KR20020031075A - 시드층 보완조 - Google Patents

시드층 보완조 Download PDF

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Publication number
KR20020031075A
KR20020031075A KR1020010064675A KR20010064675A KR20020031075A KR 20020031075 A KR20020031075 A KR 20020031075A KR 1020010064675 A KR1020010064675 A KR 1020010064675A KR 20010064675 A KR20010064675 A KR 20010064675A KR 20020031075 A KR20020031075 A KR 20020031075A
Authority
KR
South Korea
Prior art keywords
copper
present
amount
copper ions
seed layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020010064675A
Other languages
English (en)
Korean (ko)
Inventor
메릭스데이비드
모리세이데니스
베이에스마틴더블유.
리페브레마크
셸넛제임스지.
스토조한도널드이.
Original Assignee
마티네즈 길러모
쉬플리 캄파니, 엘.엘.씨.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 마티네즈 길러모, 쉬플리 캄파니, 엘.엘.씨. filed Critical 마티네즈 길러모
Publication of KR20020031075A publication Critical patent/KR20020031075A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76868—Forming or treating discontinuous thin films, e.g. repair, enhancement or reinforcement of discontinuous thin films
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48—After-treatment of electroplated surfaces
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76874—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroless plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
    • H01L2221/1068—Formation and after-treatment of conductors
    • H01L2221/1073—Barrier, adhesion or liner layers
    • H01L2221/1084—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L2221/1089—Stacks of seed layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing the conductive pattern
    • H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemically Coating (AREA)
KR1020010064675A 2000-10-20 2001-10-19 시드층 보완조 Withdrawn KR20020031075A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US24223400P 2000-10-20 2000-10-20
US60/242,234 2000-10-20

Publications (1)

Publication Number Publication Date
KR20020031075A true KR20020031075A (ko) 2002-04-26

Family

ID=22913979

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020010064675A Withdrawn KR20020031075A (ko) 2000-10-20 2001-10-19 시드층 보완조

Country Status (4)

Country Link
US (1) US6660153B2 (enExample)
EP (1) EP1199383A3 (enExample)
JP (1) JP2002294483A (enExample)
KR (1) KR20020031075A (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6660154B2 (en) 2000-10-25 2003-12-09 Shipley Company, L.L.C. Seed layer
US6797146B2 (en) * 2000-11-02 2004-09-28 Shipley Company, L.L.C. Seed layer repair
US7316772B2 (en) * 2002-03-05 2008-01-08 Enthone Inc. Defect reduction in electrodeposited copper for semiconductor applications
US8002962B2 (en) 2002-03-05 2011-08-23 Enthone Inc. Copper electrodeposition in microelectronics
US6676823B1 (en) * 2002-03-18 2004-01-13 Taskem, Inc. High speed acid copper plating
US6858124B2 (en) * 2002-12-16 2005-02-22 3M Innovative Properties Company Methods for polishing and/or cleaning copper interconnects and/or film and compositions therefor
US7429401B2 (en) 2003-05-23 2008-09-30 The United States of America as represented by the Secretary of Commerce, the National Insitiute of Standards & Technology Superconformal metal deposition using derivatized substrates
CN1326216C (zh) * 2003-12-30 2007-07-11 中芯国际集成电路制造(上海)有限公司 一种避免漩涡效应缺陷的方法
TWI400365B (zh) * 2004-11-12 2013-07-01 Enthone 微電子裝置上的銅電沈積
TWI341554B (en) * 2007-08-02 2011-05-01 Enthone Copper metallization of through silicon via
US7905994B2 (en) 2007-10-03 2011-03-15 Moses Lake Industries, Inc. Substrate holder and electroplating system
US8262894B2 (en) 2009-04-30 2012-09-11 Moses Lake Industries, Inc. High speed copper plating bath
US9714474B2 (en) 2010-04-06 2017-07-25 Tel Nexx, Inc. Seed layer deposition in microscale features
WO2012150736A1 (ko) * 2011-05-03 2012-11-08 주식회사 디지아이 레이저 직접 구조화용 조성물 및 이를 이용한 레이저 직접 구조화 방법
KR102041646B1 (ko) * 2014-05-13 2019-11-07 삼성전기주식회사 전극 구조체

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3841979A (en) * 1971-08-20 1974-10-15 M & T Chemicals Inc Method of preparing surfaces for electroplating
US5004525A (en) * 1988-08-23 1991-04-02 Shipley Company Inc. Copper electroplating composition
US5051154A (en) * 1988-08-23 1991-09-24 Shipley Company Inc. Additive for acid-copper electroplating baths to increase throwing power
US4897165A (en) * 1988-08-23 1990-01-30 Shipley Company Inc. Electroplating composition and process for plating through holes in printed circuit boards
US5328589A (en) * 1992-12-23 1994-07-12 Enthone-Omi, Inc. Functional fluid additives for acid copper electroplating baths
TW593731B (en) * 1998-03-20 2004-06-21 Semitool Inc Apparatus for applying a metal structure to a workpiece
KR100656581B1 (ko) * 1998-09-03 2006-12-12 가부시키가이샤 에바라 세이사꾸쇼 기판의 도금방법 및 장치
EP1111096A3 (en) * 1999-12-15 2004-02-11 Shipley Company LLC Seed layer repair method
US6354916B1 (en) * 2000-02-11 2002-03-12 Nu Tool Inc. Modified plating solution for plating and planarization and process utilizing same
DE60123189T2 (de) * 2000-10-13 2007-10-11 Shipley Co., L.L.C., Marlborough Keimschichtreparatur und Elektroplattierungsbad

Also Published As

Publication number Publication date
EP1199383A2 (en) 2002-04-24
EP1199383A3 (en) 2004-02-11
JP2002294483A (ja) 2002-10-09
US20020088713A1 (en) 2002-07-11
US6660153B2 (en) 2003-12-09

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Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20011019

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid