KR20020041900A - Nitride compound semiconductor vertical-cavity surface-emitting laser - Google Patents

Abstract

PURPOSE: A nitride semiconductor vertical-cavity surface-emitting laser is provided to equally inject an electric current at an electric current inputting area by employing a thin p-n tunnel junction layer as the electric current inputting area and by forming a lower ohmic contact layer and an upper ohmic contact layer as n-type nitrides semiconductor layer. CONSTITUTION: An electric current inputting area of a nitride semiconductor vertical-cavity surface-emitting laser is constituted of a tunnel junction area comprising a p-type nitride semiconductor layer and a n-type nitride semiconductor layer. In the p-type nitride semiconductor layer, a p-type dopant having a concentration of 5x10¬18 - 1x10¬21cm¬-3 is doped. In the n-type nitride semiconductor layer, a n-type dopant having a concentration of 5x10¬18 -1x10¬21cm¬-3 is doped. A lower mirror stack(20) and a n-type ohmic contact layer(30) are deposited onto a substrate(10) in sequence. A n-type lower clad layer(40), an activation layer(50), a p-type upper clad layer(60) and a n-type upper ohmic contact layer(80) are deposited onto a central upper surface of the n-type ohmic contact layer(30). The tunnel junction area(70) comprising the p-type nitride semiconductor layer(72) and the n-type nitride semiconductor layer(74) is deposited onto a central upper surface of the p-type upper clad layer(60).

Description

Nitride compound semiconductor vertical-cavity surface-emitting laser

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vertical-cavity surface-emitting laser (VCSEL), and more particularly to a nitride semiconductor vertical-resonant surface-emitting laser having a tunnel junction structure.

Recently, interest in VCSELs is increasing. VCSELs emit light perpendicular to the substrate surface and have several advantages, including the possibility of a two-dimensional array. VCSELs typically comprise a lower and upper mirror stack with an active region interposed therebetween.

The use of mirror stacks in VCSELs is widely established technically. However, when the mirror stack is used, various problems related to ultraviolet or visible light emission due to the low reflectance of the mirror stack appear. In general, a mirror stack consists of a plurality of pairs of layers, often referred to as mirror pairs. Stacked pairs are usually formed of a material system consisting of two materials with different refractive indices and easy lattice matching to different parts of the VCSEL.

In the case of nitride semiconductor VCSEL, AlGaN / GaN material system is generally used as the mirror stack. However, when the Al composition ratio is increased, a lattice mismatch between AlGaN and GaN becomes large, resulting in a crack, and thus there is a limit that the Al composition ratio cannot be greatly increased. On the contrary, when the AlGaN / GaN mirror stack having a small Al composition ratio is used, it is difficult to obtain high reflectance because the difference in refractive index between AlGaN and GaN is small. Therefore, instead of the epitaxial AlGaN / GaN mirror stack, a dielectric mirror stack such as SiO ₂ / HfO ₂ and SiO ₂ / ZrO ₂ deposited by electron beam or sputtering may be used.

In the case of AlGaN / GaN mirror stack, as Al composition ratio increases, doping of AlGaN becomes difficult. Even with p-type doping in GaN, hole concentration is difficult to exceed 1 × 10 ¹⁸ cm ^-3 , and p-type doping in AlGaN with Al composition ratio of 20% or more is almost impossible. Even if doped with p-type, the resistivity is more than a few tens of OMEGA cm, so current cannot flow through the AlGaN / GaN mirror stack to the active region where light is emitted. Even in the dielectric mirror stack, since the dielectric mirror stack is a non-conductor, current cannot flow through the dielectric mirror stack to the active region.

Despite the difficulty of manufacturing the mirror stack and injecting the current, the nitride semiconductor VCSEL capable of ultraviolet / blue / green light emission, unlike the side emitting laser, is a very small laser that emits a circular beam and enables two-dimensional arrangement. Therefore, the present invention can be very usefully applied to high density optical data storage devices and medical devices.

A lower mirror stack made of epitaxial AlGaN / GaN is formed on a substrate, and an InGaN / GaN active region and an upper mirror stack made of a dielectric are sequentially formed on the lower mirror stack to form a VCSEL, followed by optical pumping. There is a report to operate VCSEL. In addition, after epitaxially forming an InGaN / GaN active region on the substrate, the substrate is removed, and the VCSEL structure is completed by depositing a dielectric mirror stack formed of SiO ₂ / HfO ₂ on both sides of the active region, thereby optically pumping. There is also a report to operate VCSEL.

In the case of the above two reports, the operation is not performed by the current injection but by the optical pumping. In other words, the development of VCSEL by current injection has not been made properly. This is because, as described above, current cannot be injected into the active region through AlGaN / GaN or dielectric mirror stack. Therefore, the method of injecting current into the active region has become a key technology for the development of nitride semiconductor VCSEL.

In order to inject current, an ohmic metal contact must be formed in an intra-cavity having an active region, and there must be a current aperture that induces and injects current only into a desired portion. In this case, the current is injected from the side of the ohmic contact layer and injected into the active region through the current inlet. If the ohmic contact layer is a p-type nitride semiconductor, the resistivity is large, so that the current is not evenly distributed over the entire area of the current inlet. In this case, the current is injected only at the edge of the current inlet, making the VCSEL driving impossible.

Therefore, the technical problem to be achieved by the present invention, by introducing a high concentration doped thin pn tunnel junction layer into the current inlet to form both the lower ohmic contact layer and the upper ohmic contact layer as an n-type nitride semiconductor layer over the entire current inlet The present invention provides a nitride semiconductor VCSEL that enables even current injection.

1 is a cross-sectional view illustrating a nitride semiconductor VCSEL according to a first embodiment of the present invention;

2 is a cross-sectional view illustrating a nitride semiconductor VCSEL according to a second embodiment of the present invention;

3 is a cross-sectional view illustrating a nitride semiconductor VCSEL according to a third embodiment of the present invention;

4 is a cross-sectional view illustrating a nitride semiconductor VCSEL according to a fourth embodiment of the present invention;

5 is a cross-sectional view illustrating a nitride semiconductor VCSEL according to a fifth embodiment of the present invention;

6 is a cross-sectional view illustrating a nitride semiconductor VCSEL according to a sixth embodiment of the present invention;

7 is a cross-sectional view illustrating a nitride semiconductor VCSEL according to a seventh embodiment of the present invention;

8 is a cross-sectional view illustrating a nitride semiconductor VCSEL according to an eighth embodiment of the present invention;

9 is a cross-sectional view illustrating a nitride semiconductor VCSEL according to a ninth embodiment of the present invention;

10 is a cross-sectional view illustrating a nitride semiconductor VCSEL according to a tenth embodiment of the present invention;

11 is a cross-sectional view illustrating a nitride semiconductor VCSEL according to an eleventh embodiment of the present invention;

12 is a cross-sectional view for describing a nitride semiconductor VCSEL according to a twelfth embodiment of the present invention.

<Description of Reference Numbers for Main Parts of Drawings>

10: substrate 10 ': n-type substrate

10 ": conductive auxiliary plate 20: lower mirror stack

20 ': n-type lower mirror stack 20 ": dielectric lower mirror stack

30: n-type lower ohmic contact layer 40: n-type lower clad layer

40 ': p-type lower cladding layer 50: active layer

60: p-type upper clad layer 60 ': n-type upper clad layer

65: n-type auxiliary cladding layer 70, 70 ': tunnel junction layer

72: p-type nitride semiconductor layer 74: n-type nitride semiconductor layer

80: n-type upper ohmic contact layer 90: upper mirror stack

90 ': n-type upper mirror stack 100: n-type lower ohmic metal electrode

110: n-type upper ohmic metal electrode

The nitride semiconductor vertical resonance surface emitting laser according to the present invention for achieving the above technical problem is a p-type nitride semiconductor layer and 5 × 10 doped with a p-type dopant at a concentration of 5 × 10 ¹⁸ ~ 1 × 10 ²¹ cm ^{-3 18-1} is characterized in that it comprises a current-injection port is an n-type nitride semiconductor layer is doped n-type dopant consisting of a tunnel junction region joined to each other at a concentration of × 10 ²¹ cm ^-3.

