KR20010105644A - Etching apparatus - Google Patents

Abstract

A compact replaceable temperature control module (16) for use with semiconductor manufacturing equipment and a controller to control an operating temperature of an internal surface in a process chamber of the equipment. The control module includes a housing (36) having a size which permits the housing to be placed in close proximity to the equipment. A circulatory system (38) is carried by the housing and adapted to couple to the equipment for creating a closed loop system with the equipment for regulating the operating temperature of the internal surface in the process chamber. The circulatory system includes a thermal electric heat exchanger (51) provided with a hollow core element (52) having a temperature different than the unknown temperature and a pump (286) for causing the liquid to flow through the hollow core element.

Description

Etching Device {ETCHING APPARATUS}

The present invention relates to an etching apparatus, and more particularly, to an etching apparatus including a liner installed near the inner wall of the reaction chamber.

In recent years, with the rapid spread of information media such as computers, semiconductor devices are also rapidly developing. In terms of its function, the semiconductor device is required to operate at a high speed and to have a large storage capacity. In response to such demands, manufacturing techniques have been developed for semiconductor devices to improve the degree of integration, reliability, and response speed. Accordingly, the demand for microfabrication techniques such as etching techniques has become strict as a main technique for improving the integration degree of the semiconductor device.

The etching technique is a technique for processing the films in a desired pattern by removing predetermined portions of the films formed on the semiconductor substrate, and in the manufacture of a recent semiconductor device requiring a design rule of 0.15 μm or less, plasma is applied. The etching apparatus used is mainly used.

The etching apparatus may include a load lock chamber that is in charge of waiting and transport of the substrate, a plasma chamber for forming the plasma, a reaction chamber for removing the films using the plasma, and a vacuum for forming the reaction chamber. A vacuum chamber and the like.

Examples of such etching devices are disclosed in U.S. Patent No. 5,228,052 to Kikuchi et al. And U.S. Patent No. 5,888,414 to Collins et al.

Side walls of the reaction chamber are provided with a transfer port for transporting the substrate from outside or inside the reaction chamber and a monitoring window for monitoring the removed films when the films are removed.

A liner having a first opening communicating with the transfer port and a second opening communicating with the monitoring window is detachably installed near the inner wall of the reaction chamber.

An example of a reaction chamber in which the liner is installed is disclosed in US Pat. No. 5,387,777 to Bennett et al.

The liner prevents damage to the inner wall of the reaction chamber due to the plasma furnace, and prevents reaction by-products containing polymers produced when removing the film from adsorbing to the inner wall of the reaction chamber. And by allowing the reaction by-products to be adsorbed on the liner, the maintenance of the reaction chamber to separate the liner to remove the reaction by-products adsorbed on the liner. Therefore, the maintenance can be easily performed by installing the liner.

However, the reaction by-products are frequently adsorbed to the inner wall of the reaction chamber at the position where the first opening and the second opening of the liner are formed. This is because the sizes of the first opening and the second opening are almost similar to those of the transport port and the monitoring window.

Therefore, not only the liner but also reaction by-products adsorbed on the inner wall of the reaction chamber should be removed. Therefore, the time required for the maintenance is extended. It may also damage the inner wall of the reaction chamber when removing the reaction byproduct adsorbed on the inner wall of the reaction chamber.

An object of the present invention is to provide an etching apparatus for minimizing the adsorption of the reaction by-product containing the polymer on the inner wall of the reaction chamber including a liner that is detachably installed.

1 is a configuration diagram for describing a reaction chamber constituting an etching apparatus for forming a pattern in semiconductor manufacturing.

2 is a block diagram illustrating a reaction chamber constituting an etching apparatus according to an embodiment of the present invention.

Fig. 3 is a front view showing the clamp installed in Fig. 2.

Fig. 4 is a side view showing the clamp installed in Fig. 2.

