KR200265646Y1 - Apparatus for heating a vacuum release gas supply line of a cassette chamber - Google Patents

Abstract

The present invention relates to a heating apparatus of a vacuum release gas supply line of a cassette chamber, and an internal gas discharge line (3; shown in FIG. 1) through which internal gas is discharged to convert an internal atmospheric pressure state into a vacuum state, and In the etching apparatus having cassette chambers 1 (shown in FIG. 1), each connected to a vacuum release gas supply line 5 (shown in FIG. 1), to which vacuum release gas is supplied to convert the vacuum state to atmospheric pressure. The heater 10 is installed at a portion of the vacuum release gas supply line 5 adjacent to the cassette chamber 1 and heats the vacuum release gas passing through the vacuum release gas supply line 5 by application of power. Wow; A power switch SW1 for opening and closing the power applied to the heater 10; The vacuum release gas heated by the heater 10 in the vacuum release gas supply line (5) is installed in the area passing through, and when the temperature of the vacuum release gas reaches the first set value, the contact point is automatically cut off the power supply Including a first bimetal switch 30, by heating the vacuum release gas supplied to the cassette chamber to a constant temperature to evaporate moisture present in the cassette chamber and the wafer surface due to the moisture in the vacuum chamber By preventing the watermark from occurring on the surface of the wafer, it is possible to prevent defects in the wafer due to the watermark during the process, thereby increasing the yield of the wafer.

Description

Heater of vacuum release gas supply line of cassette chamber {APPARATUS FOR HEATING A VACUUM RELEASE GAS SUPPLY LINE OF A CASSETTE CHAMBER}

The present invention relates to a heating device of a vacuum release gas supply line of a cassette chamber, and more particularly, by evaporating the moisture present in the cassette chamber and the wafer surface by supplying a vacuum release gas supplied to the cassette chamber at a constant temperature. The present invention relates to a heating device of a vacuum release gas supply line of a cassette chamber, which prevents water marks from being generated on the wafer surface due to moisture during vacuum in the cassette chamber.

In general, an etching process using plasma is widely used in a semiconductor device manufacturing process and an LCD substrate manufacturing process. In a typical method, an object to be processed, such as a semiconductor wafer, is placed on a lower electrode located parallel to the upper electrode, and RF power is applied between the electrodes to discharge electricity to generate plasma of an etching gap between the electrodes. The object is etched according to the selected pattern.

A process chamber is provided for stable flow of process gas and control of RF power in a certain space to perform an etching process using plasma, and a cassette chamber for transferring wafers to the process chamber. ) Is provided.

The cassette chamber serves to load the wafer into the process chamber while alternating atmospheric and vacuum conditions when loading the wafer into the process chamber.

A system for vacuuming and releasing the inside of the cassette chamber of the etching equipment for performing the etching process will be described below with reference to the accompanying drawings.

1 is a schematic view showing a vacuum and vacuum release system of a cassette chamber of a conventional etching equipment. As shown, the cassette chamber 1 has an internal gas discharge line 3 for discharging the gas inside to the outside by the vacuum pump 2 and a vacuum for supplying the vacuum release gas from the vacuum release gas supply unit 4. The release gas supply line 5 is connected to each other, and the internal gas discharge line 3 and the vacuum release gas supply line 5 respectively include first and second flow rate regulating valves 3a for regulating the flow of gas passing through the line. 5a) are provided, respectively, and the first and second flow regulating valves 3a and 5a are controlled by the controller 6, respectively.

On the other hand, nitrogen (N ₂ ) gas is used as the vacuum release gas.

The vacuum and vacuum release system of the cassette chamber of such nicking equipment is adapted to convert the inside of the cassette chamber 1 from the atmospheric pressure to the vacuum state when the wafer cassette on which the wafer to be subjected to the etching process is loaded is loaded into the cassette chamber 1. In order to discharge the gas inside the cassette chamber 1 through the internal gas discharge line 3 by the pumping of the vacuum pump 2 to the outside. At this time, the controller 6 controls the first flow control valve 3a to discharge a small amount of gas to the outside at a pressure of 760torr, and a large amount of gas to the outside at 10torr. By making the inside of the cassette chamber 1 into a vacuum state.

In addition, the control unit 6 controls the second flow rate so that the vacuum release gas is slowly supplied into the cassette chamber 1 when switching from the vacuum state to the atmospheric pressure state in order to discharge the wafer cassette equipped with the wafers after the etching process to the outside. The valve 5a is controlled, and when the set time elapses, the second flow regulating valve 5a is controlled to rapidly supply the vacuum releasing gas into the cassette chamber 1.