Specifically, the nitride semiconductor vertical resonance surface emitting laser according to the first example of the present invention for achieving the above technical problem; A lower mirror stack and an n-type lower ohmic contact layer sequentially stacked on the substrate; An n-type lower clad layer, an active layer, a p-type upper clad layer, and an n-type upper ohmic contact layer sequentially stacked on an upper surface of the center of the n-type lower ohmic contact layer to form a mesa structure; P-type doped with a p-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ^-3 formed in a mesa shape on the central upper surface of the p-type upper clad layer and buried by the n-type upper ohmic contact layer A tunnel junction layer having a structure in which a nitride semiconductor layer and an n-type nitride semiconductor layer doped with an n-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ⁻³ are sequentially stacked; An upper mirror stack formed on a center upper surface of the n-type upper ohmic contact layer; An n-type ohmic metal electrode formed at edges of an upper surface of the n-type upper ohmic contact layer and the n-type lower ohmic contact layer, respectively; And the n-type lower ohmic contact layer, the n-type lower clad layer, the active layer, the p-type upper clad layer, the n-type upper ohmic contact layer, and the tunnel junction layer are made of a nitride semiconductor.

According to a second aspect of the present invention, there is provided a nitride semiconductor vertical resonance surface emitting laser; An n-type lower ohmic contact layer formed on the substrate; An n-type lower mirror stack, an n-type lower clad layer, an active layer, a p-type upper clad layer, and an n-type upper ohmic contact layer sequentially stacked on a center upper surface of the n-type lower ohmic contact layer to form a mesa structure; P-type doped with a p-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ^-3 formed in a mesa shape on the central upper surface of the p-type upper clad layer and buried by the n-type upper ohmic contact layer A tunnel junction layer having a structure in which a nitride semiconductor layer and an n-type nitride semiconductor layer doped with an n-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ⁻³ are sequentially stacked; An upper mirror stack formed on a center upper surface of the n-type upper ohmic contact layer; An n-type ohmic metal electrode formed at edges of an upper surface of the n-type upper ohmic contact layer and the n-type lower ohmic contact layer, respectively; The n-type lower ohmic contact layer, the n-type lower mirror stack, the n-type lower clad layer, the active layer, the p-type upper clad layer, the n-type upper ohmic contact layer and the tunnel junction layer is characterized in that the nitride semiconductor do.

According to a third embodiment of the present invention, a nitride semiconductor vertical resonant surface emitting laser is provided; An n-type lower ohmic contact layer formed on the substrate; An n-type lower clad layer, an active layer, a p-type upper clad layer, and an n-type upper ohmic contact layer sequentially stacked on an upper surface of the center of the n-type lower ohmic contact layer to form a mesa structure; P-type doped with a p-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ^-3 formed in a mesa shape on the central upper surface of the p-type upper clad layer and buried by the n-type upper ohmic contact layer A tunnel junction layer having a structure in which a nitride semiconductor layer and an n-type nitride semiconductor layer doped with an n-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ⁻³ are sequentially stacked; An upper mirror stack formed on a center upper surface of the n-type upper ohmic contact layer; An n-type ohmic metal electrode formed at edges of an upper surface of the n-type upper ohmic contact layer and the n-type lower ohmic contact layer, respectively; A lower mirror stack formed on a rear surface of the substrate; And the n-type lower ohmic contact layer, the n-type lower clad layer, the active layer, the p-type upper clad layer, the n-type upper ohmic contact layer, and the tunnel junction layer are made of a nitride semiconductor.

According to the fourth embodiment of the present invention for achieving the above technical problem, the nitride semiconductor vertical resonance surface light emitting laser; an n-type lower clad layer, an active layer, a p-type upper clad layer, and an n-type upper ohmic contact layer sequentially stacked on the n-type lower ohmic contact layer; P-type doped with a p-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ^-3 formed in a mesa shape on the central upper surface of the p-type upper clad layer and buried by the n-type upper ohmic contact layer A tunnel junction layer having a structure in which a nitride semiconductor layer and an n-type nitride semiconductor layer doped with an n-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ⁻³ are sequentially stacked; An upper mirror stack formed in a mesa shape on a center upper surface of the n-type upper ohmic contact layer; A lower mirror stack formed in a mesa shape on a center lower surface of the n-type lower ohmic contact layer; An n-type ohmic metal electrode formed at an edge of an upper surface of the n-type upper ohmic contact layer and a lower surface of the n-type lower ohmic contact layer; An n-type ohmic metal electrode formed on the n-type upper ohmic contact layer and a conductive auxiliary plate attached to the upper mirror stack; And the n-type lower ohmic contact layer, the n-type lower clad layer, the active layer, the p-type upper clad layer, the n-type upper ohmic contact layer, and the tunnel junction layer are made of a nitride semiconductor.

According to a fifth embodiment of the present invention, a nitride semiconductor vertical resonant surface emitting laser is provided; an n-type lower mirror stack, an n-type lower clad layer, an active layer, a p-type upper clad layer and an n-type upper ohmic contact layer sequentially stacked on the n-type substrate; P-type doped with a p-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ^-3 formed in a mesa shape on the central upper surface of the p-type upper clad layer and buried by the n-type upper ohmic contact layer A tunnel junction layer having a structure in which a nitride semiconductor layer and an n-type nitride semiconductor layer doped with an n-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ⁻³ are sequentially stacked; An upper mirror stack formed on a center upper surface of the n-type upper ohmic contact layer; An n-type upper ohmic metal electrode formed on an upper edge of the n-type upper ohmic contact layer; An n-type lower ohmic metal electrode formed on a rear surface of the n-type substrate; And the n-type substrate, the n-type lower mirror stack, the n-type lower clad layer, the active layer, the p-type upper clad layer, the n-type upper ohmic contact layer, and the tunnel junction layer are made of a nitride semiconductor.

According to the sixth aspect of the present invention, there is provided a nitride semiconductor vertical resonance surface emitting laser; an n-type lower mirror stack, an n-type lower clad layer, an active layer, a p-type upper clad layer, an n-type auxiliary clad layer, and an n-type upper mirror stack sequentially stacked on an n-type substrate; A p-type nitride formed in a mesa shape on a central upper surface of the p-type upper cladding layer and buried by the n-type auxiliary cladding layer and doped with a p-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ^-3 . A tunnel junction layer having a structure in which a semiconductor layer and an n-type nitride semiconductor layer doped with an n-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ⁻³ are sequentially stacked; An n-type upper ohmic metal electrode formed at an edge of the n-type upper mirror stack; And an n-type lower ohmic metal electrode formed on a rear surface of the n-type substrate, wherein the n-type substrate, n-type lower mirror stack, n-type lower cladding layer, active layer, p-type upper cladding layer, n-type auxiliary cladding layer, The tunnel junction layer and the n-type upper mirror stack are made of a nitride semiconductor.

