KR20080112153A - A exhaust gas post-processing device of semiconductor - Google Patents

A exhaust gas post-processing device of semiconductor Download PDF

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KR20080112153A
KR20080112153A KR1020080057966A KR20080057966A KR20080112153A KR 20080112153 A KR20080112153 A KR 20080112153A KR 1020080057966 A KR1020080057966 A KR 1020080057966A KR 20080057966 A KR20080057966 A KR 20080057966A KR 20080112153 A KR20080112153 A KR 20080112153A
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waste gas
inlet
water
circulation tank
cooling
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KR1020080057966A
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Korean (ko)
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김도열
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김도열
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/34—Chemical or biological purification of waste gases
    • B01D53/74—General processes for purification of waste gases; Apparatus or devices specially adapted therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Environmental & Geological Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Biomedical Technology (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Treating Waste Gases (AREA)

Abstract

A post processing apparatus of wasted gas generated in a process of manufacturing a semiconductor is provided to block direct contact between silicon and oxygen hydride among wasted gas in cooling of wasted gas of relative high temperature generated in a process of manufacturing a semiconductor so that there is no pollution level of exhaust gas which is ejected to outside since production of powder is prevented. A post processing apparatus of wasted gas generated in a process of manufacturing a semiconductor comprises a first influx unit(100), a circulation chamber(200), a supply pipe(300), a transmission pipe(210) and a second influx unit(400). The wasted gas flows into the inside of the first influx unit by a collector as a medium(110). In the outer circumference of the first influx unit, a heater(120) is installed. The circulation chamber is installed at the lower part of the first influx unit. The supply pipe is extended from the lower part of the first influx unit to the inside of the first influx. In the inside of the supply pipe, cooling water which cools and purifies the wasted gas flows. In the upper end of the supply pipe, a water spary(310) is installed so that the cooling water is emitted to the inside of the first influx unit. The transmission pipe is installed at the circulation chamber so that the wasted gas passing through the circulation chamber is ejected. In the second influx unit, the wasted gas ejected in the transmission pipe is flowed from the lower part and is ejected to the top. In the inside of the second influx unit, a filter for removing moisture(410) of the flowed wasted gas is installed.

Description

반도체 제조공정에서 발생하는 폐가스의 후처리장치{A exhaust gas post-processing device of semiconductor}A exhaust gas post-processing device of semiconductor

본 발명은 반도체 제조공정에서 발생하는 폐가스의 후처리장치에 관한 것으로서, 더 상세하게는 반도체 제조공정에서 발생한 비교적 고온의 폐가스의 냉각시 상기 폐가스 중의 수소화규소와 산소의 직접적인 접촉을 차단하여 파우더의 생성이 방지되므로 외부로 배출되는 배기가스의 오염도가 전혀 없을 뿐만 아니라 배기효율이 우수한 반도체 제조공정에서 발생하는 폐가스의 후처리장치에 관한 것이다.The present invention relates to a post-treatment apparatus for waste gas generated in a semiconductor manufacturing process, and more particularly, to generate powder by blocking direct contact between silicon hydride and oxygen in the waste gas when cooling a relatively high temperature waste gas generated in a semiconductor manufacturing process. The present invention relates to a post-treatment apparatus for waste gas generated in a semiconductor manufacturing process having excellent exhaust efficiency as well as no pollution of exhaust gas discharged to the outside.

일반적으로 반도체를 제조하는 공정에서는 독성이 강하고 부식성이 강한 각종 공정가스와 함께 클리닝가스를 포함하여 여러 종류의 가스가 사용되고 있는데, 반도체 제조공정 후에 발생되는 배기가스에는 상기 가스들의 미반응 가스를 포함하여 각종 반응 생성물이나 미세먼지 등의 미립자가 다량 함유되어 있다. 따라서, 반도체 제조공정에서 배출되는 폐가스가 그대로 외부로 배출되는 경우 환경에 심각한 영향을 줄 수 있으므로 배기가스는 적절한 정화 처리장치를 거친 후 외부로 배출되어야만 한다.In general, in the semiconductor manufacturing process, various kinds of gases including cleaning gas are used together with various highly toxic and corrosive process gases. Exhaust gas generated after the semiconductor manufacturing process includes unreacted gases of the above gases. It contains a large amount of fine particles such as various reaction products and fine dust. Therefore, when the waste gas discharged from the semiconductor manufacturing process is discharged to the outside as it can seriously affect the environment, the exhaust gas must be discharged to the outside after the appropriate purification treatment device.

이에 따라, 종래에는 반도체 제조공정에서 발생하는 폐가스를 정화하기 위하여 폐가스를 가열한 다음 냉각수를 이용하여 상기 폐가스 중의 이물질을 제거하고, 압축공기를 이용하여 냉각시켰다.Accordingly, conventionally, in order to purify the waste gas generated in the semiconductor manufacturing process, the waste gas is heated, and then foreign matters in the waste gas are removed by using cooling water, and cooled by using compressed air.

그러나, 상기 압축공기에 포함된 산소(O2)가 상기 폐가스에 포함된 수소화규소(SiH4)와 반응하여 파우더가 생성되는데, 상기와 같이 생성된 파우더는 배관의 벽이나 하측에 침착되면서 배기가스의 흐름을 방해하는 단점이 있었다.However, powder (O2) contained in the compressed air reacts with silicon hydride (SiH4) contained in the waste gas, and powder is produced. The powder produced as described above is deposited on the wall or the bottom of the pipe, and the exhaust gas flows. There was a disadvantage to disturb.

본 발명은 상술한 문제점을 해결하고자 안출된 것으로서, 본 발명의 목적은 반도체 제조공정에서 발생한 비교적 고온의 폐가스의 냉각시 상기 폐가스 중의 수소화규소와 산소의 직접적인 접촉을 차단하여 파우더의 생성이 방지되므로 외부로 배출되는 배기가스의 오염도가 전혀 없을 뿐만 아니라 배기효율이 우수한 반도체 제조공정에서 발생하는 폐가스의 후처리장치를 제공하는 것이다.The present invention has been made to solve the above problems, an object of the present invention is to prevent the production of powder by blocking the direct contact of silicon hydride and oxygen in the waste gas when cooling the relatively high temperature waste gas generated in the semiconductor manufacturing process The present invention provides a post-treatment device for waste gas generated in a semiconductor manufacturing process that is excellent in exhaust efficiency as well as having no pollution of exhaust gas emitted from the furnace.

상기와 같은 문제점을 해결하기 위해 본 발명에 따른 반도체 제조공정에서 발생하는 폐가스의 후처리장치는, 폐가스가 포집구(110)를 매개로 내부로 유입되며, 외주면에는 히터(120)가 설치되는 제1유입부(100);와, 상기 제1유입부(100)의 하부에 설치되는 순환조(200);와, 상기 제1유입부(100)의 하부에서부터 내부까지 연장형성되되, 내부에는 상기 폐가스를 냉각 및 정화하는 냉각수가 유동되며, 상단에는 상기 냉각수가 상기 제1유입부(100)의 내부로 분사되도록 워터스프레이(310)가 설치되는 워터파이프(300);와, 상기 순환조(200)를 거친 폐가스가 배출되도록 상기 순환조(200)에 설치되는 송출파이프(210); 및 상기 송출파이프(210)에서 배출된 폐가스가 하부에서부터 유입되어 상부로 배출되되, 내부에는 상기 유입된 폐가스의 수분을 제거하는 수분제거필터(410)가 설치되는 제2유입부(400);를 포함하는 것을 특징으로 한다.In order to solve the above problems, in the aftertreatment apparatus for waste gas generated in the semiconductor manufacturing process according to the present invention, waste gas is introduced into the medium through the collecting port 110, and the heater 120 is installed on the outer circumferential surface thereof. 1 inlet portion 100; And, the circulation tank 200 is installed in the lower portion of the first inlet portion 100; And, extending from the bottom of the first inlet portion 100 to the inside, the inside Cooling water for cooling and purifying the waste gas flows, the water pipe 300 is installed at the top so that the cooling water is injected into the first inlet portion 100; And, the circulation tank 200 A discharge pipe 210 installed in the circulation tank 200 to discharge the waste gas passing through); And a second inflow unit 400 in which the waste gas discharged from the discharge pipe 210 is introduced from the lower portion and discharged to the upper portion, and a water removal filter 410 is installed therein to remove moisture from the introduced waste gas. It is characterized by including.

