CN208517524U - Nitride deposition boiler tube - Google Patents
Nitride deposition boiler tube Download PDFInfo
- Publication number
- CN208517524U CN208517524U CN201820598426.5U CN201820598426U CN208517524U CN 208517524 U CN208517524 U CN 208517524U CN 201820598426 U CN201820598426 U CN 201820598426U CN 208517524 U CN208517524 U CN 208517524U
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- CN
- China
- Prior art keywords
- cassette
- boiler tube
- quartz ampoule
- nitride deposition
- microscope carrier
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The utility model belongs to semiconductor storage device assembly field, specially a kind of nitride deposition boiler tube, the nitride deposition boiler tube, including outer quartz ampoule and interior quartz ampoule, the interior quartz ampoule is set to inside the outer quartz ampoule, cassette is additionally provided with inside the interior quartz ampoule, cassette microscope carrier is equipped with below the cassette, the lower section of the cassette microscope carrier is equipped with load plate and screens pad, the load plate hides pad edges and is provided with annular shield portion, it is described annular shield portion outer diameter and the load plate screen pad diameter be Corresponding matching described in cassette bottom end be equipped with pedestal lantern ring, the base sheath is located on the cassette microscope carrier.The utility model is by improving existing nitride deposition boiler tube hardware facility, it avoids cassette microscope carrier metallics and etchant gas generates chemical reaction and generates black dust particale, and then avoid because dust particale leads to the generation of product wafer defect, improve product yield.
Description
Technical field
The utility model belongs to semiconductor storage device assembly field, specially a kind of nitride deposition boiler tube.
Background technique
Since LPCVD (Low-pressure CVD) Low Pressure Chemical Vapor Deposition nitride deposition boiler tube is in daily deposition
A part of silicon nitride can be deposited when film on the parts such as cassette and inside and outside quartz ampoule.With processing goods batch number increasingly
More, the film remained on part can be more and more, can be easy to fall on wafer generate micronic dust (particle).Institute
It can be increased with the increase of processing goods batch number with the amount of board micronic dust, and it was found that after quantitative batch, micronic dust amount is again
Do not have low spot.Under normal circumstances, lpcvd silicon nitride deposition boiler tube will do it period automatic striping after handling to quantitative batch
It safeguards (AUTO CLN).Automatic striping maintenance is to be carried out by being passed through the corrosive gas such as fluorine gas to the film remained on part
Corrosion, so that remaining film be made largely to fall off from part and by concussion feeding factory service end.Board is by automatic
Micronic dust amount can reduce after striping maintenance, but as the batch number of period automatic striping maintenance after table processing goods gradually increases, micro-
Dust quantity can increase (such as Fig. 1) again, so the automatic striping maintenance of board period can handle goods along with board and implement always.
Lpcvd silicon nitride deposition boiler tube can be used a large amount of when doing daily automatic striping (Auto CLN) maintenance at this stage
Fluorine gas, and fluorine gas can corrode the metal part of board components, generate a large amount of black micronic dusts (such as Fig. 2,4,5), gas can will be micro-
On dust lane to wafer, when carrying out next step process to the wafer of this attachment micronic dust, due to the presence of micronic dust, light shield is made to exist
When wiring, cause resist layer (Resist) to fall down and generate block etching make component failure (such as Fig. 3), and then influence product it is good
Rate.
A kind of processing method (Authorization Notice No. for reducing particles of dual-damascene silicon nitride process of Chinese invention patent
CN102446833B it) discloses and uses NF3Gas cleans reaction chamber, is then passed through N in reaction chamber again2O gas, with etc. from
N under the conditions of son2O gas removes hydrogen (H) and fluorine (F) remaining in reaction chamber, reaches the effect for reducing DDN process particulates
Fruit.And for how to optimize nitride deposition boiler tube and remove the dust particale generated in membrane process automatically, currently available technology does not have
Good method.
Utility model content
In order to solve the deficiencies in the prior art, influence of the micronic dust to wafer is reduced, the utility model provides a kind of silicon nitride
Deposition boiler tube.
