KR20020048707A - Image sensor having color filter capable of collecting light and method for fabricating the same - Google Patents
Image sensor having color filter capable of collecting light and method for fabricating the same Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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Abstract
Description
본 발명은 이미지 센서 제조 분야에 관한 것으로, 특히 광집속 기능을 갖는 칼라필터를 구비하는 이미지 센서 및 그 제조 방법에 관한 것이다.TECHNICAL FIELD The present invention relates to the field of image sensor manufacturing, and more particularly, to an image sensor having a color filter having a light focusing function and a method of manufacturing the same.
이미지 센서(image sensor)는 1차원 또는 2차원 이상의 광학 정보를 전기신호로 변환하는 장치이다. 이미지 센서의 종류는 크게 나누어 촬상관과 고체 촬상 소자로 분류된다. 촬상관은 텔레비전을 중심으로 하여 화상처리기술을 구사한 계측, 제어, 인식 등에서 널리 상용되며 응용 기술이 발전되었다. 시판되는 고체 이미지 센서는 MOS(metal-oxide-semiconductor)형과 CCD(charge coupled device)형의 2종류가 있다.An image sensor is an apparatus that converts optical information of one or two dimensions or more into an electrical signal. The types of image sensors are broadly classified into imaging tubes and solid-state imaging devices. Imaging tubes are widely used in measurement, control, and recognition using image processing technology centered on televisions, and applied technologies have been developed. There are two types of commercially available solid-state image sensors, a metal-oxide-semiconductor (MOS) type and a charge coupled device (CCD) type.
CMOS 이미지 센서는 CMOS 제조 기술을 이용하여 광학적 이미지를 전기적신호로 변환시키는 소자로서, 화소수 만큼 MOS트랜지스터를 만들고 이것을 이용하여 차례차례 출력을 검출하는 스위칭 방식을 채용하고 있다. CMOS 이미지 센서는, 종래 이미지센서로 널리 사용되고 있는 CCD 이미지센서에 비하여 구동 방식이 간편하고 다양한 스캐닝 방식의 구현이 가능하며, 신호처리 회로를 단일칩에 집적할 수 있어 제품의 소형화가 가능할 뿐만 아니라, 호환성의 CMOS 기술을 사용하므로 제조 단가를 낮출 수 있고, 전력 소모 또한 크게 낮다는 장점을 지니고 있다.CMOS image sensor is a device that converts an optical image into an electrical signal by using CMOS fabrication technology, and adopts a switching method in which MOS transistors are made by the number of pixels and the outputs are sequentially detected using the same. The CMOS image sensor is simpler to drive than the CCD image sensor, which is widely used as a conventional image sensor, and can realize various scanning methods, and can integrate a signal processing circuit into a single chip, thereby miniaturizing the product. The use of compatible CMOS technology reduces manufacturing costs and significantly lowers power consumption.
도 1은 4개의 트랜지스터와 2개의 캐패시턴스 구조로 이루어지는 CMOS 이미지센서의 단위화소를 보이는 회로도로서, 광감지 수단인 포토다이오드(PD)와 4개의 NMOS트랜지스터로 구성되는 CMOS 이미지센서의 단위화소를 보이고 있다. 4개의 NMOS트랜지스터 중 트랜스퍼 트랜지스터(Tx)는 포토다이오드(PD)에서 생성된 광전하를 플로팅 확산영역(FD)으로 전송하는 신호를 전달하고, 리셋 트랜지스터(Rx)는 플로팅 확산영역(FD)을 공급전압(VDD) 레벨로 리셋시키는 신호를 전달하고, 드라이브 트랜지스터(Dx)는 소스팔로워(Source Follower)로서 역할하며, 셀렉트 트랜지스터(Sx)는 픽셀 데이터 인에이블(pixel data enable) 신호를 인가받아 픽셀 데이터 신호를 출력으로 전송하는 역할을 한다.1 is a circuit diagram showing a unit pixel of a CMOS image sensor composed of four transistors and two capacitance structures, and a unit pixel of a CMOS image sensor composed of a photodiode (PD) as an optical sensing means and four NMOS transistors. . Of the four NMOS transistors, the transfer transistor Tx transmits a signal for transferring the photocharge generated in the photodiode PD to the floating diffusion region FD, and the reset transistor Rx supplies the floating diffusion region FD. The drive transistor Dx serves as a source follower, and the select transistor Sx receives a pixel data enable signal and receives a pixel to reset the voltage to the voltage V DD level. It is responsible for transmitting the data signal to the output.
이와 같이 구성된 이미지센서 단위화소에 대한 동작은 다음과 같이 이루어진다. 처음에는 리셋 트랜지스터(Rx), 트랜스퍼 트랜지스터(Tx) 및 셀렉트 트랜지스터(Sx)를 온(on)시켜 단위화소를 리셋시킨다. 이때 포토다이오드(PD)는 공핍되기 시작하여 전하축적(carrier changing)이 발생하고, 플로팅 확산영역은 공급전압( VDD)까지 전하축전된다. 그리고 트랜스퍼 트랜지스터(Tx)를 오프시키고 셀렉트 트랜지스터(Sx)를 온시킨 다음 리셋트랜지스터(Rx)를 오프시킨다. 이와 같은 동작 상태에서 단위화소 출력단(SO)으로부터 출력전압 V1을 읽어 버퍼에 저장시키고 난 후, 트랜스퍼 트랜지스터(Tx)를 온시켜 빛의 세기에 따라 변화된 캐패시턴스 Cp의 캐리어들을 캐패시턴스 Cf로 이동시킨 다음, 다시 출력단(Out)에서 출력전압 V2를 읽어들여 V1 - V2에 대한 아날로그 데이터를 디지털 데이터로 변경시키므로 단위화소에 대한 한 동작주기가 완료된다.Operation of the image sensor unit pixel configured as described above is performed as follows. Initially, the unit pixel is reset by turning on the reset transistor Rx, the transfer transistor Tx, and the select transistor Sx. At this time, the photodiode PD starts to deplete, and carrier accumulation occurs, and the floating diffusion region is charged and stored up to the supply voltage VDD. The transfer transistor Tx is turned off, the select transistor Sx is turned on, and the reset transistor Rx is turned off. In this operation state, after reading the output voltage V1 from the unit pixel output terminal SO and storing it in the buffer, the transfer transistor Tx is turned on to move the carriers of the capacitance Cp changed according to the light intensity to the capacitance Cf. The output voltage (V2) is read from the output terminal (Out) again and the analog data for V1-V2 is converted into digital data, so one operation cycle for the unit pixel is completed.
도 2는 종래 이미지 센서를 구조를 개략적으로 보이는 단면도로서, p형 반도체 기판(20) 상에 형성된 p형 에피택셜층(epitaxial layer, 21), 상기 에피택셜층(21) 내에 형성된 소자분리막(22)에 의해 분리되며 그 각각이 에피택셜층(21) 내에 형성된 n형 불순물 영역과 p형 불순물 영역으로 이루어지는 포토다이오드(도시하지 않음), 트랜지스터(도시하지 않음) 등을 포함한 하부구조(23) 상부에 형성된 칼라필터(R, G, B), 칼라필터를 덮는 OCM(over coating material) 평탄화층(26), OCM 평탄화층(26) 상에 형성되어 칼라필터(R, G, B)와 중첩되는 마이크로 렌즈(microlens, 25)를 도시하고 있다.2 is a cross-sectional view schematically illustrating a structure of a conventional image sensor, wherein a p-type epitaxial layer 21 formed on a p-type semiconductor substrate 20 and an isolation layer 22 formed in the epitaxial layer 21 are shown. And an upper portion of the lower structure 23 including photodiodes (not shown), transistors (not shown), and the like, each of which is formed by an n-type impurity region and a p-type impurity region formed in the epitaxial layer 21. Formed on the color filters R, G, and B, the over coating material (OCM) flattening layer 26 covering the color filter, and the OCM flattening layer 26 to overlap the color filters R, G, and B. The microlens 25 is shown.
마이크로 렌즈는 포토다이오드 영역 이외에서 입사되는 빛도 포토다이오드 영역내로 집광시켜 포토다이오드의 감도(sensitivity)를 증가시키기는 역할을 하는 것으로서, 종래 이미지 센서에 범용으로 사용되고 있다. 도 2에 보이는 바와 같이 종래 마이크로 렌즈(25)는 각 픽셀에 대해 볼록한 형태로 형성되는데, 이러한 마이크로 구조는 제조원가, 제조공기를 증가시킬 뿐만 아니라 광투과율이 불량한 OCM 평탄화층(26)을 마이크로 렌즈 형성 전에 형성하여야만 하기 때문에 이미지 센서의 광감도가 저하되는 문제점이 있다.The micro lens serves to increase the sensitivity of the photodiode by condensing light incident from the photodiode region into the photodiode region, and is conventionally used in a conventional image sensor. As shown in FIG. 2, the conventional microlens 25 is formed in a convex shape for each pixel. The microstructure forms the OCM planarization layer 26, which not only increases manufacturing cost and manufacturing air but also has poor light transmittance. Since it must be formed before, there is a problem that the light sensitivity of the image sensor is lowered.
