KR200177494Y1 - Cooling apparatus for wafer backside - Google Patents

Cooling apparatus for wafer backside Download PDF

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Publication number
KR200177494Y1
KR200177494Y1 KR2019950002672U KR19950002672U KR200177494Y1 KR 200177494 Y1 KR200177494 Y1 KR 200177494Y1 KR 2019950002672 U KR2019950002672 U KR 2019950002672U KR 19950002672 U KR19950002672 U KR 19950002672U KR 200177494 Y1 KR200177494 Y1 KR 200177494Y1
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pressure
cooling
cooling gas
measuring means
supply
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KR2019950002672U
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KR960029718U (en
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전병섭
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김영환
현대반도체주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

본 고안은 반도체 제조장치의 웨이퍼 뒷면 냉각장치로써,The present invention is a wafer backside cooling device of a semiconductor manufacturing apparatus,

냉각가스 주입부에 연결되고, 공급되는 냉각가스의 압력을 조절하는 공급가스 압력 조절수단이 형성된 공급라인 냉각가스 주입부에 연결되고, 개폐밸브가 형성되어 냉각중에는 닫히고 냉각가스의 배기시에는 열리는 배기라인; 공급라인에 형성되는 제1압력측정수단과, 주입부와 개폐밸브 사이의 배기라인에 형성되는 제2압력측정수단; 냉각가스 압력이 설정되고, 제1,제2압력측정수단의 측정치를 받아 공급가스압력 조절수단을 제어하는 제어수단을 포함하여 이루어진다.Connected to the cooling gas inlet unit, connected to the supply line cooling gas inlet unit having a supply gas pressure adjusting means for regulating the pressure of the supplied cooling gas, an on-off valve is formed to close during cooling and open when exhausting the cooling gas line; First pressure measuring means formed in a supply line, and second pressure measuring means formed in an exhaust line between the injection portion and the on / off valve; The cooling gas pressure is set, and includes control means for receiving the measured values of the first and second pressure measuring means and controlling the supply gas pressure adjusting means.

여기에서 제어수단은, 1차로 제1압력측정수단의 측정치를 받아 공급가스 압력 조절수단을 제어하고, 2차로 제1압력측정수단과 제2압력측정수단의 측정치를 비교하여 공급가스 압력 조절수단을 제어하도록 형성되며, 공급라인과 배기라인은, 냉각가스 주입부에 각기 독립적으로 연결된다.Herein, the control means receives the measured value of the first pressure measuring means firstly to control the supply gas pressure adjusting means, and secondly compares the measured values of the first pressure measuring means and the second pressure measuring means to determine the supply gas pressure adjusting means. It is formed to control, and the supply line and the exhaust line, each connected to the cooling gas injection unit independently.

Description

반도체 제조장치의 웨이퍼 뒷면 냉각장치Wafer backside cooling device of semiconductor manufacturing equipment

제 1 도는 종래의 반도체 제조장치의 웨이퍼 뒷면 냉각장치를 도시한 도면.1 is a view showing a wafer backside cooling apparatus of a conventional semiconductor manufacturing apparatus.

제 2 도는 본 고안의 반도체 제조장치의 웨이퍼 뒷면 냉각장치를 도시한 도면.2 is a view showing a wafer backside cooling apparatus of the semiconductor manufacturing apparatus of the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

11, 21 : 진공챔버 12, 22 : 웨이퍼11, 21: vacuum chamber 12, 22: wafer

13, 23 : 클램프 14, 24 : 주입부13, 23: clamp 14, 24: injection part

15, 25 : 공급라인 16, 26 : 배기라인15, 25: supply line 16, 26: exhaust line

15a, 25a : 공급가스 압력 조절수단(유피씨 : Unit Pressur Controller)15a, 25a: supply gas pressure adjusting means (PU: Unit Pressur Controller)

15b : 씨엠(Capacitance Manometer)15b: Capacitance Manometer

25b : 제1압력측정수단(Capacitance Manometer)25b: Capacitance manometer

16a, 26a : 개폐밸브 26 : 바이패스밸브16a, 26a: on-off valve 26: bypass valve

26b : 제2압력측정수단(Capacitance Manometer)26b: Second pressure measurement means (Capacitance Manometer)

17, 27 : 제어부 28 : 표시부17, 27: control unit 28: display unit

본 고안은 반도체 제조장치의 웨이퍼 뒷면 냉각장치에 관한 것으로, 특히 냉각가스 압력을 적정상태로 유지하여 냉각 저하에 따른 웨이퍼 손상을 방지하기에 적당하도록 한 반도체 제조장치의 웨이퍼 뒷면 냉각장치에 관한 것이다.The present invention relates to a wafer backside cooling apparatus of a semiconductor manufacturing apparatus, and more particularly, to a wafer backside cooling apparatus of a semiconductor manufacturing apparatus adapted to maintain the cooling gas pressure in an appropriate state and to prevent wafer damage due to a decrease in cooling.

제 1 도는 종래의 반도체 제조장치의 웨이퍼 뒷면 냉각장치를 도시한 도면으로, 도면을 참조하여 설명하면 다음과 같다.1 is a view showing a wafer backside cooling apparatus of a conventional semiconductor manufacturing apparatus, which will be described below with reference to the drawings.

제 1 도에 도시한 바와 같이, 종래의 반도체 제조장치의 웨이퍼 뒷면 냉각장치는, 진공챔버(11) 내에 웨이퍼(12)가 클램프(13) 등으로 고정되어 안착되고, 웨이퍼(12) 뒷면으로 냉각가스를 주입하기 위한 주입부(14)에 냉각가스 공급라인(15)과 배가라인(16)이 연결되어 형성된다.As shown in FIG. 1, in the wafer backside cooling apparatus of the conventional semiconductor manufacturing apparatus, the wafer 12 is fixed in the vacuum chamber 11 by the clamp 13 or the like, and is cooled to the backside of the wafer 12. The cooling gas supply line 15 and the drainage line 16 are connected to the injection unit 14 for injecting the gas.

공급라인(15)에는, 유피씨(Unit Pressur Controller)(15a)와 씨엠(Capacitance Manometer)(15b)이 형성되는 데, 공급되는 냉각가스 압력을 씨엠(15b)이 측정하여 제어수단(17)으로 입력하면 제어수단(17)은 설정압력과 비교하여 유피씨(15a)의 열림정도를 제어하개 된다.In the supply line 15, a unit pressur controller 15a and a capacitance manometer 15b are formed, and the cooling gas pressure supplied to the control unit 17 is measured by the CM 15b. Upon input, the control means 17 controls the opening degree of the seedlings 15a compared with the set pressure.

또한 배기라인(16)에는, 냉각 중에는 닫히고 배기중에는 열리는 개폐밸브(16a)가 형성된다.In the exhaust line 16, an on-off valve 16a that is closed during cooling and opens during exhaust is formed.

따라서, 종래의 장치는 배기라인(16)에 형성된 개페밸브(16a)가 닫힌 상태에서 냉각가스의 압력을 설정하고 냉각가스를 공급하면 주입부(14), 공급라인(15) 및 배기라인(16)에 냉각가스가 채워진다.Therefore, the conventional apparatus sets the pressure of the cooling gas in the state where the open valve 16a formed in the exhaust line 16 is closed and supplies the cooling gas to the injection unit 14, the supply line 15, and the exhaust line 16. ) Is filled with cooling gas.

이때 냉각가스 공급 압력치를 씨엠(15b)이 읽고, 제어수단(17)은 측정치와 설정치를 비교하여 유피씨(15a)의 열림정도를 조절하게 된다. 즉, 측정치가 설정치보다 크면 유피씨(15a)가 닫히고, 측정치가 설정치보다 작으면 유피씨(15a)가 열려 플로우 량을 조절하게 된다.At this time, the cooling gas supply pressure value is read by the CM 15b, and the control means 17 compares the measured value and the set value to adjust the opening degree of the UVC 15a. In other words, if the measured value is larger than the set value, the UVC 15a is closed. If the measured value is smaller than the set value, the UVC 15a is opened to adjust the flow amount.

배기시에는, 냉각가스의 공급을 중단하고 배기라인(16)의 개폐밸브(16a)를 일어 냉각가스를 배기시킨다.At the time of exhaust, the supply of cooling gas is stopped and the open / close valve 16a of the exhaust line 16 is raised to exhaust the cooling gas.

