KR20020040875A - 다중 전극 스퍼터링 시스템에서 기판 바이어싱을 위한방법 및 장치 - Google Patents
다중 전극 스퍼터링 시스템에서 기판 바이어싱을 위한방법 및 장치 Download PDFInfo
- Publication number
- KR20020040875A KR20020040875A KR1020027004818A KR20027004818A KR20020040875A KR 20020040875 A KR20020040875 A KR 20020040875A KR 1020027004818 A KR1020027004818 A KR 1020027004818A KR 20027004818 A KR20027004818 A KR 20027004818A KR 20020040875 A KR20020040875 A KR 20020040875A
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- voltage
- chamber
- target
- secondary winding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 159
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 76
- 238000000034 method Methods 0.000 title claims abstract description 61
- 239000011810 insulating material Substances 0.000 claims abstract description 4
- 238000004804 winding Methods 0.000 claims description 42
- 230000008569 process Effects 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 20
- 238000012545 processing Methods 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 12
- 230000009471 action Effects 0.000 claims description 10
- 238000005513 bias potential Methods 0.000 claims description 5
- 230000003247 decreasing effect Effects 0.000 claims 10
- 230000003252 repetitive effect Effects 0.000 claims 1
- 230000009977 dual effect Effects 0.000 abstract description 30
- 150000002500 ions Chemical class 0.000 abstract description 27
- 238000010849 ion bombardment Methods 0.000 abstract description 6
- 239000004020 conductor Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 22
- 239000010410 layer Substances 0.000 description 10
- 230000008021 deposition Effects 0.000 description 9
- 239000012212 insulator Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 238000009413 insulation Methods 0.000 description 7
- 238000013459 approach Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000012423 maintenance Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000012774 insulation material Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 230000004224 protection Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 239000000615 nonconductor Substances 0.000 description 2
- 238000002294 plasma sputter deposition Methods 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000005328 architectural glass Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 230000004060 metabolic process Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/345—Applying energy to the substrate during sputtering using substrate bias
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/3442—Applying energy to the substrate during sputtering using an ion beam
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/548—Controlling the composition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
- H01J37/32706—Polarising the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3444—Associated circuits
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15989699P | 1999-10-15 | 1999-10-15 | |
| US60/159,896 | 1999-10-15 | ||
| PCT/US2000/028482 WO2001029278A1 (en) | 1999-10-15 | 2000-10-13 | Method and apparatus for substrate biasing in multiple electrode sputtering systems |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20020040875A true KR20020040875A (ko) | 2002-05-30 |
Family
ID=22574565
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020027004818A Withdrawn KR20020040875A (ko) | 1999-10-15 | 2000-10-13 | 다중 전극 스퍼터링 시스템에서 기판 바이어싱을 위한방법 및 장치 |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP1235947A4 (https=) |
| JP (1) | JP2003512526A (https=) |
| KR (1) | KR20020040875A (https=) |
| WO (1) | WO2001029278A1 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20220094933A (ko) * | 2020-12-29 | 2022-07-06 | 주식회사 더블유에스지 | 비접촉식 전해연마 공정을 포함하는 강관의 제조방법, 이로부터 제조되는 강관 |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6818103B1 (en) | 1999-10-15 | 2004-11-16 | Advanced Energy Industries, Inc. | Method and apparatus for substrate biasing in multiple electrode sputtering systems |
| US7179350B2 (en) | 2003-05-23 | 2007-02-20 | Tegal Corporation | Reactive sputtering of silicon nitride films by RF supported DC magnetron |
| US8808513B2 (en) | 2008-03-25 | 2014-08-19 | Oem Group, Inc | Stress adjustment in reactive sputtering |
| DE102008060838A1 (de) | 2008-12-05 | 2010-06-10 | Zounek, Alexis, Dr. | Beschichtungsverfahren, Vorrichtung zur Durchführung des Verfahrens |
| US8482375B2 (en) | 2009-05-24 | 2013-07-09 | Oem Group, Inc. | Sputter deposition of cermet resistor films with low temperature coefficient of resistance |
| RU2540318C2 (ru) * | 2013-03-18 | 2015-02-10 | Федеральное государственное унитарное предприятие "Научно-производственное предприятие "Исток" (ФГУП "НПП "Исток") | Устройство для ионно-плазменного травления и нанесения тонких пленок |
| RU2562568C2 (ru) * | 2013-06-18 | 2015-09-10 | Виталий Степанович Гончаров | Установка для вакуумного ионно-плазменного нанесения покрытий |
| KR102257134B1 (ko) | 2017-06-27 | 2021-05-26 | 캐논 아네르바 가부시키가이샤 | 플라스마 처리 장치 |
| JP6516950B1 (ja) * | 2017-06-27 | 2019-05-22 | キヤノンアネルバ株式会社 | プラズマ処理装置 |
| TWI745813B (zh) | 2017-06-27 | 2021-11-11 | 日商佳能安內華股份有限公司 | 電漿處理裝置 |
| SG11201912566WA (en) | 2017-06-27 | 2020-01-30 | Canon Anelva Corp | Plasma processing apparatus |
| EP3648551B1 (en) | 2017-06-27 | 2021-08-18 | Canon Anelva Corporation | Plasma treatment device |
| CN112292911A (zh) | 2018-06-26 | 2021-01-29 | 佳能安内华股份有限公司 | 等离子体处理装置、等离子体处理方法、程序和存储介质 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4693805A (en) * | 1986-02-14 | 1987-09-15 | Boe Limited | Method and apparatus for sputtering a dielectric target or for reactive sputtering |
| DE4042287C2 (de) * | 1990-12-31 | 1999-10-28 | Leybold Ag | Vorrichtung zum reaktiven Aufstäuben von elektrisch isolierendem Werkstoff |
| US5415757A (en) * | 1991-11-26 | 1995-05-16 | Leybold Aktiengesellschaft | Apparatus for coating a substrate with electrically nonconductive coatings |
| US5512164A (en) * | 1993-06-03 | 1996-04-30 | The United States Of America As Represented By The United States Department Of Energy | Method for sputtering with low frequency alternating current |
| US5882492A (en) * | 1996-06-21 | 1999-03-16 | Sierra Applied Sciences, Inc. | A.C. plasma processing system |
| US5897753A (en) * | 1997-05-28 | 1999-04-27 | Advanced Energy Industries, Inc. | Continuous deposition of insulating material using multiple anodes alternated between positive and negative voltages |
| ATE245717T1 (de) * | 1997-10-08 | 2003-08-15 | Cockerill Rech & Dev | Verfahren zum reinigen eines substrats und vorrichtung zur durchführung des verfahrens |
-
2000
- 2000-10-13 EP EP00970916A patent/EP1235947A4/en not_active Withdrawn
- 2000-10-13 WO PCT/US2000/028482 patent/WO2001029278A1/en not_active Ceased
- 2000-10-13 JP JP2001532257A patent/JP2003512526A/ja active Pending
- 2000-10-13 KR KR1020027004818A patent/KR20020040875A/ko not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20220094933A (ko) * | 2020-12-29 | 2022-07-06 | 주식회사 더블유에스지 | 비접촉식 전해연마 공정을 포함하는 강관의 제조방법, 이로부터 제조되는 강관 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1235947A1 (en) | 2002-09-04 |
| EP1235947A4 (en) | 2009-04-15 |
| WO2001029278A1 (en) | 2001-04-26 |
| JP2003512526A (ja) | 2003-04-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20020415 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |