KR200181806Y1 - Non-contact type signal transferring device - Google Patents
Non-contact type signal transferring device Download PDFInfo
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- KR200181806Y1 KR200181806Y1 KR2019950046026U KR19950046026U KR200181806Y1 KR 200181806 Y1 KR200181806 Y1 KR 200181806Y1 KR 2019950046026 U KR2019950046026 U KR 2019950046026U KR 19950046026 U KR19950046026 U KR 19950046026U KR 200181806 Y1 KR200181806 Y1 KR 200181806Y1
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- 230000008054 signal transmission Effects 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 8
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- 230000003068 static effect Effects 0.000 abstract description 2
- 230000004907 flux Effects 0.000 description 15
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- 230000003287 optical effect Effects 0.000 description 5
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
본 고안은 전기신호를 전달하는 신호전달소자에 관한 것으로서, 주회로에 연결된 주회로환선(1)의 주위를 동일 평면상에서 둘러싼 구조로 종속회로에 연결된 종속회로환선(2)을 구성하여 주회로환선의 반경을 반도체 집적회로 제조공정을 이용하여 작게 설계함으로서 비접촉식으로 전기적 신호전달 효과를 크게할 수 있고, 전기적으로 분리 절연된 두개 이상의 전자회로를 동시에 구성하여야 할 필요가 있을 때 유용하게 적용할 수 있는 장점뿐만 아니라 정전기방지 및 노이즈를 방지하면서 전기적 신호를 비접촉식으로 전달할 수 있는 비접촉식 신호전달소자이다.The present invention relates to a signal transmission device for transmitting an electric signal, comprising a main circuit ring (2) connected to the slave circuit in a structure surrounding the main circuit ring (1) connected to the main circuit on the same plane By designing a small radius of the semiconductor integrated circuit manufacturing process, it is possible to increase the electrical signal transmission effect in a non-contact manner, and can be usefully applied when it is necessary to simultaneously configure two or more electronic circuits that are electrically isolated and insulated. In addition to the advantages, it is a non-contact signal transmission device that can transmit electrical signals in a non-contact manner while preventing static and noise.
Description
본 고안은 전기신호를 전달하는 신호전달소자에 관한 것으로서, 주회로의 도선주위에 유기되는 유도자기에 의한 전기적인 신호전달이 가능하도록하여, 주전자회로에서 전기적으로 분리된 종속전자회로로 전기적 신호를 전달하는 비접촉식 신호전달소자에 관한 것이다.The present invention relates to a signal transmission device for transmitting an electrical signal, and to enable the electrical signal transmission by induction magnets induced around the lead of the main circuit, the electrical signal is separated into a subordinate electronic circuit electrically separated from the kettle circuit It relates to a contactless signal transmission device for transmitting.
일반적으로 두 전자회로 간의 전기신호를 비접촉식으로 전달하는 종래의 대표적인 기술은 포토커플러(photo coupler)를 이용하는 것으로서, 상기 포토커플러는 주회로에서의 전기적 신호를 광신호로 변환한 후 종속회로로 전송하면 종속회로에서는 수신된 광신호를 전기적 신호로 다시 변환하는 장치이다.In general, the conventional representative technology for transmitting an electrical signal between two electronic circuits in a non-contact manner is to use a photo coupler (photo coupler), which converts the electrical signal in the main circuit into an optical signal and then transmits to the slave circuit In the slave circuit, a device converts the received optical signal back into an electrical signal.
따라서 포토커플러를 이용한 신호전달은 광신호를 이용하여 신호를 전달함으로써 주회로와 종속회로를 전기적으로 분리하며, 전기적으로 접지(ground)를 분리할 수 있다. 이와 같은 신호전달은 전기적으로 분리된 전자회로의 구조에 의해 주회로에서 발생한 노이즈를 효과적으로 차단할 수 있으며, 정전기 방지에 있어서도 장점이 있다. 그러므로 이러한 포토커플러에 의한 신호전달은 PLC회로 등의 제어회로에 흔히 사용되는 것으로 전기적으로 분리된 상태에서 주회로를 제어함으로써 회로가 보다 안전하고 간단한 장점이 있다.Therefore, the signal transmission using the photocoupler may electrically separate the main circuit and the slave circuit by transmitting the signal using the optical signal, and may electrically separate the ground. This signal transmission can effectively block the noise generated in the main circuit by the structure of the electronic circuit is electrically separated, there is also an advantage in the prevention of static electricity. Therefore, the signal transmission by the photocoupler is commonly used in a control circuit such as a PLC circuit, and the circuit is more safe and simple by controlling the main circuit in an electrically separated state.
