KR200156812Y1 - Lpcvd tube - Google Patents
Lpcvd tube Download PDFInfo
- Publication number
- KR200156812Y1 KR200156812Y1 KR2019970001407U KR19970001407U KR200156812Y1 KR 200156812 Y1 KR200156812 Y1 KR 200156812Y1 KR 2019970001407 U KR2019970001407 U KR 2019970001407U KR 19970001407 U KR19970001407 U KR 19970001407U KR 200156812 Y1 KR200156812 Y1 KR 200156812Y1
- Authority
- KR
- South Korea
- Prior art keywords
- tube
- inner tube
- vapor deposition
- chemical vapor
- pressure chemical
- Prior art date
Links
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims abstract description 23
- 239000012495 reaction gas Substances 0.000 claims abstract description 10
- 239000007789 gas Substances 0.000 claims description 18
- 239000000376 reactant Substances 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 13
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000011109 contamination Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
Abstract
본 고안은 저압 화학기상증착 장비의 튜브에 관한 것으로서, 종래 인너튜브 내부의 고열에 의해 롱노즐의 방출부가 변형되어 웨이퍼를 수납하는 보트가 인너튜브의 내부에서 상하이동시 보트와 룽노즐의 방출부가 충돌하여 룽노즐이 파손됨에 의해 웨이퍼의 표면이 오염되고 장비의 수명이 단축되는 문제점이 있었던 것에 착안하여 인너튜브의 내측에 외부에서 유입되는 반응가스가 통과하는 공급관으로 부터 반응가스를 공급받아 인너튜브의 내부로 방출하는 방출관을 일체로 형성하므로써 상기한 바와 같은 문제점을 해소할 수 있도록 한 것이다.The present invention relates to a tube of a low pressure chemical vapor deposition equipment, and the discharge portion of the long nozzle is deformed by the high temperature inside the inner tube, and the boat accommodating the wafer collides with the discharge portion of the boat and the long nozzle simultaneously in the inner tube. Therefore, the surface of the wafer is contaminated by the damage of the long nozzle and the life of the equipment is shortened. Therefore, the reaction gas is supplied from the supply pipe through which the reaction gas flows from the inside of the inner tube. It is possible to solve the above problems by integrally forming the discharge tube to be discharged to the inside.
Description
본 고안은 저압 화학기상증착 장비의 튜브에 관한 것으로서, 특히 포스핀(phosphine, PH3) 가스를 인너튜브의 내부로 투입하기 위한 길다란 노즐인 롱노즐이 일체로 형성된 인너튜브를 구비하도록 하므로써 보트의 상하이동시 튜브 내부의 고열에 의해 변형된 롱노즐이 보트와 부딪혀 파손되는 것을 방지할 수 있는 저압 화학기상증착 장비의 튜브에 관한 것이다.The present invention relates to a tube of low pressure chemical vapor deposition equipment, and in particular, a long nozzle, which is a long nozzle for injecting phosphine (PH3) gas into the inner tube, has an inner tube formed integrally with a long nozzle. The present invention relates to a tube of a low pressure chemical vapor deposition apparatus capable of preventing a long nozzle deformed by a high temperature inside a tube from colliding with a boat and being damaged.
저압 화학기상증착 장비는 튜브내부의 압력을 저압으로 유지한 상태에서 웨이퍼를 수납하는 보트를 튜브의 내부에 장착하고 반응가스와 분위기가스를 튜브의 내부로 공급하여 웨이퍼의 표면에서 화학반응을 일으켜 박막을 형성하는 장비를 말한다.Low pressure chemical vapor deposition equipment is equipped with a boat to accommodate the wafer while keeping the pressure inside the tube at a low pressure inside the tube and supply the reaction gas and atmosphere gas into the tube to cause a chemical reaction on the surface of the wafer to produce a thin film Speaks equipment to form.
종래의 저압 화학기상증착 장비의 튜브 구조를 개략적으로 보인 종단면도인 제1도에 도시한 바와 같이, 종래의 저압 화학기상증착 장비의 튜브는 내측에 있는 튜브인 인너튜브(1)와 외측에 있는 튜브인 아우터튜브(2)를 포함하여 구성된다.As shown in FIG. 1, which is a longitudinal sectional view schematically showing the tube structure of a conventional low pressure chemical vapor deposition apparatus, the tube of the conventional low pressure chemical vapor deposition equipment is located on the inner tube 1 and the outer tube. The outer tube 2 which is a tube is comprised.
상기 인너튜브(1)의 내측에는 웨이퍼(미도시)를 수납하고 있는 보트(3)가 상하로 이동가능하게 설치되며, 상기 아우터튜브(2)의 외측에는 튜브내부의 온도를 화학반응이 일어날 수 있는 고온으로 유지하기 위한 발열체(4)가 형성되어 있다.Inside the inner tube 1, a boat 3 containing a wafer (not shown) is installed to be movable upward and downward, and a chemical reaction may occur at an inner temperature of the tube outside the outer tube 2. The heating element 4 for maintaining the high temperature which exists is formed.
그리고 화학반응이 일어나는 공간인 상기 인너튜브(1)의 내부로 반응가스와 분위기 가스를 공급하기 위한 노즐이 상기 아우터튜브(2)를 관통하여 연결되는바, 이러한노즐에는 분위기가스인 질소를 공급하는 질소노즐(5)과 반응가스인 포스핀가스를 인너튜브(1)의 내부로 공급하는 룽노즐(6)과 프스핀가스 및 SiH4가스를 공급하는 가스노즐(7)이 있다.In addition, a nozzle for supplying a reaction gas and an atmosphere gas into the inner tube 1, which is a space where a chemical reaction occurs, is connected through the outer tube 2 to supply nitrogen, which is an atmosphere gas, to the nozzle. There is a long nozzle 6 for supplying a nitrogen nozzle 5 and a phosphine gas as a reaction gas into the inner tube 1, and a gas nozzle 7 for supplying a pspine gas and SiH 4 gas.
상기 롱노즐(6)은 중간부위의 절곡부를 중심으로 하여 두 개의 부분으로 구분될 수 있는데, 인너튜브(1)의 내부에 인너튜브(1)의 길이방향과 나란히 길게 형성되는 방출부(6')와 인너튜브(1)와 아우터튜브(2)의 사이에 위치하는 공급부(6)가 그것이다.The long nozzle 6 may be divided into two parts centering on the bent portion of the middle part, and the discharge part 6 'is formed to be formed in parallel with the longitudinal direction of the inner tube 1 in the inner tube 1. ) And the supply part 6 located between the inner tube 1 and the outer tube 2.
상기 방출부(6')에는 인(P)의 농도가 균일하게 증착되도록 하기 위해 수개의 빙출공(미도시)이 형성되어 인너튜브(1)의 내부로 포스핀가스를 분출하도록 형성되어 있다.In the discharge portion 6 ', several ice discharge holes (not shown) are formed in order to uniformly deposit the concentration of phosphorus (P) and are formed to eject phosphine gas into the inner tube 1.
상기 인너튜브(1)와 아우터튜브(2)의 재질은 탄화규소(SiC)이며 각각의 노즐(5, 6, 7)의 재질은 산화규소(SiO2)이다.The inner tube 1 and the outer tube 2 are made of silicon carbide (SiC), and the nozzles 5, 6, and 7 are made of silicon oxide (SiO 2 ).
상기한 바와 같은 구조로 되는 종래의 저압 화학기상증착 장비의 튜브의 작용을 설명하면 다음과 같다.Referring to the operation of the tube of the conventional low pressure chemical vapor deposition equipment having the structure as described above are as follows.
상기 아우터튜브(2)룰 관통하도록 상기 질소노즐(5)과 롱노즐(6) 및 가스노즐(7)을 장착한 상태에서 처리하고자 하는 웨이퍼(미도시)를 수납하고 있는 보트(3)를 상기 아우터튜브(2)의 저부에서 밀어넣어 적당한 위치에 고정하게 된다.The boat (3) containing the wafer (not shown) to be processed while the nitrogen nozzle (5), the long nozzle (6) and the gas nozzle (7) are mounted to penetrate the outer tube (2) The bottom of the outer tube (2) is pushed into a fixed position.
이러한 상태에서 먼저 상기 질소노즐(5)을 통해 분위기가스인 질소가스를 공급함과 아울러 상기 발열체(4)에 의해 인너튜브(1) 내부의 온도를 적절한 반응온도로 만든 후 상기 롱노즐(6)과 가스노즐(7)을 통해 반응가스를 공급하여 웨이퍼의 표면에서 화학반응이 일이나 박막이 증착되도록 하게 된다.In such a state, the nitrogen gas, which is an atmospheric gas, is first supplied through the nitrogen nozzle 5, and the temperature of the inner tube 1 is made to the appropriate reaction temperature by the heating element 4, and then the long nozzle 6 and The reaction gas is supplied through the gas nozzle 7 so that a chemical reaction or a thin film is deposited on the surface of the wafer.
그러나, 상기한 바와 같은 구조로 되는 종래의 저압 화학기상증착 장비의 튜브에는 다음과 같은 문제점이 있었다.However, the tube of the conventional low pressure chemical vapor deposition equipment having the structure as described above had the following problems.
즉, 상기 롱노즐(6)의 방출부(6')는 인너튜브(1) 내부가 고온으로 유지됨에 의해 변형되는 경우가 빈발하였는데, 이 경우 상기 보트(3)를 상하로 움직이는 과정에서 보트(3)와 부딪혀 파손되게 되어 장비의 수명이 단축됨과 아울러 웨이퍼를 오염시키는 원인이 되었던 것이다.That is, the discharge part 6 'of the long nozzle 6 is frequently deformed by keeping the inner tube 1 inside at a high temperature. In this case, the boat 3 is moved in the process of moving the boat 3 up and down. And 3) it was damaged and shortened the life of the equipment and was a cause of contamination of the wafer.
따라서 상기한 바와 같은 문제점을 인식하여 안출된 본 고안의 목적은 상기한 바와같은 롱노즐(6)과 보트(3)와의 충돌에 의해 장비의 수명의 단축되거나 웨이퍼가 오염되는 것을 방지할 수 있는 저압 화학기상증착 장비의 튜브를 제공하고자 하는 것이다.Therefore, the object of the present invention devised by recognizing the problems as described above is a low pressure that can prevent the shortening of the life of the equipment or contamination of the wafer by the collision between the long nozzle 6 and the boat 3 as described above It is to provide a tube of chemical vapor deposition equipment.
제1도는 종래의 저압 화학기상증착 장비의 튜브 구조를 개략적으로 보인 종단면도.Figure 1 is a longitudinal sectional view schematically showing the tube structure of a conventional low pressure chemical vapor deposition equipment.
제2도는 본 고안의 일실시예에 의한 저압 화학기상증착 장비의 튜브의 구조를 개략적으로 도시한 종단면도.Figure 2 is a longitudinal sectional view schematically showing the structure of a tube of low pressure chemical vapor deposition equipment according to an embodiment of the present invention.
제3도는 본 고안에 의한 저압 화학기상증착 장비의 튜브에서 인너튜브와 일체로 형성된 방출관과 상기 방출관과 결합되는 공급관의 분해사시도.Figure 3 is an exploded perspective view of the discharge tube and the supply tube coupled to the discharge tube formed integrally with the inner tube in the tube of the low-pressure chemical vapor deposition equipment according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1, 10 : 인너튜브 2 : 아우터 튜브1, 10: inner tube 2: outer tube
3 : 보트 4 : 발열체3: boat 4: heating element
5 : 질소노즐 6 : 롱노즐5: nitrogen nozzle 6: long nozzle
6' : 방출부 6 : 공급부6 ': discharge part 6: supply part
7 : 가스노즐 11 : 방출관7 gas nozzle 11 discharge tube
12 : 공급관12: supply pipe
상기한 바와 같은 본 고안의 목적을 달성하기 위하여 보트가 장착되는 인너튜브의 외측에 아우터튜브가 설치되는 저압 화학기상증착 장비의 튜브에 있어서, 상기 인너 튜브의 내측에는 외부에서 유입되는 반응가스가 통과하는 공급관으로 부터 반응가스를 공급받아 인너튜브의 내부로 방출하는 방출관이 일체로 형성되는 것을 특징으로 하는 저압 화학기상증착 장비의 튜브가 제공된다.In order to achieve the object of the present invention as described above, in the tube of the low-pressure chemical vapor deposition equipment that the outer tube is installed on the outer side of the inner tube on which the boat is mounted, the inner side of the inner tube passes through the reaction gas flowing from the outside Provided is a tube of low pressure chemical vapor deposition equipment characterized in that the discharge tube is supplied to the reaction gas from the supply pipe to be discharged into the inner tube is formed integrally.
또한, 상기 방출관은 인너튜브의 길이방향으로 형성되며 수개의 관통홈이 형성된 것을 특징으로 하는 저압 화학기상증착 장비의 튜브가 제공된다.In addition, the discharge tube is provided in the longitudinal direction of the inner tube is provided with a tube of low pressure chemical vapor deposition equipment, characterized in that several through grooves are formed.
이하, 첨부도면에 도시한 본 고안의 일실시예에 의거하여 본 고안을 상세히 설명한다.Hereinafter, the present invention will be described in detail based on an embodiment of the present invention shown in the accompanying drawings.
제2도는 본 고안의 일실시예에 의한 저압 화학기상증착 장비의 튜브의 구조를 개략적으로 도시한 종단면도로서, 이에 도시한 바와 같이, 본 고안에 의한 저압 화학기상증착 장비의 튜브에서 질소노즐(5)과 가스노즐(7) 및 아우터튜브(2)의 구조는 종래의 저압 화학기상증착 장비의 튜브의 것과 동일하다.2 is a longitudinal sectional view schematically showing the structure of a tube of a low pressure chemical vapor deposition apparatus according to an embodiment of the present invention, as shown in this, the nitrogen nozzle ( 5) and the structure of the gas nozzle 7 and the outer tube 2 are the same as that of the tube of the conventional low pressure chemical vapor deposition equipment.
그러나, 본 고안에 의한 저압 화학기상증착 장비의 튜브에 사용되는 인너튜브(10)는 종래의 인너튜브(1)와 달리 가스를 인너튜브(10)의 내부로 방출하기 위한 방출관(11)과 일체로 형성되게 된다.However, the inner tube 10 used in the tube of the low-pressure chemical vapor deposition apparatus according to the present invention, unlike the conventional inner tube 1 and the discharge tube 11 for discharging the gas into the inner tube 10 and It is formed integrally.
제3도는 본 고안에 의한 저압 화학기상증착 장비의 튜브에서의 인너튜브(미도시)와 일체로 형성된 방출관(11)과 상기 방출관(11)과 결합되는 공급관(12)의 분해사시도로서, 이에 도시한 바와 같이, 인너튜브(미도시)와 일체로 형성된 방출관(11)의 하부에 공급관(12)을 결합하여 종래의 롱노즐(6)과 같은 기능을 하는 반응가스의 통로를 완성하게 된다.Figure 3 is an exploded perspective view of the discharge tube 11 and the supply tube 12 is integrally formed with the inner tube (not shown) in the tube of the low-pressure chemical vapor deposition apparatus according to the present invention, As shown in the drawing, the supply pipe 12 is coupled to the lower portion of the discharge tube 11 formed integrally with the inner tube (not shown) to complete the passage of the reaction gas functioning as the conventional long nozzle 6. do.
도면상 미설명 부호는 제1도와 동일한 것을 나타낸다.Reference numerals in the drawings denote the same as those in FIG. 1.
상기한 바와 같은 구조로 되는 본 고안의 저압 화학기상증착 장비의 튜브의 작용은 종래의 것과 유사하며 종래 방출부(6')와 공급부(6)로 구성된 롱노즐(6)을 아우터튜브(2)를 관통하여 결합하는 것과 달리 단품으로 형성된 공급관(12)을 인너튜브(10)와 일체로 형성된 방출관(11)의 저부에 결합하여 형성된 가스의 통로를 이용하여 인너튜브(10)의 내부로 반응가스를 공급하는 점에서 차이가 있다.The action of the tube of the low-pressure chemical vapor deposition apparatus of the present invention having the structure as described above is similar to the conventional one, and the outer tube 2 includes the long nozzle 6 composed of the conventional discharge part 6 'and the supply part 6. Unlike to penetrate through the coupling, the supply pipe 12 formed as a single unit is reacted to the inside of the inner tube 10 by using a gas passage formed by coupling to the bottom of the discharge tube 11 integrally formed with the inner tube 10. There is a difference in supplying gas.
상기한 바와 같이 본 고안의 저압 화학기상증착 장비의 튜브는 인너튜브와 방출관이 일체로 형성되어 있으므로 인너튜브 내부의 고열에 의해 방출관이 변형되는 것이 방지되어 보트를 상하로 이동하는 경우에도 종래 롱노즐의 방출부와 같은 기능을 하는 방출관이 보트와의 충돌로 파손될 위험이 없어 종래와 같이 롱노즐과 보트가 충돌하여 장비의 수명의 단축되거나 웨이퍼가 오염되는 것을 방지할 수 있는 효과가 있다.As described above, since the inner tube and the discharge tube are integrally formed with the tube of the low pressure chemical vapor deposition apparatus of the present invention, the discharge tube is prevented from being deformed by the high temperature inside the inner tube, and thus the boat is moved up and down. There is no risk that the discharge tube, which functions as the discharge part of the long nozzle, is not damaged by collision with the boat, so that the long nozzle and the boat collide with each other, thereby reducing the life of the equipment or contamination of the wafer. .
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019970001407U KR200156812Y1 (en) | 1997-01-31 | 1997-01-31 | Lpcvd tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019970001407U KR200156812Y1 (en) | 1997-01-31 | 1997-01-31 | Lpcvd tube |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR19980057238U KR19980057238U (en) | 1998-10-15 |
| KR200156812Y1 true KR200156812Y1 (en) | 1999-09-01 |
Family
ID=19495046
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019970001407U KR200156812Y1 (en) | 1997-01-31 | 1997-01-31 | Lpcvd tube |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR200156812Y1 (en) |
-
1997
- 1997-01-31 KR KR2019970001407U patent/KR200156812Y1/en not_active IP Right Cessation
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| Publication number | Publication date |
|---|---|
| KR19980057238U (en) | 1998-10-15 |
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