KR20030049577A - method for stacking semiconductor package - Google Patents

method for stacking semiconductor package Download PDF

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Publication number
KR20030049577A
KR20030049577A KR1020010079819A KR20010079819A KR20030049577A KR 20030049577 A KR20030049577 A KR 20030049577A KR 1020010079819 A KR1020010079819 A KR 1020010079819A KR 20010079819 A KR20010079819 A KR 20010079819A KR 20030049577 A KR20030049577 A KR 20030049577A
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KR
South Korea
Prior art keywords
package
grid array
ball grid
connectors
circuit board
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KR1020010079819A
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Korean (ko)
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KR100567055B1 (en
Inventor
윤승욱
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주식회사 하이닉스반도체
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Priority to KR1020010079819A priority Critical patent/KR100567055B1/en
Publication of KR20030049577A publication Critical patent/KR20030049577A/en
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Publication of KR100567055B1 publication Critical patent/KR100567055B1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/105Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L27/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32135Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/50Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1047Details of electrical connections between containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE: A stacking method of a semiconductor package is provided to be capable of reducing the size of a ball grid array package by folding the lateral and upper portion using a conductive tape. CONSTITUTION: The first and second package(100,200) are provided with the first and second molding parts(104,204) formed on the upper portions, the first and second conductive balls(106) attached on the lower portions, the first and second circuit boards(102,202), and the first and second connecting parts(103,203) prolonged from the first and second circuit boards, respectively. The first and the second molding parts are enclosed by folding the first and the second connecting parts. After removing the second conductive balls, the rear surface of the second circuit board is attached on the upper surface of the first circuit board.

Description

반도체 패키지의 적층방법{method for stacking semiconductor package}Method for stacking semiconductor package

본 발명은 반도체 패키지의 적층방법에 관한 것으로서, 더욱 상세하게는 BGA(Ball Grid Array package) 타입의 반도체 패키지를 다 수개 적층할 수 있는 반도체 패키지의 적층방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a stacking method of a semiconductor package, and more particularly, to a stacking method of a semiconductor package capable of stacking a plurality of ball grid array package (BGA) type semiconductor packages.

전자기기들의 경박단소화 추세에 따라 그의 핵심 소자인 패키지의 고밀도, 고실장화가 중요한 요인으로 대두되고 있으며, 또한 컴퓨터의 경우 기억 용량의 증가에 따른 대용량의 램(Random Access Memory ; RAM) 및 프레쉬 메모리(Flash Memory)와 같이 칩의 크기는 자연적으로 증대되지만 패키지는 상기의 요건에 따라 소형화되는 경향으로 연구되고 있다.With the trend toward thinner and shorter electronic devices, high-density and high-mounted packages are becoming an important factor.In the case of computers, a large amount of random access memory (RAM) and fresh memory as the storage capacity increases. Like the Flash Memory, the size of the chip grows naturally, but the package is being studied to be smaller in accordance with the above requirements.

한편, 패키지의 크기를 소형화할 수 있는 여러 타입의 패키지 중의 하나로 패키지 하부에 도전 성볼을 부착시키는 볼 그리드 어레이 패키지를 들 수 있는 데, 상기 볼 그리드 어레이 패키지는 기판의 이면에 구형의 솔더 볼(solder ball) 등의 도전성 볼을 소정의 상태로 배열하여 아우터 리드(outer lead) 대신으로 사용하게 되며, 패키지 몸체 면적을 QFP(Quad Flat Package) 타입보다 작게 할 수 있고, QFP와는 달리 리드의 변형이 없는 장점이 있다.On the other hand, one of several types of packages that can reduce the size of the package is a ball grid array package for attaching a conductive ball to the bottom of the package, the ball grid array package is a spherical solder ball (solder) on the back of the substrate Conductive balls such as balls are arranged in a predetermined state to be used instead of the outer lead, and the package body area can be made smaller than the QFP (Quad Flat Package) type, and unlike QFP, there is no deformation of the lead. There is an advantage.

상기 장점을 가진 볼 그리드 어레이 패키지의 제작 과정을 알아보면 다음과 같다. 먼저, 웨이퍼 상면에 집적회로를 형성하는 FAB(Fabrication)공정이 끝난 상태에서 웨이퍼에 형성된 반도체 칩을 개별적으로 분리하기 위한 쏘잉(sawing)을 실시한다.Looking at the manufacturing process of the ball grid array package having the above advantages are as follows. First, sawing is performed to individually separate semiconductor chips formed on a wafer in a state where an FAB (fabrication) process for forming an integrated circuit on the upper surface of the wafer is completed.

그 다음, 내부에 배선이 형성된 회로기판이 공정에 투입됨에 따라 회로기판 상면에 접착제를 도포하여 절단된 반도체 칩을 본딩시키게 되며, 칩 본딩이 끝난 후에는 반도체 칩에 형성된 본딩패드와 회로기판 상의 소정의 배선 사이를 와이어를 이용하여 서로 전기적으로 연결시키는 와이어 본딩을 실시하게 된다.Then, as the circuit board having the wiring formed therein is put into the process, an adhesive is applied to the upper surface of the circuit board to bond the cut semiconductor chip. After chip bonding is completed, the bonding pad formed on the semiconductor chip and a predetermined portion on the circuit board are bonded. Wire bonding is performed to electrically connect the wires between the wires.

그리고, 와이어 본딩이 완료된 후에는 반도체 칩을 EMC(Epoxy Molding Compound)로 봉지하는 몰딩 공정을 수행하게 되며, 몰딩이 완료된 다음에는 상기 회로기판 저면에 솔더 볼을 부착시킨 다음, 열처리 공정인 리플로우(Reflow)를 수행하여 솔더 볼을 패키지 본체에 견고히 고정시키고 나서 테스트를 통해 볼 그리드 어레이 패키지 제작을 완료한다.After the wire bonding is completed, a molding process of encapsulating the semiconductor chip with an epoxy molding compound (EMC) is performed. After the molding is completed, the solder ball is attached to the bottom surface of the circuit board, and then a reflow (heat treatment) process is performed. Reflow) is used to securely solder the solder ball to the package body and then test to complete the ball grid array package fabrication.

도 1은 종래 기술에 따른 적층된 볼 그리드 어레이 패키지의 단면도이다.1 is a cross-sectional view of a stacked ball grid array package according to the prior art.

상기 완료된 볼 그리드 어레이 패키지(10)의 용량을 늘리기 위해서는 상기 패키지(10)에 상기 공정을 통해 완성된 또 다른 패키지 단품(20)과 단품(30)을, 도 1에 도시된 바와 같이, 다수 적층 및 연결하여 사용할 수 있다. 이때, 상기 연결 공정은 상기 솔더볼 어레이 패키지 단품(10)(20)(30) 제작 시, 회로기판 길이를 패키지 몸체보다 길게 설계하여 상기 여분의 회로기판 부위에 솔더 볼(40)을 부착시킴으로써 상기 솔더볼 어레이 패키지 단품(10)(20)(30)들을 고정시킨다.In order to increase the capacity of the completed ball grid array package 10, another package single piece 20 and single piece 30 completed through the process are stacked on the package 10, as shown in FIG. And can be used in connection. At this time, the connection process is designed to make the length of the circuit board longer than the package body when the solder ball array package unit 10, 20, 30, the solder ball 40 by attaching the solder ball 40 to the extra circuit board area The array package unit 10, 20, 30 is fixed.

그러나, 종래의 기술에서는 회로기판 길이가 몰딩체에 비해 길게 연장된 형태로 설계됨에 따라 측면으로의 공간을 많이 차지하는 문제점이 있었다.However, according to the related art, the circuit board length is designed to extend longer than the molding, and thus has a problem of occupying a lot of space on the side surface.

이에 본 발명은 상기 종래의 문제점을 해결하기 위해 안출된 것으로, 볼 그리드 어레이 패키지의 크기를 소형화하여 다수개 적층할 수 있는 반도체 패키지의 적층방법을 제공함에 그 목적이 있다.Accordingly, an object of the present invention is to provide a method of stacking a semiconductor package that can be stacked in a plurality by miniaturizing a ball grid array package.

도 1은 종래 기술에 따른 적층된 볼 그리드 어레이 패키지의 단면도.1 is a cross-sectional view of a stacked ball grid array package according to the prior art.

도 2a 내지 도 2c는 본 발명의 제 1실시예에 따른 반도체 패키지를 제조하기 위한 적층순서도.2A to 2C are stacking flowcharts for manufacturing a semiconductor package according to the first embodiment of the present invention.

도 3a 내지 도 3c는 본 발명의 제 2실시예에 따른 반도체 패키지를 제조하기 위한 적층순서도.3A to 3C are stacking flowcharts for manufacturing a semiconductor package according to a second embodiment of the present invention.

상기 목적을 달성하기 위한 본 발명의 반도체 패키지의 적층방법은 상면에는 제 1 및 제 2몰딩체가 형성되고 하면에는 제 1 및 제 2도전성 볼이 부착되며, 측면으로는 연장된 형태의 제 1및 제 2연결부를 가진 제 1 및 제 2회로기판을 포함한 제 1 및 제 2패키지를 제공하는 단계와, 제 1 및 제 2몰딩체를 덮도록 제 1 및 제 2연결부를 폴딩시키는 단계와, 폴딩된 제 1연결부 상면에 제 2도전성 볼이 제거된 제 2회로기판의 저면을 부착시키는 단계를 포함한 것을 특징으로 한다.In the stacking method of the semiconductor package of the present invention for achieving the above object, the first and second molding bodies are formed on the upper surface, and the first and second conductive balls are attached to the lower surface, and the first and second sides are extended to the side. Providing first and second packages including first and second circuit boards having second connections, folding the first and second connections to cover the first and second moldings, and folding the first and second packages. And attaching a bottom surface of the second circuit board on which the second conductive ball is removed to the first connection part.

이하, 본 발명의 바람직한 실시예를 첨부된 도면을 참조하여 상세히 설명하면 다음과 같다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 2a 내지 도 2c는 본 발명의 제 1실시예에 따른 반도체 패키지를 제조하기 위한 적층순서도이다.2A to 2C are stacking flowcharts for manufacturing a semiconductor package according to a first embodiment of the present invention.

본 발명의 제 1실시예에 따른 반도체 패키지의 적층방법은, 도 2a에 도시된 바와 같이, 먼저 제 1 볼그리드 어레이 패키지(100)를 제공한다. 이때, 제 1볼그리드 어레이 패키지(100)은 상면에는 반도체 칩(미도시)이 몰딩된 제 1몰딩체(104)가 형성되고 저면에는 제 1도전성 볼(106)이 부착되며 일측면에는 연장된 형태의 제 1연결부(103)를 가진 제 1회로기판(102)를 포함한 구조를 가진다.In the stacking method of the semiconductor package according to the first embodiment of the present invention, as shown in FIG. 2A, first, a first ball grid array package 100 is provided. In this case, the first ball grid array package 100 has a first molding body 104 formed with a semiconductor chip (not shown) formed on the upper surface thereof, and a first conductive ball 106 attached to the bottom thereof and extended on one side thereof. It has a structure including a first circuit board 102 having a first connecting portion 103 in the form.

이어서, 도 2b에 도시된 바와 같이, 상기 제 1연결부(103)를 폴딩(folding)하여 제 1몰딩체(104)의 일측면 및 상면 전체를 덮는 후, 상기 구조의 제 1볼 그리드 어레이 패키지(100)에 테스트를 실시한다. 이때, 상기 제 1몰딩체(104)와 폴딩된 제 1연결부(103) 사이에는 에폭시(epoxy)(미도시)를 개재시키어 부착력을 향상시킨다.Subsequently, as illustrated in FIG. 2B, the first connection part 103 is folded to cover the entire one side and the top surface of the first molding body 104, and then the first ball grid array package having the structure ( 100). At this time, an epoxy (not shown) is interposed between the first molding member 104 and the folded first connector 103 to improve adhesion.

그 다음, 도 2c에 도시된 바와 같이, 상기 제 2볼그리드 어레이 패키지(200) 및 제 3볼그리드 어레이 패키지(300)의 제 2 및 제 3연결부(203)(303)를 폴딩시키어 제 2및 제 3몰딩체(204)(304)의 일측면 및 상면 전체를 감싼 후, 상기 구조의 제 2및 제 3볼그리드 어레이 패키지(200)(300)에 테스트를 실시한다. 이때, 상기 제 2및 제 3볼그리드 어레이 패키지(200)(300)은, 제 1볼그리드 어레이 패키지와 동일한 구조로, 반도체 칩(미도시)이 몰딩된 제 2및 제 3몰딩체(204)(304)가 형성되고 저면에는 제 2및 제 3도전성 볼(206)(306)이 부착되며 일측면에는 연장된 형태의 제 2및 제 3연결부(203)(303)를 가진 제 2및 제 3회로기판(202)(302)를 포함한 구조를 가진다. 또한, 제 1,제 2 및 제 3연결부의 재질로는 도전성 테이프(conductive tape)를 사용한다.Next, as shown in FIG. 2C, the second and third connectors 203 and 303 of the second ball grid array package 200 and the third ball grid array package 300 are folded to form the second and third connections. After wrapping one side and the entire upper surface of the third molding bodies 204 and 304, the second and third ball grid array packages 200 and 300 of the structure are tested. In this case, the second and third ball grid array packages 200 and 300 have the same structure as the first ball grid array package, and the second and third molding bodies 204 in which semiconductor chips (not shown) are molded. The second and third conductive balls 206 and 306 are formed on the bottom, and the second and third conductive balls 206 and 306 are attached to one side thereof, and the second and third connecting parts 203 and 303 of the extended shape are formed on one side thereof. It has a structure including a circuit board 202, 302. In addition, a conductive tape is used as a material of the first, second and third connection portions.

이 후, 상기 테스트가 완료된 제 2 및 제 3볼그리드 어레이 패키지 (200) (300)의 제 2 및 제 3도전성 볼(206)(306)을 제거한다.Thereafter, the second and third conductive balls 206 and 306 of the second and third ball grid array packages 200 and 300 are completed.

이어서, 상기 제 1볼그리드 어레이 패키지(100)의 폴딩된 제 1연결부(103) 상에 제 2볼그리드 어레이 패키지(200)의 제 2회로기판(202)을 적층하고 나서, 마찬가지의 방법으로, 상기 제 2볼그리드 어레이 패키지(200)의 폴딩된 제 2연결부(203) 상에 제 3볼그리드 어레이 패키지(300)의 제 3회로기판(302)을 적층 한다. 이때, 상기 폴딩된 제 1및 제 2연결부(103)(203)와 제 2및 제 3회로기판(202)(302)의 저면 사이에 솔더 페이스트(solder paste), ACF(Antisotropic Conductive Film) 또는 ACP(Anisotropic Conductive Paste) 중 어느 하나의 접착제(400)을 개재시킴으로써 제 1, 제 2 및 제 3볼그리드 어레이 패키지(100)(200)(300) 간의 부착력을 향상시킨다.Subsequently, after stacking the second circuit board 202 of the second ball grid array package 200 on the folded first connector 103 of the first ball grid array package 100, The third circuit board 302 of the third ball grid array package 300 is stacked on the folded second connector 203 of the second ball grid array package 200. At this time, a solder paste, an isotropic conductive film (ACF), or an ACP is formed between the folded first and second connectors 103 and 203 and the bottom of the second and third circuit boards 202 and 302. By interposing the adhesive 400 of any one of (Anisotropic Conductive Paste) to improve the adhesion between the first, second and third ball grid array package 100, 200, 300.

도 3a 내지 도 3c는 본 발명의 제 2실시예에 따른 반도체 패키지를 제조하기 위한 적층순서도이다.3A to 3C are stacking flowcharts for manufacturing a semiconductor package according to a second embodiment of the present invention.

본 발명의 제 2실시예에 따른 반도체 패키지의 적층방법은 본 발명의 제 1실시예와 동일하나, 도 3a에 도시된 바와 같이, 제 1 볼그리드 어레이 패키지(100)의 제 1연결부(103a)(103b)가 양측면에 연장된 형태를 가진다. 따라서, 도 3b에 도시된 바와 같이, 상기 형태를 가진 제 1연결부(103a)(103b)를 폴딩시키어 제 1회로기판(102)의 양측면 및 상면을 덮는다.The stacking method of the semiconductor package according to the second embodiment of the present invention is the same as the first embodiment of the present invention, but as shown in FIG. 3A, the first connection part 103a of the first ball grid array package 100 is provided. 103b has a form extended to both sides. Accordingly, as shown in FIG. 3B, the first connection portions 103a and 103b having the above shapes are folded to cover both side surfaces and the top surface of the first circuit board 102.

또한, 도 3c에 도시된 바와 같이, 상기와 동일한 방법으로 제 2볼그리드 어레이 패키지(200) 및 제 3볼그리드 어레이 패키지(300)의 제 2 및 제 3연결부(203a)(203b)(303a)(303b)를 폴딩시키어 제 2및 제 3몰딩체(204)(304)의 양측면 및 상면을 덮는다.3C, the second and third connectors 203a, 203b, 303a of the second ball grid array package 200 and the third ball grid array package 300 are operated in the same manner as described above. 303b is folded to cover both side surfaces and top surfaces of the second and third molding bodies 204 and 304.

이어서, 상기 제 1볼그리드 어레이 패키지(100)의 폴딩된 제 1연결부(103a)(103b) 상에 제 2볼그리드 어레이 패키지(200)의 제 2회로기판(202)을 적층하고 나서, 마찬가지의 방법으로, 상기 제 2볼그리드 어레이 패키지(200)의 폴딩된 제 2연결부(203a)(203b) 상에 제 3볼그리드 어레이 패키지(300)의 제 3회로기판(302)을 적층한다.Subsequently, the second circuit board 202 of the second ball grid array package 200 is stacked on the folded first connectors 103a and 103b of the first ball grid array package 100. By way of example, the third circuit board 302 of the third ball grid array package 300 is stacked on the folded second connectors 203a and 203b of the second ball grid array package 200.

