KR20020054548A - Epoxy molding composition for encapsulating semiconductor device - Google Patents

Epoxy molding composition for encapsulating semiconductor device Download PDF

Info

Publication number
KR20020054548A
KR20020054548A KR1020000083669A KR20000083669A KR20020054548A KR 20020054548 A KR20020054548 A KR 20020054548A KR 1020000083669 A KR1020000083669 A KR 1020000083669A KR 20000083669 A KR20000083669 A KR 20000083669A KR 20020054548 A KR20020054548 A KR 20020054548A
Authority
KR
South Korea
Prior art keywords
epoxy resin
resin composition
formula
weight
sealing
Prior art date
Application number
KR1020000083669A
Other languages
Korean (ko)
Other versions
KR100413358B1 (en
Inventor
홍용우
Original Assignee
안복현
제일모직주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 안복현, 제일모직주식회사 filed Critical 안복현
Priority to KR10-2000-0083669A priority Critical patent/KR100413358B1/en
Publication of KR20020054548A publication Critical patent/KR20020054548A/en
Application granted granted Critical
Publication of KR100413358B1 publication Critical patent/KR100413358B1/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C08L63/04Epoxynovolacs
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/62Alcohols or phenols
    • C08G59/621Phenols
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/34Silicon-containing compounds
    • C08K3/36Silica
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/49Phosphorus-containing compounds
    • C08K5/51Phosphorus bound to oxygen
    • C08K5/53Phosphorus bound to oxygen bound to oxygen and to carbon only
    • C08K5/5313Phosphinic compounds, e.g. R2=P(:O)OR'
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L75/00Compositions of polyureas or polyurethanes; Compositions of derivatives of such polymers
    • C08L75/04Polyurethanes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L91/00Compositions of oils, fats or waxes; Compositions of derivatives thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • H01L23/295Organic, e.g. plastic containing a filler
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00Specific properties of additives
    • C08K2201/002Physical properties
    • C08K2201/005Additives being defined by their particle size in general

Abstract

PURPOSE: Provided is an epoxy resin composition for sealing a semiconductor device, which is excellent in formability and corrosion-resistance against aluminum pads even under the condition of high temperature and high humidity. CONSTITUTION: The epoxy resin composition contains: 9.00-15.00wt% of an o-cresol novolac epoxy resin(formula 1); 5.00-10.00wt% of at least one or two curing agents selected from the group consisting of a cresol novolac resin, a dicyclopentadiene resin, and a phenol novolac resin having at least two hydroxy groups and a hydroxy equivalent of 100-200; 0.01-0.40wt% of a triphenyl phosphine-based curing accelerator; 0.10-0.20wt% of a modified silicone oil; 75.00-85.00wt% of an inorganic filler such as fused silica; 0.20-2.00wt% of a thermo polyurethane resin with an isocyanate terminal having a molecular weight of 3000-200000. In the formula, n is 0, 1, or 2.

Description

반도체 소자 밀봉용 에폭시 수지 조성물{Epoxy molding composition for encapsulating semiconductor device}Epoxy resin composition for encapsulating semiconductor device

본 발명은 반도체 소자 밀봉용 에폭시 수지 조성물에 관한 것으로, 보다 상세하게는 오르쏘 크레졸 노볼락계 에폭시 수지; 페놀 노볼락 수지, 크레졸 노볼락 수지 및 디시클로펜타디엔 수지로 구성되는 군으로부터 선택되는 1종 또는 2종 이상의 경화제; 경화촉진제; 변성 실리콘 오일; 무기충전제; 및 이소시아네이트 말단 써모폴리우레탄 수지를 포함하며 알루미늄 패드 부식에 대한 저항성이 우수한 반도체 소자 밀봉용 에폭시 수지 조성물에 관한 것이다.The present invention relates to an epoxy resin composition for sealing semiconductor elements, and more particularly, ortho cresol novolac epoxy resin; One or two or more curing agents selected from the group consisting of phenol novolak resins, cresol novolak resins and dicyclopentadiene resins; Curing accelerators; Modified silicone oils; Inorganic fillers; And an isocyanate-terminated thermopolyurethane resin and an epoxy resin composition for sealing semiconductor devices excellent in resistance to corrosion of aluminum pads.

