KR20030001252A - Device and Method for Polishing Substrate and Semiconductor Device - Google Patents

Abstract

PURPOSE: To miniaturize a CMP apparatus to reduce the area occupied thereby so that no limitations are encountered with the location when it is installed in a factory shop and the like. CONSTITUTION: In the substrate lapping apparatus to lap the surface of the substrate 1 by rotating both the substrate 1 and the platen 2 together under the condition that the substrate 1 and the polishing cloth 4 adhered to the platen 2 are made to come closely into contact, the moving guide to place the platen 2 on the substrate 1 and move the platen 2 in the direction horizontal to the substrate 1 is provided. The platen 2 is thus made to move relatively to the substrate 1, and the size of the lapping apparatus can be approximately the same as that of the substrate 1.

Description

Substrate Polishing Device, Substrate Polishing Method and Semiconductor Device {Device and Method for Polishing Substrate and Semiconductor Device}

The present invention relates to a substrate polishing apparatus and a substrate polishing method, and is particularly suitable for applying to polishing of a semiconductor substrate such as a silicon wafer having a diameter of 300 mm.

In recent semiconductor devices, in order to improve the flatness of films such as an interlayer insulating film laminated on a semiconductor substrate, a planarization technique by a CMP (chemical mechanical polishing) method is generally used.

9 is a schematic diagram showing the configuration of a conventional CMP apparatus. As shown in Fig. 9, in the conventional CMP apparatus, a carrier head 103 on which a wafer 101 such as silicon to be polished is mounted is placed on the platen 102 to which the polishing cloth 104 is attached. . A downward force Dnwn Force is applied to the carrier head 103, whereby the surface of the wafer 101 and the polishing cloth 104 closely contact each other. Then, the slurry 105 is supplied from the slurry supply port 108 onto the polishing cloth 104, and both of the carrier head 103 and the platen 102 are rotated to polish the surface of the wafer 101. .

Wafer 101 is attached to carrier head 103 via backing film 106. The backing film 106 holds the wafer 101 and serves as a cushion for absorbing vibration between the carrier head 103 and the wafer 101. In addition, a retaining ring 107 is attached to the periphery of the carrier head 103 so as to surround the wafer 101. The retaining ring 107 serves to prevent the wafer 101 from protruding out during polishing and to control the polishing profile at the end of the wafer 101.

However, in the above-described conventional CMP apparatus, the area of the upper surface of the platen 102 needs to be made very large compared with the area of the wafer 101, resulting in a problem that the occupied area of the CMP apparatus is significantly increased.

In particular, in the CMP apparatus corresponding to the wafer 101 such as silicon having a diameter of 300 mm, the diameter of the platen 102 becomes about 740 mm to 780 mm, and the occupied area is larger than that of the CMP apparatus corresponding to the 200 mm diameter wafer. There was a problem of being enlarged.

In addition, the grinding | polishing by a CMP apparatus may be performed by using several grinding | polishing cloth 104 from which hardness differs by process. In this case, it is necessary to prepare a plurality of platens 102 and carrier heads 103 corresponding to the plurality of hardness abrasive cloths 104. Therefore, there is also a drawback that the occupied area of the CMP apparatus is increased corresponding to the number of the polishing cloths 104.

As the material of the platen 102, materials such as stainless steel (SUS), ceramics, and the like are used. In particular, in the apparatus corresponding to the 300 mm wafer, the enlargement of the diameter cannot be avoided. For example, in the above-mentioned platen 102 having a diameter of about 740 mm, the weight is limited to the installation site of the apparatus such as several tons and the need to reinforce the floor.

In addition, as another problem, in the conventional apparatus, it is necessary to replace many consumables in accordance with the operation of the apparatus. For example, in the apparatus shown in Fig. 9, downward force is mechanically applied to the carrier head 103 to bring the wafer 101 and the polishing cloth 104 into close contact. For this reason, the backing film 106 must be interposed between the carrier head 103 and the wafer 101 in order to suppress the occurrence of vibration and shaking in the wafer 101 during polishing and to improve the uniformity of polishing. I needed to deploy. Depending on the number of wafers 101 to be polished, the durability and vibration absorbing ability of the backing film 106 are lowered, resulting in deterioration of the uniformity of polishing. For this reason, it is necessary to replace the backing film 106 every time the wafer 101 of about 200 sheets is polished, costing tens of thousands of yen as a part value every time it is replaced, and stopping the apparatus operation. There was no increase in manufacturing costs.