또한, 상기 워터스프레이(310)에 의해 분사된 냉각수가 외부로 배출되도록 상기 순환조(200)에 형성되는 제1배출구(220);와, 상기 워터스프레이(310)에 의해 분사된 냉각수가 폐가스와 반응하여 생성된 침전물이 외부로 배출되도록 상기 순환조(200)에 형성되는 제2배출구(230);를 더 포함하는 것을 특징으로 한다.In addition, the first discharge port 220 formed in the circulation tank 200 to discharge the cooling water injected by the water spray 310 to the outside; and the cooling water sprayed by the water spray 310 and the waste gas And a second discharge port 230 formed in the circulation tank 200 to discharge the precipitate generated by the reaction to the outside.

또한, 상기 제2유입부(400)의 내부로 압축된 냉각기를 공급하는 냉각장치(500);와, 상기 제2유입부(400)의 내부에 설치되되, 상기 냉각장치(500)로부터 공급되는 냉각기가 폐가스와 간접적으로 접촉되도록 다수개의 관(610)이 길이방향으로 배열되며, 상기 관(610)의 상단에는 상기 냉각장치(500)로부터 공급된 냉각기가 상기 제2유입부(400)의 외부로 배출되도록 형성되는 카트리지(600);를 더 포함하는 것을 특징으로 한다.In addition, a cooling device 500 for supplying a cooler compressed into the second inlet 400, and is installed in the second inlet 400, is supplied from the cooling device 500 A plurality of pipes 610 are arranged in the longitudinal direction such that the cooler is indirectly contacted with the waste gas, and the cooler supplied from the cooling device 500 is external to the second inlet 400 at an upper end of the pipe 610. It characterized in that it further comprises a; cartridge 600 is formed to be discharged to.

이상 상술한 바와 같이 본 발명에 따르면, 반도체 제조공정에서 발생한 비교적 고온의 폐가스의 냉각시 상기 폐가스 중의 수소화규소와 산소의 직접적인 접촉을 차단하여 파우더의 생성이 방지되므로 외부로 배출되는 배기가스의 오염도가 전혀 없을 뿐만 아니라 배기효율이 우수한 장점이 있다.As described above, according to the present invention, when cooling the relatively high temperature waste gas generated in the semiconductor manufacturing process, the direct contact between silicon hydride and oxygen in the waste gas is prevented, thus preventing the generation of powder. Not only is there any advantage, but the exhaust efficiency is excellent.

이하, 첨부된 도면을 참조하여 본 발명의 바람직한 실시예를 상세히 설명하기로 한다. 각 도면에 제시된 동일한 부호는 동일한 부재를 나타낸다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. Like reference numerals in the drawings denote like elements.

도 1에는 본 발명의 바람직한 실시예에 따른 반도체 제조공정에서 발생하는 폐가스의 후처리 장치의 전체를 나타낸 개략적인 개념도가 도시되어 있고, 도 2에는 본 발명의 바람직한 실시예에 따른 반도체 제조공정에서 발생하는 폐가스의 후처리장치의 카트리지의 정면도가 도시되어 있으며, 도 3에는 도 3의 A-A의 단면도가 도시되어 있는데, 본 발명의 바람직한 실시예에 따른 반도체 제조공정에서 발생하는 폐가스의 후처리 장치는, 제1유입부(100), 순환조(200), 워터파이프(300), 송출파이프(210), 제2유입부(400)가 포함되며, 포집구(110), 히터(120), 제1배출구(220), 제2배출구(230), 워터스프레이(310), 수분제거필터(410), 냉각장치(500) 및 카트리지(600)가 더 포함될 수 있다.FIG. 1 is a schematic conceptual view showing the entire waste gas aftertreatment apparatus generated in the semiconductor manufacturing process according to the preferred embodiment of the present invention, and FIG. 2 is generated in the semiconductor manufacturing process according to the preferred embodiment of the present invention. A front view of the cartridge of the waste gas aftertreatment apparatus is shown, and FIG. 3 is a cross-sectional view of AA of FIG. 3, wherein the waste gas posttreatment apparatus generated in the semiconductor manufacturing process according to the preferred embodiment of the present invention is The first inlet 100, the circulation tank 200, the water pipe 300, the discharge pipe 210, the second inlet 400 is included, the collecting port 110, the heater 120, the first The outlet 220, the second outlet 230, the water spray 310, the water removal filter 410, the cooling device 500 and the cartridge 600 may be further included.

