KR20030083503A - High frequency semiconductor device - Google Patents

Abstract

PURPOSE: A high frequency semiconductor device is provided to be capable of restraining performance deterioration due to the nonconducting characteristic of a silicon substrate for reducing the loss of signal transmission. CONSTITUTION: A high frequency semiconductor device is provided with an insulating substrate(100), a passive element part(102) formed at the first predetermined upper portion of the insulating substrate and a coaxial structure signal transmitting line(150) formed at the second predetermined upper portion of the insulating substrate. At this time, the signal transmitting line includes a signal line(140) connected with the passive element part, a support part for supporting the signal line from the insulating substrate, and a shielding part spaced apart from the lower, upper and lateral portion of the signal line. The high frequency semiconductor device further includes an input/output part(155) formed at the outer portion of the shielding part for inputting and outputting an electric signal.

Description

High frequency semiconductor device

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high frequency semiconductor device, and more particularly, to a high frequency semiconductor device using an insulating substrate in order to prevent performance degradation due to semi-conducting characteristics of a silicon substrate.

As the need for rapid information exchange increases, the wireless mobile communication system market is rapidly expanding. The high frequency semiconductor device, which is the core of the mobile communication technology, refers to a semiconductor device manufactured by using a semiconductor process among high frequency devices used in a high frequency system capable of high-speed processing of a high frequency band signal of GHz or more. In the past, passive elements, single components, and the like have been used to implement a high frequency wireless communication device or circuit. However, there is a tendency to increase the use of devices using semiconductor technology due to problems in reliability at high frequencies.

In general, the RF block of the terminal for wireless communication by function includes active components such as low noise amplifier (LNA), down frequency mixer, intermediate frequency amplifier, up frequency mixer, driving amplifier, power amplifier, frequency synthesizer and passive components. It consists of a duplexer and two bandpass filter components. Here, a low noise amplifier, a downlink frequency mixer, an intermediate frequency amplifier, etc. are bundled together as a receiver module, and an uplink frequency mixer, a driving amplifier, etc. are bundled together and called a transmitter module. Integrating the receiver module and the transmitter module becomes a transceiver.

As with other basic circuits, transceivers aim to achieve low noise, wideband, low power, low signal loss, and high speed. In general, silicon substrates have advantages in that they are inexpensive, superior in thermal conductivity, and stable in manufacturing process compared to compound semiconductor substrates, which are advantageous for mass production. However, the electron mobility of the silicon substrate is much lower than that of compound semiconductor substrates such as GaAs, and due to the inversion characteristics of the silicon substrate, there is a large signal loss and signal leakage by parasitic capacitors in the ultrahigh frequency region. For this reason, it is difficult to produce a high frequency transmission line on a silicon substrate and it is difficult to obtain a high speed operating characteristic.

Therefore, in order to prevent signal loss due to the inversion characteristics of the silicon substrate, the conventional high frequency integrated circuit has been very expensive in realizing a compound semiconductor substrate such as GaAs, which is expensive not only for active devices but also for passive devices.

On the other hand, each of the transmitter module and the transmitter module is composed of a combination of an appropriate passive element and an active element. The combined active element and the passive element constitute a functional circuit unit, and each functional circuit unit constitutes an entire module by being coupled to each other along a signal transmission line on a substrate. Therefore, a process for electrically connecting the active element portion and the passive element portion and a process of combining them with a signal transmission line are required in the manufacturing process of a high frequency semiconductor element such as a transceiver. Being able to perform this integration process simply and efficiently will increase productivity.

SUMMARY OF THE INVENTION The present invention has been made in an effort to provide a high performance high frequency semiconductor device having a low signal transmission loss, a small overall area, and a low cost due to suppression of performance degradation due to the semiconductivity of a silicon substrate.

Another object of the present invention is to provide a high frequency semiconductor device having a structure capable of easily performing a process of combining an active device, a passive device, and a signal transmission line.

1 schematically illustrates a side of a high frequency semiconductor device according to a first embodiment of the present invention.

