluorine plasma using tungsten as a hard mask in a subsequent etching process. Was to get.
이하 상기 종래의 공정을 첨부된 도면에 의거하여 상세히 설명하되, 반도체 소자의 공정 방법을 예를 들어 설명한다.Hereinafter, the conventional process will be described in detail with reference to the accompanying drawings, and a process method of a semiconductor device will be described by way of example.
우선 도 1a에 도시한 바와 같이 반도체 기판 즉, 실리콘 (Si) 기판 (1) 상에 폴리 실리콘 층 (3), 텅스텐-실리콘 (W-Si) 층 (5), PE-질화막 (plasma enhancement-CVD nitride; 이하 "PENIT”라 칭함) 층 (7) 및 텅스텐 층 (9)이 순차적으로 적층 되어 있는 금속 배선을 형성한 다음, 상기 텅스텐 층 (9) 상부에 포토레지스트 (11)를 도포하고, 노광 및 현상 공정을 이용하여 포토레지스트 패턴을 형성하였다.First, as shown in FIG. 1A, a polysilicon layer 3, a tungsten-silicon (W-Si) layer 5, and a PE-nitride film (plasma enhancement-CVD) are formed on a semiconductor substrate, that is, a silicon (Si) substrate 1. After forming a metal wiring in which the layer 7 and the tungsten layer 9 are sequentially stacked, a photoresist 11 is applied on the tungsten layer 9 and exposed. And a photoresist pattern was formed using the developing process.
그 후, 도 1b에 도시한 바와 같이 상기 포토레지스트 패턴을 마스크로 하는 염소계 플라즈마 (chloride-base plasma)를 이용한 건식 식각 공정으로 텅스텐 층 (9)을 식각하여 텅스텐 패턴을 형성하였는데, 이는 불소계 플라즈마를 이용한 식각 공정을 수행하면 ArF 포토레지스트가 화학적 변화를 일으키기 때문이다.Thereafter, as illustrated in FIG. 1B, the tungsten layer 9 was etched by a dry etching process using a chloride-base plasma using the photoresist pattern as a mask to form a tungsten pattern. This is because ArF photoresist causes chemical change when the etching process is performed.
그리고, 도 1c에 도시한 바와 같이 상기 형성된 텅스텐 패턴을 하드 마스크로, 불소계 플라즈마를 이용하여 PENIT 층 (7)을 건식 식각하면 PENIT 패턴이 형성되고, 도 1d에 도시한 바와 같이 상기 PENIT 패턴을 마스크로 텅스텐-실리콘 층 (5)을 식각하여 텅스텐-실리콘 패턴을 형성하였다.As shown in FIG. 1C, if the formed tungsten pattern is used as a hard mask and dry etching of the PENIT layer 7 using fluorine-based plasma, a PENIT pattern is formed, and as shown in FIG. 1D, the PENIT pattern is masked. The tungsten-silicon layer 5 was etched to form a tungsten-silicon pattern.
마지막으로, 상기 텅스텐-실리콘 패턴을 마스크로 폴리실리콘 층 (3)을 식각하여 폴리실리콘 패턴이 형성된 반도체 소자의 금속 배선 패턴을 제조하였다.Finally, the polysilicon layer 3 was etched using the tungsten-silicon pattern as a mask to prepare a metal wiring pattern of the semiconductor device on which the polysilicon pattern was formed.
이때, 상기와 같이 텅스텐을 하드 마스크로 이용하면, 도 1e에서 도시한 바와 같이 식각 공정이 완료 후에도 텅스텐 잔류물 (residue)이나 기타 식각 공정에서 발생된 입자 (particle) 등이 완전히 제거되지 않고 패턴 상층 부에 잔류하여 후속 공정에 영향을 주게 된다.In this case, when tungsten is used as the hard mask as described above, even after the etching process is completed, as shown in FIG. 1E, the tungsten residue or other particles generated in the etching process may not be completely removed, but the upper layer of the pattern may be removed. It will remain in the part and affect subsequent processes.