상기와 같은 문제점을 해결하기 위한 본 발명은, 마이크로 렌즈 형성에 따른 제조 비용 절감 및 광감도 특성을 향상시킬 수 있는 이미지 센서 및 그 제조 방법을 제공하는데 목적이 있다.The present invention for solving the above problems, an object of the present invention is to provide a manufacturing method and an image sensor that can reduce the manufacturing cost and improve the light sensitivity characteristics according to the micro-lens formation.
도 1은 종래 기술에 따른 CMOS 이미지 센서의 단위화소 구조를 개략적으로 보이는 회로도,1 is a circuit diagram schematically showing a unit pixel structure of a conventional CMOS image sensor;
도 2는 종래 이미지 센서를 구조를 개략적으로 보이는 단면도,2 is a cross-sectional view schematically showing a structure of a conventional image sensor;
도 3a 내지 도 3e는 본 발명의 실시예에 따른 이미지 센서 공정 단면도.3A-3E are cross-sectional views of an image sensor process in accordance with an embodiment of the present invention.
*도면의 주요부분에 대한 도면 부호의 설명** Description of reference numerals for the main parts of the drawings *
33, 34, 35, 33A, 34A, 35A: 칼라필터33, 34, 35, 33A, 34A, 35A: color filter
상기와 같은 목적을 달성하기 위한 본 발명은, 수광수단; 및 상기 수광수단과 상부에 형성되는 감광막으로 이루어지며 반구형상을 가져 집광 기능을 구비하는 칼라필터를 포함하는 이미지 센서를 제공한다.The present invention for achieving the above object, the light receiving means; And a color filter formed of the light-receiving means and a photosensitive film formed thereon and having a hemispherical shape and having a light condensing function.
또한 상기 목적을 달성하기 위한 본 발명은, 수광수단을 포함하는 소정의 하부구조 형성이 완료된 반도체 기판을 마련하는 단계; 상기 수광수단 상부에 감광막으로 이루어지는 적어도 1색의 칼라필터 패턴을 형성하는 단계; 및 상기 칼라필터 패턴을 열처리하여 집광기능을 갖는 반구형의 칼라필터 패턴을 형성하는 단계를 포함하는 이미지 센서 제조 방법을 제공한다.In addition, the present invention for achieving the above object, the step of providing a semiconductor substrate is completed a predetermined substructure including a light receiving means; Forming a color filter pattern of at least one color of a photosensitive film on the light receiving means; And heat treating the color filter pattern to form a hemispherical color filter pattern having a light condensing function.
본 발명은 마이크로 렌즈의 역할을 수행하는 칼라필터를 형성하는데 그 특징이 있다. 칼라필터 형성 후 OCM 평탄화층을 형성하고 마이크로 렌즈를 별도로 형성하는 종래 기술과 달리 본 발명은 칼라필터를 이루는 감광막 패턴을 형성하고 열처리를 하여 반구형 칼라필터를 형성하는데 그 특징이 있다.The present invention is characterized by forming a color filter which performs the role of a micro lens. Unlike the prior art in which the OCM planarization layer is formed after the color filter is formed and the microlenses are separately formed, the present invention is characterized by forming a hemispherical color filter by forming a photoresist pattern constituting the color filter and performing heat treatment.
이하, 첨부된 도면 도 3a 내지 도 3e를 참조하여 본 발명의 실시예에 따른 이미지 센서 제조 방법을 설명한다.Hereinafter, an image sensor manufacturing method according to an embodiment of the present invention will be described with reference to the accompanying drawings, FIGS. 3A to 3E.
먼저 도 3a에 도시한 바와 같이, 소자분리막(31), 포토다이오드(도시하지 않음), 트랜지스터 및 금속배선 등을 포함한 소정의 하부구조(32) 형성이 완료된 반도체 기판(30)을 마련한다. 도 3a에서 미설명 도면부호 'P'는 포토다이오드 영역을 나타낸다.First, as shown in FIG. 3A, a semiconductor substrate 30 having a predetermined substructure 32 including a device isolation layer 31, a photodiode (not shown), a transistor, a metal wiring, and the like is completed. In FIG. 3A, reference numeral 'P' denotes a photodiode region.
다음으로 도 3b에 보이는 바와 같이, 블루 칼라필터(33)를 형성하고, 이어서 도 3c에 도시한 바와 같이, 레드 칼라필터(34)를 형성한 다음, 도 3d에 보이는 바와 같이 그린 칼라필터(35)를 형성한다. 상기 블루 칼라필터(33), 레드 칼라필터(34) 및 그린 칼라필터(35) 각각은 감광막으로 형성한다.Next, as shown in FIG. 3B, a blue color filter 33 is formed, and as shown in FIG. 3C, a red color filter 34 is formed, and then the green color filter 35 is shown in FIG. 3D. ). Each of the blue color filter 33, the red color filter 34, and the green color filter 35 is formed of a photosensitive film.
이어서 도 3e에 보이는 바와 같이, 열처리를 실시하여 각각 반구형의 블루 칼라필터(33A), 레드 칼라필터(34A) 및 그린 칼라필터(35A)를 형성하여, 마이크로렌즈 역할을 겸비하는 칼라필터 형성 공정을 완료한다.Subsequently, as shown in FIG. 3E, heat treatment is performed to form hemispherical blue color filters 33A, red color filters 34A, and green color filters 35A, respectively, to form a color filter having a role of a microlens. To complete.
이상에서 설명한 본 발명은 전술한 실시예 및 첨부된 도면에 의해 한정되는 것이 아니고, 본 발명의 기술적 사상을 벗어나지 않는 범위 내에서 여러 가지 치환, 변형 및 변경이 가능하다는 것이 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 있어 명백할 것이다.The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and various substitutions, modifications, and changes are possible in the art without departing from the technical spirit of the present invention. It will be apparent to those of ordinary knowledge.
상기와 같이 이루어지는 본 발명은 집광기능을 갖는 칼라필터를 형성함으로써 광투과율이 불량하고 재료가 고가인 OCM 평탄화층 형성 과정을 생략할 수 있어 이미지 센서의 광감도를 향상시킬 수 있고 제조원가를 절감시킬 수 있으며, 제조 공기를 단축시킬 수 있다.The present invention made as described above can omit the OCM planarization layer formation process of poor light transmittance and expensive material by forming a color filter having a condensing function can improve the light sensitivity of the image sensor and reduce the manufacturing cost The manufacturing air can be shortened.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100606936B1 (en) * | 2004-10-18 | 2006-08-02 | 동부일렉트로닉스 주식회사 | CMOS Image Sensor and Method for fabricating of the same |
| KR100649022B1 (en) * | 2004-11-09 | 2006-11-28 | 동부일렉트로닉스 주식회사 | method for manufacturing of cmos image sensor |
| KR100788351B1 (en) * | 2005-12-29 | 2008-01-02 | 동부일렉트로닉스 주식회사 | CMOS image sensor and method for fabricating of the same |
| US7416914B2 (en) | 2004-12-14 | 2008-08-26 | Dongbu Electronics Co., Ltd. | Method of fabricating CMOS image sensor |
-
2000
- 2000-12-18 KR KR1020000077936A patent/KR20020048707A/en not_active Application Discontinuation
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100606936B1 (en) * | 2004-10-18 | 2006-08-02 | 동부일렉트로닉스 주식회사 | CMOS Image Sensor and Method for fabricating of the same |
| KR100649022B1 (en) * | 2004-11-09 | 2006-11-28 | 동부일렉트로닉스 주식회사 | method for manufacturing of cmos image sensor |
| US7538374B2 (en) | 2004-11-09 | 2009-05-26 | Dongbu Electronics Co., Inc. | CMOS image sensor and method for fabricating the same |
| US7416914B2 (en) | 2004-12-14 | 2008-08-26 | Dongbu Electronics Co., Ltd. | Method of fabricating CMOS image sensor |
| KR100788351B1 (en) * | 2005-12-29 | 2008-01-02 | 동부일렉트로닉스 주식회사 | CMOS image sensor and method for fabricating of the same |
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