KR20010101004A - 사이드월 제거용 조성물 및 사이드월 제거방법 - Google Patents
사이드월 제거용 조성물 및 사이드월 제거방법 Download PDFInfo
- Publication number
- KR20010101004A KR20010101004A KR1020017005977A KR20017005977A KR20010101004A KR 20010101004 A KR20010101004 A KR 20010101004A KR 1020017005977 A KR1020017005977 A KR 1020017005977A KR 20017005977 A KR20017005977 A KR 20017005977A KR 20010101004 A KR20010101004 A KR 20010101004A
- Authority
- KR
- South Korea
- Prior art keywords
- acid
- sidewall
- semiconductor device
- carboxylic acid
- aminocarboxylic
- Prior art date
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- 239000000203 mixture Substances 0.000 title claims abstract description 64
- 238000000034 method Methods 0.000 title claims abstract description 41
- 150000001732 carboxylic acid derivatives Chemical group 0.000 claims abstract description 32
- 239000004065 semiconductor Substances 0.000 claims abstract description 32
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical compound NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 claims abstract description 30
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 claims abstract description 22
- 150000003839 salts Chemical class 0.000 claims abstract description 14
- 239000007864 aqueous solution Substances 0.000 claims abstract description 10
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 7
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid group Chemical group C(CC(O)(C(=O)O)CC(=O)O)(=O)O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 33
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 24
- 239000002253 acid Substances 0.000 claims description 18
- 238000001312 dry etching Methods 0.000 claims description 18
- 238000004140 cleaning Methods 0.000 claims description 14
- 238000005406 washing Methods 0.000 claims description 13
- 239000004471 Glycine Substances 0.000 claims description 12
- -1 aliphatic aminocarboxylic acid salt Chemical class 0.000 claims description 12
- 235000015165 citric acid Nutrition 0.000 claims description 11
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 6
- OQEBBZSWEGYTPG-UHFFFAOYSA-N 3-aminobutanoic acid Chemical compound CC(N)CC(O)=O OQEBBZSWEGYTPG-UHFFFAOYSA-N 0.000 claims description 6
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims description 6
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 claims description 6
- 125000001931 aliphatic group Chemical group 0.000 claims description 6
- QWCKQJZIFLGMSD-UHFFFAOYSA-N alpha-aminobutyric acid Chemical compound CCC(N)C(O)=O QWCKQJZIFLGMSD-UHFFFAOYSA-N 0.000 claims description 6
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 6
- UCMIRNVEIXFBKS-UHFFFAOYSA-N beta-alanine Chemical compound NCCC(O)=O UCMIRNVEIXFBKS-UHFFFAOYSA-N 0.000 claims description 6
- BTCSSZJGUNDROE-UHFFFAOYSA-N gamma-aminobutyric acid Chemical compound NCCCC(O)=O BTCSSZJGUNDROE-UHFFFAOYSA-N 0.000 claims description 6
- 239000001630 malic acid Substances 0.000 claims description 6
- 235000011090 malic acid Nutrition 0.000 claims description 6
- ARCGXLSVLAOJQL-UHFFFAOYSA-N trimellitic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 ARCGXLSVLAOJQL-UHFFFAOYSA-N 0.000 claims description 6
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 5
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 5
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 5
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 5
- 239000011976 maleic acid Substances 0.000 claims description 5
- 239000011975 tartaric acid Substances 0.000 claims description 5
- 235000002906 tartaric acid Nutrition 0.000 claims description 5
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 5
- 125000003118 aryl group Chemical group 0.000 claims description 4
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 claims description 3
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 claims description 3
- LRQKBLKVPFOOQJ-UHFFFAOYSA-N 2-aminohexanoic acid Chemical compound CCCCC(N)C(O)=O LRQKBLKVPFOOQJ-UHFFFAOYSA-N 0.000 claims description 3
- OXTNCQMOKLOUAM-UHFFFAOYSA-N 3-Oxoglutaric acid Chemical compound OC(=O)CC(=O)CC(O)=O OXTNCQMOKLOUAM-UHFFFAOYSA-N 0.000 claims description 3
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 3
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 claims description 3
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 claims description 3
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 claims description 3
- 239000001361 adipic acid Substances 0.000 claims description 3
- 235000011037 adipic acid Nutrition 0.000 claims description 3
- 235000004279 alanine Nutrition 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 claims description 3
- 229940000635 beta-alanine Drugs 0.000 claims description 3
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 3
- YTIVTFGABIZHHX-UHFFFAOYSA-N butynedioic acid Chemical compound OC(=O)C#CC(O)=O YTIVTFGABIZHHX-UHFFFAOYSA-N 0.000 claims description 3
- FDKLLWKMYAMLIF-UHFFFAOYSA-N cyclopropane-1,1-dicarboxylic acid Chemical compound OC(=O)C1(C(O)=O)CC1 FDKLLWKMYAMLIF-UHFFFAOYSA-N 0.000 claims description 3
- 238000007598 dipping method Methods 0.000 claims description 3
- 229960003692 gamma aminobutyric acid Drugs 0.000 claims description 3
- 235000013922 glutamic acid Nutrition 0.000 claims description 3
- 239000004220 glutamic acid Substances 0.000 claims description 3
- HNEGQIOMVPPMNR-NSCUHMNNSA-N mesaconic acid Chemical compound OC(=O)C(/C)=C/C(O)=O HNEGQIOMVPPMNR-NSCUHMNNSA-N 0.000 claims description 3
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 claims description 3
- HNEGQIOMVPPMNR-UHFFFAOYSA-N methylfumaric acid Natural products OC(=O)C(C)=CC(O)=O HNEGQIOMVPPMNR-UHFFFAOYSA-N 0.000 claims description 3
- 229920001503 Glucan Polymers 0.000 claims description 2
- HNEGQIOMVPPMNR-IHWYPQMZSA-N citraconic acid Chemical compound OC(=O)C(/C)=C\C(O)=O HNEGQIOMVPPMNR-IHWYPQMZSA-N 0.000 claims description 2
- 229940018557 citraconic acid Drugs 0.000 claims description 2
- 150000001734 carboxylic acid salts Chemical class 0.000 claims 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 29
- 238000005260 corrosion Methods 0.000 abstract description 14
- 230000007797 corrosion Effects 0.000 abstract description 14
- 229920002120 photoresistant polymer Polymers 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 239000007789 gas Substances 0.000 description 12
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 229910052736 halogen Inorganic materials 0.000 description 7
- 238000007654 immersion Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 150000001735 carboxylic acids Chemical class 0.000 description 5
