KR20010083763A - Anisotropic conductive adhesive film with excellent electric connection reliability - Google Patents

Anisotropic conductive adhesive film with excellent electric connection reliability Download PDF

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KR20010083763A
KR20010083763A KR1020000008287A KR20000008287A KR20010083763A KR 20010083763 A KR20010083763 A KR 20010083763A KR 1020000008287 A KR1020000008287 A KR 1020000008287A KR 20000008287 A KR20000008287 A KR 20000008287A KR 20010083763 A KR20010083763 A KR 20010083763A
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particles
film
anisotropic conductive
melting point
resin particles
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KR100622578B1 (en
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김광천
김순식
김진열
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한형수
주식회사 새 한
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/30Adhesives in the form of films or foils characterised by the adhesive composition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/2919Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00011Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/00013Fully indexed content
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/0665Epoxy resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/0781Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811Extrinsic, i.e. with electrical conductive fillers

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Conductive Materials (AREA)
  • Non-Insulated Conductors (AREA)

Abstract

PURPOSE: Provided is an anisotropic conductive film for use as connective materials in LCD packaging which does not give damage on short or circuit pattern even if IC of fine pitch or bump is connected. CONSTITUTION: The anisotropic conductive film is characterized that conductive particles and thermoplastic insulated resin particles are dispersed in an insulated adhesive based on resin components bearing epoxy group and resin components to aid formation of film. The conductive particles are inorganic or organic particles coated with metal, or metal particles having 1 to 10 micrometer of mean particle diameter, and are modified by pressure. The insulated resin particles are thermoplastic resin particles a high melting point of 150 to 200 deg.C with or thermoplastic resin particles with a low melting point of 80 to 150 deg.C, which are used independently or as a mixture thereof.

Description

전기적 접속신뢰성이 우수한 이방도전성 접착용 필름{Anisotropic conductive adhesive film with excellent electric connection reliability}Anisotropic conductive adhesive film with excellent electric connection reliability}

본 발명은 LCD 패키징에 접속재료로서 사용되는 이방도전성 접착용 필름에 관한 것이다. 액정디스플레이의 고해상도, 칼라화가 진행되면서 픽셀피치(Pixel pitch)의 감소(현재 50㎛까지 제품화, LCD판넬상에 ITO증착된 미세회로의 한 Pad에서 다음 Pad까지의 거리) 및 그 판넬위에 인쇄된 리드(Lead)수가 증가되고 있는 추세에 있다. 이러한 기술적 요구에 의해 LCD판넬과 드라이버IC 및 PCB를 접속하는 LCD 패키징기술도 이에 대응하여 발전해오고 있다. 즉, 회로가 미세화되면서 이에 따른 패키징기술도 여러가지 방법으로 발전되고 있다. 특히, LCD패키징 기술 중에서도 가장 많이 사용되고 있는 것으로 COF(Chip-On-Film)법에 의한 LCD판넬과 PCB의 전기적 접속을 이방성도전막을 이용하여 패킹하는 법이 있으며, 또한 차세대 LCD패키징법으로 Driver IC Bare Chip을 LCD판넬위에 직접 IC접속법으로 접속시키고 PCB와의 접속은 FPC를 이용하여 이방성도전필름(ACF)으로 접속시키는 패키징법이 이용되고 있다. 이상에서 설명한 LCD패키징에 접속재료로서 사용되는 이방도전성 접착용 필름(Anisotropic Conductive Film)은 열경화성 접착제중에 도전성미립자를 분산시켜 이형 처리한 PET필름상에 코팅하는 방법으로 접착필름 형태로 제조한 Z-축 도전성접착제 필름을 의미하며, x-y 평면방향으로는 절연성을 지닌다. 이러한 이방도전성 접착용 필름은 지난 10여년간 일본의 히다찌 화성(일본특허공개평 5-21094, 5-226020, 7-302666, 7-302667, 7-302668등) 및 소니케미칼(일본특허공개평 7-211374, 8-311420, 9-199206, 9-199207, 9-31419, 9-63355, 9-115335)등에 의해 많은 연구 및 상품화가 진행되어 왔다.The present invention relates to an anisotropic conductive adhesive film used as a connecting material in LCD packaging. As the resolution and colorization of the liquid crystal display progress, the pixel pitch decreases (commercialized up to 50µm, the distance from one pad to the next pad of the microcircuit ITO deposited on the LCD panel) and the lead printed on the panel. The number of leads is on the rise. Due to these technical requirements, LCD packaging technology connecting LCD panels with driver ICs and PCBs has been developed in response. In other words, as the circuit becomes more miniaturized, the packaging technology has been developed in various ways. In particular, the most widely used LCD packaging technology is the method of packing the electrical connection between the LCD panel and PCB by the COF (Chip-On-Film) method using an anisotropic conductive film.In addition, Driver IC Bare is the next-generation LCD packaging method. A packaging method is used in which a chip is directly connected to an LCD panel by an IC connection method and an PCB is connected to an anisotropic conductive film (ACF) using an FPC. The anisotropic conductive film used as a connection material in the LCD packaging described above is a Z-axis manufactured in the form of an adhesive film by coating conductive PET particles on a release-treated PET film by dispersing conductive fine particles in a thermosetting adhesive. It means a conductive adhesive film, and has insulation in the xy plane direction. Such anisotropic conductive adhesive films have been manufactured by Hitachi Kasei (Japanese Patent Laid-Open Publication No. 5-21094, 5-226020, 7-302666, 7-302667, 7-302668, etc.) and Sony Chemical (Japanese Patent Laid-Open Publication 7-) for the past decade. 211374, 8-311420, 9-199206, 9-199207, 9-31419, 9-63355, 9-115335).