상기 제1유입부(100)는 LCD 또는 반도체 제조공정에서 사용된 폐가스가 내부로 유입되는 곳으로서, 도 1에 도시된 바와 같이, 상단에는 폐가스가 상기 제1유입부(100)의 내부로 유입이 용이하도록 포집구(110)가 설치되는 것이 바람직하며, 상기 포집구(110)로 유입되는 폐가스는 예컨대, 블로워 등의 송출수단(미도시)을 매개로 전송될 수도 있다.The first inlet 100 is a place where the waste gas used in the LCD or semiconductor manufacturing process is introduced into the interior, as shown in Figure 1, the waste gas is introduced into the interior of the first inlet 100 at the top The collection port 110 is preferably installed to facilitate this, and the waste gas flowing into the collection port 110 may be transmitted through a delivery means (not shown), for example, a blower.

또한, 상기 제1유입부(100)의 외주면에는 상기와 같이 제1유입부(100)로 유입되는 폐가스를 가열하는 히터(120)가 설치되는 것이 바람직한데, 이러한 히터는 상기 폐가스를 고온의 플라즈마(Plasma)상태가 되도록 한다.In addition, the outer circumferential surface of the first inlet portion 100 is preferably provided with a heater 120 for heating the waste gas flowing into the first inlet portion 100 as described above, the heater is a high-temperature plasma Let it be in Plasma state.

상기와 같이 폐가스의 상태가 고온의 플라즈마 상태로 되면, 폐가스 중에 섞여 있는 이물질의 분해가 용이한 상태가 되며, 이러한 상태에서 후술할 워터스프레이(310)에서 냉각수가 분사되면, 이물질은 물과 반응하여 침전물이 발생된다. 상기와 같은 침전물은 후술할 순환조(200)로 유입되어 제2배출구(230)를 통해 외부로 배출된다.As described above, when the state of the waste gas is a high-temperature plasma state, it becomes easy to decompose the foreign matter mixed in the waste gas. In this state, when the coolant is injected from the water spray 310, the foreign matter reacts with water. A precipitate is generated. The precipitate as described above is introduced into the circulation tank 200 to be described later is discharged to the outside through the second outlet (230).

상기 순환조(200)는 상기 제1유입부(100)의 하측에 설치되는데, 이러한 순환조(200)는 상기 제1유입부(100)와 서로 연통되며, 상기 제1유입부(100)를 거친 폐가스가 유입된다.The circulation tank 200 is installed below the first inflow portion 100, and the circulation tank 200 communicates with the first inflow portion 100 and connects the first inflow portion 100. Coarse waste gas enters.

또한, 상기 순환조(200)의 측면에는 제1배출구(220)와 제2배출구(230)가 형성되는데, 상기 제1배출구(220)는 후술할 워터파이프(300)를 매개로 상기 제1유입부(100)의 내부로 공급되는 냉각수, 즉, 수분을 상기 순환조(200)의 외부로 배출하는 통공이며, 상기 제2배출구(230)는 상술한 바와 같이 폐가스 중에 섞여 있는 이물질과 반응한 침전물을 외부로 배출하는 통공이다.In addition, the first discharge port 220 and the second discharge port 230 is formed on the side of the circulation tank 200, the first discharge port 220 is the first inlet via the water pipe 300 to be described later Cooling water supplied to the inside of the part 100, that is, a through-hole for discharging the water to the outside of the circulation tank 200, the second outlet 230 is a precipitate reacted with the foreign matter mixed in the waste gas as described above It is a through-hole to discharge to the outside.