수지 밀봉형 반도체 소자에서는 외부환경의 온도 및 습도 변화에 따른 열응력과 수분 침투에 따른 알루미늄 패드 부식으로 인한 고장 발생 빈도가 매우 높다. 고순도의 오르쏘 크레졸 노볼락(ortho-cresol novolac)계 에폭시 수지가 개발되고(참조: 일본특허 소 62-26649호), 산무수물 경화제를 대체할 수 있는 페놀(phenol) 수지가 개발된 이래, 반도체 소자의 알루미늄 배선의 부식발생 문제는 거의 해결되었으며, 특히 폴리이미드 수지를 이용한 반도체 소자의 표면 코팅으로 알루미늄 배선의 부식 문제를 거의 100% 억제하는데 성공하였다.In the resin-sealed semiconductor device, failure occurs due to corrosion of the aluminum pad due to thermal stress and moisture infiltration due to temperature and humidity changes in the external environment. Since the development of ortho-cresol novolac epoxy resin of high purity (Japanese Patent No. 62-26649) and a phenol resin that can replace an acid anhydride curing agent have been developed, The problem of corrosion of the aluminum wiring of the device has been almost solved. In particular, the surface coating of the semiconductor device using a polyimide resin successfully suppressed the corrosion problem of the aluminum wiring by almost 100%.

그러나, 전극으로 사용되는 알루미늄 패드는 골드 와이어(gold wire)와 접속시켜야 하기 때문에, 에폭시 수지 조성물과 직접적인 접촉을 하고 있어 부식이 발생하기 쉽고, 이에 따른 전기적 저항의 증가 등 치명적인 불량이 야기되고 있는 실정이다.However, since an aluminum pad used as an electrode needs to be connected to a gold wire, it is in direct contact with the epoxy resin composition, which is likely to cause corrosion, thereby causing fatal defects such as an increase in electrical resistance. to be.

현재 통상적으로 사용되고 있는 반도체 소자 알루미늄 패드의 부식 억제방법으로는 고순도의 에폭시 수지 및 경화제의 사용, 반도체 소자 밀봉재와 리드프레임 간의 부착력 강화제의 첨가에 의한 디라미네이션의 억제, 이온 포착제(ion trapper) 사용에 의한 불순물 함량의 저하, 및 무기 충전제 고충전에 의한 수분 흡습량 저하 등의 방법이 있다.As a method of inhibiting corrosion of a semiconductor device aluminum pad which is currently commonly used, use of high purity epoxy resin and hardening agent, suppression of delamination by addition of an adhesion enhancing agent between the semiconductor device sealing material and the lead frame, and use of ion trapper Decreases the impurity content and decreases the moisture absorption amount due to the high filling of the inorganic filler.

가장 효율적인 방법으로서 알루미늄 패드와의 부착강도가 향상되고 수분 흡습량이 적으며 불순물 농도가 낮은 새로운 에폭시 수지 조성물이 요구되고 있으나, 지금까지는 반도체의 특성이나 에폭시 수지 조성물의 취약으로 인하여 만족할 만한 에폭시 수지 조성물을 얻을 수 없었다.As the most efficient method, a new epoxy resin composition having improved adhesion strength to aluminum pads, low moisture absorption, and low impurity concentration is required. However, until now, satisfactory epoxy resin compositions are required due to the characteristics of the semiconductor and the weakness of the epoxy resin composition. Could not get

본 발명의 목적은 상기와 같은 종래기술의 문제점들을 해결하기 위한 것으로, 에폭시 수지 조성물과 반도체 소자 알루미늄 패드와의 부착강도를 향상시키는 부착력 강화제로서 이소시아네이트 말단 써모폴리우레탄 수지를 첨가함으로써 알루미늄 패드 부식에 대한 저항성 및 성형성이 향상된 반도체 소자 밀봉용 에폭시 수지 조성물을 제공하는 것이다.An object of the present invention is to solve the problems of the prior art as described above, by adding an isocyanate-terminated thermopolyurethane resin as an adhesion strength enhancer to improve the adhesion strength between the epoxy resin composition and the semiconductor device aluminum pads, It is to provide an epoxy resin composition for sealing semiconductor elements with improved resistance and moldability.

즉, 본 발명은 오르쏘 크레졸 노볼락계 에폭시 수지, 경화제, 경화촉진제, 변성 실리콘 오일 및 무기충전제를 포함하는 반도체 소자 밀봉용 에폭시 수지 조성물에 있어서, 이소시아네이트 말단 써모폴리우레탄 수지가 첨가된 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물을 제공한다.That is, the present invention is characterized in that an isocyanate-terminated thermopolyurethane resin is added in an epoxy resin composition for sealing an ortho cresol novolac-based epoxy resin, a curing agent, a curing accelerator, a modified silicone oil, and an inorganic filler. It provides the epoxy resin composition for sealing semiconductor elements.

이하, 본 발명의 반도체 소자 밀봉용 에폭시 수지 조성물의 각 구성 성분에 대하여 더욱 상세히 설명한다.Hereinafter, each structural component of the epoxy resin composition for semiconductor element sealing of this invention is demonstrated in detail.

