KR20020050683A - A process of a vacuum chamber in a vacuum evaporator - Google Patents

A process of a vacuum chamber in a vacuum evaporator Download PDF

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Publication number
KR20020050683A
KR20020050683A KR1020000079966A KR20000079966A KR20020050683A KR 20020050683 A KR20020050683 A KR 20020050683A KR 1020000079966 A KR1020000079966 A KR 1020000079966A KR 20000079966 A KR20000079966 A KR 20000079966A KR 20020050683 A KR20020050683 A KR 20020050683A
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South Korea
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quartz
vacuum chamber
chamber
mold
vacuum
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KR1020000079966A
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Korean (ko)
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김현우
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김현우
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    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B20/00Processes specially adapted for the production of quartz or fused silica articles, not otherwise provided for
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation

Abstract

PURPOSE: A fabrication method of a quartz vacuum chamber is provided to reduce stability problems due to a non-uniform thickness of a quartz vacuum chamber and to improve an efficiency by removing a connecting portion of a center region of the quartz vacuum chamber. CONSTITUTION: After cutting a quartz pipe(10) having a defined diameter by a defined length, a chamber mold(20) fixed on the quartz pipe(10) for supporting so as to form a semisphere. A number of quartz parts(30,31) are respectively connected by a melted quartz using a burner flame. Then, a sub-mold is formed on the chamber mold(20). A semisphere is formed by connecting collections of the quartz parts(30,31) with the quartz pipe(10) using a melted quartz. At this time, the center region of the quartz vacuum chamber is seamlessly formed, thereby solving many stability problems.

Description

석영 진공 챔버 제조 방법{A PROCESS OF A VACUUM CHAMBER IN A VACUUM EVAPORATOR}A vacuum process chamber manufacturing method {A PROCESS OF A VACUUM CHAMBER IN A VACUUM EVAPORATOR}

본 발명은 석영 진공 챔버의 제조 방법에 관한 것으로, 보다 상세하게는 반도체 제조 공정에 사용되는 진공 증착기 등의 석영 진공 챔버를 제조하는 방법에 관한 것이다.The present invention relates to a method of manufacturing a quartz vacuum chamber, and more particularly, to a method of manufacturing a quartz vacuum chamber such as a vacuum evaporator used in a semiconductor manufacturing process.

일반적으로, 반도체 제조 공정에 적용되는 소위 진공 챔버는 고온 및 고압에도 견딜 수 있는 소재인 석영(Quartz, SiO2)을 주로 이용하고 있으며, 진공 증착기 등의 장비 구성 요소이다.In general, a so-called vacuum chamber applied to a semiconductor manufacturing process mainly uses quartz (Quartz, SiO 2), which is a material capable of withstanding high temperature and high pressure, and is an equipment component such as a vacuum evaporator.

그러므로, 진공 챔버는 그 두께가 일정할수록, 고온 고압의 상태가 챔버내에 고르게 분포될 수 있도록 제조되는 것이 가장 이상적이라 하겠다. 그러나 기존의 방법으로 제조된 석영 챔버들은 고가임에도 불구하고 그 두께가 일정하지 않거나(도4, 종래의 제조 방법) 특정 부위가 용융 접합에 의해 상대적으로 약한 소지가 있어(도5, 대한민국 특허 제0263038) 고온 고압의 상태가 가해질 경우 파손되는 경우가 있고, 이로 인한 생산성 저하가 초래된다.Therefore, it is most ideal that the vacuum chamber is manufactured so that the state of the high temperature and high pressure is evenly distributed in the chamber as the thickness thereof is constant. However, although the quartz chambers manufactured by the conventional method are expensive, their thickness is not constant (FIG. 4, the conventional manufacturing method) or the specific parts are relatively weak due to melt bonding (FIG. 5, Korean Patent No. 0263038). ) When high temperature and high pressure are applied, it may be broken, resulting in a decrease in productivity.

이러한 불합리한 점을 개선하기 위하여, 본 발명은 석영 진공 챔버를 제조함에 있어서 그 두께를 최대한 일정하게 하고 특정한 부위(반구의 중앙)에 용융 접착을 형성하지 않으므로 챔버에 가해지는 고온 및 고압을 분산 시킬 수 있는 방법으로 제조하며, 반구를 형성함에 있어 그 크기를 디자인하여 정확하게 맞추어야 하는 불편을 해소하고, 석영 진공 챔버의 제조 시 제한되었던 크기에 유연성을 부여하여 필요한 경우는 챔버 금형 만을 개조 함으로서 해결할 수 있도록 하는 것을 본 발명의 목적으로 한다.In order to remedy this irrationality, the present invention can make the thickness of the quartz vacuum chamber as constant as possible and does not form a melt bond at a specific part (center of the hemisphere), so that the high temperature and high pressure applied to the chamber can be dispersed. To reduce the inconvenience of designing the size of the hemisphere and to adjust the size precisely, and to provide flexibility to the size that was limited in the manufacture of the quartz vacuum chamber so that it can be solved by modifying the chamber mold only if necessary. It is an object of the present invention.

[종래의 진공 챔버 제조 방법의 문제점][Problems of Conventional Vacuum Chamber Manufacturing Method]

[종래 방법][Original method]

필요한 크기의 석영 관(10)의 양단 또는 일단을 고정척(50)에 고정시키고, 석영 관을 일정한 방향과 속도로 회전시키면서 그 가운데에 버너 화염(60)을 분사하여 용융 시키면서 반구 모양을 형성하였다.Both ends or one end of the quartz tube 10 of the required size is fixed to the fixed chuck 50, and while rotating the quartz tube in a constant direction and speed, a burner flame 60 is sprayed in the center to form a hemispherical shape. .

이 방법의 문제점은, 실제 제조할 수 있는 석영 관의 직경이 최대 350mm로 제한되고, 용융시의 회전 속도와 버너 화염의 온도 및 거리등에 따라 그 형성되는 반구의 두께가 다르게 되며, 반구가 진원의 반구로 형성되지 못하여 챔버에 가해지는 고온 고압이 고르게 형성되지 않고, 석영 관의 손실로 인해 경제적 손실이 발생되는 등의 문제가 있다.The problem with this method is that the diameter of the quartz tube that can be actually manufactured is limited to a maximum of 350 mm, and the thickness of the hemispheres to be formed varies depending on the rotational speed during melting and the temperature and distance of the burner flame. There is a problem that the high temperature and high pressure applied to the chamber is not formed evenly because hemispheres are not formed, and economic losses occur due to the loss of the quartz tube.

[대한민국 특허 제0263038 방법][Korean Patent No. 0263038 Method]

필요한 크기의 석영 관을 크라운 형(도5)으로 정확하게 디자인하여 레이저로 절단한 후 챔버 금형을 위치시키고 버너 화염을 분사하여 크라운 모양을 챔버 금형 위에 포개고, 이를 용융 접합하여 반구 형의 챔버를 제조하는 방법이다.After precisely designing the quartz tube of the required size into a crown type (Fig. 5), cutting it with a laser, positioning the chamber mold and spraying a burner flame to superimpose the crown shape on the chamber mold, and melting and joining the same to manufacture a hemispherical chamber. Way.

이 방법의 문제점은, 챔버의 직경에 따라서 정확히 크라운을 형성하여야만 반구를 제대로 형성시킬 수 있고, 실수로 크라운 중의 어느 한 부위라도 파손될 경우에는 그 형태를 갖추기 위해서는 또 다른 모양으로 레이저 절단을 해야 하고, 크라운을 정밀하게 형성하여 제조한 경우 반구의 중앙에 용융 접합 부위가 형성되어 있어 그 부분이 특히 약한 문제점이 있다.The problem with this method is that the crown must be formed exactly according to the diameter of the chamber to form the hemisphere correctly, and if any part of the crown is accidentally broken, the laser must be cut into another shape to form the shape. When the crown is manufactured by precisely forming the molten junction part in the center of the hemisphere, the part is particularly weak.

본 발명은 상기한 종래의 방법들에 대한 문제점을 해결하기 위한 것으로, 석영 진공 챔버의 제조 방법을 개선하여 경제적이고 생산성이 향상된 제조 방법을 제공하는데 그 목적이 있다.The present invention is to solve the problems of the conventional methods described above, and an object of the present invention is to improve the manufacturing method of the quartz vacuum chamber to provide an economical and productivity improved manufacturing method.

본 발명은 상기한 목적을 달성하기 위하여 석영 진공 챔버를 제조함에 있어, 소위 필요한 직경의 석영관(10)을 절단하여, 챔버 금형에 위치 시키고, 반구의 크기에 따라 미리 절단된 석영관(10)과 동일한 두께의 석영 평판 조각(다각형)들을 보조 금형(40)과 버너 화염(60)으로 용융 접합하여 반구 형태를 갖추는 단계와; 용융 접합 부위를 매끄럽게 가공하는 단계를 포함하는 제조 방법으로 구성된다.In the present invention, in manufacturing a quartz vacuum chamber to achieve the above object, the quartz tube 10 of the so-called required diameter is cut, placed in the chamber mold, and the quartz tube 10 previously cut according to the size of the hemisphere. Melting and joining quartz plate pieces (polygons) having the same thickness as the auxiliary mold 40 and the burner flame 60 to form a hemispherical shape; It consists of a manufacturing method comprising the step of smoothing the melt bonding site.

도 1은 진공 챔버의 모형에 대한 정면도1 is a front view of a model of a vacuum chamber

도 2 및 3은 본 발명에 따라 제조된 석영 진공 챔버의 정면도 및 평면도2 and 3 are a front view and a plan view of a quartz vacuum chamber made in accordance with the present invention.

도 4는 종래의 진공 챔버 제조 방법 설명도Figure 4 is a diagram illustrating a conventional vacuum chamber manufacturing method

도 5는 대한민국 특허 제0263038에 의한 진공 챔버 제조 방법 설명도5 is an explanatory view of a vacuum chamber manufacturing method according to Korean Patent No. 0263038

도 6은 실시 예 2, 실시 예 3 의 평면도 및 챔버 금형의 설명도6 is an explanatory view of a plan view and a chamber mold of Example 2 and Example 3;

도면의 주요 부분에 대한 부호 설명 Explanation of symbols for the main parts of the drawings

10 : 석영 관 20 : 챔버 금형10: quartz tube 20: chamber mold

30 : 실시 예 2의 다각형의 석영 평판 조각으로 제조한 평면도30: top view made of a polygonal quartz plate piece of Example 2

31 : 실시 예 3의 다각형의 석영 평판 조각으로 제조한 평면도31: top view made of a polygonal quartz plate piece of Example 3

40 : 반구 성형용 보조 금형 50 : 석영관 고정 척40: auxiliary mold for hemisphere molding 50: quartz tube fixing chuck

60 : 버너 화염60: burner flame

본 발명에 의한 석영 진공 챔버를 제조하는 방법을 각 실시 예를 통하여 상세히 설명한다.The method of manufacturing a quartz vacuum chamber according to the present invention will be described in detail through each embodiment.

[실시 예 1]Example 1

도 2와 도 3은 본 발명의 실시 예 1의 정면도와 평면도로서 석영관(10)과 석영 관의 반구 원둘레에 해당하는 길이를 갖는 직 사각형의 석영 평판 조각 1개와 그 좌 우에 접합될 사각형의 석영 평판 2개와 네 방향에 접합될 삼각형의 석영 평판 8개를 석영 관(10)에 용융 접합하여 제조한 예이다.2 and 3 are a front view and a plan view of a first embodiment of the present invention, one piece of rectangular quartz plate having a length corresponding to the hemispherical circumference of the quartz tube 10 and the quartz tube, and the rectangular quartz to be joined to the left and right sides thereof; Two flat plates and eight triangular quartz flat plates to be joined in four directions are melt-bonded to the quartz tube 10.

[실시 예 2]Example 2

[도 6]의 (30)은 본 발명의 실시 예 2의 평면도로서 석영 관(10)과 석영 관의 반구 원둘레에 해당하는 길이를 갖는 직 사각형의 석영 평판 조각 1개와 그 좌 우에 접합될 사각형의 석영 평판 2개와 네 방향에 접합될 오각형의 석영 평판 4개와 작은 삼각형의 석영 평판 8개로 구성된 석영 평판 조각들을 석영 관(10)에 용융 접합하여 제조한 예이다.FIG. 6 is a plan view of Embodiment 2 of the present invention, in which a single rectangular quartz plate piece having a length corresponding to the hemispherical circumference of the quartz tube 10 and the quartz tube and a rectangle to be joined to the left and right sides thereof The quartz plate pieces composed of two quartz plates, four pentagonal quartz plates to be joined in four directions, and eight small triangular quartz plates are melt-bonded to the quartz tube 10.

