KR20010056886A - Semiconductor wafer chuck - Google Patents

Semiconductor wafer chuck Download PDF

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Publication number
KR20010056886A
KR20010056886A KR1019990058552A KR19990058552A KR20010056886A KR 20010056886 A KR20010056886 A KR 20010056886A KR 1019990058552 A KR1019990058552 A KR 1019990058552A KR 19990058552 A KR19990058552 A KR 19990058552A KR 20010056886 A KR20010056886 A KR 20010056886A
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KR
South Korea
Prior art keywords
wafer
wafer chuck
semiconductor wafer
chuck
vacuum
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KR1019990058552A
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Korean (ko)
Inventor
이동규
Original Assignee
박종섭
주식회사 하이닉스반도체
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Application filed by 박종섭, 주식회사 하이닉스반도체 filed Critical 박종섭
Priority to KR1019990058552A priority Critical patent/KR20010056886A/en
Publication of KR20010056886A publication Critical patent/KR20010056886A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PURPOSE: A semiconductor wafer chuck is provided to minimize a contact area with a wafer and thereby to reduce particles produced on the wafer and further to permit use of various-sized wafers. CONSTITUTION: The semiconductor wafer chuck(16) includes a central vacuum pad(13) which is connected to a rotating axis(11) and also supports a central portion of a lower surface of the wafer(12) by vacuum force, arm parts(14) which project crosswise from four sides of the central vacuum pad(13), and peripheral vacuum pads(15) each of which is formed at an outer end of each arm part(14) and also supports a peripheral portion of the lower surface of the wafer(12). The central and peripheral vacuum pads(13,15) have respectively vacuum holes formed therein. Since the wafer chuck(16) is contacted with the wafer(12) through only the vacuum pads(13,15), a contact area between the wafer chuck(16) and the wafer(12) is considerably decreased.

Description

반도체 웨이퍼 척{SEMICONDUCTOR WAFER CHUCK}Semiconductor Wafer Chuck {SEMICONDUCTOR WAFER CHUCK}

본 발명은 반도체 웨이퍼 척에 관한 것으로, 특히 척킹시 웨이퍼 뒷면의 접촉면적이 감소되도록 하여 이물질이 발생되는 것을 방지할 수 있도록 하는데 적합한 반도체 웨이퍼 척에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor wafer chucks, and more particularly, to semiconductor wafer chucks adapted to reduce the contact area of the back side of the wafer during chucking, thereby preventing foreign matters from occurring.

웨이퍼 제조공정중 노광을 마친 웨이퍼를 현상하기 위한 현상장치가 도 1에 도시되어 있는 바, 이를 간단히 설명하면 다음과 같다.A developing apparatus for developing an exposed wafer during a wafer manufacturing process is shown in FIG. 1, which will be briefly described as follows.

도시된 바와 같이, 종래의 현상장치는 회전 모터(1)의 모터축(1a)에 회전축(2)이 연결설치되어 있고, 그 회전축(2)의 상단부에는 웨이퍼(3)를 척킹하기 위한 원판형의 웨이퍼 척(4)이 고정설치되어 있으며, 그 웨이퍼 척(4)의 상부에는 웨이퍼(3)의 상측에서 웨이퍼(3)에 현상액(5)을 분사하기 위한 분사노즐(6)이 설치되어 있다.As shown in the drawing, the conventional developing apparatus is provided with the rotating shaft 2 connected to the motor shaft 1a of the rotating motor 1, and has a disc shape for chucking the wafer 3 at the upper end of the rotating shaft 2. Wafer chuck 4 is fixed, and an injection nozzle 6 for spraying the developer 5 onto the wafer 3 from above the wafer 3 is provided above the wafer chuck 4. .

상기와 같이 구성되어 있는 종래 현상장치는 웨이퍼 척(4)의 상면에 웨이퍼(3)를 얹어놓은 상태에서 웨이퍼(3)를 진공으로 흡착하고, 회전 모터(1)에 전원을 인가하면 모터축(1a)에 연결된 회전축(2)이 회전하면서 웨이퍼 척(4)을 회전하여 웨이퍼 척(4)의 상면에 척킹된 웨이퍼(3)가 일정속도로 회전하게 되는데, 이와 같이 회전하는 웨이퍼(3)의 상면에 분사노즐(6)을 통하여 현상액(5)을 분사하면 회전력에 의하여 웨이퍼(3)의 상면에 현상액(5)이 균일하게 도포되면서 현상이 이루어진다.In the conventional developing apparatus configured as described above, when the wafer 3 is placed on the upper surface of the wafer chuck 4, the wafer 3 is sucked in a vacuum, and when the power is applied to the rotary motor 1, the motor shaft ( As the rotating shaft 2 connected to 1a rotates, the wafer chuck 4 is rotated so that the wafer 3 chucked on the upper surface of the wafer chuck 4 rotates at a constant speed. When the developing solution 5 is sprayed on the upper surface through the spray nozzle 6, the developing solution 5 is uniformly applied to the upper surface of the wafer 3 by the rotating force, thereby developing.

그러나, 상기와 같은 종래의 현상장치는 웨이퍼 척(4)의 상면에 웨이퍼(3)의 하측 전면에 접촉하는 상태이므로 웨이퍼 척(4)에서 발생되는 이물질들이 웨이퍼(3)의 하면에 많이 발생되는 문제점이 있었고, 그와 같은 웨이퍼 척(4)이 한가지 종류의 웨이퍼(3)에 대해서만 작업이 가능하여 크기가 다른 웨이퍼(3)의 작업시에 장비를 교체하여야 하는 문제점을 가지고 있었다.However, in the conventional developing apparatus as described above, the upper surface of the wafer chuck 4 is in contact with the lower front surface of the wafer 3, so that foreign substances generated in the wafer chuck 4 are generated on the lower surface of the wafer 3. There was a problem, such a wafer chuck (4) is only possible to work on one type of wafer (3) had a problem that the equipment must be replaced when working with different size wafers (3).

상기와 같은 문제점을 감안하여 안출한 본 발명의 목적은 웨이퍼와의 접촉면적을 최소화하여 이물발생을 감소시킴과 아울러 웨이퍼의 크기에 관계없이 안정적으로 현상작업을 실시할 수 있도록 하는데 적합한 반도체 웨이퍼 척을 제공함에 있다.The object of the present invention devised in view of the above problems is to minimize the contact area with the wafer to reduce the occurrence of foreign matters and to develop a semiconductor wafer chuck suitable for enabling stable development regardless of the size of the wafer. In providing.

도 1은 종래 반도체 웨이퍼 현상장치의 구성을 보인 종단면도.1 is a longitudinal sectional view showing a configuration of a conventional semiconductor wafer developing apparatus.

도 2는 종래 반도체 웨이퍼 현상장치의 동작을 보인 종단면도.Figure 2 is a longitudinal sectional view showing the operation of the conventional semiconductor wafer developing apparatus.

도 3은 본 발명의 반도체 웨이퍼 척의 일실시예를 보인 정면도.Figure 3 is a front view showing one embodiment of a semiconductor wafer chuck of the present invention.

도 4는 본 발명의 반도체 웨이퍼 척의 일실시예를 보인 평면도.Figure 4 is a plan view showing one embodiment of a semiconductor wafer chuck of the present invention.

도 5는 본 발명의 반도체 웨이퍼 척의 일실시예에 따른 동작을 보인 종단면도.5 is a longitudinal sectional view showing operation in accordance with one embodiment of the semiconductor wafer chuck of the present invention;

도 6은 본 발명의 다른 실시예를 보인 종단면도.Figure 6 is a longitudinal cross-sectional view showing another embodiment of the present invention.

도 7은 도 6의 A-A'를 절취하여 보인 단면도.FIG. 7 is a cross-sectional view taken along line AA ′ of FIG. 6;

* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings

12 : 웨이퍼 13 : 중앙흡착부12 wafer 13 central adsorption part

14 : 암부 15 : 외측흡착부14: arm 15: outer adsorption portion

20 : 길이조절수단20: length adjusting means

상기와 같은 본 발명의 목적을 달성하기 위하여 웨이퍼의 하면 중앙을 흡착지지하기 위한 중앙흡착부와, 그 중앙흡착부에 연결되도록 측방으로 설치되는 수개의 암부와, 그 암부의 단부에 각각 설치되어 웨이퍼의 하면 가장자리를 흡착지지하기 위한 외측흡착부를 구비하여서 구성되는 것을 특징으로 하는 반도체 웨이퍼 척이 제공된다.In order to achieve the object of the present invention as described above, the center adsorption portion for adsorbing and supporting the center of the lower surface of the wafer, several arm portions provided laterally to be connected to the center adsorption portion, and the end portions of the arm portions are respectively installed on the wafer Is provided with an outer side adsorption portion for adsorbing and supporting a bottom edge thereof.