FIG. 2A is a perspective view of the coaxial signal transmission line included in FIG. 1, FIG. 2B is a cross-sectional view taken along line BB ′ of FIG. 2A, and FIG. 2C is a cross-sectional view taken along line C-C ′ of FIG. 2A.

3 is an exploded perspective view illustrating a coaxial signal transmission line, an input / output unit, and a ground bump included in the high frequency semiconductor device of FIG. 1.

4 schematically illustrates a side of a high frequency semiconductor device according to a second embodiment of the present invention.

5A and 5B illustrate examples of band pass filters that may be included in the high frequency semiconductor device of FIG. 4.

6 to 9 schematically illustrate side surfaces of each of the high frequency semiconductor devices according to the third to sixth embodiments of the present invention.

10A to 10F are diagrams for explaining a method of simultaneously manufacturing a signal transmission line, an input / output unit, and a ground bump according to a seventh embodiment of the present invention.

* Description of the symbols for the main parts of the drawings *

100: insulating substrate, 102: passive element portion, 110: ground wire, 130: shielding means, 134: support means, 140: signal line, 150: signal transmission line, 155: input and output unit, 160: ground bump, 160: filter shielding means 165: filter wire support means, 170: filter wire, 180: band pass filter, 190: active element portion, 195: pad, 200: package or circuit board.

The high frequency semiconductor device according to the present invention for achieving the above technical problem includes a passive element portion formed on an insulating substrate, a signal transmission line and an input / output unit of a coaxial structure. The signal transmission line includes a signal line connected to the passive element portion, support means for supporting the signal line from the insulating substrate, and shielding means spaced apart by a predetermined distance from the lower portion, the side portion, and the upper portion of the signal line. The input / output unit is formed outside the shielding means on one end of the signal line.

The passive element unit includes at least one of a resistor, an inductor, and a capacitor. The insulating substrate is preferably a glass, a high resistance silicon (HRS), or a silicon substrate having an insulating film formed thereon. The insulating film may be an oxidized porous silicon (Oxidized Porous Silicon) film having a thickness of 10 μm or more. Furthermore, a buffer layer may be further included on the oxidized porous silicon film. As the buffer layer, a silicon nitride film, a benzocyclobutene film, a polyimide, a TEOS-oxide film, an SOG film, a USG film, a BSG film, or a BPSG film may be formed.

A ground bump connected to the outside may be further provided on the shielding means existing under the signal line. The active element may be electrically connected to the ground bump and the input / output unit. Here, the active device unit includes at least one transistor.

The active element unit is formed on a substrate separate from the insulating substrate, and includes an electrical signal input / output pad for electrical connection, and the electrical signal input / output pad and the input / output unit are connected by a flip chip bonding method or connected by a wire bonding method. do. Here, the separate substrate may be a compound semiconductor substrate of group III-V or group II-VI elements.

Meanwhile, the high frequency semiconductor device according to the present invention may further include a band pass filter. The band pass filter may be in the form of edge coupling or broadside coupling. The band pass filter has a coaxial band including a filter wire, filter wire support means for supporting the filter wire from the insulating substrate, and filter shielding means spaced apart from each other by a predetermined distance on the bottom, side, and top of the filter wire. It is preferable that it is a pass filter. At this time, the filter input and output unit formed on the outside of the shielding means on one end of the filter line may be further included. In this case, the active element may be electrically connected to the filter input / output unit.

The above structures may be electrically connected to the package substrate or the circuit board. For example, a bonding wire may be electrically connected between the package or the circuit board and the input / output unit. Instead of a bonding wire, a bump may be interposed between the package or the circuit board and the input / output unit.

According to the present invention, the production cost is reduced by using a silicon-based substrate which is inexpensive for the passive element portion, and a compound semiconductor substrate is used for the active element portion to ensure the performance of the active element requiring high-speed operation. In addition, by forming an oxidized porous silicon film or an oxidized porous silicon film and a buffer layer, it is possible to further suppress performance degradation due to the semiconducting property of the silicon substrate.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, embodiments of the present invention may be modified in many different forms, and the scope of the present invention should not be construed as being limited to the embodiments described below.

First embodiment

1 schematically illustrates a side of a high frequency semiconductor device according to a first embodiment of the present invention.

Referring to FIG. 1, a passive element portion 102 is formed on an insulating substrate 100. The insulating substrate 100 is made of glass or high resistance silicon (HRS), and the passive element unit 102 includes at least one of a resistor, an inductor, and a capacitor. Although shown as one passive element part for convenience, the passive substrate 100 may have a plurality of passive element parts formed on a plane. The passive element unit 102 is connected to the signal transmission line 150 of the coaxial structure.

FIG. 2A is a perspective view of the coaxial signal transmission line 150 included in FIG. 1, FIG. 2B is a cross-sectional view taken along line B-B 'of FIG. 2A, and FIG. 2C is a cross-sectional view taken along line C-C' of FIG. 2A. As shown in FIGS. 2A to 2C, the signal transmission line 150 includes a signal line 140 connected to the passive element unit 102, support means 134 for supporting the signal line 140 from the insulating substrate 100, and The shielding means 130 is spaced apart from the signal line 140 by a predetermined interval on the bottom, side, and the top. Holes 139 may be provided on the shielding means 130. The shielding means 130 includes a ground line 110, an upper ground line 128, and ground outer walls 126 and 127, and surrounds the signal line 140 with a predetermined space. At this time, air enters the space, and signal loss is reduced. That is, since the signal loss due to parasitic capacitance is minimized because the dielectric constant is filled between the signal line and the shielding means, the signal transmission performance of the signal line is improved.

The ground line 110 is formed of a metal material, for example, copper (Cu), on the insulating substrate 100. At this time, the ground line 110 is not continuous and partially exposes the top surface of the insulating substrate 100. Support means 134 made of a metal material is formed on the surface of the insulating substrate 100 exposed by the ground line 110. The signal line 140 for transmitting a signal is formed on the support means 134. At this time, the support means 134 need not be formed continuously under the signal line 140, and it is preferable that the support means 134 is formed while maintaining an interval sufficient to support the signal line 140 as shown in FIG.

Ground outer walls 126 and 127 are formed on the ground line 110, and are substantially perpendicular to the ground line 110, respectively. An upper ground line 128 is formed on the ground outer walls 126 and 127, and the upper ground line 128 electrically connects the ground outer walls 126 and 127. Preferably, the upper ground wire 128 and the ground outer walls 126 and 127 are made of metal.

3 is an exploded perspective view of a portion of the signal transmission line 150 and is shown without the upper ground line 128. 1 and 3, the input / output unit 155 is formed outside the shielding means 130 on at least one end of the signal line 140. In addition, shielding means existing under the signal line 140, that is, ground bumps 160 connected to the outside are formed on both sides of the input / output unit 155. A post 135 may be provided below the input / output unit 155.

Some of the input / output units 155 are electrically connected to the active element unit 190. Some of the ground bumps 160 may also be electrically connected to the active element unit 190. The active element unit 190 is formed on a substrate separate from the insulating substrate 100, and is formed on a compound semiconductor substrate of, for example, a group III-V or group II-VI element. As shown in FIG. 3, the active element unit 190 includes an electrical signal input / output pad 195 for electrical connection. In this embodiment, the electrical signal input / output pad 195 and the input / output unit 155 are flip chip bonded. Is connected in a way. Therefore, the input / output unit 155 is also used as a connection bump for flip chip bonding. Because of the flip chip method, the overall device size can be reduced, which is advantageous for integration. However, the electric signal input / output pad 195 and the input / output unit 155 of the active element unit 190 may be connected by a wire bonding method.

In the present embodiment, if the passive element unit 102 and the active element unit 190 are appropriately selected and combined, each of the transmitter module and the transmitter module may be implemented, or they may be combined to implement the transceiver. However, the active element unit 190 can be used as an assembly of unit passive elements even without coupling.

As described above, according to the present embodiment, since the silicon-based substrate which is cheaper than the compound semiconductor substrate is used as the insulating substrate, the substrate cost is low. In addition, the use of a highly insulating substrate can reduce the signal loss generated during high frequency signal transmission. Adopting a coaxial signal line, it can be easily connected to other signal lines on an insulating substrate. In addition, it has excellent signal transmission capability even in the ultra high frequency range. That is, the dielectric loss from the substrate can be reduced by separating the signal line from the substrate, and the signal line can be shielded with a metal so as to be free from the influence of noise from the outside. Therefore, a high performance high frequency semiconductor device can be implemented at low cost.

Second embodiment

4 schematically illustrates a side of a high frequency semiconductor device according to a second embodiment of the present invention. This embodiment is substantially the same as the first embodiment, but further includes a band pass filter 180. Hereinafter, the differences from the first embodiment will be mainly described.

As shown in FIG. 4, a band pass filter 180 is also formed on the ground line 110 on the insulating substrate 100. The band pass filter 180 is formed in the same coaxial structure as the signal transmission line 150. That is, the filter wires 170 and the filter wire support means 165 for supporting the filter wires 170 from the insulating substrate 100 and the filter wires 170 are spaced apart from each other at predetermined intervals. Filter shielding means (160). The drawings are intended to be as simple as possible to represent the concept of being connected.

The filter input / output unit 185 may be formed outside the filter shielding means 160 on at least one end of the filter line 170. The filter input / output unit 185 may be electrically connected to the active element unit 190. As shown in FIG. 3, the active element unit 190 includes an electrical signal input / output pad 195 for electrical connection, and in this embodiment, the electrical signal input / output pad 195 and the filter input / output unit 185 are flipped. It is connected by a chip bonding method. Therefore, the filter input / output unit 185 is also used as a connection bump for flip chip bonding. However, the electric signal input / output pad 195 and the filter input / output unit 185 may be connected by a wire bonding method.

5A and 5B illustrate examples of band pass filters that may be included in FIG. 4, without shielding means present thereon, respectively.

First, FIG. 5A is a perspective view of a band pass filter in the form of edge coupling. Similar to the signal transfer line 150, the band pass filter also includes filter line support means 165 for supporting the filter line 170 and the filter line 170 from the insulating substrate 100, and the lower portion of the filter line 170. The side, and the coaxial structure including a shielding means 160 which is present at a predetermined interval spaced apart. First, the ground line 110 is formed on the insulating substrate 100. On the exposed surface of the insulating substrate 100, filter wire support means 165 made of a metal material is formed. The filter wire 170 is formed on the filter wire support means 165. At this time, the filter wire support means 165 is formed while maintaining a gap enough to support the filter wire 170.

The filter ground outer walls 156 and 157 are formed on the ground line 110 substantially perpendicularly to the ground line 110, respectively. A filter upper ground line (not shown) is formed on the filter ground outer walls 156 and 157. The filter upper ground wire electrically connects the filter ground outer walls 156 and 157. The grounding wire 110, the filter upper grounding wire, and the filter grounding outer walls 156 and 157 surround the filter wire 170 with a predetermined space to provide a filter shielding means 160 that electrically shields the filter wire 170. Configure. Although not shown, a filter input / output unit 185 may be formed outside the filter shielding means 160 on at least one end of the filter wire 170, that is, shielding means existing under the filter wire 170. The ground wire 110 may further include a filter ground bump connected to the outside.

FIG. 5B is a top view of a band pass filter in the form of broadside coupling. FIG. Like the signal transmission line 150, the band pass filter also has a coaxial structure including a filter line 170, filter line support means (not shown), and filter shielding means 160.

Third embodiment

6 is a schematic side view of a high frequency semiconductor device according to a third embodiment of the present invention. This embodiment is substantially the same as the second embodiment, but the type of the insulating substrate on which the passive element unit 102 and the signal transmission line 150 are integrated is different from the second embodiment. The following describes only differences from the second embodiment.

The insulating substrate 107 in this embodiment is a silicon substrate 102 on which oxidized porous silicon (OxidizedPorous Silicon) 105 is formed. Here, the oxidized porous silicon film 105 is formed to a thickness of 10 μm or more, for example, 20 μm or more, so that the insulating property of the silicon substrate 102 can be negligible.

In general, a technique of forming an oxide film on a silicon substrate is a method of allowing oxygen atoms to penetrate into the silicon substrate to be substituted with silicon atoms. However, in this method, when the surface of the substrate is oxidized to some extent, it is difficult to form an oxide film having a thickness of 10 μm or more because oxygen atoms are difficult to penetrate deeply, for example, around 10 μm or more. As a high temperature oxide film forming method performed at a high temperature of 1000 ° C. or more, which has the best oxide film forming ability, an oxide film forming process should be performed for at least 10 hours to obtain an oxide film having a thickness of 10 μm. In order to obtain an oxide film of 20 μm or more proposed in the present invention, it is estimated that a high temperature oxidation process should be performed for several days or more for at least one month.

In this embodiment, since the silicon substrate 102 is used, the substrate cost is low. In addition, since the thick oxidized porous silicon film 105 is excellent in insulation, it is possible to reduce signal loss generated during high frequency signal transmission.

Fourth embodiment

7 schematically illustrates a side of a high frequency semiconductor device according to a fourth embodiment of the present invention. This embodiment is substantially the same as the third embodiment, in particular, a buffer layer 109 is further formed on the oxidized porous silicon film 105.

The buffer layer 109 is formed to compensate for the nonuniformity of the surface of the oxidized porous silicon film 105. As long as the insulating material can have a uniform surface, any material film can be used. For example, a silicon nitride film can be formed at about 5 mu m. As the buffer layer 109, a benzocyclobutene film, a polyimide, a TEOS-oxide film, an SOG film, a USG film, a BSG film, or a BPSG film can be formed in addition to the silicon nitride film.

Fifth Embodiment

The structures shown in FIGS. 1, 4, 6, and 7, respectively, may be electrically connected to the package substrate or the circuit board by a wire bonding method. FIG. 8 is a schematic side view of a high frequency semiconductor device according to a fifth embodiment of the present invention. For example, the structure shown in FIG. 4 is connected to a package substrate or a circuit board by a wire bonding method.

Referring to FIG. 8, the structure shown in FIG. 4 is mounted on a package or a circuit board 200, and the input / output unit 155 and the filter input / output unit 185 which are not connected to the active element unit 190 are packaged or The bonding wire 210 is connected to the circuit board 200. As the package or circuit board 200, an organic insulating substrate such as FR-4, GETEK, or PCB may be used. Reference numeral 205 denotes a bonding pad formed on the package or circuit board 200.

Sixth embodiment

The structures shown in FIGS. 1, 4, 6, and 7, respectively, may be electrically connected to a package or a circuit board by a flip chip bonding method. FIG. 9 schematically illustrates a side of a high frequency semiconductor device according to a sixth embodiment of the present invention. For example, the structure shown in FIG. 4 is connected to a package or a circuit board by a flip chip bonding method.

Referring to FIG. 9, the structure illustrated in FIG. 4 is inverted on the package or the circuit board 200, and is electrically connected through the flip chip connection bumps 215. The flip chip connection bump 215 may include a filter input / output unit between the input / output unit 155 which is not connected to the active element unit 190 and the package or circuit board 200, and which is not connected to the active element unit 190 ( Interposed between 185 and package or circuit board 200.

Seventh embodiment

In order to facilitate understanding of the high frequency semiconductor device according to the present invention, a method of manufacturing the high frequency semiconductor device according to the first embodiment will be described.

Referring back to FIG. 1, the passive element portion 102 is formed on the insulating substrate 100, and a signal transmission line 150 having a coaxial structure is formed. The signal transmission line 150 having a coaxial structure includes a signal line 140 connected to the passive element unit 102, support means 135 for supporting the signal line 140 from the insulating substrate 100, and a signal line 140 of the signal line 140. It is formed to include a shielding means 130 which is spaced apart at a predetermined interval on the bottom, side, and the top. Simultaneously with forming the signal transmission line 150, the input / output unit 155 is formed outside the shielding means 130 on at least one end of the signal line 140. At the same time, the ground bump 160 may be formed on one side of each input / output unit 155 on the lower shielding means of the signal line 140.

By being combined with the passive element unit 102 to form an active element unit 190 constituting a functional circuit unit, and then the active element unit 190 is electrically connected to some of the input and output unit 155. In this case, the active element unit 190 is formed to include an electrical signal input / output pad 195 for electrical connection to a substrate separate from the insulating substrate 100. Then, the step of electrically connecting the active element unit 190 with the input / output unit 155 may be performed by connecting the electrical signal input / output pad 195 and the input / output unit 155 by a flip chip bonding method or a wire bonding method. Can be.

Hereinafter, a method of simultaneously manufacturing the signal transmission line 150, the input / output unit 155, and the ground bump 160 will be described in detail with reference to FIGS. 10A to 10F. 10A to 10F, (a) shows the front view of the signal transmission line 150 of FIG. 2A, and (b) shows a cross section of the input / output unit 155 cut perpendicular to the signal line 140. (c) shows a cross section of the ground bump 160, and (d) shows the signal transmission line 150 of FIG. 2A from the ground outer wall 126 side.

First, as shown in FIG. 10A, a ground line 110 having a thickness of about 2000 mW is formed on the insulating substrate 100. There are two ways to do this.

As a first method, a grounding metal layer, such as copper, is vacuum deposited on the entire surface of the insulating substrate 100. Subsequently, a photoresist defining a ground line pattern is formed on the ground metal layer. When the ground metal layer is etched using the photoresist as a mask and then the photoresist is removed, the ground line 110 remains on the insulating substrate 100.

As a second method, a metal seed layer is formed on the entire surface of the insulating substrate 100 to facilitate plating. A photoresist having an opening defining a ground line pattern is formed on the metal seed layer. Plating is performed to fill the opening metal layer in the opening, and then the photoresist and the exposed metal seed layer are removed. Then, the ground line 110 remains on the insulating substrate 100.

Referring to FIG. 10B, the first photoresist PR1 is formed on the insulating substrate 100 including the ground line 110. The first photoresist PR1 includes a pair of parallel first openings 301 and second openings 302, third openings 303, and third openings between the first and second openings 301 and 302. The fourth opening 304 and the fifth opening 305 are disposed on at least one side of the fourth opening 304 and the fourth opening 304 that are retracted from the first and second openings 301 and 302 on the coaxial with the 303.

Next, plating is performed to fill the first to fifth openings 301, 302, 303, 304, and 305 to form the first to fifth metal layers 126a, 127a, 134, 135, and 160a separated from each other. . For example, about 12 micrometers of copper are plated. In this case, the first and second metal layers 126a and 127a are for forming the ground outer walls 126 and 127 of FIG. 2A, respectively, and the third metal layer 134 serves as a supporting means. The fourth metal layer 135 serves as a post for supporting the input / output unit 155. The fifth metal layer 160a is for the ground bumps 160.

Referring to FIG. 10C, the sixth and seventh openings 306 and 307 and the third and fourth metal layers 134 and 135 exposing the first and second metal layers 126a and 127a, respectively, on the resultant of FIG. 10B. ) And a second photoresist PR2 having an eighth opening 308 exposing the first photoresist PR1 therebetween and a ninth opening 309 exposing the fifth metal layer 160a.

Plating is performed to fill the sixth to ninth openings 306, 307, 308, and 309 to form sixth to ninth metal layers 126b, 127b, 140, and 160b separated from each other. For example, about 12 micrometers of copper are plated. Here, the sixth and seventh metal layers 126b and 127b are also for forming the ground outer walls 126 and 127, and the eighth metal layer 140 serves as a signal line for transmitting signals. The ninth metal layer 160b is also for the ground bumps 160.

Next, referring to FIG. 10D, the tenth and eleventh openings 310 and 311 and the eighth metal layer 140 exposing the sixth and seventh metal layers 126b and 127b, respectively, may be formed on the resultant of FIG. 10C. A third photoresist PR3 having a twelfth opening 312 exposing only a portion corresponding to the fourth metal layer 135 and a thirteenth opening 313 exposing the ninth metal layer 160b is formed.

Plating is performed to fill the tenth to thirteenth openings 310, 311, 312, and 313 to form tenth to thirteenth metal layers 126c, 127c, 155a, and 160c separated from each other. For example, about 12 micrometers of copper are plated. Here, the tenth and eleventh metal layers 126c and 127c are for forming the ground outer walls 126 and 127, respectively, and the twelfth metal layer 155a is for the input / output unit 155. The thirteenth metal layer 160c is also for the ground bumps 160.

Referring to FIG. 10E, on the resultant of FIG. 10D, a fourteenth opening 314 for connecting the tenth and eleventh metal layers 126c and 127c and a fifteenth opening 315 for exposing the twelfth metal layer 155a are exposed. The fourth photoresist PR4 having the sixteenth opening 316 exposing the thirteenth metal layer 160c is formed.

The plating is performed to fill the fourteenth to sixteenth openings 314, 315, and 316 to form the fourteenth to sixteenth metal layers 128, 155b, and 160d separated from each other. For example, nickel is plated at about 2 μm, and then gold is plated at about 5 μm. Here, the fourteenth metal layer 128 is for forming the upper ground line of FIG. 2A, and the fifteenth metal layer 155b is for the input / output unit 155. The sixteenth metal layer 160d is also for the ground bumps 160.

As shown in FIG. 10F, the first to fourth photoresists PR1, PR2, PR3, and PR4 are removed. The fourteenth metal layer 128 may be formed to have an open portion thereon, and the first to fourth photoresist PR1, PR2, PR3, and PR4 may be opened as well as the open portions before and after the signal line. It is also effectively removed through the portion that has been made. It is desirable that the size of the open portion be considerably smaller than the wavelength transmitted to the signal line.

According to the above method, the eighth metal layer 140 becomes a signal line, the third metal layer 134 becomes a support means for supporting the signal line, and the first, sixth and tenth metal layers 126a, 126b, and 126c are grounded. It becomes the outer wall 126, and the 2nd, 7th, and 11th metal layers 127a, 127b, and 127c become the ground outer wall 127. FIG. The fourteenth metal layer 128 is an upper ground line, and is electrically connected to the first, sixth, and tenth metal layers 126a, 126b, and 126c and the second, seventh, and eleventh metal layers 127a, 127b, and 127c. 8 shields the metal layer 140. The twelfth and fifteenth metal layers 115a and 115b are input / output units, and the fifth, ninth, thirteenth and sixteenth metal layers 160a, 160b, 160c, and 160d are electrically connected to be ground bumps.

Eighth embodiment

A method of manufacturing the high frequency semiconductor device according to the fourth embodiment will be described.

This embodiment is substantially the same as the seventh embodiment, and the band pass filter 180 is formed on the insulating substrate 100 at the same time as the signal transmission line 150 is formed. For example, the filter wire support means 165 is formed while the support means 134 is formed. The filter line 170 is formed while the signal line 140 is formed. The filter shielding means 160 is formed while the shielding means 130 is formed. The filter input / output unit 185 and the filter ground bump (not shown) are formed while the input / output units 155 and the ground bumps 160 of the signal transmission line 150 are formed.

As such, when the coaxial structure of the signal transmission line 150 is formed and the coaxial band pass filter 180 is formed, the overall process is simple and efficient. That is, the high frequency semiconductor device according to the present invention can be easily integrated by adopting a coaxial structure of signal transmission lines and filters.

Although the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments, and various other changes and modifications are possible.

