KR20030075185A - 마이크로 전자 소자를 세정하는 방법 - Google Patents
마이크로 전자 소자를 세정하는 방법 Download PDFInfo
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- KR20030075185A KR20030075185A KR10-2003-7010495A KR20037010495A KR20030075185A KR 20030075185 A KR20030075185 A KR 20030075185A KR 20037010495 A KR20037010495 A KR 20037010495A KR 20030075185 A KR20030075185 A KR 20030075185A
- Authority
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- South Korea
- Prior art keywords
- cleaning composition
- composition
- carbon dioxide
- liquid
- supercritical
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 196
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- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims abstract description 246
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- PSZYNBSKGUBXEH-UHFFFAOYSA-N naphthalene-1-sulfonic acid Chemical class C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1 PSZYNBSKGUBXEH-UHFFFAOYSA-N 0.000 description 1
- UFWIBTONFRDIAS-UHFFFAOYSA-N naphthalene-acid Natural products C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 238000012354 overpressurization Methods 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 229940083254 peripheral vasodilators imidazoline derivative Drugs 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 150000003014 phosphoric acid esters Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920001282 polysaccharide Polymers 0.000 description 1
- 239000005017 polysaccharide Substances 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 102000004169 proteins and genes Human genes 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 238000007761 roller coating Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- FSYKKLYZXJSNPZ-UHFFFAOYSA-N sarcosine Chemical class C[NH2+]CC([O-])=O FSYKKLYZXJSNPZ-UHFFFAOYSA-N 0.000 description 1
- 239000011555 saturated liquid Substances 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 235000019795 sodium metasilicate Nutrition 0.000 description 1
- 239000002195 soluble material Substances 0.000 description 1
- 239000012453 solvate Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- RINCXYDBBGOEEQ-UHFFFAOYSA-N succinic anhydride Chemical class O=C1CCC(=O)O1 RINCXYDBBGOEEQ-UHFFFAOYSA-N 0.000 description 1
- 239000005720 sucrose Substances 0.000 description 1
- 125000000446 sulfanediyl group Chemical class *S* 0.000 description 1
- PXQLVRUNWNTZOS-UHFFFAOYSA-N sulfanyl Chemical class [SH] PXQLVRUNWNTZOS-UHFFFAOYSA-N 0.000 description 1
- 238000002210 supercritical carbon dioxide drying Methods 0.000 description 1
- 239000000375 suspending agent Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
- 238000010200 validation analysis Methods 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (13)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US26902601P | 2001-02-15 | 2001-02-15 | |
| US60/269,026 | 2001-02-15 | ||
| US09/932,063 US6562146B1 (en) | 2001-02-15 | 2001-08-17 | Processes for cleaning and drying microelectronic structures using liquid or supercritical carbon dioxide |
| US09/932,063 | 2001-08-17 | ||
| US09/951,249 US6641678B2 (en) | 2001-02-15 | 2001-09-13 | Methods for cleaning microelectronic structures with aqueous carbon dioxide systems |
| US09/951,259 | 2001-09-13 | ||
| US09/951,247 | 2001-09-13 | ||
| US09/951,259 US6596093B2 (en) | 2001-02-15 | 2001-09-13 | Methods for cleaning microelectronic structures with cyclical phase modulation |
| US09/951,249 | 2001-09-13 | ||
| US09/951,092 US6613157B2 (en) | 2001-02-15 | 2001-09-13 | Methods for removing particles from microelectronic structures |
| US09/951,092 | 2001-09-13 | ||
| US09/951,247 US6602351B2 (en) | 2001-02-15 | 2001-09-13 | Methods for the control of contaminants following carbon dioxide cleaning of microelectronic structures |
| PCT/US2002/004398 WO2002066176A1 (fr) | 2001-02-15 | 2002-02-14 | Procedes de nettoyage de structures microelectroniques |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20030075185A true KR20030075185A (ko) | 2003-09-22 |
Family
ID=27559475
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-2003-7010495A KR20030075185A (ko) | 2001-02-15 | 2002-02-14 | 마이크로 전자 소자를 세정하는 방법 |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP1368136A4 (fr) |
