KR200156159Y1 - Structure of capacitor - Google Patents
Structure of capacitor Download PDFInfo
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- KR200156159Y1 KR200156159Y1 KR2019970007781U KR19970007781U KR200156159Y1 KR 200156159 Y1 KR200156159 Y1 KR 200156159Y1 KR 2019970007781 U KR2019970007781 U KR 2019970007781U KR 19970007781 U KR19970007781 U KR 19970007781U KR 200156159 Y1 KR200156159 Y1 KR 200156159Y1
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- South Korea
- Prior art keywords
- capacitor
- polysilicon
- upper electrode
- serving
- capacitance
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- 239000003990 capacitor Substances 0.000 title claims abstract description 79
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 23
- 229920005591 polysilicon Polymers 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims description 10
- XUIMIQQOPSSXEZ-RNFDNDRNSA-N silicon-32 atom Chemical compound [32Si] XUIMIQQOPSSXEZ-RNFDNDRNSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
- H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0658—Vertical bipolar transistor in combination with resistors or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
- H01L27/067—Lateral bipolar transistor in combination with diodes, or capacitors, or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors with potential-jump barrier or surface barrier
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
Abstract
본 고안은 커패시터의 구조에 관한 것으로, 종래의 구조에 있어서는 커패시터의 상부전극이 되는 폴리실리콘이 사각형이고, 엔형 또는 피형 액티브영역의 하나만을 하부전극으로 사용했기 때문에, 동작전압이 인가되었을 때 공핍층의 형성에 의하여 정전용량이 변화하는 문제점과, 에지효과(Edge Effect)에 의해 정전용량값의 오차가 많은 문제점이 있었다. 이와같은 문제점을 감안한 본 고안은 두 개의 커패시터를 팔각형모양으로 제조하여 하나의 유니트(Unit)커패시터로 접속하고, 원하는 정전용량에 따라 커패시터의 상부전극을 다수개 배열하여 안정된 정전용량을 얻을 수 있고, 에지효과를 줄일 수 있는 폴리-액티브커패시터구조를 제공함으로써, 동작전압에 따른 정전용량의 변화가 적은 커패시터를 제조하여 소자설계시 커패시터를 포함하는 회로의 구현이 가능한 효과가 있다.The present invention relates to the structure of a capacitor. In the conventional structure, since the polysilicon serving as the upper electrode of the capacitor is rectangular, and only one of the N-type or the active region is used as the lower electrode, the depletion layer is applied when an operating voltage is applied. There is a problem that the capacitance changes due to the formation of a, and the error of the capacitance value is large due to the edge effect. In consideration of such problems, the present invention manufactures two capacitors in an octagonal shape, connects them as one unit capacitor, and obtains a stable capacitance by arranging a plurality of upper electrodes of the capacitor according to a desired capacitance. By providing a poly-active capacitor structure that can reduce the edge effect, it is possible to manufacture a capacitor with a small change in capacitance according to the operating voltage to implement a circuit including a capacitor when designing the device.
Description
본 고안은 커패시터구조에 관한 것으로, 특히 바이폴라씨모스트랜지스터의 폴리-액티브커패시터에 있어서 동작전압에 따른 정전용량의 변화가 적고 원하는 정전용량을 쉽게 얻기에 적당하도록 한 커패시터구조에 관한 것이다.The present invention relates to a capacitor structure, and more particularly, to a capacitor structure in which a change in capacitance according to an operating voltage is small and suitable for easily obtaining a desired capacitance in a poly-active capacitor of a bipolar sea transistor.
일반적으로, 모스트랜지스터에서는 커패시터를 사용하지 않았으나 바이폴라씨모스트랜지스터는 제조공정중에 커패시터를 제조할 수 있어 커패시터의 상부전극과 하부전극의 결합에 따라 폴리-액티브커패시터, 폴리-폴리커패시터, 폴리-메탈커패시터와, 메탈-메탈커패시터로 불리우는 커패시터가 최근에 널리 제조되고 있다. 본 고안은 폴리-액티브커패시터의 구조에 관한 것으로, 먼저 도면을 참조하여 일반적인 폴리-액티브커패시터에 대하여 설명하면 다음과 같다.In general, most transistors do not use capacitors, but bipolar C-MOS transistors can manufacture capacitors during the manufacturing process. And capacitors called metal-metal capacitors have been widely manufactured in recent years. The present invention relates to a structure of a poly-active capacitor, and the general poly-active capacitor will be described with reference to the drawings as follows.
도1은 일반적인 폴리-액티브커패시터의 단면도로서, 이에 도시한 바와같이 커패시터의 하부전극이 되는 엔형 또는 피형기판(10)과, 상기 엔형 또는 피형기판(10)의 상부에 커패시터의 유전체가 되는 게이트산화막(11)과, 상기 게이트산화막(11)의 양측면에 다른소자와의 격리를 위한 필드산화막(12)과, 상기 게이트산화막(11)의 상부에 커패시터의 상부전극이 되는 폴리실리콘(13)으로 구성된다.FIG. 1 is a cross-sectional view of a general poly-active capacitor. As shown therein, an N-type or shaped substrate 10 serving as a lower electrode of a capacitor and a gate oxide film serving as a dielectric of a capacitor on the N-type or shaped substrate 10 are shown. (11), a field oxide film (12) for isolation from other elements on both sides of the gate oxide film (11), and a polysilicon (13) serving as an upper electrode of a capacitor on the gate oxide film (11). do.
