KR20010063329A - Epoxy molding compound for sealing of electronic component - Google Patents
Epoxy molding compound for sealing of electronic component Download PDFInfo
- Publication number
- KR20010063329A KR20010063329A KR1019990060371A KR19990060371A KR20010063329A KR 20010063329 A KR20010063329 A KR 20010063329A KR 1019990060371 A KR1019990060371 A KR 1019990060371A KR 19990060371 A KR19990060371 A KR 19990060371A KR 20010063329 A KR20010063329 A KR 20010063329A
- Authority
- KR
- South Korea
- Prior art keywords
- epoxy resin
- weight
- epoxy
- resin composition
- group
- Prior art date
Links
- 238000007789 sealing Methods 0.000 title abstract description 6
- 229920006336 epoxy molding compound Polymers 0.000 title 1
- 239000003822 epoxy resin Substances 0.000 claims abstract description 56
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 56
- 239000004593 Epoxy Substances 0.000 claims abstract description 33
- 239000000203 mixture Substances 0.000 claims abstract description 29
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 claims abstract description 26
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000003063 flame retardant Substances 0.000 claims abstract description 14
- 239000006087 Silane Coupling Agent Substances 0.000 claims abstract description 11
- 125000003396 thiol group Chemical group [H]S* 0.000 claims abstract description 10
- HCQNICZDJDXVBL-UHFFFAOYSA-N 2-[[2-methyl-6-(oxiran-2-ylmethyl)-3-(2,3,4,5,6-pentamethylphenyl)phenyl]methyl]oxirane Chemical group C(C1CO1)C1=C(C(=C(C=C1)C1=C(C(=C(C(=C1C)C)C)C)C)C)CC1CO1 HCQNICZDJDXVBL-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000011256 inorganic filler Substances 0.000 claims abstract description 7
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 7
- 239000004848 polyfunctional curative Substances 0.000 claims abstract description 6
- -1 oxo cresol Chemical compound 0.000 claims description 16
- 238000002360 preparation method Methods 0.000 claims description 16
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 11
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 11
- 229910052794 bromium Inorganic materials 0.000 claims description 10
- 229930003836 cresol Natural products 0.000 claims description 10
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 claims description 9
- 239000003054 catalyst Substances 0.000 claims description 8
- 239000011342 resin composition Substances 0.000 claims description 4
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- CIPOCPJRYUFXLL-UHFFFAOYSA-N 2,3,4-tris[(dimethylamino)methyl]phenol Chemical compound CN(C)CC1=CC=C(O)C(CN(C)C)=C1CN(C)C CIPOCPJRYUFXLL-UHFFFAOYSA-N 0.000 claims description 2
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 claims description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 2
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- 229960002887 deanol Drugs 0.000 claims description 2
- GPAYUJZHTULNBE-UHFFFAOYSA-N diphenylphosphine Chemical compound C=1C=CC=CC=1PC1=CC=CC=C1 GPAYUJZHTULNBE-UHFFFAOYSA-N 0.000 claims description 2
- 239000012948 isocyanate Substances 0.000 claims description 2
- 150000002513 isocyanates Chemical class 0.000 claims description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 2
- RPGWZZNNEUHDAQ-UHFFFAOYSA-N phenylphosphine Chemical compound PC1=CC=CC=C1 RPGWZZNNEUHDAQ-UHFFFAOYSA-N 0.000 claims description 2
- 150000003839 salts Chemical class 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- ARYZCSRUUPFYMY-UHFFFAOYSA-N methoxysilane Chemical compound CO[SiH3] ARYZCSRUUPFYMY-UHFFFAOYSA-N 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 17
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 abstract 2
- 238000012360 testing method Methods 0.000 description 12
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 10
- 229920005989 resin Polymers 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- 239000003795 chemical substances by application Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 238000011156 evaluation Methods 0.000 description 8
- 230000007797 corrosion Effects 0.000 description 7
- 238000005260 corrosion Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 239000000565 sealant Substances 0.000 description 6
- 235000010290 biphenyl Nutrition 0.000 description 5
- 239000004305 biphenyl Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 4
- 238000011049 filling Methods 0.000 description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- 239000003566 sealing material Substances 0.000 description 4
- 239000001993 wax Substances 0.000 description 4
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 239000006229 carbon black Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- CGEIJASJNVVERB-UHFFFAOYSA-N 1,2,3-trimethyl-4-(2,3,4-trimethylphenyl)benzene Chemical group CC1=C(C)C(C)=CC=C1C1=CC=C(C)C(C)=C1C CGEIJASJNVVERB-UHFFFAOYSA-N 0.000 description 2
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000004203 carnauba wax Substances 0.000 description 2
- 235000013869 carnauba wax Nutrition 0.000 description 2
- 238000002485 combustion reaction Methods 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- 150000004665 fatty acids Chemical class 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 239000003721 gunpowder Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 239000003607 modifier Substances 0.000 description 2