According to a seventh aspect of the present invention, there is provided a nitride semiconductor vertical resonance surface emitting laser; A lower mirror stack and an n-type lower ohmic contact layer sequentially stacked on the substrate; A p-type lower cladding layer, an active layer, an n-type upper cladding layer, and an n-type upper ohmic contact layer sequentially stacked on an upper surface of an n-type lower ohmic contact layer to form a mesa structure; The n-type lower ohmic contact layer is formed in a mesa shape and buried by the p-type lower cladding layer, and the n-type dopant is doped at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ^-3 . A tunnel junction layer having a structure in which a nitride semiconductor layer and a p-type nitride semiconductor layer doped with a p-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ⁻³ are sequentially stacked; An upper mirror stack formed on a center upper surface of the n-type upper ohmic contact layer; An n-type ohmic metal electrode formed at edges of an upper surface of the n-type upper ohmic contact layer and the n-type lower ohmic contact layer, respectively; And the n-type lower ohmic contact layer, the p-type lower clad layer, the active layer, the n-type upper clad layer, the n-type upper ohmic contact layer, and the tunnel junction layer are made of a nitride semiconductor.

According to an eighth aspect of the present invention, there is provided a nitride semiconductor vertical resonance surface emitting laser; An n-type lower ohmic contact layer formed on the substrate; An n-type lower mirror stack, a p-type lower clad layer, an active layer, an n-type upper clad layer, and an n-type upper ohmic contact layer sequentially stacked on a center upper surface of the n-type lower ohmic contact layer to form a mesa structure; N-type nitride formed in a mesa shape on the center upper surface of the n-type lower mirror stack and buried by the p-type lower cladding layer and doped with an n-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ^-3 A tunnel junction layer having a structure in which a semiconductor layer and a p-type nitride semiconductor layer doped with a p-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ⁻³ are sequentially stacked; An upper mirror stack formed on a center upper surface of the n-type upper ohmic contact layer; An n-type ohmic metal electrode formed at edges of an upper surface of the n-type upper ohmic contact layer and the n-type lower ohmic contact layer, respectively; And the n-type lower ohmic contact layer, the n-type lower mirror stack, the p-type lower clad layer, the active layer, the n-type upper clad layer, the n-type upper ohmic contact layer and the tunnel junction layer. do.

According to a ninth example of the present invention, a nitride semiconductor vertical resonance surface emitting laser is provided; An n-type lower ohmic contact layer formed on the substrate; A p-type lower cladding layer, an active layer, an n-type upper cladding layer, and an n-type upper ohmic contact layer sequentially stacked on an upper surface of an n-type lower ohmic contact layer to form a mesa structure; The n-type lower ohmic contact layer is formed in a mesa shape and buried by the p-type lower cladding layer, and the n-type dopant is doped at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ^-3 . A tunnel junction layer having a structure in which a nitride semiconductor layer and a p-type nitride semiconductor layer doped with a p-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ⁻³ are sequentially stacked; An upper mirror stack formed on a center upper surface of the n-type upper ohmic contact layer; An n-type ohmic metal electrode formed at edges of an upper surface of the n-type upper ohmic contact layer and the n-type lower ohmic contact layer; A lower mirror stack formed on a rear surface of the substrate; Including;

The n-type lower ohmic contact layer, the p-type lower clad layer, the active layer, the n-type upper clad layer, the n-type upper ohmic contact layer and the tunnel junction layer is characterized in that the nitride semiconductor.

The nitride semiconductor vertical resonant surface light emitting laser according to a tenth example of the present invention for achieving the above technical problem; a p-type lower clad layer, an active layer, an n-type upper clad layer, and an n-type upper ohmic contact layer sequentially stacked on the n-type lower ohmic contact layer; An n-type nitride formed in a mesa shape on a central upper surface of the n-type lower ohmic contact layer and buried by the p-type lower clad layer and doped with an n-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ^-3 . A tunnel junction layer having a structure in which a semiconductor layer and a p-type nitride semiconductor layer doped with a p-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ⁻³ are sequentially stacked; An upper mirror stack formed in a mesa shape on a center upper surface of the n-type upper ohmic contact layer; A lower mirror stack formed in a mesa shape on a center lower surface of the n-type lower ohmic contact layer; An n-type ohmic metal electrode formed on a lower surface of the n-type lower ohmic contact layer and an upper edge of the n-type upper ohmic contact layer; An n-type ohmic metal electrode formed on the n-type upper ohmic contact layer and a conductive auxiliary plate attached to the upper mirror stack; And the n-type lower ohmic contact layer, the p-type lower clad layer, the active layer, the n-type upper clad layer, the n-type upper ohmic contact layer, and the tunnel junction layer are made of a nitride semiconductor.

According to an eleventh embodiment of the present invention, a nitride semiconductor vertical resonant surface emitting laser is provided; an n-type lower mirror stack, a p-type lower clad layer, an active layer, an n-type upper clad layer, and an n-type upper ohmic contact layer sequentially stacked on the n-type substrate; An n-type nitride semiconductor formed in a mesa shape on a central upper surface of the n-type lower mirror stack and buried by the p-type lower cladding layer and doped with an n-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ^-3 . A tunnel junction layer having a structure in which a layer and a p-type nitride semiconductor layer doped with a p-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ⁻³ are sequentially stacked; An upper mirror stack formed on a center upper surface of the n-type upper ohmic contact layer; An n-type upper ohmic metal electrode formed at an edge of the n-type upper ohmic contact layer; An n-type lower ohmic metal electrode formed on a rear surface of the n-type substrate; And the n-type substrate, the n-type lower mirror stack, the p-type lower clad layer, the active layer, the n-type upper clad layer, the n-type upper ohmic contact layer, and the tunnel junction layer are made of a nitride semiconductor.

According to the twelfth example of the present invention, a nitride semiconductor vertical resonance surface emitting laser is provided; an n-type lower mirror stack, a p-type lower clad layer, an active layer, an n-type upper clad layer, and an n-type upper mirror stack sequentially stacked on the n-type substrate; An n-type nitride semiconductor formed in a mesa shape on a central upper surface of the n-type lower mirror stack and buried by the p-type lower cladding layer and doped with an n-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ^-3 . A tunnel junction layer having a structure in which a layer and a p-type nitride semiconductor layer doped with a p-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ⁻³ are sequentially stacked; An n-type upper ohmic metal electrode formed at an edge of the n-type upper mirror stack; An n-type lower ohmic metal electrode formed on a rear surface of the n-type substrate; And an n-type substrate, an n-type lower mirror stack, a p-type lower clad layer, an active layer, an n-type upper clad layer, a tunnel junction layer, and an n-type upper mirror stack.

In each of the above examples, the thicknesses of the p-type nitride semiconductor layer and the n-type nitride semiconductor layer of the tunnel junction layer are preferably 10 to 1000 mW. In addition, a delta doping layer may be further interposed between the p-type nitride semiconductor layer and the n-type nitride semiconductor layer of the tunnel junction layer. The delta doped layer may be a Si delta doped layer formed by delta doping of Si, or may be a composite layer of an Mg delta doped layer formed by delta doping and a Si delta doped layer formed by delta doping of Si.

In the third, fourth, ninth, and tenth examples, the lower mirror stack may be made of a dielectric. In the first or seventh example, the lower mirror stack may be made of an epitaxial nitride semiconductor or a dielectric.

Hereinafter, with reference to the accompanying drawings, preferred embodiments of the present invention will be described in detail. In the drawings, like reference numerals denote components that perform the same function, and repeated descriptions thereof will be omitted.

Example 1

1 is a cross-sectional view illustrating a nitride semiconductor VCSEL according to a first embodiment of the present invention. Herein, nitride semiconductor refers to In _x Al _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, x + y ≦ 1), and the n-type nitride semiconductor is Si, O, Ge or Sn is doped, and p-type nitride semiconductor is doped with Mg, Zn, Cd or Be and the like.

