KR200205154Y1 - Semiconductor Wafer Etching Equipment - Google Patents

Semiconductor Wafer Etching Equipment Download PDF

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Publication number
KR200205154Y1
KR200205154Y1 KR2019970037080U KR19970037080U KR200205154Y1 KR 200205154 Y1 KR200205154 Y1 KR 200205154Y1 KR 2019970037080 U KR2019970037080 U KR 2019970037080U KR 19970037080 U KR19970037080 U KR 19970037080U KR 200205154 Y1 KR200205154 Y1 KR 200205154Y1
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process gas
gas supply
etching
etching chamber
supply line
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KR2019970037080U
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KR19990024605U (en
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박윤성
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김영환
현대반도체주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

본 고안은 반도체 웨이퍼 식각장비에 관한 것으로, 공정가스공급라인이 길거나 공정진행온도가 상온 이하의 온도일 경우, 또는 공정가스가 공정가스공급라인에 정체되는 시간이 길어질 경우 상기 공정가스공급라인으로 공급되는 공정가스는 응축 액화되어 식각챔버 내부로 공정가스가 안정적으로 공급되지 못하는 바, 이에 본 고안은 식각공정을 진행하기 위힌 사각챔버와, 그 식각챔버에 액화성의 공정가스를 공급하기 위한 공정가스공급부와, 상기 식각챔버와 공정가스공급부 사이에 연결 설치되어 공정가스공급부로부터 공급된 공정가스를 식각챔버에 공급하기 위한 소정 길이의 공정가스공급라인과, 그 공정가스공급라인의 일측에 설치되어 식각챔버로 유입되는 공정가스의 액화를 방지하기 위한 액화방지수단과, 그 액화방지수단의 일측에 설치되어 상기 식각챔버 내부로 유입되는 공정가스의 유량을 제어하는 유량제어기를 포함하여 구성되는 것을 특징으로 하는 반도체 웨이퍼 식각장비를 제공함으로써, 식각챔버에 공정가스를 안정적으로 공급하여 식각균일성을 향상시키는 효과가 있다.The present invention relates to a semiconductor wafer etching equipment, the process gas supply line is supplied to the process gas supply line when the process gas supply line is long or the process progress temperature is below room temperature, or when the process gas is stagnant in the process gas supply line is long The process gas is condensed and liquefied, so that the process gas is not stably supplied into the etching chamber. The present invention provides a rectangular chamber for performing the etching process, and a process gas supply unit for supplying a liquefiable process gas to the etching chamber. And a process gas supply line having a predetermined length connected between the etching chamber and the process gas supply unit to supply the process gas supplied from the process gas supply unit to the etching chamber, and installed on one side of the process gas supply line. Liquefaction prevention means for preventing the liquefaction of the process gas flowing into the By providing a semiconductor wafer etching equipment, characterized in that it comprises a flow controller for controlling the flow rate of the process gas flowing into the etching chamber, to stably supply the process gas to the etching chamber to improve the etching uniformity It works.

Description

반도체 웨이퍼 식각장비Semiconductor Wafer Etching Equipment

본 고안은 반도체 웨이퍼 식각장비에 관한 것으로, 특히 공정가스의 액화를 방지하여 식각챔버에 공정가스를 안정적으로 공급하기 위한 반도체 웨이퍼 식각장비에 관한 것이다.The present invention relates to a semiconductor wafer etching equipment, and more particularly to a semiconductor wafer etching equipment for stably supplying the process gas to the etching chamber by preventing the liquefaction of the process gas.

일반적으로 반도체 제조공정 중 건식각 공정은 현상공정이후에 진행되는 공정으로서, 장비와 기술의 진보에 의하여 습식식각보다 신속하고 정확하게 식각할 수 있도록 발전 되었다.In general, the dry etching process in the semiconductor manufacturing process is a process that proceeds after the development process, and has been developed to etch faster and more accurately than wet etching due to advances in equipment and technology.

일예로, 플라즈마 식각시스템은 식각챔버의 내부에 공정가스가 채워진 상태에서 알에프(RF) 에너지를 기체 혼합물에 가함으로서 옥사이드 막, 메탈 필름 등을 식각하게 되는데, 이와 같은 일반적인 건식각공정을 진행하기 위해 건식각장비가 도 1에 도시되어 있는 바, 이를 간단히 설명하면 다음과 같다.For example, the plasma etching system etches an oxide film, a metal film, etc. by applying RF energy to a gas mixture while a process gas is filled in the etching chamber. In order to proceed with the general dry etching process, Dry etching equipment is shown in Figure 1, briefly described as follows.