- 150000002367 halogens Chemical class 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 4
- 238000004380 ashing Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- FUGYGGDSWSUORM-UHFFFAOYSA-N 4-hydroxystyrene Chemical compound OC1=CC=C(C=C)C=C1 FUGYGGDSWSUORM-UHFFFAOYSA-N 0.000 description 2
- SLXKOJJOQWFEFD-UHFFFAOYSA-N 6-aminohexanoic acid Chemical compound NCCCCCC(O)=O SLXKOJJOQWFEFD-UHFFFAOYSA-N 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910002651 NO3 Inorganic materials 0.000 description 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 239000004480 active ingredient Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 150000007942 carboxylates Chemical class 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- GOJUJUVQIVIZAV-UHFFFAOYSA-N 2-amino-4,6-dichloropyrimidine-5-carbaldehyde Chemical group NC1=NC(Cl)=C(C=O)C(Cl)=N1 GOJUJUVQIVIZAV-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- KPGXRSRHYNQIFN-UHFFFAOYSA-N 2-oxoglutaric acid Chemical compound OC(=O)CCC(=O)C(O)=O KPGXRSRHYNQIFN-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- XFTRTWQBIOMVPK-YFKPBYRVSA-N Citramalic acid Natural products OC(=O)[C@](O)(C)CC(O)=O XFTRTWQBIOMVPK-YFKPBYRVSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 150000004996 alkyl benzenes Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- XFTRTWQBIOMVPK-UHFFFAOYSA-N citramalic acid Chemical compound OC(=O)C(O)(C)CC(O)=O XFTRTWQBIOMVPK-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-L succinate(2-) Chemical compound [O-]C(=O)CCC([O-])=O KDYFGRWQOYBRFD-UHFFFAOYSA-L 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/042—Acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
- C11D3/2082—Polycarboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
- C11D3/2086—Hydroxy carboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
실시예 | 질산농도(질량%) | 유기산(질량%) | 침지시간(분) | 침지온도(℃) | 제거성 | 방식성 |
1 | 1 | 구연산 0.01 | 20 | 50 | ○ | ○ |
2 | 1 | 주석산 0.01 | 20 | 50 | ○ | ○ |
3 | 1 | 사과산 0.01 | 20 | 50 | ○ | ○ |
4 | 1 | 호박산 0.01 | 20 | 50 | ○ | ○ |
5 | 1 | 말레인산 0.01 | 20 | 50 | ○ | ○ |
6 | 1 | 수산 0.01 | 20 | 50 | ○ | ○ |
7 | 30 | 구연산 3.0 | 20 | 50 | ○ | ○ |
8 | 30 | 주석산 3.0 | 20 | 50 | ○ | ○ |
9 | 30 | 사과산 3.0 | 20 | 50 | ○ | ○ |
10 | 30 | 호박산 3.0 | 20 | 50 | ○ | ○ |
11 | 30 | 말레인산 3.0 | 20 | 50 | ○ | ○ |
12 | 30 | 수산 3.0 | 20 | 50 | ○ | ○ |
13 | 1 | 구연산 암모늄0.02 | 20 | 50 | ○ | ○ |
14 | 1 | 사과산 암모늄0.02 | 20 | 50 | ○ | ○ |
15 | 30 | 구연산 암모늄5.0 | 20 | 50 | ○ | ○ |
16 | 30 | 사과산 암모늄5.0 | 20 | 50 | ○ | ○ |
17 | 1 | 글리신 0.1 | 20 | 50 | ○ | ○ |
18 | 1 | 아날린 0.1 | 20 | 50 | ○ | ○ |
19 | 1 | 2-아미노낙산0.1 | 20 | 50 | ○ | ○ |
20 | 15 | 글리신 5.0 | 20 | 50 | ○ | ○ |
21 | 15 | 아날린 5.0 | 20 | 50 | ○ | ○ |
22 | 15 | 2-아미노낙산5.0 | 20 | 50 | ○ | ○ |
23 | 1 | 글리신 암모늄0.2 | 20 | 50 | ○ | ○ |
24 | 1 | 아날린 암모늄0.2 | 20 | 50 | ○ | ○ |
실시예 | 질산농도(질량%) | 구연산농도(질량%) | 글리신농도(질량% ) | 침지시간(분) | 침지온도(℃) | 제거성 | 방식성 |
25 | 30 | 1 | 5 | 5 | 50 | ○ | ○ |
26 | 30 | 1 | 5 | 5 | 50 | ○ | ○ |
비교예 | 질산농도(질량%) | 첨가제농도(질량%) | 침지시간(분) | 침지온도(℃) | 제거성 | 방식성 |
1 | 1 | 0 | 20 | 50 | ○ | × |
2 | 15 | 0 | 10 | 50 | ○ | × |
3 | 30 | 0 | 5 | 50 | ○ | × |
Claims (24)
- 질산과 다가(多價)카르본산, 아미노카르본산 및 그들의 염으로 이루어지는 군(群)에서 선택되는 최소한 1종류의 카르본산류를 함유하는 수용액으로 이루어지는 것을 특징으로 하는 사이드월 제거용 조성물.
- 제1항에 있어서, 상기 질산농도가 0.01 ∼ 50질량% 인 것을 특징으로 하는 사이드월 제거용 조성물.
- 제2항에 있어서, 상기 질산농도가 0.1 ∼ 50질량% 인 것을 특징으로 하는 사이드월 제거용 조성물.
