KR200149911Y1 - Gun of sputtering apparatus - Google Patents
Gun of sputtering apparatus Download PDFInfo
- Publication number
- KR200149911Y1 KR200149911Y1 KR2019960020385U KR19960020385U KR200149911Y1 KR 200149911 Y1 KR200149911 Y1 KR 200149911Y1 KR 2019960020385 U KR2019960020385 U KR 2019960020385U KR 19960020385 U KR19960020385 U KR 19960020385U KR 200149911 Y1 KR200149911 Y1 KR 200149911Y1
- Authority
- KR
- South Korea
- Prior art keywords
- target material
- gun
- chamber
- rotational force
- external magnets
- Prior art date
Links
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 25
- 239000013077 target material Substances 0.000 claims abstract description 41
- 239000002826 coolant Substances 0.000 claims abstract description 13
- 239000000498 cooling water Substances 0.000 claims abstract description 12
- 238000000151 deposition Methods 0.000 claims abstract 2
- 239000000463 material Substances 0.000 claims abstract 2
- 238000001816 cooling Methods 0.000 claims 1
- 230000007797 corrosion Effects 0.000 abstract description 4
- 238000005260 corrosion Methods 0.000 abstract description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 22
- 229910052786 argon Inorganic materials 0.000 description 13
- 239000007789 gas Substances 0.000 description 10
- -1 argon ions Chemical class 0.000 description 4
- 230000007935 neutral effect Effects 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/351—Sputtering by application of a magnetic field, e.g. magnetron sputtering using a magnetic field in close vicinity to the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3457—Sputtering using other particles than noble gas ions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3455—Movable magnets
Abstract
웨이퍼위에 원하는 물질의 막을 증착시키기 위한 타켓물질을 장착하는 본 고안의 스퍼터링 장치의 건은 타켓물질이 하부에 부착되고 냉각수가 공급되는 냉각수 챔버와, 타켓물질 주위에 자기력선을 형성하기 위한 상기 냉각수 챔버의 중앙에 고정된 내부자석 및 냉각수 챔버외부에 대칭적으로 형성된 다수개의 외부자석과, 상기 다수개의 외부작석이 부착되는 다수개의 지지대와, 상기 외부자석을 회전시키는 회전력을 발생시키는 모터와, 상기 모터의 회전력을 전달하는 회전축을 포함하여 자기력선을 타켓물질에 고루 발생시켜 타켓물질을 고르게 소모할 수 있고, 지지대가 냉각수 챔버외부에 위치하여 부식을 억제하여 건의 사용기간을 연장할 수 있다.The gun of the sputtering apparatus of the present invention, which mounts a target material for depositing a film of a desired material on a wafer, includes a coolant chamber to which a target material is attached and a cooling water is supplied, and a coolant chamber to form magnetic lines of force around the target material. A plurality of external magnets symmetrically formed outside the coolant chamber and the inner magnet fixed in the center, a plurality of support to which the plurality of external seats are attached, a motor generating a rotational force to rotate the external magnets, and The magnetic force lines can be evenly generated on the target material, including the rotating shaft that transmits the rotational force, and the target material can be evenly consumed. The support is located outside the cooling water chamber to suppress corrosion and extend the service life of the gun.
Description
제1a도는 종래의 스퍼터링 장치의 건의 종단면도.1A is a longitudinal sectional view of a gun of a conventional sputtering apparatus.
제1b도는 1a도를 A-A'선으로 절단한 횡단면도.FIG. 1B is a cross-sectional view of FIG. 1A taken along the line A-A '.
제2a도는 본 고안에 따른 스퍼터링 장치의 건의 종단면도.Figure 2a is a longitudinal cross-sectional view of the gun of the sputtering apparatus according to the present invention.