Referring to FIG. 1, the lower mirror stack 20 and the lower ohmic contact layer 30 are sequentially stacked on the sapphire substrate 10. The substrate 10 may be made of SiC, GaN, Si, GaAs, ZnO, or MgO in addition to sapphire. The lower mirror stack 20 is epitaxially grown on the substrate 10. Typically, the mirror stack is constructed by alternately stacking layers having different refractive indices. In general, an epitaxially formed mirror stack is formed by alternately stacking an AlN layer and a GaN layer or an AlGaN layer. Generally 20 to 40 pairs of layers are required to achieve the desired reflectance.

The n-type lower ohmic contact layer 30 is formed of an n-type nitride semiconductor, which is usually formed of a GaN layer, and may also be formed of an AlGaN layer or an InGaN layer. The doping concentration of the n-type dopant of the n-type lower ohmic contact layer 30 may range from 5 × 10 ^{17 to} 1 × 10 ¹⁹ cm ⁻³ . If the n-type dopant is too heavily doped in the lower ohmic contact layer 30, the crystallinity becomes poor and the surface becomes rough, so that the characteristics of the active layer 50 formed on the n-type lower ohmic contact layer 30 deteriorate. Laser oscillation becomes difficult In addition, when the doping concentration is high, the concentration of electrons increases and the light loss due to electrons also increases. On the contrary, if the doping concentration of the n-type lower ohmic contact layer 30 is too low, the current injected from the ohmic contact metal electrode 100 may feel a large resistance.

The n-type lower clad layer 40, the active layer 50, the p-type upper clad layer 60, and the n-type upper ohmic contact layer 80 are sequentially stacked on the center upper surface of the n-type lower ohmic contact layer 30. It has a mesa structure. Here, the n-type lower clad layer 40 is made of an n-type nitride semiconductor, it may be composed of a single layer or multiple layers, it is usually formed of an Al _x Ga _1-x N (0 _{≤ x ≤} 0.5) layer. In addition, the p-type upper cladding layer 60 is formed of a p-type nitride semiconductor, and may be composed of a single layer or multiple layers, and is usually formed of an Al _x Ga _1-x N (0 ≦ x ≦ 0.5) layer. The n-type upper ohmic contact layer 80 is made of an n-type nitride semiconductor.

The active layer 50 is an area where electrons and holes injected from the n-type lower clad layer 40 and the p-type upper clad layer 60 meet and emit light. In addition, since the light emitted from the active layer 50 is amplified by the light reciprocating between the lower mirror stack 30 and the upper mirror stack 60, the active layer 50 also serves as a gain medium (gain medium).

The active layer 50 is formed of a nitride semiconductor, and has a double junction structure composed of InGaN / GaN, a single quantum well structure composed of GaN / InGaN / GaN, or GaN / InGaN / GaN /..../ It may have a multi-quantum well structure consisting of GaN / InGaN / GaN. Here, the GaN layer serves as a barrier layer, and the InGaN layer serves as a well layer. The barrier layer may be formed of an InGaN layer having an In composition ratio smaller than the In composition ratio of the well layer InGaN, or may be formed of an AlGaN layer or an InGaAlN layer. The emission wavelength of the active layer 50 may be adjusted to have a range of 350 to 550 nm while varying the In composition ratio or the thickness of the well layer.

A tunnel junction layer 70 is interposed between the p-type upper clad layer 60 and the n-type upper ohmic contact layer 80. The tunnel junction layer 70 is formed in a mesa shape on the center upper surface of the p-type upper clad layer 60 and has a buried structure buried by the n-type upper ohmic contact layer 80. A tunnel junction layer 70 is ^{5 × 10 18 ~ 1 × 10} 21 p-type the p-type dopant at a concentration of cm ^-3 doping the nitride semiconductor layer 72 ^{and, 5 × 10 18 ~ 1 ×} 10 21 cm -3 The n-type nitride semiconductor layer 74 doped with an n-type dopant at a concentration of is sequentially stacked.

The tunnel junction layer 70 is formed by sequentially depositing a p-type nitride semiconductor layer and an n-type nitride semiconductor layer on the entire surface of the sample, and then taking the sample out of the crystal growth apparatus and performing a standard lithography and mesa etching process. The mesa shape of the tunnel junction layer 70 may have a proper circular shape when viewed from above but may have a rectangular shape. If the mesa is circular, the diameter should be 2-50 μm in diameter. Since the tunnel junction layer 70 serves as a current injection hole, the size of the current injection hole of the VCSEL is determined by the size of the mesa. That is, the light emitting area of the VCSEL is determined.

Tunnel junction layer 70 should be as thin as possible and the doping concentration as high as possible. The higher the doping concentration, the thinner the depth layer of the depletion layer (depletion layer) at the pn tunnel junction interface (several to several tens of microns), the higher the tunneling probability, the better the current is injected through the tunnel junction region. On the other hand, when the doping concentration is about 5 × 10 ²¹ cm ^-3 or less, the thickness of the depletion layer is thick at the pn tunnel junction interface, so that the tunneling probability is very low, and thus no current is injected through the tunnel junction region.

On the other hand, if the thickness of the p-type nitride semiconductor layer 72 and the n-type nitride semiconductor layer 74 is too thick, cracks or crystallinity become worse, and in particular, due to the high doping amount, the loss of emitted light becomes high, resulting in laser oscillation. This becomes difficult. Therefore, it is preferable that the thickness of the p-type nitride semiconductor layer 72 and the n-type nitride semiconductor layer 74 is made to be 10 to 1000 kPa, respectively.

In addition, delta doping may be performed on the p-type nitride semiconductor layer 72 before the n-type nitride semiconductor layer 74 is formed to increase the doping concentration. The delta doping may be performed by doping an n-type dopant, or the delta doping may be performed by sequentially doping a p-type dopant and an n-type dopant.

An upper mirror stack 90 is formed in a mesa shape on a central upper surface of the n-type upper ohmic contact layer 80. The mesa shape of the upper mirror stack 90 is preferably the same as the mesa shape of the tunnel junction layer 70 serving as a current injection hole. In addition, it is preferable that the mesa position of the upper mirror stack 90 is directly above the tunnel junction layer 70. The upper mirror stack 90 is formed by depositing a dielectric. Representative dielectric mirror stacks used for the nitride semiconductor VCSEL include SiO ₂ / HfO ₂ , SiO ₂ / ZrO ₂ , and epitaxial AlGaN / GaN mirror stacks.

n-type lower ohmic contact with the n-type lower ohmic contact layer 30 and the n-type upper ohmic contact layer 80 at the upper edges of the n-type lower ohmic contact layer 30 and the n-type upper ohmic contact layer 80, respectively. The ohmic metal electrode 100 and the n-type upper ohmic metal electrode 110 are formed.

The n-type upper ohmic contact layer 80 forms a p-n junction with the p-type upper clad layer 60 and an n-n junction with the upper surface of the tunnel junction layer 70. Therefore, when a positive voltage is applied to the n-type upper ohmic metal electrode 110 and a negative voltage is applied to the n-type lower ohmic metal electrode 100, the n-type upper ohmic contact layer 80 and the p-type upper cladding are applied. Reverse bias is applied between the layers 60 and between the n-type nitride semiconductor layer 74 and the p-type nitride semiconductor layer 72 of the tunnel junction layer. At this time, the tunnel junction current flows in the tunnel junction layer 70 by reverse bias, but no current flows because tunneling does not occur between the n-type upper ohmic contact layer 80 and the p-type upper clad layer 60. As a result, the current is injected into the active layer 50 only through the tunnel junction layer 70.

In the n-type upper ohmic contact layer 80, the doping should be reduced so that tunneling does not occur between the n-type upper ohmic contact layer 80 and the p-type upper cladding layer 60. If the doping concentration is too low, n The current injected from the type upper ohmic metal electrode 110 to the n type upper ohmic contact layer 80 receives a lot of resistance, so that the current is not properly injected into the tunnel junction layer 70. Therefore, the electrical characteristics of the VCSEL are deteriorated. The suitable doping concentration of the n-type upper ohmic contact layer 80 is usually 1 × 10 ^{18 to} 5 × 10 ¹⁸ cm ^-3 , and may be 5 × 10 ^{17 to} 5 × 10 ¹⁹ cm ^-3 .