본 발명의 제 1 및 제 2실시예에서는 볼 그리드 어레이 패키지 단품을 3층으로 적층시킨 것을 예로 하여 설명하였지만, 3층 그 이상으로도 적층이 가능하다.In the first and second embodiments of the present invention, the ball grid array package has been described as an example in which three single layers are stacked, but three or more layers can be stacked.

이상에서와 같이, 본 발명에서는 먼저 도전성 테이프를 사용하여 패키지의 측면 및 상면을 감싼 후, 상기 구조를 가진 다수의 패키지를 각각 적층함으로써 패키지가 차지하는 부피를 효과적으로 줄일 수 있다. 따라서, 동일 부피 내에 보다 많은 패키지를 적층할 수 있다.As described above, in the present invention, first, by wrapping the side and the top surface of the package using a conductive tape, by stacking a plurality of packages having the above structure can effectively reduce the volume occupied by the package. Thus, more packages can be stacked in the same volume.

기타, 본 발명은 그 요지를 일탈하지 않는 범위에서 다양하게 변경하여 실시할 수 있다.In addition, this invention can be implemented in various changes within the range which does not deviate from the summary.

Claims (8)

상면에는 제 1 및 제 2몰딩체가 형성되고 하면에는 제 1 및 제 2도전성 볼이 부착되며, 측면으로는 연장된 형태의 제 1및 제 2연결부를 가진 제 1 및 제 2회로기판을 포함한 제 1 및 제 2패키지를 제공하는 단계와,First and second molding bodies are formed on the upper surface, and the first and second conductive balls are attached to the lower surface, and the first and second circuit boards having the first and second connection parts extending from the side. And providing a second package; 상기 제 1 및 제 2몰딩체를 덮도록 상기 제 1 및 제 2연결부를 폴딩시키는 단계와,Folding the first and second connectors to cover the first and second moldings; 상기 폴딩된 제 1연결부 상면에 상기 제 2도전성 볼이 제거된 제 2회로기판의 저면을 부착시키는 단계를 포함한 것을 특징으로 하는 반도체 패키지의 적층방법.And attaching a bottom surface of the second circuit board from which the second conductive ball is removed to an upper surface of the folded first connector. 제 1항에 있어서, 상기 제 1 및 제 2연결부는 상기 제 1 및 제 2회로기판의 일측에 형성하는 것을 특징으로 하는 반도체 패키지의 적층방법.The method of claim 1, wherein the first and second connectors are formed on one side of the first and second circuit boards. 제 1항에 있어서, 상기 폴딩단계에서 상기 제 1 및 제 2연결부는 상기 제 1 및 제 2몰딩체의 측면 전부 및 상면의 일부를 덮는 것을 특징으로 하는 반도체 패키지의 적층방법.The method of claim 1, wherein in the folding step, the first and second connection parts cover all of the side surfaces and a part of the upper surface of the first and second molding bodies. 제 1항에 있어서, 상기 제 1 및 제 2연결부는 상기 제 1 및 제 2회로기판의 양측에 형성하는 것을 특징으로 하는 반도체 패키지의 적층방법.The method of claim 1, wherein the first and second connectors are formed on both sides of the first and second circuit boards. 제 1항에 있어서, 상기 폴딩단계에서 상기 제 1 및 제 2연결부는 상기 제 1 및 제 2몰딩체의 측면 및 상면을 전부 덮는 것을 특징으로 하는 반도체 패키지의 적층방법.The method of claim 1, wherein in the folding step, the first and second connectors cover the side surfaces and the top surfaces of the first and second molding bodies. 제 1항에 있어서, 상기 제 1 및 제 2몰딩체와 상기 폴딩된 제 1 및 제 2연결부 사이에 솔더 페이스트, ACF 또는 ACP중 어느 하나를 개재시키는 것을 특징으로 하는 반도체 패키지의 적층방법.The method of claim 1, wherein a solder paste, an ACF, or an ACP is interposed between the first and second moldings and the folded first and second connectors. 제 1항에 있어서, 상기 폴딩 공정 후에, 상기 제 2도전성 볼을 제거하는 단계를 추가하는 것을 특징으로 하는 반도체 패키지의 적층방법.The method of claim 1, further comprising removing the second conductive balls after the folding process. 제 1항에 있어서, 상기 제 1,제 2 및 제 3연결부는 도전성 테이프인 것을 특징으로 하는 반도체 패키지의 적층방법.The method of claim 1, wherein the first, second, and third connectors are conductive tapes.
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KR100780691B1 (en) * 2006-03-29 2007-11-30 주식회사 하이닉스반도체 Folding chip planr stack package

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