도 1은 종래 기술에 의한 반도체 웨이퍼 식각장비의 구조를 보인 단면도로서, 이에 도시된 바와 같이, 종래 반도체 웨이퍼 식각장비는 공정가스를 공급하기 위한 공정가스공급부(1)와, 그 공정가스공급부(1)에서 공급되는 공정가스로 웨이퍼의 식각작업을 진행하기 위한 식각챔버(5)와, 상기 공정가스공급부(1)와 식각챔버(5) 사이에 연결 설치되어 공정가스가 공급되며 외주면에 히팅코일 등의 보온재(3)가 감싸진 소정 길이의 공정가스공급라인(2)과, 그 공정가스공급라인(2)의 일측에 설치되어 상기 식각챔버(5)로 유입되는 공정가스의 유량을 제어하는 유량제어기(4)로 구성되어 있다.1 is a cross-sectional view illustrating a structure of a semiconductor wafer etching apparatus according to the prior art. As shown in the drawing, a conventional semiconductor wafer etching apparatus includes a process gas supply unit 1 for supplying a process gas and a process gas supply unit 1 thereof. ) Is installed between the etching chamber 5 and the process gas supply unit 1 and the etching chamber 5 for etching the wafer with the process gas supplied from the process gas, and the process gas is supplied to the outer circumferential surface. A process gas supply line 2 having a predetermined length wrapped with the heat insulating material 3 and a flow rate for controlling the flow rate of the process gas introduced into the etching chamber 5 by being installed at one side of the process gas supply line 2. It consists of the controller 4.

상기와 같이 구성된 종래 기술에 의한 반도체 웨이퍼 식각장비의 작용을 설명하면 다음과 같다.Referring to the operation of the semiconductor wafer etching apparatus according to the prior art configured as described above are as follows.

우선, 공정가스공급부(1)로부터 식각공정에 사용되는 공정가스를 공정가스공급라인(2)을 통해 식각챔버(5)로 공급하는데, 이때 공정가스가 상온에서 액화되는 것을 방지하기 위하여 상기 공정가스공급라인(2)의 외주연에는 보온재(3)가 감싸져 있다.First, the process gas used for the etching process from the process gas supply unit 1 is supplied to the etching chamber 5 through the process gas supply line 2, in which the process gas to prevent liquefying at room temperature The heat insulating material 3 is wrapped in the outer periphery of the supply line 2.

그리고 식각챔버(5)의 일측에 설치된 도시되지 않은 스테이지에 로봇 암을 이용하여 식각하고자 하는 웨이퍼를 위치시키고, 상기 식각챔버(5)의 일측에 연결 설치된 공정가스공급라인(2)을 거쳐 식각챔버(5) 내부로 공정가스를 유입하여 웨이퍼의 상면에 형성된 막을 식각한 후, 공정가스를 가스배출라인을 통해 외부로 배출함으로써 식각공정을 완료한다.Then, the wafer to be etched is placed on the stage (not shown) installed on one side of the etching chamber 5 by using a robot arm, and the etching chamber is passed through a process gas supply line 2 connected to one side of the etching chamber 5. (5) After the process gas is introduced into the wafer to etch the film formed on the upper surface of the wafer, the process gas is discharged to the outside through the gas discharge line to complete the etching process.

그러나, 상기와 같은 종래 기술은 공정가스공급라인(2)이 길고 공정진행온도가 상온 이하의 온도일 경우, 또는 공정가스가 공정가스공급라인에 정체되는 시간이 길어질 경우가 상기 공정가스공급라인(2)으로 공급되는 공정가스는 응축되어 액화됨으로써, 식각챔버(5) 내부로 공정가스가 안정적으로 공급되지 못하는 문제점이 있었다.However, in the above-described conventional technology, when the process gas supply line 2 is long and the process progress temperature is lower than room temperature, or when the process gas is stagnant in the process gas supply line, the process gas supply line ( The process gas supplied to 2) is condensed and liquefied, so that the process gas cannot be stably supplied into the etching chamber 5.

한편, 공정가스의 액화를 방지하기 위해 상기 공정가스공급라인의 외주연에 감겨진 보온재만으로는 액화된 가스를 다시 기화시키는데 한계가 발생하는 문제점이 있었다.On the other hand, in order to prevent the liquefaction of the process gas, there is a problem in that a limit occurs in the vaporization of the liquefied gas only with the insulation wrapped around the outer periphery of the process gas supply line.

따라서, 본 고안은 상술한 바와 같은 종래의 문제점을 해결하기 위하여 안출된 것으로, 액화성 공정가스의 응축에 의한 액화를 방지하여 식각챔버 내부로 공정가스를 안정적으로 공급하기 위한 반도체 웨이퍼 식각장비를 제공하는데 그 목적이 있다.Accordingly, the present invention has been made to solve the conventional problems as described above, to provide a semiconductor wafer etching equipment for stably supplying the process gas into the etching chamber by preventing liquefaction due to condensation of the liquefied process gas. Its purpose is to.

