KR200266546Y1 - Photo apparatus - Google Patents

Abstract

The present invention relates to a photo device for preventing particles from falling into the chamber from an exhaust line of the photo device.

The photo device according to the present invention includes a chamber 22, a gas supply unit 28 for injecting a gas for organicizing the surface of the substrate 38 in the chamber 22, and one side of the chamber 22. An exhaust line 32 provided, a gas exhauster 24 for exhausting gas in the chamber 22 through the exhaust line 32, and an exhaust line 32 provided at an inlet side of the exhaust line 32; ) Is provided with an injection nozzle 37 for injecting ultra pure water (De-Ionized Water) 39 and an ultrapure water supply unit 36 for supplying ultrapure water 39 to the injection nozzle 37.

By such a configuration, by forcibly exhausting the gas in the AD chamber 22, DI 39 is supplied to decompose and remove foreign substances on the exhaust line 32, thereby preventing particles in the chamber. As a result, it is possible to prevent the pattern defects generated when the photoresist is patterned by foreign matter falling on the exhaust line 32 falls on the substrate 38. In addition, a separate cleaning operation for the exhaust line 32 is not necessary.

Description

Photo device {PHOTO APPARATUS}

The present invention relates to a manufacturing apparatus of a liquid crystal display device, and more particularly to a photo device to prevent particles falling into the chamber from the exhaust line of the photo device.

LCDs have advantages of small size, thinness, and low power consumption, and are being used as notebook PCs, office automation devices, and audio / video devices. In particular, an active matrix liquid crystal display device using a thin film transistor (hereinafter referred to as "TFT") as a switch element is suitable for displaying a dynamic image.

In an active matrix type liquid crystal display, an image corresponding to a video signal such as a television signal is displayed on a pixel matrix (Picture Element Matrix or Pixel Matrix) in which pixels are arranged at intersections of gate lines and data lines. Each of the pixels includes a liquid crystal cell that adjusts the amount of transmitted light according to the voltage level of the data signal from the data line. The TFT is provided at the intersection of the gate line and the data lines to switch the data signal to be transmitted to the liquid crystal cell in response to the scan signal from the gate line.

Referring to FIG. 1, a TFT formed over a substrate 18 is shown. The manufacturing process of the TFT is as follows. First, the gate electrode 1 and the gate line are deposited on the substrate 18 with a metal such as Al, Mo, Cr, or an alloy thereof, and then patterned by photolithography.

On the substrate 18 on which the gate electrode 1 is formed, a gate insulating film 3 made of an inorganic film such as SiNx or SiOx, and amorphous silicon (hereinafter referred to as "a-Si") on the gate insulating film 3 The semiconductor layer 5 and the ohmic contact layer 7 made of a-Si doped with n + ions are successively deposited. On the ohmic contact layer 7, a source electrode 9 and a drain electrode 11 made of metal such as Mo and Cr are formed. This source electrode 9 is patterned integrally with the data line.

The ohmic contact layer 7 exposed through the opening between the source electrode 9 and the drain electrode 11 is removed by dry etching or wet etching.

A protective film 13 made of SiNx or SiOx is deposited on the source electrode 9 and the drain electrode 11 to cover the TFT. Subsequently, a contact hole is formed on the protective film 13. The pixel electrode 15 made of indium tin oxide is coated so as to be connected to the drain electrode 11 through the contact hole.

During the TFT process, the gate electrode 1, the gate line, the source electrode 9, the source line, the drain electrode 11 and the pixel electrode 15, as well as the color filter and the black matrix (not shown) are photographed using photo equipment. It is patterned by the process of forming, exposing, and developing a resist. Here, since the bonding between the organic photoresist and the substrate 18, which is mostly inorganic, is not easy, the surface of the substrate 18 may be hexamethyldioxide before the photoresist is formed to improve the adhesion between the photoresist and the substrate 18. A process of organicizing the surface of the substrate 18 using silane (Hexa Methyl DiSiliane: hereinafter referred to as "HMDS") is performed. This will be described with reference to FIG. 2.

First, as shown in FIG. 2, the substrate 18 is mounted on the hot plate 10 in the adhesion chamber (hereinafter referred to as “AD chamber”) 2 of the photo device, and then the door of the AD chamber 2 is closed. By closing (not shown), the inside of the AD chamber 2 is kept airtight. At this time, the hot plate 10 will heat the substrate 18 to approximately 140 ℃ ~ 150 ℃.

Then, the ejector 4 is driven to exhaust the gas in the AD chamber 2 through the eject line 12 to reduce the pressure in the AD chamber 2. That is, the gas in the AD chamber 2 is supplied with compressed air from the air tank 14 to the ejector 4 from the air tank 14 during forced exhaust. In addition, a check valve 6 is installed on the exhaust line 12 adjacent to the AD chamber 2 to serve as a safety device for preventing the exhaust detention after pressure reduction and an abnormal pressure.

Nitrogen (N ₂ ) is then injected into the HMDS tank 4 to produce HMDS gas and open the valve 16 on the HMDS feed line 8a. The HMDS gas is then injected into the AD chamber 2 in the form of a bubble by the pressure difference between the HMDS tank 4 and the AD chamber 2.

The injected HMDS gas in the AD chamber 2 causes the surface of the substrate 18 to organicize from inorganic matter. As a result, the adhesion between the organic materialized substrate 18 and the photoresist is improved.

After a predetermined time has elapsed, the ejector 4 is driven to exhaust the HMDS gas in the AD chamber 2 through the exhaust line 12 to reduce the pressure in the AD chamber 2.

The gas in the AD chamber 2 is exhausted while the atmosphere is opened. This atmospheric opening continues until the pressure in the AD chamber 2 is equal to the atmospheric pressure. Finally, after opening the door of the AD chamber 2, the substrate 1 is taken out from the AD chamber 2.

In such a photo device, the exhaust gas is forcedly exhausted by using the ejector 4 which is supplied with compressed air after HMDS processing and processing in the AD chamber 2, and at this time, Mo oxide, ammonia ( Small foreign substances such as NH 3) fall from the exhaust line 12 to the substrate 18.

Such foreign matters falling on the substrate 18 may cause residual electrodes to remain in the photoresist film pattern, causing short-circuits between electrodes or causing spots to appear when displaying image data after the liquid crystal panel is completed.

Accordingly, it is an object of the present invention to provide a photo device to prevent particles from falling into the chamber from the exhaust line of the photo device.

1 is a cross-sectional view showing a conventional thin film transistor.

2 is a sectional view schematically showing a photo device;

3 is a cross-sectional view schematically showing a photo device according to the present invention.

4 is a cross-sectional view showing that the injection nozzle is installed in the exhaust line shown in FIG.

<Description of Symbols for Main Parts of Drawings>

2, 22: AD chamber 4, 24: ejector

6, 26: check valve 8, 28: HMDS tank

8a, 28a: HMDS supply line 9, 29: atmospheric open line

10, 30: hot plate 12, 32: exhaust line

14, 34: air tank 16, 26: valve

18, 38: substrate 39: DI

In order to achieve the above object, a photo device according to the present invention comprises a chamber 22, a gas supply unit 28 for injecting a gas for organicizing the surface of the substrate 38 in the chamber 22, and An exhaust line 32 provided at one side of the chamber 22, a gas exhauster 24 for exhausting the gas in the chamber 22 through the exhaust line 32, and an inlet side of the exhaust line 32. It is provided with an injection nozzle (37) for injecting ultra-pure water (De-Ionized Water; 39) in the exhaust line 32, and the ultra-pure water supply unit (36) for supplying ultra-pure water (39) to the injection nozzle (37) do.

Other objects and features of the present invention in addition to the above object will be apparent from the description of the embodiments with reference to the accompanying drawings.

Hereinafter, exemplary embodiments of the present invention will be described with reference to FIGS. 3 and 4.

Referring to FIG. 3, a photo device according to the present invention is configured to heat an adhesion chamber (hereinafter referred to as an “AD chamber”) 22 and a substrate 38 installed and seated inside the AD chamber 22. A hot plate 30, an HMDS tank 28 for supplying HMDS gas into the AD chamber 22, an atmospheric opening line 29 for maintaining the pressure in the AD chamber 22 at atmospheric pressure; And an ejector 24 installed at one point of an exhaust line 32 for exhausting the gas in the AD chamber 22 and exhausting the gas in the AD chamber 22, and depressurized by the ejector 24. An air tank 34 for injecting air and a DI supply unit 36 for supplying DI (De-Ionized Water) to the exhaust line 32 are provided.

The hot plate 30 is heated to always heat the substrate 38 to be seated. The HMDS tank 28 supplies the HMDS gas generated by the supplied nitrogen N22 into the AD chamber 22 in the form of a bubble.

External air is injected into the atmospheric opening line 29 to maintain the pressure in the AD chamber 22 after the HMDS treatment at atmospheric pressure. The ejector 24 serves to forcibly exhaust the pressure in the AD chamber 22 by using the compressed air supplied from the air tank 34.

The DI supply part 36 serves to remove foreign substances that are buried in the exhaust line 32. To this end, a DI supply line 36a is installed between the DI supply unit 36 and the exhaust line 32, and a DI valve 40 for controlling the supply of DI is provided at any point of the DI supply line 36a. Is installed.

The DI supply line 36a is installed with the injection nozzle 37 inserted into the exhaust line 32 adjacent to the AD chamber 22 as shown in FIG. The injection nozzle 37 removes foreign substances that are deposited on the exhaust line 32 by injecting DI when forcibly evacuating the gas inside the AD chamber 22 before and after the HMDS treatment. That is, DI injected by the injection nozzle 37 is sucked out by the forced pressure of the ejector 24 during forced exhaust and removes foreign matters buried in the exhaust line 32.

As described above, in the process procedure of the photo device according to the present invention, first, the substrate 38 is mounted on the hot plate 30 in the AD chamber 22, and then the door (not shown) of the AD chamber 22 is opened. By closing, the inside of the AD chamber 22 is kept airtight. At this time, the hot plate 30 will heat the substrate 38 to approximately 140 ℃ ~ 150 ℃.

Then, the ejector 24 is driven to exhaust the gas in the AD chamber 22 through the eject line 32 to reduce the pressure in the AD chamber 22. That is, the gas in the AD chamber 22 is supplied with compressed air from the air tank 34 to the ejector 24 at the time of forced exhaust.

In addition, a check valve 26 is installed on the exhaust line 32 adjacent to the AD chamber 22 to prevent exhaust detention after decompression and to act as a safety device for abnormal pressure.

Next, nitrogen (N ₂₂ ) is injected into the HMDS tank 28 to generate HMDS gas and open the DI valve 36 on the HMDS supply line 28a. The HMDS gas is then injected into the AD chamber 22 in the form of a bubble by the pressure difference in the HMDS tank 28 and the AD chamber 22.

The injected HMDS gas in the AD chamber 22 causes the surface of the substrate 38 to organicize from inorganic matter. As a result, the adhesion between the organic materialized substrate 38 and the photoresist is improved.

After a predetermined time has passed, the ejector 24 is driven to exhaust the HMDS gas in the AD chamber 22 through the exhaust line 32 to reduce the pressure in the AD chamber 22. At this time, Mo oxide, ammonia (NH 3), etc., by HMDS gas treatment are buried in the exhaust line 32. Mo oxide, ammonia (NH 3), etc. buried in the exhaust line 32 is removed using DI. Done.

In detail, the DI valve 40 is opened and the DI 39 is supplied from the DI supply unit 36 to the DI supply line 36a inserted into the exhaust line 32. As a result, DI 39 is supplied to the exhaust line 32 to remove foreign substances such as Mo oxide, ammonia (NH 3), and the like, which are buried in the exhaust line 32. This is because foreign matters such as Mo oxide and ammonia (NH 3) are easily decomposed to DI (39).

Then, the gas in the AD chamber 22 is exhausted while opening the atmosphere. This atmospheric opening continues until the pressure in the AD chamber 22 is equal to the atmospheric pressure. Finally, after opening the door of the AD chamber 22, the substrate 38 is taken out of the AD chamber 22.

In the photo device as described above, the DI 39 is supplied to the exhaust line 32 when the exhaust gas is forcedly exhausted by using the ejector 24 to which the compressed air is supplied after the HMDS treatment and the treatment in the AD chamber 22. ) Decomposes and removes foreign substances such as Mo oxide and ammonia (NH3).

As described above, the photo device according to the present invention disassembles and removes particles in the chamber by supplying the DI 39 when the gas in the AD chamber 22 is forcibly evacuated, thereby removing the foreign matter from the exhaust line 32. You can prevent it. As a result, it is possible to prevent the pattern defects generated when the photoresist is patterned by foreign matter falling on the exhaust line 32 falls on the substrate 38. In addition, a separate cleaning operation for the exhaust line 32 is not necessary.

Those skilled in the art will appreciate that various changes and modifications can be made without departing from the technical spirit of the present invention. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification but should be defined by the utility model registration claims.

Claims (1)

Chamber 22, A gas supply unit 28 for injecting a gas for organicizing the surface of the substrate 38 in the chamber 22; An exhaust line 32 installed at one side of the chamber 22, A gas exhauster 24 for exhausting gas in the chamber 22 through the exhaust line 32; An injection nozzle (37) installed at an inlet side of the exhaust line (32) to inject ultrapure water (39) into the exhaust line (32); Ultra-pure water supply unit 36 for supplying ultra-pure water (39) to the injection nozzle (37).