The present invention uses a silicon-based substrate that is cheaper than a GaAs substrate, thereby reducing production costs. In addition, the use of a highly insulating substrate can reduce the signal loss generated during high frequency signal transmission. Adopting a coaxial signal line, it can be easily connected to other signal lines on the substrate. In addition, it has excellent signal transmission capability even in the ultra high frequency range.

In addition, when bonding the active device unit using a flip chip bonding method, the total area of the device may be reduced. This is advantageous for integration. Due to the small size, it can gradually meet the trend of miniaturization in the case of mobile phones. In addition, as the chip size decreases, the number of chips produced in one wafer increases, thereby reducing the process cost. Therefore, it is important to reduce the size of the chip even in view of the production cost.

When wiring with a coaxial signal transmission line, since the input / output unit and ground bumps for flip chip bonding or wire bonding can be simultaneously formed with the signal transmission line, the process is simple and efficient. In the case of further forming the band pass filter, if a concept of the coaxial structure such as the signal transmission line is formed, the band pass filter may be performed simultaneously with the step of forming the signal transmission line.

Therefore, according to the present invention, a high performance high frequency semiconductor device having a small signal transmission loss, a small total area, and a low cost can be realized. In addition, high-performance high-frequency semiconductor devices can be manufactured more simply and efficiently.

Claims (16)

A passive element portion formed on the insulating substrate; A signal line connected to the passive element portion, support means for supporting the signal line from the insulating substrate, and shielding means spaced apart from each other by a predetermined distance on the lower portion, the side portion, and the upper portion of the signal line. Coaxial signal transmission line; And And an input / output unit formed outside the upper shielding means on one end of the signal line to input and output an electrical signal. The high frequency semiconductor device of claim 1, wherein the passive device comprises at least one of a resistor, an inductor, and a capacitor. The high frequency semiconductor device of claim 1, wherein the insulating substrate is a silicon substrate having a glass, a high resistivity silicon (HRS), or an insulating film formed thereon. 4. The high frequency semiconductor device of claim 3, wherein the insulating film is an oxidized porous silicon film having a thickness of 10 µm or more. The buffer layer of claim 4, wherein the buffer layer is selected from a silicon nitride film, a benzocyclobutene film, a polyimide, a TEOS-oxide film, an SOG film, a USG film, a BSG film, or a BPSG film on the oxidized porous silicon film. High frequency semiconductor device, characterized in that it further comprises. The high frequency semiconductor device according to claim 1, wherein the shielding means is metal. The high frequency semiconductor device as claimed in claim 1, further comprising a ground bump connected to the outside on a shielding means existing under the signal line. 8. The high frequency semiconductor device of claim 7, further comprising an active device unit electrically connected to the ground bump and the input / output unit. The high frequency semiconductor device of claim 8, wherein the active device unit comprises at least one transistor. 10. The method of claim 9, wherein the active element is formed on a substrate separate from the insulating substrate, and includes an electrical signal input and output pad, the electrical signal input and output pad and the input and output unit is connected by a flip chip bonding method. High frequency semiconductor element. 10. The method of claim 9, wherein the active element is formed on a separate substrate from the insulating substrate, and includes an electrical signal input and output pad, the electrical signal input and output pad and the input and output unit is connected by a wire bonding method. High frequency semiconductor device. The method according to claim 10 or 11, wherein Package or circuit board; And And a bonding wire electrically connecting the input / output unit and the package or the circuit board. The method according to claim 10 or 11, wherein Package or circuit board; And And a bump electrically connecting the input / output unit and the package or the circuit board by a flip chip bonding method. The high frequency semiconductor device of claim 1, further comprising a band pass filter in the form of edge coupling or broadside coupling formed on the insulating substrate. 15. The filter of claim 14, wherein the band pass filter is provided with a filter line through which an electric signal is transmitted, filter line support means for supporting the filter line from the insulating substrate, and spaced apart from the filter line by a predetermined distance. A high frequency semiconductor device, characterized in that the bandpass filter of the coaxial structure including a filter shielding means. The high frequency semiconductor device as claimed in claim 15, further comprising a filter input / output unit formed outside the shielding means on one end of the filter line.