KR20020011794A - anti-static inductively particle trapping system - Google Patents
anti-static inductively particle trapping system Download PDFInfo
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- KR20020011794A KR20020011794A KR1020000045331A KR20000045331A KR20020011794A KR 20020011794 A KR20020011794 A KR 20020011794A KR 1020000045331 A KR1020000045331 A KR 1020000045331A KR 20000045331 A KR20000045331 A KR 20000045331A KR 20020011794 A KR20020011794 A KR 20020011794A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
Abstract
Description
본 발명은 파티클 발생 억제방안의 하나인 정전유도형 파티클 집진 장치에 관한 것으로서, 특히 반도체 및 산업용 화학기상증착, 물리적기상층착 공정에서 반응원료에 의해서 다량으로 발생되는 파티클(particle)을 일정한 양의 전하를 인가하여 포집시키는 장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic induction particle collecting device which is one of particle generation suppression methods. Particularly, in a semiconductor and industrial chemical vapor deposition and physical vapor deposition process, a large amount of particles generated by a reaction material in a certain amount of charge are charged. The present invention relates to a device for collecting by applying a.
현재, 반도체 제조공정에 있어서 공정요구조건의 까다로움과 높은 양산성이 점점 강조됨에 따라 공론화 되는 문제로 파티클 억제에 대한 필요성이 높아지고 있다.At present, the demand for particle suppression is increasing due to the issue of public debate as the difficulty of process requirements and high mass productivity are emphasized in the semiconductor manufacturing process.
흔히 파티클을 발생요소에 따라 기계적인 파티클 및 증착 파티클로 구분 짓는다. 전자는 공정전에 웨이퍼가 원천적으로 이미 갖고 있는 파티클을 의미하는 것으로 일반적으로 수세를 통해서 해결하지만 공정실로 이동 중에 다량의 파티클이 생성될 소지는 많이 있으며, 후자는 공정 후에 반응원료에 의해 발생되는 생성물에 의한 파티클로 공정 후에는 필연적으로 반드시 발생하게 되는 것으로 이는 장치의 세정주기와 대단히 밀접한 관계가 있는 인자로 고품질의 제품 신뢰성 및 양산수율에 직접적인 영향을 주고 있으므로 발생억제에 다양한 노력을 기울이고 있다.Particles are often classified into mechanical particles and deposition particles according to their source. The former refers to particles that the wafer already has before the process, and is generally solved by washing with water, but there is a possibility that a large amount of particles are generated while moving to the process chamber, and the latter is applied to the product generated by the reaction raw material after the process. After the particle process, it is inevitably generated. This is a factor that is very closely related to the cleaning cycle of the apparatus, which has a direct effect on high-quality product reliability and mass production yield.
특히 반도체소자 제조에 있어서 차세대 메모리, 비메모리 소자의 극미세회로 패턴의 요구규격은 소자의 기하학적인 형상뿐만 아니라 전기적 특성을 동시에 만족해야만 제품으로서의 역할을 할 수 있는 것이다. 소자의 전기적 특성은 바로 불순물(파티클의 수 및 크기) 농도에 아주 민감하여 소자의 동작 신뢰성을 결정짓는 중요한 인자로 작용한다.In particular, the requirements for the ultra-fine circuit pattern of next-generation memory and non-memory devices in semiconductor device manufacturing must satisfy the geometrical shape of the device as well as the electrical characteristics to serve as a product. The electrical characteristics of the device are very sensitive to the concentration of impurities (number and size of particles), which is an important factor in determining the operation reliability of the device.
종래는 주로 파티클 발생 억제 방안으로는 기구학적인 설계 및 사용 재료의 물성, 표면 상태, 기하학적인 형상, 유체의 흐름에 주안점을 둔 흔히 물리적인 관점에서 해결방안을 찾으려고 노력해 왔지만 이는 구현과 효율상의 한계점이 있다.Conventionally, there have been efforts to find a solution from a physical point of view, which mainly focuses on kinematic design and material properties, surface state, geometric shape, and fluid flow. have.
따라서, 본 발명이 이루고자 하는 기술적 과제는 기계적인 파티클 억제방안의 한계성을 극복하고, 효율적으로 파티클 발생을 억제 및 제어하여 고품질의 제품생산과 생산수율의 극대화를 달성하는 상술한 종래의 기술을 대체하는 정전유도형파티클 집진장치를 제공하는데 있다.Therefore, the technical problem to be achieved by the present invention is to overcome the limitations of the mechanical particle suppression scheme, and to replace the above-mentioned conventional techniques to achieve high quality production and maximization of production yield by effectively suppressing and controlling particle generation. An electrostatic induction particle collection device is provided.
본 발명에서는 전자의 종래의 방법과는 달리 이러한 요구조건을 충족시켜주는 파티클 억제 방안의 하나로 파티클을 일정량의 양 혹은 음전하를 띤 입자라는 관점에 접근하여 이를 전기적인 에너지를 가하여 유도시켜 공정중에 부유되지 않도록 붙잡아 두는 정전유도형 파티클 집진장치를 제공한다.In the present invention, unlike the former method of the present invention as one of the particle suppression scheme that satisfies these requirements, the particle is approached to a certain amount of positive or negatively charged particles, and induced by applying electrical energy to prevent the particles from floating in the process. Provided is an electrostatic induction particle collector which is held in place.
본 발명은, 반응기체가 유입되어 반응이 일어나는 공정실과, 반응기체가 공정후에 강제 배기되는 배기관, 배기관과 펌프사이 혹은 배기관 옆 혹은 공정실에 여분으로 만들어져 있는 시창 탈.부착형 정전유도 파티클 집진장치, 여기에 정전 유도를 이루어지도록 해주는 직,교류전원장치로 구성됨을 특징으로 한다. 여기서 사용하는 공정실은 가능한한 파티클이 발생되지 않도록 기구적, 열,유체학적으로 여러 가지 복합적인 메카니즘을 접목하였으며, 특히 공정실로 도입된 반응원료(흔히 반응기체)는 일부는 반응에 참여하고 나머지 일부분은 참여하지 못하고 초기 도입상태 혹은 상호반응에 의한 제2의 생성물질로 되어 배출되는 기체 배기관 부분은 기체의 와류와 열역학적으로 파티클이 축적될 수 있는 소지가 많은 부분으로 기구적인 설계뿐만 아니라 반드시 열역학적인 메카니즘을 도입해야 하는 중요한 구성부로 전자의 주 공정실과 같이 본 발명을 적용시 공정 파티클 발생을 최소화 할 수 있는 중요 지점이라고 할 수 있다.The present invention relates to a process chamber in which a reactant flows into a reaction chamber, and a sight glass detachable electrostatic induction particle collecting device in which a reactive gas is forcedly exhausted after a process, between an exhaust pipe and a pump or next to an exhaust pipe or in a process chamber. , Here it is characterized by consisting of a direct current, alternating current power supply to make the electrostatic induction. The process chamber used here incorporates various mechanisms such as mechanical, thermal, and fluid so that particles are not generated as much as possible. Particularly, the reaction raw materials (often reactors) introduced into the process chamber are partly involved in the reaction, and part of the rest is part of the reaction. The part of the gas exhaust pipe which is not participated and is discharged as a second product by the initial introduction state or the interaction is a part that is likely to accumulate particles in the vortex of the gas and thermodynamically. As an important component to introduce the mechanism, it can be said that it is an important point to minimize the generation of process particles when applying the present invention, such as the main process chamber of the former.
도 1은 본 발명의 제1 실시예에 따른 정전유도형 파티클 집진장치를 설명하기 위한 개략도이다.1 is a schematic diagram illustrating an electrostatic induction particle collecting device according to a first embodiment of the present invention.
