KR20010095268A - Positive photosensitive resist composition - Google Patents

Positive photosensitive resist composition Download PDF

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KR20010095268A
KR20010095268A KR1020010017637A KR20010017637A KR20010095268A KR 20010095268 A KR20010095268 A KR 20010095268A KR 1020010017637 A KR1020010017637 A KR 1020010017637A KR 20010017637 A KR20010017637 A KR 20010017637A KR 20010095268 A KR20010095268 A KR 20010095268A
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resin composition
photosensitive resin
positive photosensitive
group
exposure
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KR1020010017637A
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Korean (ko)
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다카기요시히로
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타키모토 마사아키
후지 휘루무오린 가부시키가이샤
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Polymerisation Methods In General (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

PURPOSE: To provide a photosensitive resin composition developable with an alkaline aqueous solution, having high sensitivity and capable of easily forming a patterned thin film excellent in various characteristics such as flatness, resolution, developability, heat and chemical resistances, adhesion to a substrate, transparency and insulating property, and to provide a photosensitive resin composition capable of easily forming a patterned thin film excellent in low dielectric property as well as in the above various characteristics and a pattern forming method using the composition. CONSTITUTION: Each of the photosensitive resin compositions is a positive type photosensitive resin composition containing at least an alkali-soluble acrylic resin having an unsaturated ethylene group, a 1,2-naphthoquinonediazido- containing compound, a crosslinker and a silane coupling agent. In the pattern forming method in which the positive type photosensitive resin composition is successively subjected to application, 1st exposure, development, 2nd exposure and heating, the quantity of light in the 2nd exposure is 2-15 times that in the 1st exposure.

Description

포지티브 감광성 수지조성물{POSITIVE PHOTOSENSITIVE RESIST COMPOSITION}Positive photosensitive resin composition {POSITIVE PHOTOSENSITIVE RESIST COMPOSITION}

본 발명은 감광성 수지조성물에 관한 것으로서, 특히 마이크로한 패턴구조를 형성할 수 있는 감광성 수지조성물, 더욱 상세하게는, 반도체집적회로(IC), 액정디스플레이(LCD)용 박막트랜지스터(TFT) 회로 등의 회로제조용의 마스크를 작성하기 위한 포지티브 감광성 수지조성물로서, 또한 액정표시소자, 집적회로소자, 고체촬상소자 등의 층간절연막이나 고체촬상소자 등의 마이크로렌즈 등의 영구막 형성재료로서도 바람직한 포지티브 감광성 수지조성물 및 이것을 사용한 패턴형성방법에 관한 것이다.BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to a photosensitive resin composition, and in particular, to a photosensitive resin composition capable of forming a micro pattern structure, and more particularly, to a thin film transistor (TFT) circuit for a semiconductor integrated circuit (IC) and a liquid crystal display (LCD). Positive photosensitive resin composition suitable as a positive photosensitive resin composition for making the mask for circuit manufacturing, and also as a permanent film forming material, such as interlayer insulation films, such as a liquid crystal display element, an integrated circuit element, and a solid-state image sensor, and microlenses, such as a solid-state image sensor, etc. And a pattern forming method using the same.

일반적으로, 액정표시소자, 집적회로소자, 고체촬상소자 등의 전자부품의 제조에 있어서는, 그 열화나 손상을 방지하기 위한 보호막, 소자표면을 평탄화하기 위한 평탄화막, 전기적 절연을 유지하기 위한 절연막 등이 설치되어 있다. 또한, TFT형 액정표시나 집적회로소자에 있어서는 층형으로 배치되는 배선의 사이를 절연하기 위한 층간절연막이 사용되어 있다.In general, in the manufacture of electronic components such as liquid crystal display devices, integrated circuit devices, and solid state imaging devices, a protective film for preventing the deterioration or damage, a flattening film for flattening the surface of the device, an insulating film for maintaining electrical insulation, and the like. Is installed. In a TFT type liquid crystal display or an integrated circuit device, an interlayer insulating film for insulating between wirings arranged in layers is used.

일반적으로, LCD용 TFT, IC 등의 전자부품의 제조에 있어서는, 서브마이크론 이하의 고해상도를 보유하는 동시에 고감도를 보유하는 레지스트가 강하게 요망되어 있다.In general, in the production of electronic components such as LCD TFTs and ICs, there is a strong demand for a resist having a high sensitivity of submicron or less and having high sensitivity.

예컨대, IC실리콘웨이퍼의 웨트에칭(wet etching)방식으로 형성되는 레지스트패턴에는 기판과의 밀착성이나 에칭액에 침해되지 않는 내약품성이 필요로 된다. 또한, 이온 인프라(ion infra)공정이 가해지는 경우에는, 고온가열에 견디는 내열성이 요구된다. 또한 TFT의 절연재료로서 사용하는 데에는 투명성도 필요하다. 그러나, 가열처리를 실시함으로써 변색하기 때문에, 액정컬러필터의 보호막이나 마이크로렌즈 등의 광학재료로 사용할 수 없다는 결점이 있다.For example, the resist pattern formed by the wet etching method of IC silicon wafer requires the adhesiveness with a board | substrate or the chemical-resistance which does not interfere with an etching liquid. In addition, when an ion infra process is applied, heat resistance that withstands high temperature heating is required. In addition, transparency is also required for use as the insulating material of the TFT. However, since it discolors by performing heat processing, there is a drawback that it cannot be used as an optical material such as a protective film or a microlens of a liquid crystal color filter.

또한, 층간절연막 형성은 필요한 공정수가 많고, 층간절연막에 요구되는 제특성, 즉 평탄성, 고해상성, 현상성, 내열성, 내약품성, 기판과의 밀착성, 투명성, 절연성 등을 양호하게 확보하는 것이 곤란하고, 이들 제특성을 모두 만족하는 감광성 수지조성물이 없었다.In addition, the formation of the interlayer insulating film requires a large number of processes, and it is difficult to ensure good characteristics such as flatness, high resolution, developability, heat resistance, chemical resistance, adhesion to the substrate, transparency, and insulation properties required for the interlayer insulating film. There was no photosensitive resin composition which satisfies all these properties.

또한, 층간절연막에 관해서는 디바이스의 고밀도화에 따라, 크로스토크의 발생을 제어하기 위한 저유전성이 요망되지만, 종래의 감광성 수지조성물로는 이들 제특성과 저유전성을 양립시키는 점에서 충분히 만족스러운 것은 아니였다.Further, as for the interlayer insulating film, low dielectric constant for controlling the generation of crosstalk is desired as the device becomes higher, but conventional photosensitive resin compositions are not sufficiently satisfactory in terms of achieving both these characteristics and low dielectric constant. It was.

본 발명의 목적은 알칼리성 수용액에서 형상할 수 있고, 고감도이고, 게다가 평탄성, 고해상성, 현상성, 내열성, 내약품성, 기판과의 밀착성, 투명성, 절연성 등의 제특성의 우수한 패턴형 박막을 용이하게 형성할 수 있는 감광성 수지조성물, 또한, 종래, 상기 제특성과 동시에 실현하는 것이 곤란하였던 저유전특성의 우수한 패턴형 박막을 용이하게 형성할 수 있는 감광성 수지조성물 및 이것을 사용한 패턴형성방법을 제공하는 것에 있다.An object of the present invention can be formed in an alkaline aqueous solution, it is highly sensitive, and easy to form a patterned thin film having excellent properties such as flatness, high resolution, developability, heat resistance, chemical resistance, adhesion to the substrate, transparency, insulation, etc. To provide a photosensitive resin composition which can be formed, and also a photosensitive resin composition which can easily form an excellent patterned thin film having low dielectric properties, which has been difficult to realize simultaneously with the above-described characteristics, and a pattern forming method using the same. have.

본 발명에 있어서는, 하기 구성의 감광성 수지조성물 및 이것을 사용한 패턴형성방법이 제공되고, 본 발명의 상기 목적이 달성된다.In this invention, the photosensitive resin composition of the following structure and the pattern formation method using the same are provided, and the said objective of this invention is achieved.

(1) 불포화 에틸렌기를 보유하는 알칼리가용성 아크릴계 수지, 1,2-나프토퀴논디아지드기 함유화합물, 가교제, 및 실란결합제를 적어도 함유하는 것을 특징으로 하는 포지티브 감광성 수지조성물.(1) A positive photosensitive resin composition comprising at least an alkali-soluble acrylic resin having an unsaturated ethylene group, a 1,2-naphthoquinone diazide group-containing compound, a crosslinking agent, and a silane binder.

(2) 불소계 계면활성제를 함유하는 것을 특징으로 하는 상기(1)에 기재한 포지티브 감광성 수지조성물.(2) The positive photosensitive resin composition as described in said (1) containing fluorine-type surfactant.

(3) 불포화 에틸렌기를 보유하지 않은 알칼리가용성 아크릴계 수지를 병용하는 것을 특징으로 하는 상기(1) 또는 (2)에 기재한 포지티브 감광성 수지조성물.(3) The positive photosensitive resin composition as described in said (1) or (2) characterized by using together alkali-soluble acrylic resin which does not have unsaturated ethylene group.

(4) 가교제는, 멜라민계 화합물인 것을 특징으로 하는 상기 (1)∼(3)의 어느 한 항에 기재한 포지티브 감광성 수지조성물.(4) The positive photosensitive resin composition according to any one of (1) to (3), wherein the crosslinking agent is a melamine-based compound.

(5) 가교제는, 에폭시계 화합물인 것을 특징으로 하는 상기 (1)∼(4)의 어느 한 항에 기재한 포지티브 감광성 수지조성물.(5) The positive photosensitive resin composition according to any one of (1) to (4), wherein the crosslinking agent is an epoxy compound.

(6) 불소화합물을 함유하는 것을 특징으로 하는 상기 (1)∼(5)의 어느 한 항에 기재한 포지티브 감광성 수지조성물.(6) The positive photosensitive resin composition as described in any one of said (1)-(5) containing fluorine compound.

(7) 불소화합물은 에폭시 화합물인 것을 특징으로 하는 상기 (6)에 기재한 포지티브 감광성 수지조성물.(7) The positive photosensitive resin composition according to the above (6), wherein the fluorine compound is an epoxy compound.

(8) 상기 (1)∼(7)의 어느 한 항에 기재한 포지티브 감광성 수지조성물을 도포, 제1노광, 현상, 제2노광, 가열처리를 순차실시하는 공정에 있어서, 제2노광의 광량이 제1노광의 2∼15배인 것을 특징으로 하는 패턴형성방법.(8) The amount of light of the second exposure in the step of applying the positive photosensitive resin composition according to any one of (1) to (7), and sequentially performing the first exposure, the development, the second exposure, and the heat treatment. It is 2 to 15 times of this 1st exposure, The pattern formation method characterized by the above-mentioned.

이하, 본 발명의 감광성 수지조성물에 관하여 상술한다.Hereinafter, the photosensitive resin composition of this invention is explained in full detail.

우선, 이 본발명의 감광성 수지조성물에 배합되는 각 성분에 관하여 설명한다.First, each component mix | blended with the photosensitive resin composition of this invention is demonstrated.

[Ⅰ] 불포화 에틸렌기를 보유하는 알칼리가용성 아크릴계 수지(이하, 「아크릴계 수지(A)」라고도 함)[I] Alkali-soluble acrylic resin which has unsaturated ethylene group (henceforth "acrylic resin (A)")

아크릴계 수지(A)는 아크릴산, 메타크릴산의 어느 1종 이상(이하, (메타)아크릴산으로 기재한다.)의 중합체 또는 공중합체와 불포화 에틸렌기를 보유하는 관능성화합물의 (메타)아크릴산의 카르복실기를 통한 반응에 의해 합성될 수 있다. 또한, 아크릴계 수지(A)는 (메타)아크릴산 및 이것과 공중합 가능한 임의의 모너머, 예컨대, 메틸아크릴레이트, 메틸메타크릴레이트, 에틸아크릴레이트, 에틸메타크릴레이트, 프로필아크릴레이트, 프로필메타크릴레이트, 이소프로필아크릴레이트, 이소프로필메타크릴레이트, n-부틸아크릴레이트, n-부틸메타크릴레이트, tert-부틸아크릴레이트, tert-부틸메타크릴레이트, 2-히드록시에틸아크릴레이트, 2-히드록시에틸메타크릴레이트, 2-히드록시프로필아크릴에이트, 2-히드록시프로필메타크릴레이트, 벤질아크릴레이트, 벤질메타크릴레이트, 페녹시아크릴레이트, 페녹시메타크릴레이트, 이소보르닐아크릴레이트, 이소보르닐메타크릴레이트, 글리시딜아크릴레이트, 글리시딜메타크릴레이트, 스티렌, 아크릴아미드, 메타크릴아미드, 아크릴로니트릴의 1종 이상과의 공중합체와, 불포화 에틸렌기를 보유하는 관능성화합물의적어도 (메타)아크릴산의 카르복실기를 통한 반응에 의해, 이 공중합체에 불포화 에틸렌기를 도입할 수 있다. 여기에서, 이 관능성화합물은 (메타)아크릴산과 공중합 가능한 모노머에 결합된 관능기, 예컨대, 카르복실기, 히드록실기, 아미노기 등과 결합시킬 수도 있다.The acrylic resin (A) is a polymer or copolymer of any one or more of acrylic acid and methacrylic acid (hereinafter referred to as (meth) acrylic acid) and a carboxyl group of (meth) acrylic acid of a functional compound having an unsaturated ethylene group. Can be synthesized by reaction through. In addition, acrylic resin (A) is (meth) acrylic acid and any monomer copolymerizable with this, for example, methyl acrylate, methyl methacrylate, ethyl acrylate, ethyl methacrylate, propyl acrylate, propyl methacrylate. , Isopropyl acrylate, isopropyl methacrylate, n-butyl acrylate, n-butyl methacrylate, tert-butyl acrylate, tert-butyl methacrylate, 2-hydroxyethyl acrylate, 2-hydroxy Ethyl methacrylate, 2-hydroxypropyl acrylate, 2-hydroxypropyl methacrylate, benzyl acrylate, benzyl methacrylate, phenoxy acrylate, phenoxy methacrylate, isobornyl acrylate, isobor One kind of yl methacrylate, glycidyl acrylate, glycidyl methacrylate, styrene, acrylamide, methacrylamide, acrylonitrile An unsaturated ethylene group can be introduced into this copolymer by reaction with the copolymer of the above and the carboxyl group of the (meth) acrylic acid at least of the functional compound which has an unsaturated ethylene group. Here, this functional compound can also be combined with the functional group couple | bonded with the monomer copolymerizable with (meth) acrylic acid, for example, a carboxyl group, a hydroxyl group, an amino group, etc.

여기에서, 불포화 에틸렌기로는 CH2= CH-기 또는 그 결합수소원자의 1이상이 알킬기 등의 치환기로 치환된 기를 의미한다.Herein, the unsaturated ethylene group means a group in which at least one CH 2 = CH- group or a bonded hydrogen atom thereof is substituted with a substituent such as an alkyl group.

불포화 에틸렌기를 보유하는 관능성화합물로는, 바람직하게는 CH2= CH(CH2)nR (R은 수산기, 아미노기, 에폭시기 등의 관능기가 열거된다. n은 1∼5의 정수, 바람직하게는 1∼2의 정수이다.A functional compound having an unsaturated ethylene is preferably CH 2 = CH (CH 2) n R (R is a functional group of a hydroxyl group, an amino group, an epoxy group, etc. are exemplified. N is an integer 1 to 5, preferably It is an integer of 1-2.

아크릴계 수지(A)는 불포화 에틸렌기를 아크릴계 수지(A) 구성모노머 단위에 대하여 1∼70몰%의 범위로 보유하고 있는 것이 바람직하다.It is preferable that acrylic resin (A) has an unsaturated ethylene group in 1 to 70 mol% with respect to an acrylic resin (A) constituent monomer unit.

또한, 아크릴계 수지(A)는 아크릴산, 메타크릴산의 어느 1종 이상과, 공중합 가능한 불포화 에틸렌기를 보유하는 모노머, 또한 메틸아크릴레이트 등의 상기와 같은 공중합 가능한 다른 모노머 등과의 공중합에 의해서도 합성될 수 있다.The acrylic resin (A) may also be synthesized by copolymerization with any one or more of acrylic acid and methacrylic acid, a monomer having an unsaturated ethylene group copolymerizable, and other copolymerizable monomers such as methyl acrylate. have.

이 아크릴계 수지(A)는 질량평균분자량이 1,000∼100,000의 것이 바람직하고, 보다 바람직하게는 3000∼70,000이다. 질량평균분자량이 지나치게 낮으면 막형성능이 부족하여 현상시에 막박리가 극심하게 되고, 한편, 지나치게 높으면 현상시간이 장시간으로 되여 기판에 악영향을 미치는 일이 있다.The acrylic resin (A) preferably has a mass average molecular weight of 1,000 to 100,000, more preferably 3000 to 70,000. If the mass average molecular weight is too low, the film-forming ability is insufficient, and film peeling is extremely severe at the time of development. On the other hand, if the mass average molecular weight is too high, the development time is prolonged, which may adversely affect the substrate.

이 아크릴계 수지(A)의 배합량은, 아크릴계 수지(A), 1,2-나프토퀴논디아지드기 함유화합물, 및 가교제의 총계 100질량부중, 35∼95중량부의 범위에서 배합하는 것이 바람직하고, 보다 바람직하게는 45∼85질량부이다. 배합량이 지나치게 낮으면 투명성이나 절연성, 도막성이 저하하고, 한편, 배합량이 지나치게 많으면 감도가 저하하고, 경화불량을 일으키기 때문에 바람직하지 않다.It is preferable to mix | blend the compounding quantity of this acrylic resin (A) in 35-95 weight part in 100 mass parts of total amounts of an acrylic resin (A), a 1, 2- naphthoquinone diazide group containing compound, and a crosslinking agent, More preferably, it is 45-85 mass parts. If the blending amount is too low, transparency, insulation, and coating film properties decrease. On the other hand, if the blending amount is too large, the sensitivity is lowered and curing failure is not preferable.

본 발명의 감광성 수지조성물은 이 아크릴계 수지(A)에 있어서의 불포화 에틸렌기를 보유하지 않은 알칼리가용성 아크릴계 수지를 병용할 수 있다. 이 병용할 수 있는 수지를 아크릴계 수지(a)라고도 기재한다.The photosensitive resin composition of this invention can use together alkali-soluble acrylic resin which does not hold the unsaturated ethylene group in this acrylic resin (A). This resin which can be used together is also described as acrylic resin (a).

아크릴계 수지(a)로는, 아크릴계 수지(A)를 제조하기 위해 불포화 에틸렌기를 보유하는 관능성화합물과 반응시키는 상기 아크릴계 수지, 그의 에스테르체 등이 열거된다.As acrylic resin (a), the said acrylic resin, its ester body, etc. which make it react with the functional compound which has an unsaturated ethylene group in order to manufacture acrylic resin (A) are mentioned.

아크릴계 수지(a)는 아크릴계 수지(A)에 대하여, 보통 0∼50질량%, 바람직하게는 0∼30질량% 사용된다.Acrylic resin (a) is 0-50 mass% normally with respect to acrylic resin (A), Preferably 0-30 mass% is used.

[Ⅱ] 1,2-나프토퀴논디아지드기 함유화합물[II] 1,2-naphthoquinone diazide group-containing compound

본 발명에서 사용되는 1,2-나프토퀴논디아지드기 함유화합물로는 1,2-나프토퀴논디아지드술폰산에스테르가 사용된다. 이 에스테르로는 다가 페놀의 수산기의 전체 또는 일부가 1,2-나프토퀴논디아지드술폰산디에스테르화된 화합물을 사용할 수 있고, 구체적으로 다가페놀의 수산기의 20∼100%가 1,2-나프토퀴논디아지드술폰산디에스테르화된 화합물을 사용할 수 있다.As the 1,2-naphthoquinone diazide group-containing compound used in the present invention, 1,2-naphthoquinone diazide sulfonic acid ester is used. As this ester, the compound in which all or part of the hydroxyl group of polyhydric phenol is 1,2-naphthoquinone diazide sulfonic-acid diesterized can be used, Specifically, 20-100% of the hydroxyl group of polyhydric phenol is 1,2-naph. Toquinone diazide sulfonic acid diesterized compounds can be used.

1,2-나프토퀴논디아지드기 함유화합물로는, 예컨대, 2,3,4-트리히드록시벤조페논-1,2-나프토퀴논디아지드-4-술폰산에스테르, 2,3,4-트리히드록시벤조페논-1,2-나프토퀴논디아지드-5-술폰산에스테르, 2,4,6-트리히드록시벤조페논-1,2-나프토퀴논디아지드-4-술폰산에스테르, 2,4,6-트리히드록시벤조페논-1,2-나프토퀴논디아지드-5-술폰산에스테르 등의 트리히드록시벤조페논의 1,2-나프토퀴논디아지드술폰산에스테르, 2,2',4,4'-테트라히드록시벤조페논-1,2-나프토퀴논디아지드-4-술폰산에스테르, 2,2',4,4'-테트라히드록시벤조페논-1,2-나프토퀴논디아지드-5-술폰산에스테르, 2,3,4,3'-테트라히드록시벤조페논-1,2-나프토퀴논디아지드-4-술폰산에스테르, 2,3,4,3'-테트라히드록시벤조페논-1,2-나프토퀴논디아지드-5-술폰산에스테르, 2,3,4,4'-테트라히드록시벤조페논-1,2-나프토퀴논디아지드-4-술폰산에스테르, 2,3,4,4'-테트라히드록시벤조페논-1,2-나프토퀴논디아지드-5-술폰산에스테르, 2,3, 4,2'-테트라히드록시-4'-메틸벤조페논-1,2-나프토퀴논디아지드-4-술폰산에스테르, 2,3,4,2'-테트라히드록시-4'-메틸벤조페논-1,2-나프토퀴논디아지드-5-술폰산에스테르, 2,3,4,4'-테트라히드록시-3'-메톡시벤조페논-1,2-나프토퀴논디아지드-4-술폰산에스테르, 2,3,4,4'-테트라히드록시-3'-메톡시벤조페논-1,2-나프토퀴논디아지드-5-술폰산에스테르 등의 테트라히드록시벤조페논의 1,2-나프노퀴논디아지드술폰산에스테르, 2,3,4,2',6'-펜타히드록시벤조페논-1,2-나프토퀴논디아지드-4-술폰산에스테르, 2,3,4,2',6'-펜타히드록시벤조페논-1,2-나프토퀴논디아지드-5-술폰산에스테르 등의 펜타히드록시벤조페논의 1,2-나프토퀴논디아지드술폰산에스테르, 2,4,6,3',4' ,5'-헥사히드록시벤조페논-1,2-나프토퀴논디아지드-4-술폰산에스테르, 2,4,6,3',4' ,5'-헥사히드록시벤조페논-1.2-나프토퀴논디아지드-5-술폰산에스테르, 3,4,5,3',4' ,5'-헥사히드록시벤조페논-1,2-나프토퀴논디아지드-4-술폰산에스테르, 3,4,5,3',4',5'-헥사히드록시벤조페논-1,2-나프토퀴논디아지드-5-술폰산에스테르 등의 헥사히드록시벤조페논의 1,2-나프토퀴논디아지드술폰산에스테르, 비스(2,4'-디히드록시페닐)메탄-1,2-나프토퀴논디아지드-4-술폰산에스테르, 비스(2,4'-디히드록시페닐)메탄-1,2-나프토퀴논디아지드-5-술폰산에스테르, 비스(p-히드록시페닐)메탄-1,2-나프토퀴논디아지드-4-술폰산에스테르, 비스(p-히드록시페닐)메탄-1,2-나프토퀴논디아지드-5-술폰산에스테르, 트리(p-히드록시페닐)메탄-1,2-나프토퀴논디아지드-4-술폰산에스테르, 트리(p-히드록시페닐)메탄-1,2-나프토퀴논디아지드-5-술폰산에스테르, 1,1,1-트리(p-히드록시페닐)에탄-1,2-나프토퀴논디아지드-4-술폰산에스테르, 1,1,1-트리(p-히드록시페닐)에탄-1,2-나프토퀴논디아지드-5-술폰산에스테르, 비스(2,3,4-트리히드록시페닐)메탄-1,2-나프토퀴논디아지드-4-술폰산에스테르, 비스(2,3,4-트리히드록시페닐)메탄-1,2-나프토퀴논디아지드-5-술폰산에스테르, 2,2'-비스(2,3,4-트리히드록시페닐)프로판-1,2-나프토퀴논디아지드-4-술폰산에스테르, 2,2-비스(2,3,4-트리히드록시페닐)프로판-1,2-나프토퀴논디아지드-5-술폰산에스테르, 1,1,3-트리스(2,5-디메틸-4-히드록시페닐)-3-페닐프로판-1,2-나프토퀴논디다지드-4-술폰산에스테르, 1,1,3-트리스(2,5-디메틸-4-히드록시페닐)-3-페닐프로판-1,2-나프토퀴논디아지드-5-술폰산에스테르, 4,4'-[1-[4-[1-[4-히드록시페닐]-1-메틸에틸]페닐]에틸리덴]비스페놀-1,2-나프토퀴논디아지드-4-술폰산에스테르, 4,4'-[1-[4-[1-[4-히드록시페닐]-1-메틸에틸]페닐]에틸리덴]비스페놀-1,2-나프토퀴논디아지드-5-술폰산에스테르 , 비스(2,5-디메틸-4-히드록시페닐)-2-히드록시페닐메탄-1,2-나프토퀴논디아지드-4-술폰산에스테르, 비스(2,5-디메틸-4-히드록시페닐)-2-히드록시페닐메탄-1,2-나프토퀴논디아지드-5-술폰산에스테르, 3,3,3',3'-테트라메틸-1,1'-스피로인덴-5,6,7,5',6',7'-헥산올-1,2-나프토퀴논디아지드-4-술폰산에스테르, 3,3,3',3'-테트라메틸-1,1'-스피로인덴-5,6,7,5',6',7'-헥산올-1,2-나프토퀴논디아지드-5-술폰산에스테르, 2,2,4-트리메틸-7,2',4'-트리히드록시플라반-1,2-나프토퀴논디아지드-4-술폰산에스테르, 2,2,4-트리메틸-7,2',4'-트리히드록시플라반-1,2-나프토퀴논디아지드-4-술폰산에스테르, 2,2,4-트리메틸-7,2',4'-트리히드록시플라반-1,2-나프토퀴논디아지드-5-술폰산에스테르 등의(폴리히드록시페닐) 알칸의 1,2-나프토퀴논디아지드술폰산에스테르가 열거된다.Examples of the 1,2-naphthoquinone diazide group-containing compound include 2,3,4-trihydroxybenzophenone-1,2-naphthoquinone diazide-4-sulfonic acid ester, 2,3,4- Trihydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonic acid ester, 2,4,6-trihydroxybenzophenone-1,2-naphthoquinonediazide-4-sulfonic acid ester, 2, 1,2-naphthoquinone diazide sulfonic acid ester of trihydroxy benzophenone, such as 4, 6- trihydroxy benzophenone 1, 2- naphthoquinone diazide-5- sulfonic acid ester, 2, 2 ', 4 , 4'-tetrahydroxybenzophenone-1,2-naphthoquinonediazide-4-sulfonic acid ester, 2,2 ', 4,4'-tetrahydroxybenzophenone-1,2-naphthoquinonediazide -5-sulfonic acid ester, 2,3,4,3'-tetrahydroxybenzophenone-1,2-naphthoquinone diazide-4-sulfonic acid ester, 2,3,4,3'-tetrahydroxybenzophenone -1,2-naphthoquinonediazide-5-sulfonic acid ester, 2,3,4,4'-tetrahydroxybenzophenone-1,2-naphthoqui Nondiazide-4-sulfonic acid ester, 2,3,4,4'-tetrahydroxybenzophenone-1,2-naphthoquinone diazide-5-sulfonic acid ester, 2,3,4,2'-tetrahydride Hydroxy-4'-methylbenzophenone-1,2-naphthoquinonediazide-4-sulfonic acid ester, 2,3,4,2'-tetrahydroxy-4'-methylbenzophenone-1,2-naphtho Quinonediazide-5-sulfonic acid ester, 2,3,4,4'-tetrahydroxy-3'-methoxybenzophenone-1,2-naphthoquinone diazide-4-sulfonic acid ester, 2,3,4 1,2-naphnoquinone diazide sulfonic acid ester of tetrahydroxy benzophenone, such as a 4'- tetrahydroxy-3'- methoxy benzophenone- 1, 2- naphthoquinone diazide-5- sulfonic acid ester, 2,3,4,2 ', 6'-pentahydroxybenzophenone-1,2-naphthoquinone diazide-4-sulfonic acid ester, 2,3,4,2', 6'-pentahydroxybenzophenone 1,2-naphthoquinone diazide sulfonic acid ester of pentahydroxy benzophenone, such as -1, 2- naphthoquinone diazide-5- sulfonic acid ester, 2, 4, 6, 3 ', 4', 5'- Heck Hydroxybenzophenone-1,2-naphthoquinonediazide-4-sulfonic acid ester, 2,4,6,3 ', 4', 5'-hexahydroxybenzophenone-1.2-naphthoquinonediazide-5 -Sulfonic acid ester, 3,4,5,3 ', 4', 5'-hexahydroxybenzophenone-1,2-naphthoquinone diazide-4-sulfonic acid ester, 3,4,5,3 ', 4 1,2-naphthoquinone diazide sulfonic acid ester, bis (2,4) of hexahydroxy benzophenone, such as a ", 5" -hexahydroxy benzophenone 1, 2- naphthoquinone diazide-5- sulfonic acid ester '-Dihydroxyphenyl) methane-1,2-naphthoquinonediazide-4-sulfonic acid ester, bis (2,4'-dihydroxyphenyl) methane-1,2-naphthoquinonediazide-5- Sulfonic acid ester, bis (p-hydroxyphenyl) methane-1,2-naphthoquinonediazide-4-sulfonic acid ester, bis (p-hydroxyphenyl) methane-1,2-naphthoquinonediazide-5- Sulfonic acid ester, tri (p-hydroxyphenyl) methane-1,2-naphthoquinonediazide-4-sulfonic acid ester, tri (p-hydroxyphenyl) methane-1,2- Ftoquinone diazide-5-sulfonic acid ester, 1,1,1-tri (p-hydroxyphenyl) ethane-1,2-naphthoquinone diazide-4-sulfonic acid ester, 1,1,1-tri (p -Hydroxyphenyl) ethane-1,2-naphthoquinonediazide-5-sulfonic acid ester, bis (2,3,4-trihydroxyphenyl) methane-1,2-naphthoquinonediazide-4-sulfonic acid Ester, bis (2,3,4-trihydroxyphenyl) methane-1,2-naphthoquinonediazide-5-sulfonic acid ester, 2,2'-bis (2,3,4-trihydroxyphenyl) Propane-1,2-naphthoquinonediazide-4-sulfonic acid ester, 2,2-bis (2,3,4-trihydroxyphenyl) propane-1,2-naphthoquinonediazide-5-sulfonic acid ester , 1,1,3-tris (2,5-dimethyl-4-hydroxyphenyl) -3-phenylpropane-1,2-naphthoquinonediazide-4-sulfonic acid ester, 1,1,3-tris ( 2,5-dimethyl-4-hydroxyphenyl) -3-phenylpropane-1,2-naphthoquinonediazide-5-sulfonic acid ester, 4,4 '-[1- [4- [1- [4- Hydroxyphenyl] -1-methylethyl] phenyl] ethylidene] ratio Sphenol-1,2-naphthoquinonediazide-4-sulfonic acid ester, 4,4 '-[1- [4- [1- [4-hydroxyphenyl] -1-methylethyl] phenyl] ethylidene] Bisphenol-1,2-naphthoquinonediazide-5-sulfonic acid ester, bis (2,5-dimethyl-4-hydroxyphenyl) -2-hydroxyphenylmethane-1,2-naphthoquinonediazide-4 Sulfonic acid esters, bis (2,5-dimethyl-4-hydroxyphenyl) -2-hydroxyphenylmethane-1,2-naphthoquinonediazide-5-sulfonic acid esters, 3,3,3 ', 3' Tetramethyl-l, l'-spiroindene-5,6,7,5 ', 6', 7'-hexanol-l, 2-naphthoquinone diazide-4-sulfonic acid ester, 3,3, 3 ', 3'-tetramethyl-1,1'-spiroindene-5,6,7,5', 6 ', 7'-hexanol-1,2-naphthoquinonediazide-5-sulfonic acid ester , 2,2,4-trimethyl-7,2 ', 4'-trihydroxyflavan-1,2-naphthoquinone diazide-4-sulfonic acid ester, 2,2,4-trimethyl-7,2' , 4'-trihydroxyflavan-1,2-naphthoquinone diazide-4-sulfonic acid ester, 2,2,4-trimethyl-7,2 ', 4'-trihydroxyflavane And 1,2-naphthoquinone diazide sulfonic acid esters of (polyhydroxyphenyl) alkanes such as -1,2-naphthoquinone diazide-5-sulfonic acid ester.

