KR20020044187A - a powder exclusion system of semiconductor equipment - Google Patents

a powder exclusion system of semiconductor equipment Download PDF

Info

Publication number
KR20020044187A
KR20020044187A KR1020000073151A KR20000073151A KR20020044187A KR 20020044187 A KR20020044187 A KR 20020044187A KR 1020000073151 A KR1020000073151 A KR 1020000073151A KR 20000073151 A KR20000073151 A KR 20000073151A KR 20020044187 A KR20020044187 A KR 20020044187A
Authority
KR
South Korea
Prior art keywords
gas
exhaust gas
vacuum pump
housing
powder
Prior art date
Application number
KR1020000073151A
Other languages
Korean (ko)
Inventor
하계수
Original Assignee
황인길
아남반도체 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 황인길, 아남반도체 주식회사 filed Critical 황인길
Priority to KR1020000073151A priority Critical patent/KR20020044187A/en
Publication of KR20020044187A publication Critical patent/KR20020044187A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D8/00Cold traps; Cold baffles

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: An apparatus for eliminating particles in semiconductor equipment is provided to prevent a wafer from being contaminated by a backward flow of dust and to increase a maintenance period of a vacuum pump and a scrubber, by making exhausting gas generated from a reaction chamber stagnated in a powder trap for a long time and by eliminating particles of the exhausting gas before the particles are induced to the vacuum pump. CONSTITUTION: The powder trap eliminates the particles of the exhausting gas, installed between the reaction chamber to which process gas is injected and the vacuum pump. The scrubber purifies the exhausting gas, installed in the rear part of the vacuum pump. A housing(11) has an inlet and an outlet of the exhausting gas, including a gas path(19) of a zigzag type between the inlet and the outlet of the exhausting gas. A condensation pipe(18) is bent as a zigzag type along the gas path of the housing, having a coil type. Coolant flows through the condensation pipe.

Description

반도체 제조장비의 이물질 제거장치{a powder exclusion system of semiconductor equipment}Debris removal device of semiconductor manufacturing equipment {a powder exclusion system of semiconductor equipment}

본 발명은 반도체 제조장비의 이물질 제거장치에 관한 것으로서, 보다 상세하게는 반응챔버와 진공펌프 사이에 설치되어 반도체 제조공정시 발생된 배기가스중의 유독가스 및 부식성 이물질을 효과적으로 응착 제거하여 웨이퍼의 품질을 향상시킴과 함께 장비의 수명을 연장시킬 수 있도록 된 파우더 트랩(powder trap)에관한 것이다.The present invention relates to an apparatus for removing foreign substances in semiconductor manufacturing equipment, and more particularly, is installed between a reaction chamber and a vacuum pump to effectively remove and remove toxic gases and corrosive foreign substances in exhaust gases generated during semiconductor manufacturing processes. It is about powder traps that improve the service life and extend the life of the machine.

일반적으로 반도체 제조공정 중에서 증착 및 확산, 식각 공정 등에는 실란과 아르신, 염화붕소 등의 유해가스와 수소 등의 공정용 가스를 사용하여 고온에서 수행되는데, 이 때 수소기와 실란계 가스등이 연소되면서 발화성가스와 부식성 이물질 및 유독성분을 함유한 유독가스 등이 다량 발생될 뿐만 아니라 웨이퍼와 반응하고 난 반응부산물 가스가 잔류하게 된다. 이러한 유해가스가 배기가스와 함께 그대로 대기로 방출되면, 인체 및 환경오염에 악영향을 끼치게 되는 바, 사용이 끝난 공정용 가스는 적절히 정화시켜서 대기로 배출해야 한다.Generally, in the semiconductor manufacturing process, the deposition, diffusion, and etching processes are performed at high temperature by using noble gases such as silane, arsine and boron chloride, and process gases such as hydrogen. At this time, hydrogen and silane gas are burned. In addition to the generation of ignitable gases, corrosive foreign substances and toxic gases containing toxic components, the reaction by-product gas reacted with the wafer remains. If such harmful gas is discharged to the atmosphere together with the exhaust gas, it adversely affects the human body and environmental pollution. Therefore, the used process gas should be properly purified and discharged to the atmosphere.