그러나, 점점 파인피치화 및 IC범프면적의 미소화에 따라 이방도전성 접착제 중에 함유되는 도전입자의 입경을 작게할 필요가 있고, 또 도통신뢰성을 향상시키기 위해 도전입자의 배합량을 증가시키는 경향이 있다.However, as the fine pitch and the IC bump area become smaller, the particle size of the conductive particles contained in the anisotropic conductive adhesive needs to be reduced, and the amount of the conductive particles tends to increase in order to improve conduction reliability.

그러나, 도전입자의 입경을 작게 하면 2차 응집에 의해 접속의 불균일이나 패턴간의 쇼트가 문제되고, 배합량을 늘리면 역시 패턴간의 쇼트가 문제된다.However, if the particle diameter of the conductive particles is reduced, the secondary cohesion causes problems of connection unevenness and shorting between patterns, while increasing the compounding amount also causes shorting between patterns.

이의 대책으로서 도전입자의 표면을 절연층으로 피복한 절연코트입자를 사용하거나, 이방도전성 접착용 필름을 다층화하여 접속시에 전극으로부터의 도전입자의 유출을 방지하는 시도도 이루어지고 있다.As a countermeasure against this, attempts have been made to prevent the outflow of the conductive particles from the electrode at the time of connection by using the insulating coat particles in which the surface of the conductive particles is covered with an insulating layer or by multilayering the film for anisotropic conductive bonding.

그러나, 절연코트입자를 사용할 경우 그 경도 및 탄성에 의해 장기간의 도통신뢰성이 저하되는 것이 염려된다. 또 절연코트입자로서는 평균 입경이 5㎛ 정도의 것이 주로 사용되고 있지만, 이 입자의 배합량을 증가하면, 예를 들면 막당 40000개/㎟ 정도 배합하면, 범프간이 10㎛ 이하인 피치가 작은 파인 피치간 IC의 접속에서는 절연신뢰성을 유지하는 것이 곤란하게 된다.However, when the insulating coat particles are used, there is a concern that the long-term conduction reliability is deteriorated by their hardness and elasticity. Insulating coating particles are mainly used having an average particle diameter of about 5 μm. However, when the compounding amount of these particles is increased, for example, when the compounding amount is about 40000 pieces / mm 2, the pitch between pitches is less than 10 μm. In the connection, it becomes difficult to maintain insulation reliability.

한편, 다층화된 경우 도전입자의 배합량을 증가할 수 있어, 예를 들면 평균 입경이 3㎛ 정도의 입경이 작은 도전입자를 막당 80000개/㎟ 정도까지 배합할 수 있지만, 이 경우 고정밀도의 범프를 작성할 필요가 있는 외에, 접속할 때의 프레스 정밀도를 엄격하게 관리할 필요가 있는 등으로 인해 가격상승의 요인이 된다.On the other hand, in the case of multilayering, the compounding amount of the conductive particles can be increased. For example, conductive particles having a small particle diameter of about 3 µm can be compounded up to about 80000 particles / mm 2, but in this case, high-precision bumps can be added. In addition to the need to create, it is necessary to strictly control the press accuracy at the time of connection, which causes a price increase.

또한, 일본국 특개평 4-174980호에는, 가열에 의해 변형되는 도전입자의 표면을 열가소성 절연층으로 피복한 절연피복입자와, 이 절연피복입자보다 경질인 두께제어입자를 가열에 의해 소성 유동성을 나타내는 절연성 접착제 중에 함유시킨 회로의 접속부재가 기재되어 있다.In addition, Japanese Patent Laid-Open No. 4-174980 discloses plastic fluidity by heating insulating coated particles coated with a thermoplastic insulating layer on the surface of the conductive particles deformed by heating, and thickness-controlled particles harder than the insulating coated particles. The connection member of the circuit contained in the insulating adhesive shown is described.