본 발명에서 사용된 에폭시 수지(이하 성분(1)이라 칭함)는 하기 화학식 1의 구조를 갖는 에폭시 당량이 180~210인 고순도의 오르쏘 크레졸 노볼락 수지이다.The epoxy resin (hereinafter referred to as component (1)) used in the present invention is a high purity ortho cresol novolac resin having an epoxy equivalent of 180 to 210 having a structure of the following formula (1).

(상기 화학식중 n은 0, 1 또는 2임)Where n is 0, 1 or 2

상기 성분(1)의 함량은 전체 조성물에 대하여 9.00~15.00중량%인 것이 바람직하며, 상기 범위를 벗어나면 본 발명의 목적을 달성할 수 없다.The content of the component (1) is preferably 9.00 to 15.00% by weight based on the total composition, it can not achieve the object of the present invention outside the above range.

본 발명에서 사용된 경화제(이하 성분(2)라 칭함)로서는 수산화기가 두 개이상이며 수산화기 당량이 100~200인 페놀 노볼락 수지, 크레졸 노볼락 수지 및 디시클로펜타디엔 수지로 구성되는 군으로부터 선택되는 1종 또는 2종 이상을 혼합하여 사용하며, 바람직하게는 가격 및 성형성의 측면에서 하기 화학식 2의 페놀 노볼락 수지를 전체 경화제 혼합물에 대하여 50중량% 이상 사용한다.The curing agent used in the present invention (hereinafter referred to as component (2)) is selected from the group consisting of phenol novolac resins, cresol novolac resins and dicyclopentadiene resins having two or more hydroxyl groups and a hydroxyl equivalent weight of 100 to 200. It is used one or two or more mixtures are used, preferably in terms of price and moldability, at least 50% by weight of the phenol novolak resin of the formula (2) to the total curing agent mixture.

(상기 화학식중 n은 0, 1 또는 2임)Where n is 0, 1 or 2

상기 성분(2)의 함량은 성분(2)의 수산화기 당량에 대한 성분(1)의 에폭시 당량의 조성비가 0.75~1.25의 범위내에 들도록 결정된다. 이때, 상기 성분(2)의 함량은 전체 조성물에 대해서 5.00~10.00중량%에 해당된다. 상기 함량이 5.00중량% 미만이면 경화반응이 충분히 이루어지지 않으며, 10.00중량%를 초과하면 밀봉 소재내에 잔류물이 형성되어 신뢰성이 저하되고 비경제적이므로 좋지 않다.The content of the component (2) is determined so that the composition ratio of the epoxy equivalent of the component (1) to the hydroxyl equivalent of the component (2) falls within the range of 0.75 to 1.25. At this time, the content of the component (2) corresponds to 5.00 ~ 10.00% by weight based on the total composition. If the content is less than 5.00% by weight, the curing reaction is not sufficiently achieved. If the content is more than 10.00% by weight, residues are formed in the sealing material, so that the reliability is lowered and it is not economical.

본 발명에서 사용된 경화촉진제(이하 성분(3)이라 칭함)로서는 하기 화학식 3으로 나타내어지는 트리페닐포스핀계 경화촉진제를 사용하는 것이 바람직하다.As the curing accelerator (hereinafter referred to as component (3)) used in the present invention, it is preferable to use a triphenylphosphine-based curing accelerator represented by the following formula (3).

상기 성분(3)의 함량은 전체 조성물에 대하여 0.01~0.40중량%인 것이 바람직하다. 상기 함량이 0.01중량% 미만이면 경화 속도가 느려져서 생산성이 떨어져 좋지 않고, 0.40중량%를 초과하면 원하는 경화 특성을 얻을 수 없을 뿐만 아니라 보관 안정성이 나빠져서 좋지 않다.The content of the component (3) is preferably 0.01 to 0.40% by weight based on the total composition. If the content is less than 0.01% by weight, the curing rate is slow and the productivity is not good, and if the content is more than 0.40% by weight, the desired curing properties are not obtained, and storage stability is not good.

본 발명에서 사용된 변성 실리콘 오일(이하 성분(4)라 칭함)은 통상의 에폭시 변성 실리콘 오일이다.The modified silicone oil (hereinafter referred to as component (4)) used in the present invention is a conventional epoxy modified silicone oil.

상기 성분(4)의 함량은 전체 조성물에 대해서 0.10 내지 0.20중량%인 것이 바람직하며, 상기 범위를 벗어나면 본 발명의 목적을 달성할 수 없다.The content of the component (4) is preferably 0.10 to 0.20% by weight based on the total composition, it can not achieve the object of the present invention outside the above range.

본 발명에서 사용된 무기 충전제(이하 성분(5)라 칭함)로서는 평균 입자크기가 0.1~35.0㎛인 용융 실리카를 사용하는 것이 바람직하다. 상기 실리카의 형태는 분쇄형과 구형의 조성비가 2대8~8대2인 혼합형이 좋다.As the inorganic filler (hereinafter referred to as component (5)) used in the present invention, it is preferable to use fused silica having an average particle size of 0.1 to 35.0 µm. The form of the silica is preferably a mixed type of the composition ratio of the crushing type and the spherical form of 2 to 8 to 8 to 2.

상기 성분(5)의 함량은 전체 조성물에 대해서 75.00~85.00중량%인 것이 바람직하다. 상기 함량이 75.00중량% 미만이면 충분한 강도를 실현할 수 없으며, 수분의 침투가 용이해져 알루미늄 패드 부식의 치명적인 원인이 된다. 반면 상기 함량이 85.00중량%를 초과하면 조성물의 유동 특성이 저하되어 성형성이 나빠질 우려가 있어서 좋지 않다.The content of the component (5) is preferably 75.00 to 85.00% by weight based on the total composition. If the content is less than 75.00% by weight, sufficient strength cannot be realized, and the penetration of moisture becomes easy, which is a fatal cause of corrosion of the aluminum pad. On the other hand, if the content exceeds 85.00% by weight, the flow characteristics of the composition is lowered, which is not good because there is a fear of poor moldability.

본 발명에서는 에폭시 수지 조성물과 반도체 소자 알루미늄 패드와의 부착강도를 향상시키는 부착력 강화제로서 분자량 3000~200000인 이소시아네이트 말단 써모폴리우레탄 수지(이하 성분(6)이라 칭함)가 사용된다.In the present invention, an isocyanate-terminated thermopolyurethane resin (hereinafter referred to as component (6)) having a molecular weight of 3000 to 200000 is used as an adhesion strength improving agent for improving the adhesion strength between the epoxy resin composition and the semiconductor element aluminum pad.

상기 성분(6)의 함량은 전체 조성물에 대해서 0.20~2.00중량%인 것이 바람직하다. 상기 함량이 0.20중량% 미만이면 적용효과가 미미하고, 2.00중량%를 초과하면 흡습성 증가, 경화도 저하, 굴곡강도 저하 등의 역효과가 초래된다.The content of the component (6) is preferably 0.20 to 2.00% by weight based on the total composition. If the content is less than 0.20% by weight, the application effect is insignificant, and when the content is more than 2.00% by weight, adverse effects such as increase in hygroscopicity, decrease in curing degree, and decrease in flexural strength are caused.

이외에도, 본 발명의 에폭시 수지 조성물에는 브로모 에폭시와 같은 난연제; 삼산화안티몬, 수산화알루미나, 오산화안티몬 등의 난연조제; 고급 지방산, 고급 지방산 금속염, 에스테르계 왁스 등의 이형제; 카본블랙, 유·무기염료 등의 착색제; 에폭시 실란, 아미노 실란, 알킬 실란 등의 커플링제 등을 필요에 따라 첨가할 수 있다.In addition, the epoxy resin composition of the present invention includes a flame retardant such as bromo epoxy; Flame retardant aids such as antimony trioxide, alumina hydroxide and antimony pentoxide; Mold release agents such as higher fatty acids, higher fatty acid metal salts, and ester waxes; Coloring agents such as carbon black and organic and inorganic dyes; Coupling agents, such as an epoxy silane, an amino silane, and an alkyl silane, etc. can be added as needed.

본 발명의 에폭시 수지 조성물은 상술한 성분들을 통상의 헨셀(Hanssel) 믹서 또는 뢰디게(Loedige) 믹서를 이용하여 균일하게 충분히 혼합한 후, 롤밀(roll mill) 또는 니이더(kneader)로 용융혼련하고, 냉각 및 분쇄하는 공정을 거쳐 최종 분말 제품으로서 제조된다.The epoxy resin composition of the present invention is uniformly sufficiently mixed with the above-described components using a conventional Henssel mixer or Loedige mixer, and then melt kneaded with a roll mill or kneader. It is prepared as a final powder product through a process of cooling, grinding and grinding.

이와 같이 제조된 에폭시 수지 조성물을 사용하여 반도체 소자를 밀봉하는 방법으로는 저압 트랜스퍼 성형법이 가장 일반적으로 사용되나, 인젝션(injection) 또는 캐스팅(casting) 등의 방법으로도 성형 가능하다.As a method of sealing a semiconductor device using the epoxy resin composition prepared as described above, a low pressure transfer molding method is most commonly used, but it can also be molded by injection or casting.