이에 따라 반도체 제조장비에는 도 1에 도시한 바와 같이, 공정가스가 주입되는 반응챔버(C)의 배기라인에 진공펌프(P)의 후측으로 제1, 2차 스크루버(S1)(S2)를 설치하여 배기가스를 정화시킨 후 방출하고 있다.Accordingly, in the semiconductor manufacturing equipment, as shown in FIG. 1, the first and second screwdrivers S1 and S2 are disposed in the exhaust line of the reaction chamber C into which the process gas is injected. It is installed and purified after exhaust gas is emitted.

그런데, 배기가스는 고온상태로 이동될 때는 괜찮으나, 대기와 접촉되거나 온도가 급격히 하강하게 되면 순간적으로 응축되고, 이로 인해 함유된 먼지와 함께 파우더를 생성시킨다. 이러한 파우더는 배기라인에 고착되어 배기압력을 상승시킴과 함께 진공펌프(P)로 유입되어 고장을 유발하고, 배기가스의 역류를 유발하여 웨이퍼를 오염시킬 뿐만 아니라 스크루버(S1)(S2)로 유입되어 그 가동효율을 저하시키는 등 여러 가지 문제점을 야기한다.By the way, the exhaust gas is fine when moved to a high temperature state, but when it comes into contact with the atmosphere or the temperature drops sharply, it is condensed instantaneously, thereby producing a powder with the contained dust. These powders are attached to the exhaust line to increase the exhaust pressure and flow into the vacuum pump (P) to cause a breakdown, and cause backflow of the exhaust gas to contaminate the wafer as well as to the screwer (S1) (S2). It causes a variety of problems, such as to reduce the operating efficiency.

따라서, 공정챔버(C)와 진공펌프(P) 사이에는 공정챔버(C)로부터 배출되는 배기가스중의 먼지를 미리 파우더로 응착시켜 제거하는 파우더 트랩(T)을 설치하고 있다.Therefore, a powder trap T is provided between the process chamber C and the vacuum pump P for adhering and removing dust in the exhaust gas discharged from the process chamber C with powder in advance.

도 2에는 이러한 파우더 트랩(T)의 종래의 구성을 개략적으로 도시하였는데, 이것은 하우징(1)의 몸체(2) 내부에 지그재그 형태로 절곡된 응착파이프(6)를 수용하여 리드(3)로 폐쇄한 뒤, 응착파이프(6)에 냉각수를 유동시키고 있다. 이에 따라 반응챔버(C)로부터 몸체(2)의 유입구(4)를 통해 들어온 배기가스가 응착파이프(6)와 접촉하면서 유출구(5)로 빠져나가도록 함으로써 배기가스중의 이물질을 응착파이프(6)에 부착 제거하고 있다.FIG. 2 schematically shows a conventional configuration of such a powder trap T, which receives the adhesive pipe 6 bent in a zigzag form inside the body 2 of the housing 1 and closes with the lid 3. After that, the cooling water is caused to flow through the adhesion pipe 6. As a result, the exhaust gas introduced from the reaction chamber C through the inlet port 4 of the body 2 exits the outlet port 5 while being in contact with the adhesion pipe 6, thereby releasing foreign substances in the exhaust gas into the adhesion pipe 6. ) Is attached and removed.

