KR20020045707A - Semiconductor composition - Google Patents
Semiconductor composition Download PDFInfo
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- KR20020045707A KR20020045707A KR1020000075014A KR20000075014A KR20020045707A KR 20020045707 A KR20020045707 A KR 20020045707A KR 1020000075014 A KR1020000075014 A KR 1020000075014A KR 20000075014 A KR20000075014 A KR 20000075014A KR 20020045707 A KR20020045707 A KR 20020045707A
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- semiconductor composition
- semiconductor
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- heat
- carbon
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 49
- 239000000203 mixture Substances 0.000 title claims abstract description 29
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 17
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- 239000000843 powder Substances 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- 239000011574 phosphorus Substances 0.000 claims description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 3
- -1 column Chemical compound 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 239000004020 conductor Substances 0.000 abstract description 8
- 238000009792 diffusion process Methods 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 8
- 239000002131 composite material Substances 0.000 abstract 5
- 238000000465 moulding Methods 0.000 abstract 2
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 239000000615 nonconductor Substances 0.000 abstract 1
- 230000009466 transformation Effects 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 229910000906 Bronze Inorganic materials 0.000 description 3
- 239000010974 bronze Substances 0.000 description 3
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000003203 everyday effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003032 molecular docking Methods 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/40—Heating elements having the shape of rods or tubes
- H05B3/42—Heating elements having the shape of rods or tubes non-flexible
- H05B3/48—Heating elements having the shape of rods or tubes non-flexible heating conductor embedded in insulating material
- H05B3/50—Heating elements having the shape of rods or tubes non-flexible heating conductor embedded in insulating material heating conductor arranged in metal tubes, the radiating surface having heat-conducting fins
Landscapes
- Resistance Heating (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Powder Metallurgy (AREA)
Abstract
Description
본 발명은 반도체 조성물에 관한 것으로서, 카본 분말에 알루미늄 분말을 혼합한 후, 이를 불순물 인을 함유한 인산용액에 합침한 뒤, 700℃ 이상의 고온에서 소성시켜 이를 다시 분말로 가공한 후, 여기에 실리콘이나 흙, 황화구리, 세라믹 등의 비도체 분말을 2 가지 이상 선택적으로 혼합하여 소정의 형태로 성형한 뒤, 1000℃ 이상에서 소성 가공시켜 1차 반도체 조성물을 제조함과 동시에, 이 반도체 조성물을 분쇄시켜 생성된 반도체 분말에 크롬이나 동, 신주, 철 등의 도체 금속분말 또는 조각을 혼합하여, 발열체의 온도범위와 사용형태에 따라 소정의 형태로 성형한 뒤, 1000℃ 이상에서 소성 가공시켜 발열소재로서의 2차 반도체 조성물로 응용 제조시킨 것으로서, 이온 확산을 기본으로 한 반도체 변형으로 카본 분말에 이온을 주입시켜 전공을 형성, 유입된 전원 전자가 전공을 따라 확산되게 한 것으로, 이와 같이 고체화된 반도체를 반도체 조성물로서 사용함은 물론이고, 이를 응용하여 고체화된 반도체의 내부와 외부에 도체를 부착 또는 삽입하면 전원이 인가됨에 따라 전자가 전공만을 따라 움직이며 전원에서 인가된 전자가 카본에 함유된 페르미 준위에 가전자대를 교환, 반도체 내부 또는 외부의 도체 비례에 따라 열을 발생시켜 반도체에 의한 발열소재로서 사용할 수 있도록 한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor composition comprising mixing aluminum powder with carbon powder, impregnating it in a phosphoric acid solution containing impurity phosphorus, and then firing at a high temperature of 700 ° C. or higher to process the powder into silicon, followed by silicon Or at least two kinds of non-conductive powders such as soil, copper sulfide, and ceramics are selectively mixed to form a predetermined shape, and then plastically processed at 1000 ° C. or higher to prepare a primary semiconductor composition, and at the same time, grinding the semiconductor composition. Conductive metal powders or flakes such as chromium, copper, bronze, iron, etc., are mixed with the semiconductor powder produced, and formed into a predetermined shape according to the temperature range and usage form of the heating element, and then plastically processed at 1000 ° C. or higher to generate heat. As a secondary semiconductor composition as an application and manufactured, a semiconductor strain based on ion diffusion injects ions into carbon powder to form pores. The introduced power electrons are diffused along the major field, and the solidified semiconductor is used as a semiconductor composition. As a result, when the conductor is attached or inserted into the inside and the outside of the solidified semiconductor, the power is applied. Only electrons move along the electric field, and the electrons applied from the power supply exchange the valence band to the Fermi level contained in carbon and generate heat according to the proportion of the conductors inside or outside the semiconductor so that it can be used as a heating material by the semiconductor.