상기와 같은 제1배출구(220)와 제2배출구(230)에 대해 좀 더 상세히 설명하면, 상기 제1배출구(220)는 상기 순환조(200)의 측면에 형성되는 것이 바람직한데, 이러한 제1배출구(220)는 상기 순환조(200) 내부의 바닥면에 형성될 수도 있지만 바닥면에서부터 소정의 높이를 갖는 상태, 즉, 측면에 형성되는 것이 좋을 것이다.As described in more detail with respect to the first outlet 220 and the second outlet 230 as described above, the first outlet 220 is preferably formed on the side of the circulation tank 200, such a first The outlet 220 may be formed on the bottom surface of the circulation tank 200, but it may be formed on the side having a predetermined height from the bottom surface.

상기와 같이 제1배출구(220)의 높이가 바닥면과 높이의 차를 갖는 이유는, 상기 순환조(200)의 내부에 냉각수가 보관되어 상기 히터(120)에 의해 가열된 폐가스의 온도를 2차적으로 냉각하기 위함이며, 1차 냉각은 후술할 워터스프레이(310)에 의해 이루어 진다.The reason why the height of the first outlet 220 has a difference between the bottom surface and the height is that the coolant is stored in the circulation tank 200 and the temperature of the waste gas heated by the heater 120 is 2. In order to cool differentially, primary cooling is performed by the water spray 310 to be described later.

또한, 상기 제2배출구(230)는 상기 제1배출구와 마찬가지로 상기 순환조(200)의 측면에 형성되는데, 이러한 제2배출구(230)는 침전물의 제거시에만 개폐되는 것이 바람직할 것이다.In addition, the second outlet 230 is formed on the side surface of the circulation tank 200 similarly to the first outlet, and the second outlet 230 may be opened and closed only when the precipitate is removed.

상기 워터파이프(300)는 도 1에 도시된 바와 같이, 상기 제1유입부(100)의 하부에서부터 내부까지 설치되는 부재로서, 이러한 워터파이프(300)의 내부에는 상기 제1유입부(100)에 유입된 폐가스를 냉각 및 정화시키는 냉각수가 공급된다.As shown in FIG. 1, the water pipe 300 is a member installed from the bottom to the inside of the first inflow portion 100, and the first inflow portion 100 is formed in the water pipe 300. Cooling water for cooling and purifying the waste gas introduced into is supplied.

상기와 같이 워터파이프(300)의 내부로 공급된 냉각수는 상기 워터파이프(300)의 상단에 설치되는 워터스프레이(310)를 매개로 상기 제1유입부(100)의 내부로 분사되는데, 상기와 같이 분사되는 냉각수는 고온 플라즈마 상태의 폐가스와 반응되며, 반응시 생성되는 생성물은 낙하(落下)되어 상기 순환조의 바닥면에 침전된다.As described above, the coolant supplied into the water pipe 300 is sprayed into the first inlet 100 through the water spray 310 installed at the top of the water pipe 300. The cooling water sprayed together reacts with the waste gas in a high temperature plasma state, and the product generated during the reaction falls and precipitates on the bottom surface of the circulation tank.

상기 송출파이프(210)는 상기 순환조(200)를 거친 폐가스가 배출되도록 상기 순환조(200)에 설치되는데, 일측은 상기 순환조(200)에 타측은 후술할 제2유입부(400)에 각각 설치된다.The discharge pipe 210 is installed in the circulation tank 200 to discharge the waste gas passed through the circulation tank 200, one side to the second inlet 400 to be described later in the circulation tank 200. Each is installed.

