KR20030044444A - 차동 선형 증폭기 - Google Patents
차동 선형 증폭기 Download PDFInfo
- Publication number
- KR20030044444A KR20030044444A KR1020010075186A KR20010075186A KR20030044444A KR 20030044444 A KR20030044444 A KR 20030044444A KR 1020010075186 A KR1020010075186 A KR 1020010075186A KR 20010075186 A KR20010075186 A KR 20010075186A KR 20030044444 A KR20030044444 A KR 20030044444A
- Authority
- KR
- South Korea
- Prior art keywords
- input signal
- input
- bias current
- differential
- current source
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G1/00—Details of arrangements for controlling amplification
- H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
- H03G1/0035—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements
- H03G1/007—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements using FET type devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45197—Pl types
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G1/00—Details of arrangements for controlling amplification
- H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
- H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
- H03G1/0023—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier in emitter-coupled or cascode amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45492—Indexing scheme relating to differential amplifiers the CSC being a pi circuit and the resistor being implemented by one or more controlled transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
Description
Claims (5)
- 정입력신호 및 부입력신호를 입력 받는 입력부;상기 입력부의 일측에 제공되며, 바이어스 전류를 제공하기 위한 바이어스 전류원;상기 입력부의 타측에 제공되며, 상기 정입력신호 및 부입력신호에 대응하여 정출력단과 부출력단 사이에 출력 레벨 차를 제공하는 로드부;상기 바이어스 전류원과 상기 입력부 사이에 접속되며, 상기 정입력신호를 게이트 입력으로 하고 이득제어신호를 기판 바이어스 전압으로 사용하는 제1 MOS 트랜지스터; 및상기 바이어스 전류원과 상기 입력부 사이에 접속되며, 상기 부입력신호를 게이트 입력으로 하고 상기 이득제어신호를 기판 바이어스 전압으로 사용하는 제2 MOS 트랜지스터를 구비하는 차동 선형 증폭기.
- 제1항에 있어서,상기 로드부는 공급전원에 연결되며, 상기 바이어스 전류원은 접지전원에 연결된 것을 특징으로 하는 차동 선형 증폭기.
- 제 1 항에 있어서,상기 입력부는,상기 로드부와 상기 바이어스 전류원 사이에 제공되며, 상기 정입력신호를 게이트 입력으로 하는 제3 MOS 트랜지스터와,상기 로드부와 상기 바이어스 전류원 사이에 제공되며, 상기 부입력신호를 게이트 입력으로 하는 제4 MOS 트랜지스터를 구비하는 것을 특징으로 하는 차동 선형 증폭기.
- 제1항에 있어서,상기 제1 및 제2 MOS 트랜지스터는 백바이어스를 인가받는 제1 웰에 제공되는 것을 특징으로 하는 차동 선형 증폭기.
- 제3항에 있어서,상기 제1 및 제2 MOS 트랜지스터는 상기 백바이어스를 인가받지 않는 제2 웰에 제공되는 것을 특징으로 하는 차동 선형 증폭기.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2001-0075186A KR100413182B1 (ko) | 2001-11-30 | 2001-11-30 | 차동 선형 증폭기 |
US10/039,542 US6605996B2 (en) | 2001-11-30 | 2001-12-31 | Automatically gain controllable linear differential amplifier using variable degeneration resistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2001-0075186A KR100413182B1 (ko) | 2001-11-30 | 2001-11-30 | 차동 선형 증폭기 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030044444A true KR20030044444A (ko) | 2003-06-09 |
KR100413182B1 KR100413182B1 (ko) | 2003-12-31 |
Family
ID=19716477
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2001-0075186A KR100413182B1 (ko) | 2001-11-30 | 2001-11-30 | 차동 선형 증폭기 |
Country Status (2)
Country | Link |
---|---|
US (1) | US6605996B2 (ko) |
KR (1) | KR100413182B1 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100804546B1 (ko) * | 2005-08-26 | 2008-02-20 | 인티그런트 테크놀로지즈(주) | 선형성을 개선한 차동 증폭회로 |
KR100824772B1 (ko) * | 2006-10-16 | 2008-04-24 | 한국과학기술원 | 바디-소스 교차 커플링을 이용한 차동증폭기 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7081796B2 (en) * | 2003-09-15 | 2006-07-25 | Silicon Laboratories, Inc. | Radio frequency low noise amplifier with automatic gain control |
US7049875B2 (en) * | 2004-06-10 | 2006-05-23 | Theta Microelectronics, Inc. | One-pin automatic tuning of MOSFET resistors |
US7457605B2 (en) * | 2004-09-10 | 2008-11-25 | Silicon Laboratories, Inc. | Low noise image reject mixer and method therefor |
US7167053B2 (en) * | 2004-10-29 | 2007-01-23 | International Business Machines Corporation | Integrated circuit amplifier device and method using FET tunneling gate current |
KR100664309B1 (ko) | 2005-02-18 | 2007-01-04 | 삼성전자주식회사 | 가변 이득 차동 증폭기, 이에 사용되는 가변 축퇴 임피던스조절장치, 및 가변 축퇴 임피던스 조절 방법 |
TW200906055A (en) * | 2007-07-27 | 2009-02-01 | Rafael Microelectronics Inc | Low noise amplify |
TW200906118A (en) * | 2007-07-31 | 2009-02-01 | Univ Nat Taiwan | Self-mixing receiver and method thereof |
US7609112B2 (en) * | 2008-02-01 | 2009-10-27 | Analog Devices, Inc. | Boosted tail-current circuit |
US9748900B2 (en) * | 2015-12-30 | 2017-08-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Low noise amplifier |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4628276A (en) | 1983-12-15 | 1986-12-09 | Matsushita Graphic Communications Systems, Inc. | Logarithmically linearly controlled variable gain amplifier |
US5384501A (en) * | 1990-06-15 | 1995-01-24 | Kabushiki Kaisha Toshiba | Integration circuit including a differential amplifier having a variable transconductance |
JP2892287B2 (ja) * | 1994-02-04 | 1999-05-17 | 松下電器産業株式会社 | 演算増幅器 |
JP2556293B2 (ja) * | 1994-06-09 | 1996-11-20 | 日本電気株式会社 | Mos ota |
US5572166A (en) | 1995-06-07 | 1996-11-05 | Analog Devices, Inc. | Linear-in-decibel variable gain amplifier |
US5642078A (en) * | 1995-09-29 | 1997-06-24 | Crystal Semiconductor Corporation | Amplifier having frequency compensation by gain degeneration |
JP3486072B2 (ja) * | 1997-04-25 | 2004-01-13 | 株式会社東芝 | 可変利得増幅器 |
US6218892B1 (en) * | 1997-06-20 | 2001-04-17 | Intel Corporation | Differential circuits employing forward body bias |
KR100284024B1 (ko) * | 1997-07-29 | 2001-03-02 | 윤종용 | 저전압 씨모오스 연산 증폭기 회로 및 그것을 구비한 샘플 앤드 홀드 회로 |
US6278321B1 (en) * | 1999-10-21 | 2001-08-21 | Infineon Technologies Corporation | Method and apparatus for an improved variable gain amplifier |
US6316997B1 (en) * | 2000-03-23 | 2001-11-13 | International Business Machines Corporation | CMOS amplifiers with multiple gain setting control |
-
2001
- 2001-11-30 KR KR10-2001-0075186A patent/KR100413182B1/ko active IP Right Grant
- 2001-12-31 US US10/039,542 patent/US6605996B2/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100804546B1 (ko) * | 2005-08-26 | 2008-02-20 | 인티그런트 테크놀로지즈(주) | 선형성을 개선한 차동 증폭회로 |
KR100824772B1 (ko) * | 2006-10-16 | 2008-04-24 | 한국과학기술원 | 바디-소스 교차 커플링을 이용한 차동증폭기 |
Also Published As
Publication number | Publication date |
---|---|
KR100413182B1 (ko) | 2003-12-31 |
US20030102916A1 (en) | 2003-06-05 |
US6605996B2 (en) | 2003-08-12 |
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