그러나 포토커플러와 그 밖의 여러 전자부품을 PCB상에서 납땜하는 방법을 이용하는 경우는 별다른 문제점이 발생하지 않지만, 집적회로소자로 크기가 줄어드는 경우에는 전기적 신호처리회로와 광신호 처리소자를 동시에 사용하여야 하므로 반도체 집적회로 제조공정에서 그대로 사용하려면 광전회로(OEIC)의 사용이 불가피하여, 제조공정이 복잡하고 경제적으로 제조비용이 많이 소요된다고 하는 결점이 있다.However, there is no problem when soldering photocouplers and other electronic components on the PCB. However, when the size is reduced to an integrated circuit device, an electrical signal processing circuit and an optical signal processing device must be used simultaneously. In order to use the integrated circuit in the integrated circuit manufacturing process, the use of an optical circuit (OEIC) is inevitable, and a manufacturing process is complicated and economically expensive.
본 고안은 상기한 실정을 감안하여 종래 비접촉식 신호전달소자가 갖는 결점들을 제거하고자 안출한 것으로서, 반도체 집적회로 제조공정을 이용하여 주회로와 종속회로가 전기적으로 분리되면서 자기적 신호의 전달에 의해 주회로의 전기신호를 종속회로로 전달하는 비접촉식 신호전달장치를 제공함에 그 목적이 있다.The present invention has been made to eliminate the drawbacks of the conventional non-contact signal transmission device in view of the above situation, and the main circuit and the dependent circuit are electrically separated using a semiconductor integrated circuit manufacturing process, and the main signal is transferred by the magnetic signal transfer. It is an object of the present invention to provide a contactless signal transmission device for transmitting an electrical signal of a circuit to a slave circuit.
제1도는 비접촉식 신호전달회로의 모식도.1 is a schematic diagram of a contactless signal transmission circuit.
제2도는 비접촉식 신호전달회로의 복수환선 구조도.2 is a multi-line structure diagram of a contactless signal transmission circuit.
제3도는 본 고안 비접촉식 신호전달소자의 등가회로도.3 is an equivalent circuit diagram of a noncontact signal transmission device of the present invention.
제4도는 본 고안 비접촉식 신호전달소자의 전면도 및 단면도.4 is a front view and a cross-sectional view of the present invention non-contact signal transmission device.
제5도는 본 고안에 따른 주회로환선의 반경에 대한 환선내부의 유기자속의 변화를 나타낸 그래프이다.5 is a graph showing a change in the organic flux in the ring line with respect to the radius of the main circuit ring line according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 주회로환선 2,2a,…,2n : 종속회로환선1: main circuit ring 2, 2a,... , 2n: slave circuit
3 : 유기자속 4a,4b : 주회로환선의 양단자3: organic flux 4a, 4b: both terminals of main circuit ring
5a,5b : 종속회로환선의 양단자 6 : 실리콘기판5a, 5b: Both terminals of slave circuit line 6: Silicon substrate
7 : 절연막 8 : 전류증폭회로7: insulating film 8: current amplifier circuit
11 : 주회로환선의 반경 21 : 종속회로환선의 반경11: radius of main circuit ring 21: radius of subordinate circuit ring
12 : 주회로환선의 폭 22 : 종속회로환선의 폭12: width of main circuit ring 22: width of subordinate circuit line
13 : 주회로환선의 개구부 23 : 종속회로환선의 개구부13 opening of main circuit ring 23 opening of subordinate circuit ring
14 : 주회로환선의 연결선 24 : 종속회로환선의 연결선14: connection line of main circuit ring 24: connection line of subordinate circuit ring
31 : 주회로환선의 원호의 길이 32 : 종속회로환선의 원호의 길이31: Length of arc of main circuit ring 32: Length of arc of subordinate circuit ring
33 : 주회로 및 종속회로환선의 두께33: thickness of main circuit and slave circuit
34 : 주회로환선의 입력선과 출력선 사이의 거리34: distance between input line and output line of main circuit line
35 : 종속회로환선의 입력선과 출력선 사이의 거리35: distance between input line and output line of slave circuit
상기의 목적을 달성하기 위한 본 고안의 비접촉식 신호전달장치는, 주회로환선의 개구부(13)와 연결선(14)을 통해 주회로와 연결된 환선모양의 주회로환선(1)과, 상기 주회로환선(1)의 주위를 동일 평면상에서 둘러싼 구조로, 종속회로환선의 개구부(23)와 연결선(24)를 통해 종속회로에 연결된 종속회로환선(2)을 구성하는 것을 특징으로 한다.The non-contact signal transmission device of the present invention for achieving the above object, the main circuit ring line 1 and the main circuit ring line of the ring shape connected to the main circuit through the opening 13 and the connecting line 14 of the main circuit ring, It is characterized by constituting the subcircuit circuit 2 connected to the subordinate circuit through the opening 23 and the connection line 24 of the subcircuit circuit line in a structure surrounding the periphery of (1) on the same plane.
