KR0168211B1 - Cooling method of cathode for semiconductor device manufacturing - Google Patents
Cooling method of cathode for semiconductor device manufacturing Download PDFInfo
- Publication number
- KR0168211B1 KR0168211B1 KR1019950044905A KR19950044905A KR0168211B1 KR 0168211 B1 KR0168211 B1 KR 0168211B1 KR 1019950044905 A KR1019950044905 A KR 1019950044905A KR 19950044905 A KR19950044905 A KR 19950044905A KR 0168211 B1 KR0168211 B1 KR 0168211B1
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- Prior art keywords
- cathode
- cooling
- semiconductor device
- device manufacturing
- cooling method
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Abstract
반도체소자 제조장치에 사용되는 캐소우드(cathode) 냉각 방법에 관하여 기재하고 있다. 본 발명에 따르면, 반도체소자 제조라인 내에 설치된 공통 냉각수 탱크에서 인출되는 공통 냉각수 라인으로부터 냉각수를 공급받아 캐소우드를 냉각시킨다.A cathode cooling method used in a semiconductor device manufacturing apparatus is described. According to the present invention, the cathode is cooled by receiving the coolant from the common coolant line drawn out from the common coolant tank installed in the semiconductor device manufacturing line.
따라서, 별도의 냉각장치를 필요로 하지 않으므로 반도체소자 제조비용을 절감할 수 있다.Therefore, since a separate cooling device is not required, the semiconductor device manufacturing cost can be reduced.
Description
제1도는 종래기술에 따른 캐소우드 냉각방법을 설명하기 위해 도시한 개략도이다.1 is a schematic diagram for explaining a cathode cooling method according to the prior art.
제2도는 본 발명의 일 실시예에 따른 캐소우드 냉각방법을 설명하기 위해 도시한 개략도이다.2 is a schematic view illustrating a cathode cooling method according to an embodiment of the present invention.
본 발명은 반도체 소자의 제조방법에 관한 것으로, 특히 반도체소자 제조장치에서 사용되는 캐소우드(cathode)의 냉각(cooling)방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, and more particularly, to a method of cooling a cathode used in a semiconductor device manufacturing apparatus.
플라즈마 가스를 이용한 식각기술은 고집적 회로의 제조 공정에서 널리 사용되는 기술이다. 플라즈마 식각은 반응 챔버내의 기체혼합물에 RF 에너지를 가하고 이로 인해 발생된 반응력 강한 플라즈마, 즉 이온화된 입자가 식각될 막의 원소와 반응하여 식각이 이루어진다.An etching technique using plasma gas is a technique widely used in a manufacturing process of a highly integrated circuit. Plasma etching is performed by applying RF energy to the gas mixture in the reaction chamber and reacting with the reactive plasma generated thereby, ie ionized particles, with the elements of the film to be etched.
이러한 플라즈마 식각의 신뢰성을 결정하는 요인 중의 하나는 플라즈마 상태에서 웨이퍼의 열적 안정성이다. 즉, 반응 챔버내에서 반응에 사용될 플라즈마를 발생시키기 위해 일반적으로 캐소우드에 고전압이 인가되는데, 이로 인해 식각이 진행되는 동안 반응 챔버 내부의 온도가 증가하게 된다. 이는 웨이퍼의 온도 증가를 유발하며, 웨이퍼의 온도 증가는 웨이퍼 상부에 식각마스크로 사용하기 위해 도포되어 있는 포토레지스트층의 플로우(flow)를 초래한다. 따라서, 식각시 원하는 패턴을 정확하게 형성할 수 없는 문제점이 발생한다.One of the factors that determine the reliability of the plasma etching is the thermal stability of the wafer in the plasma state. That is, a high voltage is generally applied to the cathode to generate a plasma to be used for the reaction in the reaction chamber, which increases the temperature inside the reaction chamber during etching. This causes an increase in the temperature of the wafer, which results in a flow of a photoresist layer applied for use as an etch mask on top of the wafer. Therefore, a problem arises in that the desired pattern cannot be accurately formed during etching.
따라서 최근에는 상기 캐소우드의 온도를 제어하기 위한 냉각시스템을 캐소우드에 별도로 부착하여 사용하고 있다.Therefore, recently, a cooling system for controlling the temperature of the cathode is attached to the cathode separately.
제1도는 종래기술에 따른 캐소우드 냉각방법을 설명하기 위해 도시한 개략도로서, 도면부호 10은 반응챔버에 설치된 캐소우드를, 15는 상기 캐소우드를 냉각시키기 위한 냉각 장치를 나타낸다.FIG. 1 is a schematic view illustrating a cathode cooling method according to the prior art, wherein reference numeral 10 denotes a cathode installed in a reaction chamber, and 15 denotes a cooling device for cooling the cathode.
종래의 방법에 따르면, 플라즈마를 발생시키기 위해 상기 캐소우드(10)에 고전압이 인가되고, 이에 의해 상기 캐소우드(10)의 온도가 높아지는 것을 상기 냉각 장치(15)가 제어하게 된다.According to the conventional method, a high voltage is applied to the cathode 10 to generate a plasma, thereby controlling the cooling device 15 that the temperature of the cathode 10 is increased.
상기 냉각 장치 (15)에 의한 캐소우드(10) 냉각 방법은, 냉각수를 캐소우드(10)에 공급하고 회수함으로써 이루어진다.The method of cooling the cathode 10 by the cooling device 15 is achieved by supplying and cooling the cooling water to the cathode 10.
이와 같은 캐소우드 냉각 방법은, 첫째, 별도의 캐소우드 냉각장치(15)를 사용하여야 하기 때문에 제조비용이 증가하고, 둘째, 상기냉각 장치(15)의 구조가 복잡하여 누수(leak)가 발생할 가능성이 많으며, 셋째, 장비의 고장이 발생할 가능성이 높기 때문에 온도 제어가 불안정하며, 넷째, 각각의 캐소우드에 하나의 냉각장치가 사용되기 때문에 냉매에 사용되는 CFC를 일일이 관리하여야 하고, 관리가 제대로 이루어지지 않는 경우에는 환경오염의 문제가 심각하다.In the cathode cooling method, first, since a separate cathode cooling device 15 must be used, manufacturing cost increases, and second, the structure of the cooling device 15 is complicated, so that leakage may occur. Third, temperature control is unstable because there is a high possibility of equipment failure. Fourth, because one cooling device is used for each cathode, the CFC used for the refrigerant must be managed one by one. If not, the problem of environmental pollution is serious.
따라서, 본 발명의 목적은 상기 문제점을 해결하여, 보다 용이하게 캐소우드를 냉각시킬 수 있는 방법을 제공하는 것이다.Accordingly, it is an object of the present invention to solve the above problems and to provide a method which can more easily cool the cathode.
상기 목적을 달성하기 위하여 본 발명은,The present invention to achieve the above object,
반도체소자 제조장치에 사용되는 캐소우드(cathode) 냉각 방법에 있어서 ,In the cathode cooling method used in the semiconductor device manufacturing apparatus,
반도체소자 제조라인 내에 설치된 공통 냉각수 탱크에서 인출되는 공통 냉각수 라인으로부터 냉각수를 공급받아 캐소우드를 냉각시키는 것을 특징으로 하는 캐소우드 냉각 방법을 제공한다.Provided is a cathode cooling method characterized by cooling the cathode by receiving the cooling water from the common cooling water line drawn from the common cooling water tank installed in the semiconductor device manufacturing line.
본 발명의 바람직한 실시예에 따르면, 상기 캐소우드는 플라즈마 식각장치에서 사용될 수 있으며, 상기 냉각수는 상기 공통 냉각수 라인과 캐소우드를 연결하는 라인을 통해 캐소우드에 공급된다.According to a preferred embodiment of the present invention, the cathode may be used in a plasma etching apparatus, and the coolant is supplied to the cathode through a line connecting the common coolant line and the cathode.
따라서, 별도의 냉각장치를 필요로 하지 않으므로 반도체소자 제조비용을 절감할 수 있다.Therefore, since a separate cooling device is not required, the semiconductor device manufacturing cost can be reduced.
이하, 첨부한 도면을 참조하여 본 발명을 보다 상세하게 설명하고자 한다.Hereinafter, with reference to the accompanying drawings will be described in more detail the present invention.
제2도는 본 발명의 일 실시예에 따른 캐소우드 냉각방법을 설명하기 위해 도시한 개략도로서, 도면부호 50은 반응챔버 내에 설치된 캐소우드를, 55는 반도체소자 제조라인 내에 설치된 냉각수 탱크를 나타낸다.FIG. 2 is a schematic view illustrating a cathode cooling method according to an embodiment of the present invention, wherein reference numeral 50 denotes a cathode installed in a reaction chamber, and 55 denotes a cooling water tank installed in a semiconductor device manufacturing line.
본 발명의 일 실시예에 따른 캐소우드(50) 냉각방법은, 별도의 냉각장치를 구비하지 않고, 반도체소자 제조라인 내에 설치된 공통의 냉각수 탱크(55)로부터 냉각수를 공급받아 냉각시킨다. 이는, 상기냉각수 탱크(55)에서 인출되는 공통 냉각수 라인에서 상기 식각 챔버내에 설치된 캐소우드(50)에 냉각수를 공급할 수 있도록 상기 캐소우드(50)와 연결되는 라인을 설치함으로써 가능하다.The cathode 50 cooling method according to an embodiment of the present invention does not include a separate cooling device, and receives cooling water from a common cooling water tank 55 installed in a semiconductor device manufacturing line. This is possible by installing a line connected to the cathode 50 to supply the cooling water to the cathode 50 installed in the etching chamber from the common cooling water line drawn out from the cooling water tank 55.
본 발명에 의한 캐소우드 냉각방법에 따르면, 별도의 냉각장치를 필요로하지 않고 기존의 냉각수 탱크로부터 공급되는 냉각수를 이용하기 때문에 첫째, 별도의 냉각장치를 필요로 하지 않으므로 반도채소자 제조비용을 절감할 수 있으며, 둘째, 기존의 공통 냉각수 라인과 연결된 하나의 (파이프)라인을 통해 캐소우드에 냉각수를 공급하기 때문에 냉각수가 누출될 소지가 적어 종래의 냉각장치의 부식, 고장 등에 의해 발생되던 웨이퍼 온도불안정을 해결할 수 있으며, 셋째, 냉각방법이 간단하여 반도체소자의 제조가 용이하고, 넷째, 공통 냉각 탱크에 하나의 냉각장치가 사용되기 때문에 냉매에 사용되는 CFC 관리가 용이하여 환경오염을 방지할 수 있다.According to the cathode cooling method according to the present invention, since the cooling water supplied from the existing cooling water tank is used without requiring a separate cooling device, firstly, a separate cooling device is not required, thereby reducing the manufacturing cost of the semiconductor device. Second, because the cooling water is supplied to the cathode through one (pipe) line connected to the existing common cooling water line, the cooling water is less likely to leak, and thus the wafer temperature caused by corrosion or failure of the conventional cooling device. Instability can be solved. Third, it is easy to manufacture semiconductor devices due to the simple cooling method. Fourth, because one cooling device is used in common cooling tank, it is easy to manage CFCs used for refrigerants, and thus environmental pollution can be prevented. have.
본 발명이 상기 실시예에 한정되지 않으며 , 많은 변형이 본 발명의 기술적 사상내에서 당분야에서 통상의 지식을 가진 자에 의하여 가능함은 명백하다.The present invention is not limited to the above embodiments, and it is apparent that many modifications are possible by those skilled in the art within the technical idea of the present invention.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950044905A KR0168211B1 (en) | 1995-11-29 | 1995-11-29 | Cooling method of cathode for semiconductor device manufacturing |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950044905A KR0168211B1 (en) | 1995-11-29 | 1995-11-29 | Cooling method of cathode for semiconductor device manufacturing |
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| Publication Number | Publication Date |
|---|---|
| KR970030460A KR970030460A (en) | 1997-06-26 |
| KR0168211B1 true KR0168211B1 (en) | 1999-02-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| KR1019950044905A KR0168211B1 (en) | 1995-11-29 | 1995-11-29 | Cooling method of cathode for semiconductor device manufacturing |
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| KR (1) | KR0168211B1 (en) |
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1995
- 1995-11-29 KR KR1019950044905A patent/KR0168211B1/en not_active IP Right Cessation
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| KR970030460A (en) | 1997-06-26 |
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