이하, 실시예를 통하여 본 발명을 보다 구체적으로 설명하고자 하나, 이러한 실시예들은 단지 설명의 목적을 위한 것으로 본 발명을 제한하는 것으로 해석되어서는 안된다.Hereinafter, the present invention will be described in more detail with reference to examples, but these examples are for illustrative purposes only and should not be construed as limiting the present invention.

실시예 1~4Examples 1-4

하기 표 1에 나타낸 바와 같이 각 성분들을 평량한 후, 헨셀 믹서로 균일하게 혼합하여 분말 상태의 1차 조성물을 제조하고, 믹싱 2-롤밀을 이용하여 100℃에서 10분간 용융혼련한 다음, 냉각 및 분쇄공정을 거쳐 최종 에폭시 수지 조성물을 제조하였다. 이렇게 하여 얻어진 에폭시 수지 조성물 각각에 대하여 물성 평가를 하였으며, 평가 결과를 하기 표 1에 나타내었다.As shown in Table 1 below, each component was weighed, and then uniformly mixed with a Henschel mixer to prepare a powdery primary composition, melt-kneaded at 100 ° C. for 10 minutes using a mixing 2-roll mill, and then cooled and The final epoxy resin composition was prepared through a grinding process. The physical properties of each of the epoxy resin compositions thus obtained were evaluated, and the evaluation results are shown in Table 1 below.

비교예 1~3Comparative Examples 1 to 3

하기 표 2에 나타낸 바와 같이 각 성분들을 평량한 후, 상기 실시예에서와 동일한 방법으로 에폭시 수지 조성물을 제조하였다. 이렇게 하여 얻어진 에폭시 수지 조성물 각각에 대하여 물성 평가를 하였으며, 평가 결과를 하기 표 2에 나타내었다.After weighing each component as shown in Table 2 below, an epoxy resin composition was prepared in the same manner as in Example. The physical properties of each of the epoxy resin compositions thus obtained were evaluated, and the evaluation results are shown in Table 2 below.

(단위: 중량%)(Unit: weight%) 구성성분Ingredient 실시예 1Example 1 실시예 2Example 2 실시예 3Example 3 실시예 4Example 4 에폭시 수지(오르쏘 크레졸 노볼락 수지)Epoxy Resin (Ortho Cresol Novolak Resin) 13.6613.66 13.6613.66 13.6613.66 13.6613.66 경화제(페놀 노볼락 수지)Curing agent (phenol novolak resin) 6.946.94 6.946.94 6.946.94 6.946.94 트리페닐포스핀계 경화촉진제Triphenylphosphine Curing Accelerator 0.240.24 0.240.24 0.240.24 0.240.24 이소시아네이트 말단써모폴리우레탄 수지Isocyanate Terminated Thermopolyurethane Resin 0.200.20 0.400.40 1.001.00 2.002.00 실리카Silica 76.076.0 76.076.0 76.076.0 76.076.0 에폭시 변성 실리콘 오일Epoxy modified silicone oil 0.130.13 0.130.13 0.130.13 0.130.13 카본 블랙Carbon black 0.270.27 0.270.27 0.270.27 0.270.27 카르나우바 왁스Carnauba Wax 0.250.25 0.250.25 0.250.25 0.250.25 기타 첨가제Other additives 2.312.31 2.112.11 1.511.51 1.511.51 스파이럴 플로우(inch)Spiral Flow (inch) 3333 3232 3131 2727 열시강도(Shore-D)Thermal strength (Shore-D) 7474 7373 7070 6767 부착강도(kgf)Adhesion strength (kgf) 4040 4242 4646 4747 유리 전이 온도(℃)Glass transition temperature (℃) 152152 151151 148148 146146 흡습률(중량%)Hygroscopicity (wt%) 0.410.41 0.410.41 0.430.43 0.460.46 부식발생횟수Corrosion frequency 0/500/50 0/500/50 0/500/50 0/500/50 성형성(스티킹 발생횟수)Formability (number of sticking occurrences) 0/500/50 0/500/50 0/500/50 0/500/50

(단위: 중량%)(Unit: weight%) 구성성분Ingredient 비교예 1Comparative Example 1 비교예 2Comparative Example 2 비교예 3Comparative Example 3 에폭시 수지(오르쏘 크레졸 노볼락 수지)Epoxy Resin (Ortho Cresol Novolak Resin) 13.6613.66 13.6613.66 13.6613.66 경화제(페놀 노볼락 수지)Curing agent (phenol novolak resin) 6.946.94 6.946.94 6.946.94 트리페닐포스핀계 경화촉진제Triphenylphosphine Curing Accelerator 0.240.24 0.240.24 0.240.24 이소시아네이트 말단써모폴리우레탄 수지Isocyanate Terminated Thermopolyurethane Resin 0.000.00 0.100.10 2.202.20 실리카Silica 76.076.0 76.076.0 76.076.0 에폭시 변성 실리콘 오일Epoxy modified silicone oil 0.130.13 0.130.13 0.130.13 카본 블랙Carbon black 0.270.27 0.270.27 0.270.27 카르나우바 왁스Carnauba Wax 0.250.25 0.250.25 0.250.25 기타 첨가제Other additives 2.512.51 2.412.41 0.310.31 스파이럴 플로우(inch)Spiral Flow (inch) 3636 3434 2525 열시강도(Shore-D)Thermal strength (Shore-D) 7575 7474 6464 부착강도(kgf)Adhesion strength (kgf) 3030 3232 4747 유리 전이 온도(℃)Glass transition temperature (℃) 154154 153153 141141 흡습률(중량%)Hygroscopicity (wt%) 0.400.40 0.410.41 0.520.52 부식발생횟수Corrosion frequency 5/505/50 2/502/50 1/501/50 성형성(스티킹 발생횟수)Formability (number of sticking occurrences) 0/500/50 1/501/50 12/5012/50

[물성 평가 방법][Property evaluation method]

1) 스파이럴 플로우1) Spiral Flow

: EMMI 규격을 기준으로 금형을 제작하여 성형온도 175℃, 성형압력 70㎏f/㎠인 조건하에서 유동길이를 평가하였다.: Mold was manufactured based on EMMI standard and flow length was evaluated under molding condition of 175 ℃ and molding pressure of 70kgf / cm2.

2) 열시강도2) thermal strength

: Shore-D법으로 평가하였다.: It evaluated by Shore-D method.

3) 부착강도3) Attachment strength

: 리드 프레임(합금 42) 및 에폭시 봉지재 사이의 인장력(UTM)을 평가하였다.: Tensile force (UTM) between the lead frame (alloy 42) and the epoxy encapsulant was evaluated.

4) 유리 전이 온도4) glass transition temperature

: 굴곡 실험용 몰드를 사용하여 시험편을 제작한 후 175℃에서 6시간 동안 후경화시켜 측정하였다.: After the test piece was produced using the bending test mold, it was measured by post-curing at 175 ° C. for 6 hours.

5) 흡습률5) moisture absorption rate

: 굴곡 실험용 몰드를 사용하여 시험편을 제작하여 175℃에서 5시간 동안 후경화시킨 후, PCT(pressure cooker tester)로 2기압하, 120℃/100%RH의 항온항습 조건하에서 24시간 동안 흡습시킨 다음 흡습률을 평가하였다.: A test piece was prepared using a bending test mold and post-cured at 175 ° C. for 5 hours, followed by moisture absorption at 24 ° C. under a pressure cooker tester (PCT) at 120 ° C./100% RH for 24 hours. The moisture absorption rate was evaluated.

6) 부식 발생6) corrosion occurrence

: 20 SOP(small outline package)를 성형하여 후경화시킨 후, 85℃/65%RH의 항온항습 조건하에서 168시간 동안 흡습시킨 다음, 245℃에서 10초 동안 IR 리플로우(reflow)를 3회 통과시켜 전처리하였다. 이어서, PCT로 121℃/100%RH의 항온 항습 조건하에서 168 시간 동안 흡습시킨 다음, 알루미늄 패드의 부식발생 정도를 평가하였다. : 20 SOP (small outline package) was molded and post-cured, and then absorbed for 168 hours under constant temperature and humidity conditions of 85 ° C / 65% RH, followed by three passes of IR reflow for 10 seconds at 245 ° C. Pretreatment. Subsequently, PCT was absorbed for 168 hours under constant temperature and humidity conditions of 121 ° C / 100% RH, and then the degree of corrosion of the aluminum pad was evaluated.

7) 성형성7) formability

: 20 SOP를 성형하여 스티킹(sticking) 발생횟수를 평가하였다.: 20 SOPs were molded to evaluate the number of sticking occurrences.

상기 표 1로부터 알 수 있듯이, 실시예 1~3에 의한 에폭시 수지 조성물을 사용하여 반도체 소자를 밀봉할 경우, 수지 조성물과 리드 프레임 간의 부착력이 크게 향상되어 반도체 소자 내부로의 수분침투가 억제되기 때문에, 알루미늄 패드 부식발생이 예방되고 성형성 또한 우수하다.As can be seen from Table 1, when the semiconductor element is sealed using the epoxy resin composition according to Examples 1 to 3, since the adhesion between the resin composition and the lead frame is greatly improved, moisture penetration into the semiconductor element is suppressed. Also, aluminum pad corrosion is prevented and formability is excellent.

