KR20030058515A - High aperture ratio lcd device removed black matrix - Google Patents

High aperture ratio lcd device removed black matrix Download PDF

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KR20030058515A
KR20030058515A KR1020010088971A KR20010088971A KR20030058515A KR 20030058515 A KR20030058515 A KR 20030058515A KR 1020010088971 A KR1020010088971 A KR 1020010088971A KR 20010088971 A KR20010088971 A KR 20010088971A KR 20030058515 A KR20030058515 A KR 20030058515A
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liquid crystal
black matrix
substrate
glass substrate
crystal display
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KR100453364B1 (en
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최현묵
류재일
김기용
김억수
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비오이 하이디스 테크놀로지 주식회사
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509Filters, e.g. light shielding masks
    • G02F1/133514Colour filters
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Crystal (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE: A high aperture ratio liquid crystal display without a black matrix is provided to prevent color mix between adjacent pixel areas without forming the black matrix, thereby preventing an aperture ratio from decreasing due to the black matrix. CONSTITUTION: A plurality of gate bus lines and data bus lines(2) are crossly arranged on a first glass substrate(1) of a lower substrate(10). Thin film transistors are formed at cross points. A pixel electrode(6) formed of an ITO(Indium Tin Oxide) material is formed in each pixel area and extended to the upper parts of the gate bus lines and the data bus lines. R, G, and B color filters(14) are formed on a second glass substrate(11) of an upper substrate(20), corresponding to the pixel areas. An overcoat layer(16) is formed on a front surface of the second glass substrate, having concave patterns at surface parts corresponding to boundary parts between the pixel areas. A relative electrode(18) formed of the ITO material is formed on the overcoat layer. A liquid crystal layer(30) is interposed between the lower substrate and the upper substrate.

Description

블랙매트릭스가 제거된 고개구율 액정표시장치{HIGH APERTURE RATIO LCD DEVICE REMOVED BLACK MATRIX}HIGH APERTURE RATIO LCD DEVICE REMOVED BLACK MATRIX}

본 발명은 액정표시장치에 관한 것으로, 보다 상세하게는, 고개구율을 얻기 위해 블랙매트릭스를 제거한 액정표시장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly, to a liquid crystal display device in which a black matrix is removed to obtain a high opening ratio.

주지된 바와 같이, 액정표시장치는 CRT(Cathod-ray tube)를 대신하여 개발되어져 왔다. 특히, 박막트랜지스터 액정표시장치는 휴대형 단말기기의 정보표시기, 노트북 PC의 화면표시기, 랩탑 컴퓨터의 모니터 등에서 각광 받고 있는 바, 상기 CRT를 대체할 수 있는 표시장치로 산업상 그 활용도가 매우 높아져가고 있다.As is well known, liquid crystal displays have been developed in place of the CRT (Cathod-ray tube). In particular, the thin film transistor liquid crystal display device has been in the spotlight in the information display of a portable terminal device, the screen display of a notebook PC, the monitor of a laptop computer, etc., and thus, the utilization of the thin film transistor as a display device that can replace the CRT has been very high. .

이러한 액정표시장치에 있어서, 고화질의 표시 화면을 얻기 위해서는 화소전극 면적에 대한 실제 빛 투과 비율을 나타내는 개구율의 향상이 우선적이며, 개구율을 향상시키기 위한 하나의 기술로서, 종래에는 화소 전극의 면적을 증대시키기 위한 탑 ITO(Indium Tin Oxide) 구조가 제안되었다.In such a liquid crystal display device, in order to obtain a high quality display screen, the improvement of the aperture ratio indicating the actual light transmission ratio with respect to the pixel electrode area is a priority, and as one technique for improving the aperture ratio, the area of the pixel electrode is conventionally increased. Top Indium Tin Oxide (ITO) structure has been proposed.