또한, 본 고안은 반도체기판(6) 위에 형성한 절연막(7)상에 상기 주회로환선(1)과 상기 종속회로환선(2)이 형성되는 것을 특징으로 한다.In addition, the present invention is characterized in that the main circuit ring line 1 and the subordinate circuit ring line 2 are formed on the insulating film 7 formed on the semiconductor substrate 6.
또한, x방향 또는 y방향으로 상기 주회로환선(1) 주위에 다수의 종속회로환선(2a),…,(2n)을 병렬로 배열하여, 주회로의 전기적 신호를 상기 종속회로환선(2a),…,(2n)과 각각 연결된 여러 개의 종속회로에서 병렬처리함을 특징으로 한다.Further, a plurality of subordinate circuit switching lines 2a,... Around the main circuit switching line 1 in the x direction or the y direction. , (2n) are arranged in parallel, and the electrical signals of the main circuit are transferred to the slave circuit line (2a),. It is characterized in that the parallel processing is performed in a number of subordinate circuits respectively connected with, (2n).
또한, 본 고안은 상기 주회로환선(1)의 폭(12)과 상기 종속회로환선(2)의 폭(12)에 도선의 두께(33)를 각각 곱한 값으로, 상기 주회로환선(1)에서 상기 종속회로환선(2)으로 유도전류가 전달될 때, 상기 두 회로환선들이 감당할 수 있는 전력수요를 결정함을 특징으로 한다.In addition, the present invention is a value obtained by multiplying the width 12 of the main circuit ring line 1 and the width 12 of the dependent circuit ring line 2 by the thickness 33 of the conductive line, respectively, and the main circuit ring line 1 When the induced current is transferred to the slave circuit line 2, it is characterized in that it determines the power demand that the two circuit lines can handle.
또한, 본 고안은 상기 주회로환선(1)의 반경(11)과 상기 종속회로환선(2)의 반경(21) 사이의 거리를 짧게 설계하는 것을 특징으로 하고, 상기 주회로환선(1)의 원호의 길이(31)와 겹쳐진 상기 종속회로환선(2)의 원호의 길이(32)를 길게 설계하는 것을 특징으로 한다.In addition, the present invention is characterized in that to design a short distance between the radius 11 of the main circuit ring line 1 and the radius 21 of the subordinate circuit ring line 2, It is characterized in that the length 32 of the arc of the slave circuit line 2 overlapped with the length 31 of the arc is designed to be long.
이하에서는 첨부도면을 참조하여 본 고안에 대하여 상세히 설명한다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
제1도는 비접촉식 신호전달회로의 모식도이다. 제1도에 있어서, 미도시된 주회로환선의 개구부(13)와 그 연결부(14)를 통해 주회로에 연결된 주회로환선(1) 주위를 동일 평면상에서 둘러싼 구조로 제1도에 미도시된 종속회로환선의 개구부(23)와 그 연결부(24)를 통해 종속회로에 연결된 종속회로환선(2)이 있으며, 비접촉식 신호전달회로의 최소단위 구조를 보여주고 있다. 그리고 상기 주회로환선(1)에서의 전기적 신호의 단속효과에 의해 발생하는 상호 인덕턴스가 상기 종속회로환선(2)에 전류를 유기시키는 원리를 나타낸 것으로, 상기 주회로환선(1)을 흐르는 단속전류는 플레밍의 법칙에 의해 유도자속(3)을 발생시키고, 발생한 유도자속(3)은 플레밍의 법칙에 의해 상기 종속회로환선(2)에 유도전류를 흐르게 하므로 전기적으로 접촉되지 않은 구조로서 전기적 신호를 자기적 효과에 의해 전달할 수 있는 것이다.1 is a schematic diagram of a contactless signal transmission circuit. In FIG. 1, a structure not shown in FIG. 1 is formed around the main circuit ring line 1 connected to the main circuit through the opening 13 of the main circuit ring line and the connecting portion 14 of the main circuit line. There is a subcircuit circuit 2 connected to the subordinate circuit through the opening 23 of the subordinate circuit ring and the connection part 24 thereof, and shows the minimum unit structure of the non-contact signal transmission circuit. In addition, the mutual inductance generated by the interruption effect of the electrical signal in the main circuit line 1 shows a principle of inducing a current in the subordinate circuit line 2, and the intermittent current flowing through the main circuit line 1 The induced magnetic flux 3 is generated by Fleming's law, and the induced magnetic flux 3 causes an induced current to flow through the subordinate circuit line 2 by Fleming's law. It can be delivered by magnetic effect.
또한 주회로환선(1)의 내부에 자기장의 세기를 크게 함으로써, 전기적 신호전달의 효과를 크게 할 수 있는데, 이와 같은 목적을 달성하기 위하여, 상기 주회로환선(1)으로 공급되는 전류신호의 크기를 증폭하고자, 상기 주회로환선(1)에 전류증폭회로(8)를 연결하였다. 그리고 상기 전류증폭회로(8)를 구동하기 위한 동작전원(Vcc)과 접지(GND)가 상기 전류증폭회로(8)에 연결되고, 상기 전류증폭회로(8)에서 증폭한 전기적 신호의 신호입력부(IN) 또한 상기 전류증폭회로(8)에 접속되어 있다.In addition, by increasing the strength of the magnetic field inside the main circuit line (1), the effect of the electrical signal transmission can be increased, in order to achieve this purpose, the magnitude of the current signal supplied to the main circuit line (1). In order to amplify, the current amplifier circuit 8 was connected to the main circuit line 1. And the operating power supply (Vcc) and ground (GND) for driving the current amplifier circuit 8 is connected to the current amplifier circuit 8, the signal input unit of the electrical signal amplified by the current amplifier circuit ( IN) is also connected to the current amplifier circuit 8 above.
제2도는 비접촉식 신호전달회로의 복수환선 구조도로서, 주회로환선(1)의 환선수는 임의로 증가시킬 수 있고, 상기 환선수의 증가로 주회로를 흐르는 전류의 단속에 의해 유기되는 자속의 총 크기를 증가시킬 수 있다. 즉, 복수개의 주회로환선(1)에서 유기되는 자속은 비접촉식 신호전달회로의 최소단위구조에서 유기되는 자속의 크기를 환선수의 곱으로 증가시킬 수 있다. 또한 종속회로의 종속회로환선(2)의 수효를 증가시킴으로써 전류전달의 총 크기를 크게 할 수 있으며, 종속회로의 환선수는 x방향으로 확장할 수도 있고, y방향으로 확장할 수도 있다. 이와같은 회로구성 방법은 주회로의 신호를 종속회로에서 병렬로 처리할 수 있음을 나타낸다.2 is a multi-circuit structure diagram of a non-contact signal transmission circuit, in which the round loop of the main circuit line 1 can be arbitrarily increased, and the total magnitude of the magnetic flux induced by the interruption of the current flowing through the main circuit due to the increase of the round loop. Can be increased. That is, the magnetic flux induced in the plurality of main circuit rings 1 may increase the magnitude of the magnetic flux induced in the minimum unit structure of the non-contact signal transmission circuit by the product of the circular bow. In addition, by increasing the number of the subordinate circuit lines 2 of the subordinate circuit, the total size of the current transfer can be increased, and the subcircuit of the subordinate circuit can extend in the x direction or can extend in the y direction. This circuit construction method shows that the signal of the main circuit can be processed in parallel in the slave circuit.