제2b도는 2a도를 B-B'선으로 절단한 횡단면도.2b is a cross-sectional view taken along the line B-B 'in FIG. 2a.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
20 : 건 21 : 냉각수 챔버20 Gun 21 Coolant Chamber
22 : 내부고정자석 23 : 타켓물질22: internal fixed magnet 23: target material
23-1 : 타켓물질의 소모부분 24 : 모터23-1: Consumed part of target material 24: Motor
25 : 회전축 26 : 지지대25: axis of rotation 26: support
27 : 외부자석27: outside magnet
본 고안은 스퍼터링 장치는 건(gun)에 관한 것으로서, 특히 장착되는 타켓물질의 교환기간을 연장시키고 사용 기간을 증가시킬 수 있는 스퍼터링 장치의 건에 관한 것이다.The present invention relates to a sputtering device gun, and more particularly to a sputtering device gun that can prolong the exchange period and increase the use period of the target material to be mounted.
스퍼터링 장치는 반도체기판, 즉, 웨이퍼 위에 원하는 박막을 층착시키는 것을 진공챔버 내에 반응가스인 이르곤가스등을 주입하고 2개 전극에 직류전압을 가하면 중성의 아르곤가스가 양이온화되어 음극성을 가지게되는 스퍼터링 장치의 건에 부착된 타켓물질과 충돌하여 이 타켓물질의 원자들을 이탈시키고, 이 이탈된 원자들의 양극성을 가지는 전극 쪽에 장착된 웨이퍼 상에 증착되도록 하는 것이다.The sputtering apparatus injects irgon gas, which is a reaction gas, into a vacuum chamber to deposit a desired thin film on a semiconductor substrate, that is, a wafer, and applies a direct current voltage to two electrodes. It collides with the target material attached to the gun of the device to release the atoms of the target material and to be deposited on the wafer mounted on the electrode side having the bipolarity of the released atoms.
제1도의 a는 종래의 스퍼터링 장치의 건의 종단면도이고, b는 a를 A-A'선으로 절단한 횡단면도이다.A in FIG. 1 is a longitudinal cross-sectional view of the gun of the conventional sputtering apparatus, and b is a cross-sectional view which cut | disconnected a with the line A-A '.
종래의 스퍼터링 장치의 건(10)은 하부에 타켓물질(18)이 부착되는 냉각수 챔버(11)와, 상기 냉각수 챔버(11)내에 위치하여 회전하여 타켓물질(18)주위에 자기력선을 형성하는 한쌍의 자석(17-1)(17-2)과, 상기 한쌍의 자석(17-1)(17-2)이 고정되는 자석판(15)과, 상기 자석(17-1)(17-2)의 회전시 무게 균형을 이루기 위한 무게균형판(12)과, 상기 자석판(15)과 무게균형판(12)이 부착되는 지지대(14), 상기 자석판(15)가 무게균형판(12)을 회전시키는 회전력을 발생시키는 모터(19)와 상기 회전력을 전달하는 회전축(13)을 포함한다. 도면에 도시되지 않았으나 타켓물질(18)이 증착될 웨이퍼(도시되지 않음)는 상술한 건(10)과 마주보게 진공 챔버(도시되지 않음) 내에 장착된다.The gun 10 of the conventional sputtering apparatus has a coolant chamber 11 having a target material 18 attached to the lower portion thereof, and a pair of magnetic force lines formed around the target material 18 by rotating in the coolant chamber 11. Magnets 17-1 and 17-2, the magnet plate 15 to which the pair of magnets 17-1 and 17-2 are fixed, and the magnets 17-1 and 17-2. A weight balance plate 12 for achieving a weight balance during rotation, a support 14 to which the magnet plate 15 and the weight balance plate 12 are attached, and the magnet plate 15 to rotate the weight balance plate 12. It includes a motor 19 for generating a rotational force and a rotating shaft 13 for transmitting the rotational force. Although not shown in the figure, a wafer (not shown) on which the target material 18 is to be deposited is mounted in a vacuum chamber (not shown) facing the gun 10 described above.
종래의 스퍼터링 장치의 건(10)의 동작은 다음과 같다.The operation of the gun 10 of the conventional sputtering apparatus is as follows.
웨이퍼가 장착된 진공챔버 내에 아르곤가스를 주입한 후 2개의 전극에 전원을 연결시켜 상기 아르곤가스를 이온화시킨다. 즉, 타켓물질(18)에 음의 전원을, 웨이퍼에 양의 전원을 각각 연결시킨다. 타켓물질(18)에서 전자가 웨이퍼 방향으로 이동하여 진공챔버 내에 공급된 중성의 아르곤가스와 충돌하게 된다.After argon gas is injected into the vacuum chamber in which the wafer is mounted, the argon gas is ionized by connecting power to two electrodes. That is, the negative power is connected to the target material 18 and the positive power is connected to the wafer, respectively. In the target material 18, electrons move toward the wafer and collide with the neutral argon gas supplied into the vacuum chamber.
이때, 아르곤가스는 이온화되고, 이온화된 아르곤 이온(Ar+)은 마이너스 극인 타켓물질(18)과 충돌하며, 충돌로 인하여 발생되는 타켓물질의 소모부분(18-1)은 웨이퍼상에 증착된다.At this time, the argon gas is ionized, and the ionized argon ions (Ar + ) collide with the target material 18 which is a negative pole, and the consumed portion 18-1 of the target material generated by the collision is deposited on the wafer.
이때 모터(19)에는 구동전압을 인가하여 회전력을 회전축(13)과 지지대(14)를 통하여 자석판(15)과 무게균형판(12)에 전달된다.At this time, the driving force is applied to the motor 19 and the rotational force is transmitted to the magnet plate 15 and the weight balance plate 12 through the rotation shaft 13 and the support 14.
상기 전달된 회전력은 자석판(15)에 부착된 한쌍의 자석(17-1)(17-2)을 회전시키면서 자력선을 음극인 타켓물질(18) 주의에 형성시킨다.The transmitted rotational force rotates a pair of magnets 17-1 and 17-2 attached to the magnet plate 15 to form a magnetic force line around the target material 18, which is a cathode.
이때, 이온화된 아르곤 이온(Ar+)은 마이너스극인 타켓물질(18)에 자기력선을 따라 충돌한다.At this time, the ionized argon ions (Ar + ) collide with the magnetic force line to the target material 18 which is a negative pole.
이때 자석(17-1)(17-2)이 회전하는 부분에서만 타켓물질(18) 주위에 자기력선이 형성된다.At this time, magnetic force lines are formed around the target material 18 only at the portions where the magnets 17-1 and 17-2 rotate.
그러나, 상기와 같이 종래의 스퍼터링 장치의 건에서는 자기력선이 발생되는 부분은 양이온화된 아르곤가스의 충돌이 다른 곳보다 빈번하므로 특정부분의 타켓물질 소모가 많아 타켓물질을 자주 교체하여야 하는 문제점이 있었다. 또한, 자석과 지지대가 냉각수챔버 속에 위치하므로 부식이 빠르게 되어 건의 사용기간을 단축시키는 문제점이 있었다.However, as described above, in the case of the conventional sputtering device, the portion in which the magnetic force lines are generated is more frequently collided with the cationized argon gas than other places, and thus, the target material is often consumed, and the target material needs to be replaced frequently. In addition, since the magnet and the support are located in the cooling water chamber, there is a problem that the corrosion is faster and shorten the service life of the gun.
따라서, 본 고안의 목적은 자기력선을 타켓물질에 고루 발생시켜 타켓물질을 고르게 소모할 수 있는 스퍼터링 장치의 건을 제공함에 있다.Accordingly, an object of the present invention is to provide a sputtering device gun capable of uniformly consuming a target material by generating magnetic force lines evenly on a target material.
본 발명의 다른 목적은 자석과 지지대의 부식을 억제하여 건의 사용기간을 연장할 수 있는 스퍼터링 장치의 건을 제공함에 있다.Another object of the present invention is to provide a sputtering device gun which can prolong the service life of the gun by suppressing corrosion of the magnet and the support.
상기 목적들을 달성하기 위한 본 고안에 따른 스퍼터링 장치의 건은 타켓물질이 하부에 부착되고 냉각수가 공급되는 냉각수 챔버와, 타켓물질 주위에 자기력선을 형성하기 위한 상기 냉각수 챔버의 중앙에 고정된 내부자석 및 냉각수 챔버외부에 대칭적으로 형성된 다수개의 외부자석과, 상기 다수개의 외부자석이 부착되는 다수개의 지지대와, 상기 외부자석을 회전시키는 회전력을 발생시키는 모터와, 상기 모터의 회전력을 전달하는 회전축을 포함한다.The gun of the sputtering apparatus according to the present invention for achieving the above objects is a cooling water chamber to which the target material is attached to the lower portion and the cooling water is supplied, and an internal magnet fixed to the center of the cooling water chamber to form a magnetic force line around the target material; A plurality of external magnets symmetrically formed outside the cooling water chamber, a plurality of supports to which the plurality of external magnets are attached, a motor for generating rotational force for rotating the external magnets, and a rotating shaft for transmitting the rotational force of the motor do.
이하 본 고안에 따른 스퍼터링 장치의 건의 구조와 동작을 도면을 참조하여 설명한다.Hereinafter, the structure and operation of the gun of the sputtering apparatus according to the present invention will be described with reference to the drawings.
제2도의 a는 본 고안에 따른 스퍼터링 장치의 건의 종 단면도이고, b는 a를 B-B'선으로 절단한 횡 단면도이다.2 is a longitudinal cross-sectional view of the gun of the sputtering apparatus according to the present invention, and b is a transverse cross-sectional view of cutting a at the line B-B '.
본 고안에 따른 스퍼터링 장치의 타켓건(20)은 타켓물질(23)을 하부에 장착하여 스퍼터링 작업중 발생되는 열을 제거하기 위한 냉각수가 공급되는 냉각수 챔버(21)와, 상기 타켓물질(23) 주위에 다수의 자기력선을 형성하기 위하여 상기 냉각수챔버(23)의 중앙에 고정되는 외부에 S극성을 가지는 내부 자석(22) 및 냉각수챔버(23)의 외부에 대칭적으로 위치하여 냉각수챔버(23)쪽이 N극성을 가지는 다수개의 외부자석(27)과, 상기 다수개의 외부자석(27)이 부착되는 다수개의 지지대(26)와 상기 다수개의 외부자석을 회전시키는 회전력을 발생시키는 모터(24)와, 상기 모터(24)의 회전력을 전달하는 회전축(25)을 포함한다. 도면에 도시되지 않았으나 타켓물질(23)이 증착될 웨이퍼(도시되지 않음)는 상술한 건(20)과 마주보게 진공 챔버(도시되지 않음) 내에 장착된다.The target gun 20 of the sputtering apparatus according to the present invention is mounted to the target material 23 to the lower portion of the cooling water chamber 21 is supplied with a cooling water for removing heat generated during the sputtering operation, and the target material 23 surrounding In order to form a plurality of magnetic force lines in the inner side of the cooling water chamber 23 is fixed to the center of the coolant chamber 23 and the inner magnet 22 and the cooling water chamber 23 symmetrically located in the coolant chamber 23 side A plurality of external magnets 27 having this polarity, a plurality of supports 26 to which the plurality of external magnets 27 are attached, and a motor 24 for generating rotational force for rotating the plurality of external magnets, It includes a rotating shaft 25 for transmitting the rotational force of the motor 24. Although not shown in the drawings, a wafer (not shown) on which the target material 23 is to be deposited is mounted in a vacuum chamber (not shown) facing the aforementioned gun 20.
스퍼터링 작업시 본고안의 스퍼터링 장치의 건은 다음과 같이 동작된다.In the sputtering operation, the gun of the sputtering apparatus in this article operates as follows.