- 239000012778 molding material Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229920002545 silicone oil Polymers 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical compound S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- WHDHILGAYRPIIX-UHFFFAOYSA-N 1-[diethoxy(ethyl)silyl]oxyethanethiol Chemical compound CCO[Si](CC)(OCC)OC(C)S WHDHILGAYRPIIX-UHFFFAOYSA-N 0.000 description 1
- QCBSYPYHCJMQGB-UHFFFAOYSA-N 2-ethyl-1,3,5-triazine Chemical compound CCC1=NC=NC=N1 QCBSYPYHCJMQGB-UHFFFAOYSA-N 0.000 description 1
- LOSLJXKHQKRRFN-UHFFFAOYSA-N 2-trimethoxysilylethanethiol Chemical compound CO[Si](OC)(OC)CCS LOSLJXKHQKRRFN-UHFFFAOYSA-N 0.000 description 1
- SHJAXTRBDPLIFW-UHFFFAOYSA-N 4-(4-hydroxy-2,3-dimethylphenyl)-2,3,5,6-tetramethylphenol Chemical compound C1=C(O)C(C)=C(C)C(C=2C(=C(C)C(O)=C(C)C=2C)C)=C1 SHJAXTRBDPLIFW-UHFFFAOYSA-N 0.000 description 1
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004594 Masterbatch (MB) Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RPCGDCYHXWVDNM-UHFFFAOYSA-N [dimethoxy(methyl)silyl]oxymethanethiol Chemical compound CO[Si](C)(OC)OCS RPCGDCYHXWVDNM-UHFFFAOYSA-N 0.000 description 1
- SKTKMCSFZQGBEL-UHFFFAOYSA-N [methoxy(dimethyl)silyl]oxymethanethiol Chemical compound CO[Si](C)(C)OCS SKTKMCSFZQGBEL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- VCCBEIPGXKNHFW-UHFFFAOYSA-N biphenyl-4,4'-diol Chemical compound C1=CC(O)=CC=C1C1=CC=C(O)C=C1 VCCBEIPGXKNHFW-UHFFFAOYSA-N 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 229910000436 dibromine trioxide Inorganic materials 0.000 description 1
- 150000001993 dienes Chemical class 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003623 enhancer Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Substances C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002715 modification method Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 125000000466 oxiranyl group Chemical group 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 235000019809 paraffin wax Nutrition 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 235000019271 petrolatum Nutrition 0.000 description 1
- DAFOCGYVTAOKAJ-UHFFFAOYSA-N phenibut Chemical compound OC(=O)CC(CN)C1=CC=CC=C1 DAFOCGYVTAOKAJ-UHFFFAOYSA-N 0.000 description 1
- 238000011417 postcuring Methods 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000007142 ring opening reaction Methods 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
- UNWZKBKTIYBBRV-UHFFFAOYSA-N tetraazanium;tetrachloride Chemical compound [NH4+].[NH4+].[NH4+].[NH4+].[Cl-].[Cl-].[Cl-].[Cl-] UNWZKBKTIYBBRV-UHFFFAOYSA-N 0.000 description 1
- NBXZNTLFQLUFES-UHFFFAOYSA-N triethoxy(propyl)silane Chemical compound CCC[Si](OCC)(OCC)OCC NBXZNTLFQLUFES-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
- C08K3/2279—Oxides; Hydroxides of metals of antimony
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/0008—Organic ingredients according to more than one of the "one dot" groups of C08K5/01 - C08K5/59
- C08K5/0025—Crosslinking or vulcanising agents; including accelerators
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/0008—Organic ingredients according to more than one of the "one dot" groups of C08K5/01 - C08K5/59
- C08K5/0066—Flame-proofing or flame-retarding additives
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/02—Halogenated hydrocarbons
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
- C08L63/04—Epoxynovolacs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
본 발명은 반도체 소지의 웨이퍼칩 면과 에폭시 밀봉재 사이의 박리 현상 및 고온, 고압, 다습하에서 장기간 시험한 후에도 패드면과 칩의 부식을 방지시킴으로써 신뢰성을 높인 반도체 소자 밀봉형 에폭시수지 조성물에 관한 것으로서, 더욱 상세하게는 올소 크레졸 에폭시 수지에 머캅토기를 지닌 실란 커플링제로 전처리 한 에폭시 수지 제조물과 디글리시딜 헥사메틸 비페닐을 기본 구조로 하고 여기에 브롬 에폭시와 삼산화 안티몬의 혼합물, 페놀 노블락계(Phenol Novlac) 경화제, 2종이상의 잠재성 경화 촉진제, 왁스, 무기 충전제가 함유된 것을 특징으로하는, 기계성 및 흡습성이 우수하고 신뢰성 및 성형 특성이 우수한 반도체 소자 밀봉용 에폭시 수지 조성물에 관한 것이다.The present invention relates to a semiconductor device-encapsulated epoxy resin composition having improved reliability by preventing corrosion between the pad surface and the chip even after long-term testing at a high temperature, high pressure, and high humidity under the peeling phenomenon between the wafer chip surface of the semiconductor material and the epoxy sealing material. More specifically, an oxo cresol epoxy resin has a base structure of an epoxy resin preparation pretreated with a silane coupling agent having a mercapto group, a diglycidyl hexamethyl biphenyl, and a mixture of bromine epoxy and antimony trioxide, Phenol Novlac) A curing agent, two or more kinds of latent curing accelerators, waxes, inorganic fillers, characterized in that the epoxy resin composition for sealing semiconductor devices excellent in mechanical and hygroscopic properties and excellent in reliability and molding properties.
최근 반도체 소자의 집적도는 나날이 향상되고 있으며 이에 따른 배선 소자크기가 대형화되고, 셀면적이 축소 지향적으로 바뀌고 있으며 배선이 다층화되고 있다. 한편 반도체 소자를 외부환경으로부터 보호하는 패키지(Package)는 프린트 기판으로의 고밀도 실장, 즉 표면 실장이라는 관점으로부터 소형·박형화가 가속화되고 있다.In recent years, the degree of integration of semiconductor devices has been improved day by day, and thus the size of wiring elements has been increased, the cell area has been changed in a reduction-oriented manner, and wiring has been multilayered. On the other hand, packages that protect semiconductor devices from the external environment are accelerating their size and thickness from the viewpoint of high-density mounting on a printed board, that is, surface mounting.