The n-type upper ohmic contact layer 80 may be composed of two or more layers. For example, a portion of the upper surface of the p-type upper cladding layer 60 and the upper surface of the tunnel junction layer 70 form an n-type nitride semiconductor less doped in the range of 1 × 10 ^{16 to} 1 × 10 ¹⁸ cm ^-3 . On the lightly doped n-type nitride semiconductor, a relatively heavily doped n-type nitride semiconductor in a range of 5 × 10 ^{17 to} 5 × 10 ¹⁹ cm ^{-3 is} used to improve ohmic contact characteristics of the n-type upper ohmic metal electrode 110. Can be formed. Since the doping concentration of the lower portion of the n-type upper ohmic contact layer 80 is low, the leakage current at the interface between the p-type upper clad layer 60 and the n-type upper ohmic contact layer 80 is reduced.

The introduction of the tunnel junction layer 70 allows the n-type upper ohmic contact layer 80 to be formed of an n-type nitride semiconductor having tens or thousands of times higher conductivity than a p-type nitride semiconductor. Accordingly, when the current is injected through the n-type ohmic metal electrodes 100 and 110, the current is evenly injected over the entire area of the tunnel junction layer 70 serving as the current injection hole.

Lower mirror stack 20, n-type lower ohmic contact layer 30, n-type lower cladding layer 40, active layer 50, p-type upper cladding layer 60, tunnel junction layer 70, n-type upper The thickness of the ohmic contact layer 80 and the upper mirror stack 90 is determined according to the light emission wavelength of the VCSEL. For example, in order for the VCSEL to emit light having a wavelength of 350-550 nm, each mirror layer constituting the mirror stack needs to have a light thickness equivalent to 1/4 of the laser emission wavelength.

The light emission principle of the nitride semiconductor VCSEL of FIG. 1 will be briefly described as follows. When reverse bias is applied to the tunnel junction layer 70 through the ohmic metal electrodes 100 and 110, electrons in the valence band of the p-type nitride semiconductor layer 72 are tunneled to the n-type nitride semiconductor layer 74. Done. Accordingly, electrons are formed in the p-type nitride semiconductor layer 72, that is, holes are formed, and the holes are injected into the active layer 50 through the p-type upper clad layer 60 by reverse bias. The holes injected into the active layer 40 are recombined with electrons supplied to the active layer 50 through the n-type lower ohmic contact layer 30, so that light is emitted from the active layer 50.

Example 2

2 is a cross-sectional view for describing a nitride semiconductor VCSEL according to a second embodiment of the present invention. 1, the n-type lower mirror stack 20 'is formed in a mesa shape on the upper surface of the n-type lower ohmic contact layer 30, and the n-type lower clad layer 40 is an n-type lower mirror stack. Is located on (20). That is, the positions of the n-type lower ohmic contact layer 30 and the n-type lower mirror stack 20 are changed.

Due to this structural difference, when a current is injected through the n-type lower ohmic metal electrode 100, the current is injected into the active layer 50 through the n-type lower mirror stack 20 ′. Accordingly, unlike FIG. 1, an n-type lower mirror stack 20 ′ doped with an n-type dopant is used so that the lower mirror stack has electrical conductivity. As a result, since the relatively high concentration of the doped n-type lower ohmic contact layer 30 is far from the active layer 50, the optical loss due to the doping of the n-type lower ohmic contact layer 30 is reduced.

Example 3

3 is a cross-sectional view for describing a nitride semiconductor VCSEL according to a third embodiment of the present invention. The difference from FIG. 1 is that the dielectric lower mirror stack 20 ″ is located on the back side of the substrate 10.

In general, epitaxially grown AlGaN / GaN mirror stacks are liable to crack due to lattice mismatch and difference in coefficient of thermal expansion between AlGaN and GaN constituting the mirror stack. In particular, it is very difficult to form an epitaxial nitride semiconductor mirror stack on a sapphire substrate with good crystallinity. This is because nitride semiconductor and sapphire have large lattice mismatch and large difference in coefficient of thermal expansion.

Therefore, it is preferable to use the dielectric lower mirror stack 20 "as the mirror stack. Since the lower mirror stack does not need to be conductive, it may be formed of a dielectric material in this manner. Dielectric lower mirror stack 20" The upper and lower ohmic contact layers 30 and 80, the upper and lower cladding layers 40 and 60, the active layer 50 and the tunnel junction layer 70 are grown into an epitaxial layer free from cracking, and then the dielectric is formed by electron beam or sputtering. By vapor deposition.

In general, since the sapphire used as the substrate 10 has a thickness of 100 μm or more, the distance between the active layer 50 and the dielectric lower mirror stack 20 ″ is large, resulting in a large diffraction loss of light. In order to reduce the thickness of the dielectric lower mirror stack 20 ″, the back side of the substrate 10 may be partially etched to form a microlens to collect light, and then a dielectric mirror stack may be applied to the surface of the microlens. It is preferable to deposit.

Example 4

4 is a cross-sectional view illustrating a nitride semiconductor VCSEL according to a fourth embodiment of the present invention.

Referring to FIG. 4, on the n-type lower ohmic contact layer 30, an n-type lower clad layer 40, an active layer 50, a p-type upper clad layer 60, and an n-type upper ohmic contact layer 80 are sequentially formed. Are stacked. A tunnel junction layer 70 is interposed between the p-type upper clad layer 60 and the n-type upper ohmic contact layer 80. The tunnel junction layer 70 is formed in a mesa shape on the central upper surface of the p-type upper clad layer 60 and has a buried structure buried by the upper ohmic contact layer 80. The upper mirror stack 90 and the dielectric lower mirror stack 20 " are mesa-shaped at the center upper surface of the n-type upper ohmic contact layer 80 and at the center lower surface of the n-type lower ohmic contact layer 30, respectively. Is formed.

n-type lower ohmic contact with the n-type lower ohmic contact layer 30 and the n-type upper ohmic contact layer 80, respectively, on the lower surface of the n-type lower ohmic contact layer 30 and the upper surface of the n-type upper ohmic contact layer 80. The ohmic metal electrode 100 and the n-type upper ohmic metal electrode 110 are formed.

4 does not have a substrate unlike the above-described embodiments. Specifically, the n-type lower ohmic contact layer, the n-type lower clad layer 40, the active layer 50, the p-type upper clad layer 60, the tunnel junction layer 70 and the n-type upper ohmic on the sapphire substrate The contact layer 80 is sequentially formed, the upper mirror stack 90 and the n-type upper ohmic metal electrode 110 are formed, and then the substrate is removed to form a lower surface of the n-type lower ohmic contact layer 30. A dielectric lower mirror stack 20 " and an n-type lower ohmic metal electrode 100 are formed.

The sapphire substrate can be removed by a laser lift-off method that scans from the back side of the substrate using an ultraviolet high power pulsed laser. Sapphire transmits the pulsed laser, whereas the bandgap energy of GaN grown on the sapphire substrate is smaller than the energy of the pulsed laser to absorb the laser light. Therefore, in the GaN near the sapphire substrate and the GaN interface, N is desorbed by a laser to form a layer containing a large amount of Ga metal. The Ga metal-rich layer can be selectively dissolved in chemicals. Since the lower surface of the lower ohmic contact layer 30 becomes rough while the substrate is removed, the lower surface of the lower ohmic contact layer 30 is subjected to lapping and polishing to smooth the surface to form the dielectric lower mirror stack 20 ″.

