KR20020048706A - Image sensor having OCM layer over microlens and method for fabricating the same - Google Patents
Image sensor having OCM layer over microlens and method for fabricating the same Download PDFInfo
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Abstract
Description
본 발명은 이미지 센서 제조 분야에 관한 것으로, 특히 이미지 센서에 있어서 가장 중요한 특징인 광감도(light sensitivity)를 크게 향상시킬 수 있는 이미지 센서 및 그 제조 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the field of image sensor manufacturing, and more particularly, to an image sensor and a method of manufacturing the same, which can greatly improve light sensitivity, which is the most important feature of an image sensor.
이미지 센서(image sensor)는 1차원 또는 2차원 이상의 광학 정보를 전기신호로 변환하는 장치이다. 이미지 센서의 종류는 크게 나누어 촬상관과 고체 촬상 소자로 분류된다. 촬상관은 텔레비전을 중심으로 하여 화상처리기술을 구사한 계측, 제어, 인식 등에서 널리 상용되며 응용 기술이 발전되었다. 시판되는 고체 이미지 센서는 MOS(metal-oxide-semiconductor)형과 CCD(charge coupled device)형의 2종류가 있다.An image sensor is an apparatus that converts optical information of one or two dimensions or more into an electrical signal. The types of image sensors are broadly classified into imaging tubes and solid-state imaging devices. Imaging tubes are widely used in measurement, control, and recognition using image processing technology centered on televisions, and applied technologies have been developed. There are two types of commercially available solid-state image sensors, a metal-oxide-semiconductor (MOS) type and a charge coupled device (CCD) type.
CMOS 이미지 센서는 CMOS 제조 기술을 이용하여 광학적 이미지를 전기적신호로 변환시키는 소자로서, 화소수 만큼 MOS트랜지스터를 만들고 이것을 이용하여 차례차례 출력을 검출하는 스위칭 방식을 채용하고 있다. CMOS 이미지 센서는, 종래 이미지센서로 널리 사용되고 있는 CCD 이미지센서에 비하여 구동 방식이 간편하고 다양한 스캐닝 방식의 구현이 가능하며, 신호처리 회로를 단일칩에 집적할 수 있어 제품의 소형화가 가능할 뿐만 아니라, 호환성의 CMOS 기술을 사용하므로 제조 단가를 낮출 수 있고, 전력 소모 또한 크게 낮다는 장점을 지니고 있다.CMOS image sensor is a device that converts an optical image into an electrical signal by using CMOS fabrication technology, and adopts a switching method in which MOS transistors are made by the number of pixels and the outputs are sequentially detected using the same. The CMOS image sensor is simpler to drive than the CCD image sensor, which is widely used as a conventional image sensor, and can realize various scanning methods, and can integrate a signal processing circuit into a single chip, thereby miniaturizing the product. The use of compatible CMOS technology reduces manufacturing costs and significantly lowers power consumption.
도 1은 4개의 트랜지스터와 2개의 캐패시턴스 구조로 이루어지는 CMOS 이미지센서의 단위화소를 보이는 회로도로서, 광감지 수단인 포토다이오드(PD)와 4개의 NMOS트랜지스터로 구성되는 CMOS 이미지센서의 단위화소를 보이고 있다. 4개의 NMOS트랜지스터 중 트랜스퍼 트랜지스터(Tx)는 포토다이오드(PD)에서 생성된 광전하를 플로팅 확산영역(FD)으로 전송하는 신호를 전달하고, 리셋 트랜지스터(Rx)는 플로팅 확산영역(FD)을 공급전압(VDD) 레벨로 리셋시키는 신호를 전달하고, 드라이브 트랜지스터(Dx)는 소스팔로워(Source Follower)로서 역할하며, 셀렉트 트랜지스터(Sx)는 픽셀 데이터 인에이블(pixel data enable) 신호를 인가받아 픽셀 데이터 신호를 출력으로 전송하는 역할을 한다.1 is a circuit diagram showing a unit pixel of a CMOS image sensor composed of four transistors and two capacitance structures, and a unit pixel of a CMOS image sensor composed of a photodiode (PD) as an optical sensing means and four NMOS transistors. . Of the four NMOS transistors, the transfer transistor Tx transmits a signal for transferring the photocharge generated in the photodiode PD to the floating diffusion region FD, and the reset transistor Rx supplies the floating diffusion region FD. The drive transistor Dx serves as a source follower, and the select transistor Sx receives a pixel data enable signal and receives a pixel to reset the voltage to the voltage V DD level. It is responsible for transmitting the data signal to the output.
이와 같이 구성된 이미지센서 단위화소에 대한 동작은 다음과 같이 이루어진다. 처음에는 리셋 트랜지스터(Rx), 트랜스퍼 트랜지스터(Tx) 및 셀렉트 트랜지스터(Sx)를 온(on)시켜 단위화소를 리셋시킨다. 이때 포토다이오드(PD)는 공핍되기 시작하여 전하축적(carrier changing)이 발생하고, 플로팅 확산영역은 공급전압( VDD)까지 전하축전된다. 그리고 트랜스퍼 트랜지스터(Tx)를 오프시키고 셀렉트 트랜지스터(Sx)를 온시킨 다음 리셋트랜지스터(Rx)를 오프시킨다. 이와 같은 동작 상태에서 단위화소 출력단(SO)으로부터 출력전압 V1을 읽어 버퍼에 저장시키고 난 후, 트랜스퍼 트랜지스터(Tx)를 온시켜 빛의 세기에 따라 변화된 캐패시턴스 Cp의 캐리어들을 캐패시턴스 Cf로 이동시킨 다음, 다시 출력단(Out)에서 출력전압 V2를 읽어들여 V1 - V2에 대한 아날로그 데이터를 디지털 데이터로 변경시키므로 단위화소에 대한 한 동작주기가 완료된다.Operation of the image sensor unit pixel configured as described above is performed as follows. Initially, the unit pixel is reset by turning on the reset transistor Rx, the transfer transistor Tx, and the select transistor Sx. At this time, the photodiode PD starts to deplete, and carrier accumulation occurs, and the floating diffusion region is charged and stored up to the supply voltage VDD. The transfer transistor Tx is turned off, the select transistor Sx is turned on, and the reset transistor Rx is turned off. In this operation state, after reading the output voltage V1 from the unit pixel output terminal SO and storing it in the buffer, the transfer transistor Tx is turned on to move the carriers of the capacitance Cp changed according to the light intensity to the capacitance Cf. The output voltage (V2) is read from the output terminal (Out) again and the analog data for V1-V2 is converted into digital data, so one operation cycle for the unit pixel is completed.
이하, 도 2a 내지 도 2c를 참조하여 종래 기술에 따른 이미지 센서 제조 방법을 설명한다.Hereinafter, a method of manufacturing an image sensor according to the prior art will be described with reference to FIGS. 2A to 2C.
먼저 도 2a에 도시한 바와 같이, 소자분리막(21), 포토다이오드(도시하지 않음), 트랜지스터 및 금속배선 등을 포함한 소정의 하부구조(22) 형성이 완료된 반도체 기판(20)을 마련하고 상기 하부구조(23) 상에 평탄화층(23)을 형성한다.First, as shown in FIG. 2A, a semiconductor substrate 20 having a predetermined substructure 22 including a device isolation film 21, a photodiode (not shown), a transistor, and a metal wiring is completed. The planarization layer 23 is formed on the structure 23.
다음으로 도 2b에 보이는 바와 같이, 블루 칼라필터(B), 레드 칼라필터(R) 및 그린 칼라필터(G) 각각을 칼라필터 어레이 마스크(color filter array mask)를 이용하여 차례로 형성한다.Next, as shown in FIG. 2B, each of the blue color filter B, the red color filter R, and the green color filter G is sequentially formed using a color filter array mask.
이어서 도 2c에 도시한 바와 같이, 블루 칼라필터(B), 레드 칼라필터(R) 및 그린 칼라필터(G) 형성이 완료된 전체 구조 상에 OCM(over coating material, 23)을 도포하고 각각의 칼라필터(R, G, B)와 중첩되는 마이크로 렌즈(24)를 감광막으로 형성한다.Subsequently, as shown in FIG. 2C, an OCM (over coating material) 23 is coated on the entire structure where the blue color filter B, the red color filter R, and the green color filter G are completed, and each color is applied. The microlenses 24 overlapping the filters R, G, and B are formed of a photosensitive film.
전술한 바와 같이 과정에 따라 형성된 종래 이미지 센서는 표면이 견고하지 못한 감광막으로 이루어지는 마이크로 렌즈가 최상부에 위치하여, 제조 과정시 결함(defect) 제거를 위한 세정 공정이 용이하지 못하여 제조수율이 감소하는 문제점이 있다.As described above, the conventional image sensor formed according to the process has a microlens composed of a photoresist film having a hard surface, and thus the manufacturing yield is reduced because the cleaning process for removing defects during the manufacturing process is not easy. There is this.
상기와 같은 문제점을 해결하기 위한 본 발명은, 최상부에 형성되는 마이크로 렌즈를 보호할 수 있는 이미지 센서 및 그 제조 방법을 제공하는데 목적이 있다.The present invention for solving the above problems is an object of the present invention to provide an image sensor and a method of manufacturing the same that can protect the micro lens formed on the top.
도 1은 종래 기술에 따른 CMOS 이미지 센서의 단위화소 구조를 개략적으로 보이는 회로도,1 is a circuit diagram schematically showing a unit pixel structure of a conventional CMOS image sensor;
도 2a 내지 도 2c는 종래 기술에 따른 이미지 센서 제조 공정 단면도,2A to 2C are cross-sectional views of an image sensor manufacturing process according to the prior art;
도 3a 내지 도 3d는 본 발명의 실시예에 따른 이미지 센서 제조 공정 단면도.3A to 3D are cross-sectional views of an image sensor manufacturing process according to an embodiment of the present invention.
*도면의 주요부분에 대한 도면 부호의 설명** Description of reference numerals for the main parts of the drawings *
35: 마이크로 렌즈 36: OCM층35: microlens 36: OCM layer
37: 저온 산화막37: low temperature oxide film
상기와 같은 목적을 달성하기 위한 본 발명은, 수광수단; 상기 수광수단과중첩되는 볼록 형상의 감광막으로 이루어지는 집광수단; 상기 집광수단 표면 상부를 덮는 평탄화층; 및 상기 평탄화층 상에 형성된 산화막을 포함하는 이미지 센서를 제공한다.The present invention for achieving the above object, the light receiving means; A light collecting means comprising a convex photosensitive film overlapping the light receiving means; A planarization layer covering an upper surface of the light collecting means; And an oxide film formed on the planarization layer.
또한 상기 목적을 달성하기 위한 본 발명은, 수광수단; 상기 수광수단과 중첩되는 칼라필터; 상기 칼라필터 상부를 덮는 제1 평탄화층; 상기 수광수단과 중첩되는 볼록 형상의 감광막으로 이루어지는 집광수단; 및 상기 집광수단 표면 상부를 덮는 제2 평탄화층을 포함하는 이미지 센서를 제공한다.In addition, the present invention for achieving the above object, the light receiving means; A color filter overlapping the light receiving means; A first planarization layer covering an upper portion of the color filter; A light collecting means comprising a convex photosensitive film overlapping the light receiving means; And a second planarization layer covering an upper surface of the light collecting means.
또한 상기 목적을 달성하기 위한 본 발명은, 수광수단을 포함하는 소정의 하부구조 형성이 완료된 반도체 기판을 마련하는 단계; 상기 수광수단과 중첩되는 칼라필터를 형성하는 단계; 상기 칼라필터 상부에 제1 평탄화층을 형성하는 단계; 상기 제1 평탄화층 상에 상기 칼라필터와 중첩되며 볼록 형상을 갖는 감광막으로 이루어지는 집광수단을 형성하는 단계; 상기 집광수단 상에 제2 평탄화층을 형성하는 단계; 및 상기 평탄화층 상에 산화막을 형성하는 단계를 포함하는 이미지 센서 제조 방법을 제공한다.In addition, the present invention for achieving the above object, the step of providing a semiconductor substrate is completed a predetermined substructure including a light receiving means; Forming a color filter overlapping the light receiving means; Forming a first planarization layer on the color filter; Forming a light collecting means on the first planarization layer, the light collecting means including a photosensitive film overlapping the color filter and having a convex shape; Forming a second planarization layer on the light collecting means; And forming an oxide film on the planarization layer.
본 발명은 볼록 형상을 갖는 마이크로 렌즈 상에 평탄한 OCM층 및 저온 산화막을 증착하여 이미지 센서의 페시베이션층(passivation layer)을 형성함으로써, 제조시 발생하는 결함들을 스크러버(scrubber) 등으로 용이하게 제거할 수 있고, 조립 과정에서도 결함을 용이하게 제거할 수 있는 이미지 센서 및 그 제조 방법을 제공한다.The present invention forms a passivation layer of an image sensor by depositing a flat OCM layer and a low temperature oxide film on a convex microlens, so that defects generated during manufacturing can be easily removed with a scrubber or the like. The present invention provides an image sensor and a method of manufacturing the same that can easily remove defects even in an assembly process.
마이크로 렌즈의 집광효과를 극대화시키기 위해서는 굴절율을 고려해야하는데, 공기의 굴절율이 1, 산화막의 굴절율이 1.45, 마이크로 렌즈의 굴절율이 1.4 내지 1.7, 마이크로 렌즈 하부의 OCM 굴절율이 1.4 내지 1.7인 점을 감안하여 마이크로 렌즈, OCM, 산화막류에 비해 작은 굴절율 1.2 내지 1.4의 굴절율을 갖는 OCM으로 마이크로 렌즈 상부를 덮어 평탄화시킴으로써, 그 형성에 따른 입사광 경로의 변화를 감소시킨다.In order to maximize the condensing effect of the microlenses, the refractive index should be considered, considering that the refractive index of air is 1, the refractive index of oxide film is 1.45, the refractive index of the microlenses is 1.4 to 1.7, and the OCM refractive index of the lower portion of the microlenses is 1.4 to 1.7. By covering and planarizing the upper portion of the microlens with an OCM having a refractive index of 1.2 to 1.4, which is smaller than that of the microlenses, OCM and oxide films, the change in the incident light path due to its formation is reduced.
이하, 도 3a 내지 도 3d를 참조하여 본 발명의 실시예에 따른 이미지 센서 제조 방법을 설명한다.Hereinafter, a method of manufacturing an image sensor according to an exemplary embodiment of the present invention will be described with reference to FIGS. 3A to 3D.
먼저 도 3a에 도시한 바와 같이, 소자분리막(31), 포토다이오드(도시하지 않음), 트랜지스터 및 금속배선 등을 포함한 소정의 하부구조(32) 형성이 완료된 반도체 기판(30)을 마련하고 상기 하부구조(32) 상에 평탄화층(33)을 형성한다.First, as shown in FIG. 3A, a semiconductor substrate 30 having a predetermined substructure 32 including a device isolation layer 31, a photodiode (not shown), a transistor, and a metal wiring is completed. The planarization layer 33 is formed on the structure 32.
다음으로 도 3b에 보이는 바와 같이, 블루 칼라필터(B), 레드 칼라필터(R) 및 그린 칼라필터(G) 각각을 칼라필터 어레이 마스크(color filter array mask)를 이용하여 차례로 형성한다.Next, as shown in FIG. 3B, each of the blue color filter B, the red color filter R, and the green color filter G is sequentially formed using a color filter array mask.
이어서 도 3c에 도시한 바와 같이, 블루 칼라필터(B), 레드 칼라필터(R) 및 그린 칼라필터(G) 형성이 완료된 전체 구조 상에 제1 OCM(34)을 도포하고 각각의 칼라필터(R, G, B)와 중첩되는 마이크로 렌즈(35)를 감광막으로 형성한다.Subsequently, as shown in FIG. 3C, the first OCM 34 is coated on the entire structure in which the blue color filter B, the red color filter R, and the green color filter G have been formed, and each color filter ( The microlens 35 overlapping the R, G, and B is formed of a photosensitive film.
다음으로 도 3d에 보이는 바와 같이, 마이크로 렌즈(35) 상에 굴절율이 1.2 내지 1.4인 제2 OCM(36)을 도포하여 평탄화시키고, 상기 제2 OCM(36) 상에 저온 산화막(37)을 형성한다. 본 발명의 실시예에서는 상기 저온 산화막(37)은 140 ℃ 내지 220 ℃에서 형성한다.Next, as shown in FIG. 3D, a second OCM 36 having a refractive index of 1.2 to 1.4 is applied and planarized on the microlens 35, and a low temperature oxide film 37 is formed on the second OCM 36. do. In the embodiment of the present invention, the low temperature oxide film 37 is formed at 140 ° C to 220 ° C.
이상에서 설명한 본 발명은 전술한 실시예 및 첨부된 도면에 의해 한정되는 것이 아니고, 본 발명의 기술적 사상을 벗어나지 않는 범위 내에서 여러 가지 치환, 변형 및 변경이 가능하다는 것이 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 있어 명백할 것이다.The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and various substitutions, modifications, and changes are possible in the art without departing from the technical spirit of the present invention. It will be apparent to those of ordinary knowledge.
상기와 같이 이루어지는 본 발명은 견고하지 않은 감광막으로 이루어져 요철 형태를 갖는 마이크로 렌즈 상부에 평탄화층을 형성함으로써 웨이퍼 단위로 진행되는 이미지 센서 제조 과정에서 결함을 제거하기 위한 세정 공정을 용이하게 실시할 수 있어 그에 따른 제조 수율 향상을 기대할 수 있다.The present invention as described above is made of a non-rugged photosensitive film to form a flattening layer on the top of the micro lens having an uneven shape to facilitate the cleaning process for removing defects in the manufacturing process of the image sensor proceeds in wafer units As a result, an improvement in manufacturing yield can be expected.
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