도2는 종래 기술에 의한 커패시터구조의 평면도로서, 이에 도시한 바와같이 커패시터의 하부전극이 되는 피형 또는 엔형 액티브영역(20)과, 상기 피형 또는 엔형 액티브영역(20)을 접점하는 하부전극연결부(21)와, 커패시터의 상부전극이 되는 사각형의 폴리실리콘(22)과, 상기 폴리실리콘(22)을 접점하는 상부전극연결부(23)와, 상기 하부전극연결부(21)의 도선이 되는 제1금속배선부(24)와 상기 상부전극연결부(23)의 도선이 되는 재2금속배선부(25)로 구성된다.FIG. 2 is a plan view of a capacitor structure according to the prior art, and as shown therein, the lower electrode connection part contacting the p-type or n-type active region 20 serving as the lower electrode of the capacitor and the p-type or n-type active region 20 ( 21, a rectangular polysilicon 22 serving as an upper electrode of the capacitor, an upper electrode connecting portion 23 for contacting the polysilicon 22, and a first metal serving as a conductor of the lower electrode connecting portion 21; It consists of a wiring part 24 and the second metal wiring part 25 serving as a conductor of the upper electrode connection part 23.
상기한 바와같은 종래의 폴리-액티브커패시터구조는 커패시터의 하부전극으로 피형 또는 엔형액티브영역 하나만을 사용했기 때문에 동작전압에 따른 공핍층의 형성에 의하여 정전용량이 50%이상 변화하므로 간단한 전하축적의 경우에만 사용되는 문제점과, 커패시터의 상부전극이 사각형이기 때문에 에지효과(Edge Effect)에 의해 정전용량의 값이 오차가 많은 문제점이 있었다.In the conventional poly-active capacitor structure as described above, since only one type or en-type active region is used as the lower electrode of the capacitor, the capacitance changes by 50% or more due to the formation of a depletion layer according to the operating voltage. Only the problem, and because the upper electrode of the capacitor is a square, there was a problem that the value of the capacitance has a lot of error due to the edge effect (Edge Effect).
이와같은 문제점을 감안한 본 고안은 두 개의 커패시터를 팔각형모양으로 제조하고, 두 개의 커패시터를 하나의 유니트(Unit)커패시터로 접속함으로써, 안정된 정전용량을 얻을 수 있고, 에지효과를 줄일 수 있는 폴리-액티브커패시터구조의 제공에 그 목적이 있다.In consideration of these problems, the present invention manufactures two capacitors in an octagonal shape, and connects two capacitors with one unit capacitor, thereby achieving stable capacitance and reducing edge effects. The purpose is to provide a capacitor structure.
도1은 일반적인 폴리-액티브커패시터구조의 단면도.1 is a cross-sectional view of a typical poly-active capacitor structure.
도2는 종래의 커패시터구조의 평면도.2 is a plan view of a conventional capacitor structure.
도3은 본 고안에 의한 커패시터구조의 평면도.3 is a plan view of a capacitor structure according to the present invention;
도4는 도3에 있어서 높은 정전용량을 갖는 커패시터구조의 평면도.4 is a plan view of a capacitor structure with high capacitance in FIG.
***도면의 주요 부분에 대한 부호의 설명****** Description of the symbols for the main parts of the drawings ***
100:제1커패시터200:제2커패시터100: first capacitor 200: second capacitor
30:피형 액티브영역31:하부전극연결부30: active active region 31: lower electrode connection
32:폴리실리콘33:상부전극연결부32: polysilicon 33: upper electrode connection
40:엔형 액티브영역41:하부전극연결부40: yen active region 41: lower electrode connection portion
42:폴리실리콘43:상부전극연결부42: polysilicon 43: upper electrode connection
44:제3금속배선부45:제4금속배선부44: third metal wiring portion 45: fourth metal wiring portion
상기의 목적은 엔액티브영역을 하부전극으로 하는 팔각형모양의 커패시터와 피액티브영역을 하부전극으로 하는 팔각형모양의 커패시터를 그 상부전극은 상부전극끼리 하부전극은 하부전극끼리 금속으로 접속하여 하나의 유니트커패시터를 제조함으로써 달성되는 것으로, 이와같은 본 고안에 의한 커패시터구조를 첨부한 도면을 참조하여 상세히 설명하면 다음과 같다.The above object is to connect an octagonal capacitor with an active area as a lower electrode and an octagonal capacitor with an active area as a lower electrode, the upper electrode of which is connected to the upper electrode, and the lower electrode to the lower electrode. It is achieved by manufacturing a capacitor, described in detail with reference to the accompanying drawings the capacitor structure according to the present invention as follows.
먼저, 도3은 본 고안에 의한 커패시터구조의 평면도로서, 이에 도시한 바와같이 제1커패시터(100)의 하부전극이 되는 피액티브영역(30)과, 상기 피액티브영역(30)을 접점하는 하부전극연결부(31)와, 상기 제1커패시터(100)의 상부전극이 되는 팔각형모양의 폴리실리콘(32)과, 상기 폴리실리콘(32)을 접점하는 상부전극연결부(33)와, 제2커패시터(200)의 하부전극이 되는 엔액티브영역(40)과, 상기 엔액티브영역(40)을 접점하는 하부전극연결부(41)와, 상기 제2커패시터(200)의 상부전극이 되는 팔각형모양의 폴리실리콘(42)과, 상기 폴리실리콘(42)을 접점하는 상부전극연결부(43)와, 상기 제1커패시터(100)의 하부전극연결부(31)와 제2커패시터(200)의 하부전극연결부(41)를 접속하는 제3금속배선부(44)와, 상기 제1커패시터(100)의 상부전극연결부(33)와 제2커패시터(200)의 상부전극연결부(43)를 접속하는 제4금속배선부(45)로 구성된다.First, FIG. 3 is a plan view of a capacitor structure according to the present invention, and as shown therein, an inactive region 30 serving as a lower electrode of the first capacitor 100 and a lower portion contacting the inactive region 30. An electrode connector 31, an octagonal polysilicon 32 serving as an upper electrode of the first capacitor 100, an upper electrode connector 33 contacting the polysilicon 32, and a second capacitor ( An active region 40 serving as a lower electrode of the 200, a lower electrode connecting portion 41 contacting the active region 40, and an octagonal polysilicon serving as an upper electrode of the second capacitor 200. 42, an upper electrode connecting portion 43 contacting the polysilicon 42, a lower electrode connecting portion 31 of the first capacitor 100, and a lower electrode connecting portion 41 of the second capacitor 200. The third metal wiring 44 to connect the upper electrode, the upper electrode connecting portion 33 of the first capacitor 100 and the upper portion of the second capacitor 200 The fourth consists of a metal wiring portion 45 for connecting the electrode connection part (43).
그 다음으로, 도4는 도3에 있어서 높은 정전용량을 갖는 커패시터구조의 평면도로서, 이에 도시한 바와 같이 높은 정전용량을 필요로 할 경우는 상기 제1커패시터(100)의 상부전극이 되는 팔각형모양의 폴리실리콘(32)과 제2커패시터(200)의 상부전극이 되는 팔각형모양의 폴리실리콘(42)을 원하는 정전용량만큼 각각 제1커패시터(100)와 제2커패시터(200)에 다수의 동일한 갯수로 배열하여 상기 제4금속배선부(45)로 접속한다. 그리고, 상기 팔각형모양의 폴리실리콘(32),(42)은 육각형 또는 원형모양으로 제조하여도 에지효과를 줄일 수 있다.Next, FIG. 4 is a plan view of a capacitor structure having a high capacitance in FIG. 3, and as shown therein, an octagonal shape that becomes an upper electrode of the first capacitor 100 when a high capacitance is required. The octagonal polysilicon 42, which is the upper electrode of the polysilicon 32 and the second capacitor 200 of the first capacitor 100 and the second capacitor 200, is the same number as many as desired. Are arranged to be connected to the fourth metal wiring part 45. In addition, the octagonal polysilicon 32, 42 may reduce the edge effect even if manufactured in a hexagonal or circular shape.
상기에 상세히 설명한 바와같이 본 고안에 따르면 정전용량이 같은 피형 액티브영역에 제조된 제1커패시터와 엔형 액티브영역에 제조된 제2커패시터의 상부전극을 팔각형모양으로 접속하고, 원하는 정전용량만큼 각각의 상부전극을 추가함으로써, 동작전압에 따른 정전용량의 변화가 적은 우수한 커패시터를 제조할 수 있는 효과와, 원하는 정전용량을 갖는 커패시터를 쉽게 제작할 수 있어 소자설계시 커패시터를 포함하는 회로의 구현이 가능한 효과가 있다.As described in detail above, according to the present invention, the upper electrodes of the first capacitors manufactured in the same active capacitance and the second capacitors manufactured in the N-type active region are connected in an octagonal shape, and each upper portion is formed by the desired capacitance. By adding an electrode, it is possible to manufacture an excellent capacitor with a small change in capacitance according to an operating voltage, and to easily manufacture a capacitor having a desired capacitance, so that a circuit including a capacitor can be implemented when designing a device. have.
Claims (4)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019970007781U KR200156159Y1 (en) | 1997-04-15 | 1997-04-15 | Structure of capacitor |
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| KR2019970007781U KR200156159Y1 (en) | 1997-04-15 | 1997-04-15 | Structure of capacitor |
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| KR200156159Y1 true KR200156159Y1 (en) | 1999-09-01 |
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