Since there is no substrate, the total thickness of the laminated thin film is too thin, a few μm, which is difficult to handle. Therefore, before removing the substrate used for epitaxially, the upper surfaces of the n-type upper ohmic metal electrode 110 and the upper mirror stack 90 are attached on a conductive auxiliary plate 10 " made of a material having good electrical conductivity such as copper. Invert the VCSEL structure to remove the substrate.

Since the sapphire used as a substrate is usually 100 μm or more in thickness, in FIG. 3, in order to reduce diffraction loss of light, before the dielectric lower mirror stack 20 ″ is formed, the back side of the substrate is partially etched to form microlenses to form light. Although the distance between the active layer 50 and the dielectric lower mirror stack 20 "is far, there is a limit in reducing diffraction loss. In addition, there is a difficulty in controlling the thickness of the substrate precisely to the optical thickness in order to maintain the reinforcement interference of the emission wavelength.

In the case of FIG. 4, by forming the dielectric lower mirror stack 20 ″ directly on the lower surface of the lower contact layer 30, such diffraction loss and difficulty in controlling thickness can be greatly reduced.

Example 5

5 is a cross-sectional view for describing a nitride semiconductor VCSEL according to a fifth embodiment of the present invention.

Referring to FIG. 5, the n-type lower mirror stack 20 ′, the n-type lower cladding layer 40, the active layer 50, the p-type upper cladding layer 60, and the n-type upper ohmic contact layer 80 are n. It is epitaxially grown on the mold substrate 10 'sequentially. Between the p-type upper cladding layer 60 and the n-type upper ohmic contact layer 80, the tunnel junction layer 70 is formed in the mesa shape on the center upper surface of the p-type upper cladding layer 60, the upper ohmic contact layer ( 80) buried structure (buried structure).

An upper mirror stack 90 is formed in a mesa shape on a central upper surface of the n-type upper ohmic contact layer 80. An n-type upper ohmic metal electrode 110 is formed at an upper edge of the n-type upper ohmic contact layer 80. The n-type lower ohmic metal electrode 100 is formed on the back surface of the n-type substrate 10 'to be in ohmic contact with the substrate 10. In this embodiment, the n-type lower ohmic contact layer 30 is not required.

When a current is injected through the n-type lower ohmic metal electrode 100, the current is injected into the active layer 50 through the n-type substrate 10 ′ and the n-type lower mirror stack 20 ′. For this reason, the n-type dopant is doped so that the substrate 10 'and the lower mirror stack 20' are conductive.

With the recent development of GaN substrates, GaN substrates doped with n-type dopants can be used as n-type substrates 10 '. Accordingly, according to FIG. 5, the ohmic electrode may be formed on the back side of the substrate as in the conventional GaAs-based VCSEL, thereby simplifying the process. Unlike the GaAs-based VCSEL, the upper ohmic contact layer 80 is made of an n-type nitride semiconductor like the n-type substrate 10 'due to the presence of the tunnel junction layer 70.

In particular, the use of GaN substrates reduces the likelihood of cracking epitaxially grown AlGaN / GaN mirrorstacks compared to using sapphire substrates. Therefore, the n-type nitride semiconductor mirror stack can be used as the n-type lower mirror stack 20.

Example 6

6 is a cross-sectional view illustrating a nitride semiconductor VCSEL according to a sixth embodiment of the present invention.

Referring to FIG. 6, unlike FIG. 5, the n-type upper mirror stack 90 ′ is not formed in the mesa shape, but the n-type auxiliary cladding layer 65 and the n-type upper layer on the p-type upper cladding layer 60. The mirror stack 90 is epitaxially grown sequentially, and the upper ohmic metal electrode 110 is formed on the n-type upper mirror stack 90 '. Another difference is that the n-type dopant is doped so that the upper mirror stack 90 'is conductive. This structure has the n-type lower mirror stack 20, the n-type lower cladding layer 40, the active layer 50, the p-type upper cladding layer 60, and the n-type auxiliary cladding layer except for the tunnel junction layer 70. The VCSEL manufacturing process is simplified because the 65 and n-type upper mirror stack 90 'can be epitaxially grown on the n-type substrate 10' sequentially.

In the case of FIG. 6, the n-type nitride semiconductor can be used as the n-type upper mirror stack 90 'due to the presence of the tunnel junction layer 70. In FIG. Since the p-type mirror stack has a high resistance due to the energy barrier at the AlGaN / GaN interface, current injection is almost impossible. In particular, p-type AlGaN having a high Al composition ratio is almost impossible to make a p-type mirror stack.

1 to 6, the tunnel junction layer 70 is positioned on the active layer 50, and the p-type nitride semiconductor layer 72 and the n-type nitride semiconductor layer 74 are sequentially stacked. As the p-type dopant, Mg is generally used. Due to the memory effect of the Mg source material during epitaxial growth, when the n-type GaN thin film is formed after the p-type GaN thin film is formed, the n-type GaN The electron concentration of the thin film is affected. In order to solve this problem, after the p-type nitride semiconductor layer 72 is formed, it is preferable to stop growth for a predetermined time of 1 second or more, and then to manufacture the n-type nitride semiconductor layer 74. However, since it is difficult to completely exclude the memory effect of the p-type dopant source, it is preferable to grow the n-type nitride semiconductor layer first and then grow the p-type nitride semiconductor layer to form a tunnel junction layer.

Therefore, in the following embodiment, various structures of the VCSEL are described in which the tunnel junction layer is formed under the lower cladding layer so that the tunnel junction layer has a structure in which p-type nitride semiconductor layers are sequentially stacked on the n-type nitride semiconductor layer. .

Example 7

7 is a cross-sectional view illustrating a nitride semiconductor VCSEL according to a seventh embodiment of the present invention. Compared with FIG. 1, the tunnel junction layer 70 'is formed on the n-type lower ohmic contact layer 30, and has a mesa structure buried by the p-type lower clad layer 40'. .

Example 8

8 is a cross-sectional view for describing a nitride semiconductor VCSEL according to an eighth embodiment of the present invention. 2, the tunnel junction layer 70 'is formed on the n-type lower mirror stack 20', and has a mesa structure buried by the p-type lower clad layer 40 '. .

Example 9

9 is a cross-sectional view for describing a nitride semiconductor VCSEL according to a ninth embodiment of the present invention. Compared with FIG. 3, the tunnel junction layer 70 'is formed on the n-type lower ohmic contact layer 30, and has a mesa structure that is buried by the p-type lower clad layer 40'. .

Example 10

10 is a cross-sectional view for describing a nitride semiconductor VCSEL according to a tenth embodiment of the present invention. Compared with FIG. 4, the tunnel junction layer 70 'is formed on the n-type lower ohmic contact layer 30, and has a mesa structure that is buried by the p-type lower clad layer 40'. .

Example 11

11 is a cross-sectional view for describing a nitride semiconductor VCSEL according to an eleventh embodiment of the present invention. 5, the tunnel junction layer 70 'is formed on the n-type lower mirror stack 20', and has a mesa structure buried by the p-type lower clad layer 40 '. .

Example 12

12 is a cross-sectional view for describing a nitride semiconductor VCSEL according to a twelfth embodiment of the present invention. 6, the tunnel junction layer 70 'is formed on the n-type lower mirror stack 20', and has a mesa structure buried by the p-type lower clad layer 40 '. . Therefore, the n-type auxiliary cladding layer 65 is also unnecessary.