To realize the above-mentioned technical purpose, the specific technical solution that the utility model is taken is a kind of nitride deposition furnace
Pipe, including outer quartz ampoule and interior quartz ampoule, the interior quartz ampoule are set to inside the outer quartz ampoule, inside the interior quartz ampoule
It is additionally provided with cassette, is equipped with cassette microscope carrier below the cassette, the lower section of the cassette microscope carrier is equipped with load plate and screens pad, the load
Disk screen pad diameter be greater than the cassette microscope carrier diameter and be greater than the interior quartz ampoule internal diameter, the load plate, which is screened, pads side
Edge is provided with annular shield portion, and the screen diameter of pad of the outer diameter and the load plate of the annular shield portion is Corresponding matching, described
The outer diameter of annular shield portion is less than the internal diameter of the outer quartz ampoule, is empty, the cassette bottom end at the top of the annular shield portion
Equipped with pedestal lantern ring, the base sheath is located on the cassette microscope carrier, and the outer quartz ampoule is equipped with bottom air inlet and exhaust
Mouthful.
As the improved technical solution of the utility model, the air inlet is set to the one side of the outer quartz ampoule, and institute
It states distance of the air inlet apart from nitride deposition boiler tube bottom and is less than the annular shield portion distance from top nitride deposition boiler tube
The distance of bottom.
As the improved technical solution of the utility model, the exhaust outlet be set to the outer quartz ampoule correspond to it is described
The another side of air inlet, distance of the exhaust outlet apart from nitride deposition boiler tube bottom are greater than the air inlet apart from silicon nitride
The distance of deposition boiler tube bottom.
As the improved technical solution of the utility model, the load plate screen pad diameter between 470~490mm.
As the improved technical solution of the utility model, the height of the annular shield portion is between 90~110mm.
As the improved technical solution of the utility model, the diameter of the cassette microscope carrier is between 290~310mm, the crystalline substance
The height of boat microscope carrier is between 25~35mm.
As the improved technical solution of the utility model, the internal diameter of the pedestal lantern ring is between 310~330mm, the bottom
The height Corresponding matching of the height of cover for seat ring and the cassette microscope carrier.
Beneficial effect
Firstly, the utility model, which passes through, improves existing nitride deposition boiler tube hardware facility, prevent etchant gas is from straight
Cassette microscope carrier is contacted, cassette microscope carrier metallics is avoided and etchant gas generates chemical reaction and generates black dust particale,
And then avoid because dust particale leads to the generation of product wafer defect, improve product yield.
Secondly as fluorine gas is also corrosive to quartz material, being passed through a large amount of fluorine gas for a long time can be to the load after improvement
Disk screens pad and cassette also has certain corrosion, and then generates fine-grained particles, influences product yield, and the utility model utilizes drop
Fluorine gas flow and etching period in low automatic striping maintenance process, it is possible to reduce fluorine gas screens the corrosion of pad and cassette to load plate,
It avoids generating dust particale, is further ensured that product yield.
Detailed description of the invention
As batch processing number increases the tendency chart of dust particale amount before Fig. 1, improvement.
Dust particale distribution map before Fig. 2, improvement.
Dust particale causes wafer defect to form schematic diagram before Fig. 3, improvement.
Nitride deposition boiler tube schematic diagram before Fig. 4, improvement.
Dust particale forms schematic diagram before Fig. 5, improvement.
Nitride deposition boiler tube schematic diagram after Fig. 6, improvement.
Fig. 7, improvement front and back load plate screen and pad schematic diagram.
Cassette and load plate, which are screened, before Fig. 8, improvement pads combination schematic diagram.
Cassette and load plate, which are screened, before Fig. 9, improvement pads combination schematic diagram.
Black micronic dust distribution map after Figure 10, improvement.
Etching process schematic diagram after Figure 11, improvement.
In figure, 1, outer quartz ampoule；1a, air inlet；1b, exhaust outlet；2, interior quartz ampoule；3, cassette；4, cassette microscope carrier；5, it carries
Disk is screened pad；6, wafer；7, fluorine gas；A: substrate；B, silicon nitride layer；Defect in B1, film；C, etch-resistant layer；8, dust particale.
Specific embodiment
To keep the purpose and technical solution of the utility model embodiment clearer, implement below in conjunction with the utility model
The technical solution of the utility model is clearly and completely described in example.Obviously, described embodiment is the utility model
A part of the embodiment, instead of all the embodiments.Based on described the embodiments of the present invention, ordinary skill
Personnel's every other embodiment obtained under the premise of being not necessarily to creative work, belongs to the model of the utility model protection
It encloses.
