KR20030088355A - 자기장 검출 센서 - Google Patents

자기장 검출 센서 Download PDF

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Publication number
KR20030088355A
KR20030088355A KR10-2003-0030080A KR20030030080A KR20030088355A KR 20030088355 A KR20030088355 A KR 20030088355A KR 20030030080 A KR20030030080 A KR 20030030080A KR 20030088355 A KR20030088355 A KR 20030088355A
Authority
KR
South Korea
Prior art keywords
magnetic
layer
sensor
ferromagnetic
magnetic field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR10-2003-0030080A
Other languages
English (en)
Korean (ko)
Inventor
샤르마매니쉬
페르너프레데릭
Original Assignee
휴렛-팩커드 디벨롭먼트 컴퍼니, 엘 피
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘 피 filed Critical 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘 피
Publication of KR20030088355A publication Critical patent/KR20030088355A/ko
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
KR10-2003-0030080A 2002-05-14 2003-05-13 자기장 검출 센서 Withdrawn KR20030088355A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/146,176 2002-05-14
US10/146,176 US20030214762A1 (en) 2002-05-14 2002-05-14 Magnetic field detection sensor

Publications (1)

Publication Number Publication Date
KR20030088355A true KR20030088355A (ko) 2003-11-19

Family

ID=29269749

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2003-0030080A Withdrawn KR20030088355A (ko) 2002-05-14 2003-05-13 자기장 검출 센서

Country Status (6)

Country Link
US (1) US20030214762A1 (enExample)
EP (1) EP1363134A3 (enExample)
JP (1) JP2004029007A (enExample)
KR (1) KR20030088355A (enExample)
CN (1) CN1487501A (enExample)
TW (1) TW200306431A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230045435A (ko) * 2021-09-28 2023-04-04 서울대학교산학협력단 상보형 센서 일체형 인터페이스 회로 및 상보형 센서 일체형 차동 인터페이스 회로

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JP2002198583A (ja) * 2000-12-26 2002-07-12 Hitachi Ltd 強磁性トンネル型磁気抵抗効果素子及び磁気ヘッド
JP4298691B2 (ja) 2005-09-30 2009-07-22 Ｔｄｋ株式会社 電流センサおよびその製造方法
DE102005060713B4 (de) 2005-12-19 2019-01-24 Austriamicrosystems Ag Magnetfeldsensoranordnung und Verfahren zur berührungslosen Messung eines Magnetfeldes
JP4361077B2 (ja) 2006-10-31 2009-11-11 Ｔｄｋ株式会社 磁気センサおよびその製造方法
WO2008059833A1 (en) * 2006-11-15 2008-05-22 Alps Electric Co., Ltd. Magnetic detector and electronic device
JP5006339B2 (ja) * 2006-12-20 2012-08-22 アルプス電気株式会社 磁気検出装置
US7715156B2 (en) * 2007-01-12 2010-05-11 Tdk Corporation Tunnel magnetoresistive effect element and thin-film magnetic head with tunnel magnetoresistive effect read head element
WO2008099662A1 (ja) * 2007-01-31 2008-08-21 Alps Electric Co., Ltd. 磁気検出装置
EP2112522A4 (en) * 2007-02-02 2011-03-16 Alps Electric Co Ltd MAGNETIC SENSOR AND METHOD FOR ITS MANUFACTURE
JP2010156543A (ja) * 2007-04-18 2010-07-15 Alps Electric Co Ltd 磁気検出装置
US20090059444A1 (en) * 2007-08-30 2009-03-05 Freescale Semiconductor, Inc. Methods and structures for an integrated two-axis magnetic field sensor
JP4780117B2 (ja) 2008-01-30 2011-09-28 日立金属株式会社 角度センサ、その製造方法及びそれを用いた角度検知装置
US8829901B2 (en) * 2011-11-04 2014-09-09 Honeywell International Inc. Method of using a magnetoresistive sensor in second harmonic detection mode for sensing weak magnetic fields
US8786987B2 (en) * 2012-04-27 2014-07-22 Seagate Technology Llc Biased two dimensional magnetic sensor
JP6083690B2 (ja) * 2012-05-11 2017-02-22 公立大学法人大阪市立大学 力率計測装置
US8991250B2 (en) * 2012-09-11 2015-03-31 The United States Of America As Represented By Secretary Of The Navy Tuning fork gyroscope time domain inertial sensor
US8953284B1 (en) * 2013-11-20 2015-02-10 HGST Netherlands B.V. Multi-read sensor having a narrow read gap structure
EP2963435B1 (en) * 2014-07-01 2017-01-25 Nxp B.V. Differential lateral magnetic field sensor system with offset cancelling and implemented using silicon-on-insulator technology
EP2966453B1 (en) * 2014-07-11 2018-10-31 Crocus Technology MLU based accelerometer using a magnetic tunnel junction
DE102014011245B3 (de) * 2014-08-01 2015-06-11 Micronas Gmbh Magnetfeldmessvorrichtung
US10809320B2 (en) 2015-04-29 2020-10-20 Everspin Technologies, Inc. Magnetic field sensor with increased SNR
DE102015007190B4 (de) * 2015-06-09 2017-03-02 Micronas Gmbh Magnetfeldmessvorrichtung
US10128311B2 (en) * 2017-03-17 2018-11-13 Toshiba Memory Corporation Magnetic memory device
US11574758B2 (en) * 2021-05-07 2023-02-07 Globalfoundries Singapore Pte. Ltd. Magnetic field sensor using different magnetic tunneling junction (MTJ) structures

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5751521A (en) * 1996-09-23 1998-05-12 International Business Machines Corporation Differential spin valve sensor structure
US5737157A (en) * 1996-10-09 1998-04-07 International Business Machines Corporation Disk drive with a thermal asperity reduction circuitry using a magnetoresistive sensor
US5748399A (en) * 1997-05-13 1998-05-05 International Business Machines Corporation Resettable symmetric spin valve
JP2002522866A (ja) * 1998-08-14 2002-07-23 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ スピントンネル接合素子を具える磁界センサ
US6259586B1 (en) * 1999-09-02 2001-07-10 International Business Machines Corporation Magnetic tunnel junction sensor with AP-coupled free layer
US6469926B1 (en) * 2000-03-22 2002-10-22 Motorola, Inc. Magnetic element with an improved magnetoresistance ratio and fabricating method thereof
US6607924B2 (en) * 2000-04-28 2003-08-19 Hewlett-Packard Company Solid-state memory with magnetic storage cells

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230045435A (ko) * 2021-09-28 2023-04-04 서울대학교산학협력단 상보형 센서 일체형 인터페이스 회로 및 상보형 센서 일체형 차동 인터페이스 회로
US12372495B2 (en) 2021-09-28 2025-07-29 Seoul National University R&Db Foundation Interface circuit and differential interface circuit with integrated complementary sensors

Also Published As

Publication number Publication date
US20030214762A1 (en) 2003-11-20
CN1487501A (zh) 2004-04-07
EP1363134A2 (en) 2003-11-19
TW200306431A (en) 2003-11-16
EP1363134A3 (en) 2005-04-27
JP2004029007A (ja) 2004-01-29

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Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20030513

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid