KR20020015707A - 전계 전자 방출 물질 제조방법 및 그 물질을 포함하는전계 전자 에미터 - Google Patents
전계 전자 방출 물질 제조방법 및 그 물질을 포함하는전계 전자 에미터 Download PDFInfo
- Publication number
- KR20020015707A KR20020015707A KR1020017016755A KR20017016755A KR20020015707A KR 20020015707 A KR20020015707 A KR 20020015707A KR 1020017016755 A KR1020017016755 A KR 1020017016755A KR 20017016755 A KR20017016755 A KR 20017016755A KR 20020015707 A KR20020015707 A KR 20020015707A
- Authority
- KR
- South Korea
- Prior art keywords
- mixture
- silica
- field electron
- emitter
- precursor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000463 material Substances 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims description 107
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 148
- 239000002245 particle Substances 0.000 claims abstract description 70
- 239000000758 substrate Substances 0.000 claims abstract description 59
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 58
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 55
- 239000010439 graphite Substances 0.000 claims abstract description 53
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 53
- 239000002243 precursor Substances 0.000 claims abstract description 44
- 238000012545 processing Methods 0.000 claims abstract description 17
- 239000000203 mixture Substances 0.000 claims description 51
- 230000008569 process Effects 0.000 claims description 37
- 230000005684 electric field Effects 0.000 claims description 15
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 14
- 229920000642 polymer Polymers 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 7
- 238000007639 printing Methods 0.000 claims description 7
- 239000002904 solvent Substances 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- 239000006185 dispersion Substances 0.000 claims description 6
- 150000002736 metal compounds Chemical class 0.000 claims description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 5
- 229910001887 tin oxide Inorganic materials 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 239000002041 carbon nanotube Substances 0.000 claims description 4
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 4
- 238000005401 electroluminescence Methods 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 4
- 239000012071 phase Substances 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 238000007641 inkjet printing Methods 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 3
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 2
- 150000001768 cations Chemical class 0.000 claims description 2
- 239000008119 colloidal silica Substances 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 239000007791 liquid phase Substances 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 239000011572 manganese Substances 0.000 claims description 2
- 230000037452 priming Effects 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- LFLZOWIFJOBEPN-UHFFFAOYSA-N nitrate, nitrate Chemical compound O[N+]([O-])=O.O[N+]([O-])=O LFLZOWIFJOBEPN-UHFFFAOYSA-N 0.000 claims 1
- 239000000976 ink Substances 0.000 description 20
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 16
- 239000012212 insulator Substances 0.000 description 13
- 238000000576 coating method Methods 0.000 description 12
- 239000010408 film Substances 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 10
- 239000000499 gel Substances 0.000 description 9
- 239000000243 solution Substances 0.000 description 8
- 229910003460 diamond Inorganic materials 0.000 description 7
- 239000010432 diamond Substances 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 239000008367 deionised water Substances 0.000 description 5
- 229910021641 deionized water Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 230000000704 physical effect Effects 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910006404 SnO 2 Inorganic materials 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000012258 stirred mixture Substances 0.000 description 4
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910033181 TiB2 Inorganic materials 0.000 description 3
- 238000007792 addition Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 238000003491 array Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 150000002902 organometallic compounds Chemical class 0.000 description 3
- 238000005036 potential barrier Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- LHENQXAPVKABON-UHFFFAOYSA-N 1-methoxypropan-1-ol Chemical compound CCC(O)OC LHENQXAPVKABON-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000002178 crystalline material Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000013557 residual solvent Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 229910052580 B4C Inorganic materials 0.000 description 1
- 241001428800 Cell fusing agent virus Species 0.000 description 1
- 229910000608 Fe(NO3)3.9H2O Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910018380 Mn(NO3)2.6H2 O Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 241000790101 Myriopus Species 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000004924 electrostatic deposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000006023 eutectic alloy Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000002073 fluorescence micrograph Methods 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 208000036971 interstitial lung disease 2 Diseases 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 150000002696 manganese Chemical class 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000012703 sol-gel precursor Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3048—Distributed particle emitters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J63/00—Cathode-ray or electron-stream lamps
- H01J63/02—Details, e.g. electrode, gas filling, shape of vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Cold Cathode And The Manufacture (AREA)
- Electrodes For Cathode-Ray Tubes (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9915633.3 | 1999-07-05 | ||
| GBGB9915633.3A GB9915633D0 (en) | 1999-07-05 | 1999-07-05 | Field electron emission materials and devices |
| PCT/GB2000/002537 WO2001003154A1 (en) | 1999-07-05 | 2000-06-30 | Method of creating a field electron emission material and field electron emitter comprising said material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20020015707A true KR20020015707A (ko) | 2002-02-28 |
Family
ID=10856606
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020017016755A Abandoned KR20020015707A (ko) | 1999-07-05 | 2000-06-30 | 전계 전자 방출 물질 제조방법 및 그 물질을 포함하는전계 전자 에미터 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6969536B1 (https=) |
| EP (1) | EP1198818A1 (https=) |
| JP (1) | JP2003504802A (https=) |
| KR (1) | KR20020015707A (https=) |
| CN (1) | CN1199218C (https=) |
| AU (1) | AU5694400A (https=) |
| CA (1) | CA2378454A1 (https=) |
| GB (2) | GB9915633D0 (https=) |
| WO (1) | WO2001003154A1 (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040011314A (ko) * | 2002-07-30 | 2004-02-05 | 김영철 | 탄소나노튜브 분말을 사용한 음이온 발생 장치 |
| KR100845086B1 (ko) * | 2005-12-06 | 2008-07-09 | 캐논 가부시끼가이샤 | 박막의 제조방법, 그리고 전자방출소자의 제조방법 및 유기el소자의 제조방법 |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB0015928D0 (en) * | 2000-06-30 | 2000-08-23 | Printable Field Emitters Limit | Field emitters |
| KR20020049630A (ko) * | 2000-12-19 | 2002-06-26 | 임지순 | 전계방출 에미터 |
| GB0106358D0 (en) * | 2001-03-13 | 2001-05-02 | Printable Field Emitters Ltd | Field emission materials and devices |
| US6723299B1 (en) | 2001-05-17 | 2004-04-20 | Zyvex Corporation | System and method for manipulating nanotubes |
| JP3839713B2 (ja) * | 2001-12-12 | 2006-11-01 | 株式会社ノリタケカンパニーリミテド | 平面ディスプレイの製造方法 |
| JP2003303540A (ja) * | 2002-04-11 | 2003-10-24 | Sony Corp | 電界電子放出膜、電界電子放出電極および電界電子放出表示装置 |
| US6905667B1 (en) | 2002-05-02 | 2005-06-14 | Zyvex Corporation | Polymer and method for using the polymer for noncovalently functionalizing nanotubes |
| US20040034177A1 (en) | 2002-05-02 | 2004-02-19 | Jian Chen | Polymer and method for using the polymer for solubilizing nanotubes |
| TWI287940B (en) * | 2003-04-01 | 2007-10-01 | Cabot Microelectronics Corp | Electron source and method for making same |
| JP2007516314A (ja) | 2003-05-22 | 2007-06-21 | ザイベックス コーポレーション | ナノコンポジットおよびナノコンポジットに関する方法 |
| CN1300818C (zh) * | 2003-08-06 | 2007-02-14 | 北京大学 | 一种场发射针尖及其制备方法与应用 |
| KR20070116888A (ko) * | 2004-03-12 | 2007-12-11 | 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 | 아몰퍼스 산화물 및 박막 트랜지스터 |
| US7834530B2 (en) * | 2004-05-27 | 2010-11-16 | California Institute Of Technology | Carbon nanotube high-current-density field emitters |
| US7296576B2 (en) | 2004-08-18 | 2007-11-20 | Zyvex Performance Materials, Llc | Polymers for enhanced solubility of nanomaterials, compositions and methods therefor |
| US8604681B2 (en) * | 2008-03-05 | 2013-12-10 | Georgia Tech Research Corporation | Cold cathodes and ion thrusters and methods of making and using same |
| EP2254148B1 (en) * | 2009-05-18 | 2011-11-30 | S.O.I.Tec Silicon on Insulator Technologies | Fabrication process of a hybrid semiconductor substrate |
| CN101714496B (zh) * | 2009-11-10 | 2014-04-23 | 西安交通大学 | 利用多层薄膜型电子源的平面气体激发光源 |
| US9058954B2 (en) | 2012-02-20 | 2015-06-16 | Georgia Tech Research Corporation | Carbon nanotube field emission devices and methods of making same |
| KR101340356B1 (ko) * | 2012-03-20 | 2013-12-10 | 한국과학기술원 | 탄소나노튜브/금속 나노복합소재 및 이의 제조방법 |
| CN110189967B (zh) * | 2019-07-02 | 2020-05-26 | 电子科技大学 | 一种带有限流阻变层的场发射阴极结构及其制备方法 |
| EP3933881A1 (en) | 2020-06-30 | 2022-01-05 | VEC Imaging GmbH & Co. KG | X-ray source with multiple grids |
| US12230468B2 (en) | 2022-06-30 | 2025-02-18 | Varex Imaging Corporation | X-ray system with field emitters and arc protection |
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| GB1473849A (en) * | 1973-09-28 | 1977-05-18 | Mullard Ltd | Glow-discharge display device |
| US5608283A (en) * | 1994-06-29 | 1997-03-04 | Candescent Technologies Corporation | Electron-emitting devices utilizing electron-emissive particles which typically contain carbon |
| US5623180A (en) * | 1994-10-31 | 1997-04-22 | Lucent Technologies Inc. | Electron field emitters comprising particles cooled with low voltage emitting material |
| US5709577A (en) * | 1994-12-22 | 1998-01-20 | Lucent Technologies Inc. | Method of making field emission devices employing ultra-fine diamond particle emitters |
| CN1103110C (zh) * | 1995-08-04 | 2003-03-12 | 可印刷发射体有限公司 | 场电子发射材料和装置 |
| US5667724A (en) * | 1996-05-13 | 1997-09-16 | Motorola | Phosphor and method of making same |
| JP3568345B2 (ja) * | 1997-01-16 | 2004-09-22 | 株式会社リコー | 電子発生装置 |
| GB2332089B (en) * | 1997-12-04 | 1999-11-03 | Printable Field Emitters Limit | Field electron emission materials and devices |
| WO1999031702A1 (en) * | 1997-12-15 | 1999-06-24 | E.I. Du Pont De Nemours And Company | Ion bombarded graphite electron emitters |
| US6250984B1 (en) * | 1999-01-25 | 2001-06-26 | Agere Systems Guardian Corp. | Article comprising enhanced nanotube emitter structure and process for fabricating article |
-
1999
- 1999-07-05 GB GBGB9915633.3A patent/GB9915633D0/en not_active Ceased
-
2000
- 2000-06-30 EP EP00942240A patent/EP1198818A1/en not_active Withdrawn
- 2000-06-30 WO PCT/GB2000/002537 patent/WO2001003154A1/en not_active Ceased
- 2000-06-30 US US10/030,570 patent/US6969536B1/en not_active Expired - Fee Related
- 2000-06-30 CN CNB008099960A patent/CN1199218C/zh not_active Expired - Fee Related
- 2000-06-30 CA CA002378454A patent/CA2378454A1/en not_active Abandoned
- 2000-06-30 KR KR1020017016755A patent/KR20020015707A/ko not_active Abandoned
- 2000-06-30 JP JP2001508471A patent/JP2003504802A/ja active Pending
- 2000-06-30 AU AU56944/00A patent/AU5694400A/en not_active Abandoned
- 2000-06-30 GB GB0015926A patent/GB2353631B/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040011314A (ko) * | 2002-07-30 | 2004-02-05 | 김영철 | 탄소나노튜브 분말을 사용한 음이온 발생 장치 |
| KR100845086B1 (ko) * | 2005-12-06 | 2008-07-09 | 캐논 가부시끼가이샤 | 박막의 제조방법, 그리고 전자방출소자의 제조방법 및 유기el소자의 제조방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| AU5694400A (en) | 2001-01-22 |
| US6969536B1 (en) | 2005-11-29 |
| GB2353631A (en) | 2001-02-28 |
| WO2001003154A1 (en) | 2001-01-11 |
| GB2353631B (en) | 2001-07-11 |
| CN1199218C (zh) | 2005-04-27 |
| EP1198818A1 (en) | 2002-04-24 |
| CN1360731A (zh) | 2002-07-24 |
| JP2003504802A (ja) | 2003-02-04 |
| GB9915633D0 (en) | 1999-09-01 |
| CA2378454A1 (en) | 2001-01-11 |
| GB0015926D0 (en) | 2000-08-23 |
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