Explanation of symbols on the main parts of the drawings

10: reaction chamber 12: transfer slit

14: monitoring window 16: detector

18: Chuck 20: Lifter

22, 24: opening 26, 26a, 26b: clamp

28: slit 30: liner

W: Substrate

The etching apparatus of the present invention for achieving the above object, to remove a predetermined portion of the film formed on the substrate to form a desired pattern, the side wall to remove the transport port and the film for transporting the substrate from the outside or inside And a reaction chamber in which a monitoring window for monitoring the removed membranes is installed, a first opening communicating with the transfer port and a second opening communicating with the monitoring window and detachably installed near the inner wall of the reaction chamber. And a liner for protecting the reaction chamber inner wall, and a first slit formed to block the first opening and communicating with the transfer port and the first opening to enable transfer of the substrate. A second slot which is provided so as to close the second opening, the blocking means being in communication with the monitoring window and the second opening to enable the monitoring; And second blocking means for forming the litt.

The first blocking means and the second blocking means are installed so as not to move when installed in the first opening and the second opening, and are preferably inserted and fixed.

By installing the first blocking means and the second blocking means, it is possible to minimize the adsorption of the reaction by-products to the reaction chamber inner wall through the first opening and the second opening of the liner.

The substrate is transported through the first slit because the first slit is formed in the first blocking means, and the removed films are monitored through the second slit because the second slit is formed in the second blocking means. . Therefore, the first blocking means and the second blocking means can be actively applied to the etching apparatus including the existing liner.

Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to the accompanying drawings.

1 is a configuration diagram for describing a reaction chamber constituting an etching apparatus for forming a pattern in semiconductor manufacturing.

The etching apparatus is a device in which a film formed on a substrate using plasma removes a predetermined portion to form a desired pattern, and includes a reaction chamber, a load lock chamber, a plasma chamber, and a vacuum chamber.

Referring to FIG. 1, a reaction chamber 10 is provided. On the side wall of the reaction chamber 10, the transfer port 12 to which the substrate W, on which the films for forming the pattern are formed, is transferred from outside or inside, and for monitoring the films to be removed when the films are removed. The monitoring window 14 is installed. The monitoring window 14 is equipped with a detector 16 including a monitoring member for monitoring the monitoring through the monitoring window 14, mainly for monitoring the etch endpoint when removing the film. Position the detector 16. The transfer port 12 may be installed to be connected to the load lock chamber (not shown).

The chuck 18 in which the substrate W is placed is installed in the reaction chamber 10. The chuck 18 has a function of transferring up and down by using a lifter 20 when performing the process.

The liner 30 detachable from the inner wall of the reaction chamber 10 is installed. The liner 30 is installed to prevent the reaction by-products including the polymer generated when the films are removed from being adsorbed on the inner wall of the reaction chamber 10. That is, by allowing the reaction by-products to be adsorbed on the liner 30, the reaction by-products are prevented from being directly adsorbed on the inner wall of the reaction chamber. In addition, the liner 30 prevents the inner wall from being damaged by being exposed to the plasma. In addition, the liner 30 is formed with a first opening 22 communicating with the transfer port 12 and a second opening 24 communicating with the monitoring window 14. Because of this, the transfer and the monitoring may be possible. However, the first opening 22 and the second opening 24 are formed to be similar in size to the transfer port 12 and the monitoring window 14. Therefore, the reaction by-products may flow into the inner wall of the reaction chamber 10 through the first opening 22 and the second opening 24, and may be adsorbed on the inner wall. Therefore, the reaction by-products are prevented from flowing into the inner wall of the reaction chamber 10, and a member is provided that is free from the transfer and the monitoring.

2 is a block diagram illustrating a reaction chamber constituting an etching apparatus according to an embodiment of the present invention.

Referring to FIG. 2, a first clamp 26a that can block the first opening 22 and a second clamp 26b that can block the second opening 24 are provided. The first clasp 26a and the second clasp 26b are provided so as not to move in the first opening 22 and the second opening 24. Accordingly, it can be installed using a screw fastening or the like, and preferably is inserted and fixed so as not to move.

FIG. 3 is a front view illustrating the clamp installed in FIG. 2, and FIG. 4 is a side view illustrating the clamp installed in FIG. 2.