또한 이것들의 1,2-나프토퀴논디아지드기 함유화합물은, 단독으로 또는 2종이상 조합시켜서 사용할 수도 있다. 상기와 같은 1,2-나프토퀴논디아지드기 함유화합물은, 예컨대, 1,2-나프토퀴논디아지드술폰산의 할로겐화물을 염기촉매의 존재하에서, 대응하는 다가 페놀(다가 히드록시화합물)로 에스테르화시킴으로써 얻게 된다. 이와 같은 에스테르화 반응에는, 히드록시화합물의 수산기 1몰에 대하여, 1,2-나프토퀴논디아지드술폰산의 할로겐화물은 보통 1.0∼1.2몰의 양으로 사용되는 것이 바람직하다.In addition, these 1,2-naphthoquinone diazide group containing compounds can also be used individually or in combination of 2 or more types. Such a 1,2-naphthoquinone diazide group-containing compound is, for example, a halide of 1,2-naphthoquinone diazide sulfonic acid as a corresponding polyhydric phenol (polyhydric hydroxy compound) in the presence of a base catalyst. Obtained by esterification. In such an esterification reaction, the halide of 1,2-naphthoquinonediazidesulfonic acid is preferably used in an amount of 1.0 to 1.2 moles with respect to 1 mole of hydroxyl groups of the hydroxy compound.

1,2-나프토퀴논디아지드기 함유화합물은, 본 발명에 관한 감광성 수지조성물중, 아크릴계 수지(A) 100중량부에 대하여, 보통 5∼100중량부, 바람직하게는 10∼50중량부 함유하고 있는 것이 바람직하다. 5중량부 미만이면, 노광에 의해 생성되는 산량이 적기 때문에, 이 조성물로부터 형성되는 도막은 노광부와 미노광부의 현상액에 대한 용해도차가 작게 되어서 패턴닝이 곤란하게 되는 일이 있고, 한편 100중량부를 초과하면, 단시간의 광조사로는 1,2-나프토퀴논디아지드기 함유화합물이 충분히 분해되지 않고 잔존하기 때문에, 감도가 저하하여 버리는 것이 있다.The 1,2-naphthoquinone diazide group-containing compound is usually 5 to 100 parts by weight, preferably 10 to 50 parts by weight, based on 100 parts by weight of the acrylic resin (A) in the photosensitive resin composition according to the present invention. It is desirable to do it. If the amount is less than 5 parts by weight, the amount of acid produced by the exposure is small, so that the coating film formed from this composition may have a small difference in solubility with respect to the developing solution of the exposed portion and the unexposed portion, which may make patterning difficult, while 100 parts by weight When exceeding, since a 1,2-naphthoquinone diazide group containing compound will not fully decompose | disassemble by a short time light irradiation, a sensitivity may fall.

[Ⅲ] 가교제[III] crosslinking agent

본 발명에 사용되는 가교제는, 상기 아크릴계 수지(A)의 카르복실기 등의 관능기와 가열에 의해 반응하고, 가교결합하는 기능을 보유하는 것이면, 특별히 제한되어야만 하는 것은 아니지만, 바람직하게는 하기식(Ⅰ)으로 나타내는 멜라민계 화합물이 열거된다.The crosslinking agent used in the present invention is not particularly limited as long as the crosslinking agent reacts with a functional group such as a carboxyl group of the acrylic resin (A) by heating and has a function of crosslinking, but preferably the following formula (I) The melamine type compound shown by these is mentioned.

식(Ⅰ)중, R5는 -N R51R52{R51, R52는 각각 수소 또는 -CH2OR53(R53은 수소 또는 탄소수 1∼6의 알킬기 또는 시클로알킬기를 나타낸다.)를 나타낸다.} 또는 페닐기를 나타내고, R1, R2, R3, R4는 각각 수소 또는 -CH2OR53(R53는 수소 또는 탄소수 1∼6의 알킬기 또는 시클로알킬기를 나타낸다.)를 나타낸다.Equation (Ⅰ) of, R 5 is -NR 51 R 52 {R 51, R 52 are each an H or -CH 2 OR 53 (R 53 represents an alkyl group or a cycloalkyl group having 1 to 6 carbon atoms or hydrogen.) .} Or a phenyl group, and R 1 , R 2 , R 3 , and R 4 each represent hydrogen or —CH 2 OR 53 (R 53 represents hydrogen or an alkyl group having 1 to 6 carbon atoms or a cycloalkyl group.).

상기 R53의 알킬기 또는 시클로알킬기로는, 메틸기, 에틸기, n-프로필기, 이소프로필기, n-부틸기, 이소부틸기, t-부틸기, n-아밀기, 이소아밀기, n-헥실기, 시클로헥실기 등이 열거된다.As said alkyl group or cycloalkyl group of R <53> , a methyl group, an ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group, t-butyl group, n-amyl group, isoamyl group, n-hex Real group, cyclohexyl group, etc. are mentioned.

본 발명에 사용되는 식(Ⅰ)에서 나타내는 가교제의 구체예로는, 예컨대 헥사메틸올멜라민( R1, R2, R3, R4, R51, R52는 각각 -CH2OH) 및 알킬화 헥사메틸올멜라민( R1, R2, R3, R4, R51, R52는 각각 -CH2OR53 ,또 R53는 바람직하게는 탄소수 1∼3), 부분 메틸올화 멜라민(R1, R2, R3, R4, R51, R52로부터 선택되는 1∼5개는 -CH2OH로 또 비선택은 수소) 및 그 알킬화체(바람직하게는 R53는 탄소수 1∼3), 테트라메틸올벤조구안아민(R1, R2, R3, R4는 각각은 -CH2OH로, R5는 페닐기) 및 알킬화 테트라메틸올벤조구안아민(바람직하게는 R53는 탄소수 1∼3), 부분 메틸올화 벤조구안아민 (R1, R2, R3, R4로부터 선택되는 1∼3개는 -CH2OH로 또 비선택은 수소) 및 그 알킬화체(바람직하게는 R53는 탄소수 1∼3), 또는 상기 화합물의 올리고머(바람직하게는, 단량체 2∼5개) 등을 열거할 수 있다.Specific examples of the crosslinking agent represented by the formula (Ⅰ) used in the present invention include, for example, hexamethyl melamine (R 1, R 2, R 3, R 4, R 51, R 52 are each -CH 2 OH) and alkylated Hexamethylol melamine (R 1 , R 2 , R 3 , R 4 , R 51 , R 52 are each -CH 2 OR 53 , R 53 is preferably 1 to 3 carbon atoms), partially methylolated melamine (R 1 , 1 to 5 selected from R 2 , R 3 , R 4 , R 51 , and R 52 are -CH 2 OH and non-selective hydrogen; and their alkylates (preferably R 53 has 1 to 3 carbon atoms) , Tetramethylolbenzoguanamine (R 1 , R 2 , R 3 , R 4 are each -CH 2 OH, R 5 is a phenyl group) and alkylated tetramethylolbenzoguanamine (preferably R 53 has 1 carbon atom). 3), partially methylolated benzoguanamine ( 1 to 3 selected from R 1 , R 2 , R 3 , and R 4 are -CH 2 OH and non-selective hydrogen) and their alkylates (preferably R 53 is 1 to 3 carbon atoms, or an oligomer of the compound (preferably, 2 to 5 dimers), and the like.

본 발명에서 사용되는 다른 가교제로는, 에폭시계화합물, 페놀계화합물, 아조계화합물, 이소시아네이트계 화합물 등이 열거되고, 그 중에서 에폭시계화합물이 바람직하다.As another crosslinking agent used by this invention, an epoxy type compound, a phenol type compound, an azo type compound, an isocyanate type compound, etc. are mentioned, Among these, an epoxy type compound is preferable.

예컨대, 에폭시계 경화제로는, 분자중에 평균적으로 1개 이상의 에폭시기를 보유한 화합물이고, 예컨대, n-부틸글리시딜에테르, 2-에톡시헥실글시딜에테르, 페닐글리시딜에테르, 알릴글리시딜에테르, 에틸렌글리콜디글리시딜에테르, 프로필렌글리콜디글리시딜에테르, 네오펜틸글리콜디글리시딜에테르, 글리세롤폴리글리시딜에테르, 소르비톨폴리글리시딜에테르 등의 글리시딜에테르, 아디프산디글리시딜에스테르, o-프탈산디글리시딜에스테르 등의 글리시딜에스테르, 3,4-에폭시시클로헥실메틸(3,4-에폭시시클로헥산)카르복실레이트, 3,4-에폭시-6-메틸시클로헥실메틸 (3,4-에폭시-6-메틸시클로헥산)카르복실레이트, 비스(3,4-에폭시-6-메틸시클로헥실메틸)아디페이트, 디시클로펜탄디엔옥사이드, 비스(2,3-에폭시시클로펜틸)에테르 등의 지환식 에폭시 등이 열거된다.For example, as an epoxy-type hardening | curing agent, it is a compound which has an average of 1 or more epoxy groups in a molecule | numerator, For example, n-butylglycidyl ether, 2-ethoxyhexyl glycidyl ether, phenylglycidyl ether, allyl glycy Glycidyl ethers, such as dil ether, ethylene glycol diglycidyl ether, propylene glycol diglycidyl ether, neopentyl glycol diglycidyl ether, glycerol polyglycidyl ether, and sorbitol polyglycidyl ether Glycidyl esters such as acid diglycidyl ester and o-phthalic acid diglycidyl ester, 3,4-epoxycyclohexylmethyl (3,4-epoxycyclohexane) carboxylate, 3,4-epoxy-6- Methylcyclohexylmethyl (3,4-epoxy-6-methylcyclohexane) carboxylate, bis (3,4-epoxy-6-methylcyclohexylmethyl) adipate, dicyclopentanediene oxide, bis (2,3 -Alicyclic epoxy such as epoxycyclopentyl) ether It is listed.

가교제는 아크릴계 수지(A)에 대하여 2∼50질량부의 범위에서 배합하는 것이 바람직하고, 보다 바람직하게는 4∼40질량부이다. 배합량이 조금 초과하면 감도가 저하하고 현상불량을 일으키는 일이 있고, 한편 배합량이 많이 초과하면 투명성, 절연성이나 도막성이 나쁘게 되는 경우가 있다.It is preferable to mix | blend a crosslinking agent in 2-50 mass parts with respect to acrylic resin (A), More preferably, it is 4-40 mass parts. When the compounding amount is slightly exceeded, the sensitivity may be lowered and developing defects may be caused. On the other hand, when the compounding amount is exceeded too much, transparency, insulation and coating properties may be deteriorated.

[Ⅳ]실란결합제[IV] silane binder

본 발명의 감광성 수지조성물은, 실란결합제를 함유함으로써, 기판과의 밀착성을 향상시킬 수 있다. 실란결합제로는, 바람직하게는 관능성 실란결합제 등이 열거된다. 관능성 실란결합제로는 하기의 것이 열거되지만, 그 중에서도 S3 및 S4가 바람직하다.The photosensitive resin composition of this invention can improve adhesiveness with a board | substrate by containing a silane binder. As a silane binder, Preferably a functional silane binder etc. are mentioned. Although the following are mentioned as a functional silane binder, Especially, S3 and S4 are preferable.

S1. 비닐트리에톡시실란 : CH2= CHSi (OC2H5)3 S1. Vinyltriethoxysilane: CH 2 = CHSi (OC 2 H 5 ) 3

S2. 비닐트리스(β-메톡시에톡시)실란 :S2. Vinyltris (β-methoxyethoxy) silane:

CH2= CHSi (OCH2H4OCH3)3 CH 2 = CHSi (OCH 2 H 4 OCH 3 ) 3

S3. γ-글리시드옥시프로필트리메톡시실란 :S3. γ-glycidoxypropyltrimethoxysilane:

S4. γ-메타아크릴로옥시프로필트리메톡시실란 :S4. γ-methacrylooxypropyltrimethoxysilane:

S5. γ-머캅토프로필트리메톡시실란 :S5. γ-mercaptopropyltrimethoxysilane:

HSC3H6Si (OCH3)3 HSC 3 H 6 Si (OCH 3 ) 3

실란결합제는, 아크릴계 수지(A)에 대하여 0.01∼5질량부 사용되는 것이 바람직하다.It is preferable that 0.01-5 mass parts of silane binders are used with respect to acrylic resin (A).

본 발명에서는, 감광성 수지조성물의 도포성의 향상 예컨대, 스트리에이션 (striation) (도포줄무늬 자국)의 방지, 또한 도막의 현상성을 향상시켜, 평탄성의 또다른 개선을 위한 계면활성제를 배합할 수도 있다. 계면활성제로는, 예컨대 폴리옥시에틸렌라우릴에테르, 폴리옥시에틸렌스테아릴에테르, 폴리옥시에틸렌올레일에테르 등의 폴리옥시에틸렌알킬에테르류, 폴리옥시에틸렌옥틸페닐에테르, 폴리옥시에틸렌노닐페닐에테르 등의 폴리옥시에틸렌아릴에테르류, 폴리옥시에틸렌디라우레이트, 폴리옥시에틸렌디스테아레이트 등의 폴리옥시에틸렌디알킬에스테르류 등의 비이온계 계면활성제, 에프톱EF301, 동303, 동352(니이아키타화성 (주) 제), 메가파크 F171, 동F172, 동F173, 동F177(대일본 잉크화학공업 (주) 제), 플로라아드 FC-430, 동FC-431(수미토모스리엠 (주) 제), 아사히가아드 AG710, 서어프론 S-382, 동SC-101, 동SC-102, 동SC-103, 동SC-104, 동SC-105, 동SC-106(아사히초자 (주) 제) 등의 명칭으로 시판되고 있는 불소계 계면활성제, 오르가노실록산폴리머-KP341(신월화학공업 (주) 제), (메타)아크릴산계 공중합체 폴리프로-No.57, 95(공영사 유지화학공업 (주) 제) 등이 열거된다. 이들 계면활성제 중에서도 불소계 계면활성제가 바람직하다.In the present invention, a surfactant may be blended to improve the coatability of the photosensitive resin composition, for example, to prevent striation (coating stripes) and to improve the developability of the coating film, and to further improve flatness. As surfactant, For example, polyoxyethylene alkyl ethers, such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether, polyoxyethylene octyl phenyl ether, polyoxyethylene nonyl phenyl ether, etc. Nonionic surfactants, such as polyoxyethylene dialkyl esters, such as polyoxyethylene aryl ether, polyoxyethylene dilaurate, and polyoxyethylene distearate, F-top EF301, copper 303, copper 352 (Niakita Chemical property) Mega Park F171, East F172, East F173, East F177 (manufactured by Japan Nippon Ink Chemical Co., Ltd.), Floraard FC-430, East FC-431 (manufactured by Sumitomo Industries Co., Ltd.) Asahi Gaard AG710, Supron S-382, East SC-101, East SC-102, East SC-103, East SC-104, East SC-105, East SC-106 (made by Asahi Choza Co., Ltd.) Fluorine-based surfactant, organosiloxane polymer-KP341 (Shinwol Chemical Co., Ltd.) (Meth) acrylic-acid copolymer polypro-No.57, 95 (manufactured by Kogyo Oil and Chemicals Co., Ltd.), etc. are mentioned. Among these surfactants, fluorine-based surfactants are preferable.

이들은 2종이상 사용할 수도 있다. 이와 같은 계면활성제는 감광성 수지조성물중의 전량을 100질량부로 할때, 2질량부이하 바람직하게는 1질량부이하의 양으로 함유하고 있어도 좋다.These can also be used 2 or more types. Such surfactant may be contained in an amount of 2 parts by mass or less, preferably 1 part by mass or less, when the total amount of the photosensitive resin composition is 100 parts by mass.

본 발명의 감광성 수지조성물은, 그 경화막중에 불소원자가 함유되어 있도록, 바람직하게는 본 발명의 감광성 수지조성물의 고형분중에 불소원자를 3질량%이상, 보다 바람직하게는 5∼30질량% 함유시킴으로써, 다른 제특성에 추가하여 저유전특성의 우수한 패턴형박막을 보다 용이하게 형성할 수 있다.The photosensitive resin composition of the present invention preferably contains 3% by mass or more, more preferably 5 to 30% by mass of the fluorine atom in the solid content of the photosensitive resin composition of the present invention so that the fluorine atom is contained in the cured film. In addition to other properties, an excellent patterned thin film of low dielectric properties can be formed more easily.

이와 같은 저유전특성의 우수한 패턴형 박막을 제공할 수 있는 불소원자원으로, 본 발명에서의 불소화합물이 사용된다.As the fluorine source resource capable of providing such a patterned thin film having excellent low dielectric properties, the fluorine compound in the present invention is used.

본 발명에서의 불소화합물은, 감광시나 가열시에 아크릴계 수지(A)에 함유되는 카르복실기에 결합되어도 좋고, 또는 가교제에 결합되어도 좋고, 또한 불소화합물끼리 중합되어도 좋고, 이들과 반응하지 않고 감광성 수지조성물의 혼합물로서 존재하고 있어도 좋다.The fluorine compound in the present invention may be bonded to the carboxyl group contained in the acrylic resin (A) at the time of photosensitive or heating, or may be bonded to a crosslinking agent, or the fluorine compounds may be polymerized with each other, and the photosensitive resin composition does not react with these. It may exist as a mixture of these.

불소화합물의 전형적인 예는, 하기(1)∼(8)에 나타내는 불소함유기가 결합된 화합물이다.Typical examples of the fluorine compound are compounds in which the fluorine-containing group shown in the following (1) to (8) is bonded.

(1)F(CF2)n-(1) F (CF 2 ) n-

(2)(CF3)2CF(CF2)n-2-(2) (CF 3 ) 2 CF (CF 2 ) n-2-

(3) H(CF2)n-(3) H (CF 2 ) n

(4) CF3CHFCF2-(4) CF 3 CHFCF 2-

(5) (CF3)2CH-(5) (CF 3 ) 2 CH-

(6) -(CF2CClF)-(6)-(CF 2 CClF)-

여기에서, n은 보통 1∼10, 바람직하게는 5∼8이다. 또한, 식(7) 및 식(8)에 있어서, 벤젠환의 수소는 불소 이외의 치환기로 치환되어 있어도 좋고, 벤젠환은 지환식화되어도 좋다.Here, n is 1-10 normally, Preferably it is 5-8. In addition, in Formula (7) and Formula (8), the hydrogen of a benzene ring may be substituted by substituents other than fluorine, and the benzene ring may be alicyclic.

불소화합물로서, 알콜류, 카르본산류, 에폭시 화합물류, 올레핀류, 할로겐화 화합물, 아크릴레이트류, 메타크릴레이트류, 에스테르류, 에테르류, 아민류 등을 열거할 수 있다. 그 중에서도 에폭시 화합물류, 아크릴레이트류, 메타크릴레이트, 아민류가 바람직하다.Examples of the fluorine compound include alcohols, carboxylic acids, epoxy compounds, olefins, halogenated compounds, acrylates, methacrylates, esters, ethers, amines, and the like. Especially, epoxy compounds, acrylates, methacrylate, and amines are preferable.

이들 에폭시기를 함유하는 에폭시 화합물류, 아크릴레이트류, 메타크릴레이트류, 아민류의 구체예로서, 하기 표1에 나타내는 기와 상기 (1)∼(8)에 나타내는 불소함유기가 결합한 화합물을 열거할 수 있다.As specific examples of the epoxy compounds, acrylates, methacrylates, and amines containing these epoxy groups, compounds in which the group shown in Table 1 below and the fluorine-containing group shown in the above (1) to (8) are combined can be enumerated. .

상기 표1중에, 예컨대 에폭시 화합물류로서 에폭시를 함유하는 기가 기재되어 있지만, 이 에폭시 화합물류란 이 기와 상기 (1)∼(8)에 기재되어 있는 불소함유기 등이 결합하여 형성되는 여러 종류의 에폭시 화합물을 의미한다. 그 외의 화합물류에 대해서도 마찬가지이다.In Table 1, for example, a group containing an epoxy is described as the epoxy compound, but the epoxy compound is a group of various kinds formed by combining the group and the fluorine-containing group described in the above (1) to (8). It means an epoxy compound. The same applies to other compounds.

불소화합물로는, 그 중에서도 에폭시 화합물류 및 아민류가 바람직하고, 특히 상기 (7) 및 (8) 등의 방향족계의 불소함유기를 보유한 불소화방향족 에폭시 화합물, 상기 (1)등의 지방족의 불소함유기를 보유한 불소화지방족 화합물이 바람직하다.Especially as a fluorine compound, epoxy compounds and amines are preferable, Especially the fluorinated aromatic epoxy compound which has aromatic fluorine-containing groups, such as said (7) and (8), and aliphatic fluorine-containing groups, such as said (1) Preferred fluorinated aliphatic compounds are preferred.

불소화방향족 에폭시 화합물의 바람직한 예로는,Preferred examples of the fluorinated aromatic epoxy compound include

2,2'-[1,3-페닐렌비스[[2,2,2,-트리플루오르-1-(트리플루오르메틸)에틸리덴]옥시메틸렌]]비스-옥실란2,2 '-[1,3-phenylenebis [[2,2,2, -trifluoro-1- (trifluoromethyl) ethylidene] oxymethylene]] bis-oxysilane

2,2-비스[4-(2,3-에폭시프로폭시)페닐]헥사플루오르프로판2,2-bis [4- (2,3-epoxypropoxy) phenyl] hexafluoropropane

이 열거되고, 불소화지방화합물의 바람직한 예로는Listed and preferred examples of fluorinated fatty compounds

이 열거된다.This is listed.

본 발명에서 사용할 수 있는 광중합 개시제로는, 광라디칼 중합개시제, 광양이온 중합개시제, 및 광아민 발생제 등이 열거된다.As a photoinitiator which can be used by this invention, an optical radical polymerization initiator, a photocationic polymerization initiator, a photoamine generator, etc. are mentioned.

광라디칼 중합제로는, 예컨대 벤질, 디아세틸 등의 α-디케톤류, 벤조인 등의 아실로인류, 벤조인메틸에테르, 벤조인에틸에테르, 벤조인이소프로필에테르 등의 아실로인에테르류, 티옥산톤, 2,4-디에틸티옥산톤, 티옥산톤-4-술폰산 등의 티옥산톤류, 벤조페논, 4,4'-비스(디메틸아미노)벤조페논, 4,4'-비스(디에틸아미노)벤조페논 등의 벤조페논류, 미클러케톤류, 아세토페논, 2-(4-톨루엔술포닐옥시)-2-페닐아세토페논, p-디메틸아미노아세토페논, α,α'-디메톡시아세톡시벤조페논, 2,2'-디메톡시-2-페닐아세토페논, p-메톡시아세토페논, 2-메틸[4-(메틸티오)페닐]-2-몰포리노-1-프로판온, 2-벤질-2-디메틸아미노-1-(4-몰포리노페닐)-프탄-1-온 등의 아세토페논류, 안트라퀴논, 1,4-나프토퀴논 등의 퀴논류, 페나실클로라이드, 트리할로메틸페닐술폰, 트리스(트리할로메틸)-s-트리아진 등의 할로겐화합물, 아실포스핀옥시드류, 디-t-부틸퍼옥시드 등의 과산화물 등이 열거된다.As an optical radical polymerizer, For example, (alpha)-diketones, such as benzyl and diacetyl, acyl phosphorus, such as benzoin, acyl phosphorus, such as benzoin methyl ether, benzoin ethyl ether, and benzoin isopropyl ether, Thioxanthones such as oxanthone, 2,4-diethyl thioxanthone and thioxanthone-4-sulfonic acid, benzophenone, 4,4'-bis (dimethylamino) benzophenone, 4,4'-bis (di Benzophenones, such as ethylamino) benzophenone, mycloketones, acetophenone, 2- (4-toluenesulfonyloxy) -2-phenylacetophenone, p-dimethylamino acetophenone, (alpha), (alpha) '-dimethoxy acetone Methoxybenzophenone, 2,2'-dimethoxy-2-phenylacetophenone, p-methoxyacetophenone, 2-methyl [4- (methylthio) phenyl] -2-morpholino-1-propanone, 2- Acetophenones such as benzyl-2-dimethylamino-1- (4-morpholinophenyl) -phthalan-1-one, quinones such as anthraquinone and 1,4-naphthoquinone, phenacyl chloride, and trihalo Methylphenylsulfone, Tris ) -S- peroxides such as halogen compounds, acylphosphine oxy Drew, di -t- butyl peroxide, such as triazine are exemplified.

또한 광라디칼 중합제로서, 예컨대 IRGACURE-184, 동261, 동369, 동500, 동651, 동907(치바-가이기 사제), Darocur-1173, 동1116, 동2959, 동1664, 동4043 (머크재팬 사제), KAYACURE-DETX, 동MBP, 동DMBI, 동EPA, 동OA (일본화약 (주)제), VICURE-10, 동55 (STAUFFER Co.LTD 제), TRIGONAL P1 (AKZO Co.LTD 제), SANDORAY 1000 (SANDOZ Co.LTD 제), DEAP (APJOHN Co.LTD 제), QUANTACURE-PDO, 동ITX, 동EPD (WARD BLEKINSOP Co.LTD 제) 등의 시판품을 사용할 수 있다.Moreover, as an optical radical polymerizer, for example, IRGACURE-184, copper 261, copper 369, copper 500, copper 651, copper 907 (made by Chiba-Geigi), Darocur-1173, copper 1116, copper 2959, copper 1664, copper 4043 ( Merck Japan Co., Ltd., KAYACURE-DETX, East MBP, East DMBI, East EPA, East OA (made by Nippon Kayaku Co., Ltd.), VICURE-10, East 55 (made by STAUFFER Co.LTD), TRIGONAL P1 (AKZO Co.LTD Commercially available products such as SANDORAY 1000 (manufactured by SANDORAY Co.LTD), DEAP (manufactured by APJOHN Co.LTD), QUANTACURE-PDO, copper ITX, and copper EPD (manufactured by WARD BLEKINSOP Co.LTD).

또한 광양이온 중합개시제로는 디아조늄염류, 트리페닐술포늄염류, 메탈로센화합물류, 디아릴요오드늄염류, 니트로벤질술포네이트류, α-술포닐옥시케톤류, 디페닐디술폰류, 이미딜술포네이트류가 열거된다.As photocationic polymerization initiators, diazonium salts, triphenylsulfonium salts, metallocene compounds, diaryl iodonium salts, nitrobenzylsulfonates, α-sulfonyloxyketones, diphenyl disulfones and imidyl sulfo Nates are listed.

광양이온 중합개시제로서, 아데카울트라세트 PP-33, OPTMER SP-150, 동170(욱전화공업 (주) 제)(디아조늄염), OPTOMER SP-150, 170(욱전화공업 (주) 제)(술포늄염), IRGACURE 261(치바-가이기 (주) 제) (메타로센화합물) 등의 시판품을 사용할 수 있다.As photocationic polymerization initiator, Adekaultrasset PP-33, OPTMER SP-150, East 170 (manufactured by Wook Tong Industry Co., Ltd.) (diazonium salt), OPTOMER SP-150, 170 (manufactured by Uk Tong Industry Co., Ltd.) Commercial products, such as (sulfonium salt) and IRGACURE 261 (made by Chiba-Geigi Co., Ltd.) (metarosene compound), can be used.

광아민 발생제로는 니트로벤지카버미메이트류, 아미노술포나이트류가 열거된다. 이들 광중합개시제는 노광조건(예컨대, 산소분위기하이거나, 무산소분위기하이거나) 등에 따라 적당히 선택되어 사용된다. 또한, 이들 광중합개시제는 2종이상 조합시켜 사용할 수 있다.Examples of the photoamine generator include nitrobenzi carbamates and aminosulfonites. These photoinitiators are suitably selected and used according to exposure conditions (for example, in an oxygen atmosphere or an oxygen-free atmosphere). In addition, these photoinitiators can be used in combination of 2 or more type.

광중합개시제는, 본 발명의 감광성 수지조성물의 고형분 100질량부에 대하여, 바람직하게는 0∼5질량부, 보다 바람직하게는 0∼2질량부의 양으로 배합된다.The photopolymerization initiator is preferably added in an amount of 0 to 5 parts by mass, and more preferably 0 to 2 parts by mass with respect to 100 parts by mass of the solid content of the photosensitive resin composition of the present invention.

광중합개시제의 양이 5질량부를 초과하면, 본 반응의 감광성 수지조성물로부터 형성되는 도막표면에서 광중합개시제가 블리드 아웃(bleed out)되거나, 가열처리가 저하하거나 하는 일이 있다.When the amount of the photopolymerization initiator exceeds 5 parts by mass, the photopolymerization initiator may bleed out on the surface of the coating film formed from the photosensitive resin composition of the present reaction, or the heat treatment may decrease.

또한, 본 발명의 포지티브 감광성 수지조성물은, 광중합성 단량체를 함유할 수 있고, 그 양 및 종류를 선정함으로써 포지티브형의 물성을 조정하는 수단으로 사용할 수 있다. 광중합성 단량체는 노광에 의해 중합되는 성분이다. 구체적으로는, 단관능성 또는 다관능성의 메타크릴레이트 또는 아크릴레이트(이하, (메타)아크릴레이로 기재한다.)가 바람직하게 열거된다. 또한, 광중합성단량체는 불소를 함유하고 있어도 좋다.Moreover, the positive photosensitive resin composition of this invention can contain a photopolymerizable monomer, and can be used as a means of adjusting the positive physical property by selecting the quantity and kind. The photopolymerizable monomer is a component which is polymerized by exposure. Specifically, monofunctional or polyfunctional methacrylate or acrylate (hereinafter, referred to as (meth) acrylate) is preferably listed. In addition, the photopolymerizable monomer may contain fluorine.

단관능성 (메타)아크릴레이트로는, 예컨대 알로닉스M-101, 동M-111, 동M-114(동아합성화학공업 (주) 제), KAYARADTC-110S, 동TC-12OS(일본화약 (주) 제), V-158, V-2311(오사카유기화학공업 (주) 제) (시판품) 등이 열거된다.As monofunctional (meth) acrylate, for example, Alonics M-101, Copper M-111, Copper M-114 (made by Dong-A Synthetic Chemical Co., Ltd.), KAYARADTC-110S, and Copper TC-12OS (Japan Explosives Co., Ltd.) ), V-158, V-2311 (made by Osaka Organic Chemical Industry Co., Ltd.) (commercially available product), etc. are mentioned.

2관능성 (메타)아크릴레이트로는, 예컨대 알로닉스M-210, 동M-240, 동M-6200(동아합성화학공업 (주) 제), KAYARAD DDDA, 동HX-220, 동R-604(일본화약 (주) 제) , V260, V312, V335HP(오사카유기화학공업 (주) 제) (시판품) 등이 열거된다.As a bifunctional (meth) acrylate, for example, Alonics M-210, Copper M-240, Copper M-6200 (made by Dong-A Synthetic Chemical Co., Ltd.), KAYARAD DDDA, Copper HX-220, Copper R-604 (Made by Nippon Kayaku Co., Ltd.), V260, V312, V335HP (made by Osaka Organic Chemical Industry Co., Ltd.) (commercially available product), etc. are mentioned.

3관능성 이상의 (메타)아크릴레이트로는, 예컨대 트리메틸올프로판트리(메타)아크릴레이트, 펜타에리쓰리톨트리(메타)아크릴레이트, 트리스아크릴로일옥시에틸포스페이트, 펜타에리쓰리톨테트라(메타)아크릴레이트, 디펜타에리쓰리톨펜타(메타)아크릴레이트, 디펜타에리쓰리톨헥사(메타)아크릴레이트 등이 열거되고, 구체적으로 알코닉스M-309, 동M-400, 동M-405, 동M-450, 동M-7100, 동M-8030, 동M-8060(동아합성화학공업 (주) 제), KAYARAD DPHA, 동TMPTA, 동DPCA-20, 동-30, 동-60, 동-120(일본화약 (주) 제), V-295, 동-300, 동-360, 동-GPT, 동-3PA, 동-400(오사카 유기화학공업 (주) 제), PPZ(출광석유화학 (주) 제) 등의 시판품이 열거된다.As (meth) acrylate more than trifunctional, a trimethylol propane tri (meth) acrylate, a pentaerythritol tri (meth) acrylate, a trisacryloyloxy ethyl phosphate, a pentaerythritol tetra (meth), for example Acrylate, dipentaerythritol penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and the like, and specific examples thereof include Alkonix M-309, Copper M-400, Copper M-405, and Copper. M-450, M-7100, M-8030, M-8060 (made by Dong-A Synthetic Chemical Co., Ltd.), KAYARAD DPHA, TMPTA, DDPCA-20, D-30, D-60, D- 120 (made by Nippon Kayaku Co., Ltd.), V-295, East-300, East-360, East-GPT, East-3PA, East-400 (made by Osaka Organic Chemical Industry Co., Ltd.), PPZ Note) Commercial items, such as (i), are listed.

이들 중에서, 알로닉스M-400, KAYARAD DPHA 등의 3관능성 이상의 다관능성 (메타)아크릴레이트가 바람직하게 사용된다.Among these, trifunctional or higher polyfunctional (meth) acrylates such as Alonics M-400 and KAYARAD DPHA are preferably used.

이들의 단량체는 2종이상 조합시켜서 사용할 수도 있다.These monomers can also be used in combination of 2 or more type.

중합성단량체는 아크릴계 수지(A) 100질량부에 대하여 바람직하게는 0∼10질량부, 보다 바람직하게는 0∼3질량부 배합된다.The polymerizable monomer is preferably 0 to 10 parts by mass, more preferably 0 to 3 parts by mass with respect to 100 parts by mass of the acrylic resin (A).

본 발명의 감광성 수지조성물은, 아크릴계 수지(A), 1,2-나프토퀴논디아지드기 함유화합물, 가교제 및 실란결합제, 그외에 계면활성제, 불소화합물 등을 용매에 용해시켜서 조제한다.The photosensitive resin composition of the present invention is prepared by dissolving an acrylic resin (A), a 1,2-naphthoquinone diazide group-containing compound, a crosslinking agent and a silane binder, a surfactant, a fluorine compound and the like in a solvent.

본 발명의 감광성 수지조성물을 용해하기 위한 용매로는, 에틸렌글리콜모노메틸에테르, 에틸렌글리콜모노에틸에테르, 에틸렌글리콜모노프로필에테르, 에틸렌글리콜모노부틸에테르, 에틸렌글리콜디메틸에테르, 에틸렌글리콜디에틸에테르, 에틸렌글리콜디프로필에테르, 프로필렌글리콜모노메틸에테르, 프로필렌글리콜모노에틸에테르, 프로필렌글리콜모노프로필에테르, 프로필렌글리콜모노부틸에테르, 프로필렌글리콜디메틸에테르, 프로필렌글리콜디에틸에테르, 디에틸렌글리콜모노메틸에테르, 디에틸렌글리콜모노에틸에테르, 디에틸렌글리콜모노페닐에테르, 디에틸렌글리콜디메틸에테르, 디에틸렌글리콜디에틸에테르, 에틸렌글리콜모노메틸에테르아세테이트, 에틸렌글리콜모노에틸에테르아세테이트, 에틸렌글리콜모노프로필에테르아세테이트, 에틸렌글리콜모노부틸에테르아세테이트, 에틸렌글리콜모노페닐에테르아세테이트, 디에틸렌글리콜모노메틸에테르아세테이트, 디에틸렌글리콜모노에틸에테르아세테이트, 디에틸렌글리콜모노프로필에테르아세테이트, 디에틸렌글리콜모노부틸에테르아세테이트, 디에틸렌글리콜모노페닐에테르아세테이트, 프로필렌글리콜모노메틸에테르아세테이트, 프로필렌글리콜모노에틸에테르아세테이트, 프로필렌글리콜모노프로필에테르아세테이트, 2-메톡시부틸아세테이트, 3-메톡시부틸아세테이트, 4-메톡시부틸아세테이트, 2-메틸-3-메톡시부틸아세테이트, 3-메틸-3-메톡시부틸아세테이트, 3-에틸-3-메톡시부틸아세테이트, 2-에톡시부틸아세테이트, 4-에톡시부틸아세테이트, 4-프로폭시부틸아세테이트, 2-메톡시펜틸아세테이트, 3-메톡시펜틸아세테이트, 4-메톡시펜틸아세테이트, 2-메틸-3-메톡시펜틸아세테이트, 3-메틸-3-메톡시펜틸아세테이트, 3-메틸-4-메톡시펜틸아세테이트, 4-메틸-4-메톡시펜틸아세테이트, 아세톤, 메틸에틸케톤, 디에틸케톤, 메틸시소부틸케톤, 에틸이소부틸케톤, 테트라히드로푸란, 시클로헥산온, 프로피온산메틸, 프로피온산에틸, 프로피온산프로필, 프로피온산이소프로필, 2-히드록시프로피온산메틸, 2-히드록시프로피온산에틸, 2-히드록시-2-메틸, 메틸-3-메톡시프로피오네이트, 에틸-3-메톡시프로피오네이트, 에틸-3-에톡시프로피오네이트, 에틸-3-프로폭시프로피오네이트, 프로필-3-메톡시프로피오네이트, 이소프로필-3-메톡시프로피오네이트, 에톡시초산에틸, 옥시초산에틸, 2-히드록시-3-메틸부탄산메틸, 초산메틸, 초산에틸, 초산프로필, 초산이소프로필, 초산부틸, 초산이소아밀, 탄산메틸, 탄산에틸, 탄산프로필, 탄산부틸, 피르빈산메틸, 피르빈산에틸, 피르빈산프로필, 피르빈산부틸, 아세트초산메틸, 아세트초산에틸, 벤질메틸에테르, 벤딜에틸에테르, 디헥실에테르, 초산벤질, 안식향산에틸, 옥살산디에틸, 말레인산디에틸, γ-부틸로락톤, 벤젠, 톨루엔, 키실렌, 시클로헥산온, 메탄올, 에탄올, 프로핀올, 부탄올, 헥산올, 시클로헥산올, 에틸렌글리콜, 디에틸렌글리콜, 글리세린, 등을 열거할 수 있다.Examples of the solvent for dissolving the photosensitive resin composition of the present invention include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, and ethylene. Glycol dipropyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, propylene glycol dimethyl ether, propylene glycol diethyl ether, diethylene glycol monomethyl ether, diethylene glycol Monoethyl ether, diethylene glycol monophenyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monopropyl ether acetate , Ethylene glycol monobutyl ether acetate, ethylene glycol monophenyl ether acetate, diethylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate, diethylene glycol monopropyl ether acetate, diethylene glycol monobutyl ether acetate, diethylene Glycol monophenyl ether acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, 2-methoxybutyl acetate, 3-methoxybutyl acetate, 4-methoxybutyl acetate, 2- Methyl-3-methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, 3-ethyl-3-methoxybutyl acetate, 2-ethoxybutyl acetate, 4-ethoxybutyl acetate, 4-propoxybutyl Acetate, 2-methoxypentyl acetate, 3-methoxypentyl acetate, 4-methoxypentyl acetate, 2-methyl-3-methoxypentyl acetate, 3-methyl-3-methoxypentyl acetate, 3-methyl-4-methoxypentyl acetate, 4-methyl-4-methoxypentyl acetate , Acetone, methyl ethyl ketone, diethyl ketone, methyl isobutyl ketone, ethyl isobutyl ketone, tetrahydrofuran, cyclohexanone, methyl propionate, ethyl propionate, propyl propionate, isopropyl propionate, methyl 2-hydroxypropionate, 2 Ethyl hydroxypropionate, 2-hydroxy-2-methyl, methyl-3-methoxypropionate, ethyl-3-methoxypropionate, ethyl-3-ethoxypropionate, ethyl-3-propionate Foxy propionate, propyl-3-methoxypropionate, isopropyl-3-methoxypropionate, ethyl ethoxy acetate, ethyl oxyacetate, 2-hydroxy-3-methylbutyrate, methyl acetate, Ethyl acetate, propyl acetate, isopropyl acetate, butyl acetate, isoamyl acetate , Methyl carbonate, ethyl carbonate, propyl carbonate, butyl carbonate, methyl pyrivate, ethyl pyrrate, propyl pyrivate, butyl pyrvinate, methyl acetate, ethyl acetate, benzyl methyl ether, benzyl ethyl ether, dihexyl ether, acetic acid Benzyl, ethyl benzoate, diethyl oxalate, diethyl maleate, γ-butyrolactone, benzene, toluene, xylene, cyclohexanone, methanol, ethanol, propinol, butanol, hexanol, cyclohexanol, ethylene glycol, di Ethylene glycol, glycerin, and the like.

또한, 감광성 수지조성물의 내열성, 기판과의 밀착성을 향상시키기 위해서, 분자내에 2개 이상의 에폭시기를 보유한 화합물을 함유하고 있어도 좋다. 이와 같은 에폭시기 함유화합물로는, 예컨대, 에피코트1001, 동1002, 동1003, 동1004, 동1007, 동1009, 동1010, 동828(상품명; 유화쉘에폭시 (주) 제) 등의 비스페놀A형 에폭시수지, 에피코트 807(상품명; 유화쉘에폭시 (주) 제) 등의 비스페놀F형 에폭시수지, 에피코트 152, 동154(상품명; 유화쉘에폭시 (주) 제), EPPN 201, 동202(상품명: 일본화약 (주) 제)등의 페놀노볼락형 에폭시수지, EOCN 102, 동103S, 동104S, 1020, 1025, 1027(상품명; 일본화약 (주) 제), 에피코트 180S75(상품명; 유화쉘에폭시 (주) 제)등의 크레졸노볼락형 에폭시수지, CY-175, 동177, 동179, 알다라이트 CY-182, 동192, 184(상품명; 치바-가이기 (주) 제), ERL-4234, 4299, 4221, 4206(상품명; U. C. C사제), 쇼다인 509(상품명; 소화전공 (주) 제), 에피크론 200, 동400(상품명; 대일본잉크 (주) 제), 에피코트 871, 동872(상품명; 유화쉘에폭시 (주) 제), ED-5661, 동5662(상품명; 세라니즈코팅 (주) 제) 등의 환형지방족 에폭시수지, 에포라이트 100MF(공영사유지화학공업 (주) 제), 에피올 TMP(일본유지 (주) 제) 등의 지방족 폴리글리시딜에테르 등이 열거된다.Moreover, in order to improve the heat resistance of the photosensitive resin composition and adhesiveness with a board | substrate, you may contain the compound which has two or more epoxy groups in a molecule | numerator. As such an epoxy group containing compound, Bisphenol-A type, such as Epicoat 1001, copper 1002, copper 1003, copper 1004, copper 1007, copper 1009, copper 1010, copper 828 (brand name; Emulsion Shell Epoxy Co., Ltd.) Bisphenol F type epoxy resins, such as epoxy resin and epicoat 807 (brand name; Emulsion Shell Epoxy Co., Ltd.), epicoat 152, copper 154 (brand name; Emulsion Shell Epoxy Co., Ltd.), EPPN 201, copper 202 (brand name) : Phenolic novolac-type epoxy resins, such as Nippon Kayaku Co., Ltd., EOCN 102, copper 103S, copper 104S, 1020, 1025, 1027 (brand name; Nippon Kayaku Co., Ltd.), Epicoat 180S75 (brand name; emulsion shell) Cresol novolak-type epoxy resins, such as epoxy (Co., Ltd. product), CY-175, copper 177, copper 179, Aldalite CY-182, copper 192, 184 (brand name; Chiba-Geigi Co., Ltd. product), ERL- 4234, 4299, 4221, 4206 (brand name; product made in UC C), Shodine 509 (brand name; product made by fire extinguishing company), epicron 200, copper 400 (brand name; product made in Japan Nippon Inks Corporation), epicoat 871 , 872 (trade name; oil painting Shell Epoxy Co., Ltd.) Cyclic aliphatic epoxy resins such as ED-5661 and B5662 (trade name; manufactured by Ceranis Coating Co., Ltd.); And aliphatic polyglycidyl ethers such as

이들 중에서도, 비스페놀A형 에폭시수지, 비스페놀F형 에폭시수지, 페놀노볼락형 에폭시수지, 크레졸노볼락형 에폭시수지, 지방족 폴리글리시딜에테르 등이 바람직하게 사용된다.Among these, bisphenol A type epoxy resins, bisphenol F type epoxy resins, phenol novolac type epoxy resins, cresol novolac type epoxy resins, aliphatic polyglycidyl ethers, and the like are preferably used.

상기와 같은 에폭시기 함유화합물의 분자량은 특별히 한정되는 것이 아니고, 고분자량으로 있어도 좋고, 또는 비스페놀A(또는 F)의 글리시딜에테르 등과 같은 저분자량으로 있어도 좋다.The molecular weight of the epoxy group-containing compound as described above is not particularly limited, and may be high molecular weight, or may be low molecular weight such as glycidyl ether of bisphenol A (or F).

임의성분으로서의 에폭시기 함유화합물은, 아크릴계 수지(A) 100질량부에 대하여, 5∼50질량부의 양에서 필요에 따라 사용된다.The epoxy group containing compound as an arbitrary component is used as needed in the quantity of 5-50 mass parts with respect to 100 mass parts of acrylic resin (A).

또한, 본 발명의 감광성 수지조성물에 있어서는, 필요에 따라 대전방지제, 보존안정제, 할레이션(halation)방지제, 소포제, 안료 등을 첨가할 수도 있다.Moreover, in the photosensitive resin composition of this invention, an antistatic agent, a storage stabilizer, a halation inhibitor, an antifoamer, a pigment, etc. can also be added as needed.

본 발명의감광성 수지조성물을 사용함으로써, 예컨대 다음과 같이 하여 패턴을 형성할 수 있다. 우선 각 성분을, 예컨대 그 고형분의 농도가 5∼60질량%로 되도록 용매에 용해하고, 이것을 구경 0.2∼10㎛정도의 필터에 여과킴으로써, 본 발명의 감광성 수지조성물 용액을 조제한다. 그리고, 본 발명의 감광성 수지조성물 용액을 실리콘웨이퍼 등의 기판의 표면에 도포하고, 프리베이크(pre-bake)를 실시함으로써 용제를 제거하여 감광성 수지조성물의 도막을 형성한다. 이어서, 형성된 도막에 대하여 광조사처리 등의 방사선조사처리(제1노광)를 실시한 후, 현상처리를 실시하여 방사선조사부분을 제거함으로써 포지티브 패턴이 형성된다.By using the photosensitive resin composition of this invention, a pattern can be formed as follows, for example. First, the photosensitive resin composition solution of this invention is prepared by melt | dissolving each component in a solvent so that the density | concentration of the solid content may be 5-60 mass% and filtering this in a filter about 0.2-10 micrometers in diameter. And the photosensitive resin composition solution of this invention is apply | coated to the surface of board | substrates, such as a silicon wafer, and pre-bake is performed to remove a solvent and form the coating film of the photosensitive resin composition. Subsequently, a radiation pattern (first exposure) such as a light irradiation treatment is applied to the formed coating film, and then a development pattern is performed to remove the radiation portion, thereby forming a positive pattern.

또한, 현상에 의해 얻어진 패턴의 내용제성, 막강도, 내열성 등의 제특성을 향상시키기 위해, 다시 노광(제2노광)하여도 좋고, 더욱 노광의 효과를 높이기 위해, 노광전, 노광중, 또는 노광후의 어느 하나에서, 패턴을 가열하여도 좋다. 이 가열처리는, 바람직하게는 노광후에 실시하는 것이 바람직하고, 또한 제2노광의 광량이 제1노광의 2∼15배인 것이 바람직하다.In addition, in order to improve various properties such as solvent resistance, film strength, heat resistance, etc. of the pattern obtained by development, exposure may be performed again (second exposure), and in order to further increase the effect of exposure, before exposure, during exposure, or exposure. In any of the following, the pattern may be heated. It is preferable to perform this heat processing after exposure preferably, and it is preferable that the light amount of a 2nd exposure is 2-15 times of a 1st exposure.

본 발명의 방법에서는, 제2노광량은, 제1노광의 노광량을 20∼150mJ/㎠으로 하여 그 2∼15배로 하는 것이 바람직하다. 또한, 가열처리는 100∼220℃, 3∼60분이 바람직하다.In the method of this invention, it is preferable to make 2nd exposure amount into 2-15 times the exposure amount of a 1st exposure as 20-150mJ / cm <2>. Moreover, as for heat processing, 100-220 degreeC and 3 to 60 minutes are preferable.

본 발명의 감광성 수지조성물 용액을 기판에 도포하는 방법으로는 회전도포법, 흐름도포법, 롤도포법 등의 각종의 방법을 채용할 수 있다. 프리베이크(pre-bake)의 조건은, 예컨대 가열온도가 50∼150℃, 가열시간이 30초간∼600초간이다. 방사선조사처리에 사용되는 방사선으로는 초고압수은등 등으로부터의 자외선에서,파장 365nm의 i선, 파장 405nm의 h선, 436nm의 g선, 파장 248nm의 KrF 엑시머레이저, 파장 193nm의 ArF 엑시머레이저 등의 원자외선, 신크로트론 방사선 등의 X선 혹은 전자선 등의 하전입자선이 열거된다.As a method of apply | coating the photosensitive resin composition solution of this invention to a board | substrate, various methods, such as a rotary coating method, a flowchart coating method, and a roll coating method, can be employ | adopted. Pre-bake conditions are a heating temperature of 50-150 degreeC and a heating time for 30 second-600 second, for example. The radiation used in the irradiation treatment includes ultraviolet rays from ultra-high pressure mercury lamps, i-rays of wavelength 365 nm, h-rays of wavelength 405 nm, g-rays of 436 nm, KrF excimer laser of wavelength 248 nm, and ArF excimer laser of wavelength 193 nm. Charged particle beams, such as X-rays or an electron beam, such as an ultraviolet-ray and a syncrotron radiation, are mentioned.

현상처리에 사용되는 현상액으로는, 바람직하게는, 예컨대 수산화나트륨, 탄산나트륨, 규산나트륨, 메타규산나트륨, 암모니아수, 에틸아민, n-프로필아민, 디에틸아민, 디-n-프로필아민, 트리에틸아민, 메틸디에틸아민, 디메틸에탄올아민, 트리에탄올아민, 테트라메틸암모늄히드록시드, 테트라에틸암모늄히드록시드, 콜린, 피롤, 피페리딘, 1,8-디아자비시클로[5.4.0]-7-운데센, 1,5-디아자비시클로[4.3.0] -5-노난 등이 용해되어 이루어지는 알칼리 수용액이 열거된다. 또한, 이 알칼리 수용액 등에 수용성 유기용매, 예컨대 메탄올, 에탄올 등의 알콜류나, 계면활성제가 적량 첨가되어진 것을 사용할 수도 있다. 현상처리시간은, 예컨대 10∼300초간이고, 현상방법으로는 액담음법, 침지법, 요동침지법 등을 이용할 수 있다.As the developing solution used for the developing treatment, for example, sodium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, aqueous ammonia, ethylamine, n-propylamine, diethylamine, di-n-propylamine, triethylamine , Methyldiethylamine, dimethylethanolamine, triethanolamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide, choline, pyrrole, piperidine, 1,8-diazabicyclo [5.4.0] -7- The aqueous alkali solution which dissolves undecene, 1, 5- diazabicyclo [4.3.0] -5-nonane, etc. is mentioned. In addition, a water-soluble organic solvent such as methanol, ethanol, or the like to which an appropriate amount of a surfactant is added may be used. The developing treatment time is, for example, 10 to 300 seconds, and the developing method may be a liquid dipping method, a dipping method, a rocking dipping method, or the like.

알칼리현상 후, 유수세정에 의한 린스처리를 실시하지만, 린스처리는 초고압 마이크로젯으로 수세하는 것이 바람직하다.After alkali development, the rinse treatment by running water washing is performed, but the rinse treatment is preferably washed with an ultra-high pressure microjet.

초고압 마이크로젯은 고압 분사장치로부터 물이 분사된다. 초고압 마이크로젯의 인가압력은, 보통 20∼350㎏f/㎠(2.9∼34.3MPa), 바람직하게는 30∼250㎏f/㎠ (4.9∼24.5 MPa)의 것을 지시한다. 이 인가압력은 노즐의 형상에 따라 선정되며, 본 발명에서는 고양이눈모양 노즐(단면이 오목렌즈 형상)이 바람직하다.The ultra high pressure microjet is sprayed with water from a high pressure jet. The application pressure of the ultrahigh pressure microjet is usually 20 to 350 kgf / cm 2 (2.9 to 34.3 MPa), preferably 30 to 250 kgf / cm 2 (4.9 to 24.5 MPa). This applied pressure is selected according to the shape of the nozzle, and in the present invention, a cat-eye nozzle (cross section is preferably a concave lens shape) is preferable.

초고압 마이크로젯의 분사각은 수세작용에 큰 영향을 미친다. 감광성수지 조성물의 면에 대하여 수직인 경우가 가장 수세작용이 강하다. 한편, 비감광부의 조성물의 제거는 단지 수세작용에만 강해서는 불충분하고, 기계적인 물의 충격에 의해서 불필요한 조성물을 기판에서 제거하지 않으면 안되지만, 그러기 위해서는 분사 방향은 기판에 대하여 수직방향이 가장 양호하지만, 또한 그 수직방향과 기판으로의 분사방향과 이루는 각도가 ±0∼20도 정도로하여 기판의 진행방향에 대하여 앞 또는 뒤로 분사하여도 좋다.The spray angle of the ultra-high pressure microjet has a great influence on the flushing action. The vertical washing with respect to the surface of the photosensitive resin composition is the strongest washing action. On the other hand, the removal of the composition of the non-photosensitive portion is insufficient to be strong only in the washing action, and the unnecessary composition must be removed from the substrate by the impact of mechanical water. The angle between the vertical direction and the spraying direction to the substrate may be about 0 to 20 degrees so that the spraying may be sprayed forward or backward with respect to the traveling direction of the substrate.

또한, 본 발명의 경제적인 실시예로서 연속수세를 채용하는 것이 실제적이지만, 이 경우에 감광성 수지조성물 층의 폭방향으로 물이 균등하게 보급되도록, 부채형의 퍼짐을 유지하여 분사하는 분사노즐을 단독 또는 부채의 퍼지는 방향으로 복수배열하고, 이 부채면 형상의 분사방향에 대하여 직각방향으로 감광성 수지조성물을 정속이동하면서 물의 분사부분을 통과하는 방법으로서 연속 수세처리를 실시하는 것이 바람직하다.In addition, although it is practical to employ continuous water washing as an economical embodiment of the present invention, in this case, a spray nozzle that maintains fan-shaped spreading and sprays so that water is spread evenly in the width direction of the photosensitive resin composition layer alone Alternatively, it is preferable to perform a continuous flushing treatment as a method of plural arrangements in the direction in which the fan is spread, and passing through the injection portion of water while moving the photosensitive resin composition at a constant speed in a direction perpendicular to the jet direction of the fan surface.