웨이퍼가 장착된 진공챔버 내에 아르곤가스를 주입한 후 2개 전극에 전원을 연결시켜 상기 아르곤가스를 이온화시킨다. 즉, 타켓물질(23)에 음의 전원을, 웨이퍼에 양의 전원을 각각 연결시킨다. 타켓물질(23)에서 전자가 웨이퍼방향으로 이동하여 진공챔버 내에 공급된 중성의 아르곤가스와 충돌하게 된다.After argon gas is injected into the vacuum chamber in which the wafer is mounted, the argon gas is ionized by connecting power to two electrodes. That is, the negative power is connected to the target material 23 and the positive power is connected to the wafer, respectively. In the target material 23, electrons move toward the wafer and collide with the neutral argon gas supplied into the vacuum chamber.
이때, 아르곤가스는 이온화되고, 이온화된 아르곤 이온(Ar+)은 마이너스 극인 타켓물질(23)과 충돌하며, 충돌로 인하여 발생되는 타켓물질의 소모부분(23-1)은 웨이퍼상에 증착된다.At this time, the argon gas is ionized, and the ionized argon ions (Ar + ) collide with the target material 23 which is a negative pole, and the consumed portion 23-1 of the target material generated by the collision is deposited on the wafer.
이때 구동전압이 인가된 모터(24)의 회전력은 회전축(25)과 지지대(26)를 통하여 다수개의 외부자석(27)에 전달된다.At this time, the rotational force of the motor 24 to which the driving voltage is applied is transmitted to the plurality of external magnets 27 through the rotation shaft 25 and the support 26.
상기 회전력에 의하여 일정한 방향으로 적당한 속도를 가지고 회전하는 외부자석(27)과 냉각수챔버(21)내에 있는 내부자석(22)사이에서는 발생된 자기력선은 타켓물질(23) 주의에 고르게 형성된다.The lines of magnetic force generated between the outer magnet 27 and the inner magnet 22 in the coolant chamber 21 that rotate at an appropriate speed in a constant direction by the rotational force are formed evenly around the target material 23.
이온화된 아르곤 이온(Ar+)은 마이너스극인 타켓물질(23)과 자기력선을 따라 충돌한다.The ionized argon ions (Ar + ) collide with the target material 23 which is a negative pole along the magnetic field lines.
상기 충돌에 의해 타켓물질(23)의 원자를 떼어내고, 이 방출된 원자가 양극성을 가지는 전극쪽에 장착된 웨이퍼에 상기 분리된 타켓의 원자가 증착된다.By the collision, the atoms of the target material 23 are removed, and the atoms of the separated target are deposited on the wafer mounted on the electrode side in which the released atoms are bipolar.
따라서 본 고안에 따른 스퍼터링 장치의 건은 자기력선을 타켓물질에 고루 발생시켜 타켓물질을 고르게 소모할 수 있고, 지지대가 냉각수 챔버외부에 위치하여 부식을 억제하여 건의 사용기간을 연장할 수 있는 잇점을 가진다.Therefore, the gun of the sputtering apparatus according to the present invention can generate the magnetic force lines evenly on the target material to consume the target material evenly, and the support is located outside the coolant chamber to suppress corrosion and extend the service life of the gun. .
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019960020385U KR200149911Y1 (en) | 1996-07-10 | 1996-07-10 | Gun of sputtering apparatus |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019960020385U KR200149911Y1 (en) | 1996-07-10 | 1996-07-10 | Gun of sputtering apparatus |
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| Publication Number | Publication Date |
|---|---|
| KR980009672U KR980009672U (en) | 1998-04-30 |
| KR200149911Y1 true KR200149911Y1 (en) | 1999-06-15 |
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| KR2019960020385U KR200149911Y1 (en) | 1996-07-10 | 1996-07-10 | Gun of sputtering apparatus |
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| KR (1) | KR200149911Y1 (en) |
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- 1996-07-10 KR KR2019960020385U patent/KR200149911Y1/en not_active IP Right Cessation
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| KR980009672U (en) | 1998-04-30 |
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