이러한 문제점을 해결하기 위하여, 플라즈마 식각 공정을 더 수행하여 상기 패턴 상층부에 잔존하는 텅스텐 잔류물 등을 제거하려 하였으나, 이 경우 도 1f에 도시한 바와 같이 과다한 식각 (over etch)으로 인해 패턴 측면 (side wall)이나, 실리콘 기판 등이 손상 되는 문제점이 발생하였다.In order to solve this problem, a plasma etching process was further performed to remove tungsten residues remaining in the upper portion of the pattern, but in this case, as shown in FIG. 1F, the pattern side due to excessive etching (over etch) A problem arises in that a wall, a silicon substrate, etc. are damaged.
이에 본 발명자들은 상기와 같은 단점들을 극복하기 위한 연구를 하던 중 종래의 단점들을 극복하는 새로운 개념의 반도체 소자의 세정 방법을 발견하여 본 발명을 완성하였다.Accordingly, the present inventors have completed the present invention by discovering a method of cleaning a semiconductor device of a new concept overcoming the disadvantages of the prior art while studying to overcome the above disadvantages.
본 발명은 반도체 제조공정 중, 텅스텐을 하드 마스크로 사용하는 식각 공정에서 발생하는 텅스텐 잔류물과 입자들을 패턴과 기판에 영향을 미치지 않고 효과적으로 제거하기 위한 반도체 세정 방법을 제공하는 것을 목적으로 한다.An object of the present invention is to provide a semiconductor cleaning method for effectively removing tungsten residues and particles generated in an etching process using tungsten as a hard mask in a semiconductor manufacturing process without affecting a pattern and a substrate.
도 1a 내지 도 1f는 종래의 패턴 형성방법을 도시하는 단면도.1A to 1F are cross-sectional views showing a conventional method for forming a pattern.
도 2a 내지 도 2f는 본 발명의 패턴 형성방법을 도시하는 단면도.2A to 2F are sectional views showing the pattern forming method of the present invention.
< 도면의 주요 부분에 대한 간단한 설명 ><Brief description of the main parts of the drawing>
1, 111 : 실리콘 기판3, 113 : 폴리 실리콘 층1, 111: silicon substrate 3, 113: polysilicon layer
5, 115 : 텅스텐 실리콘 층 7, 117 : PE-질화막5, 115: tungsten silicon layer 7, 117: PE-nitride film
9, 119 : 텅스텐 하드 마스크 층11, 121 : ArF 포토레지스트9, 119: tungsten hard mask layer 11, 121: ArF photoresist
13 : 손상13: damage
상기 목적을 달성하기 위하여 본 발명에서는 NH4OH/H2O2의 혼합용액을 이용한 세정 방법을 제공한다.In order to achieve the above object, the present invention provides a cleaning method using a mixed solution of NH 4 OH / H 2 O 2 .
이하 본 발명을 상세히 설명하면 다음과 같다.Hereinafter, the present invention will be described in detail.
상기 세정 방법에서 사용되는 NH4OH/H2O2의 혼합 용액에는 물을 더 포함하는 것이 바람직하며, 이때 물은 증류수 또는 초순수를 사용한다.It is preferable that the mixed solution of NH 4 OH / H 2 O 2 used in the washing method further includes water, wherein water is distilled water or ultrapure water.
상기 혼합 용액은 NH4OH : H2O2: H2O는 부피비이며, 0.5∼1 : 1∼5 : 0∼50, 바람직하게는 0.5∼1 : 1∼4 : 15∼25, 더욱 바람직하게는 1 : 4 : 20 의 조성 비율로 혼합한다.In the mixed solution, NH 4 OH: H 2 O 2 : H 2 O is a volume ratio, 0.5 to 1: 1 to 5: 0 to 50, preferably 0.5 to 1: 1 to 4: 15 to 25, more preferably Mix at a composition ratio of 1: 4: 20.