제3도는 본 고안 비접촉식 신호전달장치의 등가회로이다. 제3도에 있어서, 직렬 연결된 여러개의 주회로환선(1)에서 유기되는 자속의 변화가 종속회로환선(2a),…(2n)으로 전류를 유기시키며, 상기 종속회로환선(2a),…,(2n)에서 필요로 하는 전류의 세기는 주회로와 종속회로 사이의 환선수 비에 의한 자속의 변화 크기를 결정할 수 있다. 그리고 상기 주회로환선(1)을 둘러싸고 있는 상기 종속회로환선(2a),…,(2n)의 환선수를 임의로 설정함으로써 병렬구조의 종속회로를 구동할 수 있고, 종속회로의 유도전류 크기는 주회로 전류의 크기에 의해 설정할 수 있다.3 is an equivalent circuit of the present invention contactless signal transmission device. In FIG. 3, the change of the magnetic flux induced in the several main circuit rings 1 connected in series is dependent on the slave circuit lines 2a,... (2n) induces a current, and the slave circuit line 2a,... The strength of the current required by, (2n) can determine the magnitude of the change of magnetic flux due to the ring ratio between the main circuit and the slave circuit. And the dependent circuit ring 2a surrounding the main circuit ring 1,... By arbitrarily setting the round loop of (2n), the slave circuit of the parallel structure can be driven, and the magnitude of the induced current of the slave circuit can be set by the magnitude of the main circuit current.
제4도는 본 고안 비접촉식 신호전달소자의 평면도 및 단면도로서, 주회로환선(1)의 양단자사이를 흐르는 전류의 단속에 의해 유기되는 자속의 변화는 종속회로환선(2)의 양단자사이로 주회로환선(1)의 전류방향과 반대방향의 전류를 유기시킨다. 상기 주회로환선(1)을 주회로와 전기적으로 연결하기 위해 주회로환선의 개구부(13)와 그 연결부(14)을 구비하며, 상기 종속회로환선(2) 역시 종속회로와 전기적으로 연결하기 위해 종속회로환선의 개구부(23)와 그 연결선(24)을 구비한다.4 is a plan view and a cross-sectional view of a non-contact signal transmission device of the present invention, wherein a change in magnetic flux induced by an interruption of current flowing between both terminals of the main circuit line 1 is carried out between both terminals of the subordinate circuit line 2. The current in the opposite direction to the current direction of the ring line 1 is induced. In order to electrically connect the main circuit line 1 with the main circuit, an opening 13 and a connecting portion 14 of the main circuit line are provided, and the cascade circuit line 2 is also electrically connected to the subordinate circuit. The opening 23 and the connection line 24 of the slave circuit ring are provided.
또한 주회로환선(1)에서 종속회로환선(2)으로 유도되는 유도전류를 전달할 때 감당할 수 있는 전력수요를 결정하는 주요변수는, 주회로환선의 반경(11)과 종속회로환선의 반경(21)을 각각 상기 주회로 및 종속회로환선의 두께(33)와 곱한 값이 되며, 상기 종속회로환선의 반경(21)에서 주회로환선의 반경(11)을 뺀 거리가 작으면 작을수록 유도자속(3)의 변화에 의한 유도전류의 손실을 줄일 수 있으며, 이것이 유도전류의 손실을 줄일 수 있는 변수로 된다. 또 상기 주회로환선(1)의 입력선과 출력선 사이의 거리(34)는 좁을수록 환선에서의 자속의 크기는 크게 되지만 상기 주회로환선의 입출력선(34) 사이에서의 전자기적 상호효과에 의해 전력손실 또한 크게 되는 상쇄관계에 있다. 종속회로환선(2)의 입력선과 출력선사이의 거리(35)도 좁을수록 유도전류의 크기를 크게할 수 있으며, 주회로환선(1)과 상기 주회로환선(1)의 주위를 둘러싸고 있는 종속회로환선(2)의 크기 즉, 주회로환선의 원호의 길이(31)과 겹쳐진 종속회로환선의 원호의 길이(32)를 크게 설계할수록 전기적 신호전달 크기는 증가하게 된다.In addition, the main variables that determine the power demand that can be handled when transferring the induced current induced from the main circuit line (1) to the slave circuit line (2), is the radius of the main circuit line 11 and the radius of the subsidiary circuit line (21). ) Is multiplied by the thickness 33 of the main circuit and the slave circuit ring, respectively, and the smaller the distance obtained by subtracting the radius 11 of the main circuit ring from the radius 21 of the slave circuit ring, the smaller the induction flux ( The loss of induced current due to the change of 3) can be reduced, and this becomes a variable to reduce the loss of induced current. In addition, the smaller the distance 34 between the input line and the output line of the main circuit ring 1 is, the larger the magnitude of magnetic flux in the ring line is, but due to the electromagnetic interaction between the input and output lines 34 of the main circuit ring line. Power loss also has a large offset. The narrower the distance 35 between the input line and the output line of the slave circuit 2, the greater the magnitude of the induced current, and the slave circuit surrounding the main circuit 1 and the main circuit 1 As the size of the circular line 2, that is, the length 32 of the circular arc of the subordinate circuit circular line overlapping the length 31 of the circular arc of the main circuit circular line, is increased, the electrical signal transmission size increases.
