KR20030039118A - Manufacturing Furnace for Ceramic Elctronic Components - Google Patents

Manufacturing Furnace for Ceramic Elctronic Components Download PDF

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Publication number
KR20030039118A
KR20030039118A KR1020010070055A KR20010070055A KR20030039118A KR 20030039118 A KR20030039118 A KR 20030039118A KR 1020010070055 A KR1020010070055 A KR 1020010070055A KR 20010070055 A KR20010070055 A KR 20010070055A KR 20030039118 A KR20030039118 A KR 20030039118A
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South Korea
Prior art keywords
tunnel
gas supply
setter
furnace
main body
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KR1020010070055A
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Korean (ko)
Inventor
후루야마사미
이고은
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주식회사 신명
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Priority to KR1020010070055A priority Critical patent/KR20030039118A/en
Publication of KR20030039118A publication Critical patent/KR20030039118A/en

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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
    • F27B9/04—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity adapted for treating the charge in vacuum or special atmosphere
    • F27B9/045—Furnaces with controlled atmosphere
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
    • F27B9/30—Details, accessories, or equipment peculiar to furnaces of these types
    • F27B9/3077—Arrangements for treating electronic components, e.g. semiconductors
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
    • F27B9/30—Details, accessories, or equipment peculiar to furnaces of these types
    • F27B9/40—Arrangements of controlling or monitoring devices

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Furnace Details (AREA)
  • Tunnel Furnaces (AREA)

Abstract

PURPOSE: A furnace for manufacturing ceramic electronic components is provided to supply uniform atmospheric gas into setter stacked in multistage by installing a plurality of gas supply pipes penetrated into the furnace chamber from left and right furnace walls of the body of tunnel furnace. CONSTITUTION: The furnace comprises a tunnel furnace body part (10) in which a furnace chamber (11) having a certain space is formed so that a setter (30) on which non-calcined ceramic formed bodies (20) are stacked is carried into the furnace chamber (11); a heating element (40) mounted on the tunnel furnace body part (10) to sinter the non-calcined ceramic formed bodies (20) by a certain temperature process while the setter (30) is being carried to the tunnel furnace body part (10); gas supply pipes (50) penetrated into left and right furnace walls of the tunnel furnace body part (10) so that they are connected to supply an atmospheric gas into the tunnel furnace body part (10); and a control part (60) installed on the gas supply pipes (50) to control the amount of the atmospheric gas introduced into the gas supply pipes (50), wherein a plurality of the gas supply pipes (50) are penetratingly connected to the left and right furnace walls of the tunnel furnace body part (10).

Description

세라믹 전자부품 제조용로 {Manufacturing Furnace for Ceramic Elctronic Components}Manufacturing Furnace for Ceramic Elctronic Components

본 발명은 세라믹 전자부품 제조용로에 관한 것으로 더욱 상세하게는 세라믹 전자부품을 가공하는 공정에서 제조용로 내부에 다단으로 적층된 세터위에 놓인 피소성물에 적정량의 분위기가스를 균일하게 분사할 수 있도록 발명된 것이다.The present invention relates to a ceramic electronic component manufacturing furnace, and more particularly, to inject an appropriate amount of atmospheric gas uniformly onto the object to be placed on the setter laminated in multiple stages inside the manufacturing furnace in the process of processing the ceramic electronic component. will be.

일반적으로 세라믹 전자부품이 제조되는 방법에 있어서, 미소성 세라믹 성형체는 세라믹 전자제품이 요구되는 특성을 얻기 위하여 세터위에 적재되어 소성로에 반송하여 분위기 가스를 상기 소성로 내로 공급하여 분사하는 공정을 거친다.In general, in the method of manufacturing a ceramic electronic component, the unbaked ceramic molded body is loaded on a setter, conveyed to a calcination furnace, and supplied with an atmosphere gas into the calcination furnace in order to obtain desired characteristics of the ceramic electronic product.

그리고, 상기한 분위기 가스는 수소를 주성분으로 하여 가연성과 환원성의 특성을 가져 금속대를 표면에 산화피막을 생성시키지 않은 상태로 어닐링등과 같은 열처리를 행할 수 있는 중성가스이다.In addition, the atmosphere gas is a neutral gas capable of performing heat treatment such as annealing, etc. with hydrogen as a main component and having flammability and reducibility characteristics, without forming an oxide film on the surface of the metal band.

한편, 통상적으로 상기 미소성 세라믹 성형체가 반송되는 소성로는 터널 형상의 로내 일측 입구로 부터 재료를 수레 또는 컨베이어로 송입하고, 타측 입구로 부터는 화염을 불어넣어 재료를 연속적으로 소성하여 대량생산이 가능한 터널로(Tunnel furnace)가 사용된다.On the other hand, the kiln in which the unbaked ceramic molded body is usually conveyed is fed into a wheelbarrow or conveyor from one inlet of the tunnel-shaped furnace, and a flame is blown from the other inlet to continuously fire the material to mass produce the tunnel. Tunnel furnaces are used.

그리고, 세라믹 전자부품이 제조되는 과정에 사용되는 터널로는 도 1에서 도시한 바와 같이 미소성 세라믹 성형체(20')가 적재된 세터(30')가 내부로 반송되는 소정공간의 로실(11)이 형되어 있는 튜널로 본체부(10')와;As the tunnel used in the process of manufacturing the ceramic electronic component, as illustrated in FIG. 1, the furnace chamber 11 having a predetermined space in which the setter 30 ′ on which the unbaked ceramic molded body 20 ′ is loaded is conveyed to the inside. A main body portion 10 'having a tunnel formed therein;

상기 튜널로 본체부(10')에 장착되어 상기한 세터(30')가 상기 튜널로 본체부(10')로 반송되는 중에 소정의 온도 프로세스에 의해 미소성 세라믹 성형체(20')를 소결하기 위한 발열체(40')와;Sintering the unfired ceramic formed body 20 'by a predetermined temperature process while the setter 30' is mounted to the body portion 10 'by the tunnel and is conveyed to the body portion 10' by the tunnel. A heating element 40 'for;

상기 튜널로 본체부(10')의 좌우 로벽에 관통되어 결합하여 이 튜널로 본체부(10') 내부로 분위기 가스를 공급하는 가스공급파이프(50)와;A gas supply pipe 50 which penetrates through the left and right furnace walls of the main body portion 10 'with the tunnel and supplies atmospheric gas into the main body portion 10' with the tunnel;

상기 가스공급파이프(50')에 설치되어 이 가스공급파이프(50')내로 유동되는 분위기가스양을 조절하는 제어부(60')로 구성되어있다.And a control unit 60 'installed in the gas supply pipe 50' to adjust the amount of atmospheric gas flowing into the gas supply pipe 50 '.

그러나 상기한 바와 같이 구성된 종래의 튜널로 내부에 미소성 세라믹 성형체가 적재된 세터를 반송하여 로내에 단관으로 구비된 가스공급파이프로 분위기 가스를 공급할 경우 상기한 미소성 세라믹 성형체에 균일한 가스를 방사할 수 없는 문제점이 있었던 것이다.However, when the atmosphere is supplied to the gas supply pipe provided with the single tube in the furnace by conveying the setter in which the unbaked ceramic formed body is loaded into the conventional tunnel configured as described above, the uniform gas is radiated to the unbaked ceramic formed body. There was a problem that could not be done.

즉, 상기한 미소성 세라믹 성형체가 적재되는 세터는 대량생산을 위하여 다단으로 적층되어 튜널로 내부로 반송되므로 단관으로 구비된 가스공급파이프로 분위기 가스를 공급할 경우에는 한층의 세터에만 분위기 가스가 집중되어 각 미소성 세라믹 성형체에 골고루 가스가 분사되지 못하여 세라믹 전자부품이 요구하는 특성을 얻기 어려운 폐단이 있었던 것이다.That is, the setter on which the unbaked ceramic molded body is loaded is stacked in multiple stages for mass production and conveyed into the tunnel, so when the atmosphere gas is supplied to the gas supply pipe provided with a single tube, the atmospheric gas is concentrated only in one setter. The gas was not evenly sprayed on each of the unbaked ceramic molded bodies, and thus there was a closed end that was difficult to obtain the characteristics required by the ceramic electronic component.

따라서, 불량율이 증대되어 작업효율이 저하되는 문제점이 발생되었던 것이다.Therefore, the problem that the failure rate is increased and the work efficiency is lowered.

본 발명의 목적은 튜널로 본체의 좌우 로벽에서 로실내부로 관통된 다수의 가스공급파이프를 구비하여 다단으로 적층된 세터에 균일한 분위기 가스를 공급할 수 있도록 한 세라믹 전자부품 제조용로를 제공하는 데 있다.SUMMARY OF THE INVENTION An object of the present invention is to provide a ceramic electronic component manufacturing system which is capable of supplying a uniform atmosphere gas to a multi-layer setter having a plurality of gas supply pipes penetrating into the furnace chamber from the left and right furnace walls of the main body. .

본 발명의 다른 목적은 다단으로 적층된 세터에 각 층별로 적정한 양의 분위기 가스를 공급할 수 있도록 하여 세터에 적재된 미소성 세라믹 성형체를 요구되는 특성에 맞추어 제조하여 세라믹 전자부품의 불량율을 현저히 감소시키는 세라믹 전자부품 제조용로를 제공하는 데 있다.Another object of the present invention is to supply an appropriate amount of atmospheric gas to each setter laminated in a multi-stage to manufacture an unbaked ceramic molded body loaded in the setter according to the required characteristics to significantly reduce the defective rate of ceramic electronic components To provide a ceramic electronic component manufacturing.

도 1 은 종래의 세라믹 전자부품 제조용로의 단면도.1 is a cross-sectional view of a conventional ceramic electronic component manufacturing.

도 2 는 본 발명의 세라믹 전자부품 제조용로의 단면도.2 is a cross-sectional view of a ceramic electronic component for production of the present invention.

도 3 은 다단으로 적층된 세터에 미소성 세라믹 성형체를 적재한 것을 도시한 정면도.Fig. 3 is a front view showing the unbaked ceramic formed body stacked on a multi-stage setter;

*도면 중 주요 부호에 대한 설명** Description of the major symbols in the drawings *

10 - 튜널로 본체부11 - 로실10-Tunnel body part 11-Rossil

12 - 이송수단13 - 대판12-Means of Transport13-Large Plate

20 - 미소성 세라믹 성형체30 - 세터20-unbaked ceramic molding 30-setter

40 - 발열체50 - 가스공급파이프40-Heating element 50-Gas supply pipe

60 - 제어부70 - 제어밸브60-Control Unit 70-Control Valve

이러한 본 발명의 목적은 미소성 세라믹 성형체(20)가 적재된 세터(30)가 내부로 반송되는 소정공간의 로실(11)이 형성되어 있는 튜널로 본체부(10)와;The object of the present invention is a tunnel body body 10 is formed with a furnace chamber 11 of a predetermined space in which the setter 30 on which the unbaked ceramic molded body 20 is loaded is formed;

상기 튜널로 본체부(10)에 장착되어 상기한 세터(30)가 상기 튜널로 본체부(10)로 반송되는 중에 소정의 온도 프로세스에 의해 미소성 세라믹 성형체(20)를 소결하기 위한 발열체(40)와;Heating element 40 for sintering the unfired ceramic formed body 20 by a predetermined temperature process while the setter 30 is mounted to the body portion 10 by the tunnel and is conveyed to the body portion 10 by the tunnel. )Wow;

상기 튜널로 본체부(10)의 좌우 로벽에 관통되어 결합하여 이 튜널로 본체부(10) 내부로 분위기 가스를 공급하는 가스공급파이프(50)와;A gas supply pipe 50 which penetrates through the left and right furnace walls of the main body unit 10 by the tunnel, and supplies atmospheric gas into the main body unit 10 by the tunnel;

상기 가스공급파이프(50)에 설치되어 이 가스공급파이프(50)내로 유동되는 분위기가스양을 조절하는 제어부(60)로 구성된 것에 있어서,In the gas supply pipe 50 is provided with a control unit 60 for adjusting the amount of atmospheric gas flowing into the gas supply pipe 50,

상기 튜널로 본체부(10)의 좌, 우 로벽에는 상기 가스공급파이프(50)가 다수개로 관통하여 결합되어 달성된다.The gas supply pipe 50 is coupled to the left and right walls of the tunnel body main body 10 through a plurality of couplings.

즉, 다수로 적층된 세터(30)가 튜널로 본체부(10)내의 로실(11)에 반송되어 상기 세터(30)에 적재된 미소성 세라믹 성형체(20)에 분위기 가스를 공급할 경우 상기 분위기 가스가 로실(11)로 관통된 다수의 가스공급파이프(50)에 의해 분사되므로 다수로 적층된 세터(30)의 각층에 균일한 양의 가스를 공급할 수 있는 것이다.That is, a plurality of setters 30 stacked in a tunnel are conveyed to the furnace chamber 11 in the main body 10 to supply the atmosphere gas to the unbaked ceramic formed body 20 loaded in the setter 30. Since it is injected by a plurality of gas supply pipes 50 penetrated into the furnace chamber 11, it is possible to supply a uniform amount of gas to each layer of the setter 30 stacked in a large number.

본 발명의 바람직한 실시예를 첨부된 도면에 의하여 상세히 설명하면 다음과 같다.When described in detail with reference to the accompanying drawings a preferred embodiment of the present invention.

도 1 은 종래의 세라믹 전자부품 제조용로의 내부를 도시한 단면도로서, 튜널로 본체부의 내부 로실(11)로 분위기 가스를 공급하는 가스공급파이프가 단관으로 구비된 상태를 나타내고 있다.FIG. 1 is a cross-sectional view showing the inside of a conventional ceramic electronic component manufacturing furnace, showing a state in which a gas supply pipe for supplying an atmosphere gas to the inner furnace chamber 11 of the main body part is provided with a single tube.

도 2는 본 발명의 세라믹 전자부품 제조용로의 내부를 도시한 단면도로서, 튜널로 본체부의 내부 로실(11)로 분위기 가스를 공급하는 가스공급파이프가 좌우에 동일한 위치에 다수개 관통되어 결합된 상태를 도시한 것이다.FIG. 2 is a cross-sectional view illustrating an interior of a ceramic electronic component manufacturing furnace of the present invention, in which a plurality of gas supply pipes for supplying an atmosphere gas to the inner furnace chamber 11 of the body part through a tunnel are coupled to the left and right at the same position on the left and right sides thereof; It is shown.

도 3은 미소성 세라믹 성형체가 적재된 세터를 도시한 정면도로서, 대량생산을 위해 상기 세터는 다단으로 적층되어 이송용 대판의 상면에 위치되는 상태를 도시한 것이다.3 is a front view showing a setter on which an unbaked ceramic molded body is loaded, and shows the state in which the setters are stacked in multiple stages and placed on the upper surface of the transfer plate for mass production.

즉, 도 2 ∼ 도 3에서 도시한 바와 같이 튜널로 본체부(10) 내부에는 소정의 공간으로 이루어진 로실(11)이 형성되어 있다.That is, as shown in FIGS. 2 to 3, a furnace chamber 11 having a predetermined space is formed inside the main body portion 10 by the tunnel.

그리고, 상기 튜널로 본체부(10)내의 로실(11)에는 일측 입구로 부터 수레 또는 컨베이어등과 같은 이송수단(12)으로 재료가 송입되어 상기 튜널로 본체부(10)에 장착된 발열체(40)에 의해 가열된다.Then, the material is fed into the furnace chamber 11 in the tunnel body main body 10 from a side entrance to a conveying means 12 such as a wagon or a conveyor, and the heating element 40 mounted to the body body 10 by the tunnel. Heated by).

또한, 상기 발열체(40)는 상기 튜널로 본체부(10)내의 상부와 하부에 양측에 설치되어 로실(11)내부을 균일한 온도로 상승시킬 수 있도록 되어있다.In addition, the heating element 40 is installed at both sides of the upper and lower portions of the main body portion 10 by the tunnel so as to raise the inside of the furnace chamber 11 to a uniform temperature.

한편, 상기한 튜널로 본체부(10)내의 로실(11)에 반송되는 미소성 세라믹 성형체(20)는 다단으로 적층된 세터(30)에 적재되며, 미소성 세라믹 성형체(20)를 적재한 상기 세터(30)는 대판(13)의 상면에 위치된다.On the other hand, the unbaked ceramic formed body 20 conveyed to the furnace chamber 11 in the body portion 10 by the above-described tunnel is loaded on the setter 30 stacked in multiple stages, and the unbaked ceramic formed body 20 is loaded. The setter 30 is located on the upper surface of the base plate 13.

그리고, 상기 튜널로 본체부(10) 좌우 로벽에는 상기한 바와 같이 다단으로 적층된 세터(30)에 적재되어 튜널로 본체부(10)내부로 반송되는 미소성 세라믹 성형체(20)에는 세라믹 전자제품이 요구되는 특성을 얻기 위하여 분위기 가스를 공급하기 위하여 다수의 가스공급파이프(50)가 관통되어 결합된다.In addition, the unbaked ceramic formed body 20 which is loaded on the setter 30 stacked in multiple stages as described above on the left and right furnace walls of the tunnel body main body part 10 and conveyed into the body part 10 in the tunnel is ceramic electronic products. In order to obtain this desired characteristic, a plurality of gas supply pipes 50 are penetrated and coupled to supply an atmosphere gas.

즉, 튜널로 본체부(10) 내부로 반송되는 미소성 세라믹 성형체(20)가 다단으로 적층된 세터(30)에 단관만으로는 각층에 균일한 분위기 가스가 흐르기 어렵기 때문에 다수개의 가스공급파이프(50)를 다단으로 적층된 세터(30)의 각층 높이로 관통시켜 분위기 가스를 분사시키므로서 미소성 세라믹 성형체(20)가 요구하는 특성을 동일하게 얻을 수 있도록 하는 것이다.That is, since the uniform atmosphere gas does not easily flow to each layer by the single tube only in the setter 30 in which the unbaked ceramic molded body 20 conveyed into the main body 10 by a tunnel is stacked in multiple stages, a plurality of gas supply pipes 50 Permeate) through the height of each layer of the setter 30 laminated in multiple stages to inject an atmosphere gas so that the characteristics required by the unbaked ceramic molded body 20 can be obtained in the same manner.

한편, 미소성 세라믹 성형체(20)가 적재되는 세터(30)는 수평으로 좌우 대칭으로 다단으로 적층되므로, 상기한 다수의 가스공급파이프(50)는 튜널로 본체부(10) 좌우 로벽에 동일한 위치에 다단으로 튜널로 본체부(10) 내의 로실(11)로 관통시켜 결합하는 것이 바람직하다.On the other hand, because the setter 30 on which the unfired ceramic molded body 20 is loaded is stacked in multiple stages horizontally and symmetrically, the plurality of gas supply pipes 50 are the same positions on the left and right walls of the main body 10 as a tunnel. It is preferable to penetrate through the furnace chamber 11 in the main body portion 10 in a multi-stage tunnel.

또한, 튜널로 본체부(10) 내의 로실(11)로 관통되는 다수의 가스공급파이프(50)에는 각각 유량을 제어할 수 있는 제어밸브(70)를 설치하여 튜널로 본체부(10) 내부로 공급되는 분위기 가스의 양을 각 층별로도 조정이 가능하도록 하는 것이 바람직하다.In addition, a plurality of gas supply pipes 50 penetrating into the furnace chamber 11 in the main body unit 10 by a tunnel are provided with control valves 70 for controlling the flow rate, respectively, to the inside of the main body unit 10 by the tunnel. It is preferable to make it possible to adjust the quantity of the atmospheric gas supplied for each layer.

그리고, 상기 제어밸브(70)는 사용자가 용이하게 조정할 수 있도록 제어부(60)에 연결되어 각각의 제어밸브(70)를 제어할 수 있도록 한다.The control valve 70 is connected to the control unit 60 so that the user can easily adjust the control valve 70 to control each control valve 70.

이러한 본 발명의 구성에 의하면, 튜너로 본체부 내의 로실(11)로 다수의 가스공급파이프(50)가 관통되어 결합하므로 상기 로실(11)로 분위기 가스를 공급할 경우 다단으로 적층된 세터(30)에 적재된 미소성 세라믹 성형체(20)에 균일한 가스를 공급할 수 있는 것이다.According to the configuration of the present invention, since a plurality of gas supply pipes 50 are penetrated and coupled to the furnace chamber 11 in the main body by a tuner, when the atmosphere gas is supplied to the furnace chamber 11, the multi-stage setter 30 is stacked. It is possible to supply a uniform gas to the unbaked ceramic formed body 20 loaded on the substrate.

따라서, 세라믹 전자부품이 요구되는 특성을 균일하게 얻을 수 있는 것이다.Therefore, the characteristics required of the ceramic electronic component can be obtained uniformly.

그러므로, 완성된 세라믹 전자부품의 불량율을 현저히 저하시킬 수 있어, 제조원가의 절감효과와 상품성 증대효과가 동시에 유발되는 매우 유용한 발명인 것이다.Therefore, it is possible to significantly reduce the defective rate of the finished ceramic electronic component, and it is a very useful invention in which the effect of reducing the manufacturing cost and increasing the merchandise quality are caused at the same time.

Claims (3)

미소성 세라믹 성형체(20)가 적재된 세터(30)가 내부로 반송되는 소정공간의 로실(11)이 형성되어 있는 튜널로 본체부(10)와;A main body portion 10 in which a furnace chamber 11 is formed in a predetermined space in which the setter 30 on which the unfired ceramic molded body 20 is loaded is formed; 상기 튜널로 본체부(10)에 장착되어 상기한 세터(30)가 상기 튜널로 본체부(10)로 반송되는 중에 소정의 온도 프로세스에 의해 미소성 세라믹 성형체(20)를 소결하기 위한 발열체(40)와;Heating element 40 for sintering the unfired ceramic formed body 20 by a predetermined temperature process while the setter 30 is mounted to the body portion 10 by the tunnel and is conveyed to the body portion 10 by the tunnel. )Wow; 상기 튜널로 본체부(10)의 좌우 로벽에 관통되어 결합하여 이 튜널로 본체부(10) 내부로 분위기 가스를 공급하는 가스공급파이프(50)와;A gas supply pipe 50 which penetrates through the left and right furnace walls of the main body unit 10 by the tunnel, and supplies atmospheric gas into the main body unit 10 by the tunnel; 상기 가스공급파이프(50)에 설치되어 이 가스공급파이프(50)내로 유동되는 분위기가스양을 조절하는 제어부(60)로 구성된 것에 있어서,In the gas supply pipe 50 is provided with a control unit 60 for adjusting the amount of atmospheric gas flowing into the gas supply pipe 50, 상기 튜널로 본체부(10)의 좌, 우 로벽에는 상기 가스공급파이프(50)가 다수개로 관통하여 결합되는 것을 특징으로 하는 세라믹 전자부품 제조용로.The gas supply pipe 50 is coupled to the left and right walls of the tunnel body main body portion 10 through a plurality of ceramic electronic component manufacturing, characterized in that the coupling. 청구항 제 1 항에 있어서, 상기 가스공급파이프(50)는 다단으로 적층된 세터(30)의 각층 높이로 튜널로 본체부(10) 좌우 로벽의 동일한 위치에 다수개 관통시켜 결합하는 것을 특징으로 하는 세라믹 전자부품 제조용로.The method of claim 1, wherein the gas supply pipe 50 is coupled to a plurality of through the same position of the left and right wall of the main body portion 10 to the tunnel at the height of each layer of the setter 30 is stacked in multiple stages. For manufacturing ceramic electronic components. 청구항 제 1 항에 있어서, 상기 튜널로 본체부(10)의 좌, 우 로벽에 다수개로 관통하여 결합되는 가스공급파이프(50)에는 각각 유량을 조정할 수 있는 제어밸브(70)가 설치되는 것을 특징으로 하는 세라믹 전자부품 제조용로.The gas supply pipe 50 coupled to the left and right walls of the tunnel body main body 10 in plural numbers is provided with a control valve 70 for adjusting the flow rate. For manufacturing ceramic electronic components.
KR1020010070055A 2001-11-12 2001-11-12 Manufacturing Furnace for Ceramic Elctronic Components KR20030039118A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100558445B1 (en) * 2003-11-10 2006-03-10 삼성전기주식회사 A continuous sintering furnace having pulse type gas inlet system
CN113847806A (en) * 2021-10-20 2021-12-28 四川大学 Sintering furnace and sintering device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100558445B1 (en) * 2003-11-10 2006-03-10 삼성전기주식회사 A continuous sintering furnace having pulse type gas inlet system
CN113847806A (en) * 2021-10-20 2021-12-28 四川大学 Sintering furnace and sintering device

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