상기 세정 방법은 형성된 금속 배선 패턴을 상기 혼합 용액에 침지하여 실시하거나, 상기 혼합 용액을 금속 배선 패턴에 분사 (spray)하는 방식으로 실시한다.The cleaning method may be performed by immersing the formed metal wiring pattern in the mixed solution or spraying the mixed solution on the metal wiring pattern.
세정 시 온도 및 시간 조건은 텅스텐 하드 마스크의 두께에 따라 적정 온도 및 시간을 계산해야 하는데, 상기 혼합 용액이 약 25℃ 조건에서 텅스텐에 대하여분당 100Å이상의 식각 비율을 가지므로, 용액의 온도가 약 15∼65℃, 바람직하게는 15∼45℃, 더욱 바람직하게는 25℃일 때 식각한다. 이때 식각 시간은 1∼30분 동안 수행되는 것이 바람직하다.The temperature and time conditions for cleaning should be calculated according to the thickness of the tungsten hard mask according to the thickness of the tungsten hard mask. Since the mixed solution has an etching rate of 100 kPa / min or more for tungsten at about 25 ° C, the temperature of the solution is about 15 It is etched when it is -65 degreeC, Preferably it is 15-45 degreeC, More preferably, it is 25 degreeC. At this time, the etching time is preferably performed for 1 to 30 minutes.
또한, 본 발명에서는 상기 혼합 용액을 이용하여In the present invention, the mixed solution is used.
반도체 기판 상에 폴리실리콘 층, 텅스텐-실리콘 층, PENIT 층, 텅스텐 층 및 포토레지스트 층이 순차적으로 형성된 금속 배선을 형성하는 단계;Forming a metal wiring in which a polysilicon layer, a tungsten-silicon layer, a PENIT layer, a tungsten layer, and a photoresist layer are sequentially formed on the semiconductor substrate;
상기 금속 배선에 대해 텅스텐 하드 마스크를 사용한 식각 공정을 수행하여 금속 배선 패턴을 형성하는 단계; 및Forming a metal wiring pattern by performing an etching process using a tungsten hard mask on the metal wiring; And
상기 식각 공정이 완료된 후, 상기 혼합 용액을 이용하여 형성된 패턴을 세정하는 단계를 포함함으로써, 패턴 상층 부에 잔존하는 텅스텐 하드 마스크를 완전히 제거하는 세정 방법을 제공한다.After the etching process is completed, the step of cleaning the pattern formed by using the mixed solution, thereby providing a cleaning method for completely removing the tungsten hard mask remaining in the upper portion of the pattern.
이하 본 발명을 첨부된 도면에 의거하여 상세히 설명하되, 반도체 소자의 공정 방법을 예를 들어 설명한다.BEST MODE Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
우선 도 2a에 도시된 바와 같이, 반도체 기판 즉, 실리콘 기판 (111) 상에 폴리 실리콘 층 (113), 텅스텐-실리콘 층 (115), PENIT 층 (117) 및 텅스텐 층 (119)을 순차적으로 증착하여 금속 배선을 형성한다. 그 후, 상기 텅스텐 층 (119) 상에 포토레지스트 층 (121)을 도포하고, 노광 공정 및 현상 공정을 이용하여 포토레지스트 패턴을 형성한다.First, as shown in FIG. 2A, a polysilicon layer 113, a tungsten-silicon layer 115, a PENIT layer 117, and a tungsten layer 119 are sequentially deposited on a semiconductor substrate, that is, a silicon substrate 111. To form a metal wiring. Thereafter, the photoresist layer 121 is coated on the tungsten layer 119, and a photoresist pattern is formed using an exposure process and a developing process.
도 2b에서 도시한 바와 같이 상기 포토레지스트 패턴을 마스크로 사용하여 상기 텅스텐 층 (119)을 염소계 플라즈마로 건식 식각하여 텅스텐 패턴을 형성한다.As shown in FIG. 2B, the tungsten layer 119 is dry-etched with a chlorine plasma using the photoresist pattern as a mask to form a tungsten pattern.
상기 염소계 플라즈마는 Cl3또는 BCl3기체를 이용하며, 첨가 가스로 Ar 또는 He 등의 불활성 가스를 혼합하여 사용하는 것이 바람직하다.The chlorine-based plasma uses a Cl 3 or BCl 3 gas, it is preferable to use a mixture of an inert gas such as Ar or He as an addition gas.
상기 텅스텐 하드 마스크 층 (119)은 후에 수행되는 식각 공정에 대하여 안정하다.The tungsten hard mask layer 119 is stable to the etching process performed later.
도 2c에서 도시한 바와 같이 상기 텅스텐 패턴을 하드 마스크로, 불소계 플라즈마를 이용한 건식 식각 공정으로 PENIT 층 (117)을 식각하여 PENIT 패턴을 형성한다.As illustrated in FIG. 2C, the PENIT layer 117 is etched using a tungsten pattern as a hard mask and a dry etching process using a fluorine-based plasma to form a PENIT pattern.
도 2d에서 도시한 바와 같이 상기 PENIT 패턴을 마스크로 텅스텐-실리콘 층 (115)을 식각하여 텅스텐-실리콘 패턴을 형성한다.As shown in FIG. 2D, the tungsten-silicon layer 115 is etched using the PENIT pattern as a mask to form a tungsten-silicon pattern.
상기 불소계 플라즈마는 CF4, C2F6, C4F8, NF3, SF6, C3F8, C4F6또는 C5F8기체를 이용하면서, 첨가 가스로 O2, Ar, He, Xe, N2등의 불활성 가스를 혼합하여 사용하는 것이 바람직하다.The fluorine-based plasma uses O 4 , C 2 F 6 , C 4 F 8 , NF 3 , SF 6 , C 3 F 8 , C 4 F 6 or C 5 F 8 gas, and adds O 2 , Ar, to use a mixture of an inert gas such as He, Xe, N 2 being preferred.
그 후, 상기 텅스텐-실리콘 패턴을 마스크로 폴리실리콘 층 (113)을 식각하여 폴리실리콘 패턴을 형성한다.Thereafter, the polysilicon layer 113 is etched using the tungsten-silicon pattern as a mask to form a polysilicon pattern.
이 때, 패턴의 측면과 실리콘 기판 등에 영향을 주지 않는 정도까지만 식각하면, 도 2e에서 도시한 바와 같이 식각 공정이 완료된 후에도, 형성된 패턴 상부에 텅스텐 잔류물 등이 잔존하므로, 이를 상기 혼합 용액을 이용한 세정 처리 공정으로 완전히 제거한다 (도 2f 참조).At this time, when etching only to the extent that does not affect the side of the pattern and the silicon substrate, even after the etching process is completed, as shown in FIG. Completely removed by the cleaning treatment process (see FIG. 2F).
상기 세정 공정은 15∼35℃ 온도에서 5∼30 분간 수행된다.The cleaning process is performed for 5 to 30 minutes at a temperature of 15 to 35 ℃.
이하 본 발명을 실시예에 의해 상세히 설명한다. 단 실시예는 발명을 예시하는 것일 뿐 본 발명이 하기 실시예에 의하여 한정되는 것은 아니다.Hereinafter, the present invention will be described in detail by way of examples. However, the examples are only to illustrate the invention and the present invention is not limited by the following examples.