그러나, 이러한 종래의 파우더 트랩(T)은 단순히 하우징(1)내에 응축파이프(6)를 수용한 구성으로 배기가스의 트랩내에서의 정체시간이 매우 짧기 때문에 파우더가 충분히 응착되지 못한 채 진공펌프(P)로 빠져나갈 뿐 아니라 파우더가 단단하게 응착되지 못하였다. 이로 인해 단단하게 부착되지 못한 먼지는 거꾸로 공정이 진행되는 반응챔버(C)로 유입되어 웨이퍼에 부착됨으로써 수율 저하를 야기하였다. 또한, 발생된 파우더가 트랩(T) 후단의 배관과 진공펌프(P)로 유입되어 펌프의 수명을 단축시키고, 정기 분해소지의 기간을 단축시킬 뿐만 아니라 불시에 펌프를 정지시키는 원인이 되었다. 더욱이, 발생된 파우더가 진공펌프(P)를 지나 스크루버(S1)(S2)에까지 유입되어 그 점검주기도 단축시켜 장비의 가동율 저하에 따른 생산성 저하를 야기하였다.However, such a conventional powder trap (T) simply contains a condensation pipe (6) in the housing (1), because the stagnation time in the trap of the exhaust gas is very short, so that the powder is not sufficiently adhered to the vacuum pump ( Not only did it escape to P), but the powder did not adhere firmly. As a result, the dust, which is not firmly attached, is introduced into the reaction chamber C in which the process is inverted and attached to the wafer, thereby causing a decrease in yield. In addition, the generated powder flows into the pipe after the trap (T) and the vacuum pump (P) to shorten the life of the pump, shorten the period of regular disassembly and cause the pump to stop unexpectedly. In addition, the generated powder flows through the vacuum pump (P) to the scrubber (S1) (S2) to shorten the inspection period to cause a decrease in productivity due to the decrease in the operation rate of the equipment.

본 발명은 상술한 종래의 제반 문제점들을 감안하여 창출된 것으로서, 파우더 트랩의 이물질 응착효율을 크게 증대시킴으로써 먼지의 역류로 인한 웨이퍼 오염을 방지하고, 진공펌프와 스크루버의 정비주기를 늘려 장비의 가동율 향상에 의한 웨이퍼의 품질과 생산성 향상을 도모할 수 있는 반도체 제조장비의 이물질 제거장치를 제공함에 그 목적이 있다.The present invention has been made in view of the above-mentioned conventional problems, and greatly increases the adhesion efficiency of foreign substances in the powder trap, thereby preventing wafer contamination due to backflow of dust, and increasing the maintenance period of the vacuum pump and the screwer to increase the operation rate of the equipment. It is an object of the present invention to provide an apparatus for removing foreign substances in semiconductor manufacturing equipment that can improve wafer quality and productivity by improvement.

도 1은 반도체 제조장비의 일례를 개략적으로 나타낸 블록도,1 is a block diagram schematically showing an example of semiconductor manufacturing equipment;

도 2는 종래의 이물질 제거장치를 나타낸 단면도,Figure 2 is a cross-sectional view showing a conventional foreign material removal apparatus,

도 3은 본 발명에 의한 이물질 제거장치를 나타낸 단면도이다.3 is a cross-sectional view showing a foreign material removal apparatus according to the present invention.

〈도면의 주요 부분에 대한 부호의 설명〉<Explanation of symbols for main parts of drawing>

C: 반응챔버P: 진공펌프C: reaction chamber P: vacuum pump

S1, S2: 스크루버T: 파우더 트랩S1, S2: Screwer T: Powder Trap

11: (파우더 트랩의) 하우징14, 15: (하우징의) 격벽11: housing (of powder trap) 14, 15: bulkhead (of housing)

18: (파우더 트랩의) 응착파이프19: (하우징의) 가스통로18: Adhesion pipe (of powder trap) 19: Gas passage (of housing)

이와 같은 목적들을 달성하기 위해 본 발명에 의한 반도체 제조장비의 이물질 제거장치는, 공정가스가 주입되는 반응챔버와 진공펌프 사이에 설치되어 배기가스중의 이물질을 응착시켜 제거하는 파우더 트랩과, 진공펌프의 후측에 설치되어 배기가스를 정화시키는 스크루버를 구비하는 반도체 제조장비의 이물질 제거장치에 있어서, 파우더 트랩이, 배기가스의 유입 및 유출구를 가지며, 배기가스 유입 및 유출구 사이에 지그재그로 구획된 가스통로를 갖는 하우징; 코일형태로 구성되어 하우징의 가스통로를 따라 지그재그 형태로 절곡되며, 냉각수가 흐르는 응축파이프:로 이루어진 것을 특징으로 한다.In order to achieve the above objects, the foreign material removing apparatus of the semiconductor manufacturing equipment according to the present invention includes a powder trap installed between a reaction chamber into which a process gas is injected and a vacuum pump to adhere and remove foreign substances in exhaust gas, and a vacuum pump. In the foreign material removal apparatus of the semiconductor manufacturing equipment provided with the screwer which purifies exhaust gas, the powder trap has the inflow and outflow port of exhaust gas, and the gas cylinder partitioned by the zigzag between the exhaust gas inflow and outflow port is provided. A housing having a furnace; It is configured in a coil form is bent in a zigzag form along the gas passage of the housing, characterized in that consisting of a condensation pipe: flowing coolant.

이에 따라 본 발명은, 반응챔버에서 발생된 배기가스가 파우더 트랩내에서 장시간 정체하게 될 뿐만 아니라 응축파이프의 배기가스 접촉면적이 크게 증대되어 배기가스중의 이물질을 진공펌프로 유입되기 전에 집중적으로 응착시켜 제거할 수 있게 되므로 먼지의 역류로 인한 웨이퍼 오염방지는 물론 진공펌프와 스크루버의 정비주기를 늘릴 수 있어 장비의 가동율 향상에 의한 웨이퍼의 품질과 생산성 향상에 크게 기여하게 된다.Accordingly, the present invention not only causes the exhaust gas generated in the reaction chamber to be stagnated for a long time in the powder trap, but also greatly increases the contact area of the exhaust gas of the condensation pipe and concentrates condensation before introducing foreign substances in the exhaust gas into the vacuum pump. It can be removed to prevent wafer contamination due to backflow of dust as well as to increase the maintenance intervals of vacuum pumps and scrubbers, which greatly contributes to the improvement of wafer quality and productivity by improving the operation rate of equipment.

이와 같은 본 발명의 구체적 특징과 다른 이점들은 첨부된 도면을 참조한 이하의 바람직한 실시예의 설명으로 더욱 명확해질 것이다.Such specific features and other advantages of the present invention will become more apparent from the following description of the preferred embodiments with reference to the accompanying drawings.

도 1 및 도 3에서, 본 발명에 의한 반도체 제조장비의 이물질 제거장치는,예컨대 질화공정이나 금속 식각 공정을 수행하는 반응챔버(C)의 배기라인에 설치되며, 공정가스가 주입되는 반응챔버(C)와 이에 진공을 형성시켜 주는 진공펌프(P) 사이에 배기가스중의 이물질을 진공펌프(P)로 유입되기 전에 미리 응착시켜 제거하는 파우더 트랩(T)이 설치되고, 진공펌프(P)의 후측으로 반응챔버(C)에서 발생된 배기가스중의 유독가스를 정화시키는 제1차 및 2차 스크루버(S1)(S2)가 설치되어 구성된다.1 and 3, the foreign material removal apparatus of the semiconductor manufacturing equipment according to the present invention, for example, is installed in the exhaust line of the reaction chamber (C) performing the nitriding process or metal etching process, the reaction chamber (injected) A powder trap (T) is installed between C) and the vacuum pump (P) that forms a vacuum therein, before the foreign matter in the exhaust gas is introduced into the vacuum pump (P), thereby adhering and removing the powder trap (T). The primary and secondary screwers S1 and S2 for purifying the toxic gas in the exhaust gas generated in the reaction chamber C are provided to the rear side of the.