그런데 종래의 장치는, 공급되어진 냉각가스가 챔버(11) 내 웨이퍼(12)의 놓임상태 불량 등으로 인해 챔버(11)쪽으로 빠져나가면, 공급라인(15)에 형성된 씨엠(15b)에서 냉각가스 압력을 측정하고, 측정치에 따라 유피씨(15a)가 더 열려 냉각가스를 보충하도록 되어 있으나, 냉각가스의 압력을 측정하는 씨엠(15b)이 공급라인에만 형성되어 있고, 또한 주입부(14)에 공급라인과(15)과 배기라인(16)이 공통으로 연결되어 있음으로써, 씨엠(15b)의 측정치가 주입부(14)의 가스 압력과는 차이가 있게 되어, 실제로는 냉각효과가 떨어지고, 그로 인해 웨이퍼(12)가 손상을 받게 되는 문제점이 있다. 또한 냉각효과 저하로 인한 웨이퍼 손상이 발생한 후 조치를 취하게 되는 사후조치만을 할 수 있고 사전에 예방할 방법이 없었다.However, in the conventional apparatus, when the supplied cooling gas is discharged toward the chamber 11 due to a defective state of the wafer 12 in the chamber 11, the cooling gas pressure in the CM 15b formed in the supply line 15 is reduced. According to the measurement value, the milk seed 15a is further opened to replenish the cooling gas, but the CM 15b for measuring the pressure of the cooling gas is formed only in the supply line, and is also supplied to the injection portion 14. Since the line 15 and the exhaust line 16 are connected in common, the measured value of the CM 15b is different from the gas pressure of the injection portion 14, and in fact, the cooling effect is lowered, thereby There is a problem that the wafer 12 is damaged. In addition, it is possible only to take post-action measures to take action after wafer damage caused by the decrease in cooling effect, and there was no preventive method.

본 고안은 이와 같은 종래의 장치의 문제점을 해결하기 의해 안출된 것으로, 공급라인 뿐만 아니라 배기라인에도 압력측정수단을 설치하여, 공급라인과 배기라인에서 냉각가스 압력을 측정하고, 또한 두 측정치를 비교하여 냉각가스의 공급압력을 제어하도록 함으로써, 사전에 냉각불량으로 인한 웨이퍼의 손상을 방지하여 생산수율을 향상시키는 반도체 제조장치의 웨이퍼 뒷면 냉각장치를 제공하는 데 목적이 있다.The present invention was devised to solve the problems of the conventional apparatus, and a pressure measuring means is installed not only on the supply line but also on the exhaust line to measure the cooling gas pressure in the supply line and the exhaust line, and also compare the two measurements. By controlling the supply pressure of the cooling gas, it is an object of the present invention to provide a wafer backside cooling apparatus of a semiconductor manufacturing apparatus that prevents damage to the wafer due to poor cooling in advance and improves the production yield.

상술한 목적을 달성하기 위한 본 고안의 반도체 제조장치의 웨이퍼 뒷면 냉각장치는, 냉각가스 구입부에 연결되고, 공급되는 냉각가스의 압력을 조절하는 공급가스 압력 조절수단이 형성된 공급라인 냉각가스 주입부에 연결되고, 개폐밸브가 형성되어 냉각층에는 닫히고 냉각가스의 배기시에는 열리는 배기라인, 공급라인에 형성되는 제1압력측정수단과, 주입부와 개폐밸브 사이의 배기라인에 형성되는 제2압력측정수단, 냉각가스 압력이 설정되고, 제1, 제2압력측정수단의 측정치를 받아 공급가스압력 조절수단을 제어하는 제어수단을 포함하여 이루어진다.The wafer backside cooling apparatus of the semiconductor manufacturing apparatus of the present invention for achieving the above object, the supply line cooling gas injection unit is connected to the cooling gas purchase unit, the supply gas pressure adjusting means for adjusting the pressure of the supplied cooling gas A first pressure measuring means formed in an exhaust line, a supply line, and a second pressure formed in an exhaust line between the injection portion and the open / close valve The measuring means and the cooling gas pressure are set, the control means for receiving the measured values of the first, second pressure measuring means to control the supply gas pressure adjusting means.

여기에서 제어수단은, 1차로 제1압력축정수단의 측정치를 받아 공급가스 압력 조절수단을 제어하고, 2차로 제1압력측정수단과 제2압력측정수단의 측정치를 비교하여 공급가스 압력 조절수단을 제어하도록 형성되며, 공급라인과 배기라인은, 냉각가스 주입부에 각기 독립적으로 연결되고, 개폐밸브에는, 바이패스(Bypass)밸브가 추가 설치된다.Here, the control means receives the measured value of the first pressure setting means firstly to control the supply gas pressure adjusting means, and secondly compares the measured values of the first pressure measuring means and the second pressure measuring means to determine the supply gas pressure adjusting means. It is formed to control, the supply line and the exhaust line is connected to the cooling gas injection unit, respectively, and the on-off valve, the bypass (Bypass) valve is further installed.

또한, 제어수단에 표시부가 추가 설치되어서, 각 압력측정수단의 측정치 및 제어수단의 제어치를 표시하도록 한다.In addition, a display unit is additionally provided in the control means to display the measured value of each pressure measuring means and the control value of the control means.

제 2 도는 본고안의 반도체 제조장치의 웨이퍼 뒷면 냉각장치를 도시한 도면으로, 도면을 참조하여 본 고안의 일예를 상세히 설명하면 다음과 같다.2 is a view showing a wafer backside cooling apparatus of the semiconductor manufacturing apparatus of the present disclosure, with reference to the drawings an example of the present invention in detail as follows.

진공챔버(21) 내에 클램프(23)로 고정되어 안착된 웨이퍼(22)의 뒷면으로 냉각가스를 주입하는 주입부(24)에, 각기 독립적으로 연결되는 냉각가스 공급라인(25)과 배기라인(26)이 형성된다.The cooling gas supply line 25 and the exhaust line, each independently connected to the injection unit 24 for injecting the cooling gas into the rear surface of the wafer 22 fixed and clamped in the vacuum chamber 21, are seated. 26) is formed.

공급라인(25)에는, 공급되는 냉각가스의 압력을 조절하는 공급가스 압력 조절수단(25a)으로 유피씨(Unit Pressur Controller)와, 공급가스 압력을 측정하는 제1압력측정수단(25b)으로 씨엠(Capacitance Manometer)이 형성된다.In the supply line 25, the unit press controller as a supply gas pressure adjusting means 25a for adjusting the pressure of the supplied cooling gas, and the first pressure measuring means 25b for measuring the supply gas pressure. (Capacitance Manometer) is formed.

배기 라인(26)에는, 냉각중에는 닫히고 배기기시에는 열리는 개폐밸브(26a)와, 주입부(24)와 개폐밸브(26a) 사이에 가스 압력을 측정하는 제2압력측정수단(26b)으로 씨엠(Capacitance Manometer)이 형성된다.In the exhaust line 26, the on / off valve 26a, which is closed during cooling and opened at the time of exhaust, and the second pressure measuring means 26b for measuring the gas pressure between the injection portion 24 and the on / off valve 26a, Capacitance Manometer is formed.

또한 제1압력측정수단(25b)과 제2압력측정수단(26b)에 연결되고, 공급라인에 형성된 공급가스 압력 조절수단(25a)인 유피씨를 조절하는 제어수단(27)이 형성된다. 여기에서 제어수단(27)은, 1차로 제1압력측정수단(25b)의 측정치를 받아 상기 공급가스 압력 조절수단(25a)을 제어하고, 2차로 제1압력측정수단(25b)과 제2압력측정수단(26b)의 측정치를 비교하여 공급가스 압력 조절수단(25a)을 제어한다.In addition, the control means 27 is connected to the first pressure measuring means 25b and the second pressure measuring means 26b, and controls the yuppi seed which is the supply gas pressure adjusting means 25a formed in the supply line. Here, the control means 27 receives the measurement value of the 1st pressure measuring means 25b firstly, and controls the said supply gas pressure adjusting means 25a, and the 2nd pressure 1st pressure measuring means 25b and a 2nd pressure secondly. The measured value of the measuring means 26b is compared to control the feed gas pressure adjusting means 25a.

개폐밸브(26a)에는 바이패스(Bypass)밸브(26a')가 추가 설치되어, 필요시 냉각가스를 배기 하도록 형성된다.The bypass valve 26a 'is additionally installed in the on / off valve 26a so as to exhaust the cooling gas when necessary.

그리고, 제어수단(27)에는 표시부(28)가 연결되어 각 압력측정수단(25b, 26b)의 측정치 및 제어수단(27)의 제어치를 표시하도록 하면 좋다.In addition, the display unit 28 may be connected to the control means 27 to display the measured values of the pressure measuring means 25b and 26b and the control value of the control means 27.

따라서 본 고안의 반도체 제조장치의 웨이퍼 뒷면 냉각장치의 동작은, 개폐밸브(26a, 26a')를 닫은 상태에서 냉각가스 압력을 설정하고 냉각가스를 공급하면 주입부(24), 공급라인(25) 및 배기라인(26)에 냉각가스가 충전된다.Therefore, the operation of the wafer backside cooling apparatus of the semiconductor manufacturing apparatus of the present invention, when the opening and closing valves (26a, 26a ') is set to the cooling gas pressure and supply the cooling gas injection unit 24, supply line 25 And the exhaust line 26 is filled with the cooling gas.

이때, 1차로 제1압력측정수단(25b)인 씨엠이 공급되는 냉각가스 압력을 읽고, 제어수단(27)은 측정치에 따라 공답가스 압력 조절수단(25a)인 유피씨를 조절하여 설정된 압력으로 공급하도록 하고, 2차로 제2압력측정수단(26b)인 씨엠이 배기라인(26) 쪽에서 냉각가스의 압력을 측정하고, 제어수단(27)은 제1압력측정수단(25b)과 제2압력측정수단(26b)의 각 측정치를 비교하여 공급가스 압력 조절수단(25a)인 유피씨를 조절하게 된다.At this time, the first reading of the cooling gas pressure supplied to the first pressure measuring means (25b) of the CM, the control means 27 to control the supplied gas pressure control means (25a) according to the measured value to supply at a set pressure In addition, the second pressure measuring means 26b of the second measuring unit 26 measures the pressure of the cooling gas at the exhaust line 26, and the control means 27 includes the first pressure measuring means 25b and the second pressure measuring means ( Each measurement value of 26b) is compared to adjust the skin seed, which is the supply gas pressure adjusting means 25a.

또한 표시부(28)로 측정치 및 제어치를 표시하게 하여, 냉각상태를 파악하고 이상 발생을 사전에 예방할 수 있게 된다.In addition, the display unit 28 allows measurement and control values to be displayed so that the cooling state can be grasped and abnormal occurrence can be prevented in advance.

냉각가스 압력이 설정치보다 높은 경우 등과 같은 냉각가스의 배기가 필요시에는, 개폐밸브(26a)에 형성된 바이패스(Bypass)밸브(26a')를 일어 배기를 시키면서 압력을 조절하면 된다.When the exhaust gas of the cooling gas, such as when the cooling gas pressure is higher than the set value, is required, the pressure may be adjusted while raising the bypass valve 26a 'formed in the open / close valve 26a to exhaust the gas.

공정이 종료하여 냉각가스의 배기시에는, 냉각가스의 공급을 중단하고 배기라인(26)의 개페밸브(26a)를 열어 냉각가스를 배기시킨다.When the process is finished and the cooling gas is exhausted, the supply of the cooling gas is stopped and the open valve 26a of the exhaust line 26 is opened to exhaust the cooling gas.

본 고안은 다음과 같은 개선효과가 있다.The present invention has the following improvement effect.

본 고안의 반도체 제조장치의 웨이퍼 뒷면 냉각장치는, 공급라인(25)의 냉각가스 압력을 측정하여 공급 냉각가스의 압력을 조절하는 종래와 장치와는 달리, 주입부(24)에 각각 독립적으로 연결된 공급라인(25)과 배기라인(26)의 냉각가스 압력을 측정, 비교하여 냉각가스의 압력을 조절하게 됨으로써, 웨이퍼 뒷면으로 주입되는 냉각가스의 압력을 정확하게 측정하여 적정하게 유지할 수 있고, 또한 측정치와 제어치를 표시하게 함으로써 이상 발생 유무를 체크하여 사전에 웨이퍼 손상을 방지할 수 있어 생산수율을 향상시키는 개선효과가 있다.The wafer backside cooling apparatus of the semiconductor manufacturing apparatus of the present invention, unlike the conventional and apparatus for adjusting the pressure of the supply cooling gas by measuring the pressure of the cooling gas of the supply line 25, each connected to the injection unit 24 independently By measuring and comparing the cooling gas pressures of the supply line 25 and the exhaust line 26, the pressure of the cooling gas is adjusted to accurately measure and maintain the pressure of the cooling gas injected to the back side of the wafer. By displaying the and control value, it is possible to prevent wafer damage in advance by checking for abnormality, thereby improving the production yield.