또한, 상기 송출파이프(210)는 도 1에 도시된 바와 같이, 상기 순환조(200)의 내부로 소정의 길이를 갖는데, 상기와 같이 소정의 길이를 갖는 이유는, 상기 순환조(200)의 내부에 유동되는 기체의 비중을 고려하여 더 낮은 온도의 폐가스가 제2유입부(400)로 유입되도록 하기 위함이다.In addition, the delivery pipe 210 has a predetermined length into the circulation tank 200, as shown in Figure 1, the reason for having a predetermined length as described above, the This is to allow the waste gas at a lower temperature to flow into the second inlet 400 in consideration of the specific gravity of the gas flowing therein.

상기 제2유입부(400)는 순환조(200)를 거친 폐가스가 송출파이프(210)를 매개로 하부에서부터 유입되어 상부, 즉, 대기로 배출시키는 역할을 하며, 이러한 제2유입부(400)의 내부에는 수분제거필터(410)와 카트리지(600)가 설치된다.The second inlet part 400 serves to discharge waste gas that has passed through the circulation tank 200 from the lower part through the delivery pipe 210 to be discharged to the upper part, that is, the atmosphere, and the second inlet part 400. Inside the water removal filter 410 and the cartridge 600 is installed.

상기 수분제거필터(410)는 상기 제2유입부(400)의 내부에 설치되는데, 도 1에 도시된 바와 같이, 상기 제2유입부(400)의 내부로 수분이 침투되는 것이 방지되도록 상기 제2유입부(400)의 하부에 설치되되, 상기 제2유입부(400)의 내벽에 긴밀하게 설치되는 것이 바람직하다.The water removal filter 410 is installed inside the second inlet 400, as shown in FIG. 1, to prevent moisture from penetrating into the second inlet 400. 2 is installed on the lower portion of the inlet 400, it is preferable to be installed intimately on the inner wall of the second inlet 400.

이에 따라, 상기 수분제거필터(410)를 거친 폐가스는 수분이 건조된 상태로 제2유입부(400)의 상부로 이동되며, 상기와 같이 가스 중에 섞인 수분을 제거하는 수분제거필터(410)는 공지된 기술이므로 이에 대한 상세한 설명은 생략한다.Accordingly, the waste gas passed through the water removal filter 410 is moved to the upper portion of the second inlet 400 in a state where the water is dried, and the water removal filter 410 for removing water mixed in the gas as described above. Since it is a known technique, a detailed description thereof will be omitted.

상기 냉각장치(500)는 상기 제2유입부(400)의 내부로 냉각기를 유입시키는 역할을 하는데, 이러한 냉각기는 예컨대, 컴프레서(미도시)를 이용하여 압축시키는 것이 냉각효율의 측면에서 우수할 것이다.The cooling device 500 serves to introduce a cooler into the second inlet 400, and such a cooler may be compressed in a compressor (not shown), for example, in terms of cooling efficiency. .

상기와 같이 압축된 냉각기는 도 2에 도시된 카트리지(600)의 내부로 유입되어 상기 수분제거필터(410)를 거친 폐가스를 간접적으로 냉각시킨다.The cooler compressed as described above is introduced into the cartridge 600 illustrated in FIG. 2 to indirectly cool the waste gas that has passed through the water removal filter 410.

상기와 같이 폐가스를 간접적으로 냉각시키도록 상기 카트리지(600)는 다수개의 관(610)으로 구성되는데, 이러한 관(610)은 상기 제2유입부(400)의 길이방향과 동일한 방향으로 배열되는 것이 바람직하다.The cartridge 600 is composed of a plurality of pipes 610 to indirectly cool the waste gas as described above, such a pipe 610 is arranged in the same direction as the longitudinal direction of the second inlet (400). desirable.

또한, 도 3에 도시된 바와 같이, 상기 카트리지(600)의 해칭처리된 부분에는 폐가스가 유동되며, 해칭처리되지 않은 부분, 즉, 상기 다수개의 관(610)에는 상기 냉각장치로부터 유입되는 압축된 냉각기가 유동된다.In addition, as illustrated in FIG. 3, waste gas flows through the hatched portion of the cartridge 600, and the unhatched portion, that is, the plurality of pipes 610, is compressed from the cooling device. The cooler flows.