그러나, 이 접속부재는 두께제어입자가 절연체인 경우 이 두께제어입자는 도통에는 관여하지 않으므로 높은 도통신뢰성이 얻어지기 어렵다. 또 두께제어입자가 도체인 경우는 배합량이 많아지면 단락이 일어나 절연신뢰성이 얻어지지 않는다. 또한 두께제어입자는 변형되지 않으므로 입경에 불균일이 있는 경우 가장 큰 입경의 입자에 의해 두께가 제어되고, 이보다 소입경의 입자는 도통에 관여 하지 않으므로 도통신뢰성이 부족하다.However, this connection member is difficult to obtain high conduction reliability because this thickness control particle is not involved in conduction when the thickness control particle is an insulator. In the case where the thickness control particle is a conductor, when the compounding amount increases, a short circuit occurs and insulation reliability is not obtained. In addition, since the thickness control particles are not deformed, the thickness is controlled by the particle having the largest particle diameter when the particle size is uneven, and the particle size smaller than this is not involved in the conduction, so the reliability of the communication is insufficient.

또 일본국 특개평 9-102661호에는, 특정의 압축경도(K값)와 특정의 변형회복을 가지는 도전성 미립자를 사용한 전극간의 도전접속방법이 기재되어 있으나, 상기 도전성 미립자를 사용한 경우라도, 파인피치 IC의 접속에 있어서는 높은 도통신뢰성과 높은 절연신뢰성을 얻기는 힘들다.Japanese Patent Laid-Open No. 9-102661 discloses a conductive connection method between electrodes using conductive fine particles having a specific compressive hardness (K value) and a specific strain recovery. However, even when the conductive fine particles are used, fine pitch is used. When connecting ICs, it is difficult to obtain high conduction reliability and high insulation reliability.

본 발명의 목적은 범프 또는 피치가 작은 IC를 접속하는 경우라도 쇼트나 회로패턴에 손상을 주지 않고 높은 도통신뢰성과 절연신뢰성이 얻어져서 전기적 접속신뢰성이 우수하고 저코스트로 용이하게 접속할 수 있는 이방도전성 접착용 필름을 제공하는 것이다.An object of the present invention is to achieve high conduction reliability and insulation reliability without damaging shorts or circuit patterns even when connecting ICs with small bumps or pitches, so that the electrical connection reliability is excellent and the anisotropic conductivity can be easily connected at low cost. It is to provide an adhesive film.

제1도는 본 발명의 이방 도전성 필름의 단면도.1 is a cross-sectional view of the anisotropic conductive film of the present invention.

제2도는 본 발명의 이방 도전성 필름을 사용하여 액정표시기판과 구동용 집적회로를 접속시킨 상태의 단면도.2 is a cross-sectional view of a state in which a liquid crystal display substrate and a driving integrated circuit are connected by using the anisotropic conductive film of the present invention.

제3도는 종래의 이방 도전성 필름을 사용하여 액정표시기판과 구동용 집적회로를 접속시킨 상태의 단면도.3 is a cross-sectional view of a state in which a liquid crystal display substrate and a driving integrated circuit are connected by using a conventional anisotropic conductive film.

* 도면의 주요부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings

1. 절연성수지입자1. Insulating resin particles

2. 도전성 금속 피복 입자2. Conductive metal coating particles

3. 가압시 변형 수지 입자3. Deformation Resin Particles During Pressurization

4. 절연성 접착제4. insulating adhesive

5. 구도용 집적회로5. Composition integrated circuit

6. 액정표시기판6. LCD panel

7. 도전입자7. Conductive Particles

8. 용융된 절연성수지입자8. Molten insulating resin particles

본 발명은 에폭시기를 지닌 수지성분과 필름형성을 돕는 수지 성분을 주성분으로 하는 절연성 접착제중에 금속입자이고 가압에 의해 변형되는 입자인 도전입자및 접착조건에서 일부 또는 완전 용융되는 열가소성의 절연성수지입자가 분산된 것을 특징으로 하는 이방도전성 접착용 필름에 관한 것으로서, 이하에서 본 발명을 상세히 설명한다.The present invention is to disperse the conductive particles, which are metal particles and particles that are deformed by pressure, and thermoplastic insulating resin particles which are partially or completely melted in the bonding conditions in the insulating adhesive mainly composed of a resin component having an epoxy group and a resin component which helps to form a film. The present invention relates to an anisotropic conductive adhesive film, which will be described in detail below.