3 and 4 show the clamp 26 including the first clamp 26a and the second clamp 26b. The first clamp 26a and the second clamp 26b are manufactured in the same form and are provided in the first opening 22 and the second opening 24. The first opening 22 and the second opening 24 are manufactured to have a size that can be forcibly fitted. And the slit 28 is formed in the clasp 26. The slit 28 may be divided into a first slit formed in the first clamp 26a and a second slit formed in the second clamp 26b. The first slit may be formed to communicate with the transfer port 12 and the first opening 22, and the second slit may communicate with the monitoring window 14 and the second opening 24. To form. Accordingly, monitoring can be performed when the substrate W is transported and the film is removed. In addition, the size of the slit 26 including the first slit and the second slit may be formed to a size that does not interfere with the transfer of the substrate W on which the films are formed. Accordingly, when it is determined that a film having a thickness of about 10,000 mm on the substrate having a thickness of about 0.75 μm is the maximum size, the size of the first slit may be about 2.0 μm in consideration of the transfer error. The size of the second slit may be equal to or less than the size because the detector 16 located in the monitoring window 14 mainly uses a laser or the like. Therefore, the size of the slit 28 formed in the clasp 26 depends on the size of the first slit formed in the first clasp 26a. In addition, the clasp 26 may select the same material as the inner wall of the reaction chamber 10 and the liner 30, and may select aluminum having anodized on its surface. The clasp 26 may be manufactured by first molding the first opening 22 or the second opening 24 into a shape that can block the mold, and then anodizing the surface.

The reaction by-product that occurs when removing the films by blocking the first opening 22 and the second opening 24 using the first clamp 26a and the second clamp 26b is Flowing through the first opening 22 and the second opening 24 can be minimized. Therefore, the reaction by-products are prevented from being adsorbed on the inner wall of the reaction chamber 10.

Removal of the films using the etching apparatus including the reaction chamber 10 is first carried out through the transfer slit 12 and the first opening 22 and the first slit communicating with the transfer slit 12. It is transferred to the reaction chamber 10. The substrate W is placed on the chuck 18, and a process atmosphere for removing the films is formed in the reaction chamber 10, thereby removing a predetermined portion of the films. At this time, the etching end point and the like are monitored through the monitoring window 14 and the second opening 24 and the second slit communicating with the monitoring window 14. However, when the films are removed, reaction by-products containing polymer are produced, and the reaction by-products are adsorbed on the liner 30 provided with the membrane clamp 26. In addition, when the films are continuously removed, reaction by-products are adsorbed to the liner 30 by a predetermined thickness or more. Thus maintenance is carried out to remove the reaction byproduct periodically or aperiodically.

During maintenance, the liner 30 provided with the first block 26a and the second block 26b is detached and the first block 26a and the second block 26b and the liner ( Only reaction byproducts adsorbed in 30) need be removed. This is because the first block 26a and the second block 26b are provided.

Therefore, since the maintenance corresponds only to the liner including the first clamp and the second clamp, the time required for the maintenance can be shortened. This shortening of time can be expected to improve the productivity of the semiconductor device. In addition, the clasp can be expected to enable the use without modification of the existing device.

Although the above has been described with reference to a preferred embodiment of the present invention, those skilled in the art will be variously modified and changed within the scope of the present invention without departing from the spirit and scope of the invention described in the claims below. I can understand that you can.

Claims (3)

Removing a predetermined portion of the films formed on the substrate to form a desired pattern, the side wall is provided with a transfer port for transferring the substrate from the outside or inside and a monitoring window for monitoring the removed films when removing the films A reaction chamber; A liner for attaching and detaching near the reaction chamber inner wall, the liner having a first opening communicating with the transfer port and a second opening communicating with the monitoring window, and protecting the reaction chamber inner wall; First blocking means disposed to block the first opening and having a first slit communicating with the transfer port and the first opening to enable transfer of the substrate; And And a second blocking means provided to block said second opening and having said monitoring window and a second slit communicating with said second opening so that said monitoring is possible. The etching apparatus according to claim 1, wherein the first blocking means and the second blocking means are inserted into and fixed to the first opening and the second opening. The etching apparatus according to claim 1, wherein the first blocking means and the second blocking means are made of anodized aluminum.