상기 회로환선 구조를 반도체 집적회로에 적용하기 위하여 제4도의 A-A선 단면도 또한 제4도에 나타내었다. 전류환선 구조를 반도체 집적회로에 적용하기 위하여 반도체기판(6) 위에 절연막(7)을 형성시킨 다음, 도체인 금속막을 전면에 도포한 후 주회로환선(1)과 종속회로환선(2)만을 제외한 나머지 부분을 제거한다. 이와 같이 하면 반도체 집적회로소자 제조공정으로 본 고안 비접촉식 신호전달장치를 제조할 수 있다.A cross-sectional view taken along line A-A of FIG. 4 is also shown in FIG. 4 to apply the circuit ring structure to a semiconductor integrated circuit. In order to apply the current circuit structure to the semiconductor integrated circuit, an insulating film 7 is formed on the semiconductor substrate 6, and then a metal film, which is a conductor, is coated on the entire surface, and only the main circuit circuit 1 and the subordinate circuit circuit 2 are excluded. Remove the rest. In this way, the non-contact signal transmission device of the present invention can be manufactured by a semiconductor integrated circuit device manufacturing process.
제5도는 본 고안에 따른 주회로환선의 반경(11)에 대한 환선내부의 유기자속의 변화를 그래프로 나타낸 것이다. 상기 제5도로부터 설명한 바와 같이 상기 주회로환선의 반경(11)이 작아지면 작아질수록 국소부위에서 발생하는 자속의 세기 즉 유기자속(B, magnetic flux)이 증가하는 반비례 관계에 있으므로, 반도체 집적회로 제조공정을 이용하여 상기 주회로환선의 반경(11)이 작도록 제조하면 주회로환선(1)에서의 작은 전류 구동조건에서도 종속회로환선(2)으로 전달되는 전류신호의 크기가 증가할 것으로 기대된다.5 is a graph showing the change of the organic magnetic flux inside the ring line with respect to the radius 11 of the main circuit ring line according to the present invention. As described with reference to FIG. 5, the smaller the radius 11 of the main circuit ring is, the smaller the radius 11 is, and thus the intensity of the magnetic flux generated at the localized portion, i.e., the magnetic flux B, is increased in inverse proportion. If the radius 11 of the main circuit line is manufactured using a circuit manufacturing process, the magnitude of the current signal transmitted to the slave circuit line 2 will increase even under a small current driving condition in the main circuit line 1. It is expected.
이상에서 상세히 설명한 바와 같이, 본 고안의 비접촉식 신호전달장치를 사용하면, 주회로환선의 반경을 반도체 집적회로 제조공정을 이용하여 작게 설계함으로서 비접촉식으로 전기적 신호전달 효과를 크게할 수 있고, 전기적으로 분리 절연된 두개 이상의 전자회로를 동시에 구성하여야 할 필요가 있을 때 유용하게 적용할 수 있는 장점뿐만 아니라 정전기방지 및 노이즈를 방지하면서 전기적 신호를 비접촉식으로 전달할 수 있는 효과가 있다.As described in detail above, by using the non-contact signal transmission device of the present invention, by designing a small radius of the main circuit ring using a semiconductor integrated circuit manufacturing process, it is possible to increase the electrical signal transmission effect in a non-contact manner, electrically separated When there is a need to configure two or more isolated electronic circuits at the same time, there is an advantage that can be usefully applied, as well as the ability to transmit electrical signals in a non-contact manner while preventing antistatic and noise.
Claims (5)
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| KR2019950046026U KR200181806Y1 (en) | 1995-12-22 | 1995-12-22 | Non-contact type signal transferring device |
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| KR2019950046026U KR200181806Y1 (en) | 1995-12-22 | 1995-12-22 | Non-contact type signal transferring device |
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| KR20190110217A (en) | 2018-03-20 | 2019-09-30 | 한국과학기술원 | Bidet apparatus to prevent water splashing mounted on the toilet seat |
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| KR20190110217A (en) | 2018-03-20 | 2019-09-30 | 한국과학기술원 | Bidet apparatus to prevent water splashing mounted on the toilet seat |
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