본 발명에서 얻어지는 이방도전성 접착용 필름은 에폭시기를 가지는 수지성분, 필름형성을 돕는 수지성분 및 경화제 그리고 도전성을 부여하기 위하여 도전입자 및 절연성수지입자를 첨가하는 것으로 되어 있으며, 이밖에 분산성 및 필름형성을 돕는 첨가제 등의 성분들이 혼합된 것으로, 제1도에 도시된 구조로 되어 있다.The anisotropically conductive adhesive film obtained in the present invention is a resin component having an epoxy group, a resin component and a curing agent to assist in film formation, and conductive particles and insulating resin particles are added to impart conductivity. In addition, dispersibility and film formation Components such as additives to help the mixture is mixed, and has the structure shown in FIG.

이방성도전필름의 구조는 에폭시계 절연성 접착제내에 금속입자 또는 수지입자에 금속이 코팅된 입자가 분산되어 있는 필름상으로 제2도에서와 같이 액정표시소자와 외부구동회로 등의 2개의 배선패턴간에 접속을 목적으로 하는 것으로 이를 접속시키기 위해 제3도에 나타나 있듯이 LCD판넬기판과 외부구동호로기판(TAB 또는 FPC)을 접합한후 가열, 가압함으로서 열경화성수지를 경화시키는 한편, 금속입자는 판넬의 양쪽 배선패턴사이에 구속되어 전기접속을 이루게 된다. 제4도는 종래의 이방도전성필름을 사용하여 액정표시소자와 구동용 집적회로를 접속시킨 상태의 단면도이다.The structure of the anisotropic conductive film is a film in which metal particles or metal coated particles are dispersed in an epoxy insulating adhesive, and is connected between two wiring patterns such as a liquid crystal display device and an external driving circuit as shown in FIG. As shown in FIG. 3, to connect them, the LCD panel substrate and the external driving arc substrate (TAB or FPC) are bonded together, and then heated and pressurized to cure the thermosetting resin, while the metal particles are hardened on both sides of the panel. It is constrained between the patterns to make an electrical connection. 4 is a cross-sectional view of a state in which a liquid crystal display device and a driving integrated circuit are connected by using a conventional anisotropic conductive film.

본 발명에서 사용한 에폭시기를 가지는 수지성분으로는 1분자내에 2개 이상의 에폭시기를 가지는 다가 에폭시수지가 사용되는 것이 바람직하며, 구체적인 예로는, 페놀노볼락이나 크레졸노볼락의 노볼락수지, 비스페놀A, 비스페놀F, 비스히드록시페닐에테르 등의 다가 페놀류, 에틸렌글리콜, 네오펜틸글리콜, 글리세린, 트리메틸올프로판, 폴리프로필렌글리콜 등의 다가 알코올류, 에틸렌디아민, 트리에틸렌테트라아민, 아닐린 등의 폴리아미노화합물, 프탈산, 이소프탈산 등의 다가 카르복시화합물과 그 외 다양한 지방족, 방향족 에폭시수지등이 있으며, 이것들은 단독 혹은 2개 이상 혼합하여 사용할 수 있다.As the resin component having an epoxy group used in the present invention, it is preferable to use a polyvalent epoxy resin having two or more epoxy groups in one molecule. Specific examples thereof include a phenol novolak, a novolak resin of cresol novolak, a bisphenol A, and a bisphenol. Polyhydric phenols such as F and bishydroxyphenyl ether, polyhydric alcohols such as ethylene glycol, neopentyl glycol, glycerin, trimethylolpropane, polypropylene glycol, polyamino compounds such as ethylenediamine, triethylenetetraamine, aniline, and phthalic acid And polyvalent carboxy compounds such as isophthalic acid and various aliphatic and aromatic epoxy resins, and these can be used alone or in combination of two or more.

상기의 수지조성물에 필름형성을 돕는 수지로는 선택된 경화제와 화학적인 반응을 하지 않으면서 필름형성이 잘 될 수 있는 수지가 사용가능하다. 구체적인 예로는 아크릴레이트수지, 에틸렌아크릴레이트공중합체, 에틸렌아크릴산공중합체 등의 아크릴수지, 에틸렌수지, 에티렌프로필렌공중합체 등의 올레핀수지, 부타디엔수지, 아크릴로나이트릴부타디엔공중합체, 스티렌부타디엔블록공중합체, 스티렌부타디엔스티렌블록공중합체, 카르복시화스티렌에틸렌부타디엔스티렌블록공중합체, 에틸렌스티렌부틸렌블록공중합체, 나이트릴부타디엔고무, 스티렌부타디엔고무, 클로로프렌고무 등의 고무류, 비닐부티알수지, 비닐포름수지 등의 비닐류수지, 폴리에스터, 시아네이트에스터수지 등의 에스터수지류, 그 외에 페녹시수지, 실리콘 고무, 우레탄 수지등이 있으며, 이것들을 단독 혹은 2개 이상 혼합하여 사용할 수 있다.As the resin which helps to form a film in the resin composition, a resin which can form a film well without chemically reacting with a selected curing agent may be used. Specific examples include acrylic resins such as acrylate resins, ethylene acrylate copolymers and ethylene acrylic acid copolymers, olefin resins such as ethylene resins and ethylene propylene copolymers, butadiene resins, acrylonitrile butadiene copolymers, and styrene butadiene blocks. Copolymer, styrene butadiene styrene block copolymer, carboxylated styrene ethylene butadiene styrene block copolymer, ethylene styrene butylene block copolymer, nitrile butadiene rubber, styrene butadiene rubber, chloroprene rubber and other rubbers, vinyl buty resin, vinyl form resin Ester resins such as vinyl resins, polyesters, cyanate ester resins, and the like, and phenoxy resins, silicone rubbers, urethane resins, and the like, and these may be used alone or in combination of two or more thereof.

상기의 경화제성분으로는 1분자내에 2개이상의 활성수소를 가지는 것이라면 사용가능하다. 구체적인 예로는 이미다졸계, 이소시아네이트계, 아민계, 아미드계, 산무수물계가 있으며, 이것들을 단독 혹은 2개 이상 혼합하여 사용함으로서 경화속도를 조정할 수 있다.As said hardening | curing agent component, it can use if it has two or more active hydrogens in 1 molecule. Specific examples include imidazole series, isocyanate series, amine series, amide series, and acid anhydride series, and curing rates can be adjusted by using these alone or by mixing two or more thereof.

본 발명에 사용된 도전입자로는 금속입자나 무기 또는 유기입자에 금속을 코팅한 것으로 입경이 수 미크론인 입자가 사용가능하며, 구체적인 예로는 철, 망간,아연, 금, 은, 니켈 등의 금속입자나 수지입자의 표면을 상기 금속으로 코팅한 입자가 사용될 수 있으며, 이것들을 단독 혹은 2개 이상 혼합하여 사용할 수 있다. 본 발명에서 사용하는 도전성입자는 평균입경이 1~10㎛(좀 더 바람직하게는 3~5㎛)인 것이 바람직하다.As the conductive particles used in the present invention, metal particles or inorganic or organic particles may be coated with metal, and particles having a particle size of several microns may be used. Specific examples thereof include metals such as iron, manganese, zinc, gold, silver, and nickel. Particles coated with the metal on the surface of the particles or resin particles may be used, these may be used alone or mixed two or more. It is preferable that the electroconductive particle used by this invention is 1-10 micrometers (more preferably, 3-5 micrometers).

또한 본 발명에서 사용되는 절연성수지입자로서는 각종의 열경화성수지, 열가소성의 수지나 고무를 사용할 수 있으나, 바람직하게는 접속 후의 신뢰성의 점에서 열가소성의 수지가 바람직하다. 사용될 수 있는 절연성수지입자의 구체적인 예로는 아크릴레이트수지, 에틸렌아크릴레이트공중합체, 에틸렌아크릴산공중합체 등의 아크릴수지, 에틸렌수지, 에틸렌프로필렌공중합체 등의 올레핀수지, 부타디엔수지, 아크릴로나이트릴부타디엔공중합체, 스티렌부타디엔블록공중합체, 스티렌부타디엔스티렌블록공중합체, 카르복시화스티렌에틸렌부타디엔스티렌블록공중합체, 에틸렌스티렌부틸렌블록공중합체, 나이트릴부타디엔고무, 스티렌부타디엔고무, 클로로프렌고무 등의 고무류, 비닐부틸알수지, 비닐포름수지 등의 비닐류수지, 폴리에스터, 시아네이트에스터수지 등의 에스터수지류, 그 외에 페녹시수지, 실리콘 고무, 우레탄수지로 된 입자등이 있으며 이것들을 단독 혹은 2개 이상 혼합하여 사용할 수 있다.As the insulating resin particles used in the present invention, various thermosetting resins, thermoplastic resins and rubbers can be used. Preferably, thermoplastic resins are preferable in terms of reliability after connection. Specific examples of insulating resin particles that can be used include acrylic resins such as acrylate resins, ethylene acrylate copolymers, ethylene acrylic acid copolymers, olefin resins such as ethylene resins, ethylene propylene copolymers, butadiene resins, acrylonitrile butadiene, etc. Copolymer, styrene butadiene block copolymer, styrene butadiene styrene block copolymer, carboxylated styrene ethylene butadiene styrene block copolymer, ethylene styrene butylene block copolymer, nitrile butadiene rubber, styrene butadiene rubber, chloroprene rubber, vinyl butyl rubber Vinyl resins such as al resins and vinyl form resins, ester resins such as polyester and cyanate ester resins, and particles of phenoxy resins, silicone rubbers and urethane resins. Can be used.

본 발명의 이방도전성 접착용 필름 중에 함유되는 절연성수지입자의 융점은 고융점의 절연성수지입자의 경우 150℃~200℃이며, 저융점의 절연성수지입자의 경우 80℃~150℃이며 이방도전성 접착용 필름 중에 고융점의 절연성수지입자 또는 저융점의 절연성수지입자를 단독 또는 두가지를 동시에 사용할 수 있는데, 특히 융점이 100℃~130℃인 것이 IC칩을 회로기판에 접속시 도통신뢰성 및 절연신뢰성을 유지시키는데 더욱 유용하다.Melting point of the insulating resin particles contained in the anisotropic conductive adhesive film of the present invention is 150 ℃ ~ 200 ℃ for insulating resin particles of high melting point, 80 ℃ ~ 150 ℃ for insulating resin particles of low melting point and anisotropic conductive adhesive In the film, high melting point insulating resin particles or low melting point insulating resin particles can be used alone or in combination. Especially, the melting point of 100 ℃ ~ 130 ℃ keeps the conduction reliability and insulation reliability when connecting the IC chip to the circuit board. It is more useful to

본 발명의 이방도전성 접착용 막 중에 함유되는 절연성수지입자는 그 입자경이 도전입자의 입자경에 0.5배~2.0배(보다 바람직하게는 0.7배~1.2배)인 것이 바람직하다. 입자경이 2㎛ 이하일 경우는 입자들의 응집이 예상되고 IC칩을 회로기판에 접속시 절연신뢰성이 문제가 될 수 있으며, 절연성수지입자의 입경이 10㎛ 이상일 경우는 IC칩을 회로기판에 접속시 도통신뢰성을 유지할 수 없게 된다.It is preferable that the insulating resin particles contained in the anisotropically conductive adhesive film of the present invention have a particle diameter of 0.5 times to 2.0 times (more preferably 0.7 times to 1.2 times) to the particle diameter of the conductive particles. When the particle size is 2㎛ or less, the aggregation of particles is expected, and insulation reliability may be a problem when the IC chip is connected to the circuit board. When the particle size of the insulating resin particles is 10 μm or more, it is conducted when the IC chip is connected to the circuit board. The reliability cannot be maintained.

본 발명의 이방도전성 접착용 막 중에 함유되는 도전입자 및 절연성수지입자의 배합량은 도전입자의 경우 20000~80000개/㎟(보다 바람직하게는 30000~60000개/㎟)가 바람직하며, 절연성수지입자의 경우는 특히 한정되지는 않지만, 도전입자 대 절연성수지입자 배합중량 비율이 10:1~1:10(보다 바람직하게는 3:1~1:3)로 하여 투입하는 것이 바람직하다.The amount of the conductive particles and insulating resin particles contained in the anisotropic conductive adhesive film of the present invention is preferably 20000 to 80000 pieces / mm 2 (more preferably 30000 to 60000 pieces / mm 2) for the conductive particles. Although the case is not specifically limited, It is preferable to introduce | transduce into which the compounding weight ratio of a conductive particle to insulating resin particle is 10: 1-1: 10 (more preferably 3: 1-1: 3).

또한, 절연성 접착제 성분에 대한 도전입자의 배합량은 3~10중량%가 적당한데, 3중량% 이하에서는 안정한 도전통로를 얻기가 어렵고, 10중량% 이상에서는 접속 회로간의 절연신뢰성을 얻기가 힘들다.In addition, the compounding amount of the conductive particles to the insulating adhesive component is suitably 3 to 10% by weight, it is difficult to obtain a stable conductive path at less than 3% by weight, it is difficult to obtain the insulation reliability between the connection circuit at 10% by weight or more.

이하에서 본 발명을 실시예 및 비교실시예를 통하여 보다 상세하게 설명한다.Hereinafter, the present invention will be described in more detail with reference to Examples and Comparative Examples.

<실시예 1><Example 1>

NBR고무(75중량부), 비스페놀A형에폭시수지(에폭시당량 6000, 15중량부)와 경화제 2-메틸이미다졸(7중량부)을 톨루엔 및 메칠에틸케톤의 혼합용매에 용해시킨후 입자크기가 5㎛정도되는 아크릴수지입자를 실란카풀링제와 함께 잘 분산시킨 다음 이형PET필름 위에 코팅하여 건조후 두께 25㎛의 필름을 만들었다. 단위면적당의 필름 중에 함유된 도전입자의 개수는 20000개/㎟이고, 아크릴수지입자의 개수는 25000개㎟이었다.NBR rubber (75 parts by weight), bisphenol-A epoxy resin (6000 equivalents, 15 parts by weight) and curing agent 2-methylimidazole (7 parts by weight) are dissolved in a mixed solvent of toluene and methyl ethyl ketone, followed by particle size. The acrylic resin particles having a thickness of about 5 μm are well dispersed with a silane capping agent and then coated on a release PET film to make a film having a thickness of 25 μm after drying. The number of conductive particles contained in the film per unit area was 20000 pieces / mm 2, and the number of acrylic resin particles was 25000 pieces mm 2.