I. 세정용 혼합 용액 제조I. Preparation of Cleaning Solution
제조예 1. NHPreparation Example 1 NH 44 OH/HOH / H 22 OO 22 를 포함하는 세정용 혼합 용액Cleaning solution containing
NH4OH 1000㎖, 및 H2O24000㎖ 를 25℃에서 교반하여 본 발명에 따른 포토레지스트 세정용 조성물을 제조하였다.1000 mL of NH 4 OH and 4000 mL of H 2 O 2 were stirred at 25 ° C. to prepare a photoresist cleaning composition according to the present invention.
제조예 2. NHPreparation Example 2 NH 44 OH/HOH / H 22 OO 22 /H/ H 22 O를 포함하는 세정용 혼합 용액Cleaning solution containing O
증류수 20000㎖, NH4OH 1000㎖, 및 H2O24000㎖를 25℃에서 교반하여 본 발명에 따른 포토레지스트 세정용 조성물을 제조하였다.20000 mL of distilled water, 1000 mL of NH 4 OH, and 4000 mL of H 2 O 2 were stirred at 25 ° C. to prepare a photoresist cleaning composition according to the present invention.
II. 포토레지스트 제거II. Photoresist Removal
실시예 1. NHExample 1. NH 44 OH/HOH / H 22 OO 22 를 포함하는 세정용 혼합 용액의 텅스텐 제거Tungsten removal of the cleaning solution comprising a
실리콘 기판 상에 폴리 실리콘 층, 텅스텐-실리콘 층, PENIT 층 및 텅스텐 층을 순차적으로 증착하여 금속 배선을 형성한 다음, 상기 텅스텐 층 상부에 AS 1020P ArF 포토레지스트 (clariant사) 층을 형성하였다.A polysilicon layer, a tungsten-silicon layer, a PENIT layer, and a tungsten layer were sequentially deposited on the silicon substrate to form a metal wiring, and then an AS 1020P ArF photoresist (clariant) layer was formed on the tungsten layer.
상기 각각의 층에 대한 식각 공정을 수행하여 패턴을 형성한 후, 상기 제조예 1의 25℃의 혼합 용액에 20분 동안 침지하여 패턴의 손상 없이 텅스텐을 완전히 제거하였다.After etching the respective layers to form a pattern, it was immersed in the mixed solution of 25 ℃ of Preparation Example 20 for 20 minutes to completely remove tungsten without damaging the pattern.
실시예 2. NHExample 2. NH 44 OH/HOH / H 22 OO 22 /H/ H 22 O를 포함하는 세정용 혼합 용액의 텅스텐 제거Tungsten Removal of Cleaning Mixed Solutions Containing O
상기 제조예 1의 혼합 용액 대신 상기 제조예 2의 혼합 용액을 사용하는 것을 제외하고는 실시예 1의 방법으로 수행하여 패턴의 손상 없이 텅스텐을 완전히 제거하였다.Except for using the mixed solution of Preparation Example 2 instead of the mixed solution of Preparation Example 1 was carried out by the method of Example 1 to completely remove the tungsten without damaging the pattern.
이상에서 살펴본 바와 같이, 본 발명에서는 주성분이 NH4OH/H2O2로 이루어진 혼합 용액을 이용한 세정 방법에 의해 공정 시간을 단축시킬 수 있을 뿐만 아니라, 과다 식각으로 발생할 수 있는 식각 프로파일 파괴를 방지하고, 패턴 측면과 실리콘 기판의 손상 없이 텅스텐 잔류물과 기타 식각 공정으로 발생한 입자 등을 효과적으로 제거할 수 있으므로, 반도체 소자의 전기적 특성 개선 및 반도체 소자의 수율 향상을 가져올 수 있다.As described above, in the present invention, not only the process time may be shortened by the cleaning method using a mixed solution composed of NH 4 OH / H 2 O 2 , but also the etching profile may be prevented from being excessively etched. In addition, since the tungsten residue and other particles generated by the etching process may be effectively removed without damaging the pattern side and the silicon substrate, the electrical characteristics of the semiconductor device and the yield of the semiconductor device may be improved.
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