7 to 12, the tunnel junction layer 70 ′ is formed of an n-type nitride semiconductor layer 74 and a p-type nitride semiconductor layer 72 because the tunnel junction layer is formed under the lower clad layer. This will have a stacked structure. The active layer 50 is not interposed between the n-type lower clad layer 40 and the p-type upper clad layer 60, but the p-type lower clad layer 40 'and the n-type upper clad layer 60'. It has a structure in which the active layer 50 is interposed therebetween.

According to the nitride semiconductor VCSEL according to the present invention as described above, both the upper and lower ohmic metal electrodes are n-type by introducing the tunnel junction layers 70 and 70 'of the mesa structure buried in the epitaxial nitride semiconductor layer as the current injection holes. It is possible to form the nitride semiconductor surface. Since the n-type nitride semiconductor has much higher electrical conductivity than the p-type nitride semiconductor, it is possible to inject a current uniformly over the entire area of the current inlet. That is, the introduction of the tunnel junction can induce a current spreading can solve the conventional problems.

The present invention is not limited to the above embodiments, and it is apparent that many modifications are possible by those skilled in the art within the technical spirit of the present invention.

Claims (19)

^{5 × 10 18 ~ 1 × 10} 21 cm -3 p-type dopant concentration of the doped p-type nitride semiconductor layer and a 5 × 10 ¹⁸ ~ 1 × 10 ²¹ cm ^-3 at a concentration of n-type dopant is doped n-type A nitride semiconductor vertical resonant surface emitting laser, characterized in that the nitride semiconductor layer comprises a current inlet consisting of a tunnel junction region bonded to each other. A lower mirror stack and an n-type lower ohmic contact layer sequentially stacked on the substrate; An n-type lower clad layer, an active layer, a p-type upper clad layer, and an n-type upper ohmic contact layer sequentially stacked on an upper surface of the center of the n-type lower ohmic contact layer to form a mesa structure; P-type doped with a p-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ^-3 formed in a mesa shape on the central upper surface of the p-type upper clad layer and buried by the n-type upper ohmic contact layer A tunnel junction layer having a structure in which a nitride semiconductor layer and an n-type nitride semiconductor layer doped with an n-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ⁻³ are sequentially stacked; An upper mirror stack formed on a center upper surface of the n-type upper ohmic contact layer; An n-type ohmic metal electrode formed on an edge of the n-type upper ohmic contact layer and an edge of the n-type lower ohmic contact layer, respectively; Including; And the n-type lower ohmic contact layer, the n-type lower clad layer, the active layer, the p-type upper clad layer, the n-type upper ohmic contact layer, and the tunnel junction layer are nitride semiconductors. An n-type lower ohmic contact layer formed on the substrate; An n-type lower mirror stack, an n-type lower clad layer, an active layer, a p-type upper clad layer, and an n-type upper ohmic contact layer sequentially stacked on a center upper surface of the n-type lower ohmic contact layer to form a mesa structure; P-type doped with a p-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ^-3 formed in a mesa shape on the central upper surface of the p-type upper clad layer and buried by the n-type upper ohmic contact layer A tunnel junction layer having a structure in which a nitride semiconductor layer and an n-type nitride semiconductor layer doped with an n-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ⁻³ are sequentially stacked; An upper mirror stack formed on a center upper surface of the n-type upper ohmic contact layer; An n-type ohmic metal electrode formed at edges of an upper surface of the n-type upper ohmic contact layer and the n-type lower ohmic contact layer, respectively; Including; The n-type lower ohmic contact layer, the n-type lower mirror stack, the n-type lower clad layer, the active layer, the p-type upper clad layer, the n-type upper ohmic contact layer, and the tunnel junction layer are made of a nitride semiconductor. Resonant surface emitting laser. An n-type lower ohmic contact layer formed on the substrate; An n-type lower clad layer, an active layer, a p-type upper clad layer, and an n-type upper ohmic contact layer sequentially stacked on an upper surface of the center of the n-type lower ohmic contact layer to form a mesa structure; P-type doped with a p-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ^-3 formed in a mesa shape on the central upper surface of the p-type upper clad layer and buried by the n-type upper ohmic contact layer A tunnel junction layer having a structure in which a nitride semiconductor layer and an n-type nitride semiconductor layer doped with an n-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ⁻³ are sequentially stacked; An upper mirror stack formed on a center upper surface of the n-type upper ohmic contact layer; An n-type ohmic metal electrode formed at edges of an upper surface of the n-type upper ohmic contact layer and the n-type lower ohmic contact layer, respectively; A lower mirror stack formed on a rear surface of the substrate; Including; And the n-type lower ohmic contact layer, the n-type lower clad layer, the active layer, the p-type upper clad layer, the n-type upper ohmic contact layer, and the tunnel junction layer are nitride semiconductors. an n-type lower clad layer, an active layer, a p-type upper clad layer, and an n-type upper ohmic contact layer sequentially stacked on the n-type lower ohmic contact layer; P-type doped with a p-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ^-3 formed in a mesa shape on the central upper surface of the p-type upper clad layer and buried by the n-type upper ohmic contact layer A tunnel junction layer having a structure in which a nitride semiconductor layer and an n-type nitride semiconductor layer doped with an n-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ⁻³ are sequentially stacked; An upper mirror stack formed in a mesa shape on a center upper surface of the n-type upper ohmic contact layer; A lower mirror stack formed in a mesa shape on a center lower surface of the n-type lower ohmic contact layer; An n-type ohmic metal electrode formed at an edge of an upper surface of the n-type upper ohmic contact layer and a lower surface of the n-type lower ohmic contact layer; An n-type ohmic metal electrode formed on the n-type upper ohmic contact layer and a conductive auxiliary plate attached to the upper mirror stack; Including; And the n-type lower ohmic contact layer, the n-type lower clad layer, the active layer, the p-type upper clad layer, the n-type upper ohmic contact layer, and the tunnel junction layer are nitride semiconductors. an n-type lower mirror stack, an n-type lower clad layer, an active layer, a p-type upper clad layer and an n-type upper ohmic contact layer sequentially stacked on the n-type substrate; P-type doped with a p-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ^-3 formed in a mesa shape on the central upper surface of the p-type upper clad layer and buried by the n-type upper ohmic contact layer A tunnel junction layer having a structure in which a nitride semiconductor layer and an n-type nitride semiconductor layer doped with an n-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ⁻³ are sequentially stacked; An upper mirror stack formed on a center upper surface of the n-type upper ohmic contact layer; An n-type upper ohmic metal electrode formed on an upper edge of the n-type upper ohmic contact layer; An n-type lower ohmic metal electrode formed on a rear surface of the n-type substrate; Including; The nitride semiconductor vertical resonance surface light emission of the n-type substrate, the n-type lower mirror stack, the n-type lower clad layer, the active layer, the p-type upper clad layer, the n-type upper ohmic contact layer and the tunnel junction layer made of a nitride semiconductor laser. an n-type lower mirror stack, an n-type lower clad layer, an active layer, a p-type upper clad layer, an n-type auxiliary clad layer, and an n-type upper mirror stack sequentially stacked on an n-type substrate; A p-type nitride formed in a mesa shape on a central upper surface of the p-type upper cladding layer and buried by the n-type auxiliary cladding layer and doped with a p-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ^-3 . A tunnel junction layer having a structure in which a semiconductor layer and an n-type nitride semiconductor layer doped with an n-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ⁻³ are sequentially stacked; An n-type upper ohmic metal electrode formed at an edge of the n-type upper mirror stack; An n-type lower ohmic metal electrode formed on a rear surface of the n-type substrate; Including; The n-type substrate, the n-type lower mirror stack, the n-type lower clad layer, the active layer, the p-type upper clad layer, the n-type auxiliary clad layer, the tunnel junction layer, and the n-type upper