한편, 파우더 트랩(T)은 한쪽에 배기가스 유입구(16)를 가지고, 다른쪽에 유출구(17)를 갖는 하우징(11)과, 이 하우징(11)의 내부에 수용되어 냉각수를 유동시킴으로써 배기가스중의 이물질을 응착시키는 응착파이프(18)로 구성된다.On the other hand, the powder trap T has an exhaust gas inlet 16 on one side and a housing 11 having an outlet 17 on the other side, and is housed inside the housing 11 to allow the coolant to flow in the exhaust gas. It consists of an adhesion pipe 18 for adhering foreign matters.

하우징(11)은 응착파이프(18)가 수용될 수 있도록 한쪽이 개구된 몸체(12)와, 이 몸체(12)를 폐쇄하는 리드(13)로 이루어진다. 몸체(12)의 내부에는 본 발명의 특징에 따라 반응챔버(C)로부터 유입된 배기가스가 이동하는 지그재그 형태의 가스통로(19)가 형성된다. 이 가스통로(19)는 여러 가지 형태로 구성될 수 있는데, 바람직하기로는 도시된 바와 같이 몸체(12)와 리드(13)의 상호 대향하는 면에서 서로 엇갈리게 각각 돌출되어 교번적으로 배치되는 복수의 격벽(14)(15)들에 의해 몸체(12)의 내부공간이 구획됨으로써 형성된다.The housing 11 is composed of a body 12 having one side open so that the adhesive pipe 18 can be accommodated, and a lid 13 closing the body 12. In the interior of the body 12, a zigzag gas passage 19 in which the exhaust gas introduced from the reaction chamber C moves is formed in accordance with a feature of the present invention. The gas passage 19 may be configured in various forms. Preferably, as illustrated, a plurality of gas passages 19 are alternately protruded from each other on opposite sides of the body 12 and the lid 13. The inner space of the body 12 is partitioned by the partitions 14 and 15.

그리고, 응착파이프(18)는 하우징(11)의 가스통로(19)를 따라 지그재그 형태로 절곡되어 배치되며, 가스통로(19)의 전구간에서 코일형태로 구성된다.In addition, the adhesion pipe 18 is bent and arranged in a zigzag form along the gas passage 19 of the housing 11, and is configured in a coil form in all sections of the gas passage 19.

이에 따라 본 발명의 파우더 트랩(T)은 배기가스의 통과시 이와 접촉하는 응착파이프(18)의 반응면적과 길이가 종래에 비해 크게 증가되고, 배기가스가트랩(T)내에서 정체하는 시간도 그만큼 길어지게 된다. 따라서, 반응챔버(C)로부터 유입구(16)를 통해 트랩(T)내로 유입된 배기가스가 트랩(T)을 통과하여 유출구(17)로 빠져나갈 때는 그에 포함된 먼지 등의 이물질이 응착파이프(18)에 충분히 응착되어 제거된 상태로 유출되게 된다.Accordingly, the powder trap T of the present invention increases the reaction area and length of the adhesion pipe 18 in contact with the passage of the exhaust gas as compared with the prior art, and also the time for stagnating in the exhaust gas trap T It will be that long. Therefore, when the exhaust gas introduced into the trap T from the reaction chamber C through the inlet 16 passes through the trap T and exits the outlet 17, foreign substances such as dust contained therein are adhered to the adhesion pipe ( 18) It is sufficiently adhered to 18) and flows out in a removed state.

즉, 반응챔버(C)에서 발생된 고온의 배기가스가 파우더 트랩(T)을 지나게 되면 응착파이프(18)를 흐르는 냉각수에 의해 급속히 냉각됨으로써 그에 포함된 먼지 등의 이물질이 응착파이프(18)에 부착되어 제거되는데, 본 발명은 응착파이프(18)가 코일형태로 구성되어 배기가스와의 접촉면적이 매우 클 뿐만 아니라 배기가스가 종래와 달리 지그재그상의 가스통로(19)를 순차적으로 지나야 하므로 트랩(T)내에서의 정체시간이 상당히 길기 때문에 그에 포함된 이물질이 응착파이프(18)의 전부분에 걸쳐 충분히 응착될 수 있는 것이다.That is, when the high temperature exhaust gas generated in the reaction chamber (C) passes the powder trap (T), it is rapidly cooled by the cooling water flowing through the adhesion pipe (18) so that foreign matters such as dust contained therein are transferred to the adhesion pipe (18). In the present invention, the adhesive pipe 18 is configured in the form of a coil so that the contact area with the exhaust gas is very large, and the exhaust gas must sequentially pass through the zigzag gas passage 19 unlike the conventional trap. Since the stagnation time in T) is quite long, foreign matter contained therein can be sufficiently adhered over the entire portion of the adhesion pipe 18.