이와 같이 대형 반도체 소자를 소형·박형 패키지에 밀봉한 수지 밀봉형 반도체 장치에서는 외부환경의 온도 및 습도변화에 따른 열응력에 기인하여 패키지 크랙 또는 알루미늄 패드 부식 발생등으로 고장 발생의 빈도가 높아지게 된다. 이에 따라서 밀봉용 에폭시 수지 패키지 재료의 내크랙성, 저응력화를 통한 고신뢰성반도체 소자 에폭시 밀봉재를 요구하고 있다. 이를 만족하기 위한 방법으로는 내크랙성을 향상시키기 위하여 흡습률 저하, 접착 강도 및 고온 강도를 향상시키는 것이 있으며 응력을 낮추기 위하여 충진재를 조절하는 방법, 열팽창계수를 낮추는 방법, 개질제를 첨가함으로써 탄성을 저하시키는 방법등이 알려져있다.As described above, in a resin-sealed semiconductor device in which a large semiconductor device is sealed in a small and thin package, failure frequency is increased due to package crack or aluminum pad corrosion due to thermal stress caused by temperature and humidity changes in the external environment. Accordingly, there is a demand for a high reliability semiconductor device epoxy sealing material through crack resistance and low stress of the epoxy resin package material for sealing. In order to satisfy this, there are methods of reducing moisture absorption, improving adhesive strength and high temperature strength in order to improve crack resistance, controlling fillers in order to reduce stress, lowering thermal expansion coefficient, and elasticity by adding a modifier. The method of reducing is known.
저응력화에 따른 고충진화 기술(충진재 조합에 따른 고충진)은 이미 발전되어 있으며 이로써 패키지 열응력을 억제할 수 있게 되었다. 또한 탄성을 저하시키는 방법에서는, 각종 고무 성분에 의한 개질 방법(일본 특허 특개소 63-1894 및 특개평 5-291436)에 의하여 열안정성이 우수한 실리콘 중합체를 배합, 개질시킨 에폭시 수지 성형 재료가 폭 넓게 채택되고 있다. 상기 방법에서 실리콘 오일은 성형 재료의 기저 수지인 에폭시 수지 및 경화제와 상용성이 없기 때문에 기저 수지중에서 미립자 분산 형태(해도 구조)로 되므로 내열성을 유지시킨 상태에서 저탄성률을 이룰 수 있었다. 그러나 이러한 기술은 리드 프레임과 에폭시 밀봉재 및 리드온 칩과 에폭시 밀봉재와의 접착력이 저하되고 개질제를 도입할 경우 성형성이 불량해져서 신뢰성이 높은 반도체 소자를 얻기가 어렵다는 문제점이 있다.High filling technology due to low stress (high filling due to filler combination) has already been developed, which can suppress package thermal stress. Moreover, in the method of reducing elasticity, the epoxy resin molding material which mix | blended and modified the silicone polymer which was excellent in thermal stability by the modification method (Japanese Patent Laid-Open Nos. 63-1894 and 5-291436) by various rubber components is widely used. It is adopted. Since the silicone oil is incompatible with the epoxy resin, which is the base resin of the molding material, and the curing agent, the silicone oil is in the form of fine particle dispersion (island structure) in the base resin, thereby achieving a low modulus in the state of maintaining heat resistance. However, this technique has a problem in that the adhesion between the lead frame and the epoxy sealant and the lead-on chip and the epoxy sealant is degraded, and when the modifier is introduced, moldability is poor, making it difficult to obtain a highly reliable semiconductor device.
본 발명의 목적은 상기한 문제점을 해결하기 위하여 올소 크레졸 에폭시 수지를 머캅토기를 지닌 실란 커플링제로 전처리한 에폭시 수지 제조물을 사용하여 웨이퍼칩 면과 밀봉재 간의 접착 특성 및 장시간 동안 고온, 고압, 다습한 조건하에서도 칩면의 부식을 방지하는 효과를 가진 반도체 소자 밀봉용 에폭시 수지 조성물을 제공하는 것이다. 또한, 여기에 비페닐계 에폭시 수지를 도입시켜 기계적 특성, 내크랙성 및 유동 흐름성이 향상된 반도체 소자 밀봉용 에폭시 수지 조성물을 제공하는 것이다.An object of the present invention is to solve the above problems by using an epoxy resin product obtained by pretreatment of an olso cresol epoxy resin with a silane coupling agent having a mercapto group, and adhesive properties between the wafer chip surface and the sealing material, and high temperature, high pressure and humidity for a long time. It is to provide an epoxy resin composition for sealing a semiconductor element having an effect of preventing corrosion of the chip surface even under conditions. In addition, a biphenyl-based epoxy resin is introduced therein to provide an epoxy resin composition for sealing semiconductor devices with improved mechanical properties, crack resistance and flow flowability.
즉, 본 발명은That is, the present invention
(1)올소 크레졸 에폭시 수지를 머캅토기를 지닌 실란 커플링제로 전처리시킨 에폭시 수지 제조물 2-10중량%,(1) 2-10% by weight of an epoxy resin preparation in which an oxo cresol epoxy resin is pretreated with a silane coupling agent having a mercapto group,
(2)디글리시딜 헥사메틸 비페닐 에폭시 수지 1-8중량%,(2) 1-8% by weight of diglycidyl hexamethyl biphenyl epoxy resin,
(3)브롬 에폭시 난연제 및 삼산화 안티몬 혼합물 0.8-1.2중량%,(3) 0.8-1.2 wt% bromine epoxy flame retardant and antimony trioxide mixture,
(4)경화제 3-7.5중량%,(4) 3-7.5 weight% of hardeners,
(5)경화 촉진제 0.05-0.40중량%,(5) 0.05-0.40 weight% of hardening accelerators,
(6)무기 충전제 77-87중량%,(6) 77-87 weight% of inorganic fillers,
(7)왁스 0.1-0.2중량%(7) 0.1-0.2% by weight of wax
를 함유하는 것을 특징으로 하는 에폭시 수지 조성물을 제공하는 것이다.It is to provide an epoxy resin composition comprising a.
이하 본 발명을 상세히 설명하면 다음과 같다.Hereinafter, the present invention will be described in detail.
본 발명에서 올소 크레졸 에폭시 수지를 머캅토기를 지닌 실란 커플링제로 전처리시킨 에폭시 수지 제조물(1)은 반도체 칩과 수지와의 접착 특성을 개선시키고 칩이 부식되는 것을 방지할 목적으로 사용된다.In the present invention, the epoxy resin preparation (1) in which the oxo cresol epoxy resin is pretreated with a silane coupling agent having a mercapto group is used for the purpose of improving adhesion characteristics of the semiconductor chip and the resin and preventing the chip from corroding.
상기 성분(1)의 제조에 사용되는 머캅토기를 지닌 실란 커플링제는 하기 화학식 4의 화합물로서, 머캅토 메틸 트리 메톡시 실란, 머캅토 에틸 트리메톡시 실란, 머캅토 에틸 트리에톡시 실란, 머캅토 프로필 트리 에톡시실란, 머캅토 디메틸 디메톡시 실란, 페닐 감마 머캅토 프로필 트리에톡시 실란으로 구성된 그룹으로부터 선택된 하나 이상의 실란이 사용될 수 있다.The silane coupling agent having a mercapto group used in the preparation of the component (1) is a compound represented by the following formula (4), mercapto methyl trimethoxy silane, mercapto ethyl trimethoxy silane, mercapto ethyl triethoxy silane, mer One or more silanes selected from the group consisting of capto propyl triethoxysilane, mercapto dimethyl dimethoxy silane, phenyl gamma mercapto propyl triethoxy silane can be used.
(상기 식에서 R'는 각각 독립적으로 같거나 다른 메톡시, 에톡시, 수소, 페닐기이며; X는 C1-8의 알킬기임)(Wherein R 'is each independently the same or different methoxy, ethoxy, hydrogen, phenyl group; X is an alkyl group of C 1-8 )
머캅토기를 지닌 실란 커플링제의 바람직한 함량 비율은 상기 성분(1)제조에 사용되는 에폭시수지 100 중량%에 대하여 2-15중량%이다. 만일 함량 비율이 2중량% 미만이면 접착 특성 및 신뢰성 개선 효과가 충분하지 않으며, 15중량%를 초과하면 전처리 단계인 멜트 마스터 베치에서 수득한 후 고형화시키는데 어려움이 있다.The preferable content ratio of the silane coupling agent with a mercapto group is 2-15 weight% with respect to 100 weight% of epoxy resins used for manufacture of the said component (1). If the content ratio is less than 2% by weight, the effect of improving adhesion properties and reliability is not sufficient, and if the content ratio is more than 15% by weight, it is difficult to solidify after obtaining from the melt master batch which is a pretreatment step.
상기 성분(1)의 제조에 사용되는 올소 크레졸 에폭시 수지는 하기 화학식 1의 에폭시 수지로서, 올소 크레졸 노블락형 비페닐, 디싸이클로페타디엔, 나프탈렌계로 구성된 그룹으로부터 선택된 하나 이상의 에폭시 수지를 혼합하여 사용할 수 있다.The oxo cresol epoxy resin used in the preparation of the component (1) is an epoxy resin of the following general formula (1), and may be used by mixing one or more epoxy resins selected from the group consisting of an oxo cresol noblock type biphenyl, dicyclopetadiene, and naphthalene system. have.
(상기 식에서 R은 메틸기 또는 히드록시기이며; G는 글리시딜기임)(Wherein R is a methyl group or a hydroxy group; G is a glycidyl group)
상기한 바와 같이 실란 처리하여 제조된 에폭시 수지 제조물의 사용량은 전체 수지 조성물의 2-10중량%가 적당하다.As described above, the amount of the epoxy resin preparation prepared by the silane treatment is preferably 2-10% by weight of the total resin composition.
본 발명에서 사용된 디글리시딜 헥사메틸 비페닐 에폭시 수지(2)는 하기 화학식 2의 2,2 3,3 5,5 헥사메틸 4,4 비페놀(일본합성 고무)을 출발 물질로 하여 여기에 에피클로로 히드린을 넣어 저온에서 개환 반응을 진행시켜 수득된 하기 화학식 3의 디글리시딜 헥사 메틸 비페닐 에폭시 수지이다.The diglycidyl hexamethyl biphenyl epoxy resin (2) used in the present invention is excited by using 2,2 3,3 5,5 hexamethyl 4,4 biphenol (Japanese synthetic rubber) of the following general formula (2) as a starting material. It is a diglycidyl hexa methyl biphenyl epoxy resin of the following formula (3) obtained by putting epichlorohydrin in the ring-opening reaction at a low temperature.
(상기 식에서 R은 각각 독립적으로 같거나 다른 메틸기 또는 수소임)Wherein each R is independently the same or different methyl or hydrogen
자세한 합성 방법에 대해서는 제조예 1에 표시하였으며 이렇게 얻어진 수지의 물성은 에폭시 당량이 190-230인 고순도의 에폭시 수지로서, 연화점은 70-110℃이었다. 본 발명에서 사용된 디글리시딜 헥사 메틸 비페닐계 에폭시수지는 기존 비페닐 구조에 비하여 골격 구조가 강직하며 기계적 강도 및 수축 물성이 우수하여 조립 공정에서 틸트(tilt) 발생률이 상당히 저하되었는데, 바람직한 사용량은 전체 수지 조성물의 1-8중량%이다.The detailed synthesis method is shown in Preparation Example 1, and the physical properties of the resin thus obtained were high purity epoxy resins having an epoxy equivalent weight of 190-230, with a softening point of 70-110 ° C. The diglycidyl hexa methyl biphenyl epoxy resin used in the present invention has a rigid skeleton structure and excellent mechanical strength and shrinkage properties as compared to the conventional biphenyl structure, and thus the incidence of tilt in the assembly process is considerably reduced. The usage-amount is 1-8 weight% of all resin compositions.
본 발명에서 브롬 에폭시 난연제 및 삼산화 안티몬 혼합물(3)은 에폭시 조성물에 난연성을 부여하기 위하여 사용된다.In the present invention, the bromine epoxy flame retardant and antimony trioxide mixture 3 is used to impart flame retardancy to the epoxy composition.
상기 성분(3)을 구성하는 브롬 에폭시 난연제는 에폭시 당량 250∼300, 브롬 함량 35∼40%인 폴리 글리시딜 에테르 브롬화 페놀 에폭시이며, 여기에 삼산화 안티몬을 혼합하여 사용한다.The bromine epoxy flame retardant constituting the component (3) is a poly glycidyl ether brominated phenol epoxy having an epoxy equivalent of 250 to 300 and a bromine content of 35 to 40%, and antimony trioxide is mixed and used therein.
브롬과 삼산화 안티몬을 과량 사용할 경우에는 고온, 고압, 다습한 환경하에서 칩이 불순물 이온에 의하여 부식되도록 하여 반도체 칩의 신뢰성을 저하시키는 문제가 있다. 따라서 본 발명에 있어서 난연 UL94 V-0의 규격을 만족하는 범위내에서 신뢰성을 향상시키기 위한 상기 두 성분의 바람직한 함량은 전체 조성물의 0.8-1.2중량%이다.In the case of using an excessive amount of bromine and antimony trioxide, there is a problem in that the chip is corroded by impurity ions under high temperature, high pressure, and high humidity to deteriorate the reliability of the semiconductor chip. Therefore, in the present invention, the preferred content of the two components for improving reliability within the range satisfying the specification of flame retardant UL94 V-0 is 0.8-1.2% by weight of the total composition.
브롬 에폭시 난연제에 대한 삼산화 안티몬의 바람직한 혼합 구성 비율은 브롬 에폭시 난연제 100중량%를 기준으로 삼산화 안티몬 20-40중량%이다. 만일 삼산화 안티몬이 40 중량%를 초과하면 그을음이 많이 발생되어 후공정에서 마킹 상태가 불량해지고 신뢰성에 나쁜 영향을 미치며, 20 중량% 미만이면 난연 UL 94 V-0규격에 부합되지 않아서 좋지 않다.The preferred mixing proportion of antimony trioxide to bromine epoxy flame retardant is 20-40% by weight antimony trioxide based on 100% by weight bromine epoxy flame retardant. If antimony trioxide is more than 40% by weight soot is generated a lot of bad marking state in the post-process and adversely affect the reliability, if less than 20% by weight does not meet the flame retardant UL 94 V-0 standard.
본 발명에서 경화제(4)는 에폭시 조성물의 가격 및 성형성을 이유로 2개 이상의 수산기를 갖고 수산기 당량이 100 - 200인 페놀 노볼락 수지, 크레졸 노볼락 수지, 자일록(Xylok) 수지, 디사이클로펜타디엔 수지로 구성된 그룹으로부터 선택된 하나 이상의 경화제를 사용할 수 있다. 상기 성분(4)에서 에폭시 수지와 경화제의 바람직한 당량비는 수산기 당량에 대하여 에폭시 당량이 0.9-1.1이며, 또한 경화제의 바람직한 사용량은 전체 조성물의 3.0-7.5 중량%이다.In the present invention, the curing agent (4) is a phenol novolak resin, cresol novolak resin, Xylok resin, dicyclopenta having two or more hydroxyl groups and a hydroxyl equivalent weight of 100-200 due to the price and moldability of the epoxy composition. One or more curing agents selected from the group consisting of diene resins can be used. The preferred equivalent ratio of epoxy resin and hardener in component (4) is epoxy equivalent of 0.9-1.1 to hydroxyl equivalent, and the preferred amount of hardener is 3.0-7.5% by weight of the total composition.
본 발명에서 경화 촉진제(5)는 경화 촉매로서, 상기 성분(2)의 도입이 반응 속도에 영향을 미치기 때문에 사용하는 물질이며, 경화 속도를 조절기 위해 이소시안네이트형 잠재성 경화 촉매를 사용한다. 상세한 예로는 일본 씨코크社 트리아진 이소시안네이트 이미다졸 화합물 또는 트리페닐 포스핀 부가 생성물로서 테트라페닐포스포늄 테트라페닐보레이트, 트리페닐포스핀 테트라페닐보레이트, 테트라페닐보론염 등이며, 사용량은 전체 에폭시 수지 조성물에 대하여 0.05-0.40중량%가 적당하다. 또한 잠재성 촉매 단독으로는 원하는 경화 특성을 얻을 수 없기 때문에 타 촉매와 병용하여 사용하는 것이 유리하며 병용하여 사용할 수 있는 촉매로서는 아민 계통의 벤질디메틸아민, 트리에탄올아민, 트리에틸렌디아민, 디메틸아미노에탄올, 트리(디메틸아미노메틸)페놀, 트리페닐포스핀, 디페닐포스핀, 페닐포스핀으로 구성된 그룹으로부터 선택된 하나 이상의 촉매이다.In the present invention, the curing accelerator (5) is a material used because the introduction of the component (2) affects the reaction rate as a curing catalyst, and an isocyanate type latent curing catalyst is used to control the curing rate. Specific examples include tetraphenylphosphonium tetraphenylborate, triphenylphosphine tetraphenylborate, tetraphenylboron salt, etc., as a triazine isocyanate imidazole compound or triphenyl phosphine addition product of Seecok, Japan. 0.05-0.40 weight% is suitable with respect to the resin composition. In addition, since the latent catalyst alone does not obtain desired curing properties, it is advantageous to use it in combination with other catalysts. As a catalyst which can be used in combination, an amine-based benzyldimethylamine, triethanolamine, triethylenediamine, dimethylaminoethanol, At least one catalyst selected from the group consisting of tri (dimethylaminomethyl) phenol, triphenylphosphine, diphenylphosphine, phenylphosphine.
본 발명에서 무기 충전제(6)는 그 평균 입자가 0.1-35.0μm인 용융 또는 합성 실리카를 사용하는 것이 바림직하며, 바람직한 충전량은 조성물 전체에 대해 77-87중량%이다. 만일 충전량이 77 중량%미만이면 강도 및 열팽창화 방지 효과를 충분히 실현시킬 수 없고 수분의 침투가 용이해져서 신뢰성에 치명적이 되어 좋지 않으며, 87 중량%미만이면 유동 특성이 저하되어 성형성이 떨어져서 좋지 않다.In the present invention, the inorganic filler (6) preferably uses fused or synthetic silica having an average particle of 0.1-35.0 µm, and a preferable filling amount is 77-87% by weight based on the total composition. If the filling amount is less than 77% by weight, the strength and the effect of preventing thermal expansion cannot be sufficiently realized, and the penetration of moisture becomes easy, which is not critical to reliability, and if it is less than 87% by weight, the flow characteristics are deteriorated and the moldability is not good. .
본 발명에서 왁스(7)는 성형성을 위해서 사용되었는데, 고급 지방산, 천연 지방산, 파라핀계 왁스, 에스테르계 왁스등을 사용하였다.In the present invention, the wax (7) was used for formability, and higher fatty acids, natural fatty acids, paraffin waxes, ester waxes, and the like were used.
상기 성분들 이외에 필요에 따라서 카본블랙, 유·무기염료등의 착색제, 가교증진제, 난연보조제, 레벨링제 등을 사용할 수 있다.In addition to the above components, carbon black, coloring agents such as organic and inorganic dyes, crosslinking enhancers, flame retardant aids, leveling agents and the like may be used.
이하 실시예를 들어 본 발명을 구체화 할 것이며 다음의 실시예는 어디까지나 본 발명을 예시하기 위하여 사용된 것이지 본 발명의 보호 범위를 제한하고자 사용한 것은 아니다.The present invention will be described with reference to the following examples, and the following examples are only used to illustrate the present invention, but are not used to limit the protection scope of the present invention.
실시예Example
제조예 1:디글리시딜 헥사 메틸 비페닐 에폭시 수지의 제조Preparation Example 1 Preparation of Diglycidyl Hexamethyl Biphenyl Epoxy Resin
둥근 사구 플라스크 반응관에 2,2 '3,3' 5,5헥사메틸 4,4 '바이페놀 0.3몰과 에피클로하이드린 6몰을 넣은후 반응온도 100℃에서 테트라 암모늄 클로라이드 수용액 0.01몰을 플라스크내에 서서히 적하시키면서 질소 대기하에서 8시간 반응시킨후 온도를 5℃ 이하로 내려 50% 수산화나트륨 용액을 투입한다. 이때 온도를 5℃ 미만으로 유지시키면서 4시간정도 반응시킨다. 이렇게 하여 얻어진 제조물에 메탄올과 물의 혼합 수용액을 넣은후 강력 교반을 통한 정제, 건조 공정을 통하여 본 발명에서 사용된 비페닐 에폭시수지를 얻을 수 있었다.0.3 mole of 2,2 '3,3' 5,5 hexamethyl 4,4 'biphenol and 6 moles of epiclohydrin were added to a round-necked flask reaction tube, and 0.01 mole of aqueous tetraammonium chloride solution was added at a reaction temperature of 100 ° C. After slowly reacting in a nitrogen atmosphere for 8 hours, the temperature was lowered to 5 ° C or lower and 50% sodium hydroxide solution was added thereto. At this time, the reaction is carried out for about 4 hours while maintaining the temperature below 5 ℃. The mixed solution of methanol and water was added to the product thus obtained, and the biphenyl epoxy resin used in the present invention was obtained through the purification and drying process through strong stirring.
제조예 2:올소 크레졸 에폭시 수지를 감마-커플링제로 전처리시킨 에폭시 수지 제조물Preparation Example 2 Preparation of Epoxy Resin by Preprocessing Oxo Cresol Epoxy Resin with Gamma-Coupling Agent
한분자내에 옥시란기를 2개 이상 지닌 에폭시 당량 193의 올소 크레졸 노블락형 에폭시 수지(연화점65℃) 930g을 밀폐된 둥근 사구 플라스크 반응관에 넣어 온도 70∼90℃ 사이에서 충분히 녹이면서 교반하여 준다. 여기에 머캅토기를 지닌 실란 커플링제인 감마 머캅토 프로필트리 메톡시 실란을 70g 적하기로 투입시키면서 교반속도 800-1000rpm으로 10분 가량 혼합 교반 시켜준후 원하는 제조물을 얻을 수 있었다.930 g of an oxo cresol noblock type epoxy resin (softening point 65 ° C.) of 193 epoxy equivalents having two or more oxirane groups in a molecule are put in a closed round-neck flask reaction tube and stirred while sufficiently melting at a temperature of 70 to 90 ° C. The desired product was obtained after mixing and stirring the gamma mercapto propyltrimethoxy silane, which is a silane coupling agent having a mercapto group, at a stirring speed of 800-1000 rpm for about 10 minutes.
본 발명의 에폭시 수지 조성물은 소성의 배합량을 헨셀 믹서나 뢰디게 믹서를 사용하여 균일하게 분쇄시켜 혼합하여 수득된 1차 분말 제조물을 롤밀이나 니이더를 사용해서 100℃ 약 10분이내로 용융 혼련한뒤 냉각, 분쇄 과정을 거쳐 제조된다.The epoxy resin composition of the present invention is melt-kneaded the primary powder preparation obtained by uniformly pulverizing the compounding amount of the firing using a Henschel mixer or a Lodige mixer within about 10 minutes at 100 ℃ using a roll mill or a kneader. It is manufactured by cooling and grinding.
이렇게 하여 얻어진 에폭시 수지 조성물에 대하여 다음과 같은 방법으로 물성 및 신뢰성을 평가하였으며, 신뢰성 시험을 위해, Thin Small Outline Package형반도체 소자를 MPS(Multi Plunger System)성형기로 175℃에서 60초간 성형시킨후, 초음파(SAT)설비를 이용해서 리드 프레임 및 리드온 칩과 에폭시 밀봉재 사이의 박리도를 측정하였다.The properties and reliability of the epoxy resin composition thus obtained were evaluated by the following method.In order to test the reliability, a thin small outline package type semiconductor device was molded at 175 ° C. for 60 seconds using an MPS (Multi Plunger System) molding machine. The degree of peeling between the lead frame and the lead-on chip and the epoxy sealant was measured using an ultrasonic wave (SAT) facility.
이후 175℃에서 6시간 동안 후경화시킨후 오토클레이브(PERSS COOKER TEST)장치에 121℃, 2atm, 100%조건하에서 48시간, 96시간, 168시간, 480시간, 960시간까지 가혹 시험하여 제품의 특성 및 부식 정도를 평가하였다.After post-curing at 175 ℃ for 6 hours, the characteristics of the product by harsh testing up to 48 hours, 96 hours, 168 hours, 480 hours, 960 hours in 121 ℃, 2 atm, 100% conditions in the autoclave (PERSS COOKER TEST) device And the degree of corrosion was evaluated.
에폭시수지 조성물에 대한 실시예 및 비교예를 각각 표 1 및 표 2에 나타내었으며, 일반 물성 및 신뢰성 시험(박리)에 대한 결과는 각각 표 2 및 표 3에 나타내었다.Examples and comparative examples of the epoxy resin composition are shown in Table 1 and Table 2, respectively, and the results for the general physical properties and the reliability test (peeling) are shown in Tables 2 and 3, respectively.
(단위:중량%)(Unit: weight%)
[비고][Remarks]
1)머캅토 프로필 트리메톡시 실란에 의한 전처리 에폭시 화합물 : 제조예 21) Pretreatment epoxy compound with mercapto propyl trimethoxy silane: Preparation Example 2
2) 헥사메틸 바이페닐 에폭시 : 제조예 12) Hexamethyl biphenyl epoxy: Preparation Example 1
3) 일본화약 : Bren-s3) Japanese Gunpowder: Bren-s
4) 메이와 : MEH-7800SS4) Meiwa: MEH-7800SS
5) 2,4-디아미노-6-(2-2-메틸-1-이미다졸)에틸-1,3,5-트리아진5) 2,4-diamino-6- (2-2-methyl-1-imidazole) ethyl-1,3,5-triazine
(단위:중량%)(Unit: weight%)
[비고][Remarks]
1) Nippon kayaku : EOCN 1020-551) Nippon kayaku: EOCN 1020-55
2) Yuka shell : YX-4000 H2) Yuka shell: YX-4000 H
3) 일본화약 : ESB-400T3) Japanese Gunpowder: ESB-400T
4) UCC : Silan A-1874) UCC: Silan A-187
(불량수/총시험시료수)(Defective / Total Test Samples)
[물성 평가 방법][Property evaluation method]
* 스파이럴 플로우(Spiral Flow)* Spiral Flow
EMMI규격을 기준으로 금형을 제작하여 성형온도(175℃), 성형압력 70Kgf/㎠에서 유동길이를 평가.Mold was manufactured based on EMMI standard to evaluate the flow length at molding temperature (175 ℃) and molding pressure 70Kgf / ㎠.
* 겔 타임 (Gel Time)Gel Time
175℃ Hot Plate위에 에폭시 밀봉재 파우더를 멜팅시킨후부터 겔화 될때까지의 시간을 측정Measure the time from melting the epoxy sealant powder on the 175 ℃ hot plate to gelation
* 유리전이온도(Tg), 열팽장계수* Glass transition temperature (Tg), thermal expansion coefficient
TMA(Thermal mechanical Analyser)로 평가 (승온속도 10℃/min)Evaluated by TMA (Thermal mechanical Analyser) (Raising temperature 10 ℃ / min)
* 부착력 : 리드프레임(알로이 42)와 에폭시 밀봉재와의 인장력 (UTM 이용)* Attachment force: Tensile force between lead frame (alloy 42) and epoxy sealant (using UTM)
* 박리평가 :* Peel rating
웨이퍼 칩(LOC : Lead-on chip)과 에폭시 밀봉재간의 계면 평가 (발생한 반도체 소자 수/총시험한 반도체 소자 수) ; SAT설비로 평가Evaluation of the interface between a wafer chip (LOC: lead-on chip) and an epoxy sealing material (number of semiconductor devices generated / number of semiconductor devices tested); Evaluated with SAT facilities
프리컨디션조건 전 : 열충격시험은 진행하지 않은 상태에서 평가.Before preconditioning conditions: Evaluate the thermal shock test without proceeding.
프리컨디션조건 후 : 열충격시험후 평가After preconditioning condition: evaluation after thermal shock test
* 고온 고압 다습(PRESS COOKER TEST)* PRESS COOKER TEST
121℃ 2atm 100% 조건하에서 168시간 동안 방치한 후의 최종 제품의 특성 검사 및 칩의 부식 정도를 평가함Characterization of final product and evaluation of chip corrosion after 168 hours at 121 ℃ 2atm 100% condition
* 난연성 : UL 94 수직시험으로 1/16inch를 기준으로 함.* Flame retardant: UL 94 vertical test based on 1 / 16inch.
시편에 불꽃을 10초간 점촉시킨후 불꽃이 꺼지면 다시 10초간 불꽃을 점초시키는 시험 5회5 tests of sparking the flame for 10 seconds after the flame has gone out
표 3 및 표 4에서 나타낸 바와 같이 본 발명에 의한 에폭시 수지 조성물은 리드 온 칩 및 리드 프레임과 에폭시 밀봉재와의 접착 특성이 월등히 향상되었음을알수 있었으며 신뢰성측면에서도 우수한 특성을 나타내었다.As shown in Table 3 and Table 4, the epoxy resin composition according to the present invention was found to have significantly improved the adhesion properties between the lead-on chip and the lead frame and the epoxy sealant, and showed excellent characteristics in terms of reliability.
상기 표 1, 표 3 및 표 4의 결과를 통하여 확인되는 바와 같이, 본 발명의 에폭시 수지 조성물은 커플링제인 머캅토 실란으로 전처리된 에폭시 제조물과 디글리시딜 헥사메틸 비페닐을 기본 에폭시 수지로 적용하여 기계적 물성, 수지의 접착성 및 기타 제반 물성이 향상되어 신뢰성이 우수한 이점을 갖는다.As confirmed through the results of Table 1, Table 3 and Table 4, the epoxy resin composition of the present invention is a pre-treated epoxy preparation and diglycidyl hexamethyl biphenyl with a mercapto silane coupling agent as a basic epoxy resin By applying mechanical properties, resin adhesion and other physical properties are improved to have the advantage of excellent reliability.
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KR100359904B1 (en) * | 2000-09-04 | 2002-11-07 | 제일모직주식회사 | Epoxy molding compound for sealing of electronic component |
KR20030045393A (en) * | 2001-12-04 | 2003-06-11 | 제일모직주식회사 | Epoxy resin composition for use in package of semiconductor device |
KR100421927B1 (en) * | 2001-08-21 | 2004-03-12 | 제일모직주식회사 | Epoxy Resin Compound for Sealing Semiconductive Device |
KR100455337B1 (en) * | 2001-08-28 | 2004-11-12 | 제일모직주식회사 | Epoxy Resin Composition for Sealing Semiconductive Devices |
KR100480945B1 (en) * | 2001-12-28 | 2005-04-06 | 제일모직주식회사 | Epoxy Resin Composition for Sealing Semiconductor Device |
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KR20180069632A (en) * | 2016-12-15 | 2018-06-25 | 삼성에스디아이 주식회사 | Epoxy resin composition for encapsulating semicomductor device and semiconductor device encapsulated using the same |
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KR900002452A (en) * | 1988-07-30 | 1990-02-28 | 이수환 | Epoxy resin composition for sealing semiconductor device. |
JPH078939B2 (en) * | 1988-10-19 | 1995-02-01 | 沖電気工業株式会社 | Resin-sealed semiconductor device |
JPH02175747A (en) * | 1988-12-28 | 1990-07-09 | Nippon Steel Chem Co Ltd | Epoxy resin composition for sealing |
KR100364241B1 (en) * | 1997-12-29 | 2003-02-19 | 제일모직주식회사 | Epoxy resin composition for sealing of semiconductor device |
JP3479827B2 (en) * | 1998-04-27 | 2003-12-15 | 信越化学工業株式会社 | Epoxy resin composition for semiconductor encapsulation and semiconductor device |
KR100429363B1 (en) * | 1998-12-08 | 2004-10-14 | 제일모직주식회사 | Epoxy resin composition for semiconductor device sealing |
KR100458274B1 (en) * | 1998-12-30 | 2005-04-20 | 제일모직주식회사 | Epoxy resin composition for semiconductor device sealing |
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1999
- 1999-12-22 KR KR1019990060371A patent/KR100565420B1/en active IP Right Grant
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KR100359904B1 (en) * | 2000-09-04 | 2002-11-07 | 제일모직주식회사 | Epoxy molding compound for sealing of electronic component |
KR100421927B1 (en) * | 2001-08-21 | 2004-03-12 | 제일모직주식회사 | Epoxy Resin Compound for Sealing Semiconductive Device |
KR100455337B1 (en) * | 2001-08-28 | 2004-11-12 | 제일모직주식회사 | Epoxy Resin Composition for Sealing Semiconductive Devices |
KR20030045393A (en) * | 2001-12-04 | 2003-06-11 | 제일모직주식회사 | Epoxy resin composition for use in package of semiconductor device |
KR100480945B1 (en) * | 2001-12-28 | 2005-04-06 | 제일모직주식회사 | Epoxy Resin Composition for Sealing Semiconductor Device |
KR100543091B1 (en) * | 2002-09-18 | 2006-01-20 | 제일모직주식회사 | Epoxy resin composition for encapsulating semiconductor devices |
KR20180069632A (en) * | 2016-12-15 | 2018-06-25 | 삼성에스디아이 주식회사 | Epoxy resin composition for encapsulating semicomductor device and semiconductor device encapsulated using the same |
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