JP2003512526A - 複数の電極のスパッタリングシステムにおいて基板にバイアスをかける方法および装置 - Google Patents

複数の電極のスパッタリングシステムにおいて基板にバイアスをかける方法および装置

Info

Publication number
JP2003512526A
JP2003512526A JP2001532257A JP2001532257A JP2003512526A JP 2003512526 A JP2003512526 A JP 2003512526A JP 2001532257 A JP2001532257 A JP 2001532257A JP 2001532257 A JP2001532257 A JP 2001532257A JP 2003512526 A JP2003512526 A JP 2003512526A
Authority
JP
Japan
Prior art keywords
substrate
sputtering
voltage
chamber
winding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001532257A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003512526A5 (https=
Inventor
リチャード エイ． スコール，
アブラハム ベルカインド，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Energy Industries Inc
Original Assignee
Advanced Energy Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Energy Industries Inc filed Critical Advanced Energy Industries Inc
Publication of JP2003512526A publication Critical patent/JP2003512526A/ja
Publication of JP2003512526A5 publication Critical patent/JP2003512526A5/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/3442—Applying energy to the substrate during sputtering using an ion beam
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/548—Controlling the composition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP2001532257A 1999-10-15 2000-10-13 複数の電極のスパッタリングシステムにおいて基板にバイアスをかける方法および装置 Pending JP2003512526A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15989699P 1999-10-15 1999-10-15
US60/159,896 1999-10-15
PCT/US2000/028482 WO2001029278A1 (en) 1999-10-15 2000-10-13 Method and apparatus for substrate biasing in multiple electrode sputtering systems

Publications (2)

Publication Number Publication Date
JP2003512526A true JP2003512526A (ja) 2003-04-02
JP2003512526A5 JP2003512526A5 (https=) 2007-11-22

Family

ID=22574565

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001532257A Pending JP2003512526A (ja) 1999-10-15 2000-10-13 複数の電極のスパッタリングシステムにおいて基板にバイアスをかける方法および装置

Country Status (4)

Country Link
EP (1) EP1235947A4 (https=)
JP (1) JP2003512526A (https=)
KR (1) KR20020040875A (https=)
WO (1) WO2001029278A1 (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019004190A1 (ja) * 2017-06-27 2019-01-03 キヤノンアネルバ株式会社 プラズマ処理装置
US11569070B2 (en) 2017-06-27 2023-01-31 Canon Anelva Corporation Plasma processing apparatus
US11600469B2 (en) 2017-06-27 2023-03-07 Canon Anelva Corporation Plasma processing apparatus
US11600466B2 (en) 2018-06-26 2023-03-07 Canon Anelva Corporation Plasma processing apparatus, plasma processing method, and memory medium
US11626270B2 (en) 2017-06-27 2023-04-11 Canon Anelva Corporation Plasma processing apparatus
US11961710B2 (en) 2017-06-27 2024-04-16 Canon Anelva Corporation Plasma processing apparatus

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6818103B1 (en) 1999-10-15 2004-11-16 Advanced Energy Industries, Inc. Method and apparatus for substrate biasing in multiple electrode sputtering systems
US7179350B2 (en) 2003-05-23 2007-02-20 Tegal Corporation Reactive sputtering of silicon nitride films by RF supported DC magnetron
US8808513B2 (en) 2008-03-25 2014-08-19 Oem Group, Inc Stress adjustment in reactive sputtering
DE102008060838A1 (de) 2008-12-05 2010-06-10 Zounek, Alexis, Dr. Beschichtungsverfahren, Vorrichtung zur Durchführung des Verfahrens
US8482375B2 (en) 2009-05-24 2013-07-09 Oem Group, Inc. Sputter deposition of cermet resistor films with low temperature coefficient of resistance
RU2540318C2 (ru) * 2013-03-18 2015-02-10 Федеральное государственное унитарное предприятие "Научно-производственное предприятие "Исток" (ФГУП "НПП "Исток") Устройство для ионно-плазменного травления и нанесения тонких пленок
RU2562568C2 (ru) * 2013-06-18 2015-09-10 Виталий Степанович Гончаров Установка для вакуумного ионно-плазменного нанесения покрытий
KR102512057B1 (ko) * 2020-12-29 2023-03-20 주식회사 더블유에스지 비접촉식 전해연마 공정을 포함하는 강관의 제조방법, 이로부터 제조되는 강관

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5082546A (en) * 1990-12-31 1992-01-21 Leybold Aktiengesellschaft Apparatus for the reactive coating of a substrate
US5512164A (en) * 1993-06-03 1996-04-30 The United States Of America As Represented By The United States Department Of Energy Method for sputtering with low frequency alternating current
WO1998054749A1 (en) * 1997-05-28 1998-12-03 Advanced Energy Industries, Inc. Continuous deposition of insulating material using multiple anodes alternated between positive and negative voltages

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4693805A (en) * 1986-02-14 1987-09-15 Boe Limited Method and apparatus for sputtering a dielectric target or for reactive sputtering
US5415757A (en) * 1991-11-26 1995-05-16 Leybold Aktiengesellschaft Apparatus for coating a substrate with electrically nonconductive coatings
US5882492A (en) * 1996-06-21 1999-03-16 Sierra Applied Sciences, Inc. A.C. plasma processing system
ATE245717T1 (de) * 1997-10-08 2003-08-15 Cockerill Rech & Dev Verfahren zum reinigen eines substrats und vorrichtung zur durchführung des verfahrens

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5082546A (en) * 1990-12-31 1992-01-21 Leybold Aktiengesellschaft Apparatus for the reactive coating of a substrate
US5512164A (en) * 1993-06-03 1996-04-30 The United States Of America As Represented By The United States Department Of Energy Method for sputtering with low frequency alternating current
WO1998054749A1 (en) * 1997-05-28 1998-12-03 Advanced Energy Industries, Inc. Continuous deposition of insulating material using multiple anodes alternated between positive and negative voltages
JP2002501577A (ja) * 1997-05-28 2002-01-15 アドバンスト エナジー インダストリーズ，インコーポレイテッド 交互に正電圧および負電圧にされる複数のアノードを用いる絶縁材料の連続堆積

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019004190A1 (ja) * 2017-06-27 2019-01-03 キヤノンアネルバ株式会社 プラズマ処理装置
JP6516950B1 (ja) * 2017-06-27 2019-05-22 キヤノンアネルバ株式会社 プラズマ処理装置
JP2019133929A (ja) * 2017-06-27 2019-08-08 キヤノンアネルバ株式会社 プラズマ処理装置
TWI690244B (zh) * 2017-06-27 2020-04-01 日商佳能安內華股份有限公司 電漿處理裝置
JP7202198B2 (ja) 2017-06-27 2023-01-11 キヤノンアネルバ株式会社 プラズマ処理装置
US11569070B2 (en) 2017-06-27 2023-01-31 Canon Anelva Corporation Plasma processing apparatus
US11600469B2 (en) 2017-06-27 2023-03-07 Canon Anelva Corporation Plasma processing apparatus
US11626270B2 (en) 2017-06-27 2023-04-11 Canon Anelva Corporation Plasma processing apparatus
US11756773B2 (en) 2017-06-27 2023-09-12 Canon Anelva Corporation Plasma processing apparatus
US11784030B2 (en) 2017-06-27 2023-10-10 Canon Anelva Corporation Plasma processing apparatus
US11961710B2 (en) 2017-06-27 2024-04-16 Canon Anelva Corporation Plasma processing apparatus
US11600466B2 (en) 2018-06-26 2023-03-07 Canon Anelva Corporation Plasma processing apparatus, plasma processing method, and memory medium

Also Published As

Publication number Publication date
EP1235947A1 (en) 2002-09-04
KR20020040875A (ko) 2002-05-30
EP1235947A4 (en) 2009-04-15
WO2001029278A1 (en) 2001-04-26

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