상기 탑 ITO 구조는 화소전극과 데이터버스라인 사이에 저유전 상수를 갖는 유기절연막을 개재시켜 상기 화소전극이 데이터 라인의 상부까지 배치되도록 한 구조이며, 이와 같은 탑 ITO 구조는 개구영역의 증가를 통해 개구율을 향상시킬 수 있음은 물론, 공정 단순화의 부가적인 효과도 얻을 수 있다.The top ITO structure is a structure in which the pixel electrode is disposed up to an upper portion of the data line by interposing an organic insulating film having a low dielectric constant between the pixel electrode and the data bus line. Not only can the aperture ratio be improved, but the additional effect of process simplification can also be obtained.

도 1은 종래 기술에 따라 형성된 탑 ITO 구조의 액정표시장치를 개략적으로 도시한 단면도로서, 이를 설명하면 다음과 같다.1 is a cross-sectional view schematically illustrating a liquid crystal display device having a top ITO structure formed according to the prior art, which will be described below.

하부 기판(10)과 상부기판(20)이 이격해서 대향 배치되고, 기판들(10, 20) 사이 공간에는 액정층(30)이 개재된다.The lower substrate 10 and the upper substrate 20 are spaced apart from each other, and the liquid crystal layer 30 is interposed between the substrates 10 and 20.

여기서, 상기 하부기판(10)에는 수 개의 게이트버스라인(도시안됨)과 데이터버스라인(2)이 수직 교차하도록 배열되며, 각 교차부에는 스위칭 소자로서 박막트랜지스터(도시안됨)가 형성되고, 상기 게이트버스라인과 데이터버스라인(2)에 의해 구획된 각 화소영역 내에는 ITO로 이루어진 화소전극(6)이 유기절연막(4)의 개재하에 상기 게이트버스라인 및 데이터버스라인(2)의 상부까지 연장하도록 배치된다.Here, a plurality of gate bus lines (not shown) and data bus lines 2 are vertically intersected on the lower substrate 10, and thin film transistors (not shown) are formed at each intersection as switching elements. In each pixel region partitioned by the gate bus line and the data bus line 2, a pixel electrode 6 made of ITO extends to the upper portion of the gate bus line and the data bus line 2 through the organic insulating film 4. It is arranged to extend.

상기 상부기판(20)에는 게이트버스라인 및 데이터버스라인(2)에 대응하는 부분가 박막트랜지스터에 대응하는 부분에 블랙매트릭스(12)가 형성되며, 상기 블랙매트릭스(12)에 의해 구획된 화소 대응 영역에는 R, G, B의 컬러필터(14)가 형성되고, 상기 블랙매트릭스(12) 및 컬러필터(14) 상에는 평탄화를 위한 오버코트막(16)이 도포되며, 이러한 오버코트막(16) 상에는 ITO로 이루어진 상대전극(18)이 형성된다.In the upper substrate 20, a black matrix 12 is formed at a portion corresponding to the gate bus line and the data bus line 2 and corresponds to a thin film transistor, and a pixel correspondence region partitioned by the black matrix 12. An R, G, and B color filter 14 is formed, and an overcoat film 16 for planarization is applied on the black matrix 12 and the color filter 14, and on the overcoat film 16 with ITO. A counter electrode 18 is formed.

미설명된 도면부호 1은 제1유리기판, 11은 제2유리기판을 나타낸다.Unexplained reference numeral 1 denotes a first glass substrate and 11 denotes a second glass substrate.

그러나, 상기와 같은 종래의 고개구율 액정표시장치는 다음과 같은 문제점을 갖는다. 주지된 바와 같이, 블랙 매트릭스는 컬러필터간의 색섞임을 방지하면서 광누설을 차단하는 역할을 하며, 하부기판과 상부기판 합착시의 오정렬(misalign)이 발생되는 것을 고려하여, 게이트 또는 데이타버스라인의 폭보다 좀 더 큰 폭으로 설계된다. 이때, 상기 블랙매트릭스는 오정렬을 고려하여 개구영역 쪽으로 소정치 만큼 확장되도록 설계되므로, 사실상 개구율을 감소시키게 되는 바, 고개구율을 확보할 수 없다.However, the conventional high aperture liquid crystal display device as described above has the following problems. As is well known, the black matrix serves to block light leakage while preventing color mixing between the color filters, and in consideration of occurrence of misalignment when the lower substrate and the upper substrate are bonded, It is designed to be wider than it is wide. At this time, since the black matrix is designed to extend by a predetermined value toward the opening area in consideration of misalignment, the opening rate is substantially reduced, and thus a high opening rate cannot be secured.

한편, 개구율 측면을 고려할 때, 블랙매트릭스를 생략하면 되지만, 이 경우에는 화소 끝부분에서 색섞임이 발생되어 액정표시장치의 화면품위 및 생산성의 저하가 초래되는 바, 상기 블랙매트릭스의 생략은 실질적으로 곤란하다.On the other hand, in consideration of the aperture ratio, the black matrix may be omitted. In this case, color mixing may occur at the end of the pixel, resulting in deterioration of screen quality and productivity of the liquid crystal display device. It is difficult.

따라서, 본 발명은 상기와 같은 문제점을 해결하기 위해 안출된 것으로서, 블랙매트릭스에 기인하는 개구율의 감소를 방지할 수 있는 액정표시장치를 제공함에 그 목적이 있다.Accordingly, an object of the present invention is to provide a liquid crystal display device capable of preventing a decrease in aperture ratio due to a black matrix, which is devised to solve the above problems.

도 1은 종래 기술에 따라 형성된 탑 ITO 구조의 고개구율 액정표시장치를 개략적으로 도시한 단면도.1 is a cross-sectional view schematically showing a high aperture liquid crystal display device having a top ITO structure formed according to the prior art;

도 2는 본 발명의 일실시예에 따른 따른 블랙매트릭스가 없는 액정표시장치의 단면도.2 is a cross-sectional view of a liquid crystal display without a black matrix according to an embodiment of the present invention.

도 3은 본 발명의 다른 실시예에 따른 블랙매트릭스가 없는 액정표시장치의 단면도.3 is a cross-sectional view of a liquid crystal display device without a black matrix according to another embodiment of the present invention.

* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings

1 : 제1유리기판 2 : 데이터버스라인1: first glass substrate 2: data bus line

4 : 유기절연막 6 : 화소전극4 organic insulating film 6 pixel electrode

10 : 하부기판 11 : 제2유리기판10: lower substrate 11: second glass substrate

12 : 블랙매트릭스 14 : 컬러필터12: black matrix 14: color filter

16 : 오버코트막 18 : 상대전극16: overcoat film 18: counter electrode

20 : 상부 기판 30 : 액정층20: upper substrate 30: liquid crystal layer

A : 오목 렌즈 B : 볼록 렌즈A: concave lens B: convex lens

상기와 같은 목적을 달성하기 위한 본 발명의 액정표시장치는, 제1유리기판 상에 수 개의 게이트버스라인과 데이터버스라인이 교차 배열되고, 상기 라인들간의 교차부에는 박막트랜지스터가 형성되며, 상기 라인들에 의해 한정된 각 화소영역 내에는 유기절연막의 개재하에 상기 게이트버스라인 및 데이터버스라인의 상부까지 연장되게 ITO 재질의 화소전극이 형성된 하부기판; 상기 하부기판과 대향 배치되며, 제2유리기판 상에 화소영역에 대응해서 R, G, B의 컬러필터가 형성되고, 상기 컬러필터를 포함한 제2유리기판의 전면 상에는 화소영역들간의 경계부에 대응하는 표면 부위에 오목 또는 볼록 패턴을 갖는 오버코트막이 형성되며, 상기 오버코트막 상에는 그 표면을 따라 ITO 재질의 상대전극이 형성된 상부기판; 및 상기 하부기판과 상부기판 사이에 개재되는 액정층을 포함한다.In the liquid crystal display device of the present invention for achieving the above object, several gate bus lines and data bus lines are arranged on the first glass substrate, the thin film transistor is formed at the intersections of the lines, A lower substrate having a pixel electrode made of ITO formed in each pixel region defined by lines to extend to an upper portion of the gate bus line and the data bus line through an organic insulating film; A color filter of R, G, and B is formed on the second glass substrate to face the lower substrate, and corresponds to the boundary between the pixel regions on the front surface of the second glass substrate including the color filter. An upper substrate having a concave or convex pattern formed on a surface portion thereof, the upper substrate having a counter electrode made of ITO formed along the surface thereof; And a liquid crystal layer interposed between the lower substrate and the upper substrate.

여기서, 상기 오버코트막의 오목 또는 볼록 패턴은 액정과 오버코트막 물질의 굴절률에 따라 선택되며, 상기 액정의 굴절률이 상기 오버코트막 물질의 굴절률 보다 큰 경우에는 오목 패턴이, 반대로, 상기 액정의 굴절률이 상기 오버코트막 물질의 굴절률 보다 작은 경우에는 볼록 패턴이 구비된다.Here, the concave or convex pattern of the overcoat layer is selected according to the refractive indices of the liquid crystal and the overcoat film material. When the refractive index of the liquid crystal is larger than that of the overcoat film material, the concave pattern is reversed. If it is smaller than the refractive index of the film material, a convex pattern is provided.

본 발명에 따르면, 화소의 경계부에 대응하는 오버코트막 부분에 오목 또는 볼록 패턴을 구비시킴으로써, 블랙매트릭스의 생략이 가능하며, 이에 따라, 개구율을 향상시킬 수 있다.According to the present invention, the black matrix can be omitted by providing the concave or convex pattern in the overcoat film portion corresponding to the boundary portion of the pixel, thereby improving the aperture ratio.

(실시예)(Example)

이하 첨부한 도면에 의거하여 본 발명의 바람직한 실시예를 자세히 설명하도록 한다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 2는 본 발명의 실시예에 따른 액정표시장치를 도시한 단면도로서, 여기서, 도 1과 동일한 부분은 동일한 도면부호로 나타낸다.FIG. 2 is a cross-sectional view of a liquid crystal display according to an exemplary embodiment of the present invention, wherein the same parts as in FIG. 1 are designated by the same reference numerals.

도시된 바와 같이, 본 발명의 액정표시장치는 하부기판(10)과 상부기판(20)이 액정층(30)의 개재하에 합착된 구조이다. 상기 하부기판(10)은 종래의 그것과 동일하게 제1유리기판(1) 상에 수 개의 게이트버스라인(도시안됨)과 데이터버스라인(2)이 교차 배열되고, 상기 라인들간의 교차부에는 박막트랜지스터(도시안됨)가 형성되며, 상기 라인들에 의해 한정된 각 화소영역 내에는 유기절연막(4)의 개재하에 상기 게이트버스라인 및 데이터버스라인(2)의 상부까지 연장되게 ITO 재질의 화소전극(6)이 형성된 구조를 갖는다.As illustrated, the liquid crystal display of the present invention has a structure in which the lower substrate 10 and the upper substrate 20 are bonded to each other under the liquid crystal layer 30. In the lower substrate 10, several gate bus lines (not shown) and data bus lines 2 are arranged on the first glass substrate 1 in the same manner as the conventional one, and at the intersections of the lines, A thin film transistor (not shown) is formed, and in each pixel region defined by the lines, a pixel electrode made of ITO material extends to an upper portion of the gate bus line and the data bus line 2 through an organic insulating film 4. (6) has a formed structure.

반면, 상기 상부기판(20)은 종래의 그것과 비교해서 블랙매트릭스가 없는 구조를 갖으며, 특히, 상기 블랙매트릭스가 제거된 영역, 즉, 화소영역들간의 경계부에 해당하는 상대전극 부분에 오목 렌즈(A)가 구비된다.On the other hand, the upper substrate 20 has a structure without a black matrix as compared with the conventional one, and in particular, a concave lens in a counter electrode portion corresponding to a region where the black matrix is removed, that is, a boundary between pixel regions. (A) is provided.

자세하게, 상기 상부기판(20)은 제2유리기판(11) 상에 화소영역에 대응해서R, G, B의 컬러필터(14)가 형성되며, 상기 컬러필터(14)를 포함한 제2유리기판(11)의 전면 상에는 화소영역들간의 경계부에 대응하는 표면 부위에 오목 패턴을 갖는 오버코트막(16)이 형성되고, 상기 오버코트막(16) 상에는 그 표면을 따라 ITO 재질의 상대전극(18)이 형성된 구조를 갖으며, 이때, 상기 오버코트막(16)의 오목 패턴 상에 ITO가 증착됨에 따라, 이 부분에 오목 렌즈(A)가 만들어진다.In detail, the upper substrate 20 includes R, G, and B color filters 14 formed on the second glass substrate 11 to correspond to the pixel region, and the second glass substrate including the color filter 14. An overcoat film 16 having a concave pattern is formed on the front surface of the surface 11 corresponding to the boundary between the pixel regions, and the counter electrode 18 of ITO material is formed on the overcoat film 16 along the surface thereof. In this case, as the ITO is deposited on the concave pattern of the overcoat layer 16, a concave lens A is formed in this portion.

상기 오버코트막(16)은 감광성 레진막으로 형성함이 바람직하며, 상기 감광성 레진막에 오목 패턴을 형성하기 위해 다음과 같은 공정을 수행한다.The overcoat layer 16 is preferably formed of a photosensitive resin film, and the following process is performed to form a concave pattern on the photosensitive resin film.

우선, 제2유리기판 상에 R, G, B의 컬러필터를 형성한 상태에서, 예컨데, 스핀 코터(spin coater)를 사용하여 아크릴, BCB 및 폴리이미드와 같은 감광성 레진막을 도포한다. 그런다음, 상기 도포된 감광성 레진막에 대한 소프트베이크 공정을 수행하여 솔베트 성분을 제거한 상태에서, 오목 패턴이 형성될 영역이 크롬 처리되거나, 또는, 크롬 처리되지 않은 노광 마스크 및 UV를 이용한 노광 공정을 수행한다. 이어서, TMAH(TetraMethyl Ammonium Hydroxide)와 같은 알칼리 용액을 이용하여 노광된 감광성 레진막에 대한 현상을 수행하여 감광성 레진막의 표면에 오목 패턴을 형성한다.First, in a state in which color filters of R, G, and B are formed on the second glass substrate, for example, a photosensitive resin film such as acrylic, BCB, and polyimide is coated using a spin coater. Then, the soft-baking process for the coated photosensitive resin film is performed to remove the solvent component, and the region where the concave pattern is to be formed is chrome-treated or an exposure process using an chromium-free exposure mask and UV. Do this. Subsequently, development of the exposed photosensitive resin film is performed using an alkaline solution such as TetraMethyl Ammonium Hydroxide (TMAH) to form a concave pattern on the surface of the photosensitive resin film.

이때, 상기 노광시에는 감광성 레진막의 종류, 즉, 네가티브형 또는 포지티브형에 따라 오목 패턴을 형성하고자 하는 감광성 레진막 부분, 즉, 화소들간의 경계부에 빛을 조사하거나, 반대로 그 이외 부분에 빛을 조사하는 방식을 이용하며, 아울러, 적절하게 노광량을 조절한다.At this time, during the exposure, light is irradiated to a portion of the photosensitive resin film, that is, a boundary between pixels, to form a concave pattern according to the type of the photosensitive resin film, that is, a negative type or a positive type, or vice versa. The irradiation method is used, and the exposure amount is appropriately adjusted.

그 다음, 핫플레이트에서 하드 베이크(haed bake) 공정을 수행하여 표면에오목 패턴을 갖는 오버코트막의 형성을 완성한다. 여기서, 상기 하드 베이크 공정은 소프트 베이크 공정 보다 높은 온도에서 행하며, 패턴의 곡률을 고려하여 200℃ 이상의 고온에서 기판을 가열하고, 이를 통해, 후속 공정의 안정화를 도모한다.Then, a hard bake process is performed on the hot plate to complete formation of an overcoat film having a concave pattern on the surface. In this case, the hard bake process is performed at a higher temperature than the soft bake process, and the substrate is heated at a high temperature of 200 ° C. or higher in consideration of the curvature of the pattern, thereby stabilizing subsequent processes.

이와 같은 구조에 있어서, 오목 렌즈(A)는 화소영역의 끝단에서 퍼지는 빛을 한 지점으로 모이도록 기능하는 바, 화소들간의 색섞음을 방지할 수 있다. 따라서, 블랙매트릭스의 형성없이도 인접하는 화소영역들간의 색섞임을 방지할 수 있고, 그래서, 블랙매트릭스에 기인하는 개구율의 감소를 방지할 수 있어서 고개구율의 액정표시장치를 구현할 수 있다.In such a structure, the concave lens A functions to collect light spreading from the end of the pixel region to a point, thereby preventing color mixing between the pixels. Therefore, color mixing between adjacent pixel regions can be prevented without the formation of the black matrix, and therefore, the reduction of the aperture ratio due to the black matrix can be prevented, so that a liquid crystal display device having a high aperture ratio can be realized.

한편, 블랙매트릭스의 대용으로서, 전술한 오목 렌즈(A) 이외에, 도 3에 도시된 바와 같이, 볼록 렌즈(B)를 구비시킬 수 있다.On the other hand, as a substitute for the black matrix, in addition to the above-mentioned concave lens A, as shown in FIG. 3, a convex lens B can be provided.

여기서, 상기 오목 렌즈(A) 또는 볼록 렌즈(B)는 액정의 굴절률과 오버코트막 물질, 즉, 레진막의 굴절률에 따라 선택되며, 예컨데, 액정의 굴절률이 레진막의 굴절률 보다 큰 경우에는 오버코트막에 오목 패턴을 형성시켜 오목 렌즈(A)를 만들어주고, 반대로, 액정의 굴절률이 레진막의 굴절률 보다 작은 경우에는 오버코트막의 표면에 볼록 패턴을 형성시켜 볼록 렌즈(B)를 만들어준다.Here, the concave lens A or the convex lens B is selected according to the refractive index of the liquid crystal and the overcoat film material, that is, the refractive index of the resin film. For example, when the refractive index of the liquid crystal is larger than that of the resin film, the concave lens A or the convex lens B is concave in the overcoat film. By forming a pattern to form a concave lens (A), on the contrary, when the refractive index of the liquid crystal is smaller than that of the resin film, a convex pattern is formed on the surface of the overcoat film to make the convex lens (B).

이상에서와 같이, 본 발명은 블랙매트릭스 형성 영역에 오목 또는 볼록 렌즈를 만들어 줌으로써, 상기 블랙매트릭스의 형성없이도 인접하는 화소영역들간의 색섞임을 방지할 수 있으며, 따라서, 블랙매트릭스의 형성을 생략할 수 있는 바, 상기 블랙매트릭스에 기인하는 개구율 감소를 방지할 수 있고, 그래서, 고개구율의액정표시장치를 제공할 수 있다.As described above, according to the present invention, by forming a concave or convex lens in the black matrix forming region, color mixing between adjacent pixel regions can be prevented without forming the black matrix, and thus, the formation of the black matrix can be omitted. As a result, it is possible to prevent the reduction of the aperture ratio due to the black matrix, and thus to provide a liquid crystal display device having a high opening ratio.

기타, 본 발명은 그 요지를 일탈하지 않는 범위에서 다양하게 변경하여 실시할 수 있다.In addition, this invention can be implemented in various changes within the range which does not deviate from the summary.

Claims (4)

제1유리기판 상에 수 개의 게이트버스라인과 데이터버스라인이 교차 배열되고, 상기 라인들간의 교차부에는 박막트랜지스터가 형성되며, 상기 라인들에 의해 한정된 각 화소영역 내에는 유기절연막의 개재하에 상기 게이트버스라인 및 데이터버스라인의 상부까지 연장되게 ITO 재질의 화소전극이 형성된 하부기판;Several gate bus lines and data bus lines are intersected on the first glass substrate, and thin film transistors are formed at the intersections of the lines, and in each pixel region defined by the lines, the organic insulating film is interposed therebetween. A lower substrate on which a pixel electrode made of ITO is formed to extend to an upper portion of the gate bus line and the data bus line; 상기 하부기판과 대향 배치되며, 제2유리기판 상에 화소영역에 대응해서 R, G, B의 컬러필터가 형성되고, 상기 컬러필터를 포함한 제2유리기판의 전면 상에는 화소영역들간의 경계부에 대응하는 표면 부위에 오목 또는 볼록 패턴을 갖는 오버코트막이 형성되며, 상기 오버코트막 상에는 그 표면을 따라 ITO 재질의 상대전극이 형성된 상부기판; 및A color filter of R, G, and B is formed on the second glass substrate to face the lower substrate, and corresponds to the boundary between the pixel regions on the front surface of the second glass substrate including the color filter. An upper substrate having a concave or convex pattern formed on a surface portion thereof, the upper substrate having a counter electrode made of ITO formed along the surface thereof; And 상기 하부기판과 상부기판 사이에 개재되는 액정층을 포함하는 것을 특징으로 하는 액정표시장치.And a liquid crystal layer interposed between the lower substrate and the upper substrate. 제 1 항에 있어서, 상기 오버코트막의 오목 또는 볼록 패턴은The method of claim 1, wherein the concave or convex pattern of the overcoat layer 액정과 오버코트막 물질의 굴절률에 따라 선택되는 것을 특징으로 하는 액정표시장치.A liquid crystal display device, characterized in that selected according to the refractive index of the liquid crystal and the overcoat material. 제 2 항에 있어서, 상기 액정의 굴절률이 상기 오버코트막 물질의 굴절률 보다 크면, 오목 패턴이 선택되는 것을 특징으로 하는 액정표시장치.The liquid crystal display device according to claim 2, wherein the concave pattern is selected if the refractive index of the liquid crystal is larger than that of the overcoat material. 제 2 항에 있어서, 상기 액정의 굴절률이 상기 오버코트막 물질의 굴절률 보다 작으면, 볼록 패턴이 선택되는 것을 특징으로 하는 액정표시장치.The liquid crystal display device according to claim 2, wherein the convex pattern is selected if the refractive index of the liquid crystal is smaller than the refractive index of the overcoat material.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101007361B1 (en) * 2008-10-20 2011-01-13 두지산업 주식회사 Hair band

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10394082B2 (en) 2014-03-31 2019-08-27 Samsung Display Co., Ltd. Curved display device
US9671647B2 (en) 2014-03-31 2017-06-06 Samsung Display Co., Ltd. Curved display device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970002402A (en) * 1995-06-03 1997-01-24 Color liquid crystal display
JP3575135B2 (en) * 1995-10-18 2004-10-13 セイコーエプソン株式会社 Liquid crystal display
JPH11326929A (en) * 1998-05-11 1999-11-26 Toshiba Corp Liquid crystal display element
JP3558533B2 (en) * 1998-09-16 2004-08-25 シャープ株式会社 Liquid crystal display
KR100393389B1 (en) * 2001-02-07 2003-07-31 엘지.필립스 엘시디 주식회사 Reflective Liquid Crystal Display Device using a Cholesteric Liquid Crystal Color Filter
KR100811642B1 (en) * 2001-12-18 2008-03-11 엘지.필립스 엘시디 주식회사 BM-free reflection type liquid crystal display device and the method for fabricating thereof

Cited By (1)

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