이 방법으로는, 비노광부층의 심부에서도 효과적으로 제거되기 때문에, 층두께가 두껍운 일반으로는 제거하기 어려운 조성물에도 사용할 수도 있고, 프로파일이 양호한 패턴을 형성시킬 수 있다.By this method, since it can remove effectively also in the deep part of a non-exposed part layer, it can also be used also for the composition which is difficult to remove by the thick general thickness, and can form a favorable pattern.

상기 분사압, 충격각도, 수류의 퍼지는 형상 등을 만족시키기 위한 기능을 보유하고, 특히 바람직하게 사용할 수 있는 고압분사장치는 초고압젯 정밀세정시스템 AF시리즈(아사히 사낙 주식회사 제품)가 열거된다. 이중에서도, 상대적으로 고압 분사용으로는 AF5400S가, 상대적으로 저압 분사용으로는 AF2800II가 적합하다. 그러나, 상기 분사인가압, 충격각도 및 수류의 퍼지는 형상 등을 보유하는 장치이면, 이러한 종류에 한정되지 않으며, 본 발명의 패턴형성방법에서 현상 후의 수세수단으로 적용할 수 있다.The high-pressure jetting device having a function for satisfying the injection pressure, impact angle, water flow spreading shape, and the like, which can be particularly preferably used, includes the ultra-high pressure jet precision cleaning system AF series (manufactured by Asahi Sanak Co., Ltd.). Of these, the AF5400S is suitable for relatively high pressure injection, and the AF2800II is suitable for relatively low pressure injection. However, as long as it is a device having the above-mentioned injection application pressure, impact angle, water flow spreading shape, and the like, it is not limited to this kind, and can be applied as a washing means after development in the pattern formation method of the present invention.

이 방법에서는, 초고압 마이크로젯의 효과가 강력하며, 또 심부까지 미치기때문에 물에 의한 수세로 비패턴부가 실질적으로 제거된다.In this method, since the effect of the ultra-high pressure microjet is strong and extends to the deep part, the non-pattern part is substantially removed by water washing with water.

패턴화되어 있는 수지조성물을 상기 수세처리한 후, 예컨대 압축공기나 압축질소로 건조하고, 상기 제2노광, 가열처리를 실시하여 경화된 패턴형 박막이 기판상에 형성된다.After the patterned resin composition is washed with water, the patterned thin film is dried on, for example, compressed air or compressed nitrogen, and subjected to the second exposure and heat treatment to form a cured patterned thin film on the substrate.

이렇게 하여 얻어지는 패턴형 박막은, 고해상도, 평탄성, 고해상성, 현상성, 내열성, 내약품성, 기판과의 밀착성, 투명성, 절연성 등의 물성에 우수하다. 또한, 감광성 수지조성물에 있어서, 불소화합물을 더 함유하는 것은, 상기 특성에 부가하여 그 비유전율은 3이하, 바람직하게 2.8 이하로 낮다. 따라서, 본 발명의 감광성 수지조성물은 전자부품의 보호막, 평탄화막, 층간절연막 등에 유용하고, 특히 액정표시소자, 집적회로소자 및 고체촬상소자의 층간 절연막, 고체촬상소자 등의 마이크로렌즈에 유용하다.The patterned thin film obtained in this way is excellent in physical properties, such as high resolution, flatness, high resolution, developability, heat resistance, chemical-resistance, adhesiveness with a board | substrate, transparency, and insulation. Further, in the photosensitive resin composition, in addition to the above characteristics, the relative dielectric constant of the photosensitive resin composition is lower than 3, preferably lower than 2.8. Therefore, the photosensitive resin composition of the present invention is useful for protective films, planarization films, interlayer insulating films, and the like of electronic components, and especially for microlenses such as interlayer insulating films of liquid crystal display devices, integrated circuit devices, and solid state imaging devices, and solid state imaging devices.

<실시예><Example>

이하, 본 발명의 감광성 수지조성물을 실시예에 근거하여 설명하지만, 본 발명은 이들에 한정되는 것은 아니다.Hereinafter, although the photosensitive resin composition of this invention is demonstrated based on an Example, this invention is not limited to these.

실시예1Example 1

아크릴계 수지(A)로서 메타크릴산 중합유도체(질량 평균분자량 약 2000, 알릴기:메타크릴산 모노머단위에 대하여 40몰%) 60질량부, 2,3,4-트리히드록시벤조페논-1,2-나프토퀴논디아지드-5-술폰산에스테르(2S : 3개의 수산기 중 2개가 치환, 1개는 H) 15질량부, 헥사메톡시메틸올멜라민 22질량부, 상기 실란결합제 S3 0.05질량부, 프로필렌글리콜모노메틸에테르아세테이트 200질량부를 혼합하고 교반용해하여, 감광성 수지조성물을 제조하였다.As acrylic resin (A) 60 mass parts, methacrylic acid polymerization derivative (mass average molecular weight about 2000, allyl group: 40 mol% with respect to the methacrylic acid monomeric unit), 2,3,4- trihydroxy benzophenone-1, 15 parts by mass of 2-naphthoquinone diazide-5-sulfonic acid ester (2S: two of three hydroxyl groups are substituted, one is H), 22 parts by mass of hexamethoxymethylolmelamine, 0.05 parts by mass of the silane binder S3, 200 parts by mass of propylene glycol monomethyl ether acetate was mixed and dissolved in stirring to prepare a photosensitive resin composition.

이것을, 유리기판(코닝 7059)상에 막두께가 5㎛가 되도록 도포한 후, 온풍 히터 중에서 100℃, 2분간 건조시켜, 2∼8㎛의 L/S패턴(라인 및 스페이스가, 2㎛, 3㎛, 4㎛, 6㎛, 8㎛의 패턴을 보유한다.)의 마스크를 통하여, 초고압 수은등을 사용하여 100mJ/㎠의 노광량으로 노광을 실시하고, 1.5질량%의 테트라메틸암모늄히드록시드 알칼리 용액에서 25℃에서 20초간 현상하고, 수세, 건조하여 미세패턴을 얻었다. 그런 후, 기판 전체를 400mJ/㎠의 노광량으로 제2노광하고, 120℃에서 10분간 가열처리하여 경화시켰다.This was applied onto a glass substrate (Corning 7059) so as to have a film thickness of 5 μm, and then dried in a warm air heater for 2 minutes at 100 ° C. to form an L / S pattern of 2 to 8 μm (line and space of 2 μm, Through a mask of 3 μm, 4 μm, 6 μm, and 8 μm), using an ultra-high pressure mercury lamp and exposing at an exposure dose of 100 mJ / cm 2, and 1.5% by mass of tetramethylammonium hydroxide alkali. The solution was developed at 25 ° C. for 20 seconds, washed with water and dried to obtain a fine pattern. Then, the whole board | substrate was exposed by 2nd exposure with the exposure amount of 400mJ / cm <2>, and it heat-processed at 120 degreeC for 10 minutes, and hardened | cured.

얻어진 패턴형 가열경화막의 특성을 다음방법으로 평가하였다.The characteristics of the obtained pattern type heat curing film were evaluated by the following method.

(1) 비유전율의 측정: 상기 얻어진 가열경화막의 비유전율을 실온, 1MHz의 조건에서 유전율 측정장치(휴렛 팩커드사 제품)를 사용하여 측정하였다.(1) Measurement of dielectric constant: The dielectric constant of the obtained heat-cured film was measured using a dielectric constant measuring apparatus (manufactured by Hewlett-Packard Co., Ltd.) at room temperature and 1 MHz.

비유전율은 3.2이었다.The relative dielectric constant was 3.2.

(2) 밀착성의 평가(2) Evaluation of adhesiveness

현상시의 밀착성도 좋고, 2㎛, 3㎛, 4㎛, 6㎛, 8㎛의 어느 미세선의 박리도 없다.The adhesiveness at the time of image development is also good, and there is no peeling of any fine wire of 2 micrometers, 3 micrometers, 4 micrometers, 6 micrometers, and 8 micrometers.

(3) 내열성의 평가(3) evaluation of heat resistance

상기 가열경화막의 막두께를 측정한 후, 240℃의 오븐내에서 30분간 더 가열하였다. 그리고, 가열처리 후의 막두께를 측정하고, 가열경화막의 잔막율을 구하였다. 가열에 의한 잔막율의 변화는 거의 없었다.After measuring the film thickness of the said heat-cured film, it heated further in 30 degreeC oven. And the film thickness after heat processing was measured, and the residual film rate of the heat hardening film was calculated | required. There was almost no change of the residual film rate by heating.

(4) 내용제성의 평가(4) Evaluation of solvent resistance

상기 가열경화막을 온도 80℃의 디메틸술폭시드와 모노에탄올아민의 혼합액(체적비 3:7)에 12분간 침지시킨 후, 수세건조하여 막두께를 측정하였다. 침적에 의한 막두께 변화는 거의 없었다.The heat-cured film was immersed in a mixed solution (volume ratio 3: 7) of dimethyl sulfoxide and monoethanolamine at a temperature of 80 ° C. for 12 minutes, and then washed with water and dried to measure the film thickness. There was almost no change in film thickness due to deposition.

(5) 평탄도의 평가(5) Evaluation of flatness

상기 가열경화막을, 접촉식의 막두께 측정기를 사용하여 표면조도를 측정하였다. Ra값으로 15Å으로 평탄성은 양호하였다.The surface roughness of the heat-cured film was measured using a contact type film thickness gauge. The flatness was good at an Ra value of 15 Hz.

(6) 투명도의 측정(6) measurement of transparency

상기 가열경화막을 더블빔형 분광광도계를 사용하여, 파장 380-800nm에서 측정하고, 투과율을 구하였다. 막은 투명하고 장파장의 흡수는 거의 없으며, 단파장에서도 400nm의 투과율도 96%이었다.The heat-curable film was measured at a wavelength of 380-800 nm using a double beam type spectrophotometer to obtain transmittance. The film was transparent and had almost no absorption at long wavelengths. The transmittance at 400 nm was 96% even at short wavelengths.

(7) 내열변색의 평가(7) Evaluation of heat discoloration

상기 가열경화막을 240℃의 오븐내에서 30분간 더 가열한 후, 상기와 동일한 방법으로, 투과율을 측정하였다. 400nm의 투과율의 변화는 1%이고, 거의 변화가 관찰되지 않았다.After further heating the said heat-cured film for 30 minutes in 240 degreeC oven, the transmittance | permeability was measured by the same method as the above. The change in transmittance at 400 nm was 1% and almost no change was observed.

실시예2Example 2

아크릴계 수지(A)로서 메타크릴산-벤질아크릴레이트 공중합 유도체(질량 평균분자량 약 20000, 메타크릴산 : 벤질아크릴레이트 = 8 : 2 (몰비), 알릴기:메타크릴산모노머-단위에 대하여 40몰%) 60질량부, 2,3,4,4'-테트라히드록시벤조페논-1,2-나프토퀴논디아지드-5-술폰산에스테르(3S: 4개의 수산기중 3개가 치환, 1개는 H)15질량부, 헥사메톡시메틸올멜라민 22질량부, 상기 실란결합제 S3 0.05질량부, 프로필렌글리콜모노메틸에테르아세테이트 200질량부를 혼합하고 교반용해하여, 감광성 수지조성물을 제조하였다.As acrylic resin (A) methacrylic acid-benzyl acrylate copolymer derivative (mass average molecular weight about 20000, methacrylic acid: benzyl acrylate = 8: 2 (molar ratio), 40 mol per allyl group: methacrylic acid monomer-unit) %) 60 parts by mass, 2,3,4,4'-tetrahydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonic acid ester (3S: 3 of 4 hydroxyl groups are substituted, 1 is H 15 mass parts, 22 mass parts of hexamethoxymethylol melamine, 0.05 mass part of said silane binders S3, and 200 mass parts of propylene glycol monomethyl ether acetates were mixed, stirred and dissolved, and the photosensitive resin composition was produced.

실시예3Example 3

실시예1에 있어서, 2,3,4-트리히드록시벤조페논-1,2-나프토퀴논디아지드-5-술폰산에스테르 대신에, 2,3,4,4'-테트라히드록시벤조페논-1,2-나프토퀴논디아지드 -5-술폰산에스테르를 사용한 것 이외에는, 실시예1과 동일하게 하여 감광성 수지조성물을 제조하였다.2,3,4,4'-tetrahydroxybenzophenone- instead of 2,3,4-trihydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonic acid ester in Example 1 A photosensitive resin composition was produced in the same manner as in Example 1 except that 1,2-naphthoquinonediazide-5-sulfonic acid ester was used.

실시예4Example 4

실시예1에 있어서, 2,3,4-트리히드록시벤조페논-1,2-나프토퀴논디아지드-5-술폰산에스테르 대신에, 트리(p-히드록시페닐)메탄-1,2-나프토퀴논디아지드-5-술폰산에스테르(2S : 3개의 수산기 중 2개가 치환, 1개는 H)를 사용한 것 이외에는, 실시예1과 동일하게 하여 감광성 수지조성물을 제조하였다.In Example 1, tri (p-hydroxyphenyl) methane-1,2-nap instead of 2,3,4-trihydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonic acid ester A photosensitive resin composition was prepared in the same manner as in Example 1 except that toquinonediazide-5-sulfonic acid ester (2S: two of three hydroxyl groups were substituted and one was H).

실시예5Example 5

실시예1에 있어서, 2,3,4-트리히드록시벤조페논-1,2-나프토퀴논디아지드-5-술폰산에스테르 대신에, 4,4'-[1-[4-[1-[4-히드록시페닐]-1-메틸에틸]페닐]에틸리덴]비스페놀-1,2-나프토퀴논디아지드-5-술폰산에스테르(2S : 3개의 수산기 중 2개가 치환, 1개는 H)를 사용한 것 이외에는, 실시예1과 동일하게 하여 감광성 수지조성물을 제조하였다.4,4 '-[1- [4- [1- [instead of 2,3,4-trihydroxybenzophenone-1,2-naphthoquinone diazide-5-sulfonic acid ester in Example 1; 4-hydroxyphenyl] -1-methylethyl] phenyl] ethylidene] bisphenol-1,2-naphthoquinonediazide-5-sulfonic acid ester (2S: 2 of 3 hydroxyl groups are substituted, 1 is H) A photosensitive resin composition was prepared in the same manner as in Example 1 except for using.

상기 실시예2∼5의 감광성 수지조성물을 실시예1과 동일하게 처리하여 얻은 패턴형 가열경화막의 특성을 상기 방법으로 평가하였더니, 비유전율, 밀착성, 내열성, 내용제성, 평탄도, 투명도, 내열변색에 대해서는, 어느것도 실시예1과 거의 동일하였다. 단, 실시예5의 투명도는 93%였다.When the photosensitive resin compositions of Examples 2 to 5 were treated in the same manner as in Example 1, the characteristics of the patterned heat cured film were evaluated by the above method, and the relative dielectric constant, adhesiveness, heat resistance, solvent resistance, flatness, transparency, and heat resistance were evaluated. As for color change, all of them were almost the same as in Example 1. However, the transparency of Example 5 was 93%.