Those skilled in the art of the present technique are appreciated that unless otherwise defined, all terms used herein (including technology art
Language and scientific term) there is meaning identical with the general understanding of those of ordinary skill in the utility model fields.Also
It should be understood that those terms such as defined in the general dictionary should be understood that have in the context of the prior art
The consistent meaning of meaning will not be explained in an idealized or overly formal meaning and unless defined as here.
It can be seen that a kind of nitride deposition boiler tube, including outer quartz ampoule 1 and interior quartz ampoule 2, interior quartz ampoule 2 from Fig. 6-9
It is set to inside the outer quartz ampoule 1, cassette 3 is additionally provided with inside interior quartz ampoule 2, cassette microscope carrier 4 is equipped with below cassette 3, it is brilliant
The lower section of boat microscope carrier 4 is equipped with load plate and screens pad 5, and the screen diameter of pad 5 of load plate is greater than the diameter of cassette microscope carrier 4 and is greater than interior quartz
The internal diameter of pipe 2, load plate 5 edges of pad of screening are provided with annular shield portion 5a, load plate screen pad 5 diameter between 470~490mm,
For the height of annular shield portion 5a between 90~110mm, the screen diameter of pad 5 of the outer diameter of annular shield portion 5a and load plate is corresponding
Match, the outer diameter of annular shield portion 5a is less than the internal diameter of the outer quartz ampoule 1, is empty, 3 bottom end of cassette at the top of annular shield portion 5a
Equipped with pedestal lantern ring 3a, the diameter of cassette microscope carrier 4 is between 290~310mm, and the height of cassette microscope carrier 4 is between 25~35mm, pedestal
The internal diameter of lantern ring 3a is between 310~330mm, the height of pedestal lantern ring 3a and the height Corresponding matching of cassette microscope carrier 4, pedestal lantern ring
3a is placed on the cassette microscope carrier 4, and outer quartz ampoule 1 is equipped with bottom air inlet 1a and exhaust outlet 1b, and air inlet 1a is set to outer quartz
The one side of pipe 1, and distance of the air inlet 1a apart from nitride deposition boiler tube bottom is less than annular shield portion 5a distance from top nitrogen
The distance of SiClx deposition boiler tube bottom, exhaust outlet 1b are set to outer quartz ampoule 1 in the another side for corresponding to air inlet 1a, exhaust outlet
Distance of the 1b apart from nitride deposition boiler tube bottom is greater than distance of the air inlet 1a apart from nitride deposition boiler tube bottom, such gas
Body enters from air inlet 1a, flows up along the load plate edge annular shield portion 5a being arranged above pad 5 of screening, flows through outer quartz
It among pipe 1 and interior quartz ampoule 2, then is excluded by exhaust outlet 1b, due to the presence of annular shield portion 5a, changes gas flow,
Prevent gas from directly blowing to cassette microscope carrier 4, additionally, due to the presence of 3 bottom end pedestal lantern ring 3a of cassette, just carries cassette
Therefore 4 sets of the platform inside in pedestal lantern ring 3a, avoids corruption so that gas is difficult directly to contact with 4 metallics of cassette microscope carrier
Erosion gas contacts generation chemical reaction with 4 metallics of cassette microscope carrier and generates dust particale.
Figure 10 be after improving in the automatic striping process flow of nitride deposition boiler tube as batch processing number increases, micronic dust
The distribution map of grain, as can be seen from the figure dust particale amount is constantly in very steady not with going membrane process to be stepped up automatically
Therefore fixed state avoids because dust particale 8 increases, causes 6 product of wafer to adhere to a large amount of dust particales, thus subsequent
The generation for leading to defect in technique, substantially increases product yield, further reduced manufacturing enterprise's cost.
The another object of the utility model is to provide a kind of automatic striping process optimization of nitride deposition boiler tube
Method includes the following steps:
Step 1: cassette 3 being sent into nitride deposition boiler tube using boat elevator；
Step 2: nitrogen is passed through into nitride deposition boiler tube by air inlet 1a, it will by exhaust outlet 1b followed in turn by pump
Nitrogen is taken away, takes away the dust particale 8 in nitride deposition boiler tube, the pressure in nitride deposition boiler tube is then extracted into vacuum
State；
Step 3: after step 2, nitride deposition furnace overpressure being extracted into 5torr or so slowly, then pressure is taken out fastly
To base pressure, so that the wafer 6 carried in cassette 3 shakes, and temperature is reduced to 400 DEG C from 550 DEG C, to reach etching to temperature
Requirement；
Step 4: being passed through 0.5~1.5L of corrosive gas fluorine gas and nitric oxide after step 3, then from air inlet 1a
0.5~1.5L performs etching 15~25min to the film remained on part；
Step 5: being passed through nitrogen again by air inlet 1a into nitride deposition boiler tube, and will from exhaust outlet 1b by pump
Nitrogen is taken away, takes away the film to fall off from part and is sent into factory service end；And temperature is risen to 780 DEG C from 400 DEG C, to reach
The requirement of silicon nitride covering；
Step 6: ammonia is passed through into nitride deposition boiler tube by air inlet 1a again, and by pump from exhaust outlet 1b by ammonia
Gas is taken away, replaces the nitrogen in nitride deposition boiler tube using ammonia, prepares for silicon nitride covering；
Step 7: by step 5 and 6 preparation after, mixed gas ammonia and two are passed through into nitride deposition boiler tube
Chlorine dihydro silicon is reacted, and one layer of silicon nitride is deposited in boiler tube, and guarantees that covering is full in nitride deposition boiler tube tube wall
Silicon nitride film；
Step 8: being passed through nitrogen from air inlet 1a after step 7, then into nitride deposition boiler tube, and with pump by nitrogen
It is taken away from exhaust outlet 1b, takes away the dust particale 8 in nitride deposition boiler tube；
Step 9: being then continually fed into nitrogen, the pressure in nitride deposition boiler tube is passed through into 3~5 back pressure step back pressure
To atmospheric condition, and temperature is reduced to 550 DEG C from 780 DEG C；
Step 10: cassette 3 being drawn off using boat elevator out of reaction nitride deposition boiler tube finally, is completed entirely certainly
Dynamic striping process flow.
Since fluorine gas is also corrosive to quartz material, being passed through a large amount of fluorine gas for a long time can screen to the load plate after improvement
Pad 5 and cassette 3 also have certain corrosion, and then generate particle dust, influence product yield, the utility model, which utilizes, to be reduced certainly
Fluorine gas flow in dynamic striping service procedure process is reduced to 0.5~1.5L from original 1.5~2.5L, while 0.5~1.5L is added
Nitric oxide, due to nitric oxide gas have strong oxidizing property, can with remain on part silicon nitride film reaction, and
Substantially therefore nitric oxide gas is added without corrosivity to screen pad 5 and cassette 3 of load plate in formula, can both reduce fluorine gas
The use of flow, while guaranteeing the effect of automatic striping (Auto CLN) maintenance, and etch period also greatly shortens, from original
40~50min is reduced to 15~25min, it is possible to reduce and fluorine gas screens the corrosion of pad 5 and cassette 3 to load plate, avoids generating micronic dust,
Guarantee product yield, meanwhile, the energy has been saved, has also been reduced costs for enterprise.
The above is only the embodiments of the present invention, and the description thereof is more specific and detailed, but can not therefore understand
For a limitation on the scope of the patent of the present invention.It should be pointed out that for those of ordinary skill in the art, not taking off
Under the premise of from the utility model design, various modifications and improvements can be made, these belong to the protection of the utility model
Range.
Claims (7)
1. a kind of nitride deposition boiler tube, including outer quartz ampoule and interior quartz ampoule, the interior quartz ampoule are set to the outer quartz
Inside pipe, it is additionally provided with cassette inside the interior quartz ampoule, is equipped with cassette microscope carrier below the cassette, which is characterized in that described
The lower section of cassette microscope carrier is equipped with load plate and screens pad, the load plate screen pad diameter greater than the cassette microscope carrier diameter and be greater than
The internal diameter of the interior quartz ampoule, the load plate hide pad edges and are provided with annular shield portion, the outer diameter of the annular shield portion with
The load plate screen pad diameter be Corresponding matching, it is described annular shield portion outer diameter be less than the outer quartz ampoule internal diameter, institute
It is empty for stating at the top of annular shield portion, and the cassette bottom end is equipped with pedestal lantern ring, and the base sheath is located on the cassette microscope carrier
On, the outer quartz ampoule is equipped with bottom air inlet and exhaust outlet.
2. nitride deposition boiler tube according to claim 1, which is characterized in that the air inlet is set to the outer quartz ampoule
One side, and distance of the air inlet apart from nitride deposition boiler tube bottom is less than the annular shield portion distance from top nitrogen
The distance of SiClx deposition boiler tube bottom.
