KR200205177Y1 - Nozzle structure of semiconductor sog coating construction - Google Patents
Nozzle structure of semiconductor sog coating construction Download PDFInfo
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- KR200205177Y1 KR200205177Y1 KR2019980019893U KR19980019893U KR200205177Y1 KR 200205177 Y1 KR200205177 Y1 KR 200205177Y1 KR 2019980019893 U KR2019980019893 U KR 2019980019893U KR 19980019893 U KR19980019893 U KR 19980019893U KR 200205177 Y1 KR200205177 Y1 KR 200205177Y1
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- rinse liquid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Coating Apparatus (AREA)
Abstract
본 고안은 반도체 에스오지 코팅장비의 노즐구조에 관한 것으로, 바디(21)의 상단부 외주면에 일정깊이의 린스액저장홈(30)을 형성하고, 그 린스액저장홈(30)과 린스액공급홀(26)이 연결되도록 린스액분지홀(31)을 형성하여, 리시버에서 노즐의 린스작업시에 린스액분지홀을 통하여 공급되는 린스액이 바디의 외주면을 따라 흘러내리면서 외주면에 부착된 이물질들을 제거하게 된다.The present invention relates to a nozzle structure of a semiconductor Eoji coating equipment, to form a rinse liquid storage groove 30 of a predetermined depth on the outer peripheral surface of the upper end of the body 21, the rinse liquid storage groove 30 and the rinse liquid supply hole The rinse liquid basin hole 31 is formed such that the rinse liquid branch hole 31 is connected, and the rinse liquid supplied through the rinse liquid basin hole during the rinsing operation of the nozzle in the receiver flows down along the outer circumferential surface of the body to remove foreign substances attached to the outer circumferential surface. Will be removed.
Description
본 고안은 반도체 에스오지 코팅장비의 노즐구조에 관한 것으로, 특히 노즐의 바디 외측에 부착되는 이물질까지 제거되도록 하여 코팅작업시 이물질에 의한 웨이퍼의 오염발생을 방지하도록 하는데 적합한 반도체 에스오지 코팅장비의 노즐구조에 관한 것이다.The present invention relates to a nozzle structure of a semiconductor sedge coating equipment, and in particular, to remove the foreign matter attached to the outside of the body of the nozzle to prevent contamination of the wafer by the foreign matter during coating work It's about structure.
도 1은 종래 반도체 에스오지 코팅장비의 구조를 보인 정면도로서, 도시된 바와 같이, 종래 반도체 에스오지 코팅장비는 웨이퍼(1)를 회전시키기 위한 회전척(2)의 상부에 노즐(3)이 설치되어 있고, 그 노즐(3)과 일정거리를 두고 리시버(5)가 설치되어 있다.Figure 1 is a front view showing the structure of a conventional semiconductor swo coating equipment, as shown, the conventional semiconductor swo coating equipment, the nozzle 3 is installed on top of the rotating chuck (2) for rotating the wafer (1) The receiver 5 is provided at a predetermined distance from the nozzle 3.
그리고, 상기 노즐(3)은 바디(6)의 상면에 연결되는 에스오지 공급라인(7)과 디스팬스 팁(8)이 연결되도록 바디(6)의 내측에 용액공급홀(9)이 형성되어 있고, 린스액 공급라인(10)과 디스팬스 팁(8)의 주변에 형성된 요홈부(11)가 연결되도록 린스액공급홀(12)이 형성되어 있다.In addition, the nozzle 3 has a solution supply hole 9 formed inside the body 6 such that the esotge supply line 7 connected to the upper surface of the body 6 and the dispensing tip 8 are connected to each other. The rinse liquid supply hole 12 is formed to connect the rinse liquid supply line 10 and the recess 11 formed around the dispensing tip 8.
상기와 같은 종래의 반도체 에스오지 코팅장비는 용액도포작업시에는 노즐(3)를 회전하는 웨이퍼(1)의 상측으로 이동하고, 에스오지 공급라인(7)을 통하여 에스오지 용액을 공급하며, 이와 같이 공급되는 에스오지 용액은 디스팬스 팁(8)을 통하여 웨이퍼(1)의 상면에 분사되고, 분사된 에스오지 용액은 웨이퍼(1)의 회전력에 의하여 일정두께로 도포된다.The conventional semiconductor esoteric coating equipment as described above moves the nozzle 3 to the upper side of the rotating wafer 1 during the solution coating operation, and supplies the esoteric solution through the esotge supply line 7, and The esoteric solution supplied together is sprayed onto the upper surface of the wafer 1 through the dispensing tip 8, and the sprayed esoteric solution is applied to a predetermined thickness by the rotational force of the wafer 1.
상기와 같은 용액도포작업을 진행하지 않을 때에는 노즐(3)을 이동하여, 리시버(5)의 상측 입구부에 삽입한 다음, 린스액 공급라인(10)을 통하여 린스액을 계속공급하면, 공급되는 린스액이 린스액공급홀(12)를 통하여 요홈부(11)로 공급되면서 디스팬스 팁(8)에 묻어 있는 에스오지 용액을 제거한다.When the solution coating operation as described above is not in progress, the nozzle 3 is moved and inserted into the upper inlet of the receiver 5, and then the rinse liquid is continuously supplied through the rinse liquid supply line 10, As the rinse liquid is supplied to the recess 11 through the rinse liquid supply hole 12, the sedge solution removed from the dispensing tip 8 is removed.
그러나, 상기와 같이 디스팬스 팁(8)에 부착되는 에스오지 용액이 제거되면서 다시 노즐(3)의 바디(6) 측면에 부착되어 용액도포작업시 웨이퍼(1)의 상면에 떨어지게 되어 이물질오염을 발생시키는 문제점이 있었다.However, as described above, while the Eoji solution attached to the dispensing tip 8 is removed, the Eoji solution is attached to the side of the body 6 of the nozzle 3 again and falls on the upper surface of the wafer 1 during the application of the solution. There was a problem that occurred.
상기와 같은 문제점을 감안하여 안출한 본 고안의 목적은 노즐에서 바디까지 린스액으로 린스하여 바디의 측면에 부착되어 있는 이물질을 제거하도록 하는데 적합한 반도체 에스오지 코팅장비의 노즐구조에 관한 것이다.The object of the present invention devised in view of the above problems relates to a nozzle structure of a semiconductor SOH coating equipment suitable for rinsing from the nozzle to the body with a rinse liquid to remove foreign substances attached to the side of the body.
도 1은 종래 반도체 에스오지 코팅장비의 구조를 보인 정면도.1 is a front view showing the structure of a conventional semiconductor Suji coating equipment.
도 2는 본 고안 반도체 에스오지 코팅장비의 노즐구조를 보인 정면도.Figure 2 is a front view showing a nozzle structure of the semiconductor Suji coating equipment of the present invention.
도 3은 본 고안 반도체 에스오지 코팅장비의 노즐구조를 보인 단면도.Figure 3 is a cross-sectional view showing a nozzle structure of the semiconductor Suji coating equipment of the present invention.
도 4는 본 고안의 노즐구조에서 바디를 린스하는 상태를 보인 단면도.Figure 4 is a cross-sectional view showing a state of rinsing the body in the nozzle structure of the present invention.
* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings
21 : 바디 24 : 에스오지공급홀21: Body 24: Suji Supply Hole
26 : 린스액공급홀 30 : 린스액저장홈26: rinse liquid supply hole 30: rinse liquid storage groove
31 : 린스액분지홀31: Rinse liquid basin hole
상기와 같은 본 고안의 목적을 달성하기 위하여 바디의 내측에 에스오지공급홀과 린스액공급홀이 형성되어 있는 반도체 에스오지 코팅장비의 노즐에 있어서, 상기 바디의 상단부 외주연에 일정깊이로 린스액저장홈을 형성하고, 그 린스액저장홈과 상기 린스액공급홀이 연결되도록 린스액분지홀을 형성하여서 구성되는 것을 특징으로 하는 반도체 에스오지 코팅장비의 노즐구조가 제공된다.In order to achieve the object of the present invention as described above, in the nozzle of a semiconductor SOH coating apparatus, in which an SOH supply hole and a rinse liquid supply hole are formed inside the body, the rinse liquid at a predetermined depth on the outer circumference of the upper end of the body. The nozzle structure of the semiconductor EOS coating apparatus is provided by forming a storage groove, and forming a rinse liquid branch hole so that the rinse liquid storage groove and the rinse liquid supply hole are connected to each other.
이하, 상기와 같이 구성되는 본 고안 반도체 에스오지 코팅장비의 노즐구조를 첨부된 도면의 실시예를 참고하여 보다 상세히 설명하면 다음과 같다.Hereinafter, with reference to the embodiment of the accompanying drawings, the nozzle structure of the present invention semiconductor Suji coating equipment configured as described above in more detail as follows.
도 2는 본 고안 반도체 에스오지 코팅장비의 노즐구조를 보인 정면도이고, 도 3은 본 고안 반도체 에스오지 코팅장비의 노즐구조를 보인 단면도로서, 도시된 바와 같이, 본 고안 반도체 에스오지 코팅장비의 노즐구조는 원추형의 바디(21) 상면에 에스오지 공급라인(22)과 린스액 공급라인(23)이 연결설치되어 있고, 상기 바디(21)의 내측에는 상기 에스오지 공급라인(22)과 바디(21)의 하단부에 형성된 디스팬스 팁(27)이 연결되도록 에스오지 공급홀(24)이 형성되어 있으며, 상기 린스액 공급라인(23)과 상기 디스팬스 팁(27)의 주변에 형성된 요홈부(25)가 연결되도록 린스액공급홀(26)이 형성되어 있다.Figure 2 is a front view showing a nozzle structure of the inventive semiconductor Suji coating equipment, Figure 3 is a cross-sectional view showing a nozzle structure of the semiconductor Suji coating equipment of the present invention, as shown, the nozzle of the semiconductor Swoge coating equipment of the present invention In the structure, the conical body 21 has an esoteric supply line 22 and a rinse liquid supply line 23 connected to the upper surface, and the esoteric supply line 22 and the body ( An esotge supply hole 24 is formed so that the dispensing tip 27 formed at the lower end of the 21 is connected, and a recess portion formed around the rinse liquid supply line 23 and the dispensing tip 27 is formed. The rinse liquid supply hole 26 is formed to connect the 25.
그리고, 상기 바디(21)의 상단부 외주연에는 일정깊이로 린스액저장홈(30)이 형성되어 있고, 그 린스액저장홈(30)과 상기 린스액공급홀(26)이 연결되도록 린스액분지홀(31)이 바디(21)의 내측에 형성되어 있다.In addition, a rinse liquid storage groove 30 is formed at a predetermined depth in the outer circumference of the upper end of the body 21, and the rinse liquid branch so that the rinse liquid storage groove 30 is connected to the rinse liquid supply hole 26. The hole 31 is formed inside the body 21.
상기와 같이 구성되어 있는 본 고안 반도체 에스오지 코팅장비의 노즐을 이용하여 용액도포작업 및 린스작업이 진행되는 순서를 설명하면 다음과 같다.Referring to the procedure of the solution coating and rinsing operation using the nozzle of the present invention semiconductor Suji coating equipment configured as described above are as follows.
용액도포작업시에는 회전하는 웨이퍼의 상측에 노즐(32)을 위치시킨 상태에서, 에스오지 공급라인(22)을 통하여 에스오지 용액을 공급하며, 이와 같이 공급되는 에스오지 용액은 디스팬스 팁(27)을 통하여 웨이퍼의 상면에 분사되고, 분사된 에스오지 용액은 회전하는 웨이퍼의 원심력에 의하여 일정두께로 도포된다.In the solution coating operation, the esoteric solution is supplied through the esoteric supply line 22 while the nozzle 32 is positioned on the upper side of the rotating wafer. Sprayed on the upper surface of the wafer, and the sprayed esoteric solution is applied to a predetermined thickness by the centrifugal force of the rotating wafer.
상기와 같은 용액도포작업을 진행하지 않을 때에는 노즐(32)을 이동하여, 리시버의 상측 입구부에 삽입한 다음, 린스액 공급라인(23)을 통하여 린스액을 계속공급하면, 공급되는 린스액중 일부는 린스액공급홀(26)을 통하여 요홈부(25)로 공급되면서 디스팬스 팁(27)에 묻어 있는 에스오지 용액을 제거하고, 린스액분지홀(31)로 공급되는 린스액은 린스액저장홈(30)에 저장됨과 아울러 도 4와 같이 바디(21)의 외주면으로 흘러 내려서 바디(21)의 외주면에 부착된 이물질들을 제거한다.When the solution coating operation is not performed as described above, the nozzle 32 is moved, inserted into the upper inlet of the receiver, and the rinse liquid is continuously supplied through the rinse liquid supply line 23. Some are supplied to the recess 25 through the rinse liquid supply hole 26 to remove the S-Oji solution from the dispensing tip 27, and the rinse liquid supplied to the rinse liquid basin hole 31 is a rinse liquid. In addition to being stored in the storage groove 30 and flows down to the outer peripheral surface of the body 21 as shown in Figure 4 to remove the foreign matter attached to the outer peripheral surface of the body (21).
이상에서 상세히 설명한 바와 같이, 본 고안 반도체 에스오지 코팅장비의 노즐구조는 바디의 상단부 외주연에 일정깊이의 린스액저장홈을 형성하고, 그 린스액저장홈과 린스액공급홀이 연결되도록 린스액분지홀을 형성하여, 리시버에서 노즐의 린스작업시에 린스액분지홀을 통하여 공급되는 린스액이 바디의 외주면을 따라 흘러내리면서 외주면에 부착된 이물질들을 제거할 수 있도록 함으로써, 이물질에 의한 웨이퍼의 오염을 방지하는 효과가 있다.As described in detail above, the nozzle structure of the inventive semiconductor SOH coating equipment forms a rinse liquid storage groove of a predetermined depth on the outer circumference of the upper end of the body, and the rinse liquid so that the rinse liquid storage groove and the rinse liquid supply hole are connected to each other. By forming a branch hole, the rinse liquid supplied through the rinse liquid basin hole during the rinsing operation of the nozzle in the receiver flows down along the outer circumferential surface of the body to remove foreign substances adhering to the outer circumferential surface. It is effective in preventing contamination.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019980019893U KR200205177Y1 (en) | 1998-10-17 | 1998-10-17 | Nozzle structure of semiconductor sog coating construction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019980019893U KR200205177Y1 (en) | 1998-10-17 | 1998-10-17 | Nozzle structure of semiconductor sog coating construction |
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| Publication Number | Publication Date |
|---|---|
| KR20000008262U KR20000008262U (en) | 2000-05-15 |
| KR200205177Y1 true KR200205177Y1 (en) | 2000-12-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| KR2019980019893U KR200205177Y1 (en) | 1998-10-17 | 1998-10-17 | Nozzle structure of semiconductor sog coating construction |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102401419B1 (en) | 2021-08-18 | 2022-05-24 | 김은숙 | Dispensing nozzle for semiconductor wafer |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030079134A (en) * | 2002-04-02 | 2003-10-10 | 삼성전자주식회사 | Nozzle for semiconductor coating apparatus |
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- 1998-10-17 KR KR2019980019893U patent/KR200205177Y1/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102401419B1 (en) | 2021-08-18 | 2022-05-24 | 김은숙 | Dispensing nozzle for semiconductor wafer |
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| KR20000008262U (en) | 2000-05-15 |
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