Claims (5)

챔버(21) 내에 안착된 웨이퍼(22)의 뒷면에 냉각가스를 주입하는 반도체 제조장치의 웨이퍼 뒷면 냉각장치로써, 냉각가스 주입부(24)에 연결되고, 공급되는 냉각가스의 압력을 조절하는 공급가스 압력조절수단(25a)이 형성된 공급라인(25), 상기 냉각가스 주입부(24)에 연결되고, 개폐밸브(26a)가 형성되어 냉각중에는 닫히고 냉각가스의 배기시에는 열리는 배기라인(26), 상기 공급라인(25)에 형성되는 제1압력측정수단(25b)과, 상기 주입부(24)와 개폐밸브(26a) 사이의 배기라인(26)에 형성되는 제2압력측정수단(26b) 냉각가스 압력이 설정되고, 상기 제1, 제2압력측정수단(25b, 26b)의 측정치를 받아 상기 공급가스압력 조절수단(25a)을 제어하는 제어수단(27)을 포함하여 이루어진 반도체 제조장치의 웨이퍼 뒷면 냉각장치.A wafer back side cooling apparatus of a semiconductor manufacturing apparatus for injecting a cooling gas into the back side of the wafer 22 seated in the chamber 21, which is connected to the cooling gas injection section 24 and supplies a pressure to adjust the pressure of the supplied cooling gas. An exhaust line 26 connected to the supply line 25 having the gas pressure regulating means 25a and the cooling gas injector 24 formed therein, and an opening / closing valve 26a formed to close during cooling and open when exhausting the cooling gas. The first pressure measuring means 25b formed in the supply line 25 and the second pressure measuring means 26b formed in the exhaust line 26 between the injection part 24 and the on-off valve 26a. And a control means (27) for setting the cooling gas pressure and controlling the supply gas pressure adjusting means (25a) by receiving the measured values of the first and second pressure measuring means (25b, 26b). Wafer backside chiller. 제 1 항에 있어서, 상기 제어수단(27)은, 1차로 상기 제1압력측정수단(25b)의 측정치를 받아 상기 공급가압력 조절수단(25a)을 제어하고, 2차로 상기 제1압력측정수단(25b)과 제2압력측정수단(26b)의 측정치를 비교하여 상기 공급가스 압력 조절수단(25a)을 제어하는 것이 특징인 반도체 제조장치의 웨이퍼 뒷면 냉각장치.2. The control means (27) according to claim 1, wherein the control means (27) first receives the measurement value of the first pressure measuring means (25b) to control the supply pressure adjusting means (25a), and secondly the first pressure measuring means ( 25b) and the measured value of the second pressure measuring means (26b) to control the supply gas pressure adjusting means (25a) characterized in that the cooling apparatus for the wafer back side of the semiconductor manufacturing apparatus. 제 1 항 또는 제 2 항에 있어서, 상기 공급라인(25)과 배기라인(26)은, 상기 냉각가스 구입부(24)에 각기 독립적으로 연결된 것이 특징인 반도체 제조장치의 웨이퍼 뒷면 냉각장치.The apparatus of claim 1 or 2, wherein the supply line (25) and the exhaust line (26) are independently connected to the cooling gas purchase unit (24). 제 1 항 또는 제 2 항에 있어서, 상기 개폐밸브(26a)에는, 바이패스(Bypass)밸브(26a')가 추가 설치된 것이 특징인 반도체 제조장치의 웨이퍼 뒷면 냉각장치.The wafer backside cooling device according to claim 1 or 2, wherein a bypass valve (26a ') is additionally provided in said open / close valve (26a). 제 1 항 또는 제 2 항에 있어서, 상기 제어수단(27)에 표시부(28)가 추가 설치되어서, 상기 각 압력측정수단(25b, 26b)의 측정치 및 제어수단(27)의 제어치를 표시하는 것이 특징인 반도체 제조장치의 웨이퍼 뒷면 냉각장치.The display unit 28 is provided in the said control means 27, and the measurement value of each said pressure measuring means 25b and 26b, and the control value of the control means 27 are displayed. Cooling device for wafer back side of semiconductor manufacturing apparatus.
KR2019950002672U 1995-02-18 1995-02-18 Cooling apparatus for wafer backside KR200177494Y1 (en)

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