KR20020025721A - 격자 엘리먼트를 구비한 조명 시스템 - Google Patents
격자 엘리먼트를 구비한 조명 시스템 Download PDFInfo
- Publication number
- KR20020025721A KR20020025721A KR1020010059059A KR20010059059A KR20020025721A KR 20020025721 A KR20020025721 A KR 20020025721A KR 1020010059059 A KR1020010059059 A KR 1020010059059A KR 20010059059 A KR20010059059 A KR 20010059059A KR 20020025721 A KR20020025721 A KR 20020025721A
- Authority
- KR
- South Korea
- Prior art keywords
- plane
- grating
- aperture
- light
- illumination system
- Prior art date
Links
- 238000005286 illumination Methods 0.000 title claims abstract description 34
- 230000003287 optical effect Effects 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000004377 microelectronic Methods 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 230000007423 decrease Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 abstract 1
- 238000003384 imaging method Methods 0.000 description 10
- 230000004907 flux Effects 0.000 description 8
- 238000001816 cooling Methods 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 201000009310 astigmatism Diseases 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 210000001747 pupil Anatomy 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K5/00—Irradiation devices
- G21K5/04—Irradiation devices with beam-forming means
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
- G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
- G02B19/0019—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having reflective surfaces only (e.g. louvre systems, systems with multiple planar reflectors)
- G02B19/0023—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having reflective surfaces only (e.g. louvre systems, systems with multiple planar reflectors) at least one surface having optical power
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
- G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
- G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
- G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
- G02B19/0095—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with ultraviolet radiation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/09—Multifaceted or polygonal mirrors, e.g. polygonal scanning mirrors; Fresnel mirrors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70083—Non-homogeneous intensity distribution in the mask plane
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70158—Diffractive optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Microscoopes, Condenser (AREA)
- Optical Elements Other Than Lenses (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
Description
파장 | 13.4 | nm |
광자 에너지 | 92.5 | eV |
라인 수 | 1600 | l/mm |
회절 차수 | 1 | |
고정 포커스 상수 cff | 1.2 | |
주광선 CRvor의 입사각 α | 72.360 | Grad |
1차수로 회절된 주광선 CRnach의 회절각 β | -68.676 | Grad |
블레이즈 깊이 | 20.1 | nm |
격자 포커스 간격 | 432 | mm |
새지털 반경 | 654,555 | mm |
NA(격자 다음) | 0.12 | |
격자 길이 | 237 | mm |
회절 | Ru | |
마이크로 조도 | 0.5 | nm(rms) |
격자 효율 | 56 | % |
Claims (17)
- 물체 평면 및 필드 평면(22)을 포함하는 특히 파장 ≤100 nm용 조명 시스템에 있어서, 상기 조명 시스템이적어도 하나의 격자 엘리먼트(1) 및,물체 평면으로부터 필드 평면(22)으로의 광로에서 상기 격자 엘리먼트 다음에 배치된 애퍼처 평면 내의 적어도 하나의 애퍼처를 포함하는 것을 특징으로 하는 조명 시스템.
- 제 1 항에 있어서,상기 조명 시스템이 수렴 광선속을 발생시키기 위한 콜렉터 유닛(5)을 포함하고, 상기 수렴 광선속은 격자 엘리먼트(1)에 부딪치는 것을 특징으로 하는 조명 시스템.
- 제 2 항에 있어서,상기 격자 엘리먼트(1)는 각각 하나의 초점을 가진 상이한 회절 차수의 광선속을 발생시키고 상기 격자 엘리먼트의 k 회절 차수의 광선속의 초점이 물리적 애퍼처의 지점에 놓이도록 형성되며, |k| ≥ 1 인 것을 특징으로 하는 조명 시스템.
- 제 3 항에 있어서,상기 적어도 하나의 물리적 애퍼처(7.3)가 격자 엘리먼트의 n 회절 차수의 광선을 통과시키며, |k| ≥ 1 이고, k 회절 차수의 모든 광선을 90% 이상 차단하며, m≠k인 것을 특징으로 하는 조명 시스템.
- 제 1 항 내지 제 4 항 중 어느 한 항에 있어서,상기 광선이 물리적 애퍼처(7.3) 다음에서 7-26 nm 범위의 파장을 갖는 것을 특징으로 하는 조명 시스템.
- 제 1 항 내지 제 5 항 중 어느 한 항에 있어서,상기 격자 엘리먼트의 지지체 표면에 수직으로 놓인 그리고 격자 라인에 대해 수직인 격자 엘리먼트의 자오선 평면이 주어지고, 상기 격자 엘리먼트의 지지체 표면은 상기 자오선 평면에서 오목하게 또는 볼록하게 휘어지는 것을 특징으로 하는 조명 시스템.
- 제 1 항 내지 제 6 항 중 어느 한 항에 있어서,상기 격자 엘리먼트의 지지체 표면에 수직으로 놓인 그리고 격자 라인에 대해 평행하며 상기 격자 엘리먼트의 중심점을 포함하는 격자 엘리먼트의 새지털 평면이 주어지고, 상기 격자 엘리먼트가 상기 새지털 평면에서 오목하게 또는 볼록하게 휘어지는 것을 특징으로 하는 조명 시스템.
- 제 1 항 내지 제 6 항 중 어느 한 항에 있어서,상기 격자 엘리먼트의 격자 라인의 간격이 변동되는 것을 특징으로 하는 조명 시스템.
- 제 8 항에 있어서,상기 격자 라인의 간격이 입사 광선속의 광선의 입사각이 커짐에 따라 감소되는 것을 특징으로 하는 조명 시스템.
- 제 1 항 내지 제 9 항 중 어느 한 항에 있어서,상기 격자 엘리먼트가 블레이즈 격자인 것을 특징으로 하는 조명 시스템,
- 제 1 항 내지 제 10 항 중 어느 한 항에 있어서,상기 조명 시스템의 물체 평면에 1차 광원(3), 바람직하게는 레이저-플라즈마-소오스가 배치되고, 상기 소오스는 조명 시스템의 물리적 애퍼처(7.3) 지점에서 2차 광원(4)에 결상되는 것을 특징으로 하는 조명 시스템.
- 제 1 항 내지 제 11 항 중 어느 한 항에 있어서,상기 조명 시스템이 물리적 애퍼처를 가진 애퍼처 평면과 필드 평면 사이에 필드를 형성 및 조명하기 위한 광학 시스템(20)을 포함하는 것을 특징으로 하는 조명 시스템.
- 제 12 항에 있어서,상기 광학 시스템(20)이 필드의 균일한 조명을 위한 혼합 유닛을 포함하는 것을 특징으로 하는 조명 시스템.
- 제 12 항 내지 제 13 항 중 어느 한 항에 있어서,상기 필드가 링 필드의 세그먼트이며, 상기 광학 시스템이 필드 형성 부품(32)을 포함하는 것을 특징으로 하는 조명 시스템.
- 제 1 항 내지 제 14 항 중 어느 한 항에 있어서,상기 조명 시스템이 물체 평면과 애퍼처 평면(7.3) 사이의 광로에 부가의 애퍼처(7.1, 7.2)를 포함하는 것을 특징으로 하는 조명 시스템.
- 제 1 항 내지 제 15 항 중 어느 한 항에 다른 조명 시스템;구조 지지 마스크;투사 대물렌즈(26);감광성 물체를 포함하고, 상기 구조 지지 마스크는 감광성 물체 상에 결상되는 마이크로 일렉트로닉 부품을 제조하기 위한 투사 노광 장치.
- 제 16 항에 따른 투사 노광 장치를 포함하는 마이크로 일렉트로닉 부품, 특히 반도체 부품의 제조 방법.
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/679,718 US6438199B1 (en) | 1998-05-05 | 2000-09-29 | Illumination system particularly for microlithography |
US09/679,718 | 2000-09-29 | ||
DE10103738 | 2001-01-26 | ||
DE10103738.4 | 2001-01-26 | ||
DE10127298.7 | 2001-06-06 | ||
DE10127298 | 2001-06-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20020025721A true KR20020025721A (ko) | 2002-04-04 |
KR100931335B1 KR100931335B1 (ko) | 2009-12-11 |
Family
ID=27214253
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020010059059A KR100931335B1 (ko) | 2000-09-29 | 2001-09-24 | 격자 엘리먼트를 구비한 조명 시스템 |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1202291B1 (ko) |
JP (1) | JP2002184690A (ko) |
KR (1) | KR100931335B1 (ko) |
DE (1) | DE50112953D1 (ko) |
TW (1) | TW530164B (ko) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE60312871T2 (de) | 2002-08-26 | 2007-12-20 | Carl Zeiss Smt Ag | Gitter basierter spektraler filter zur unterdrückung von strahlung ausserhalb des nutzbandes in einem extrem-ultraviolett lithographiesystem |
DE60319735T2 (de) * | 2002-12-19 | 2009-04-16 | Carl Zeiss Smt Ag | Beleuchtungssytem mit einer effizienteren kollektoroptik |
DE10309971A1 (de) * | 2003-03-07 | 2004-09-16 | Leica Microsystems (Schweiz) Ag | Operationsmikroskop mit einer Objektfeldbeleuchtung |
AU2003267015A1 (en) | 2003-08-27 | 2005-04-14 | Carl Zeiss Smt Ag | Oblique reflector normal incidence collector system for light sources, in particular for euv plasma discharge sources |
JP5126928B2 (ja) * | 2005-04-20 | 2013-01-23 | 大日本スクリーン製造株式会社 | 画像記録装置 |
US20090115986A1 (en) | 2005-06-02 | 2009-05-07 | Carl Zeiss Smt Ag | Microlithography projection objective |
US8208127B2 (en) | 2007-07-16 | 2012-06-26 | Carl Zeiss Smt Gmbh | Combination stop for catoptric projection arrangement |
US8081296B2 (en) * | 2007-08-09 | 2011-12-20 | Nikon Corporation | Illumination optical apparatus, exposure apparatus, and device manufacturing method |
US7821900B2 (en) * | 2008-05-15 | 2010-10-26 | Northrop Grumman Systems Corporation | Diffractive optical element and method of designing the same |
JP5061069B2 (ja) * | 2008-05-20 | 2012-10-31 | ギガフォトン株式会社 | 極端紫外光を用いる半導体露光装置 |
US8351022B2 (en) * | 2009-06-15 | 2013-01-08 | Asml Netherlands B.V. | Radiation beam modification apparatus and method |
DE102012010093A1 (de) * | 2012-05-23 | 2013-11-28 | Carl Zeiss Smt Gmbh | Facettenspiegel |
JP6232210B2 (ja) * | 2013-06-03 | 2017-11-15 | ギガフォトン株式会社 | ミラー装置、極端紫外光生成装置及び極端紫外光生成システム |
DE102016212361A1 (de) * | 2016-07-06 | 2018-01-11 | Carl Zeiss Smt Gmbh | Optisches Gitter und optische Anordnung damit |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07301696A (ja) * | 1994-05-09 | 1995-11-14 | Hitachi Ltd | X線投影露光方法及び装置 |
US6118577A (en) * | 1998-08-06 | 2000-09-12 | Euv, L.L.C | Diffractive element in extreme-UV lithography condenser |
US6100978A (en) * | 1998-10-21 | 2000-08-08 | Naulleau; Patrick P. | Dual-domain point diffraction interferometer |
-
2001
- 2001-09-24 KR KR1020010059059A patent/KR100931335B1/ko active IP Right Grant
- 2001-09-28 DE DE50112953T patent/DE50112953D1/de not_active Expired - Fee Related
- 2001-09-28 TW TW090124051A patent/TW530164B/zh not_active IP Right Cessation
- 2001-09-28 EP EP01123195A patent/EP1202291B1/de not_active Expired - Lifetime
- 2001-09-28 JP JP2001303701A patent/JP2002184690A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JP2002184690A (ja) | 2002-06-28 |
KR100931335B1 (ko) | 2009-12-11 |
EP1202291A3 (de) | 2006-04-19 |
EP1202291B1 (de) | 2007-09-05 |
EP1202291A2 (de) | 2002-05-02 |
DE50112953D1 (de) | 2007-10-18 |
TW530164B (en) | 2003-05-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7248667B2 (en) | Illumination system with a grating element | |
US6930760B2 (en) | Lithographic apparatus, device manufacturing method, and device manufactured thereby | |
EP1540423B1 (en) | Grating based spectral filter for eliminating out of band radiation in an extreme ultra-violet lithography system | |
KR100931335B1 (ko) | 격자 엘리먼트를 구비한 조명 시스템 | |
JP4733907B2 (ja) | 超紫外線リソグラフィーコンデンサに用いる回折スペクトルフィルタ | |
US9195144B2 (en) | Spectral purity filter, radiation source, lithographic apparatus, and device manufacturing method | |
JP5475756B2 (ja) | スペクトル純度フィルタを形成する方法 | |
US6707602B2 (en) | Reflective spectral filtering of high power extreme ultra-violet radiation | |
US6836530B2 (en) | Illumination system with a plurality of individual gratings | |
JP5637702B2 (ja) | 露光装置およびデバイス製造方法 | |
WO2003042728A2 (en) | Achromatic fresnel optics for ultraviolet and x-ray radiation | |
US20080225258A1 (en) | EUV illumination system having a folding geometry | |
US7084412B2 (en) | Collector unit with a reflective element for illumination systems with a wavelength of smaller than 193 nm | |
EP1197803B1 (en) | Lithographic apparatus | |
US11947265B2 (en) | Optical diffraction component | |
JPH07301696A (ja) | X線投影露光方法及び装置 | |
JP2005521107A (ja) | 100nm以下の波長を濾光するための格子素子 | |
JP2005522026A (ja) | 193nm以下の波長を用いる照明光学系のための反射素子を備えた集光ユニット | |
US20050180013A1 (en) | Grating element for filtering wavelengths < 100 nm |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
N231 | Notification of change of applicant | ||
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E90F | Notification of reason for final refusal | ||
E902 | Notification of reason for refusal | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20121123 Year of fee payment: 4 |
|
FPAY | Annual fee payment |
Payment date: 20131121 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20141120 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20151119 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20161124 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20181122 Year of fee payment: 10 |