일반적으로 기존의 전원부 발열장치는 전기 저항으로 비롯된 열을 이용하여 발열하는 방식으로 한정되어 있었기 때문에 전력 소비의 극대화로 불필요한 에너지 소비가 이루어지는 폐단이 있었다.In general, since the existing power unit heat generating device was limited to a method of generating heat using heat generated from electrical resistance, there was a waste of unnecessary energy consumption by maximizing power consumption.
본 발명은 이와 같은 종래의 발열 방식이 가지고 있는 제반 문제점을 인식하여, 저항열 이외의 방법으로 발열하여 저에너지로서 고열을 발열시켜 일상 생활에서 사용할 수 있게 함으로써, 획기적인 에너지 절감이 이루어질 수 있도록 하기 위한 것을 목적으로 한다.The present invention recognizes all the problems of the conventional heating method, by generating heat by a method other than the resistance heat to generate a high heat as a low energy to use in everyday life, to achieve a significant energy savings The purpose.
이를 위하여 본 발명은 1차로 반도체 조성물을 생성하고, 2차로 이 반도체 조성물에 열도체를 합침하여 고열을 발생케 하는 인의 확산법에 준하여 에너지 준위를 확산시키는 반도체에 의한 발열소재로 이루어진다.To this end, the present invention consists of a heat generating material by a semiconductor which firstly produces a semiconductor composition and secondly diffuses an energy level in accordance with a diffusion method of phosphorus which causes a high temperature by incorporating a thermal conductor into the semiconductor composition.
그리고 상기 1차 반도체 조성물은 카본 분말에 알루미늄 분말을 혼합한 후, 불순물 이온을 인위적으로 합침하여 카본에 전공을 함유케하고, 이온이 함유된 카본에 황화구리나 실리콘 또는 세라믹 분말 등의 비도체 물질을 2가지 이상 선택적으로 합침하여 고압력으로 고체화시킨 카본 반도체로 구성되며, 이 1차 반도체 조성물을 반도체에 의한 발열소재로 응용하여 소비전력당 발열량을 획기적으로 증가시킴으로써, 종래의 전기 저항선에 의한 발열 방식에서 탈피하여 소비전력 대비 발열양을 크게 늘릴 수 있도록 하는 반도체에 의한 발열소재를 제공할 수 있도록 한 것을 특징으로 한다.In the primary semiconductor composition, aluminum powder is mixed with carbon powder, and then impregnated with impurity ions artificially to contain a major carbon, and non-conductive material such as copper sulfide, silicon or ceramic powder in carbon containing ions. Is composed of a carbon semiconductor solidified at high pressure by selectively impregnating at least two kinds thereof, and by applying the primary semiconductor composition as a heat generating material by a semiconductor, the amount of heat generated per power consumption is dramatically increased, thereby generating heat by a conventional electric resistance wire. It is characterized by the fact that it is possible to provide a heating material by a semiconductor that can significantly increase the amount of heat generated compared to the power consumption.
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도 1 은 본 발명의 일실시예의 종단면도,1 is a longitudinal sectional view of an embodiment of the present invention;
도 2 는 본 발명의 다른 일실시예의 종단면도,2 is a longitudinal sectional view of another embodiment of the present invention;
이하 본 발명의 바람직한 실시예를 구체적으로 설명하면 다음과 같다.Hereinafter, a preferred embodiment of the present invention will be described in detail.
일반적으로 카본은 도체중에서 저항계수가 가장 큰 비금속 원소로 알려져 있으며, 교류 전압의 직접 인가에도 전자 움직임을 둔화시켜 전공이 전자를 운반하기에 알맞는 조건을 제공함과 동시에, 순수 탄소분말로서, 불순물을 합침시키기에 적격이다.In general, carbon is known as a nonmetallic element having the largest resistance coefficient among conductors, and it is a pure carbon powder that combines impurities as a pure carbon powder while providing conditions suitable for transporting electrons by slowing electron movement even when direct application of an alternating voltage. Is eligible.
또한 인은 반도체 도킹 불순물로서 확산성이 뛰어나며, 실리콘과의 합침이 매우 용이하다.Phosphorus is also excellent in diffusivity as a semiconductor docking impurity and is very easy to integrate with silicon.
또한 실리콘은 타종에 비해 확산계수가 높아 인과 실리콘을 카본에 합침하여 전자의 확산을 최대극치를 이루게 합침됨으로써, 원하는 열량을 저열 및 고열로 자유자재 제작할 수 있으며, 보편적으로 24V, 110V, 220V 에서 고열을 얻는다.In addition, silicon has a higher diffusion coefficient than other kinds of silicon, so that phosphorus and silicon are combined with carbon to maximize the diffusion of electrons, so that the desired amount of heat can be freely produced with low heat and high heat, and is commonly used at 24V, 110V, and 220V. Get
본 발명의 반도체 조성물은 상기한 바와 같은 카본 분말에 먼저 알루미늄 분말을 2-20% 혼합한 후, 이를 불순물 인을 함유한 인산용액에 합침한 뒤, 700℃ 이상의 고온에서 소성시켜 이를 다시 분말로 가공한 후, 여기에 실리콘이나 흙, 황화구리, 세라믹 등의 비도체 분말을 2 가지 이상 선택적으로 혼합하여 소정의 형태로 성형한 뒤, 1000℃ 이상에서 소성 가공시켜 1차 반도체 조성물을 제조함과 동시에,이 반도체 조성물을 분쇄시켜 생성된 반도체 분말에 크롬이나 동, 신주, 철 등의 도체 금속 분말 또는 조각을 혼합하여, 발열체의 온도범위와 사용형태에 따라 소정의 형태로 성형한 뒤, 1000℃ 이상에서 소성 가공시켜 발열소재로서의 2차 반도체 조성물로 응용 제조된다.In the semiconductor composition of the present invention, the aluminum powder is first mixed with carbon powder as described above, 2-20%, and then, it is impregnated with a phosphoric acid solution containing impurity phosphorus, and then calcined at a high temperature of 700 ° C. or higher to process the powder again. Thereafter, two or more non-conductive powders such as silicon, soil, copper sulfide, ceramics, and the like are selectively mixed and molded into a predetermined shape, and then plastically processed at 1000 ° C. or higher to prepare a primary semiconductor composition. The semiconductor composition produced by pulverizing the semiconductor composition is mixed with conductive metal powder or flakes such as chromium, copper, bronze, iron, etc., and molded into a predetermined shape according to the temperature range and usage of the heating element, and then 1000 ° C. or more. It is plastically processed at and is manufactured into a secondary semiconductor composition as a heating material.
그리고 모든 분말의 배합량은 12-380V 범위의 사용 전압과 얻고자 하는 열량에 따라 변경, 선택되어지고, 사용 용도에 따라 크기와 형태가 원통형이나 사각형, 원형 등의 여러 형태로 만들어진다.All powders are blended and selected according to the operating voltage in the range of 12-380V and the amount of heat to be obtained, and the size and shape of the powder are made in various shapes such as cylindrical, square, and round.
이와 같이 제조되는 본 발명의 반도체 조성물은 이온 확산을 기본으로 한 반도체 변형으로 카본 분말에 이온을 주입시켜 전공을 형성, 유입된 전원 전자가 전공을 따라 확산되는 것으로, 이와 같이 고체화된 반도체를 반도체 조성물로서 사용함은 물론이고, 이를 응용하여 상기 고체화된 반도체 조성물(1)의 내부와 외부에 도체(2)를 부착 또는 삽입하면 전원(3)(3')이 인가됨에 따라 전자가 전공만을 따라 움직이며 전원에서 인가된 전자가 카본에 함유된 페르미 준위에 가전자대를 교란, 반도체 내부 또는 외부의 도체 비례에 따라 열을 발생시키게 되는 데, 상기 도체(2)로서, 크롬이나 동, 철, 신주, 니켈 등의 금속을 외부에 덮거나 반도체 조성물(1) 내부에 내장시켜 양측에 전압을 인가하면, 인 이온이 전공을 공급하고 전자가 전공을 따라 움직이며 전도체의 분자를 따라 전류가 인가되고 콘덴서와 같이 고유저항을 잃고 저항이 이변된 반도체의 전공을 따라 전자가 이동할 때 타금속의 전도대로 가전자를 끌어 올리며 생기는 가전자대를 금지대를 넘어 전도대의 위까지 끌어 발생되는 갭만큼 열로 발생된다.The semiconductor composition of the present invention prepared as described above is a semiconductor modification based on ion diffusion, in which ions are injected into the carbon powder to form pores, and the introduced power electrons are diffused along the pores. As a matter of course, when the conductor 2 is attached or inserted into the inside and the outside of the solidified semiconductor composition 1 by applying the same, as the power source 3, 3 'is applied, the electrons move only along the major. The electrons applied from the power source disturb the valence band in the Fermi level contained in the carbon, and generate heat according to the proportion of the conductors inside or outside the semiconductor. The conductors 2 are made of chromium, copper, iron, bronze, nickel Applying a voltage to both sides by covering a metal such as outside or by embedding it inside the semiconductor composition 1, phosphorus ions supply a hole, electrons move along the hole, and conduction When the current is applied along the molecules of, and the electrons move along the electric field of the semiconductor where the resistivity is changed and the resistance is changed like the capacitor, the valence band generated by pulling up the electronics with the conduction of other metal is pulled over the conduction band and over the conduction band. Heat is generated as much as the gap generated.