< 도면의 주요 부분에 대한 호호의 설명 ><Description of the arcs of the main part of the drawing>
110: 주 공정실 120: 시창110: main process room 120: sight glass
130a ~ 130b : 정전유도형 포집장치 140: 전원공급차단부130a ~ 130b: electrostatic induction collecting device 140: power supply cutoff
150: 전원공급장치 160:배기구150: power supply 160: exhaust vent
본 발명의 일 실시예에 따른 정전유도형 파티클 집진장치는, 최적의 초기 진공도 유지 상태와 유체역학적으로 설계되어 균일한 유체 흐름을 형성하도록 되어져있는 반응기체가 유입되어 반응이 일어나는 일정 용적의 공정실과, 정전기 유도를 일어나도록 일정량의 전원을 인가 할 수 있는 전원단자형성부, 반응기체가 공정후에 강제 배기되는 배기관, 배기관과 펌프사이 혹은 배기관 옆 혹은 공정실에 여분으로 만들어져 있는 시창 탈.부착형 정전유도 파티클 집진장치, 여기에 정전기 유도를 이루어지도록 해주는 직,교류전원장치로 구성됨을 특징으로 한다. 여기서 사용하는 공정실은 가능한한 파티클이 발생되지 않도록 기구적, 열,유체학적으로 여러 가지 복합적인 메카니즘이 접목되어져 있으며, 특히 공정실로 도입된 반응원료(흔히 반응기체)는 일부는 반응에 참여하고 나머지 일부분은 참여하지 못하고 초기 도입상태 혹은 상호반응에 의한 제2의 생성물질로 되어 배출되는 기체 배기관 부분은 기체의 와류와 열역학적으로 파티클이 축적될 수 있는 소지가 많은 부분으로 기구적인 설계 뿐만 아니라 반드시 열역학적인 메카니즘을 도입해야 하는 중요한 구성부로 전자의 주 공정실과 같이 본 발명을 적용시 공정 파티클 발생을 최소화 할 수 있는 중요 지점이라고 할 수 있다.The electrostatic induction particle collector according to an embodiment of the present invention is a process chamber having a predetermined volume in which a reaction medium is introduced and reacts with an optimal initial vacuum maintaining state and a hydrodynamic design designed to form a uniform fluid flow. Power supply terminal forming unit that can apply a certain amount of power to induce static electricity, exhaust pipe where the reactor body is forcedly exhausted after the process, between sight pipe and pump or next to the exhaust pipe or in the process room. Induction particle collector, characterized in that consisting of direct current, alternating current power supply to make the induction of static electricity. The process chamber used is mechanically, thermally, and fluidly mixed with various complex mechanisms to prevent particles from being generated as much as possible. Particularly, some of the reaction raw materials introduced into the process chamber (sometimes, reactors) participate in the reaction. Part of the gas exhaust pipe that is not partly participated and is discharged as a second product by initial introduction state or interaction is a part that is likely to accumulate particles due to the vortex of the gas and thermodynamically. As an important component to introduce the mechanism, it can be said that it is an important point to minimize the generation of process particles when applying the present invention, such as the main process chamber of the former.
또한, 양,음전하을 띤 파티클을 효율적으로 포획하기 위해서는 도입된 반응원료들의 공정실내에서의 거동(특히 전하밀도)을 사전에 조사하여 이의 분포에 따른 인가전원을 결정해 줄 필요가 있다.In addition, in order to efficiently capture particles with positive and negative charges, it is necessary to investigate the behavior (especially the charge density) in the process chamber of the introduced reaction materials in advance and determine the applied power source according to the distribution thereof.
이하에서, 본 발명의 바람직한 실시예를 첨부한 도면을 참조하여 상세히 설명한다.Hereinafter, with reference to the accompanying drawings, preferred embodiments of the present invention will be described in detail.
도1은 본 발명의 제1 실시예에 따른 정전유도형 파티클 집진 장치를 설명하기 위한 개략도이다.1 is a schematic diagram for explaining an electrostatic induction particle collection device according to a first embodiment of the present invention.
도1을 참조하면, 본 발명은 초기 진공도와 균일 유체 흐름을 형성하면서 유입된 반응원료의 반응을 최적의 상태로 이루어지도록 해주는 주공정실(110)과, 주공정실내에 위치하여 양, 음전하를 띤 파티클을 정전 유도하여 포집하는 정전유도형 집진장치(130a)를 포함하여 구성된다.Referring to Figure 1, the present invention forms the initial vacuum and uniform fluid flow while the main process chamber 110 and the main process chamber to ensure that the reaction of the incoming reaction materials in the optimum state has a positive, negative charge It is configured to include an electrostatic induction dust collector 130a for collecting the particles by electrostatic induction.
상기 정전유도형 집진장치(130a)는 정전 유도를 위한 전원을 인가 받아야 하기 때문에 주 공정실과 전기적으로 격리를 해야 되며, 또한 반응기체의 주공정실내에서 균일 흐름에 방해를 주지 않도록 형상, 위치, 표면상태, 전기 전도성을 고려한 재료선정에 주의해야 한다.The electrostatic induction dust collector 130a must be electrically isolated from the main process chamber because it needs to receive power for induction of static electricity, and also has a shape, a position, and a surface so as not to disturb the uniform flow in the main process chamber of the reactor. Care must be taken in the selection of materials taking into account the state and electrical conductivity.
또, 본 발명은 평상시에는 시창으로 사용하다가 파티클 제어가 필요한 시점에 탈·부착형 정전유도 파티클 집진장치(130c)를 설치 할 수 있는 다용도 시창부(120)를 포함하여 구성된다.In addition, the present invention is configured to include a multi-purpose sight glass 120 that can be used as a sight glass during normal use, the removable electrostatic induction particle collector 130c can be installed at a time when particle control is required.
또한, 본 발명은 양·음전하를 띤 파티클을 효율적으로 정전 유도하여 포집하도록 정정유도형 집진장치(130a)에 일정량의 전원을 인가 할 수 있도록 해주는 전원공급단자 형성부(미도시함)와, 반응기체가 공정후에 강제 배기되는 배기관(160)과, 배기관과 펌프(미도시함)사이 혹은 배기관 옆에 부착할 수 있는 정전유도 집진장치(130b)를 포함하여 구성된다.In addition, the present invention reacts with a power supply terminal forming unit (not shown) that allows a predetermined amount of power to be applied to the correction-induced dust collector 130a to efficiently collect and collect positive and negative charge particles. And an electrostatic induction dust collector 130b which can be attached between the exhaust pipe and the pump (not shown) or next to the exhaust pipe, forcing the gas to be exhausted after the process.
상기 정전유도 집진장치(130b)는 상술한 주공정실내에 있는 집진장치(130a)와 동일한 기능으로 전원공급장치(150)만 연결하면 정전유도형 집진장치로서 기능을 할 수 있도록 일체형으로 구성되어져 있다.The electrostatic induction dust collector 130b is integrally configured to function as an electrostatic induction dust collector by connecting only the power supply device 150 with the same function as the dust collector 130a in the main process chamber described above. .
또한, 본 발명은 상기 정전유도형 집진장치(130a~130c)에서 정전기 유도가일어나도록 상기 각각의 정전유도형 집진장치(130a~130c)에 설치된 전원공급단자부에 전원을 공급해주는 직·교류 전원 공급장치로 구성된다.In addition, the present invention is a direct-current power supply for supplying power to the power supply terminal installed in each of the electrostatic induction dust collector (130a ~ 130c) so that the electrostatic induction occurs in the electrostatic induction dust collector (130a ~ 130c) It consists of a device.
한편, 본 발명은 상기한 특정 실시예에 한정되는 것이 아니라 본 발명의 요지를 벗어나지 않는 범위 안에서 여러 가지로 변형 및 수정하여 실시할 수 있는 것이다. 이러한 변형 또는 수정이 본 발명의 특징을 이용하는 한 본 발명의 범위에 포함된다는 것을 명심해야 한다.On the other hand, the present invention is not limited to the above-described specific embodiments, but can be modified and modified in various ways without departing from the gist of the present invention. It should be noted that such variations or modifications are included in the scope of the present invention as long as the features of the present invention are used.
상술한 바와 같이 본 발명에 따른 정전유도형 파티클 집진장치에 의하면, 부가적인 전기에너지를 가미한 제어방식으로 종래의 기계적인 파티클 억제방식의 한계성을 극복하여, 효율적으로 파티클 발생을 억제 및 제어하므로서 점점 요구조건이 까다로운 반도체 및 산업용의 고품질의 제품생산과 양산 수율의 극대화를 달성하는 이점이 있다.As described above, according to the electrostatic induction particle collecting device according to the present invention, it overcomes the limitations of the conventional mechanical particle suppression method by a control method including additional electric energy, and is increasingly required by effectively suppressing and controlling particle generation. This has the advantage of achieving high quality production and maximizing production yield for demanding semiconductor and industrial applications.
또한, 본 발명에 의하면, 장치의 구조가 매우 간단하여 양산에 적용하기 매우 용이하며, 특히 전술한바와 같이 배기구부와 같은 위치에는 손쉽게 탈,부착이 가능한 일체형의 집진장치를 만들어 사용하면 배기구 후단에 있는 펌프로의 파티클량을 최소로 할 수 있어 펌프의 수명과 사용기간을 연장할 수 있다.In addition, according to the present invention, the structure of the device is very simple and very easy to apply to mass production, in particular, as described above, in the same position as the exhaust port, if you make an integrated dust collector that can be easily detached and attached to the rear end of the exhaust port The amount of particles to the pump can be minimized to extend the life and service life of the pump.
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