이 이방도전성 접착용 필름을 사용하여 다음과 같이 IC칩의 도통평가 및 절연평가를 행하였다.The conduction evaluation and insulation evaluation of an IC chip were performed using this anisotropically conductive adhesive film as follows.

도통평가Continuity Evaluation

사용된 평가용 IC칩의 범프 높이는 모두 약 40㎛, IC 사이즈는 6mm ×mm이다.The bump heights of the evaluation IC chips used were all about 40 µm and the IC size was 6 mm x mm.

기판:BT수지 0.7mm 두께의 기판 상에, 8㎛ 두께의 Cu 및 Au 도금으로 배선패턴을 형성한 기판, 배선패턴간의 피치는 150㎛.Substrate: A substrate on which a wiring pattern was formed by Cu and Au plating having a thickness of 8 µm on a substrate of 0.7 mm thick BT resin, and the pitch between the wiring patterns was 150 µm.

상기 IC칩과 기판과의 사이(범프 높이와 배선패턴 높이와의 합계는 약 58㎛에 상기 이방도전성 접착용 막을 기재시킨 상태에서, 온도 200℃, 압력 400㎏/㎠-범프의 조건으로 20초간 가열가압하고, 압착하여 접속했다. 이 접속샘플을 85℃, 85%RH, 1000Hr 에이징한 후, 저항상승치로 도통신뢰성을 평가했다. 결과를 표 1에 나타내었다.Between the IC chip and the substrate (the sum of the bump height and the wiring pattern height is about 58 µm for 20 seconds under the condition of the temperature of 200 ° C and the pressure of 400 kg / cm 2-bump with the anisotropic conductive adhesive film described thereon) After heating pressurization, crimping | bonding, and connecting this connection sample was 85 degreeC, 85% RH, and 1000Hr aging, the conduction reliability was evaluated by the resistance rise value.

: 저항 상승치 0.1Ω이하 : Resistance rise below 0.1Ω

△ : 저항 상승 0.1Ω를 초과하여 0.3이하(Triangle | delta): Resistance increase exceeding 0.1Ω and below 0.3

× : 저항 상승 0.3Ω초과×: resistance rise exceeding 0.3Ω

절연평가Insulation evaluation

IC칩: 범프 사이즈=70㎛ ×100㎛, 스페이스=10㎛, 범프 높이=20㎛, IC사이즈=6mm ×6mm 기판: 유리상에 ITO(Indium Tin Oxide)로 배선패턴을 작성한 투명기판, 피치=80㎛, 라인=70㎛, 쇼트 발생의 유무를 현미경으로 확인하기 위해 투명기판을 사용.IC chip: bump size = 70 μm × 100 μm, space = 10 μm, bump height = 20 μm, IC size = 6 mm × 6 mm Substrate: Transparent substrate with wiring pattern made of ITO (Indium Tin Oxide) on glass, Pitch = 80 A transparent substrate is used to check the presence or absence of a short circuit with a micrometer, a line = 70 micrometers, and a short circuit.

상기IC칩과 기판을 도통평가의 경우와 동일하게 하여 접속했다. 이 접속샘플을 85℃, 85%RH, 1000Hr 에이징한 후, 인접하는 2핀 25V, 1min 인가하여, 절연저항을 평가했다. 결과를 표 1에 나타냈다.The IC chip and the substrate were connected in the same manner as in the case of conduction evaluation. After aging this connection sample at 85 degreeC, 85% RH, and 1000 Hr, the adjacent 2 pin 25V and 1min were applied, and insulation resistance was evaluated. The results are shown in Table 1.

1010Ω이상: 10 10 Ω or more:

1010Ω이상: ×10 10 Ω or more: ×

<실시예 2~5, 비교예 1~8><Examples 2-5, Comparative Examples 1-8>

실시예 1의 절연성수지입자의 종류 및 배합량을 표 1 또는 표 2에 나타낸 바와같이 변경한 이외는 실시예 1과 동일하게 하여 실시하였으며, IC칩의 도통평가 및 절연평가를 실시예 1과 동일하게 측정하여 하기 표 1에 나타내었다.Except having changed the kind and compounding quantity of the insulating resin particle of Example 1 as shown in Table 1 or Table 2, it carried out similarly to Example 1, and conducted conduction evaluation and insulation evaluation of IC chip similarly to Example 1. The measurement is shown in Table 1 below.

상기 실시예 및 비교예에 나타나듯이 본 발명의 이방도전성 접착용 필름은 절연성 접착제 중에 도전입자와 함께 열변형 또는 용융되는 절연성수지입자를 함유하고 있으므로 범프 또는 피치가 작은 IC를 접속하는 경우라도, 쇼트나 회로패턴에의 대미지를 주지 않고 높은 도통신뢰성과 높은 절연 신뢰성이 얻어지고 더욱이 저코스트로 용이하게 접속할 수 있다.As shown in the above Examples and Comparative Examples, the anisotropic conductive adhesive film of the present invention contains insulating resin particles which are thermally deformed or melted together with the conductive particles in the insulating adhesive, so that even when an IC having a small bump or pitch is connected, High conduction reliability and high insulation reliability can be obtained without damaging the circuit pattern, and furthermore, it can be easily connected at low cost.

Claims (4)

에폭시기를 지닌 수지성분과 필름형성을 돕는 수지성분을 주성분으로 하는 절연성 접착제중에 금속입자이고 가압에 의해 변형되는 입자로 된 도전입자 및 접착조건에서 일부 또는 완전용융되는 절연성수지입자가 분산된 이방도전성 접착용 필름.Anisotropic conductive adhesive in which conductive particles composed of metal particles, particles deformed by pressure, and insulating resin particles which are partially or completely melted under the bonding conditions are dispersed in an insulating adhesive mainly composed of a resin component having an epoxy group and a resin component for forming a film. Dragon film. 제 1 항에 있어서, 도전입자는 평균입경이 1~10㎛인 금속입자나 또는 무기, 유기 입자에 금속을 코팅한 입자인 이방도전성 접착용 필름.The film for anisotropic conductive bonding according to claim 1, wherein the conductive particles are metal particles having an average particle diameter of 1 to 10 µm or particles obtained by coating a metal on inorganic or organic particles. 제 1 항에 있어서, 절연성수지입자는 융점이 150~200℃인 고융점의 열가소성 수지입자와 융점이 80~150℃인 저융점의 열가소성 수지입자를 단독 또는 혼합하여 사용된 것인 이방도전성 접착용 필름.The anisotropic conductive adhesive according to claim 1, wherein the insulating resin particles are used alone or in combination of high melting point thermoplastic resin particles having a melting point of 150 to 200 ° C and low melting point thermoplastic resin particles having a melting point of 80 to 150 ° C. film. 제 3 항에 있어서, 절연성수지입자는 융점이 100~130℃인 이방도전성 접착용 필름.The film for anisotropic conductive adhesive according to claim 3, wherein the insulating resin particles have a melting point of 100 to 130 ° C.
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KR100435034B1 (en) * 2001-11-08 2004-06-09 엘지전선 주식회사 Anisotropic conductive film
KR20070118901A (en) * 2006-06-13 2007-12-18 주식회사 엘지화학 Anisotropic conductive film comprising polymer conductor
KR100852371B1 (en) * 2005-08-04 2008-08-14 엔이씨 엘씨디 테크놀로지스, 엘티디. Display device having an anisotropic conductive adhesive film
CN113362988A (en) * 2021-05-21 2021-09-07 苏州鑫导电子科技有限公司 Anisotropic conductive filament, preparation method thereof and anisotropic conductive film with conductive filament

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WO2011019132A1 (en) * 2009-08-14 2011-02-17 중앙대학교 산학협력단 Conductive adhesive, semiconductor mounting method using same, and wafer level package
JP6293524B2 (en) * 2014-03-11 2018-03-14 デクセリアルズ株式会社 Anisotropic conductive film, method for producing the same, connection method and joined body

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JP3048197B2 (en) * 1992-08-05 2000-06-05 シャープ株式会社 Anisotropic conductive film
JPH06333965A (en) * 1993-05-20 1994-12-02 Three Bond Co Ltd Anisotropic conductive adhesive sheet
JP3103956B2 (en) * 1993-06-03 2000-10-30 ソニーケミカル株式会社 Anisotropic conductive film
JPH11339559A (en) * 1998-05-26 1999-12-10 Toshiba Chem Corp Anisotropic conductive adhesive

Cited By (4)

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Publication number Priority date Publication date Assignee Title
KR100435034B1 (en) * 2001-11-08 2004-06-09 엘지전선 주식회사 Anisotropic conductive film
KR100852371B1 (en) * 2005-08-04 2008-08-14 엔이씨 엘씨디 테크놀로지스, 엘티디. Display device having an anisotropic conductive adhesive film
KR20070118901A (en) * 2006-06-13 2007-12-18 주식회사 엘지화학 Anisotropic conductive film comprising polymer conductor
CN113362988A (en) * 2021-05-21 2021-09-07 苏州鑫导电子科技有限公司 Anisotropic conductive filament, preparation method thereof and anisotropic conductive film with conductive filament

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