KR20020027829A - Large Area Magnetron Sputtering Apparatus With Function of Reducing Particle and Magnetron Sputtering Method Using The Same - Google Patents

Abstract

PURPOSE: A large area magnetron sputtering apparatus having a particle reducing function is provided to minimize particles dropped to a substrate, by performing an embossing treatment regarding the surface of a clamp ring and by installing a heater for heating a shielder and a cooling line for cooling the clamp ring. CONSTITUTION: The substrate(6) is settled on a susceptor(7) while the susceptor is in a horizontal state, capable of rotating to erect the substrate in a deposition process. A target(1) confronts the substrate while the target is erect, including a material to deposit on the substrate. A back plate(2) supports the target, applying a direct current(DC) voltage to the target. A magnet(4) supplies a magnetic field to a discharge region between the substrate and the target, moving along a deposition region of the substrate in depositing the substrate. An initial transfer position and a transfer end position of the magnet are established outside an effective deposition region of the substrate.

Description

Large Area Magnetron Sputtering Apparatus With Function of Reducing Particle and Magnetron Sputtering Method Using The Same}

The present invention relates to a magnetron sputtering apparatus and method for forming a thin film on a large area substrate, and more particularly, to a large area magnetron sputtering apparatus and a magnetron sputtering method using the same to minimize particles falling on the substrate.

Recently, development of flat panel displays (FPDs), such as liquid crystal displays (LCDs), field emission displays (FEDs), plasma display panels (PDPs), It's accelerating. In addition, the memory field has continued to develop ultra-fine and large-capacity due to the development of semiconductor processes.

BACKGROUND OF THE INVENTION A manufacturing process of a flat panel display or a memory involves a metal wiring or an electrode deposition process. For example, a transparent conductive electrode material such as indium tin oxide (ITO) is deposited on a substrate using a magnetron sputtering device.

As shown in FIG. 1, the magnetron sputtering apparatus includes a susceptor 27 on which the substrate 26 is mounted, and a clamp ring 25 for fixing the substrate 26 on the susceptor 27. ), A lift pin plate 28 provided below the susceptor 27, a target 21 installed on the upper portion of the vacuum chamber, and a back plate to which the target 21 is attached. Plate) 22 and a magnet 24 provided above the back plate 22 are provided.

The operation of the magnetron sputtering device will be described below. First, after opening the valves 31a and 31b, the vacuum chamber is evacuated to 10 ^-2 Torr using a Booster / Dry Pump 32 and a Cryo Pump 30 is used. To evacuate the vacuum chamber to a minimum achieved vacuum degree, for example <10 ^-7 Torr. In this state of reaching the lowest vacuum state, the lift pin plate 28 rises vertically when the substrate 26 is loaded into the vacuum chamber by a robot (not shown). The substrate 26 is seated on the susceptor 27 by the lift pin plate 28. Subsequently, an inert gas such as argon (Ar), which is used as a sputtering gas, is introduced into the vacuum chamber and adjusted to a pressure suitable for the process. When the direct current voltage is applied to the back plate 22, the plasma discharge occurs in the vacuum chamber and the magnet 24 is moved. By this plasma discharge, the inert gas is ionized, and the ionized gas is accelerated toward the target 21 of the material to be deposited. The ionized particles then strike the target, whereby target atoms are released. The released atoms diffuse toward the substrate and are deposited on the substrate. At this time, since the ionized particles are uniformly sputtered on the entire surface of the target 21 by the movement of the magnet 24, the thin film is deposited on the substrate 26 with a uniform thickness. When a thin film having an appropriate thickness is formed on the substrate 26 as described above, the plasma discharge is turned off after the position of the magnet 24 returns to the initial position. After the plasma off, the susceptor 27 is vertically lowered and the lift pin plate 28 is raised, and then the substrate 26 is unloaded out of the vacuum chamber by the robot. Meanwhile, the air pressure in the vacuum chamber is measured by a Convectron Gauge 29a, an Ion Gauge 29b, and a capacitance diaphragm gage (not shown). The Conbacktron gauge 29a measures the vacuum in the vacuum chamber from atmospheric pressure to approximately 10 ^-3 Torr, and the ion gauge 29b can measure the vacuum in the vacuum chamber from approximately 10 ^-3 to 10 ^-9 Torr. The capacitance diaphragm gauge is used for the purpose of accurately measuring the pressure between the convextron gauge 29a and the ion gauge 29b by using the pressure difference applied to the diaphragm.

On the other hand, particles are generated as the voltage rises at the start of the plasma discharge and the residual charged particles at the end of the discharge are concentrated to a place where the potential difference is low. The particles thus generated are initiated or turned off by plasma discharge on the portion 33 where the substrate 26 is exposed, so that negatively charged particles fall on the substrate 26 at this portion 33. Particles adsorbed on the substrate 26 may cause short circuits or defects between the wirings patterned on the substrate 26. In addition, the sparkle is also caused by other causes. This will be described in detail as follows.

The thin film deposited on the clamp ring 25 has a weak bonding force because the surface of the clamp ring 25 is smooth and its surface area is small. The thin film on the clamp ring 25 is separated by vortices of charged particles generated by external vibration, mechanical shock or plasma discharge transmitted to the vacuum chamber. Accordingly, particles are generated while the thin film deposited on the clamp ring 25 falls on the substrate 26.

A thin film is deposited as the process proceeds to a shield 34 provided on the side of the target 21. Since the thin film deposited on the shield 34 has a weak adhesive force, the thin film deposited on the shield 34 falls to the substrate 26 by its own weight to act as a particle.

In addition, since the substrate 26 and the target 21 are installed horizontally in the vacuum chamber, large or small particles generated during the process fall on the substrate 26 by gravity and self-weight to act as particles.

Accordingly, an object of the present invention is to provide a large-area magnetron sputtering device and a magnetron sputtering method using the same to minimize particles falling on a substrate.

1 is a cross-sectional view schematically showing a conventional magnetron sputtering device.

2 is a cross-sectional view showing a magnetron sputtering apparatus according to an embodiment of the present invention.

3 is an enlarged cross-sectional view of the surface of the clamp ring shown in FIG.

<Description of Symbols for Main Parts of Drawings>

1,21: target 2,22; Back plate

3,15,23 Cooling line 4,24 Magnet

5,25: clamping ring 6,26: substrate

7,27: susceptor 8,28: lift pin plate

9a, 9b, 9c, 29a, 29b: gauge 10, 12, 30, 32: pump

11a, 11b, 11c, 31a, 31b: valve 13: heater

14: shield 16: rotation axis of the motor

In order to achieve the above object, the large-area magnetron sputtering apparatus according to the present invention includes a susceptor that is pivotally installed so that the substrate is seated in a horizontal state and the substrate is erected upon deposition, and a material to be deposited on the substrate The magnetic field is supplied to a target facing the substrate in an upright position, a back plate for supporting the target and applying a DC voltage on the target, and a discharge region between the substrate and the target while moving along the deposition region of the substrate when the substrate is deposited. And a magnet in which the initial and end positions are set out of the effective deposition area of the substrate.

The magnetron sputtering method according to the present invention includes the steps of evacuating a vacuum chamber until a predetermined vacuum state is reached, and loading a substrate into the vacuum chamber and susceptor for supporting the substrate with the substrate to face the substrate and the target; Injecting an inert gas into the vacuum chamber, supplying a DC voltage between the back plate and the susceptor in contact with the target to cause a discharge, and discharging the outside of the substrate so that the discharge is turned on and off. Generating a magnetic field in the discharge space while moving the magnet from the outside to the effective deposition region of the substrate and returning the magnet to the initial position after the discharge is turned off; Heating and using the temperature difference after the discharge of the particles generated in the discharge space is completed And a step of cooling the clamp ring so as to feed into the clamp ring for securing the susceptor to the plate.

Other objects and features of the present invention in addition to the above object will become apparent from the description of the embodiments with reference to the accompanying drawings.

Hereinafter, exemplary embodiments of the present invention will be described with reference to FIGS. 2 and 3.

Referring to FIG. 2, the magnetron sputtering apparatus according to the present invention includes a susceptor 7 on which the substrate 6 is seated and pivotally installed, and a clamp for fixing the substrate 6 on the susceptor 7. A ring 25, a cooling line 15 provided on the lower surface side of the clamp ring 5, a heater 13 provided on the rear side of the shield 14, and a lift provided on the lower side of the susceptor 7 The pin plate 8, the target 1 erected at a predetermined inclination angle in the vacuum chamber, the back plate 2 to which the target 1 is attached, and the magnet 4 provided above the back plate 2 are Equipped. The susceptor 7 is fastened in a hinged form to the rotating shaft 16 of the motor to rotate at a predetermined inclination angle when the substrate is seated and deposited by driving the motor. The clamp ring 5 serves to squeeze and fix the substrate 6 onto the susceptor 7 when the susceptor 7 on which the substrate 6 is seated is erected, that is, during deposition. The clamp ring 5 is bead blasted so that its surface is embossed as shown in FIG. 3. Since the surface area of the clamp ring 5 is enlarged by this embossing, the adhesive force between the clamp ring 5 and the thin film deposited thereon is increased during deposition, thereby preventing particles from falling from the surface of the clamp ring 5. Can be. Cooling water is continuously supplied to the cooling line 15 provided on the lower surface side of the clamp ring 5. Due to the cooling effect by the cooling line 15, a temperature difference occurs between the deposition space between the target 1 and the substrate 6 and the clamp region where the clamp ring 5 is located, during or after the plasma discharge. As a result, particles existing between the target 1 and the substrate 6 are moved toward the clamp region without falling toward the substrate 6. The heater 13 installed at the rear of the shield 14 heats the surface temperature of the shield 14 about 100 to 300 ° C. during deposition so that particles do not fall from the surface of the shield 14 toward the substrate 6. 14) to improve the adhesion of the thin film deposited on the surface. The cooling line 3 is installed in the back plate 2. This cooling line 3 is used for the purpose of lowering the temperature of the target 1.

In addition, the magnetron sputtering apparatus according to the present invention is installed on the exhaust pipe of the vacuum chamber, the valves (11a, 11b) for opening and closing the flow path in the exhaust pipe, the valve (11c) for regulating the pressure in the exhaust pipe, exhaust to the desired degree of vacuum A clinic pump 10 and a booster / dry pump 12, and a convective gauge 9a, an ion gauge 9b, and a capacitance diaphragm gauge 9c for indicating the air pressure in the vacuum chamber are provided.

Referring to the operation of the magnetron sputtering apparatus according to the present invention. First, after opening the valves 11a and 11b, the evacuation chamber is evacuated to 10 ⁻² Torr using the booster / dry pump 12 and the lowest achieved vacuum degree, eg, <10 ⁻⁷ using the cryo pump 10. Exhaust the vacuum chamber to Torr. In this state of reaching the lowest vacuum state, the lift pin plate 8 rises vertically when the substrate 6 is loaded into the vacuum chamber by a robot (not shown). The lift pin plate 8 allows the substrate 6 to be seated on the susceptor 7. At this time, the susceptor 7 maintains a horizontal state. Subsequently, while the motor is driven, the susceptor 7 on which the substrate 6 is seated is interlocked with the rotational shaft 16 of the motor to rotate clockwise. The susceptor 7 and the substrate 6 are then erected at an inclination angle of approximately 75 to 88 °, and the substrate 6 faces the target 1. Here, the inclination angles of the substrate 6 and the susceptor 7 are determined by the contact between the substrate 6 and the susceptor 7 when the substrate 6 and the susceptor 7 are vertical, i.e., set to 90 °. This is because defects tend to occur, and thus, the temperature uniformity of the substrate 6 is lowered, so that uniformity of the thin film is reduced during deposition. In addition, when the substrate 6 and the susceptor 7 stand up, large or small particles generated during deposition do not fall toward the substrate 6 but fall toward the clamp ring 5 and the shield 14. With the substrate 6 and the susceptor 7 standing up, an inert gas such as argon (Ar), which is used as a sputtering gas, flows into the vacuum chamber and the pressure in the vacuum chamber using the valve 11c is suitable for the process. Is adjusted. When the direct current voltage is applied to the back plate 2, the plasma discharge occurs in the vacuum chamber and the magnet 4 is moved. Here, the magnet 4 starts at the outer side of the substrate 6 and returns to its initial position, that is, the original position, at the end of the deposition as shown in the figure. In other words, the starting position and the ending position of the magnet 24 are used to prevent particles from being generated while the voltage rises at the start of the plasma discharge and the residual charged particles at the end of the discharge are concentrated at a low potential difference. 6) is determined on the outside. Thus, a plasma discharge is generated between the substrate 6 and the target 1 by the DC voltage applied between the back plate 2 and the susceptor 7 and the magnetic field generated from the magnet 4, and is inactive by the discharge. The gas is ionized. The ionized gas is accelerated toward the target 1 of the material to be deposited, and the target atoms are deposited on the surface of the substrate 6 in the effective magnetic field region by the collision of the ionized particles with the target 1. At this time, since the ionized particles are uniformly sputtered on the front surface of the target 1 by the movement of the magnet 4, a thin film is deposited on the substrate 6 with a uniform thickness. When a thin film having an appropriate thickness is formed on the substrate 6, the plasma discharge is turned off after the position of the magnet 4 returns to the initial position, that is, the outside of the substrate 6. After the plasma is turned off, the substrate 6 and the susceptor 7 are rotated counterclockwise to return to the horizontal state. Finally, the lift pin plate 8 is raised to separate the substrate 6 and the susceptor 7, and then the arm of the robot enters the vacuum chamber to unload the substrate 6 out of the vacuum chamber. .

As described above, the large-area magnetron sputtering apparatus according to the present invention and the magnetron sputtering method using the same allow the substrate 6 and the target 1 to face each other during deposition and set the initial position and the end position of the magnet 4 in a standing state. Set to the outside of the substrate. In addition, the large-area magnetron sputtering apparatus according to the present invention and the magnetron sputtering method using the same emboss the surface of the clamp ring 5 and cool the heater 13 and the clamp ring 5 for heating the shield 14. It will install a cooling line. By such a configuration, the large-area magnetron sputtering apparatus and the magnetron sputtering method using the same according to the present invention can minimize particles falling on the substrate 6.

Those skilled in the art will appreciate that various changes and modifications can be made without departing from the technical spirit of the present invention. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification but should be defined by the claims.

Claims (9)

A susceptor that is pivotally mounted so that the substrate is seated in a horizontal state and the substrate is raised during deposition; A target including the material to be deposited on the substrate and facing the substrate in a standing state; A back plate for supporting the target and for applying a DC voltage on the target; When the deposition of the substrate is moved along the deposition region of the substrate to supply a magnetic field to the discharge region between the substrate and the target and having a magnet whose initial movement position and end position is set out of the effective deposition region of the substrate A large-area magnetron sputtering device having a particle reduction function having a particle reduction function. The method of claim 1, A clamping ring for fixing the substrate onto the susceptor upon deposition of the substrate; A cooler for supplying coolant to cool the clamp ring, A shield forming a sidewall in a discharge region between the substrate and the target; A large area magnetron sputtering apparatus having a particle reduction function having a particle reduction function, further comprising a heater for heating the shield. The method of claim 1, The large-area magnetron sputtering apparatus having a particle reduction function having a particle reduction function, characterized in that the inclination angle when the substrate and the susceptor stand up during deposition of the substrate is approximately 75 ~ 88 °. The method of claim 2, The heater is a large-area magnetron sputtering device having a particle reduction function having a particle reduction function, characterized in that for heating the temperature of the shield to about 100 ~ 300 ℃. The method of claim 2, The clamping ring has a large area magnetron sputtering apparatus having a particle reduction function, characterized in that the surface is embossed. Exhausting the vacuum chamber until reaching a predetermined vacuum state, Loading a substrate into the vacuum chamber and susceptor supporting the substrate with the substrate to face the substrate and the target; Injecting an inert gas into the vacuum chamber; Supplying a DC voltage between the back plate in contact with the target and the susceptor to cause discharge; A magnetic field is generated in the discharge space while the magnet is moved from the outside of the substrate to the effective deposition region of the substrate so that the discharge is turned on and off at the outside of the substrate and the magnet is discharged after the discharge is turned off. Returning to the initial position, Heating a shield, which forms a sidewall in the discharge space, at a predetermined temperature during deposition of the substrate; Magnetron sputtering, comprising: cooling the clamping ring to transfer particles generated in the discharge space to the clamping ring for fixing the substrate on the susceptor using the temperature difference; Way. The method of claim 6, And the inclination angle when the substrate and the susceptor stand when the substrate is deposited is approximately 75 to 88 °. The method of claim 6, And the heater heats the temperature of the shield to approximately 100 to 300 [deg.] C. The method of claim 6, The clamp ring is a magnetron sputtering method, characterized in that the surface is embossed.