이하, 상기와 같이 구성되어 있는 본 발명 반도체 웨이퍼 척을 첨부된 도면의 실시예를 참고하여 보다 상세히 설명하면 다음과 같다.Hereinafter, the semiconductor wafer chuck of the present invention configured as described above will be described in more detail with reference to embodiments of the accompanying drawings.

도 3은 본 발명의 반도체 웨이퍼 척의 일실시예를 보인 정면도이고, 도 4는 본 발명의 반도체 웨이퍼 척의 일실시예를 보인 평면도로서, 도시된 바와 같이, 본발명 반도체 웨이퍼 척은 회전축(11)에 연결되어 있으며, 웨이퍼(12)의 하면 중앙부를 흡착지지하기 위한 버큠홀(13a)이 구비되어 있는 중앙흡착부(13)와, 그 중앙흡착부(13)의 측면에 십자형(+)으로 연결설치되는 암부(14)와, 그 암부(14)의 단부에 각각 설치되며 버큠홀(15a)이 각각 구비되어 웨이퍼(12)의 하면 가장자리를 흡착지지하기 위한 외측흡착부(15)로 구성되어 있다.Figure 3 is a front view showing an embodiment of the semiconductor wafer chuck of the present invention, Figure 4 is a plan view showing an embodiment of the semiconductor wafer chuck of the present invention, as shown, the present invention semiconductor wafer chuck is a rotary shaft 11 Connected to each other, the center adsorption portion 13 having a suction hole 13a for adsorption support of the lower surface of the wafer 12, and a cross-shaped (+) connection on the side surface of the center adsorption portion 13; The arm 14 and the end of the arm 14 are provided, respectively, and a borehole 15a is provided, respectively, and is comprised by the outer side adsorption part 15 for adsorb | sucking and supporting the lower edge of the wafer 12. As shown in FIG.

상기와 같이 구성되어 있는 웨이퍼 척(16)이 설치되어 있는 현상장치에서 현상작업이 진행되는 동작을 도 5를 참고하여 설명하면 다음과 같다.Referring to FIG. 5, an operation in which the developing operation is performed in the developing apparatus in which the wafer chuck 16 configured as described above is performed is as follows.

먼저, 웨이퍼 척(16)의 상면에 웨이퍼(12)를 얹어 놓고, 그 웨이퍼 척(16)의 버큠홀(13a)(15a)들을 통하여 버큠을 발생시켜서 웨이퍼(12)가 중앙부와 가장자리가 웨이퍼 척(16)의 중앙흡착부(13)와 외측흡착부(15)에 흡착되도록 한다.First, the wafer 12 is placed on the upper surface of the wafer chuck 16, and the chuck is generated through the hole holes 13a and 15a of the wafer chuck 16 so that the wafer 12 has a center and an edge at the wafer chuck. It is made to adsorb | suck to the center adsorption part 13 and the outer side adsorption part 15 of (16).

그런 다음, 전원을 인가하여 모터(17)가 회전하면 회전축(11)이 회전되면서 웨이퍼 척(16)에 흡착된 웨이퍼(12)를 회전하게 되는데, 그 회전하는 웨이퍼(12)의 상면에 분사노즐(18)에서 현상액(19)을 분사하면 회전되는 웨이퍼(12)의 원심력에 의하여 웨이퍼(12)의 상면에 현상액(19)이 도포되면서 현상이 이루어진다.Then, when the motor 17 is rotated by applying power, the rotating shaft 11 is rotated to rotate the wafer 12 adsorbed on the wafer chuck 16, and the injection nozzle is disposed on the upper surface of the rotating wafer 12. When the developing solution 19 is injected at 18, the developing solution 19 is applied to the upper surface of the wafer 12 by the centrifugal force of the rotating wafer 12, thereby developing.