도 1은 종래 기술에 의한 반도체 웨이퍼 식각장비의 구조를 보인 단면도,1 is a cross-sectional view showing the structure of a semiconductor wafer etching apparatus according to the prior art,

도 2는 본 고안에 의한 반도체 웨이퍼 식각장비의 구조를 보인 단면도.Figure 2 is a cross-sectional view showing the structure of a semiconductor wafer etching apparatus according to the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

11 : 식각챔버12 : 공정가스공급부11: etching chamber 12: process gas supply unit

13 : 공정가스공급라인14 : 보온재13: process gas supply line 14: insulation

15 : 팽창기16 : 히터15: Inflator 16: Heater

17 : 유량제어기17: flow controller

상기와 같은 본 고안의 목적을 달성하기 위하여, 식각공정을 진행하기 위한 식각챔버와, 그 식각챔버에 액화성의 공정가스를 공급하기 위한 공정가스공급부와, 상기 식각챔버와 공정가스공급부 사이에 연결 설치되어 공정가스공급부로부터 공급된 공정가스를 식각챔버에 공급하기 위한 소정 길이의 공정가스공급라인과, 그 공정가스공급라인의 일측에 설치되어 식각챔버로 유입되는 공정가스의 액화를 방지하기 위한 액화방지수단과, 그 액화방지수단의 일측에 설치되어 상기 식각챔버 내부로 유입되는 공정가스의 유량을 제어하는 유량제어기를 포함하여 구성되는 것을 특징으로 하는 반도체 웨이퍼 식각장비가 제공된다.In order to achieve the object of the present invention as described above, an etching chamber for performing an etching process, a process gas supply unit for supplying a liquefied process gas to the etching chamber, and the connection between the etching chamber and the process gas supply unit And a process gas supply line having a predetermined length for supplying the process gas supplied from the process gas supply unit to the etching chamber, and liquefaction prevention for preventing liquefaction of the process gas installed at one side of the process gas supply line and flowing into the etching chamber. Means and a semiconductor wafer etching equipment is provided, comprising a flow rate controller which is installed on one side of the liquefaction prevention means for controlling the flow rate of the process gas flowing into the etching chamber.

이하, 본 고안에 의한 반도체 웨이퍼 식각장비의 실시예를 첨부된 도면에 의거하여 설명하면 다음과 같다.Hereinafter, an embodiment of a semiconductor wafer etching apparatus according to the present invention will be described with reference to the accompanying drawings.

도 2는 본 고안에 의한 반도체 웨이퍼 식각장비의 구조를 보인 단면도로서, 이에 도시된 바와 같이, 본 고안의 반도체 웨이퍼 식각장비의 구성을 보면, 식각공정을 진행하기 위한 식각챔버(11)와 소정 거리를 두고 공정가스공급부(12)를 설치하여 상기 식각챔버(11)에 액화성의 공정가스를 공급하고, 상기 식각챔버(11)와 공정가스공급부(12) 사이에는 소정 길이의 공정가스공급라인(13)을 연결 설치하여 상기 공정가스공급부(12)로부터 공급된 공정가스를 식각챔버(11)에 공급하며, 그 공정가스공급라인(13)의 외주연에는 보온재(14)가 감싸져 있다.2 is a cross-sectional view showing the structure of the semiconductor wafer etching apparatus according to the present invention, as shown in the configuration of the semiconductor wafer etching apparatus of the present invention, the etching chamber 11 and the predetermined distance for proceeding the etching process A process gas supply unit 12 is installed to supply liquefied process gas to the etching chamber 11, and a process gas supply line 13 having a predetermined length is provided between the etching chamber 11 and the process gas supply unit 12. ) Is connected to supply the process gas supplied from the process gas supply unit 12 to the etching chamber 11, the heat insulating material 14 is wrapped around the outer periphery of the process gas supply line (13).

그리고 상기 공정가스공급라인(13)의 일측에는 식각챔버(11)로 유입되는 공정가스의 액화를 방지하기 위한 액화방지수단을 설치하며, 그 액화방지수단의 일측에는 상기 식각챔버(11) 내부로 유입되는 공정가스의 유량을 제어하는 유량제어기(17)를 설치한다.And one side of the process gas supply line 13 is installed with a liquefaction prevention means for preventing the liquefaction of the process gas flowing into the etching chamber 11, one side of the liquefaction prevention means into the etch chamber 11 A flow controller 17 is provided to control the flow rate of the incoming process gas.