이에 따라, 폐가스와 압축된 냉각기는 직접적으로 접촉되지 않게 되는데, 폐가스에 포함된 수소화규소(SiH4)와 압축된 냉각기에 포함된 산소(O2)는 접촉이 완전히 차단되어 상기 제2유입관(610) 내부에 파우더의 생성 및 침착을 원천적으로 방지할 수 있는 것이 본 발명의 특징이다.Accordingly, the waste gas and the compressed cooler are not in direct contact. The silicon hydride (SiH 4) included in the waste gas and the oxygen (O 2) included in the compressed cooler are completely blocked from contacting the second inflow pipe 610. It is a feature of the present invention to be able to fundamentally prevent the generation and deposition of powder therein.

도면과 명세서에서 최적의 실시예들이 개시되었다. 여기서, 특정한 용어들이 사용되었으나, 이는 단지 본 발명을 설명하기 위한 목적에서 사용된 것이지 의미한정이나 특허청구범위에 기재된 본 발명의 범위를 제한하기 위하여 사용된 것은 아니다. 그러므로, 본 기술 분야의 통상의 지식을 가진자라면, 이로부터 다양한 변형 및 균등한 타 실시예가 가능하다는 점을 이해할 것이다. 따라서, 본 발명의 진정한 기술적 보호범위는 첨부된 특허청구범위의 기술적 사상에 의해 정해져야 할 것이다.The best embodiments have been disclosed in the drawings and the specification. Herein, specific terms have been used, but they are used only for the purpose of illustrating the present invention and are not intended to limit the scope of the present invention as defined in the claims or the claims. Therefore, those skilled in the art will understand that various modifications and equivalent other embodiments are possible from this. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims.

도 1은 본 발명의 바람직한 실시예에 따른 반도체 제조공정에서 발생하는 폐가스의 후처리장치의 전체를 나타낸 개략적인 개념도,1 is a schematic conceptual view showing the entirety of an aftertreatment apparatus for waste gas generated in a semiconductor manufacturing process according to a preferred embodiment of the present invention;

도 2는 본 발명의 바람직한 실시예에 따른 반도체 제조공정에서 발생하는 폐가스의 후처리장치의 카트리지의 정면도,2 is a front view of a cartridge of a waste gas aftertreatment apparatus generated in a semiconductor manufacturing process according to a preferred embodiment of the present invention;

도 3은 도 2의 A-A단면도 이다.3 is a cross-sectional view taken along the line A-A of FIG.

< 도면의 주요 부분에 대한 부호의 설명 ><Description of Symbols for Main Parts of Drawings>

100-제1유입부 110-포집구100-first inlet 110-collection

120-히터120-heater

200-순환조 210-송출파이프200-circulation tank 210-discharge pipe

220-제1배출구 230-제2배출구220-first outlet 230-second outlet

300-워터파이프 310-워터스프레이300-waterpipe 310-waterspray

400-제2유입부 410-수분제거필터400-second inlet 410-water removal filter

500-냉각장치500-chiller

600-카트리지 610-관600-cartridge 610-tube

Claims (3)