[실시 예 3]Example 3

[도 6]의 (31)은 본 발명의 실시 예 3의 평면도로서 석영 관(10)과 16개의 이등변 삼각형의 석영 평판으로 석영 관(I0)에 용융 접합하여 제조한 예이다.Fig. 6 (31) is a plan view of Embodiment 3 of the present invention, in which the quartz tube 10 and 16 isosceles triangle quartz plates are melt-bonded to the quartz tube I0.

본 발명의 방법으로 석영 진공 챔버를 제조하면 다각형의 석영 평판을 표준화하여 경제적으로 제작할 수 있고, 제조시 대한민국 특허 제0263038의 크라운을 형성할 때의 파손에 의한 문제점을 해결할 수 있으며, 석영 관과 동일한 두께의 반구를 쉽게 형성할 수 있으며, 용융 접합 부위의 분산으로 반구 중앙에 용융 접합 부위를 집중시킬 때 발생하는 고온, 고압에 따른 문제점을 분산시키며(실시 예 3은 제외), 동일한 품질의 석영 진공 챔버를 제조할 수 있는 효과를 제공한다.Manufacturing the quartz vacuum chamber by the method of the present invention can be economically manufactured by standardizing the polygonal quartz plate, and can solve the problem caused by breakage when forming the crown of the Republic of Korea Patent No. 0263038, the same as the quartz tube It is easy to form a hemisphere with a thickness, dispersing the problems caused by the high temperature and high pressure generated when the melt junction site is concentrated in the center of the hemisphere by dispersion of the melt joint site (except Example 3), and vacuum quartz of the same quality It provides the effect of manufacturing the chamber.

Claims (1)

석영 진공 챔버(도1)를 제조하는 방법에 있어서, 요구되는 석영 관을(10) 절단하고, 삼각형, 사각형, 오각형 등의 다각형의 표준화 할 수 있는 크기로 절단한 석영 관(10)과 동일한 두께의 석영 평판과 보조 금형을 이용한 용융 접합 방법으로 석영 진공 챔버의 반구를 형성하는 단계를 포함하는 것을 특징으로 하는 석영 진공 챔버 제조 방법In the method of manufacturing the quartz vacuum chamber (FIG. 1), the required quartz tube 10 is cut and the same thickness as the quartz tube 10 cut into a standardizable size of polygons such as triangles, squares, pentagons, and the like. Quartz vacuum chamber manufacturing method comprising the step of forming a hemisphere of the quartz vacuum chamber by a melt bonding method using a quartz plate and an auxiliary mold of
KR1020000079966A 2000-12-21 2000-12-21 A process of a vacuum chamber in a vacuum evaporator KR20020050683A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101011022B1 (en) * 2008-05-10 2011-01-27 김종연 It comes ten bathtubs
KR101013728B1 (en) * 2008-12-12 2011-02-14 대한주택공사 An environmental -friendly bathtub system recycling water resource
CN113894627A (en) * 2021-10-15 2022-01-07 湖州东科电子石英股份有限公司 Machining method of conical protection cylinder

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR890021823U (en) * 1988-04-01 1989-11-03 삼성전자 주식회사 Quartz tube for semiconductor manufacturing process
KR19980076733A (en) * 1997-04-14 1998-11-16 윤종용 Plasma processing equipment
KR19990051404A (en) * 1997-12-19 1999-07-05 윤종용 Process Chamber of Semiconductor Manufacturing Equipment
KR100263038B1 (en) * 1998-04-16 2000-09-01 김현우 Manufacturing method of vacuum chamber

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR890021823U (en) * 1988-04-01 1989-11-03 삼성전자 주식회사 Quartz tube for semiconductor manufacturing process
KR19980076733A (en) * 1997-04-14 1998-11-16 윤종용 Plasma processing equipment
KR19990051404A (en) * 1997-12-19 1999-07-05 윤종용 Process Chamber of Semiconductor Manufacturing Equipment
KR100263038B1 (en) * 1998-04-16 2000-09-01 김현우 Manufacturing method of vacuum chamber

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101011022B1 (en) * 2008-05-10 2011-01-27 김종연 It comes ten bathtubs
KR101013728B1 (en) * 2008-12-12 2011-02-14 대한주택공사 An environmental -friendly bathtub system recycling water resource
CN113894627A (en) * 2021-10-15 2022-01-07 湖州东科电子石英股份有限公司 Machining method of conical protection cylinder
CN113894627B (en) * 2021-10-15 2023-09-01 湖州东科电子石英股份有限公司 Processing method of conical protection cylinder

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