KR20020094219A - 수직형 액상 에피택시 장비 - Google Patents
수직형 액상 에피택시 장비 Download PDFInfo
- Publication number
- KR20020094219A KR20020094219A KR1020010031066A KR20010031066A KR20020094219A KR 20020094219 A KR20020094219 A KR 20020094219A KR 1020010031066 A KR1020010031066 A KR 1020010031066A KR 20010031066 A KR20010031066 A KR 20010031066A KR 20020094219 A KR20020094219 A KR 20020094219A
- Authority
- KR
- South Korea
- Prior art keywords
- wafer
- cover
- equipment
- vertical
- boat
- Prior art date
Links
- 238000004943 liquid phase epitaxy Methods 0.000 title abstract description 29
- 235000012431 wafers Nutrition 0.000 claims abstract description 57
- 238000000034 method Methods 0.000 claims abstract description 21
- 238000000407 epitaxy Methods 0.000 claims abstract description 16
- 239000002019 doping agent Substances 0.000 claims abstract description 10
- 239000010453 quartz Substances 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000012159 carrier gas Substances 0.000 abstract description 14
- 239000000155 melt Substances 0.000 abstract description 8
- 238000010494 dissociation reaction Methods 0.000 abstract description 2
- 230000005593 dissociations Effects 0.000 abstract description 2
- 230000000452 restraining effect Effects 0.000 abstract 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/10—Controlling or regulating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
Claims (7)
- 웨이퍼 커버, 다공성 커버, 용융시료 용기를 각각 포함하고,상기 웨이퍼 커버와 다공성 커버가 상하로 적층된 구조를 가지는 보우트 세트를 포함하여 이루어진 것을 특징으로 하는반도체 소자 제조용 수직형 액상 에피택시 장비.
- 제1 항에 있어서,상기 보우트 세트는두 장 이상의 웨이퍼 장착이 가능한 구조로 이루어져 있는 것을 특징으로 하는 수직형 액상 에피택시 장비.
- 제1 항에 있어서,상기 웨이퍼 커버의 하부에 상기 다공성 커버가 위치하는 것을 특징으로 하는 수직형 액상 에피택시 장비.
- 제1 항에 있어서,두 개 이상의 상기 보우트 세트가 적층된 구조를 가지는 것을 특징으로 하는 수직형 에피택시 장비.
- 제1 항에 있어서,상기 보우트 세트의 외부를 둘러싸고 있는 석영관 및상기 석영관의 외부를 둘러싸고 있는 히터 블록을 더 포함하고 있는 것을 특징으로 하는 수직형 액상 에피택시 장비.
- 제5 항에 있어서,상기 석영관 및 히터 블록은 상하로 이동 가능한 것을 특징으로 하는 수직형 액상 에피택시 장비.
- 제1 항에 있어서,상기 석영관 내에 수직방향의 투입법에 의하여 도펀트 소스가 공급되는 것을 특징으로 하는 수직형 액상 에피택시 장비.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2001-0031066A KR100416697B1 (ko) | 2001-06-04 | 2001-06-04 | 수직형 액상 에피택시 장비 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2001-0031066A KR100416697B1 (ko) | 2001-06-04 | 2001-06-04 | 수직형 액상 에피택시 장비 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20020094219A true KR20020094219A (ko) | 2002-12-18 |
KR100416697B1 KR100416697B1 (ko) | 2004-02-05 |
Family
ID=27707707
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2001-0031066A KR100416697B1 (ko) | 2001-06-04 | 2001-06-04 | 수직형 액상 에피택시 장비 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100416697B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210000092A (ko) | 2019-06-24 | 2021-01-04 | 주식회사 아이오지 | 수직형 액상 에피텍셜 장치 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51111476A (en) * | 1975-03-26 | 1976-10-01 | Sumitomo Electric Ind Ltd | Method of liquid phase epitaxial crystal growth |
JPH01145398A (ja) * | 1987-12-01 | 1989-06-07 | Sumitomo Electric Ind Ltd | 燐化ガリウムの液相エピタキシヤル成長方法 |
JPH01160895A (ja) * | 1987-12-16 | 1989-06-23 | Mitsubishi Electric Corp | 液相エピタキシャル成長用スライドボート |
JPH0620979A (ja) * | 1992-07-03 | 1994-01-28 | Sharp Corp | 液相エピタキシャル成長装置 |
JP3322912B2 (ja) * | 1992-08-17 | 2002-09-09 | 東京エレクトロン株式会社 | ウエハボート回転装置及びこれを用いた熱処理装置 |
-
2001
- 2001-06-04 KR KR10-2001-0031066A patent/KR100416697B1/ko active IP Right Grant
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210000092A (ko) | 2019-06-24 | 2021-01-04 | 주식회사 아이오지 | 수직형 액상 에피텍셜 장치 |
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Publication number | Publication date |
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KR100416697B1 (ko) | 2004-02-05 |
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