In addition, the retaining ring 107 attached to the periphery of the carrier head 103 is also a consumable, and a cost of several hundred thousand yen is incurred as a part value every time it is replaced. In addition, since the apparatus cannot be operated at the time of maintenance, there arises a problem that the manufacturing cost accompanying this increases.

In addition, although the polishing cloth 104 attached to the platen 102 is also a consumable, in an apparatus corresponding to a 300 mm wafer, it is necessary to make the polishing cloth 104 large in accordance with the size of the platen 102 described above. There is. For this reason, especially in the apparatus corresponding to 300 mm in diameter, the part cost of the polishing cloth 104 is rising, and the problem of the part cost and manufacturing cost raises further every time it replaces.

In addition, since the slurry 105 supplied on the polishing cloth 104 reaches the back surface from the surface of the wafer 101 when it is being polished in the middle, a problem occurs that the back surface of the wafer 101 is contaminated in the slurry 105. Was doing. Such contamination adhering to the back surface of the wafer 101 has caused generation of particles and contaminants in other processing apparatuses. This caused a problem of deterioration of reliability in subsequent steps. In addition, when the slurry 105 adhering to the back surface of the wafer 101 is dropped during transport, a problem arises in that the wafer is dropped onto another wafer surface in the cassette, or the contamination of the transfer robot causes contamination to other wafers. there was.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems, and the first object of the present invention is to reduce the occupied area of the device by achieving miniaturization of the CMP device, so that the device is not restricted by the place when installing the device in a factory or the like. There is.

Moreover, the 2nd objective of this invention is to reduce the consumable part in a CMP apparatus, and to suppress the cost increase which arose by the replacement of a consumable part to the minimum.

Moreover, the 3rd objective of this invention is to suppress that a slurry remains on the back surface of a wafer at the time of grinding | polishing, and to suppress the generation | occurrence | production of the damage, such as secondary contamination.

1 is a schematic cross-sectional view showing the configuration of a substrate polishing apparatus according to a first embodiment of the present invention.

2 is a schematic plan view showing a configuration of a substrate polishing apparatus according to a first embodiment of the present invention.

3 is a plan view showing the configuration of an air supply means of the substrate polishing apparatus according to the first embodiment of the present invention.

4 is a schematic diagram showing a configuration and processing procedure of a substrate polishing apparatus according to a second embodiment of the present invention.

Fig. 5 is a schematic diagram showing the configuration and processing procedure of the substrate polishing apparatus according to the second embodiment of the present invention.

Fig. 6 is a schematic diagram showing the configuration and processing procedure of the substrate polishing apparatus according to the second embodiment of the present invention.

Fig. 7 is a schematic diagram showing the configuration and processing procedure of the substrate polishing apparatus according to the second embodiment of the present invention.

Fig. 8 is a plan view showing a state in which the size of the substrate polishing apparatus according to the second embodiment of the present invention is compared with the size of the apparatus of the comparative example.

9 is a schematic cross-sectional view showing a conventional substrate polishing apparatus.

<Explanation of symbols for the main parts of the drawings>

1: wafer

2: platen

3: moving guide

4, 4a, 4b: abrasive cloth

5: EDP line

6: wafer support

7: air supply means

7a to 7e: air supply port

8: pure water supply port

9: pure

10: slurry line

A substrate polishing apparatus of the present invention is a substrate polishing apparatus for polishing a surface of a substrate by bringing a substrate and a polishing pad into close contact with each other and rotating the substrate and the polishing pad together, wherein the polishing pad disposed on the substrate and the polishing pad are provided. It comprises a moving means for moving in a horizontal direction with respect to the substrate.

The apparatus may further include substrate supporting means for supporting the substrate and gas supply means for injecting a gas toward a rear surface of the substrate, provided under the substrate supported by the substrate supporting means.

In addition, the gas supply means further has a plurality of gas supply ports, and further includes gas amount adjusting means for adjusting the gas injection amount of the gas supply port.

In addition, the plurality of gas supply ports are arranged concentrically with respect to the center of the substrate.

Further, further comprising polishing amount detecting means for detecting the polishing amount on the surface of the substrate, wherein the gas amount adjusting means increases the gas injection amount of the gas supply port corresponding to the region having a small polishing amount.

In addition, the substrate support means supports the outer edge of the substrate and rotates the substrate by transmitting the rotation of the substrate support means to the substrate.