However, the vacuum and vacuum release system of the cassette chamber of the conventional nickname equipment is such that the moisture present in the cassette chamber or the surface of the wafer condenses and evaporates on the wafer surface due to the adiabatic expansion when the inside of the cassette chamber is vacuumed. Particles have a problem in that a water mark is formed to cause defects in the wafer during the etching process, thereby significantly lowering the yield of the wafer.

The present invention is to solve the above-mentioned conventional problems, an object of the present invention is to supply the vacuum release gas supplied to the cassette chamber by heating to a constant temperature to evaporate the moisture present in the cassette chamber and the wafer surface to the cassette chamber By preventing the water mark from occurring on the surface of the wafer due to moisture in the vacuum, the heating apparatus of the vacuum release gas supply line of the cassette chamber is increased to prevent the defect from occurring in the wafer due to the water mark during the process, thereby increasing the yield of the wafer. To provide.

The present invention for realizing the above object, the internal gas discharge line for discharging the internal gas to convert the internal atmospheric pressure state into a vacuum state, and the vacuum release gas is supplied to convert the internal vacuum state to atmospheric pressure state An etching apparatus having a cassette chamber connected to a vacuum release gas supply line, wherein the vacuum release gas is installed at a portion of the vacuum release gas supply line adjacent to the cassette chamber and passes through the vacuum release gas supply line by application of power. A heater for heating the; A power switch for opening and closing the power applied to the heater; It is installed on the part of the vacuum release gas supply line through which the vacuum release gas heated by the heater passes, and includes a first bimetal switch to cut off the power supply by automatically disconnecting the contact when the temperature of the vacuum release gas reaches the first set value. Characterized in that.

It is installed at both ends of the first bimetal switch and the bypass switch for switching both ends, and the vacuum releasing gas heated by the heater in the vacuum releasing gas supply line passes through, the temperature of the vacuum releasing gas is higher than the first set value. And a second bimetal switch which automatically cuts off the power supply when the contact point is reached when the second set value is set to be high.

It is installed in the part of the vacuum release gas supply line through which the vacuum release gas heated by the heater passes, and overheating to cut off the power supplied to the heater when the temperature of the vacuum release gas reaches the third set value which is set higher than the second set value. It further comprises a prevention switch.

The heater is characterized in that the outer surface is wrapped with a heat shield tape.

1 is a schematic view showing a vacuum and vacuum release system of a cassette chamber of a conventional etching equipment,

Figure 2 is a block diagram showing a heating apparatus of the vacuum release gas supply line of the cassette chamber according to the present invention.

<Description of Symbols for Main Parts of Drawings>

10; Heater 20; Power supply

30; First bimetal switch 40; 2nd bimetal switch

50; Overheat prevention switch SW1; Power switch

SW2; Bypass switch

Hereinafter, with reference to the accompanying drawings, the most preferred embodiment of the present invention will be described in more detail so that those skilled in the art can easily practice.

Figure 2 is a block diagram showing a heating apparatus of the vacuum release gas supply line of the cassette chamber according to the present invention. As shown, the heating apparatus of the vacuum release gas supply line of the cassette chamber according to the preferred embodiment of the present invention is located at a portion of the vacuum release gas supply line 5 adjacent to the cassette chamber 1 (shown in FIG. 1). The heater 10 to be installed, the power switch SW1 for opening and closing the power supplied to the heater 10, and the vacuum release gas heated by the heater 10 in the vacuum release gas supply line 5 pass therethrough. It includes a first bimetal switch 30 is installed in the site.

The heater 10 is installed to surround the outer circumferential surface of the vacuum release gas supply line 5, and receives power from the power supply unit 20 to heat the vacuum release gas passing through the vacuum release gas supply line 5. As the vacuum release gas, for example, nitrogen (N ₂ ) gas is used.

In addition, the heater 10 is surrounded by a heat shield tape 11 such as asbestos tape on its outer surface. Therefore, the worker is prevented from being burned by the heat generated from the heater 10.

The power switch SW1 opens and closes the power supplied from the power supply unit 20 to the heater 10.

When the first bimetal switch 30 reaches the first set value of the vacuum release gas, the first bimetal switch 30 automatically cuts off the power to cut off the power. Here, the first set value indicates the heating temperature of the vacuum releasing gas when the defects of the wafer which have undergone the etching process are examined and the defects due to moisture fall within a predetermined number, for example, in the range of 500 to 20,000, and the first set value is 50 degrees. It is preferable to have a value corresponding to the range of C to 80 degrees C.

In addition, a bypass switch SW2 is provided at both ends of the first bimetal switch 30, and a vacuum release gas is provided at a portion of the vacuum release gas supply line 5 where the vacuum release gas heated by the heater 10 passes. The second bimetal switch 40 may be installed to automatically cut off the contact from the power supply unit 20 when the temperature reaches the second set value which is set higher than the first set value.

Here, the second set value indicates the heating temperature of the vacuum releasing gas when the defects of the wafer after the etching process have been examined and the number of defects due to moisture exceed a certain number, for example, 20,000, and the second set value is higher than 80 degrees to 100 It is preferable to have a value in the range below degree degree.

Therefore, when the amount of moisture in the cassette chamber 1 exceeds the predetermined number of defects due to moisture in the wafer, the power flowing to the first bimetal switch 30 is cut off by turning on the bypass switch SW2, and The vacuum release gas passing through the vacuum release gas supply line 5 is heated by the second bimetal switch 40 to a temperature corresponding to a second set point having a value larger than the first set point.

Meanwhile, the heater 10 is installed at a portion of the vacuum release gas supply line 5 through which the vacuum release gas heated by the heater passes, and reaches a third set value at which the temperature of the vacuum release gas is set higher than the second set value. It is preferable to have an overheat prevention switch 50 to cut off the power supplied to. Here, the third set value may have a value corresponding to the range of 120 degrees to 180 degrees Celsius.

Operation of the heating device of the vacuum release gas supply line of the cassette chamber having such a structure is performed as follows.

When the power switch SW1 is turned on, the heater 10 receives the power from the power supply unit 20 to heat the vacuum release gas passing through the vacuum release gas supply line 5, but the first bimetal switch 30 ) To a constant temperature. Therefore, the water in the process is performed by evaporating the water present in the cassette chamber 1 (shown in FIG. 1) and the wafer surface to prevent water marks on the wafer surface due to moisture during vacuum in the cassette chamber 1. Marks prevent wafer defects from occurring.

In addition, if the amount of water present in the cassette chamber 1 and on the wafer surface is large by examining defects of the wafer after the etching process, the bypass switch SW2 is turned on to pass through the vacuum release gas supply line 5. The vacuum release gas can be heated to a higher temperature so that the temperature of the vacuum release gas supplied to the cassette chamber 1 can be adjusted according to the amount of moisture present in the cassette chamber 1 and on the wafer surface.

As described above, the heating apparatus of the vacuum release gas supply line of the cassette chamber according to the present invention by heating and supplying the vacuum release gas supplied to the cassette chamber at a constant temperature to evaporate the moisture present in the cassette chamber and the wafer surface The water inside the cassette chamber is prevented from generating water marks on the wafer surface due to moisture during vacuum, thereby preventing defects in the wafer due to the water marks during the process, thereby increasing the yield of the wafer.

What has been described above is just one embodiment for carrying out the heating device of the vacuum release gas supply line of the cassette chamber according to the present invention, the present invention is not limited to the above embodiment, the utility model registration claims below As claimed in the present invention without departing from the gist of the present subject matter, anyone with ordinary knowledge in the field to which the present invention belongs will have the technical spirit of the present invention to the extent that various modifications can be made.

Claims (4)

Cassette chambers each connected with an internal gas discharge line for discharging the internal atmospheric pressure to a vacuum state and a vacuum release gas supply line for supplying a vacuum release gas to convert the internal vacuum state to an atmospheric pressure state In the etching equipment provided, A heater installed at a portion of the vacuum release gas supply line adjacent to the cassette chamber and heating the vacuum release gas passing through the vacuum release gas supply line by applying power; A power switch for opening and closing the power applied to the heater; The first bimetal switch is installed at a portion of the vacuum release gas supply line through which the vacuum release gas heated by the heater passes, and automatically disconnects the contact when the temperature of the vacuum release gas reaches a first set value, thereby shutting off power. ; Heating apparatus of the vacuum release gas supply line of the cassette chamber comprising a. The vacuum switch of claim 1, wherein the bypass switch is installed at both ends of the first bimetal switch and switches at both ends thereof, and the vacuum release gas heated by the heater in the vacuum release gas supply line passes. And heating the vacuum release gas supply line of the cassette chamber, further comprising: a second bimetal switch which automatically cuts off the power when the temperature of the release gas reaches a second set value higher than the first set value. Device. 3. The vacuum release gas supply line of claim 2, wherein the vacuum release gas heated by the heater passes in the vacuum release gas supply line, and when the temperature of the vacuum release gas reaches a third set value higher than the second set value. Heating device of the vacuum release gas supply line of the cassette chamber, characterized in that it further comprises an overheat prevention switch to cut off the power supplied to the heater. 4. The heating apparatus of claim 1, wherein the heater has an outer surface of the heater wrapped with a heat shielding tape.