KR20020040875A - 다중 전극 스퍼터링 시스템에서 기판 바이어싱을 위한방법 및 장치 - Google Patents
다중 전극 스퍼터링 시스템에서 기판 바이어싱을 위한방법 및 장치 Download PDFInfo
- Publication number
- KR20020040875A KR20020040875A KR1020027004818A KR20027004818A KR20020040875A KR 20020040875 A KR20020040875 A KR 20020040875A KR 1020027004818 A KR1020027004818 A KR 1020027004818A KR 20027004818 A KR20027004818 A KR 20027004818A KR 20020040875 A KR20020040875 A KR 20020040875A
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- voltage
- chamber
- target
- secondary winding
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/345—Applying energy to the substrate during sputtering using substrate bias
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/3442—Applying energy to the substrate during sputtering using an ion beam
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/548—Controlling the composition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
- H01J37/32706—Polarising the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3444—Associated circuits
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15989699P | 1999-10-15 | 1999-10-15 | |
US60/159,896 | 1999-10-15 | ||
PCT/US2000/028482 WO2001029278A1 (en) | 1999-10-15 | 2000-10-13 | Method and apparatus for substrate biasing in multiple electrode sputtering systems |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20020040875A true KR20020040875A (ko) | 2002-05-30 |
Family
ID=22574565
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020027004818A KR20020040875A (ko) | 1999-10-15 | 2000-10-13 | 다중 전극 스퍼터링 시스템에서 기판 바이어싱을 위한방법 및 장치 |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1235947A4 (de) |
JP (1) | JP2003512526A (de) |
KR (1) | KR20020040875A (de) |
WO (1) | WO2001029278A1 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20220094933A (ko) * | 2020-12-29 | 2022-07-06 | 주식회사 더블유에스지 | 비접촉식 전해연마 공정을 포함하는 강관의 제조방법, 이로부터 제조되는 강관 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6818103B1 (en) | 1999-10-15 | 2004-11-16 | Advanced Energy Industries, Inc. | Method and apparatus for substrate biasing in multiple electrode sputtering systems |
US7179350B2 (en) | 2003-05-23 | 2007-02-20 | Tegal Corporation | Reactive sputtering of silicon nitride films by RF supported DC magnetron |
US8691057B2 (en) | 2008-03-25 | 2014-04-08 | Oem Group | Stress adjustment in reactive sputtering |
DE102008060838A1 (de) | 2008-12-05 | 2010-06-10 | Zounek, Alexis, Dr. | Beschichtungsverfahren, Vorrichtung zur Durchführung des Verfahrens |
US8482375B2 (en) | 2009-05-24 | 2013-07-09 | Oem Group, Inc. | Sputter deposition of cermet resistor films with low temperature coefficient of resistance |
RU2540318C2 (ru) * | 2013-03-18 | 2015-02-10 | Федеральное государственное унитарное предприятие "Научно-производственное предприятие "Исток" (ФГУП "НПП "Исток") | Устройство для ионно-плазменного травления и нанесения тонких пленок |
RU2562568C2 (ru) * | 2013-06-18 | 2015-09-10 | Виталий Степанович Гончаров | Установка для вакуумного ионно-плазменного нанесения покрытий |
CN110800379B (zh) | 2017-06-27 | 2022-01-18 | 佳能安内华股份有限公司 | 等离子体处理装置 |
WO2019003312A1 (ja) | 2017-06-27 | 2019-01-03 | キヤノンアネルバ株式会社 | プラズマ処理装置 |
CN110800376B (zh) | 2017-06-27 | 2022-04-01 | 佳能安内华股份有限公司 | 等离子体处理装置 |
EP4017223A1 (de) | 2017-06-27 | 2022-06-22 | Canon Anelva Corporation | Plasmaverarbeitungsvorrichtung |
TWI690244B (zh) * | 2017-06-27 | 2020-04-01 | 日商佳能安內華股份有限公司 | 電漿處理裝置 |
KR102439024B1 (ko) | 2018-06-26 | 2022-09-02 | 캐논 아네르바 가부시키가이샤 | 플라스마 처리 장치, 플라스마 처리 방법, 프로그램, 및 메모리 매체 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4693805A (en) * | 1986-02-14 | 1987-09-15 | Boe Limited | Method and apparatus for sputtering a dielectric target or for reactive sputtering |
DE4042287C2 (de) * | 1990-12-31 | 1999-10-28 | Leybold Ag | Vorrichtung zum reaktiven Aufstäuben von elektrisch isolierendem Werkstoff |
US5415757A (en) * | 1991-11-26 | 1995-05-16 | Leybold Aktiengesellschaft | Apparatus for coating a substrate with electrically nonconductive coatings |
US5512164A (en) * | 1993-06-03 | 1996-04-30 | The United States Of America As Represented By The United States Department Of Energy | Method for sputtering with low frequency alternating current |
US5882492A (en) * | 1996-06-21 | 1999-03-16 | Sierra Applied Sciences, Inc. | A.C. plasma processing system |
US5897753A (en) * | 1997-05-28 | 1999-04-27 | Advanced Energy Industries, Inc. | Continuous deposition of insulating material using multiple anodes alternated between positive and negative voltages |
ES2203748T3 (es) * | 1997-10-08 | 2004-04-16 | Recherche Et Developpement Du Groupe Cockerill Sambre, En Abrege: Rd-Cs | Procedimiento para el decapado de la superficie de un substrato e instalacion para la realizacion de este procedimiento. |
-
2000
- 2000-10-13 JP JP2001532257A patent/JP2003512526A/ja active Pending
- 2000-10-13 WO PCT/US2000/028482 patent/WO2001029278A1/en active Application Filing
- 2000-10-13 EP EP00970916A patent/EP1235947A4/de not_active Withdrawn
- 2000-10-13 KR KR1020027004818A patent/KR20020040875A/ko not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20220094933A (ko) * | 2020-12-29 | 2022-07-06 | 주식회사 더블유에스지 | 비접촉식 전해연마 공정을 포함하는 강관의 제조방법, 이로부터 제조되는 강관 |
Also Published As
Publication number | Publication date |
---|---|
JP2003512526A (ja) | 2003-04-02 |
WO2001029278A1 (en) | 2001-04-26 |
EP1235947A4 (de) | 2009-04-15 |
EP1235947A1 (de) | 2002-09-04 |
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WITN | Withdrawal due to no request for examination |