In addition, the substrate polishing method of the present invention is a method of polishing a surface of a substrate by bringing a substrate into close contact with a polishing pad and rotating the substrate and the polishing pad together, wherein the polishing pad and the surface of the substrate disposed above the substrate are polished. Contacting the substrate, rotating the substrate and the polishing pad together, and moving the polishing pad in the horizontal direction within the area of the substrate surface in a state where the polishing pad and the substrate are in close contact with each other. It is.

In the step of bringing the polishing pad into close contact with the substrate surface, the substrate surface is brought into close contact with the polishing pad by injecting a gas toward the back surface of the substrate.

The gas injection amount is adjusted for each predetermined region set in the substrate planar region.

Further, the predetermined area is set to be concentric with respect to the center of the substrate.

The method further includes a step of detecting the polishing amount on the surface of the substrate, wherein the gas injection amount of the region having a small polishing amount is increased in comparison with other regions.

Moreover, the semiconductor device of this invention is manufactured using the said board | substrate grinding apparatus.

In addition, the semiconductor device of the present invention is manufactured using the substrate polishing method.

<First Embodiment>

FIG. 1 is a plan view showing a CMP apparatus as a first embodiment of the present invention, and FIG. 2 is a schematic cross-sectional view of the CMP apparatus of FIG. As shown in Figs. 1 and 2, in the CMP apparatus, the polishing platen 2 is disposed on the wafer 1, and the wafer 1 is rotated together by rotating the wafer 1 and the platen 2 together. The surface is polished.

As shown in Fig. 2, the polishing cloth 4 is attached to the lower portion of the platen 2, and the polishing pad is constituted by the polishing cloth 4 and the platen 2. And the platen 2 is movable along the movement guide 3 by the movement guide (moving means) 3 arrange | positioned so that it may pass through the center top of the wafer 1. Therefore, the entire surface on the wafer 1 is polished by rotating the wafer 1 and the platen 2 simultaneously and moving the platen 2 from the outside of the wafer 1 to the center or from the center to the outside. can do. For this reason, in the apparatus of 1st Embodiment, the area of the platen 2 can be made significantly smaller than the area of the wafer 1, and the occupation area of the whole apparatus can be suppressed to the same extent as the area of the wafer 1. .

In the platen 2 and in the movement guide 3, the slurry line 10 and the EDP line 5 as a grinding | polishing amount detection means are provided. Then, the slurry is supplied onto the wafer 1 through the slurry line 10. In addition, the EDP line 5 is used to detect the polishing amount by photodetection and to determine whether or not polishing has been performed to a desired place. The polishing amount may be detected by detecting a change in the rotational torque of the platen 2.

Three wafer support portions 6 are provided around the wafer 1 to support the wafer 1 and to rotate the wafer 1. As shown in Fig. 2, the wafer support portion 6 is formed with a groove portion (concave portion) 6a having a small diameter at the contact portion of the wafer 1, and the outer peripheral portion of the wafer 1 is this groove portion 6a. The wafer 1 is horizontally supported by entering. Then, by rotating the shaft 6b of the wafer support 6, the rotation of the wafer support 6 is transmitted to the wafer 1 so that the wafer 1 rotates.

As shown in FIG. 2, air (gas) supply means 7 is provided below the wafer 1. 3 is a plan view of the air supply means 7 seen from above. As shown in FIG. 3, the air supply holes 7a to 7e are provided in the air supply means 7 in a concentric circle upwardly toward the wafer 1. The air supply means 7 injects air toward the wafer 1 from each of the air supply ports 7a to 7e. As a result, the wafer 1 is pushed upward, and the wafer 1 and the platen 2 are brought into close contact with each other. In addition, by applying a downward force to the platen 2 from the movement guide 3 side, the adhesion between them can be further improved.

Thus, by pushing up the wafer 1 using air, the wafer 1 and the polishing cloth 4 can be reliably stuck, and the wafer 1 can be reliably polished. In addition, since the wafer 1 is pushed upward by the air, and the structure does not exist between the air supply means 7 and the wafer 1, the vibration generated in the wafer 1 at the time of polishing is effectively prevented. Can absorb.

In addition, as shown in Fig. 3, the air supply means 7 is divided into five air supply ports 7a to 7e, so that the pressing force of the wafer 1 against the polishing cloth 4 is varied according to the area. I can regulate it. The amount of polishing can be varied in the plane of the wafer 1 according to the pressing force. For example, when increasing the polishing amount of the wafer 1 in the region corresponding to the air supply port 7a, the air injection amount at the air supply port 7a is different from the air supply ports 7b to 7e. It is made larger than the injection amount in. Thereby, the grinding | polishing amount of the wafer 1 in the area | region corresponding to the air supply port 7a can be increased.

Therefore, the polishing amount can be adjusted for each region of the wafer 1 corresponding to the air supply ports 7a to 7e, and the wafer 1 is adjusted in accordance with the profile detection result of the polishing amount by the EDP line 5. Polishing amount can be made uniform in the whole area | region. In addition, the air supply amount in each of the air supply ports 7a to 7e is adjusted by gas amount adjusting means (not shown).

In addition, since the air is supplied from the back surface of the wafer 1, it is possible to prevent the slurry from returning to the back surface of the wafer 1, thereby preventing contamination of particles and the like.

As described above, according to the first embodiment of the present invention, the platen 2 is disposed on the wafer 1 so as to be movable horizontally, and the polishing is performed while the relative positions of the platen 2 and the wafer 1 are moved. Since the surface area of the platen 2 can be reduced significantly with respect to the area of the wafer 1, the surface area of the platen 2 can be reduced. Therefore, the occupied area of the CMP apparatus can be reduced to the same extent as that of the wafer 1, and the occupied area of the apparatus can be significantly reduced. In addition, by reducing the platen 2, the area of the polishing cloth 4 can be reduced, and the component cost of the polishing cloth 4 as a consumable can be reduced.

In addition, by greatly reducing the area of the platen 2, the gravity of the CMP apparatus can be greatly reduced, and it is possible to suppress that the installation site is restricted.

Further, the wafer 1 is brought into close contact with the polishing cloth 4 by the air supply means 7, and a plurality of air supply ports 7a to 7e are provided in the air supply means 7, so that the polishing profile According to this, the amount of air injected from the air supply ports 7a to 7e can be adjusted, so that polishing in the surface of the wafer 1 can be made uniform.

In addition, since the wafer 1 and the polishing cloth 4 are brought into close contact with each other by air, the effect of not needing to provide a backing film for the role of the cushion in particular can also be obtained. In addition, since a plurality of wafer supports 6 are provided around the wafer 1 so as to be sandwiched in the horizontal direction, the wafer 1 can be prevented from protruding during polishing, so that no member is required to prevent the protrusion. The effect can be obtained.

In addition, since air is always injected into the back surface of the wafer 1 during polishing, it is possible to prevent the slurry from returning to the back surface of the wafer 1, and secondary contamination such as particles and contaminants such as particles when brought into another processing apparatus. In addition, since adhesion of the slurry to the back surface of the wafer 1 can be suppressed, the slurry adheres to the conveying device or another wafer even when the wafer 1 is transported between the processing apparatuses. You can be forced to throw it away.

In addition, as the arrangement of the air supply ports 7a to 7e, various arrangements such as block type and line type can be made in addition to the concentric circular arrangement as shown in FIG.

<2nd embodiment>

Next, a second embodiment of the present invention will be described with reference to Figs. 2nd Embodiment prepares two platen 2 of the CMP apparatus of 1st Embodiment, and grind | polishs using two types of polishing cloths 4.

In general, in order to obtain good flatness, polishing is performed using a hard polishing cloth. As a result, since the polishing cloth adheres only to the surface of the convex portion of the pattern and does not come into contact with the concave portion, only the convex portion can be polished to efficiently eliminate the step, but scratches are likely to occur on the polished surface.

As shown in Fig. 4, the apparatus according to the second embodiment is provided with two platens 2a and 2b. A relatively hard polishing cloth 4a is attached to one of the platens 2a, and a polishing cloth 4b that is softer than the polishing cloth 4a is attached to the other platen 2b. The structure of the movement guides 3a and 3b, the slurry line 10, the EDP line 5, the wafer support part 6, and the air supply means 7 to which each of the platens 2a and 2b are connected is the first embodiment. It is the same as form.

And in 2nd Embodiment, the platen 2a, 2b becomes movable along the movement guide 3, and the movement guide 3 itself moves in the direction orthogonal to the direction in which the movement guide 3 extends. It is possible.

Further, the movement guide 3 can also move in the up and down direction, and when the polishing is not performed, when the positions of the platens 2a and 2b for polishing the wafer 1 are replaced with each other, the platens 2a and 2b are replaced. ) Is moved upward to separate the polishing cloths 4a and 4b from the wafer 1.

Hereinafter, the grinding | polishing by the platen 2b is demonstrated, after grind | polishing by the platen 2a based on FIGS. 4-7. First, as shown in Figs. 4A and 4B, the movement guide 3a to which the platen 2a is connected is disposed so as to pass through the center of the wafer 1, The polishing cloth 4a attached to the ten 2a is brought into contact with the surface of the wafer 1. On the other hand, the moving guide 3b to which the platen 2b is connected is retracted to a position spaced apart from the center of the wafer 1, and the moving guide 3b is moved upward to move the polishing cloth 4b and the wafer 1 into place. )).

The wafer 1 is pushed upward by jetting air from the air supply means 7 to reliably bring the wafer 1 surface and the polishing cloth 4d into close contact. Thereafter, the slurry is supplied from the slurry line 10, the platen 2a and the wafer 1 are rotated at the same time, and polished by a hard polishing cloth 4a. Then, polishing is performed while detecting the end point by the EDP line 5, and polishing is stopped after predetermined amount polishing. In addition, as described in the first embodiment, the end point may be detected from the variation of the rotational torque of the platen 2a in addition to the detection using the EDP line 5.

Next, as shown in Figs. 5A and 5B, after the polishing by the hard polishing cloth 4a is finished, the air supply from the air supply means 7 is stopped, and the wafer ( After stopping the rotation of 1) and the platen 2a, the platen 2a is moved upward with the movement guide 3a.

Then, pure water 9 is supplied from the pure water supply port 8 to the surface of the wafer 1, and the slurry remaining on the surface of the wafer 1 is washed out.

As shown in Fig. 5B, the movement guide 3b is moved onto the center of the wafer 1, and the movement guide 3a is retracted to move the movement guide 3a and the movement guide 3b. Replace the position of.

Next, as shown in Figs. 6A and 6B, after replacing the positions of the movement guide 3a and the movement guide 3b, the polishing cloth 4b and the wafer 1 The surfaces are brought into contact with each other by bringing air from the air supply means 7. And the slurry is supplied from the slurry line 10, the wafer 1 and the platen 2b are rotated, and the polishing cloth 4b is polished. When polishing by the polishing cloth 4b, a slurry different from the slurry used in polishing by the polishing cloth 4a may be used.

At this time, by detecting the profile of the polishing amount by the polishing cloth 4a in advance by the EDP line 5, the air supply amount from the air supply ports 7a to 7b is adjusted to adjust the amount of polishing by the polishing cloth 4b. It is possible to perform polishing.

After polishing by the polishing cloth 4b is finished, the platen 2b is retracted from the wafer 1 as shown in Figs. 7A and 7B to finish polishing.

As described above, in the second embodiment, as in the first embodiment, the platen 2 is disposed on the wafer 1, and the area of the platen is significantly smaller than the area of the wafer 1, so that the two platens Even when tens 2a and 2b are provided, the apparatus can be configured to the same size as in the first embodiment.

8 is a plan view simultaneously showing the CMP apparatus of the second embodiment and a conventional CMP apparatus as a comparative example. 8A shows a CMP device of the second embodiment, and FIG. 8B shows a conventional CMP device.

As shown in Fig. 8A, in the apparatus of the second embodiment, the platens 2a and 2b are disposed on the wafer 1, and the platens 2a and 2b are placed on the wafer 1 as shown in Figs. Since the polishing is performed while moving relatively, the size of the entire apparatus can be as large as the size of the wafer 1. In the example of FIG. 8A, the device can be configured in a square shape of about 500 mm on one side with respect to the wafer 1 having a diameter of 300 mm. As mentioned above, this size is not limited by the number of platens. Therefore, even when two or more platens are arranged, the size of the entire apparatus can be as large as the size of the wafer 1.

On the other hand, in the conventional CMP apparatus as a comparative example, as shown in Fig. 8B, the platen 2 rotates under the wafer 1, so that the radius of the platen 2 is smaller than the diameter of the wafer 1; You need to make it bigger. For this reason, in order to comprise the apparatus corresponding to the wafer 1 of 300 mm in diameter, it is necessary to make the diameter of the platen 2 at least 600 mm or more, and it is necessary to make the apparatus into the square shape of 900 mm or more per side. have. In addition, in order to perform polishing using the two polishing cloths 2a and 2b as in the second embodiment, as shown in Fig. 8B, the platen 2 with the other polishing cloth is prepared side by side. It is necessary to double the size of the device (about 900 mm × 1800 mm). Therefore, according to the structure of 1st Embodiment and 2nd Embodiment, it becomes possible to significantly reduce the magnitude | size of the whole CMP apparatus.

In addition, since polishing is performed using two kinds of polishing cloths 4a and 4b when polishing the wafer 1, the step can be efficiently eliminated by polishing using the hard polishing cloth 4a. It is possible to suppress the occurrence of scratches on the surface of the convex portion of the pattern by polishing by the soft polishing cloth 4b.

In addition, when polishing with a hard polishing cloth 4a, the EDP line 5 can obtain the information of the polishing amount distribution in the surface of the wafer 1. And at the time of grinding | polishing by the soft polishing cloth 4b, the air amount supplied from each of the air supply ports 7a-7e can be adjusted based on distribution information of polishing amount. This makes it possible to equalize the polishing amount on the entire surface of the wafer 1.

Since this invention is comprised as demonstrated above, it exhibits the effect as shown below.

By arranging the polishing pad on the substrate and making the polishing pad relatively movable with respect to the substrate, the area of the polishing pad can be significantly reduced with respect to the substrate, and the device can be miniaturized and reduced in weight.

By providing gas injection means for injecting a gas toward the substrate under the substrate, the substrate and the polishing pad can be reliably brought into close contact with each other, and by using gas, the backing film as a cushioning material is unnecessary. Moreover, since it can suppress that a slurry reaches | attains the back surface of a board | substrate, generation | occurrence | production of secondary pollution, such as a particle, can be suppressed.

By enabling the injection amount of the gas in each of the plurality of gas supply ports to be adjustable, the pressing force between the substrate and the polishing pad can be varied for each region.

By arranging a plurality of gas supply ports concentrically with respect to the center of the substrate, the pressing force between the substrate and the polishing pad can be varied in the radial direction of the substrate.

By increasing the gas injection amount of the gas supply port corresponding to the area with a small amount of polishing, the polishing amount in the region can be increased to make the polishing amount uniform on the entire surface of the substrate.

By providing the board | substrate support part which supports the outer edge of a board | substrate and transmits rotation to a board | substrate, it can rotate a board | substrate, spraying gas on the back surface of a board | substrate.

Claims (13)

A substrate polishing apparatus which adheres a substrate to the polishing pad and rotates the substrate and the polishing pad simultaneously to polish the surface of the substrate, The polishing pad disposed on the substrate; And a moving means for moving said polishing pad in a horizontal direction with respect to said substrate. The apparatus of claim 1, further comprising: substrate support means for supporting the substrate; And a gas supply means which is provided under the substrate supported by the substrate support means and injects gas toward the back surface of the substrate. The substrate polishing apparatus according to claim 1 or 2, wherein the gas supply means has a plurality of gas supply ports, and further includes gas amount adjusting means for adjusting a gas injection amount of the gas supply port. 4. A substrate polishing apparatus according to claim 3, wherein the plurality of gas supply ports are arranged concentrically with respect to the center of the substrate. 5. The polishing apparatus according to claim 3 or 4, further comprising polishing amount detecting means for detecting the polishing amount on the substrate surface. And said gas amount adjusting means increases the gas injection amount of said gas supply port corresponding to a region having a small amount of polishing. The substrate polishing apparatus according to any one of claims 2 to 5, wherein the substrate support means supports the outer edge of the substrate and rotates the substrate by transmitting a rotation of the substrate support means to the substrate. Device. A method of polishing the substrate surface by bringing a substrate into close contact with the polishing pad and simultaneously rotating the substrate and the polishing pad; Contacting the polishing pad and the substrate surface disposed above the substrate, Simultaneously rotating the substrate and the polishing pad; And moving the polishing pad in a horizontal direction within an area of the substrate surface in a state in which the polishing pad and the substrate are in close contact with each other. The method of claim 7, wherein in the step of bringing the polishing pad into close contact with the substrate surface, And polishing the substrate surface and the polishing pad by injecting a gas toward the back surface of the substrate. The substrate polishing method according to claim 8, wherein the gas injection amount is adjusted for each predetermined region set in the substrate plane region. The substrate polishing method according to claim 9, wherein the predetermined region is set to be concentric with respect to the center of the substrate. The method of claim 9 or 10, further comprising the step of detecting the amount of polishing on the substrate surface, A substrate polishing method, characterized in that the gas injection amount of a region having a small polishing amount is larger than that of other regions. The semiconductor device manufactured using the board | substrate grinding apparatus in any one of Claims 1-6. The semiconductor device manufactured using the substrate grinding | polishing method in any one of Claims 7-11.