반면 상기 표 2로부터 알 수 있듯이, 비교예 1~2에서와 같이 이소시아네이트말단 써모폴리우레탄 수지를 전혀 첨가하지 않거나 또는 전체 에폭시 수지 조성물의 0.20중량% 이하로 첨가할 경우 수지 조성물과 리드프레임 간의 부착력 강화에 대한 효과가 미약하며, 반면에 비교예 3에서와 같이 2.00중량% 이상으로 첨가할 경우 부착력 향상은 포화수준에 이르나 반대급부적으로 흡습률이 급격히 증가하고 열시강도가 저하되며 성형시 스티킹(sticking)이 다수 발생하는 등 여러 가지 작업상의 문제점들이 발견되며 칩 부식현상까지도 발생하게 된다.On the other hand, as can be seen from Table 2, when the isocyanate-terminated thermopolyurethane resin is not added at all or when added to 0.20% by weight or less of the total epoxy resin composition as in Comparative Examples 1 to 2, the adhesion between the resin composition and the lead frame is enhanced. On the other hand, when added at more than 2.00% by weight as in Comparative Example 3, the adhesion improvement reaches saturation level, but the moisture absorption rate rapidly increases, the thermal strength decreases, and the sticking during molding ( Many working problems are found, including many stickings, and even chip corrosion.

이상에서 상세히 설명한 바와 같이, 본 발명의 반도체 소자 밀봉용 에폭시 수지 조성물은 성형시 작업성이 우수하고 고온다습한 조건하에서도 알루미늄 패드의 부식에 대한 저항성이 우수하므로, 알루미늄 패드 부식에 의한 반도체 소자의 불량을 해결할 수 있다.As described in detail above, the epoxy resin composition for sealing a semiconductor device of the present invention has excellent workability during molding and excellent resistance to corrosion of the aluminum pad even under high temperature and high humidity conditions. The defect can be solved.

Claims (5)

오르쏘 크레졸 노볼락계 에폭시 수지, 경화제, 경화촉진제, 변성 실리콘 오일 및 무기충전제를 포함하는 반도체 소자 밀봉용 에폭시 수지 조성물에 있어서, 이소시아네이트 말단 써모폴리우레탄 수지가 첨가된 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물.An epoxy resin composition for sealing semiconductor elements comprising an ortho cresol novolac epoxy resin, a curing agent, a curing accelerator, a modified silicone oil, and an inorganic filler, wherein an isocyanate-terminated thermopolyurethane resin is added. Epoxy resin composition. 제 1항에 있어서,The method of claim 1, (1)하기 화학식 1의 오르쏘 크레졸 노볼락계 에폭시 수지 9.00~15.00중량%,(1) 9.00 to 15.00 wt% of ortho cresol novolac epoxy resin of the following formula (1), (2)수산화기가 두 개 이상이며 수산화기 당량이 100~200인 페놀 노볼락 수지, 크레졸 노볼락 수지 및 디시클로펜타디엔 수지로 구성되는 군으로부터 선택되는 1종 또는 2종 이상의 경화제 5.00~10.00중량%,(2) 5.00 to 10.00% by weight of one or two or more curing agents selected from the group consisting of phenol novolac resins, cresol novolac resins and dicyclopentadiene resins having two or more hydroxyl groups and a hydroxyl equivalent of 100 to 200; , (3)트리페닐포스핀계 경화 촉진제 0.01~0.40중량%,(3) 0.01 to 0.40% by weight of triphenylphosphine-based curing accelerator, (4)변성 실리콘 오일 0.10~0.20중량%,(4) 0.10 to 0.20% by weight of modified silicone oil, (5)무기 충전제 75.00~85.00중량% 및(5) 75.00-85.00 wt% of inorganic fillers and (6)분자량 3000~200000인 이소시아네이트 말단(6) isocyanate terminal with molecular weight 3000-20000 써모폴리우레탄 수지 0.20~2.00중량%Thermopolyurethane resin 0.20 ~ 2.00 wt% 를 포함하는 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물.Epoxy resin composition for sealing semiconductor elements comprising a. [화학식 1][Formula 1] (상기 화학식중 n은 0, 1 또는 2임)Where n is 0, 1 or 2 제 2항에 있어서,The method of claim 2, 상기 경화제 혼합물중 하기 화학식 2의 페놀 노볼락 수지의 함량이 50중량% 이상인 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물.Epoxy resin composition for sealing a semiconductor device, characterized in that the content of the phenol novolak resin of the formula (2) in the curing agent mixture is 50% by weight or more. [화학식 2][Formula 2] (상기 화학식중 n은 0, 1 또는 2임)Where n is 0, 1 or 2 제 2항에 있어서,The method of claim 2, 상기 트리페닐포스핀계 경화촉진제가 하기 화학식 3의 구조를 갖는 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물.The triphenyl phosphine-based curing accelerator has a structure of the formula (3) below epoxy resin composition for semiconductor element sealing. [화학식 3][Formula 3] 제 2항에 있어서,The method of claim 2, 상기 무기 충전제는 평균 입자크기가 0.1~35.0㎛이고 분쇄형과 구형의 조성비가 2대8~8대2인 용융 실리카인 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물.The inorganic filler is an epoxy resin composition for semiconductor element sealing, characterized in that the average particle size is 0.1 ~ 35.0㎛ and the fused silica of the composition ratio of the crushing type and the spherical shape of 2 to 8 to 8 to 2.
KR10-2000-0083669A 2000-12-28 2000-12-28 Epoxy molding composition for encapsulating semiconductor device KR100413358B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR10-2000-0083669A KR100413358B1 (en) 2000-12-28 2000-12-28 Epoxy molding composition for encapsulating semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-2000-0083669A KR100413358B1 (en) 2000-12-28 2000-12-28 Epoxy molding composition for encapsulating semiconductor device

Publications (2)

Publication Number Publication Date
KR20020054548A true KR20020054548A (en) 2002-07-08
KR100413358B1 KR100413358B1 (en) 2003-12-31

Family

ID=27687275

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2000-0083669A KR100413358B1 (en) 2000-12-28 2000-12-28 Epoxy molding composition for encapsulating semiconductor device

Country Status (1)

Country Link
KR (1) KR100413358B1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100652830B1 (en) 2005-12-29 2006-12-01 제일모직주식회사 Epoxy resin composition for packaging semiconductor device
KR101139759B1 (en) 2009-09-21 2012-04-26 도레이첨단소재 주식회사 Resin composition for no-flow underfill

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61223024A (en) * 1985-03-29 1986-10-03 Fujitsu Ltd Epoxy resin composition for sealing semiconductor
JPS63132931A (en) * 1986-11-25 1988-06-04 Toshiba Corp Epoxy resin composition for sealing semiconductor
JPS63135417A (en) * 1986-11-27 1988-06-07 Toshiba Corp Epoxy resin composition for sealing semiconductor
JPH04258626A (en) * 1991-02-09 1992-09-14 Toshiba Chem Corp Sealing resin composition and sealed semiconductor device

Also Published As

Publication number Publication date
KR100413358B1 (en) 2003-12-31

Similar Documents

Publication Publication Date Title
JP5130912B2 (en) Epoxy resin composition and semiconductor device
KR100413358B1 (en) Epoxy molding composition for encapsulating semiconductor device
JP2002220434A (en) Epoxy resin composition and semiconductor device
KR100413356B1 (en) Epoxy molding composition for encapsulating semiconductor device
KR100201708B1 (en) Epoxy resin composition for encapsulation of semiconductor
KR100364241B1 (en) Epoxy resin composition for sealing of semiconductor device
JPH0588904B2 (en)
KR100364239B1 (en) Epoxy resin composition for sealing semiconductor device
KR100504604B1 (en) Epoxy molding compound for sealing of semiconductor device
JP2002309067A (en) Epoxy resin composition for sealing and semiconductor device
KR100413359B1 (en) Epoxy molding composition for encapsulating semiconductor device
JP4687195B2 (en) Epoxy resin composition for semiconductor encapsulation and semiconductor device
KR100364244B1 (en) Epoxy resin composition for encapsulating semiconductor device
KR100479853B1 (en) Method for preparing epoxy resin composition for semiconductor encapsulant and the composition
JP2000226497A (en) Epoxy resin composition and semiconductor device
JP3093051B2 (en) Epoxy resin composition
JP2000186183A (en) Epoxy resin composition for sealing and semiconductor device
JP2003155329A (en) Epoxy resin composition and semiconductor device
JP3463615B2 (en) Epoxy resin composition for semiconductor encapsulation and semiconductor device using the same
KR19990001511A (en) Epoxy Resin Compositions for Semiconductor Device Sealing
JP3317473B2 (en) Epoxy resin composition
JPH04103619A (en) Epoxy resin composition
KR100671128B1 (en) Epoxy Resin Composition for Packaging Semiconductor Device
JPH07126490A (en) Epoxy resin composition
JPH0723425B2 (en) Resin-sealed semiconductor device

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20081001

Year of fee payment: 6

LAPS Lapse due to unpaid annual fee