그러므로, 파우더 트랩(T)을 통과한 배기가스는 이물질이 대부분 제거된 상태가 되어 후속하는 진공펌프(P)나 스크루버(S1)(S2)에 파우더의 유입량이 최소화되며, 이에 따라 파우더에 의해 불필요하게 빈번히 발생되는 예방점검의 시간과 인원 투입을 효과적으로 방지할 수 있게 된다. 또한, 파우더가 충분히 긴 응착파이프(18)의 전부위에 단단히 부착될 수 있어 종래와 같이 먼지의 역류에 의한 웨이퍼의 오염도 방지할 수 있게 된다.Therefore, the exhaust gas passing through the powder trap T is in a state where most foreign matters are removed, thereby minimizing the inflow of powder into the subsequent vacuum pump P or the screwers S1 and S2. This can effectively prevent unnecessary and frequently occurring preventive maintenance time and personnel input. In addition, the powder can be firmly attached to the entirety of the sufficiently long adhesion pipe 18, thereby preventing contamination of the wafer due to the backflow of dust as in the prior art.

이상에서 설명한 바와 같이 본 발명에 의하면, 반응챔버에서 발생된 배기가스가 파우더 트랩내에서 장시간 정체하게 될 뿐만 아니라 응축파이프의 배기가스접촉면적이 크게 증대되어 배기가스중의 이물질을 진공펌프로 유입되기 전에 집중적으로 응착시켜 제거할 수 있게 된다. 이에 따라 먼지의 역류로 인한 웨이퍼 오염방지는 물론 진공펌프와 스크루버의 정비주기를 늘릴 수 있어 결과적으로 장비의 가동율 향상에 의한 웨이퍼의 품질과 생산성 향상에 크게 기여하게 된다.As described above, according to the present invention, not only the exhaust gas generated in the reaction chamber is stagnated for a long time in the powder trap, but also the exhaust gas contact area of the condensation pipe is greatly increased to introduce foreign substances in the exhaust gas into the vacuum pump. It can be concentrated and removed beforehand. As a result, wafer contamination due to backflow of dust can be prevented, and the maintenance intervals of vacuum pumps and scrubbers can be extended, and consequently, it greatly contributes to the improvement of wafer quality and productivity by improving the operation rate of equipment.

Claims (2)

공정가스가 주입되는 반응챔버와 진공펌프 사이에 설치되어 배기가스중의 이물질을 응착시켜 제거하는 파우더 트랩과, 상기 진공펌프의 후측에 설치되어 배기가스를 정화시키는 스크루버를 구비하는 반도체 제조장비의 이물질 제거장치에 있어서,The semiconductor manufacturing equipment includes a powder trap installed between the reaction chamber into which the process gas is injected and a vacuum pump to adhere and remove foreign substances in the exhaust gas, and a screwer installed at the rear side of the vacuum pump to purify the exhaust gas. In the foreign material removal device, 상기 파우더 트랩이,The powder trap, 배기가스의 유입 및 유출구를 가지며, 상기 배기가스 유입 및 유출구 사이에 지그재그로 구획된 가스통로를 갖는 하우징;A housing having an inlet and an outlet of exhaust gas, the housing having a gas passage zigzag partitioned between the exhaust gas inlet and outlet; 코일형태로 구성되어 상기 하우징의 가스통로를 따라 지그재그 형태로 절곡되며, 냉각수가 흐르는 응축파이프;로 이루어진 것을 특징으로 하는 반도체 제조장비의 이물질 제거장치.Contaminated in the form of a coil is bent in a zigzag form along the gas passage of the housing, the condensation pipe flowing coolant; foreign material removal apparatus of the semiconductor manufacturing equipment, characterized in that consisting of. 제 1 항에 있어서, 상기 가스통로는, 하우징의 몸체와 리드에서 각각 돌출하여 서로 교번적으로 배치되는 복수의 격벽에 의해 형성되는 것을 특징으로 하는 반도체 제조장비의 이물질 제거장치.The apparatus of claim 1, wherein the gas passage is formed by a plurality of partition walls protruding from the body and the lid of the housing, respectively, and alternately arranged.
KR1020000073151A 2000-12-05 2000-12-05 a powder exclusion system of semiconductor equipment KR20020044187A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020000073151A KR20020044187A (en) 2000-12-05 2000-12-05 a powder exclusion system of semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020000073151A KR20020044187A (en) 2000-12-05 2000-12-05 a powder exclusion system of semiconductor equipment

Publications (1)

Publication Number Publication Date
KR20020044187A true KR20020044187A (en) 2002-06-15

Family

ID=27679498

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000073151A KR20020044187A (en) 2000-12-05 2000-12-05 a powder exclusion system of semiconductor equipment

Country Status (1)

Country Link
KR (1) KR20020044187A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100718692B1 (en) * 2007-01-24 2007-05-15 김영훈 Cold trap
CN110384945A (en) * 2018-04-18 2019-10-29 北京北方华创微电子装备有限公司 Cold-trap, vacuum system and semiconductor processing equipment

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100718692B1 (en) * 2007-01-24 2007-05-15 김영훈 Cold trap
CN110384945A (en) * 2018-04-18 2019-10-29 北京北方华创微电子装备有限公司 Cold-trap, vacuum system and semiconductor processing equipment

Similar Documents

Publication Publication Date Title
TWI766019B (en) Apparatus for collection and subsequent reaction of liquid and solid effluent into gaseous effluent
KR100862684B1 (en) Apparatus for trapping by-product gas in semiconductor producing line
KR940016447A (en) Processing equipment
US4655800A (en) Waste gas exhaust system for vacuum process apparatus
KR100964320B1 (en) Aapparatus for collecting remaining chemicals and by-products in semiconductor processing using particle inertia
WO2017177398A1 (en) Apparatus for exhaust cooling
KR20100109762A (en) Aapparatus for collecting remaining chemicals and by-products in semiconductor processing using particle inertia
JP3215081B2 (en) Apparatus and method for removing exhaust gas from semiconductor manufacturing
KR20020044187A (en) a powder exclusion system of semiconductor equipment
JP2695764B2 (en) Waste gas treatment equipment for semiconductor manufacturing equipment
JP3215074B2 (en) Method and device for removing semiconductor manufacturing flue gas
KR20030081592A (en) Equipment for removing a by-product of exhast line in semiconductor product device
US11221182B2 (en) Apparatus with multistaged cooling
KR100311145B1 (en) Powder trap device of semiconductor equipment
KR20060013926A (en) Cold trap apparatus for manufacturing semiconductor
KR100790282B1 (en) Ventilation System For Semiconductor Manufacturing Equipment And Liquid TEOS Exhausting Method In Trap Employed Therein
KR20080112153A (en) A exhaust gas post-processing device of semiconductor
KR200283870Y1 (en) Low pressure chemical vapour deposition device
KR20020085481A (en) Apparatus for fabricating semiconductor
JPH09317645A (en) Evacuating system
JPH09306846A (en) Exhausting apparatus
KR20070071950A (en) Apparatus for manufacturing semiconductor device
KR20210061680A (en) a powder trap
KR100898064B1 (en) Equipment of dust collection for semi-conductor production having a cartridge type heater
US7108002B1 (en) Steam cleaning system and method for semiconductor process equipment

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination