CN114086124A - Wafer PVD (physical vapor deposition) deposition processing method and system - Google Patents
Wafer PVD (physical vapor deposition) deposition processing method and system Download PDFInfo
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- CN114086124A CN114086124A CN202111435286.2A CN202111435286A CN114086124A CN 114086124 A CN114086124 A CN 114086124A CN 202111435286 A CN202111435286 A CN 202111435286A CN 114086124 A CN114086124 A CN 114086124A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
Abstract
The invention relates to the technical field of PVD (physical vapor deposition) precipitation processing, in particular to a wafer PVD precipitation processing method and system. The method comprises the following steps: transferring the wafer of the loading station to a processing station, and limiting the edge of the wafer in a positioning ring; heating the wafer and carrying out gas phase precipitation; after a preset processing time period, stopping heating and gas phase precipitation of the wafer, and transferring the wafer from the processing station to the feeding station so as to enable the wafer to be separated from contact with the positioning ring; and repeating the steps until the PVD deposition processing of the wafer is completed. The invention also correspondingly discloses a wafer PVD (physical vapor deposition) processing system. According to the wafer PVD (physical vapor deposition) deposition processing method and system, the wafer edge can be effectively prevented from being adhered to the positioning ring, so that the effect of wafer PVD deposition processing can be improved.
Description
Technical Field
The invention relates to the technical field of PVD (physical vapor deposition) precipitation processing, in particular to a wafer PVD precipitation processing method and system.
Background
The PVD (Physical Vapor Deposition) technique is a technique of vaporizing the surface of a material source (solid or liquid) into gaseous atoms, molecules or partially ionized into ions by a Physical method under vacuum, and depositing a thin film with a specific function on the surface of a substrate by a low-pressure gas (or plasma) process.
To solve the problem of wafer PVD deposition processing, a Chinese patent with publication number CN113430492B discloses a PVD coating device, which comprises: the device comprises a cavity, a sputtering unit, a base, a bearing device, a deformation sensor and an edge thimble device; the sputtering unit is positioned at the upper part of the cavity; the base and the bearing device are positioned in the cavity, the bearing device comprises a bearing piece and a lifting mechanism, the bearing piece is positioned at the periphery of the base, and the lifting mechanism is connected with the bearing piece; the deformation sensor is positioned on the inner wall of the cavity, and one end of the deformation sensor is electrically connected with the control unit; the two edge thimble devices are respectively electrically connected with the control unit and used for jacking the coated wafer according to the deformation signal of the wafer received by the control unit.
According to the PVD coating equipment in the existing scheme, the edge convex ring is arranged, so that the wafer is only in contact with the positioning circular ring through the edge, and scratches and wafer fragments on the front surface of the wafer are reduced. During the PVD deposition process of the wafer, most of the film material is transferred and deposited on the wafer, but a small amount of the film material is deposited on the positioning ring for stabilizing the edge of the wafer. However, as the deposition thickness is accumulated continuously, the edge of the wafer is easily adhered to the positioning ring, so that after the deposition processing is completed, the wafer is difficult to detach from the positioning ring, and the wafer is easily broken in the detaching process, which results in poor effect of the PVD deposition processing. Therefore, how to design a PVD deposition processing method for a wafer capable of effectively preventing the wafer edge from adhering to the positioning ring is a technical problem that needs to be solved urgently.
Disclosure of Invention
Aiming at the defects of the prior art, the technical problems to be solved by the invention are as follows: how to provide a wafer PVD deposition processing method which can effectively avoid the adhesion of the edge of the wafer and a positioning ring, thereby improving the effect of wafer PVD deposition processing.
In order to solve the technical problems, the invention adopts the following technical scheme:
a wafer PVD deposition processing method comprises the following steps:
s1: transferring the wafer of the loading station to a processing station, and limiting the edge of the wafer in a positioning ring;
s2: heating the wafer and carrying out gas phase precipitation;
s3: after a preset processing time period, stopping heating and gas phase precipitation of the wafer, and transferring the wafer from the processing station to the feeding station so as to enable the wafer to be separated from contact with the positioning ring;
s4: and repeating the steps S1 to S3 until the PVD deposition processing of the wafer is completed.
The invention also discloses a wafer PVD deposition processing system, which comprises:
the gas phase precipitation unit is used for realizing gas phase precipitation of the wafer;
the positioning ring is arranged at a processing station below the vapor deposition unit and used for limiting the edge of the wafer;
the placing support is arranged below the positioning ring and used for supporting and placing the wafer;
the bracket lifting mechanism is used for driving the placing bracket to lift;
the heating base is arranged below the placing support and used for heating the wafer;
the base lifting mechanism is used for driving the heating base to lift;
and the control unit is used for controlling the vapor deposition unit, the support lifting mechanism, the heating base and the base lifting mechanism to execute corresponding actions based on the wafer PVD deposition processing method.
Preferably, during deposition processing, the control unit firstly controls the support lifting mechanism to drive the wafer placed on the support to ascend to a processing station, so that the edge of the wafer is limited in the positioning ring; then controlling a base lifting mechanism to drive a heating base to rise to the position below the wafer, so that a heating part of the heating base is in contact with the wafer; and finally, controlling the heating base to heat the wafer, and controlling the vapor deposition unit to perform vapor deposition on the wafer.
Preferably, when the deposition processing is stopped, the control unit firstly controls the heating base to stop heating and controls the base lifting mechanism to drive the heating base to descend to the initial position so as to cool the wafer; and then controlling the support lifting mechanism to drive the wafer on the placing support to descend to the feeding station, so that the wafer is separated from the contact with the positioning ring.
Preferably, the placing support comprises a bottom plate fixedly connected with the lifting part of the support lifting mechanism and horizontally opposite to the positioning ring, and a plurality of supporting columns which are arranged on the upper surface of the bottom plate and extend towards the direction of the positioning ring and are used for supporting and placing the wafer; each support column is arranged in a circumferential mode, and the horizontal projection position of each support column on the bottom plate corresponds to the edge of the wafer, so that the edge of the wafer can be connected to each support column in an overlapping mode.
Preferably, the top of each support column is provided with a sinking platform structure towards the position of the circle center when the top of each support column is arranged on the circumference of the support column, so that the edge of the wafer can be lapped on the sinking platform structure of each support column and is limited by the side wall of the sinking platform structure.
Preferably, the through hole is formed in the middle of the bottom plate, the size of the through hole corresponds to that of the heating portion of the heating base, and the heating portion of the bottom plate can be directly contacted with the wafer through the through hole of the bottom plate when the wafer is heated by the heating base.
Compared with the prior art, the wafer PVD deposition processing method and the system have the following beneficial effects:
the invention divides the processing process into a plurality of same processing sub-steps, realizes the step-by-step intermittent processing of wafer PVD (physical vapor deposition), and on one hand, the step-by-step intermittent processing mode ensures that the film layer deposited on the wafer every time is very thin, so that the edge of the wafer is not easy to adhere to the positioning ring, and further the wafer breakage rate can be reduced, thereby improving the wafer PVD deposition processing effect and optimizing the wafer PVD deposition processing process; on the other hand, when each substep is completed, the heating is stopped, the wafer is cooled, and the wafer is separated from the contact with the positioning ring, so that the problem of adhesion between the edge of the wafer and the positioning ring which possibly exists can be effectively solved, and the PVD (physical vapor deposition) processing effect of the wafer is better improved.
Drawings
For purposes of promoting a better understanding of the objects, aspects and advantages of the invention, reference will now be made in detail to the present invention as illustrated in the accompanying drawings, in which:
FIG. 1 is a logic diagram of a wafer PVD deposition process;
fig. 2 and fig. 3 are schematic structural diagrams of a wafer PVD deposition processing system.
Reference numerals in the drawings of the specification include: placing a support 1, a support lifting mechanism 2, a heating base 3, a base lifting mechanism 4, a vapor deposition unit 5 and a positioning ring 6.
Detailed Description
The following is further detailed by the specific embodiments:
the first embodiment is as follows:
the embodiment discloses a wafer PVD (physical vapor deposition) deposition processing method.
As shown in fig. 1, the wafer PVD deposition processing method includes the following steps:
s1: transferring the wafer of the loading station to a processing station, and limiting the edge of the wafer in a positioning ring;
s2: heating the wafer and carrying out gas phase precipitation;
s3: after a preset processing time period, stopping heating and gas phase precipitation of the wafer, and transferring the wafer from the processing station to the feeding station so as to enable the wafer to be separated from contact with the positioning ring; the preset processing time period is set according to actual requirements, and is set to 5 minutes in the embodiment.
S4: and repeating the steps S1 to S3 until the PVD deposition processing of the wafer is completed.
The invention divides the processing process into a plurality of same processing sub-steps, realizes the step-by-step intermittent processing of wafer PVD (physical vapor deposition), and on one hand, the step-by-step intermittent processing mode ensures that the film layer deposited on the wafer every time is very thin, so that the edge of the wafer is not easy to adhere to the positioning ring, and further the wafer breakage rate can be reduced, thereby improving the wafer PVD deposition processing effect and optimizing the wafer PVD deposition processing process; on the other hand, when each substep is completed, the heating is stopped, the wafer is cooled, and the wafer is separated from the contact with the positioning ring, so that the problem of adhesion between the edge of the wafer and the positioning ring which possibly exists can be effectively solved, and the PVD (physical vapor deposition) processing effect of the wafer is better improved. Meanwhile, the positioning ring limits the edge of the wafer during vapor deposition, so that the vapor deposition effect can be effectively ensured.
Example two:
the embodiment discloses a wafer PVD (physical vapor deposition) processing system.
As shown in fig. 2 and 3, the wafer PVD deposition processing system comprises:
the vapor deposition unit 5 is used for realizing vapor deposition of the wafer; the vapor deposition unit can adopt the related components of the existing PVD equipment to realize vapor deposition.
The positioning ring 6 is arranged at a processing station below the vapor deposition unit and used for limiting the edge of the wafer; the positioning ring is an existing positioning ring (or an edge convex ring or a retaining ring) which is used at present.
The placing support 1 is arranged below the positioning circular ring and used for supporting and placing the wafer;
the support lifting mechanism 2 is used for driving the placing support to lift; the existing hydraulic lifting device can be selected.
The heating base 3 is arranged below the placing support and used for heating the wafer; the heating base is a processing machine table structure of the existing PVD equipment.
The base lifting mechanism 4 is used for driving the heating base to lift; the existing hydraulic lifting device can be selected.
And the control unit is used for controlling the vapor deposition unit, the support lifting mechanism, the heating base and the base lifting mechanism to execute corresponding actions based on the wafer PVD deposition processing method in the first embodiment. The relevant functions of the control unit are implemented on the basis of hardware and software on a computer in combination with existing relevant algorithms.
Specifically, during deposition processing, the control unit firstly controls the support lifting mechanism to drive the wafer placed on the support to ascend to a processing station, so that the edge of the wafer is limited in the positioning ring; then controlling a base lifting mechanism to drive a heating base to rise to the position below the wafer, so that a heating part of the heating base is in contact with the wafer; and finally, controlling the heating base to heat the wafer, and controlling the vapor deposition unit to perform vapor deposition on the wafer.
When the deposition processing is stopped, the control unit firstly controls the heating base to stop heating and controls the base lifting mechanism to drive the heating base to descend to the initial position so as to realize the cooling of the wafer; and then controlling the support lifting mechanism to drive the wafer on the placing support to descend to the feeding station, so that the wafer is separated from the contact with the positioning ring.
The wafer PVD deposition processing system can divide the processing process into a plurality of same processing sub-steps, and further can realize step-by-step intermittent processing of wafer PVD deposition processing, on one hand, the film layer deposited on the wafer every time is very thin in a step-by-step intermittent processing mode, so that the edge of the wafer is not easily adhered to a positioning ring, and further the wafer breakage rate can be reduced, the wafer PVD deposition processing effect can be improved, and the wafer PVD deposition processing process is optimized; on the other hand, when each substep is completed, the heating is stopped, the wafer is cooled, and the wafer is separated from the contact with the positioning ring, so that the problem of adhesion between the edge of the wafer and the positioning ring which possibly exists can be effectively solved, and the PVD (physical vapor deposition) processing effect of the wafer is better improved.
In the specific implementation process, the placing support comprises a bottom plate fixedly connected with a lifting part of the support lifting mechanism and horizontally opposite to the positioning ring, and a plurality of supporting columns which are arranged on the upper surface of the bottom plate and extend towards the direction of the positioning ring and are used for supporting and placing the wafer; each support column is arranged in a circumferential mode, and the horizontal projection position of each support column on the bottom plate corresponds to the edge of the wafer, so that the edge of the wafer can be connected to each support column in an overlapping mode. The top of each support column is provided with a sinking platform structure towards the position of the circle center when the top of each support column is arranged on the circumference of the support column, so that the edge of the wafer can be lapped on the sinking platform structure of each support column and is limited by the side wall of the sinking platform structure.
The wafer is supported and limited through the support columns, so that the wafer is not easy to fall off or shift in the transfer process, and the PVD (physical vapor deposition) processing effect of the wafer is improved in an auxiliary manner.
In the specific implementation process, the through hole is formed in the middle of the bottom plate, the size of the through hole corresponds to that of the heating portion of the heating base, and the heating portion of the through hole can be directly contacted with the wafer through the through hole of the bottom plate when the wafer is heated through the heating base.
According to the wafer PVD deposition processing device, the heating part of the heating base can penetrate through the bottom plate to be directly contacted with the wafer by the mode that the through hole is formed in the middle of the bottom plate, so that the heating effect of the wafer can be ensured, and the PVD deposition processing effect of the wafer can be improved in an auxiliary mode.
It should be noted that the above-mentioned embodiments illustrate rather than limit the invention, and that, while the invention has been described with reference to preferred embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. Meanwhile, the detailed structures, characteristics and the like of the common general knowledge in the embodiments are not described too much. Finally, the scope of the claims should be determined by the content of the claims, and the description of the embodiments and the like in the specification should be used for interpreting the content of the claims.
Claims (7)
1. A wafer PVD deposition processing method is characterized by comprising the following steps:
s1: transferring the wafer of the loading station to a processing station, and limiting the edge of the wafer in a positioning ring;
s2: heating the wafer and carrying out gas phase precipitation;
s3: after a preset processing time period, stopping heating and gas phase precipitation of the wafer, and transferring the wafer from the processing station to the feeding station so as to enable the wafer to be separated from contact with the positioning ring;
s4: and repeating the steps S1 to S3 until the PVD deposition processing of the wafer is completed.
2. A wafer PVD deposition processing system, comprising:
the gas phase precipitation unit is used for realizing gas phase precipitation of the wafer;
the positioning ring is arranged at a processing station below the vapor deposition unit and used for limiting the edge of the wafer;
the placing support is arranged below the positioning ring and used for supporting and placing the wafer;
the bracket lifting mechanism is used for driving the placing bracket to lift;
the heating base is arranged below the placing support and used for heating the wafer;
the base lifting mechanism is used for driving the heating base to lift;
a control unit for controlling the vapor deposition unit, the support lifting mechanism, the heating base and the base lifting mechanism to perform corresponding actions based on the wafer PVD deposition processing method as claimed in claim 1.
3. The wafer PVD deposition processing system of claim 2, wherein: during deposition processing, the control unit firstly controls the support lifting mechanism to drive the wafer placed on the support to ascend to a processing station, so that the edge of the wafer is limited in the positioning ring; then controlling a base lifting mechanism to drive a heating base to rise to the position below the wafer, so that a heating part of the heating base is in contact with the wafer; and finally, controlling the heating base to heat the wafer, and controlling the vapor deposition unit to perform vapor deposition on the wafer.
4. The wafer PVD deposition processing system of claim 2, wherein: when the deposition processing is stopped, the control unit firstly controls the heating base to stop heating and controls the base lifting mechanism to drive the heating base to descend to the initial position so as to realize the cooling of the wafer; and then controlling the support lifting mechanism to drive the wafer on the placing support to descend to the feeding station, so that the wafer is separated from the contact with the positioning ring.
5. The wafer PVD deposition processing system of claim 2, wherein: the placing support comprises a bottom plate which is fixedly connected with the lifting part of the support lifting mechanism and is horizontally opposite to the positioning circular ring, and a plurality of supporting columns which are arranged on the upper surface of the bottom plate and extend towards the direction of the positioning circular ring and are used for supporting and placing wafers; each support column is arranged in a circumferential mode, and the horizontal projection position of each support column on the bottom plate corresponds to the edge of the wafer, so that the edge of the wafer can be connected to each support column in an overlapping mode.
6. The wafer PVD deposition processing system of claim 5, wherein: the top of each support column is provided with a sinking platform structure towards the position of the circle center when the top of each support column is arranged on the circumference of the support column, so that the edge of the wafer can be lapped on the sinking platform structure of each support column and is limited by the side wall of the sinking platform structure.
7. The wafer PVD deposition processing system of claim 5, wherein: the through-hole has been seted up to the middle part position of bottom plate, and the size of through-hole corresponds with the heating portion size of heating base for its heating portion can be through the direct and wafer contact of through-hole of bottom plate when heating the wafer through the heating base.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111435286.2A CN114086124A (en) | 2021-11-29 | 2021-11-29 | Wafer PVD (physical vapor deposition) deposition processing method and system |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111435286.2A CN114086124A (en) | 2021-11-29 | 2021-11-29 | Wafer PVD (physical vapor deposition) deposition processing method and system |
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| CN114086124A true CN114086124A (en) | 2022-02-25 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0452779A2 (en) * | 1990-04-20 | 1991-10-23 | Applied Materials, Inc. | Physical vapor deposition clamping mechanism |
| CN103811293A (en) * | 2012-11-07 | 2014-05-21 | 中芯国际集成电路制造(上海)有限公司 | Wafer backside metallization method |
| CN208308944U (en) * | 2017-12-29 | 2019-01-01 | 中航（重庆）微电子有限公司 | A kind of sputtering chamber and Pvd equipment |
| CN213102961U (en) * | 2020-07-17 | 2021-05-04 | 常州铭赛机器人科技股份有限公司 | Jacking assembly of wafer heating device and multi-station glue dispenser with jacking assembly |
-
2021
- 2021-11-29 CN CN202111435286.2A patent/CN114086124A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0452779A2 (en) * | 1990-04-20 | 1991-10-23 | Applied Materials, Inc. | Physical vapor deposition clamping mechanism |
| CN103811293A (en) * | 2012-11-07 | 2014-05-21 | 中芯国际集成电路制造(上海)有限公司 | Wafer backside metallization method |
| CN208308944U (en) * | 2017-12-29 | 2019-01-01 | 中航（重庆）微电子有限公司 | A kind of sputtering chamber and Pvd equipment |
| CN213102961U (en) * | 2020-07-17 | 2021-05-04 | 常州铭赛机器人科技股份有限公司 | Jacking assembly of wafer heating device and multi-station glue dispenser with jacking assembly |
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Application publication date: 20220225 |