한편, 상기 액화방지수단은 상기 공정가스공급라인(13)으로 흐르는 공정가스의 부피를 증가시키기 위한 팽창기(15)와, 그 팽창기(15)에 의해 체적이 늘어난 공정가스에 기화열을 공급하기 위한 히터(16)로 구성된다.Meanwhile, the liquefaction preventing means includes an expander 15 for increasing the volume of the process gas flowing into the process gas supply line 13 and a heater for supplying heat of vaporization to the process gas having increased in volume by the expander 15. It consists of (16).

상기와 같이 구성된 본 고안에 의한 반도체 웨이퍼 식각장비의 작용을 설명하면 다음과 같다.Referring to the operation of the semiconductor wafer etching equipment according to the present invention configured as described above are as follows.

공정가스공급부(12)로부터 식각챔버(11)로 공급되는 공정가스는 소정 길이의 공정가스공급라인(13)으로 공급되면서 액화될 우려가 있는데, 상기 공정가스공급라인(13)의 일측에 설치된 팽창기(15)에 의해 인위적으로 공정가스의 체적을 팽창시키면 압력이 낮아지는데, 이때 히터(16)에서 체적이 팽창된 공정가스에 기화열을 공급하여 공정가스가 액화되는 것을 방지한다.The process gas supplied from the process gas supply unit 12 to the etching chamber 11 may be liquefied while being supplied to the process gas supply line 13 having a predetermined length, and an expander installed at one side of the process gas supply line 13. By artificially expanding the volume of the process gas by (15), the pressure is lowered. At this time, the heater 16 supplies vaporization heat to the expanded process gas to prevent the process gas from liquefying.

따라서, 공정가스는 기체상태를 유지하면서 안정적으로 식각챔버(11) 내부에 공급되며, 공정가스를 주입받은 식각챔버는 기존과 동일한 방법으로 식각작업을 진행한다.Therefore, the process gas is stably supplied into the etching chamber 11 while maintaining the gas state, and the etching chamber in which the process gas is injected is etched in the same manner as before.

이상에서 설명한 바와 같이, 본 고안에 의한 반도체 웨이퍼 식각장비는 공정가스공급부로부터 식각챔버로 공정가스를 공급하는 가스공급라인에 공정가스의 액화를 방지하기 위한 액화방지수단을 설치함으로써, 식각챔버에 공정가스를 안정적으로 공급하여 식각균일성을 향상시키는 효과가 있다.As described above, the semiconductor wafer etching apparatus according to the present invention provides a process in the etching chamber by installing liquefaction preventing means for preventing the liquefaction of the process gas in the gas supply line for supplying the process gas from the process gas supply unit to the etching chamber. Stable supply of gas has an effect of improving the etching uniformity.

Claims (2)

식각공정을 진행하기 위한 식각챔버와, 그 식각챔버에 액화성의 공정가스를 공급하기 위한 공정가스공급부와, 상기 식각챔버와 공정가스공급부 사이에 연결 설치되어 공정가스공급부로부터 공급된 공정가스를 식각챔버에 공급하기 위한 소정 길이의 공정가스공급라인과, 그 공정가스공급라인의 일측에 설치되어 식각챔버로 유입되는 공정가스의 액화를 방지하기 위한 액화방지수단과, 그 액화방지수단의 일측에 설치되어 상기 식각챔버 내부로 유입되는 공정가스의 유량을 제어하는 유량제어기를 포함하여 구성되는 것을 특징으로 하는 반도체 웨이퍼 식각장비.An etching chamber for providing an etching chamber for performing an etching process, a process gas supply unit for supplying a liquefiable process gas to the etching chamber, and a process gas connected between the etching chamber and the process gas supply unit and supplied from the process gas supply unit A process gas supply line having a predetermined length for supplying to the gas, a liquefaction preventing means installed at one side of the process gas supply line to prevent liquefaction of the process gas flowing into the etching chamber, and one side of the liquefaction preventing means. And a flow controller for controlling the flow rate of the process gas introduced into the etching chamber. 제1항에 있어서, 상기 액화방지수단은 상기 공정가스공급라인으로 흐르는 공정가스의 부피를 증가시키기 위한 팽창기와, 그 팽창기에 의해 체적이 늘어난 공정가스에 기화열을 공급하기 위한 히터로 구성되는 것을 특징으로 하는 반도체 웨이퍼 식각장비.The method of claim 1, wherein the liquefaction prevention means comprises an expander for increasing the volume of the process gas flowing to the process gas supply line, and a heater for supplying heat of vaporization to the process gas increased by the expander. Semiconductor wafer etching equipment.
KR2019970037080U 1997-12-13 1997-12-13 Semiconductor Wafer Etching Equipment KR200205154Y1 (en)

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