실시예6Example 6

실시예1에 있어서, 불소계 계면활성제 메가파크 F177 0.01질량부를 사용한 것 이외는, 실시예1과 동일하게 하여, 감광성 수지조성물을 조제하였다.In Example 1, the photosensitive resin composition was prepared like Example 1 except having used 0.01 mass part of fluorine-type surfactant mega parks F177.

실시예7Example 7

실시예6에 있어서, 메타크릴산 중합유도체 60질량부 대신에, 그 중합유도체 50질량부, 아크릴계 수지(a)인 폴리히드록시에틸메타크릴레이트(질량평균분자량 15000)을 10질량부 사용한 것 이외는, 실시예6과 동일하게 하여, 감광성 수지조성물을 조제하였다.In Example 6, 10 mass parts of polyhydroxyethyl methacrylate (mass average molecular weight 15000) which is 50 mass parts of this polymerization derivatives, and acrylic resin (a) was used instead of 60 mass parts of methacrylic acid polymerization derivatives. In the same manner as in Example 6, a photosensitive resin composition was prepared.

실시예8Example 8

실시예6에 있어서, 헥사메톡시메틸올멜라민을 18질량부로 하고, 에폭시 화합물의 2-에톡시헥실글리시딜에테르를 4질량부 사용한 것 이외는, 실시예6과 동일하게 하여, 감광성 수지조성물 조제하였다.A photosensitive resin composition in the same manner as in Example 6 except that 18 parts by mass of hexamethoxymethylol melamine was used and 4 parts by mass of 2-ethoxyhexyl glycidyl ether of the epoxy compound was used. It prepared.

상기 실시예6~8의 감광성 수지조성물을 실시예1과 동일하게 처리하여 얻어진 패턴형 가열경화막의 특성을 상기 방법으로 평가하였더니, 평탄도는 모두 Ra값으로 5Å이였다. 또한, 비유전율, 밀착성, 내열성, 내용제성, 투명도, 내열변색에 대해서는, 어느 것도 실시예1과 거의 동일하였다.When the photosensitive resin compositions of Examples 6 to 8 were treated in the same manner as in Example 1, the characteristics of the patterned heat-curable film were evaluated by the above method, and the flatness was 5 GPa in all Ra values. In addition, about dielectric constant, adhesiveness, heat resistance, solvent resistance, transparency, and heat discoloration, all were substantially the same as Example 1.

실시예9Example 9

실시예1~8의 각각의 감광성 수지조성물에 있어서, 새로운 불소화합물 F1 10질량부를 첨가혼합하고 교반용해하여, 감광성 수지조성물을 각각 조제하였다.In each of the photosensitive resin compositions of Examples 1 to 8, 10 parts by mass of a new fluorine compound F1 was added and mixed, stirred and dissolved to prepare a photosensitive resin composition, respectively.

실시예1과 동일하게 처리하여 얻어진 패턴형 가열경화막의 특성을 상기 방법으로 평가하였더니, 비전유율은, 실시예1∼8에 비하여 각각 0.3 낮았다. 또한, 밀착성, 내열성, 내용제성, 평탄도, 투명도, 내열변색에 대해서는, 어느 것도 실시예1∼8과 거의 동일하였다.When the characteristics of the patterned heat-curable film obtained by the same treatment as in Example 1 were evaluated by the above method, the specific dielectric constant was 0.3 lower than those in Examples 1 to 8, respectively. In addition, about adhesiveness, heat resistance, solvent resistance, flatness, transparency, and heat discoloration, all were substantially the same as Examples 1-8.

실시예10Example 10

실시예4의 감광성 수지조성물에 있어서, 실란결합제 S3 대신에 실란결합제 S2를 사용한 것 이외는 실시예4와 동일하게 하여, 감광성 수지조성물을 조제하였다.In the photosensitive resin composition of Example 4, the photosensitive resin composition was prepared like Example 4 except having used the silane binder S2 instead of the silane binder S3.

실시예11Example 11

실시예4의 감광성 수지조성물에 있어서, 실란결합제 S3 대신에 실란결합제 S4를 사용한 것 이외는 실시예4와 동일하게 하여, 감광성 수지조성물을 조제하였다.In the photosensitive resin composition of Example 4, the photosensitive resin composition was prepared like Example 4 except having used the silane binder S4 instead of the silane binder S3.

실시예12Example 12

실시예4의 감광성 수지조성물에 있어서, 실란결합제 S3 대신에 실란결합제 S5를 사용한 것 이외는 실시예4와 동일하게 하여, 감광성 수지조성물을 조제하였다.In the photosensitive resin composition of Example 4, the photosensitive resin composition was prepared like Example 4 except having used the silane binder S5 instead of the silane binder S3.

상기 실시예10∼12의 감광성 수지조성물을 실시예1과 동일하게 처리하여 얻어진 패턴형 가열경화막의 특성을 상기 방법으로 평가하였더니, 비유전율, 밀착성, 내열성, 내용제성, 평탄도, 투명도, 내열변색에 대하여, 어느 것도 실시예4와 거의 동일하였다.When the photosensitive resin compositions of Examples 10 to 12 were treated in the same manner as in Example 1, the characteristics of the patterned heat cured film were evaluated by the above method, and the relative dielectric constant, adhesion, heat resistance, solvent resistance, flatness, transparency, and heat resistance were evaluated. As for color change, almost all of them were the same as in Example 4.

비교예1Comparative Example 1

실시예1의 감광성 수지조성물에 있어서, 실란결합제 S3를 제거한 것 이외에는 실시예1과 동일하게 하여, 감광성 수지조성물을 조제하고, 실시예1과 동일하게 처리하여 얻어진 패턴형 가열경화막의 특성을 상기 방법으로 평가하였더니, 비유전율, 내열성, 내용제성, 평탄도, 투명도, 내열변색에 대하여, 어느 것도 실시예1과 거의 동일하였지만, 밀착성에 있어서 2㎛, 3㎛의 미세선으로 박리가 관찰되었다.In the photosensitive resin composition of Example 1, except that the silane binder S3 was removed, the photosensitive resin composition was prepared in the same manner as in Example 1, and the characteristics of the patterned heat cured film obtained by treating in the same manner as in Example 1 were used in the above method. As a result, the dielectric constant, heat resistance, solvent resistance, flatness, transparency, and heat discoloration were almost the same as in Example 1, but peeling was observed in the fine lines of 2 탆 and 3 탆 in adhesion.

본 발명의 감광성 수지조성물은, 알칼리성 수용액에서 현상할 수 있고, 고해상도, 고감도이고, 또한, 평탄성, 내열성, 내용제성, 투명성 등의 제특성과 아울러, 종래 이들 특성과 동시에 실현하는 것이 곤란하였던 저유전특성의 우수한 패턴형 박막을 바람직하게는 본 발명의 패턴형성방법에 의해 용이하게 형성할 수 있다.The photosensitive resin composition of the present invention can be developed in an alkaline aqueous solution, has a high resolution, high sensitivity, and has a variety of properties such as flatness, heat resistance, solvent resistance, transparency, and the like, and it is difficult to realize simultaneously with these properties. Preferably, the patterned thin film having excellent characteristics can be easily formed by the pattern forming method of the present invention.

따라서, 본 발명의 감광성 수지조성물은, 반도체집적회로, 액정디스플레이용 도막, 트랜지스터회로 등의 회로제조용 마스크를 작성하기 위한 포지티브 레지스트로서, 또한 층간절연막, 컬러필터용 보호막, 마이크로렌즈 등의 영구막 형성재료로서도 바람직하게 사용할 수 있다.Therefore, the photosensitive resin composition of the present invention is a positive resist for producing a mask for manufacturing a circuit such as a semiconductor integrated circuit, a liquid crystal display coating film, a transistor circuit, and also forms a permanent film such as an interlayer insulating film, a protective film for a color filter, and a microlens. It can also use suitably as a material.

Claims (12)

(A)불포화 에틸렌기를 보유하는 알칼리가용성 아크릴계 수지, (B)1,2-나프토퀴논디아지드기 함유화합물, (C)가교제, 및 (D)실란결합제를 적어도 함유하는 것을 특징으로 하는 포지티브 감광성 수지조성물.(A) Positive photosensitive property containing alkali-soluble acrylic resin which has unsaturated ethylene group, (B) 1, 2- naphthoquinone diazide group containing compound, (C) crosslinking agent, and (D) silane binder. Resin composition. 제1항에 있어서, 아크릴계 수지(A)의 배합량은, 상기 조성물 중의 아크릴계 수지(A), 1,2-나프토퀴논디아지드기 함유화합물(B), 및 가교제(C)의 총계 100질량부에 대하여 35∼95질량부인 것을 특징으로 하는 포지티브 감광성 수지조성물.The compounding quantity of acrylic resin (A) is 100 mass parts of total amounts of acrylic resin (A), a 1, 2- naphthoquinone diazide group containing compound (B), and a crosslinking agent (C) in the said composition. It is 35-95 mass parts with respect to the positive photosensitive resin composition. 제1항에 있어서, 1,2-나프토퀴논디아지드기 함유화합물(B)의 배합량은, 상기 조성물 중의 아크릴계 수지(A) 100질량부에 대하여, 5∼100질량부인 것을 특징으로 하는 포지티브 감광성 수지조성물.The compounding quantity of 1,2-naphthoquinone diazide group containing compound (B) is 5-100 mass parts with respect to 100 mass parts of acrylic resin (A) in the said composition, The positive photosensitive property of Claim 1 characterized by the above-mentioned. Resin composition. 제1항에 있어서, 불소계 계면활성제를 더 함유하는 것을 특징으로 하는 포지티브 감광성수지화합물.The positive photosensitive resin compound according to claim 1, further comprising a fluorine-based surfactant. 제1항에 있어서, 상기 불포화 에틸렌기를 보유하는 알칼리가용성 아크릴계 수지(A)에, 불포화 에틸렌기를 보유하지 않은 알칼리가용성 아크릴계 수지(a)를 병용하는 것을 특징으로 하는 포지티브 감광성 수지조성물.The positive photosensitive resin composition according to claim 1, wherein an alkali-soluble acrylic resin (a) having no unsaturated ethylene group is used in combination with the alkali-soluble acrylic resin (A) having an unsaturated ethylene group. 가교제(C)는 하기식(Ⅰ)에 나타내는 멜라민계 화합물인 것을 특징으로 하는 포지티브 감광성 수지조성물.A crosslinking agent (C) is a melamine type compound represented by following formula (I), The positive photosensitive resin composition characterized by the above-mentioned. 식(Ⅰ)중, R5는 -N R51R52{R51, R52는 각각 수소 또는 -CH2OR53(R53은 수소 또는 탄소수 1∼6의 알킬기 또는 시클로알킬기를 나타낸다.)를 나타낸다.} 또는 페닐기를 나타내고, R1, R2, R3, R4는 각각 수소 또는 -CH2OR53(R53는 수소 또는 탄소수 1∼6의 알킬기 또는 시클로알킬기를 나타낸다.)를 나타낸다.Equation (Ⅰ) of, R 5 is -NR 51 R 52 {R 51, R 52 are each an H or -CH 2 OR 53 (R 53 represents an alkyl group or a cycloalkyl group having 1 to 6 carbon atoms or hydrogen.) .} Or a phenyl group, and R 1 , R 2 , R 3 , and R 4 each represent hydrogen or —CH 2 OR 53 (R 53 represents hydrogen or an alkyl group having 1 to 6 carbon atoms or a cycloalkyl group.). 제1항에 있어서, 가교제(C)는 에폭시계 화합물인 것을 특징으로 하는 포지티브 감광성 수지조성물.The positive photosensitive resin composition according to claim 1, wherein the crosslinking agent (C) is an epoxy compound. 제1항에 있어서, 가교제(C)의 배합량은 아크릴계 수지(A)에 대하여 2∼50질량부인 것을 특징으로 하는 포지티브 감광성 수지조성물.The positive photosensitive resin composition of Claim 1 whose compounding quantity of a crosslinking agent (C) is 2-50 mass parts with respect to acrylic resin (A). 제1항에 있어서, 실란결합제(D)의 배합량은 아크릴계 수지(A)에 대하여, 0.01∼5질량부인 것을 특징으로 하는 포지티브 감광성 수지조성물.The positive photosensitive resin composition of Claim 1 whose compounding quantity of a silane binder (D) is 0.01-5 mass parts with respect to acrylic resin (A). 제1항에 있어서, 불소화합물을 더 함유하는 것을 특징으로 하는 포지티브 감광성 수지조성물.The positive photosensitive resin composition according to claim 1, further comprising a fluorine compound. 제10항에 있어서, 불소화합물은 불소화 에폭시 화합물인 것을 특징으로 하는 포지티브 감광성 수지조성물.The positive photosensitive resin composition according to claim 10, wherein the fluorine compound is a fluorinated epoxy compound. 제1항 내지 제11항중 어느 한 항에 기재된 포지티브 감광성 수지조성물을 도포, 제1노광, 현상, 제2노광, 가열처리를 순차적으로 실시하는 공정에 있어서, 제2노광의 광량이 제1노광의 2∼15배인 것을 특징으로 하는 패턴형성방법.The process of applying the positive photosensitive resin composition as described in any one of Claims 1-11, and performing a 1st exposure, image development, 2nd exposure, and heat processing sequentially, WHEREIN: The quantity of light of a 2nd exposure of a 1st exposure Pattern formation method characterized by 2 to 15 times.
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KR100824356B1 (en) * 2002-01-09 2008-04-22 삼성전자주식회사 Photoresist Composition And Method of Manufacturing Pattern Using The Same
KR100942124B1 (en) 2002-01-24 2010-02-16 제이에스알 가부시끼가이샤 Radiation Sensitive Composition for Forming an Insulating Film, Insulating Film and Display Device
KR101209049B1 (en) * 2004-12-24 2012-12-07 스미또모 가가꾸 가부시끼가이샤 Photosensitive resin and thin film panel comprising pattern made of the photosensitive resin and method for manufacturing the thin film panel
JP2011186432A (en) * 2009-12-15 2011-09-22 Rohm & Haas Electronic Materials Llc Photoresist and method for using the same
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Publication number Priority date Publication date Assignee Title
KR100784602B1 (en) * 2000-12-05 2007-12-11 가부시끼가이샤 케이알아이 Active Components and Photosensitive Resin Compositions Containing the Same
KR100929723B1 (en) * 2006-11-14 2009-12-03 도쿄 오카 고교 가부시키가이샤 Coloring photosensitive resin composition

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