폐가스가 포집구(110)를 매개로 내부로 유입되며, 외주면에는 히터(120)가 설치되는 제1유입부(100);와Waste gas is introduced into the interior through the collecting port 110, the first inlet 100, the heater 120 is installed on the outer peripheral surface; and 상기 제1유입부(100)의 하부에 설치되는 순환조(200);와A circulation tank 200 installed below the first inflow portion 100; and 상기 제1유입부(100)의 하부에서부터 내부까지 연장형성되되, 내부에는 상기 폐가스를 냉각 및 정화하는 냉각수가 유동되며, 상단에는 상기 냉각수가 상기 제1유입부(100)의 내부로 분사되도록 워터스프레이(310)가 설치되는 워터파이프(300);와Water is formed extending from the lower portion of the first inlet portion 100 to the inside, the cooling water for cooling and purifying the waste gas flows therein, and the cooling water is sprayed into the first inlet portion 100 at an upper end thereof. Water pipe 300 is sprayed 310 is installed; and 상기 순환조(200)를 거친 폐가스가 배출되도록 상기 순환조(200)에 설치되는 송출파이프(210);와A discharge pipe 210 installed in the circulation tank 200 to discharge the waste gas passing through the circulation tank 200; and 상기 송출파이프(210)에서 배출된 폐가스가 하부에서부터 유입되어 상부로 배출되되, 내부에는 상기 유입된 폐가스의 수분을 제거하는 수분제거필터(410)가 설치되는 제2유입부(400);를 포함하는 것을 특징으로 하는 반도체 제조공정에서 발생하는 폐가스의 후처리장치.The second inlet 400, the waste gas discharged from the discharge pipe 210 is introduced from the bottom and discharged to the upper, the water removal filter 410 for removing the water of the introduced waste gas therein; A post-treatment apparatus for waste gas generated in a semiconductor manufacturing process, characterized in that. 청구항 1에 있어서,The method according to claim 1, 상기 워터스프레이(310)에 의해 분사된 냉각수가 외부로 배출되도록 상기 순환조(200)에 형성되는 제1배출구(220);와A first discharge port 220 formed in the circulation tank 200 to discharge the cooling water sprayed by the water spray 310 to the outside; and 상기 워터스프레이(310)에 의해 분사된 냉각수가 폐가스와 반응하여 생성된 침전물이 외부로 배출되도록 상기 순환조(200)에 형성되는 제2배출구(230);를 더 포함하는 것을 특징으로 하는 반도체 제조공정에서 발생하는 폐가스의 후처리장치.And a second discharge port 230 formed in the circulation tank 200 so that the coolant injected by the water spray 310 reacts with the waste gas to be discharged to the outside. After-treatment of waste gas generated in the process. 청구항 1에 있어서,The method according to claim 1, 상기 제2유입부(400)의 내부로 압축된 냉각기를 공급하는 냉각장치(500);와Cooling apparatus 500 for supplying a cooler compressed into the second inlet 400; And 상기 제2유입부(400)의 내부에 설치되되, 상기 냉각장치(500)로부터 공급되는 냉각기가 폐가스와 간접적으로 접촉되도록 다수개의 관(610)이 길이방향으로 배열되며, 상기 관(610)의 상단에는 상기 냉각장치(500)로부터 공급된 냉각기가 상기 제2유입부(400)의 외부로 배출되도록 형성되는 카트리지(600);를 더 포함하는 것을 특징으로 하는 반도체 제조공정에서 발생하는 폐가스의 후처리 장치.Is installed inside the second inlet 400, a plurality of pipes 610 are arranged in the longitudinal direction so that the cooler supplied from the cooling device 500 indirectly in contact with the waste gas, of the pipe 610 After the waste gas generated in the semiconductor manufacturing process characterized in that it further comprises a; cartridge 600 is formed so that the cooler supplied from the cooling device 500 is discharged to the outside of the second inlet 400 Processing unit.
KR1020080057966A 2007-06-19 2008-06-19 A exhaust gas post-processing device of semiconductor KR20080112153A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101855511B1 (en) * 2017-09-04 2018-06-11 (주)쏠츠 Exhaust gas purification apparatus for semiconductor production process
CN115350577A (en) * 2022-07-29 2022-11-18 北京京仪自动化装备技术股份有限公司 Waste gas treatment reaction device and semiconductor waste gas treatment system

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101855511B1 (en) * 2017-09-04 2018-06-11 (주)쏠츠 Exhaust gas purification apparatus for semiconductor production process
CN115350577A (en) * 2022-07-29 2022-11-18 北京京仪自动化装备技术股份有限公司 Waste gas treatment reaction device and semiconductor waste gas treatment system
CN115350577B (en) * 2022-07-29 2024-02-02 北京京仪自动化装备技术股份有限公司 Exhaust gas treatment reaction device and semiconductor exhaust gas treatment system

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