도 6은 본 발명의 다른 실시예를 보인 종단면도이고, 도 7은 도 6의 A-A'를 절취하여 보인 단면도로서, 도시된 바와 같이, 기본적인 구조는 도 3과 도 4의 일실시예와 동일하나, 다만 암부(14)의 일정부분에 각각 길이조절수단(20)이 구비되어 있어서 웨이퍼(12)의 크기에 따라 적절하게 암부(14)의 길이를 조절할 수 있도록 되어 있다.6 is a longitudinal cross-sectional view showing another embodiment of the present invention, Figure 7 is a cross-sectional view taken along the line AA 'of Figure 6, as shown, the basic structure of the embodiment of Figures 3 and 4 The same, but the length adjusting means 20 is provided in each of the arm portion 14, so that the length of the arm portion 14 can be adjusted appropriately according to the size of the wafer 12.

그 길이조절수단(20)은 상기 암부(14)를 직경이 큰 고정바(21)와 고정바(21)내에서 슬라이딩가능하도록 직경이 작게 형성된 조절부(22)의 2단으로 분리하고, 조절부(22)의 일정부분에 스프링(23)에 탄지되도록 설치된 고정볼(24)이 고정바(21)에 형성된 수개의 고정공(21a)들 중 선택적으로 삽입되면서 고정하여 웨이퍼(12)의 크기에 따라 암부(14)의 전체 길이를 조절할 수 있도록 되어 있다.The length adjusting means 20 separates the arm 14 into two stages of a fixed bar 21 having a large diameter and a control unit 22 having a small diameter so as to be slidable within the fixed bar 21. The fixing ball 24 installed to be supported by the spring 23 in a predetermined portion of the portion 22 is selectively inserted and fixed among the several fixing holes 21a formed in the fixing bar 21 to thereby fix the size of the wafer 12. According to this, the overall length of the arm portion 14 can be adjusted.

이상에서 상세히 설명한 바와 같이, 본 발명 반도체 웨이퍼 척은 웨이퍼의 척킹시 웨이퍼의 하면 중앙부와 측면 일정부분을 지지하도록 흡착하여, 종래와 같이 웨이퍼 척의 상면에 웨이퍼 하면 전체가 밀착되는 경우 보다 웨이퍼의 하면에 이물질이 발생되는 것을 감소시키는 효과가 있고, 그와 같이 웨이퍼의 하면 가장자리를 지지하는 암부의 길이를 조정할 수 있도록 되어 있어서, 1개의 장비에서 크기가 다른 여러 종류의 웨이퍼를 안정적으로 척킹할 수 있는 효과가 있다.As described in detail above, the semiconductor wafer chuck of the present invention is adsorbed so as to support a central portion of the lower surface of the wafer and a predetermined portion of the side surface when the wafer is chucked, and thus the entire lower surface of the wafer is in close contact with the upper surface of the wafer chuck as in the prior art. It has the effect of reducing the occurrence of foreign matters, and it is possible to adjust the length of the arm portion supporting the lower edge of the wafer as described above, so that it is possible to stably chuck various kinds of wafers of different sizes in one equipment. There is.

Claims (2)

웨이퍼의 하면 중앙을 흡착지지하기 위한 중앙흡착부와, 그 중앙흡착부에 연결되도록 측방으로 설치되는 수개의 암부와, 그 암부의 단부에 각각 설치되어 웨이퍼의 하면 가장자리를 흡착지지하기 위한 외측흡착부를 구비하여서 구성되는 것을 특징으로 하는 반도체 웨이퍼 척.A central adsorption portion for adsorbing and supporting the center of the lower surface of the wafer, several arm portions provided laterally to be connected to the central adsorption portion, and an outer side adsorption portion for adsorbing and supporting the lower edge of the wafer, respectively provided at the end of the arm portion The semiconductor wafer chuck characterized in that it comprises. 제 1항에 있어서, 상기 암부의 일정부분에 각각 길이조절수단이 구비되어 있는 것을 특징으로 하는 반도체 웨이퍼 척.The semiconductor wafer chuck according to claim 1, wherein a length adjusting means is provided at a predetermined portion of the arm portion.
KR1019990058552A 1999-12-17 1999-12-17 Semiconductor wafer chuck KR20010056886A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019990058552A KR20010056886A (en) 1999-12-17 1999-12-17 Semiconductor wafer chuck

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KR1019990058552A KR20010056886A (en) 1999-12-17 1999-12-17 Semiconductor wafer chuck

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