- 제1항에 있어서, 상기 카르본산류농도가 0.0001 ∼ 30질량% 인 것을 특징으로 하는 사이드월 제거용 조성물.
- 제4항에 있어서, 상기 카르본산류농도가 0.1 ∼ 30질량% 인 것을 특징으로 하는 사이드월 제거용 조성물.
- 제1항에 있어서, 상기 다가(多價)카르본산 또는 다가 카르본산염이 지방족(脂肪族) 다가 카르본산또는 지방족 다가 카르본산염인 것을 특징으로 하는 사이드월 제거용 조성물.
- 제1항에 있어서, 상기 다가 카르본산 또는 다가 카르본산염이 방향족(芳香族) 다가 카르본산또는 방향족 다가 카르본산염인 것을 특징으로 하는 사이드월 제거용 조성물.
- 제1항에 있어서, 상기 아미노카르본산 또는 아미노카르본산염이 지방족 아미노카르본산 또는 지방족 아미노카르본산염인 것을 특징으로 하는 사이드월 제거용 조성물.
- 제1항에 있어서, 상기 다가 카르본산 또는 다가 카르본산염이 구연산, 주석산, 사과(Malic)산, 호박산, 말레인산, 수산, 마론산, 글루타루산, 아디핀산, D-글루칸산, 이타콘산, 시트라콘산, 메사콘산, 2-옥소글루타루산, 3-옥소글루타르산, 아세틸렌디카르본산, 1, 1-시클로프로판디카르본산, 트리메리트산, 엔도타르, 글루타민산, 메틸호박산, 시트라말산 및 이들의 염류에서 선택되는 최소한 1종류인 것을 특징으로 하는 사이드월 제거용 조성물.
- 제1항에 있어서, 상기 아미노카르본산 또는 아미노카르본산염이, 글리신, 알라닌, β-알라닌, 2-아미노낙산, 3-아미노낙산, 4-아미노낙산, 2-아미노카프론산, 6-아미노카프론산 및 이들의 염류에서 선택되는 최소한 1종류인 것을 특징으로 하는사이드월 제거용 조성물.
- 제1항, 제7항 또는 제9항중 어느 한 항에 있어서, 상기 다가 카르본산이 구연산인 것을 특징으로 하는 사이드월 제거용 조성물.
- 제1항, 제8항 또는 제10항중 어느 한 항에 있어서, 상기 아미노카르본산이 글리신인 것을 특징으로 하는 사이드월 제거용 조성물.
- 제1항에 있어서, 다가 카르본산 및 아미노카르본산을 함유하는 것을 특징으로 하는 사이드월 제거용 조성물.
- 제13항에 있어서, 상기 다가 카르본산이 구연산이고, 아미노카르본산이 글리신인 것을 특징으로 하는 사이드월 제거용 조성물.
- 반도체 디바이스제조시의 드라이에칭공정으로 형성되는 사이드월을 청구항 1 내지 14중 어느 하나에 기재된 사이드월 제거용 조성물로 세정처리하는 것을 특징으로 하는 사이드월 제거방법.
- 제15항에 있어서, 세정처리가 침지에 의해 행해지는 것을 특징으로 하는 사이드월 제거방법.
- 제16항에 있어서, 세정처리온도가 0 ∼ 80℃ 인 것을 특징으로 하는 사이드월 제거방법.
- 제17항에 있어서, 세정처리온도가 10 ∼ 60℃ 인 것을 특징으로 하는 사이드월 제거방법.
- 제16항에 있어서, 세정처리시간이 1 ∼ 60분인 것을 특징으로 하는 세정방법.
- 제19항에 있어서, 세정처리시간이 1 ∼ 30분인 것을 특징으로 하는 세정방법.
- 반도체 디바이스제조공정의 드라이에칭시에 발생하는 사이드월을 청구항 1 내지 14중 어느 하나에 기재된 사이드월 제거조성물로 세정처리하는 공정을 가지는 것을 특징으로 하는 반도체 디바이스의 제조방법.
- 제21항에 있어서, 반도체 디바이스가 A1 합금배선을 가지는 디바이스인 것을 특징으로 하는 반도체 디바이스의 제조방법.
- 제21항 또는 제22항에 있어서, 반도체 디바이스가 실질적으로 부식되지 않은 A1 합금배선을 가지는 것을 특징으로 하는 반도체 디바이스의 제조방법.
- 반도체 디바이스 제조공정에서의 드라이에칭시에 발생하는 사이드월을 청구항 1 내지 14중 어느 하나에 기재된 사이드월 제거용 조성물로 세정처리함으로써 얻어지는 실질적으로 부식되지 않은 A1 합금배선을 가지는 것을 특징으로 하는 반도체 디바이스.
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JP337594 | 1998-11-27 | ||
JP33759498 | 1998-11-27 | ||
JP19229099 | 1999-07-06 | ||
JP192290 | 1999-07-06 | ||
US15295699P | 1999-09-09 | 1999-09-09 | |
US60/152956 | 1999-09-09 |
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KR20010101004A true KR20010101004A (ko) | 2001-11-14 |
KR100630338B1 KR100630338B1 (ko) | 2006-09-29 |
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EP (1) | EP1139401B1 (ko) |
JP (1) | JP4356962B2 (ko) |
KR (1) | KR100630338B1 (ko) |
AU (1) | AU1410200A (ko) |
WO (1) | WO2000033371A1 (ko) |
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JP2003100715A (ja) * | 2001-09-20 | 2003-04-04 | Mitsubishi Gas Chem Co Inc | 半導体用洗浄剤 |
EP1733421B1 (de) * | 2004-03-30 | 2016-08-10 | Basf Se | Wässrige lösung und verwendung dieser lösung zur entfernung von post-etch residue von halbleitersubstraten |
WO2007045268A1 (en) * | 2005-10-21 | 2007-04-26 | Freescale Semiconductor, Inc. | Method for removing etch residue and chemistry therefor |
US11091727B2 (en) | 2018-07-24 | 2021-08-17 | Versum Materials Us, Llc | Post etch residue cleaning compositions and methods of using the same |
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US2736639A (en) * | 1953-12-16 | 1956-02-28 | Raytheon Mfg Co | Surface treatment of germanium |
JPH07201793A (ja) * | 1993-12-28 | 1995-08-04 | Olympus Optical Co Ltd | 半導体基板の洗浄方法 |
JPH07249607A (ja) * | 1994-03-14 | 1995-09-26 | Fujitsu Ltd | 半導体装置の製造方法 |
JP3074634B2 (ja) * | 1994-03-28 | 2000-08-07 | 三菱瓦斯化学株式会社 | フォトレジスト用剥離液及び配線パターンの形成方法 |
US5466389A (en) * | 1994-04-20 | 1995-11-14 | J. T. Baker Inc. | PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates |
US5612304A (en) * | 1995-07-07 | 1997-03-18 | Olin Microelectronic Chemicals, Inc. | Redox reagent-containing post-etch residue cleaning composition |
JPH1055993A (ja) * | 1996-08-09 | 1998-02-24 | Hitachi Ltd | 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法 |
JP4120714B2 (ja) * | 1998-02-10 | 2008-07-16 | 三菱瓦斯化学株式会社 | 半導体素子の製造方法 |
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- 1999-11-26 KR KR1020017005977A patent/KR100630338B1/ko active IP Right Grant
- 1999-11-26 EP EP99973167.2A patent/EP1139401B1/en not_active Expired - Lifetime
- 1999-11-26 JP JP2000585924A patent/JP4356962B2/ja not_active Expired - Lifetime
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EP1139401B1 (en) | 2015-01-07 |
EP1139401A1 (en) | 2001-10-04 |
EP1139401A4 (en) | 2007-05-02 |
KR100630338B1 (ko) | 2006-09-29 |
AU1410200A (en) | 2000-06-19 |
WO2000033371A1 (fr) | 2000-06-08 |
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