3. nitride deposition boiler tube according to claim 1, which is characterized in that the exhaust outlet is set to the outer quartz ampoule
In the another side for corresponding to the air inlet, distance of the exhaust outlet apart from nitride deposition boiler tube bottom be greater than it is described into
Distance of the port apart from nitride deposition boiler tube bottom.
4. nitride deposition boiler tube according to claim 1, which is characterized in that the load plate screen pad diameter between
470~490mm.
5. nitride deposition boiler tube according to claim 1, which is characterized in that the height of the annular shield portion is between 90
~110mm.
6. nitride deposition boiler tube according to claim 1, which is characterized in that the diameter of the cassette microscope carrier is between 290
~310mm, the height of the cassette microscope carrier is between 25~35mm.
7. nitride deposition boiler tube according to claim 1, which is characterized in that the internal diameter of the pedestal lantern ring is between 310
~330mm, the height Corresponding matching of the height of the pedestal lantern ring and the cassette microscope carrier.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2017113361891 | 2017-12-14 | ||
| CN201711336189 | 2017-12-14 |
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| CN208517524U true CN208517524U (en) | 2019-02-19 |
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| CN201820598426.5U Active CN208517524U (en) | 2017-12-14 | 2018-04-25 | Nitride deposition boiler tube |
| CN201810378193.2A Active CN109957785B (en) | 2017-12-14 | 2018-04-25 | Silicon nitride deposition furnace tube and method for optimizing automatic film removing process flow thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109957785A (en) * | 2017-12-14 | 2019-07-02 | 长鑫存储技术有限公司 | The method of nitride deposition boiler tube and its automatic striping process optimization |
| CN115142048A (en) * | 2022-06-30 | 2022-10-04 | 北海惠科半导体科技有限公司 | Wafer carrier and preparation method of silicon nitride dielectric film |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110592666A (en) * | 2019-08-27 | 2019-12-20 | 长江存储科技有限责任公司 | Polycrystalline silicon film deposition system and method |
| US11788923B2 (en) | 2020-12-30 | 2023-10-17 | Changxin Memory Technologies, Inc. | Method for detecting gas tightness of furnace tube device |
| CN114689243B (en) * | 2020-12-30 | 2023-06-27 | 长鑫存储技术有限公司 | Method for detecting air tightness of furnace tube equipment |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3056240B2 (en) * | 1990-11-20 | 2000-06-26 | 東京エレクトロン株式会社 | Heat treatment equipment |
| JPH07161645A (en) * | 1993-12-13 | 1995-06-23 | Kokusai Electric Co Ltd | Low pressure cvd device |
| JPH11222679A (en) * | 1998-02-04 | 1999-08-17 | Hitachi Ltd | Cvd apparatus and production of semiconductor device |
| JP4131677B2 (en) * | 2003-03-24 | 2008-08-13 | 株式会社日立国際電気 | Semiconductor device manufacturing method and substrate processing apparatus |
| JP2010053393A (en) * | 2008-08-27 | 2010-03-11 | Hitachi Kokusai Electric Inc | Substrate processing apparatus |
| JP6581385B2 (en) * | 2015-04-22 | 2019-09-25 | 光洋サーモシステム株式会社 | Heat treatment equipment |
| CN208517524U (en) * | 2017-12-14 | 2019-02-19 | 长鑫存储技术有限公司 | Nitride deposition boiler tube |
-
2018
- 2018-04-25 CN CN201820598426.5U patent/CN208517524U/en active Active
- 2018-04-25 CN CN201810378193.2A patent/CN109957785B/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109957785A (en) * | 2017-12-14 | 2019-07-02 | 长鑫存储技术有限公司 | The method of nitride deposition boiler tube and its automatic striping process optimization |
| CN109957785B (en) * | 2017-12-14 | 2023-06-23 | 长鑫存储技术有限公司 | Silicon nitride deposition furnace tube and method for optimizing automatic film removing process flow thereof |
| CN115142048A (en) * | 2022-06-30 | 2022-10-04 | 北海惠科半导体科技有限公司 | Wafer carrier and preparation method of silicon nitride dielectric film |
| CN115142048B (en) * | 2022-06-30 | 2023-07-07 | 北海惠科半导体科技有限公司 | Wafer carrier and preparation method of silicon nitride dielectric film |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109957785B (en) | 2023-06-23 |
| CN109957785A (en) | 2019-07-02 |
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