mirror stack are nitride semiconductors. Semiconductor Vertical Resonant Surface Emitting Laser. A lower mirror stack and an n-type lower ohmic contact layer sequentially stacked on the substrate; A p-type lower cladding layer, an active layer, an n-type upper cladding layer, and an n-type upper ohmic contact layer sequentially stacked on an upper surface of an n-type lower ohmic contact layer to form a mesa structure; The n-type lower ohmic contact layer is formed in a mesa shape and buried by the p-type lower cladding layer, and the n-type dopant is doped at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ^-3 . A tunnel junction layer having a structure in which a nitride semiconductor layer and a p-type nitride semiconductor layer doped with a p-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ⁻³ are sequentially stacked; An upper mirror stack formed on a center upper surface of the n-type upper ohmic contact layer; An n-type ohmic metal electrode formed at edges of an upper surface of the n-type upper ohmic contact layer and the n-type lower ohmic contact layer, respectively; Including; The n-type lower ohmic contact layer, the p-type lower cladding layer, the active layer, the n-type upper clad layer, the n-type upper ohmic contact layer and the tunnel junction layer is a nitride semiconductor vertical resonance surface light emitting laser. An n-type lower ohmic contact layer formed on the substrate; An n-type lower mirror stack, a p-type lower clad layer, an active layer, an n-type upper clad layer, and an n-type upper ohmic contact layer sequentially stacked on a center upper surface of the n-type lower ohmic contact layer to form a mesa structure; N-type nitride formed in a mesa shape on the center upper surface of the n-type lower mirror stack and buried by the p-type lower cladding layer and doped with an n-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ^-3 A tunnel junction layer having a structure in which a semiconductor layer and a p-type nitride semiconductor layer doped with a p-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ⁻³ are sequentially stacked; An upper mirror stack formed on a center upper surface of the n-type upper ohmic contact layer; An n-type ohmic metal electrode formed at edges of an upper surface of the n-type upper ohmic contact layer and the n-type lower ohmic contact layer, respectively; Including; The n-type lower ohmic contact layer, the n-type lower mirror stack, the p-type lower clad layer, the active layer, the n-type upper clad layer, the n-type upper ohmic contact layer, and the tunnel junction layer are formed of a nitride semiconductor. Resonant surface emitting laser. An n-type lower ohmic contact layer formed on the substrate; A p-type lower cladding layer, an active layer, an n-type upper cladding layer, and an n-type upper ohmic contact layer sequentially stacked on an upper surface of an n-type lower ohmic contact layer to form a mesa structure; The n-type lower ohmic contact layer is formed in a mesa shape and buried by the p-type lower cladding layer, and the n-type dopant is doped at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ^-3 . A tunnel junction layer having a structure in which a nitride semiconductor layer and a p-type nitride semiconductor layer doped with a p-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ⁻³ are sequentially stacked; An upper mirror stack formed on a center upper surface of the n-type upper ohmic contact layer; An n-type ohmic metal electrode formed at edges of an upper surface of the n-type upper ohmic contact layer and the n-type lower ohmic contact layer; A lower mirror stack formed on a rear surface of the substrate; Including; The n-type lower ohmic contact layer, the p-type lower cladding layer, the active layer, the n-type upper clad layer, the n-type upper ohmic contact layer and the tunnel junction layer is a nitride semiconductor vertical resonance surface light emitting laser. a p-type lower clad layer, an active layer, an n-type upper clad layer, and an n-type upper ohmic contact layer sequentially stacked on the n-type lower ohmic contact layer; An n-type nitride formed in a mesa shape on a central upper surface of the n-type lower ohmic contact layer and buried by the p-type lower clad layer and doped with an n-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ^-3 . A tunnel junction layer having a structure in which a semiconductor layer and a p-type nitride semiconductor layer doped with a p-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ⁻³ are sequentially stacked; An upper mirror stack formed in a mesa shape on a center upper surface of the n-type upper ohmic contact layer; A lower mirror stack formed in a mesa shape on a center lower surface of the n-type lower ohmic contact layer; An n-type ohmic metal electrode formed on a lower surface of the n-type lower ohmic contact layer and an upper edge of the n-type upper ohmic contact layer; An n-type ohmic metal electrode formed on the n-type upper ohmic contact layer and a conductive auxiliary plate attached to the upper mirror stack; Including; The n-type lower ohmic contact layer, the p-type lower cladding layer, the active layer, the n-type upper clad layer, the n-type upper ohmic contact layer and the tunnel junction layer is a nitride semiconductor vertical resonance surface light emitting laser. an n-type lower mirror stack, a p-type lower clad layer, an active layer, an n-type upper clad layer, and an n-type upper ohmic contact layer sequentially stacked on the n-type substrate; An n-type nitride semiconductor formed in a mesa shape on a central upper surface of the n-type lower mirror stack and buried by the p-type lower cladding layer and doped with an n-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ^-3 . A tunnel junction layer having a structure in which a layer and a p-type nitride semiconductor layer doped with a p-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ⁻³ are sequentially stacked; An upper mirror stack formed on a center upper surface of the n-type upper ohmic contact layer; An n-type upper ohmic metal electrode formed at an edge of the n-type upper ohmic contact layer; An n-type lower ohmic metal electrode formed on a rear surface of the n-type substrate; Including; The nitride semiconductor vertical resonance surface light emission of the n-type substrate, the n-type lower mirror stack, the p-type lower clad layer, the active layer, the n-type upper clad layer, the n-type upper ohmic contact layer and the tunnel junction layer made of a nitride semiconductor laser. an n-type lower mirror stack, a p-type lower clad layer, an active layer, an n-type upper clad layer, and an n-type upper mirror stack sequentially stacked on the n-type substrate; An n-type nitride semiconductor formed in a mesa shape on a central upper surface of the n-type lower mirror stack and buried by the p-type lower cladding layer and doped with an n-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ^-3 . A tunnel junction layer having a structure in which a layer and a p-type nitride semiconductor layer doped with a p-type dopant at a concentration of 5 × 10 ¹⁸ to 1 × 10 ²¹ cm ⁻³ are sequentially stacked; An n-type upper ohmic metal electrode formed at an edge of the n-type upper mirror stack; An n-type lower ohmic metal electrode formed on a rear surface of the n-type substrate; Including; A nitride semiconductor vertical resonance surface emitting laser, wherein the n-type substrate, n-type lower mirror stack, p-type lower clad layer, active layer, n-type upper clad layer, tunnel junction layer, and n-type upper mirror stack are made of nitride semiconductor. . The nitride semiconductor vertical resonant surface emitting laser according to any one of claims 1 to 13, wherein the thickness of the p-type nitride semiconductor layer and the n-type nitride semiconductor layer of the tunnel junction layer is 10 to 1000 microseconds, respectively. The nitride semiconductor resin resonance surface according to any one of claims 1 to 13, further comprising a delta doping layer interposed between the p-type nitride semiconductor layer and the n-type nitride semiconductor layer of the tunnel junction layer. Luminous laser. The nitride semiconductor vertical resonant surface emitting laser according to claim 4, 5, 10, or 11, wherein the lower mirror stack is made of a dielectric. The semiconductor device according to any one of claims 1 to 13, further comprising a Si delta doped layer interposed between the p-type nitride semiconductor layer and the n-type nitride semiconductor layer of the tunnel junction layer, wherein Si is delta-doped. A nitride semiconductor vertical resonance surface emitting laser. 14. The Mg delta doping layer and Si are delta doped in any one of claims 1 to 13, which are interposed between the p-type nitride semiconductor layer and the n-type nitride semiconductor layer of the tunnel junction layer and are formed by delta doping. A nitride semiconductor vertical resonant surface emitting laser further comprising a doped Si delta doping layer. The nitride semiconductor vertical resonant surface emitting laser according to claim 2 or 8, wherein the lower mirror stack is made of an epitaxial nitride semiconductor or a dielectric.