이와 같은 본 발명의 반도체 조성물은 발열체의 목적하는 온도범위와 사용형태에 따라 소정의 형태로 성형되어 1000℃ 이상의 고온에서 소성 가공되어 제조되며, 얻고자 하는 열량에 따라 혼합 물질의 양과 전도체 물질의 선택이 변경된다.Such a semiconductor composition of the present invention is molded into a predetermined form according to the desired temperature range and use form of the heating element and plastically manufactured at a high temperature of 1000 ° C. or higher, and the amount of the mixed material and the selection of the conductive material according to the amount of heat to be obtained. Is changed.
하기 본 발명의 시험예를 예시하였으나, 본 발명이 이에 한정되는 것은 아니다.Test examples of the present invention are illustrated below, but the present invention is not limited thereto.
실시예 :Example
하기와 같이 본 발명의 반도체 조성물을 조성하여 다음과 같은 결과가 도출되었다.The following results were obtained by forming the semiconductor composition of the present invention as follows.
따라서 이와 같은 본 발명의 반도체 조성물에 의하면, 반도체에 의한 발열소재로서 응용시, 종래의 기존의 발열 방식을 탈피하여 고발열 이온 확산에 의해 가장 최소한의 저에너지로서 일반 가정과 산업체의 난방 또는 산업용 보일러와 공업용 전기로 등의 에너지 및 비용 절감을 가져올 수 있을 뿐만 아니라, 전기 사용으로 열을 얻는 모든 가전제품의 에너지및 비용절감은 물론, 전기 사용량의 큰 절감으로 국가 에너지 절약정책에 크게 기여하게 되며, 전세계적으로 열을 필요로 하는 모든 국가에서 난방 및 열사용에 획기적인 발전을 가져올 수 있는 효과가 있다.Therefore, according to the semiconductor composition of the present invention, when applied as a heating material by a semiconductor, the conventional heating and heating method of the conventional household and industrial heating or industrial boilers and industrial electricity as the minimum low energy by the high heat generation ion diffusion away from the conventional heating method In addition to saving energy and costs, such as furnaces, energy and cost savings for all home appliances that generate heat through the use of electricity, as well as large savings in electricity consumption, will contribute greatly to the national energy saving policy. In all countries where heat is needed, there is an effect that can lead to dramatic developments in heating and heat use.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020000075014A KR20020045707A (en) | 2000-12-09 | 2000-12-09 | Semiconductor composition |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020000075014A KR20020045707A (en) | 2000-12-09 | 2000-12-09 | Semiconductor composition |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2020000034955U Division KR200223321Y1 (en) | 2000-12-13 | 2000-12-13 | Semiconductor heating element |
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| Publication Number | Publication Date |
|---|---|
| KR20020045707A true KR20020045707A (en) | 2002-06-20 |
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| KR1020000075014A KR20020045707A (en) | 2000-12-09 | 2000-12-09 | Semiconductor composition |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101035720B1 (en) * | 2009-04-01 | 2011-05-20 | (주)진평에스코 | Resistance Heaterin for carbon heater and the method thereof |
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| KR900008897A (en) * | 1988-11-28 | 1990-06-04 | 한형수 | Semiconducting PTC Ceramic Heating Element and Manufacturing Method Thereof |
| KR920012635A (en) * | 1990-12-29 | 1992-07-27 | 하기주 | Method of manufacturing filamentous heating element |
| JPH07187793A (en) * | 1993-12-27 | 1995-07-25 | Toshiba Corp | Structural member made of highly heat conductive silicon nitride and semiconductor package |
| KR19990068286A (en) * | 1999-02-24 | 1999-09-06 | 김창현 | Self regulation plain heater and manufacture method. |
| KR20000026604A (en) * | 1998-10-21 | 2000-05-15 | 김경태 | Flat heat generator using aluminum sheet |
| KR20000028608A (en) * | 1998-10-01 | 2000-05-25 | 김경태 | Planar resistance heating element |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR900008897A (en) * | 1988-11-28 | 1990-06-04 | 한형수 | Semiconducting PTC Ceramic Heating Element and Manufacturing Method Thereof |
| KR920012635A (en) * | 1990-12-29 | 1992-07-27 | 하기주 | Method of manufacturing filamentous heating element |
| JPH07187793A (en) * | 1993-12-27 | 1995-07-25 | Toshiba Corp | Structural member made of highly heat conductive silicon nitride and semiconductor package |
| KR20000028608A (en) * | 1998-10-01 | 2000-05-25 | 김경태 | Planar resistance heating element |
| KR20000026604A (en) * | 1998-10-21 | 2000-05-15 | 김경태 | Flat heat generator using aluminum sheet |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR101035720B1 (en) * | 2009-04-01 | 2011-05-20 | (주)진평에스코 | Resistance Heaterin for carbon heater and the method thereof |
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