| JP (1) | JP2004527110A (fr) |
| KR (1) | KR20030075185A (fr) |
| CN (1) | CN1628000A (fr) |
| WO (1) | WO2002066176A1 (fr) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100597656B1 (ko) * | 2003-10-02 | 2006-07-07 | 그린텍이십일 주식회사 | 반도체의 제조를 위한 세정방법 및 세정장치 |
| US8084367B2 (en) | 2006-05-24 | 2011-12-27 | Samsung Electronics Co., Ltd | Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6905555B2 (en) * | 2001-02-15 | 2005-06-14 | Micell Technologies, Inc. | Methods for transferring supercritical fluids in microelectronic and other industrial processes |
| US7267727B2 (en) | 2002-09-24 | 2007-09-11 | Air Products And Chemicals, Inc. | Processing of semiconductor components with dense processing fluids and ultrasonic energy |
| US6989172B2 (en) | 2003-01-27 | 2006-01-24 | Micell Technologies, Inc. | Method of coating microelectronic substrates |
| US20050029492A1 (en) | 2003-08-05 | 2005-02-10 | Hoshang Subawalla | Processing of semiconductor substrates with dense fluids comprising acetylenic diols and/or alcohols |
| US7141496B2 (en) | 2004-01-22 | 2006-11-28 | Micell Technologies, Inc. | Method of treating microelectronic substrates |
| CN1960813A (zh) * | 2004-05-07 | 2007-05-09 | 高级技术材料公司 | 在制备集成电路产品过程中用于干燥构图晶片的组合物和方法 |
| US7195676B2 (en) | 2004-07-13 | 2007-03-27 | Air Products And Chemicals, Inc. | Method for removal of flux and other residue in dense fluid systems |
| KR100708773B1 (ko) | 2006-01-21 | 2007-04-17 | 서강대학교산학협력단 | 세정공정 |
| CN102371254B (zh) * | 2010-08-11 | 2013-08-14 | 中国科学院微电子研究所 | 清洗系统 |
| EP3667705A1 (fr) * | 2012-04-17 | 2020-06-17 | Praxair Technology, Inc. | Procédé et système de distribution de multiples phases purifiées de dioxyde de carbone à une chambre de traitement |
| CN103962345B (zh) * | 2013-01-29 | 2017-02-08 | 无锡华润上华科技有限公司 | 晶圆的碎屑的清除方法 |
| US20180323063A1 (en) * | 2017-05-03 | 2018-11-08 | Applied Materials, Inc. | Method and apparatus for using supercritical fluids in semiconductor applications |
| KR20190138743A (ko) * | 2018-06-06 | 2019-12-16 | 도오꾜오까고오교 가부시끼가이샤 | 기판의 처리 방법 및 린스액 |
| KR102378329B1 (ko) | 2019-10-07 | 2022-03-25 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
| US11239071B1 (en) * | 2020-12-03 | 2022-02-01 | Nanya Technology Corporation | Method of processing semiconductor device |
| CN113436998B (zh) * | 2021-07-02 | 2022-02-18 | 江苏鑫华半导体材料科技有限公司 | 一种超临界二氧化碳硅块清洗装置、硅块处理系统及方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08330266A (ja) * | 1995-05-31 | 1996-12-13 | Texas Instr Inc <Ti> | 半導体装置等の表面を浄化し、処理する方法 |
| US5783082A (en) * | 1995-11-03 | 1998-07-21 | University Of North Carolina | Cleaning process using carbon dioxide as a solvent and employing molecularly engineered surfactants |
| US6306564B1 (en) * | 1997-05-27 | 2001-10-23 | Tokyo Electron Limited | Removal of resist or residue from semiconductors using supercritical carbon dioxide |
| US6067728A (en) * | 1998-02-13 | 2000-05-30 | G.T. Equipment Technologies, Inc. | Supercritical phase wafer drying/cleaning system |
| US6242165B1 (en) * | 1998-08-28 | 2001-06-05 | Micron Technology, Inc. | Supercritical compositions for removal of organic material and methods of using same |
| US6277753B1 (en) * | 1998-09-28 | 2001-08-21 | Supercritical Systems Inc. | Removal of CMP residue from semiconductors using supercritical carbon dioxide process |
-
2002
- 2002-02-14 CN CNA028049756A patent/CN1628000A/zh active Pending
- 2002-02-14 WO PCT/US2002/004398 patent/WO2002066176A1/fr not_active Application Discontinuation
- 2002-02-14 EP EP02724947A patent/EP1368136A4/fr not_active Withdrawn
- 2002-02-14 KR KR10-2003-7010495A patent/KR20030075185A/ko not_active Application Discontinuation
- 2002-02-14 JP JP2002565725A patent/JP2004527110A/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100597656B1 (ko) * | 2003-10-02 | 2006-07-07 | 그린텍이십일 주식회사 | 반도체의 제조를 위한 세정방법 및 세정장치 |
| US8084367B2 (en) | 2006-05-24 | 2011-12-27 | Samsung Electronics Co., Ltd | Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2004527110A (ja) | 2004-09-02 |
| EP1368136A4 (fr) | 2005-10-12 |
| EP1368136A1 (fr) | 2003-12-10 |
| WO2002066176A1 (fr) | 2002-08-29 |
| CN1628000A (zh) | 2005-06-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |