KR20010051595A - Getter, flat-panel display and method of production thereof - Google Patents

Abstract

PURPOSE: A manufacturing method of a flat display is provided to improve life time and image quality of the flat display by increasing gas absorption efficiency by a getter. CONSTITUTION: A flat display in which the first panel(P1) having a cold cathode electric field electron emission elements in an effective area and the second panel(P2) having a fluorescent material layer(21) and an anode electrode(22) in an effective area are arranged opposing to each other via a vacuum layer(VAC). The cold cathode electric field electron emission element comprises a cathode electrode(11) formed on a support(10), an insulation layer(12) formed on the cathode electrode(11) and the support(10), a gate electrode(13) formed on the insulation layer(12), an opening(14) passing trough the gate electrode(13) and the insulation layer(12), and an electron emitting part(15) formed on the cathode electrode(11) disposed at the bottom of the opening(14). The first panel(P1) is provided with a getter(43B) on the gate electrode(13).

Description

Method for manufacturing getter, flat panel display and flat panel display {GETTER, FLAT-PANEL DISPLAY AND METHOD OF PRODUCTION THEREOF}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a getter, a flat panel display, and a flat panel display, particularly a getter having improved gas trapping efficiency, a flat display having a long life and high image quality having such a getter, And a method for easily manufacturing such a flat panel display.

In the field of display devices used in television receivers and information terminal devices, the transition from the conventional mainstream cathode ray tube (CRT) to flat display devices that can meet the needs of thinner, lighter, larger screens and higher definitions It is considered. In one type of flat panel display, a flat panel display of a type in which two panels face each other with a vacuum layer interposed therebetween, such as a cold cathode field emission display (FED), is known. In this cold cathode field emission display device (hereinafter sometimes referred to simply as a "display device"), for example, a high electric field is formed at the tip of a needle-shaped conductor material or a semiconductor material. Once formed, electrons pass through the potential barrier in the conductor material or semiconductor material by the quantum tunnel effect and are emitted from the tip even at room temperature. This phenomenon may be called "field emission" or "cold-cathode emission."

The conceptual diagram which disassembled the display apparatus is shown in FIG. In this display device, a first panel P ₁ (display panel) and a second panel P ₂ are disposed to face each other with a vacuum layer interposed therebetween, and the first panel P ₁ and the second panel P _{2 are} disposed to face each other. ) Is bonded through the frame 24 at the periphery. In FIG. 66, the junction part was shown by hatching. Each of the first panel P1 and the second panel P2 has pixels arranged so that the effective areas EF ₁ and EF ₂ (displayed by hatching) and function as actual display screens, and the effective areas EF ₁ , The invalid areas NE ₁ and NE ₂ , which surround the EF ₂ ) and are formed with peripheral circuits for selecting pixels, are distinguished in function. In such a display device, in order to maintain the vacuum degree of the vacuum layer, a getter 642 made of a material capable of capturing the residual gas in the vacuum layer is disposed. The getter 642 is normally disposed in at least one invalid region of the two panels P ₁ and P ₂ . In the illustrated example, one or a plurality of through holes 640 are formed in the invalid region NF ₁ of the first panel P ₁ , and the through holes 640 are formed outside the first panel P ₁ . The getter 642 is accommodated in the getter box 641 which is arranged to be blocked from being blocked. Then, the other parts of the invalid area (NE ₁₎ may have other through-hole 616 for vacuum exhaust is formed, the through-holes 616 are connected to the tipgwan 617 are opened after the vacuum evacuation.

In FIG. 67, as an example of such a display device, a plurality of cold cathode field emission devices (hereinafter referred to as "electron emitting devices") are provided in the effective area EF ₁ of the first panel P ₁ (also referred to as "cathode panels"). An example of the configuration of a display device in which electron emission regions composed of "" are arranged is shown in a schematic partial cross-sectional view.

The illustrated electron-emitting device is an electron-emitting device of a type called a so-called Spindt-type electron-emitting device having a conical electron-emitting portion. The electron-emitting device includes a support 610, a cathode electrode 611 formed on the support 610, an insulation layer 612 formed on the support 610 and the cathode electrode 611, and an insulation layer 612. A gate electrode 613 formed in the gate electrode, an opening 614 formed in the gate electrode 613 and the insulating layer 612, and a conical electron emission part formed on the cathode electrode 611 located at the bottom of the opening 614. 615 is comprised. In general, a stripe conductive material layer constituting the cathode electrode 611 (referred to as a "conductive material layer for cathode electrodes") and a stripe conductive material layer constituting the gate electrode 613 ("for gate electrodes"). Conductive material layer " is formed in a direction in which the projected images of these conductive material layers are orthogonal to each other, and corresponds to an area corresponding to a region where the projected images of these striped conductive material layers overlap. In the electron emission region, a plurality of electron-emitting devices are usually arranged. In addition, these electron emission regions are normally arranged in a two-dimensional matrix in the effective region EF ₁ of the first panel P ₁ .

On the other hand, the second panel P ₂ (also referred to as an “anode panel”) is formed of the substrate 20 and the phosphor layer 21 (phosphor layers 21R, 21G, 21B) formed in accordance with a predetermined pattern on the substrate 20. ) And the anode electrode 23 formed over the entire surface on the phosphor layer 21. The black matrix 22 is formed on the substrate 20 between the phosphor layers 21.

A relative negative voltage is applied from the control circuit 30 to the cathode electrode 611, a relative positive voltage is applied from the scan circuit 31 to the gate electrode 613, and a gate electrode 613 is applied to the anode electrode 23. Even higher positive voltages are applied from the acceleration power supply 32. When displaying in such a display device, a control signal (video signal) is input from the control circuit 30 to the cathode electrode 611, and a scan signal is input from the scanning circuit 31 to the gate electrode 613. By an electric field generated when a voltage is applied between the cathode electrode 611 and the gate electrode 613, electrons are emitted from the electron emission section 615, and the electrons are attracted to the anode electrode 23 to form a phosphor layer. It collides with (21). As a result, the phosphor layer 21 is excited to emit light, thereby obtaining a desired image. That is, the operation of the display device is basically controlled by the voltage applied to the gate electrode 613 and the voltage applied to the electron emission unit 615 through the cathode electrode 611.

By the way, in the display device provided with the electron-emitting device as described above, when electrons are irradiated to the phosphor layer 21, water and carbon dioxide trapped on the surface or inside of the phosphor layer 21 obtain energy, It is detached or released into the vacuum layer in the form as it is or in the form of decomposition products such as carbon monoxide, oxygen and hydrogen. In this way, all of the gases that are released or released into the vacuum layer are collectively referred to as "emission gases" for convenience. When the emission gas is adsorbed on the surface of the electron emission section 615, or the adsorbed emission gas is detached from the surface of the electron emission section 615 again, the function of work of the electron emission section 615 changes at that time, This causes the noise caused by the variation of the emission electron current. For example, when oxygen gas is adsorbed on the surface of the electron emitting portion 615 made of tungsten, it is known that a function of work on the surface of the electron emitting portion 615 increases by about 1 to 2 eV. Density will fall to about 10%-1% at normal time. When the discharge gas is ionized to generate positive ions in the vacuum layer, the positive ions are directed to the electron emission unit 615 by the positive voltage applied to the anode electrode 23 through the acceleration power supply 32. Acceleration causes the electron emission portion 615 to be stuttered, which causes deterioration.

The positive ions or electrons may also enter the gate electrode 613 and the insulating layer 612 located in the vicinity of the electron emission unit 615. As a result, water, carbon dioxide, or the like adsorbed or occluded on the gate electrode 613 or the insulating layer 612 is desorbed or released, temporarily deteriorating the degree of vacuum near the electron emitting portion 615 ( That is, the pressure rises, and a local discharge may occur between the gate electrode 613 and the electron emission part 615. Once the local discharge occurs, the sputter of the constituent material present near the electron emission section 615, the temperature rise of the constituent material, and further generation of the emission gas proceed in series, and the discharge is amplified. The emitter 615 is damaged and electron emission is impossible. As a result, the lifetime of the display device is deteriorated.

The above getter 642 is formed as a countermeasure for avoiding such a problem due to the discharged gas. The getter 642 is made of a chemically highly active material such as barium, magnesium, zirconium, or titanium, and traps gas until an equilibrium state is achieved according to the partial pressure of the released gas in the atmosphere. Furthermore, since the gas molecules once trapped diffuse into the getter 642 and form a solid solution together with the constituent material, they are not normally discharged again.

Although the getter 642 has excellent gas trapping performance as described above, since it is formed in the invalid area of the conventional display device, it is difficult to say that the gas trapping performance is effectively exhibited for all the electron-emitting devices in the effective area. That is, except for some of the electron-emitting devices in the vicinity of the getter 642, most of the electron-emitting devices, even if the pressure rises by the emission gas in the vicinity of the electron-emitting section 615, the getter ( The capture of the discharged gas by 642) cannot be expected, and therefore, it is difficult to effectively prevent local discharge.

FIG. 68 schematically shows an example of pressure distribution in the vacuum layer when gas molecules are released from the electron emission section 615. For example, if the gas molecules are emitted from the gate electrode 613, the insulating layer 612, or the like at an arbitrary position D near the electron emission unit 615 in the vacuum layer, the gas molecules are released (D). ) May locally rise to, for example, about 1 Pa, resulting in discharge. At this time, if the position D is in the vicinity of the getter box 641, an increase in pressure and discharge in the vacuum layer can be prevented by the gas trapping action by the ketter 642. However, as shown in FIG. 68, when gas molecules are released at the position D away from the getter box 641, the gas trapping action by the getter 642 is small, so that discharge and discharge of gas molecules are chained. It is easy to become a vicious circle of enemies.

Accordingly, an object of the present invention is to provide a flat display device in which long life and high image quality can be achieved by efficient gettering, a method for easily manufacturing such a flat display device, and further, a getter having improved gas trapping efficiency.

1 (A), 1 (B) and 1 (C) are schematic diagrams showing an example of the configuration of the getter of the present invention.

2 (A), 2 (B) and 2 (C) are conceptual views showing an example of the configuration of the flat panel display device of the present invention.

3 (A), 3 (B), 3 (C) and 3 (D) are schematic cross-sectional views showing an example of the structure of a cathode field emission device which is a component of the flat panel display device according to the first configuration of the present invention. Iii).

4 (A), 4 (B) and 4 (C) are schematic cross-sectional views showing examples of the structure of the cathode field electron emission device which is a component of the flat panel display device according to the first configuration of the present invention.

5 (A) and 5 (B) are schematic partial cross-sectional views of a support body and the like for explaining a method for manufacturing a flat panel display device according to Embodiment 2 of the present invention.

6 (A) and 6 (B) are schematic partial cross-sectional views of a support body and the like for explaining the manufacturing method of the flat panel display device according to Embodiment 2 of the invention, following FIG. 5 (B).

7 (A) and 7 (B) are schematic partial cross-sectional views of a support body and the like for explaining the manufacturing method of the flat panel display device according to Embodiment 2 of the present invention, following Fig. 6B.

8 (A), 8 (B), 8 (C) and 8 (D) are schematic partial cross-sectional views of a substrate and the like for explaining an example of a method of manufacturing a second panel (anode panel).

9 is a schematic partial cross-sectional view of a flat panel display (cold cathode field emission display) according to Embodiment 2 of the present invention.

10 is a schematic conceptual perspective view illustrating an exploded view of the first panel and the second panel of the flat panel display according to Embodiment 2 of the present invention.

11 is a schematic exploded perspective view of a part of a first panel and a second panel of the flat panel display according to Embodiment 2 of the present invention.

12 (A) and 12 (B) are schematic partial cross-sectional views of a support body and the like for explaining a method for manufacturing a cathode field emission device that is a component of a flat panel display device according to Embodiment 6 of the invention.

13 (A) and 13 (B) are schematic partial cross-sectional views of a support body and the like for explaining the manufacturing method of the flat panel display device according to Embodiment 6 of the present invention, following Fig. 12B.

14 (A) and 14 (B) are schematic partial cross-sectional views of a support body and the like for explaining a method for manufacturing a flat panel display device according to Embodiment 7 of the invention.

15 (A), 15 (B) and 15 (C) are schematic partial cross-sectional views showing a formation pattern of a getter in Embodiment 7 of the present invention.

16 (A) and 16 (B) are schematic partial cross-sectional views of a support body and the like for explaining a method for manufacturing a flat panel display device according to Embodiment 8 of the present invention.

17 (A), 17 (B) and 17 (C) are schematic partial cross-sectional views showing a formation pattern of a getter in Embodiment 10 of the present invention.

18A and 18B are schematic partial cross-sectional views of a support body and the like for explaining a method for manufacturing a flat panel display device according to Embodiment 9 of the present invention.

19 (A) and 19 (B) are schematic cross-sectional views showing enlarged modifications of the electron emission section constituting the flat panel display device according to Embodiment 9 of the present invention.

20 (A), 20 (B) and 20 (C) are schematic cross-sectional views enlarging a modification of the electron emission unit constituting the flat display device according to Embodiment 9 of the present invention.

21 (A), 21 (B) and 21 (C) are schematic diagrams showing an example of the pressure fraction of the vacuum layer in the flat display device according to Embodiment 9 of the present invention.

22 (A) and 22 (B) are schematic partial cross-sectional views of a support body and the like for explaining a method for manufacturing a flat panel display device according to Embodiment 10 of the present invention.

FIG. 23 is a schematic partial cross-sectional view of a support body and the like for explaining the method for manufacturing an electron-emitting device in the flat display device according to Embodiment 11 of the present invention.

Fig. 24 is a characteristic diagram showing the relationship between the temperature of the zirconium-aluminum alloy and the vacuum exhaust velocity of the internal space in the flat display device.

FIG. 25A is a schematic partial cross-sectional view of a support body and the like for explaining a method of manufacturing an electron-emitting device in the flat panel display according to Embodiment 12 of the invention, and FIG. 25B is a schematic layout view of a gate electrode or the like. .

26 (A), 26 (B), 26 (C) and 26 (D) are schematic plan views showing a plurality of openings of the gate electrode.

27A and 27B are schematic partial cross-sectional views of a support body and the like for explaining a method for manufacturing a crown type electron emitting device in the flat display device according to Embodiment 13 of the present invention.

28 (A), 28 (B) and 28 (C) continue to FIG. 27 (B), and a support for explaining a method of manufacturing a crown electron-emitting device in the flat display device according to Embodiment 13 of the present invention. Some cross-sectional schematic views.

FIG. 29 (A) is a schematic partial cross-sectional view of the support body and the like following FIG. 28 (B), and FIG. 29 (B) explains a method of manufacturing a crown type electron-emitting device in the flat panel display according to Embodiment 13. FIG. It is a partial perspective view of the support body etc. for following.

30A, 30B, and 30C are schematic partial cross-sectional views of a support body and the like for explaining a method for manufacturing a flat electron emission device in a flat display device according to Embodiment 14 of the present invention.

31A, 31B, and 31C are schematic partial cross-sectional views of a support body and the like for explaining a method for manufacturing a flat electron emission device in a flat panel display device according to Embodiment 15 of the present invention.

32 (A) and 32 (B) are schematic partial cross-sectional views of the planar electron emitting device in the flat panel display according to Embodiment 16 of the present invention.

33 is a schematic partial sectional view of a modification of the planar electron emitting device in the flat panel display according to Embodiment 16 of the present invention.

34A and 34B are schematic partial cross-sectional views and a partial perspective view of a support body and the like for explaining a method for manufacturing a crater type electron-emitting device in the flat display device according to Embodiment 17 of the present invention.

35 (A) and 35 (B) are supports for explaining a method for manufacturing a crater type electron-emitting device in the flat panel display device according to Embodiment 17 of the present invention, following FIGS. 34 (A) and 34 (B). Some cross-sectional schematic views, and partial perspective views.

36 (A) and 36 (B) continue to FIGS. 35A and 35B to support a method for manufacturing a crater type electron-emitting device in the flat panel display according to Embodiment 17 of the present invention. Some cross-sectional schematic views, and partial perspective views.

37 (A) and 37 (B) are supports for explaining a method for manufacturing a crater type electron-emitting device in the flat panel display according to Embodiment 17 of the present invention, following FIGS. 36A and 36B. Some cross-sectional schematic views.

38A, 38B, and 38C are schematic partial cross-sectional views of a support body and the like for explaining a method for manufacturing a crater type electron-emitting device in the flat display device according to Embodiment 18 of the present invention.

39A, 39B, and 39C are schematic partial cross-sectional views of a support body and the like for explaining a method for manufacturing a crater type electron-emitting device in the flat display device according to Embodiment 19 of the present invention.

40 (A) and 40 (B) are schematic partial cross-sectional views of a support and the like for explaining a method for manufacturing a crater type electron-emitting device in the flat panel display according to Embodiment 20 of the present invention.

41 (A) and 41 (B) are schematic partial cross-sectional views of a support or the like for explaining the method for manufacturing a crater type electron-emitting device, continuing from FIG. 40 (B).

42 (A), 42 (B) and 42 (C) are schematic partial cross-sectional views of the crater type electron-emitting device in the flat display device according to Embodiment 21 of the present invention.

43 (A), 43 (B) and 43 (C) are schematic partial cross-sectional views of a support and the like for explaining a method of manufacturing an edge-type electron emitting device.

44A and 44B are schematic views of a support body and the like for explaining the manufacturing method of the spin-type electron-emitting device shown in FIG. 47 in the flat display device according to Embodiment 22 of the present invention. Some cross section.

45 (A) and 45 (B) are schematic partial cross-sectional views of a support body and the like for explaining the method for manufacturing the spin type electron-emitting device shown in FIG. 47 following FIG. 44 (B).

46 (A) and 46 (B) are schematic partial cross-sectional views of a support body and the like for explaining the method for manufacturing the spin type electron-emitting device shown in FIG. 47 following FIG. 45 (B).

47 is a schematic partial cross-sectional view of a spin type electron-emitting device.

48 (A) and 48 (B) are diagrams for explaining the mechanism in which the cone-shaped electron emitter is formed.

49 (A), 49 (B) and 49 (C) are diagrams schematically showing the relationship between the large resist selectivity, the height and the shape of the electron emitting portion.

50A and 50B are schematic partial cross-sectional views of a support and the like for explaining a method for manufacturing a spin type electron-emitting device in the flat panel display according to Embodiment 23 of the present invention.

51 (A) and 51 (B) are schematic partial cross-sectional views of a support body and the like for explaining the method for manufacturing the spin type electron-emitting device, continuing from FIG. 50 (B).

52 (A) and 52 (B) are schematic partial cross-sectional views of a support body and the like for explaining the method for manufacturing the spin type electron-emitting device, continuing from FIG. 51 (B).

53 (A) and 53 (B) are diagrams showing how the surface profile of an object to be etched changes every fixed time.

54A and 54B are schematic partial cross-sectional views of a support and the like for explaining a method for manufacturing a spin type electron-emitting device in the flat panel display according to Embodiment 24 of the present invention.

FIG. 55 is a schematic partial cross-sectional view of a support body or the like for explaining the method for manufacturing the spin type electron-emitting device in the flat panel display according to Embodiment 24 of the present invention (54).

56 is a schematic partial cross-sectional view of a spin type electron-emitting device in the flat panel display according to Embodiment 25 of the present invention.

57 (A) and 57 (B) are schematic partial cross-sectional views of a support body and the like for explaining the method for manufacturing the spin type electron-emitting device of Embodiment 25. FIG.

58 (A) and 58 (B) are schematic parts of a support body and the like for explaining a method for manufacturing a spin type electron-emitting device in the flat panel display device according to Embodiment 25 of the present invention, following Fig. 57 (B). It is a cross section.

59 (A) and 59 (B) are schematic parts of a support body and the like for explaining a method for manufacturing a spin type electron-emitting device in the flat panel display device according to Embodiment 25 of the present invention, following Fig. 58 (B). It is a cross section.

60A and 60B are schematic partial cross-sectional views of a support body and the like for explaining a method for manufacturing a spin type electron-emitting device in the flat panel display according to Embodiment 26 of the present invention.

61 (A) and 61 (B) are schematic parts of a support body and the like for explaining a method for manufacturing a spin type electron-emitting device in the flat panel display device according to Embodiment 26 of the present invention, following Fig. 60 (B). It is a cross section.

FIG. 62 is a schematic partial cross-sectional view of a support body and the like for explaining the method for manufacturing the spin type electron-emitting device in the flat display device according to Embodiment 27 of the present invention.

FIG. 63 is a view showing an example of a driving circuit of a flat panel display device in the case where all the gate electrodes are composed of one flat plate (sheet) electrode component layer.

64 is a view showing an example of a driving circuit of a flat panel display device in the case where all the gate electrodes are configured by one flat plate (sheet) electrode constituent layer.

65 is a schematic partial cross-sectional view of a flat panel display device in which a converging electrode is formed through a vacuum layer above the gate electrode.

66 is a conceptual diagram illustrating a conventional flat display device.

FIG. 67 is a conceptual layout view of each component of the conventional first panel shown in FIG. 66.

FIG. 68 is a view schematically showing an example of pressure distribution in a vacuum layer when gas molecules are emitted from an electron emission section in a conventional flat panel display.

A getter of the present invention for achieving the above object is formed on a substrate, has a concave-convex (or rough, uneven or irregular) surface, or a support member made of a porous body, and a support And a gas trapping layer formed on the support member along the surface of the member.

In the getter of the present invention, since the gas trapping layer is formed on the support member along the surface of the support member, the surface area of the gas trapping layer is increased as compared with the case where the surface of the gas trapping layer is flat, and thus exists in the external environment. High probability of contact with gas. When the getter of the present invention is applied to the flat display device of the present invention described below, the external environment corresponds to a vacuum layer, and the gas corresponds to a discharge gas emitted from an internal structural member facing the vacuum layer. That is, the getter of the present invention is excellent in gas trapping efficiency as compared with the conventional getter, and can maintain a high degree of vacuum over a long period of time. Here, "acquisition" includes absorption, adsorption, storage, and sorption. In the getter of the present invention, the base is not particularly limited as long as the base can mechanically and stably support the support member.

According to one or more embodiments of the present invention, a flat panel display device includes an effective area in which a first panel and a second panel are disposed to face each other with a vacuum layer interposed therebetween, and have pixels arranged therein, and the first panel and the second panel. A getter for maintaining the degree of vacuum of the vacuum layer is formed in at least one effective region of.

In a specific configuration of the flat panel display device of the present invention, the first panel includes a cold cathode field emission device in the effective area, and the second panel includes an anode electrode and a phosphor layer in the effective area, and emits cold cathode field electrons. The device is,

(A) an insulating layer formed on the support,

(B) a gate electrode formed on the insulating layer,

(C) an opening penetrating the gate electrode and formed in the insulating layer, and

(D) an electron emission portion formed in the opening

Made up of

The getter is preferably formed on an insulating layer between the gate electrode and / or between adjacent gate electrodes. A flat panel display having such a configuration is called a flat panel display according to the first configuration of the present invention. The flat panel display according to the first aspect of the present invention is a so-called cold cathode field emission display.

In another specific configuration of the flat panel display device of the present invention, the first panel includes a cold cathode field emission device in the effective region, and the second panel includes an anode electrode and a phosphor layer in the effective region, and the cold cathode. The field electron emission device

(A) an insulating layer formed on the support,

(B) a gate electrode formed on the insulating layer,

(C) a second insulating layer formed on the gate electrode and the insulating layer,

(D) a converging electrode formed on the second insulating layer,

(E) an opening penetrating through the converging electrode, the second insulating layer and the gate electrode, and formed in the insulating layer,

(F) an electron emission portion formed in the opening

Made up of

The getter is preferably formed on the second insulating layer between the convergence electrode and / or between adjacent convergence electrodes. A flat panel display having such a configuration is referred to as "a flat panel display according to the second configuration of the present invention". A flat panel display according to a second aspect of the present invention is a cold cathode field emission display having a condensation electrode.

Here, the converging electrode is an electrode for converging the trajectory of the emission electrons emitted from the opening toward the anode, thereby enabling improvement of luminance and prevention of optical crosstalk between adjacent pixels, and between the anode electrode and the cathode electrode. The potential difference of is a few kilovolt order, and is a particularly effective member when a so-called high voltage type flat panel display device having a relatively long distance between the first panel and the second panel is assumed. A relative negative voltage is applied to the convergence electrode from the convergence power supply. The converging electrode does not necessarily need to be formed for each cold cathode field emission device, and is common to a plurality of cold cathode field emission devices by extending along a predetermined arrangement direction of the cold cathode field emission device. It may have a procedure effect.

In the flat display device according to the first or second aspect of the present invention, the getter comprises a support member having irregularities on the surface or made of a porous body, and a gas trapping layer formed on the support member along the surface of the support member. Preferably, the support member is formed on the insulating layer between the gate electrode and / or adjacent gate electrode, or on the second insulating layer on the convergence electrode and / or adjacent converging electrode.

In another specific configuration of the flat panel display device of the present invention, the first panel includes a cold cathode field emission device in the effective region, and the second panel includes an anode electrode and a phosphor layer in the effective region, and the cold cathode. The field electron emission device

(A) an insulating layer formed on the support,

(B) a gate electrode formed on the insulating layer, at least a portion of which is made of a gas trapping material,

(C) an opening penetrating the gate electrode and formed in the insulating layer, and

(D) an electron emission portion formed in the opening

Made up of

Preferably, the gate electrode functions as the getter. A flat panel display having such a configuration is referred to as a " flat display device according to the third configuration of the present invention. &Quot; The flat panel display according to the third aspect of the present invention is a cold cathode field emission display.

In the flat panel display according to the third aspect of the present invention, the gate electrode may have a single layer structure made of a gas trapping material, or the gate electrode may include at least a first layer made of a conductive material or an insulating material, and a gas. It can be set as the structure which has a laminated structure of the 2nd layer which consists of a capture | acquisition material.

In another specific configuration of the flat panel display device of the present invention, the first panel includes a cold cathode field emission device in the effective region, and the second panel includes an anode electrode and a phosphor layer in the effective region, and the cold cathode. The field electron emission device

(A) an insulating layer formed on the support,

(B) a gate electrode formed on the insulating layer,

(C) a second insulating layer formed on the gate electrode and the insulating layer,

(D) a converging electrode formed on the second insulating layer, the at least part of which is made of a gas trapping material,

(E) an opening penetrating through the converging electrode, the second insulating layer and the gate electrode, and formed in the insulating layer,

(F) an electron emission portion formed in the opening

Made up of

It is preferable that the converging electrode functions as the getter. A flat panel display having such a configuration is referred to as "a flat panel display according to the fourth configuration of the present invention". A flat panel display device according to a fourth aspect of the present invention is a cold cathode field emission display device having a convergence electrode.

In the flat display device according to the fourth aspect of the present invention, the converging electrode can be configured to have a single layer structure made of a gas trapping material, or the converging electrode has at least a first layer made of a conductive material or an insulating material, and a gas. It can be set as the structure which has a laminated structure with the 2nd layer which consists of a capture material.

In another specific configuration of the flat panel display device of the present invention, the first panel includes a cold cathode field emission device in the effective area, and the second panel includes an anode electrode and a phosphor layer in the effective area, and the cold cathode field. The electron emitting device,

(A) a spacer made of an insulating material disposed on a support,

(B) a gate electrode formed of a gas trapping material layer in which a plurality of openings are formed, and at least part of which is made of a gas trapping material, and

(C) an electron emission portion formed on the support

Made up of

It is preferable that the gas trapping material layer is fixed so as to be in contact with the top surface of the spacer and the opening is located above the electron emission section. A flat panel display having such a configuration is referred to as "a flat panel display according to a fifth configuration of the present invention". The flat panel display according to the fifth aspect of the present invention is a cold cathode field emission display.

In the flat display device according to the first to fifth configurations, the first panel may be referred to as a cathode panel, and the second panel may be referred to as an anode panel. In the planar display device according to the first and second configurations, an insulating layer between a gate electrode and / or an adjacent gate electrode, or a second insulating layer between a convergence electrode and / or an adjacent convergence electrode is applied to a substrate. It is considerable.

The manufacturing method of the flat panel display of the present invention for achieving the above object is a method for manufacturing the flat type marketer of the present invention. That is, the first and second panels having an effective area in which pixels are arranged are disposed to face each other with a vacuum layer interposed therebetween, and the first and second panels are bonded to each other at a peripheral portion thereof. And forming a getter in at least one effective region of the first panel and the second panel.

In a specific configuration of a method for manufacturing a flat panel display device of the present invention, the first panel includes a cold cathode field emission device in the effective region, the second panel includes an anode electrode and a phosphor layer in the effective region, and the first panel includes: Panel

(a) forming an insulating layer on a support,

(b) forming a conductive material layer for forming a gate electrode on the insulating layer,

(c) forming a getter forming layer on the conductive material layer,

(d) forming a gate electrode with a getter formed on the upper surface by patterning the getter formation layer and the conductive material layer;

(e) forming openings in at least an insulating layer, and

(f) It can form through the process of forming an electron emission part in an opening part, or exposing it. The manufacturing method of the flat panel display device having such a configuration is called a manufacturing method according to the first configuration of the present invention. By the manufacturing method according to the first aspect of the present invention, the flat panel display device according to the first aspect of the present invention can be manufactured, and the gate electrode and the getter are formed in the same pattern by simultaneous patterning.

In the manufacturing method according to the first aspect of the present invention, the step of forming the getter forming layer of step (c) includes (1) a support member having irregularities on the surface or made of a porous body on the conductive material layer for forming a gate electrode. And a step of forming the gas trapping layer along the surface of the support member on the support member.

In another specific configuration of the method for manufacturing a flat panel display device of the present invention, the first panel includes a cold cathode field emission device in the effective region, the second panel includes an anode electrode and a phosphor layer in the effective region, and the first panel includes: Panel

(a) forming an insulating layer on a support,

(b) forming a gate electrode on the insulating layer,

(c) forming a second insulating layer on the insulating layer and the gate electrode;

(d) forming a conductive material layer for forming a converging electrode on the second insulating layer,

(e) forming a getter forming layer on the conductive material layer,

(f) process of forming a convergent electrode in which a getter was formed in the upper surface by patterning a getter formation layer and a conductive material layer,

(g) forming openings in at least the second insulating layer and the insulating layer, and

(h) It can form through the process of forming an electron emission part in an opening part, or exposing it. The manufacturing method of the flat panel display device having such a configuration is called a manufacturing method according to the second configuration of the present invention. By the manufacturing method according to the second aspect of the present invention, the flat panel display device according to the second aspect of the present invention can be manufactured, and the convergence electrode and the getter are formed in the same pattern by simultaneous patterning.

In the manufacturing method according to the second aspect of the present invention, the step of forming the getter forming layer of step (e) includes (1) a conductive material layer for converging electrode formation, wherein the support member has irregularities on the surface or is made of a porous body. It is preferable that the step of forming a phase and (2) forming the gas trapping layer along the surface of the supporting member on the supporting member.

In another specific configuration of the method for manufacturing a flat panel display device of the present invention, the first panel includes a cold cathode field emission device in the effective region, and the second panel includes an anode electrode and a phosphor layer in the effective region. 1 panel

(a) forming an insulating layer on a support,

(b) forming a gate electrode on the insulating layer,

(c) forming a getter on the gate electrode and / or on an insulating layer between adjacent gate electrodes,

(d) forming openings in at least the insulating layer, and

(e) It can form through the process of forming an electron emission part in an opening part, or exposing it. The manufacturing method of the flat panel display device having such a configuration is called a manufacturing method according to the third configuration of the present invention. By the manufacturing method according to the third aspect of the present invention, the flat panel display device according to the first aspect of the present invention can be manufactured, and the gate electrode and the getter are formed by different processes.

In the manufacturing method according to the third aspect of the present invention, the step of forming the getter of the step (c) includes (1) a gate having unevenness on the surface or having a support member made of a porous body on and / or adjacent to the gate electrode; It is preferable to comprise the process of forming on the insulating layer between electrodes, and (2) the process of forming the gas trapping layer along the surface of a support member on a support member.

In another specific configuration of the method for manufacturing a flat panel display device of the present invention, the first panel includes a cold cathode field emission device in the effective region, the second panel includes an anode electrode and a phosphor layer in the effective region, The first panel

(a) forming an insulating layer on a support,

(b) forming a gate electrode on the insulating layer,

(c) forming a second insulating layer on the insulating layer and the gate electrode;

(d) forming a converging electrode on the second insulating layer,

(e) forming a getter on the convergence electrode and / or on the second insulating layer between adjacent convergence electrodes,

(f) forming openings in at least the second insulating layer and the insulating layer, and

(g) It can form through the process which forms an electron emission part in an opening part, or exposes. The manufacturing method of the flat panel display device having such a configuration is called a manufacturing method according to the fourth configuration of the present invention. By the manufacturing method according to the fourth aspect of the present invention, the flat panel display device according to the second aspect of the present invention can be manufactured, and the convergence electrode and the getter are formed by different processes.

In the manufacturing method according to the fourth aspect of the present invention, the step of forming the getter of the step (e) includes (1) a procedure in which a support member having unevenness on the surface or made of a porous body is formed on the convergence electrode and / or adjacent to the convergence electrode; It is preferable that the step of forming the second insulating layer between the electrodes and (2) forming the gas trapping layer along the surface of the supporting member on the supporting member. Except in the case where the getter is formed on the entire surface, after the step (2), the support member and the gas trapping layer may be patterned as necessary to complete the getter.

In another specific configuration of the method for manufacturing a flat panel display device of the present invention, the first panel includes a cold cathode field emission device in the effective region, the second panel includes an anode electrode and a phosphor layer in the effective region, The first panel

(a) forming an insulating layer on a support,

(b) forming a gate electrode at least partially formed of a gas trapping material on the insulating layer, and functioning as a getter;

(c) forming an opening in at least an insulating layer, and

(d) It can form through the process of forming an electron emission part in an opening part, or exposing it. The manufacturing method of the flat panel display device having such a configuration is called a manufacturing method according to the fifth configuration of the present invention. By the manufacturing method which concerns on the 5th structure of this invention, the flat panel display device which concerns on the 3rd structure of this invention can be manufactured.

In the manufacturing method according to the fifth aspect of the present invention, the gate electrode can be configured to have a single-layer structure made of a gas trapping material, or the gate electrode is at least a first layer made of a conductive material or an insulating material, and gas trapping. It can be set as the structure which has a laminated structure with the 2nd layer which consists of materials.

In another specific configuration of the method for manufacturing a flat panel display device of the present invention, the first panel includes a cold cathode field emission device in the effective region, the second panel includes an anode electrode and a phosphor layer in the effective region, The first panel

(a) forming an insulating layer on a support,

(b) forming a gate electrode on the insulating layer,

(c) forming a second insulating layer on the insulating layer and the gate electrode;

(d) forming a converging electrode at least partially formed of a gas trapping material on the second insulating layer and functioning as a getter;

(e) forming openings in at least the second insulating layer and the insulating layer, and

(f) It can form through the process of forming an electron emission part in an opening part, or exposing it. The manufacturing method of the flat panel display device having such a configuration is called a manufacturing method according to the sixth configuration of the present invention. By the manufacturing method which concerns on the 6th structure of this invention, the flat panel display device which concerns on the 4th structure of this invention can be manufactured.

In the manufacturing method according to the sixth aspect of the present invention, the converging electrode can be configured to have a single layer structure made of a gas capturing material, or the converging electrode has at least a first layer made of a conductive material or an insulating material, and gas capturing. It can be set as the structure which has a laminated structure with the 2nd layer which consists of materials.

In another specific configuration of the method for manufacturing a flat panel display device of the present invention, the first panel includes a cold cathode field emission device in the effective region, the second panel includes an anode electrode and a phosphor layer in the effective region, The first panel

(a) disposing a spacer made of an insulating material on the support, and forming an electron emission portion on the support;

(b) a plurality of openings are formed, and at least a portion thereof is formed through a process of fixing a gate electrode composed of a gas trapping material layer made of a gas trapping material to be in contact with the top surface of the spacer and to be positioned above the electron emission section. can do. The manufacturing method of the flat panel display device having such a configuration is called a manufacturing method according to the seventh configuration of the present invention. By the manufacturing method which concerns on the 7th structure of this invention, the flat display apparatus which concerns on the 3rd structure of this invention can be manufactured.

In the flat panel display according to the first aspect of the present invention and the manufacturing method according to the third aspect of the present invention, when the getter is formed on the gate electrode, the getter may have the same pattern as the gate electrode, You may base the pattern which coat | covers. When forming a getter on a gate electrode, the support member and the gas trapping layer may be made of either a conductive material or an insulating material. Moreover, when forming a getter on the insulating layer between adjacent gate electrodes, the getter may be formed in contact with the side surface of a gate electrode, and may be formed apart from the side surface of a gate electrode. However, when forming in contact with the side surface of the gate electrode, it is necessary to select the constituent materials of the support member and the gas trapping layer so that adjacent gate electrodes are not shorted by the getter. The getter need not necessarily be formed on the insulating layer between all adjacent gate electrodes. In addition, when the getter is formed on the insulating layer between the gate electrode and the adjacent gate electrode, the effective area of the getter (that is, the area of the part contributing to the capture of the discharged gas) can be secured the largest. This means that if at least the supporting member of the portion in contact with the gate electrode is made of an insulating material, even if the gas trapping layer is made of a conductive material, it is possible to form a getter on almost the entire surface of the effective region excluding the opening. Because.

Moreover, in the flat display device which concerns on the 2nd structure of this invention, and the manufacturing method which concerns on the 4th structure of this invention, when a getter is formed on a convergence electrode, a getter may have the same pattern as a convergence electrode, You may have a pattern which coats a convergence electrode. In the case where the getter is formed on the converging electrode, the support member and the gas trapping layer may be made of either a conductive material or an insulating material. When forming a getter on the 2nd insulating layer between adjacent convergence electrodes, the getter may be formed in contact with the side surface of a convergence electrode, and may be formed apart from the side surface of a convergence electrode. However, when formed in contact with the side surface of the convergence electrode, it is necessary to select the constituent material of the support member and the gas trapping layer so that adjacent convergence electrodes are not short-circuited by the getter. The getter need not necessarily be formed on the second insulating layer between all adjacent converging electrodes. In addition, when the getter is formed on the second insulating layer between the convergent electrode and the adjacent converging electrode, the effective area of the getter can be secured the largest. This is because, if at least the supporting member of the portion in contact with the converging electrode is made of an insulating material, even if the gas trapping layer is made of a conductive material, it is possible to form a getter on almost the entire area of the effective region excluding the opening.

In the flat display device according to the first and second configurations of the present invention and the manufacturing method according to the first to fourth configurations of the present invention, the getters in the effective region may be formed corresponding to each pixel. It may be formed corresponding to the predetermined number of pixel groups. When the getter is formed corresponding to each pixel, the getter may be formed so as to cover the entire area of the effective region. In the case where the getter is formed corresponding to a predetermined number of pixels, the arrangement of the getter in the effective area may be regular or random. In the flat display device according to the first and second configurations of the present invention and the manufacturing method according to the first to fourth configurations of the present invention, a getter in the effective area is formed corresponding to each electron-emitting device. Or may be formed corresponding to a predetermined number of electron-emitting devices. When the getter is formed corresponding to each electron-emitting device, the getter may be formed so as to cover the entire area of the effective region. When the getters are formed corresponding to a predetermined number of electron-emitting device groups, the getters in the effective area may be arranged regularly or randomly. In any case, it is preferable that the effective area of the getter is as large as possible and the regularity of the arrangement is as high as possible from the viewpoint of preventing local pressure rise of the vacuum layer by the discharged gas as much as possible. In the flat panel display device of the present invention and the flat panel display device according to the first and second configurations of the present invention, the gettering efficiency is lower than that of the conventional flat display device in which the getter is formed only at one position of the ineffective area. As the improvement, the lifespan and the image quality of the flat panel display device are greatly improved.

The planar display device according to the first to fifth aspects of the present invention can include all types of conventionally known cold cathode field emission devices, depending on the arrangement of the electron emission electrodes in the openings. For example, a structure is provided in which a cathode electrode is formed on the support, an insulating layer is formed on the cathode and the support, and the electron emission portion is formed on the cathode electrode located at the bottom of the opening. A cold cathode field emission device in which an electron emission portion is provided on a cathode electrode, the so-called spin type electron emission element having a conical electron emission portion, a so-called crown type electron emission element having a crown electron emission portion, and a flat electron emission portion So-called flat electron-emitting devices are mentioned. Alternatively, the electron emitting portion is formed on the support, the insulating layer is formed on the electron emitting layer and the support, and the electron emitting layer located at the bottom of the opening corresponds to the electron emitting portion (so-called planar electron emitting device or crater type electron). Emitting element).

When a flat display device including these spin type electron emitting devices, crown type electron emitting devices, or flat type electron emitting devices as a cold cathode field emission device is manufactured by the manufacturing method according to the first to sixth aspects of the present invention. In the step (a) of the manufacturing method according to the respective configurations, after forming the cathode on the support, an insulating layer is formed on the cathode and the support, and in the manufacturing method according to the first configuration, the step (f), Process (h) in the manufacturing method according to the second configuration, step (e) in the manufacturing method according to the third configuration, step (g) in the manufacturing method relating to the fourth cake, and step (d) in the manufacturing method according to the fifth configuration. In the manufacturing method according to the sixth writing, in the step (f), the electron emission portion may be formed on the cathode electrode located at the bottom of the opening. And the manufacturing process concerning the process (f) in the manufacturing method concerning a 1st structure, the process (h) in the manufacturing method concerning a 2nd structure, the process (e) in the manufacturing method concerning a 3rd structure, and a 4th structure The process (g) in a method, the process (d) in the manufacturing method which concerns on a 5th structure, and the process (f) in the manufacturing method which concerns on a 6th structure may be called an electron emission part formation process. In the case where a flat display device having a planar electron emitting device as a cold cathode field emission device is manufactured by the manufacturing method according to the first to sixth aspects of the present invention, the step (a) of the manufacturing method for each configuration WHEREIN: After forming an electron emission layer on a support body, an insulating layer is formed on an electron emission layer and a support body, and the electron emission layer located in the bottom part of an opening part in the electron emission part formation process of the manufacturing method which concerns on each structure is carried out. Is exposed, and therefore, the electron emission portion can be exposed in the opening.

Alternatively, in the flat display device according to the first to fifth aspects of the present invention, the insulating layer covers the electron emission layer, the opening passes through the electron emission layer, and the electron emission portion is exposed to the sidewall surface of the opening. You may consist of the edge part of the formed electron emission layer. As a cold cathode field emission device including an electron emission section in which an end portion of the electron emission layer is exposed on the sidewall surface of the opening, a so-called edge type electron emission device may be mentioned.

When a flat display device having an edge type electron emission device as a cold cathode field emission device is manufactured by the manufacturing method according to the first to sixth aspects of the present invention, the step (a) of the manufacturing method for each configuration WHEREIN: The insulating layer which coat | covered the electron emission layer is formed, and the electron emission part may be formed by exposing the edge part of an electron emission layer to the side wall surface of an opening part in the electron emission part formation process of the manufacturing method which concerns on each structure.

Here, the "insulating layer which coat | covered an electron emission layer" may coat | cover only the upper surface and side surface of an electron emission layer, and may cover the whole periphery (namely, upper surface, side surface, and bottom surface) of an electron emission layer. As an actual structure of the insulating layer which covers the whole periphery of an electron emission layer, the upper and lower two layer structure which consists of an upper insulating layer and a lower insulating layer is possible. For example, after forming a lower insulating layer, an electron emission layer may be formed on a lower insulating layer, and an upper insulating layer may be formed on an electron emission layer and a lower insulating layer. When the insulating layer covers only the upper and side surfaces of the electron emitting layer, the step (e) of the manufacturing method according to the first configuration, the step (g) of the manufacturing method according to the second configuration, and the manufacturing method according to the third configuration In the step (d), the step (f) of the manufacturing method according to the fourth constitution, and the step (d) in the manufacturing method according to the fifth constitution, the insulating layer and the electron emitting layer in step (f) in the manufacturing method according to the sixth constitution. If an opening is formed in the end portion, the end of the electron emission layer is exposed on the bottom sidewall surface of the opening. And manufacturing in the process (e) in the manufacturing method concerning a 1st structure, the process (g) in the manufacturing method concerning a 2nd structure, the process (d) in the manufacturing method concerning a 3rd structure, and a 4th structure In the manufacturing method according to the step (f) and the fifth configuration in the method, in the manufacturing method according to the step (d) and the sixth configuration, the step (f) may be referred to as an opening forming step. On the other hand, when the insulating layer covers the entire circumference of the electron emitting layer, when the opening is formed in the insulating layer in the opening forming step, the end of the electron emitting layer may be exposed on the bottom sidewall surface of the opening depending on the depth of the opening. By forming the opening deeper, the end portion of the electron emission layer can be exposed on the side wall surface of the middle portion of the opening in the depth direction. In the case where the insulating layer has a two-layer structure, the lower gate electrode may be previously formed below the lower insulating layer, and an opening in which the lower gate electrode is exposed at the bottom may be formed in the insulating layer.

In the step (e) of the manufacturing method according to the first configuration of the present invention, the step (d) of the manufacturing method according to the third configuration, and the manufacturing method according to the fifth configuration, in the step (c), the openings are "minimum" insulated. It is expressed in the layer that any through hole is formed in the getter or the gate electrode (in the case of forming an edge type electron emission device, an electron emission layer) in the previous process, and the insulating layer is formed inside the through hole. This is because the opening may be necessary only in some cases. In addition, in the step (e) of the manufacturing method according to the second configuration of the present invention, the step (f) of the manufacturing method according to the fourth configuration, and the manufacturing method according to the sixth configuration, in step (e), the opening is "minimum". What is said to be formed in the second insulating layer and the insulating layer is that some through-holes are formed in the getter, the convergence electrode or the gate electrode (in addition, in the case of forming the edge type electron-emitting device, in addition to the emission layer) in the process up to that point. This is because the opening may be formed only in the second insulating layer and the insulating layer inside the through hole. As a typical method of forming an opening in an insulating layer or a 2nd insulating layer, the etching using a mask pattern is mentioned.

The getter of the present invention, the flat panel display device of the present invention, the flat panel display device according to the first and second configurations of the present invention, the manufacturing method of the flat panel display device of the present invention, and the first to fourth configurations of the present invention. In the manufacturing method according to the present invention, as a method of forming a substantially hemispherical silicon particle, for example, in the field of manufacturing DRAM (dynamic random access memory), in order to enlarge the surface area of the capacitor lower electrode (memory node electrode), it is approximately hemispherical. The technique of growing the silicon particles of can be applied. The formation of substantially hemispherical silicon particles is generally performed by a two-step process of nucleation (seeding) and nucleus growth. In the nucleation step, a silicon nucleus is generally formed by a reduced pressure CVD method using a silane-based gas. The silicon nucleus forming portion is formed on the conductive material layer for forming the gate electrode in the manufacturing method according to the first configuration of the present invention, and on the conductive material layer for forming the convergence electrode in the manufacturing method according to the second configuration of the present invention. On the insulating layer between the gate electrode and / or adjacent gate electrodes in the manufacturing method according to the third configuration of the present invention, and on the convergence electrode and / or adjacent converging electrodes in the manufacturing method according to the fourth configuration of the present invention. 2 insulating layer phase, that is, gas phase. In the subsequent nucleus growth step, silicon atoms are attached to the silicon nuclei to anneal to grow into substantially hemispherical silicon particles.

The getter of the present invention, the flat panel display device of the present invention, the flat panel display device according to the first and second configurations of the present invention, the manufacturing method of the flat panel display device of the present invention, and the first to fourth configurations of the present invention. In the related production method, the support member made of substantially hemispherical silicon particles may be composed of an amorphous silicon layer formed on the lower side of the substantially hemispherical silicon particles (that is, on the opposite side to the side where the gas trapping layer is formed). In the manufacturing method of the flat display device of the present invention, in the case of forming such a supporting member, an amorphous silicon layer may be formed in advance on the above-described silicon nucleus forming portion before the formation of the substantially hemispherical silicon particles. The amorphous silicon layer can be formed by, for example, a reduced pressure CVD method. On the surface of the amorphous silicon layer, there is a Si-H bond in which a dangling bond (unsaturated bond) of silicon (Si) atoms is terminated by a hydrogen (H) atom. As a result of the substitution of the Si atoms, a silicon nucleus is easily formed.

Further, the getter of the present invention, the flat panel display device of the present invention, the flat panel display device according to the first and second configurations of the present invention, the method of manufacturing the flat panel display device of the present invention, and the first to fourth aspects of the present invention. In the manufacturing method which concerns on a structure, the support member may be comprised from the porous body. The support member made of a porous body may be composed of at least one material selected from the group consisting of silicon oxide, silicon nitride and silicon oxynitride. Silicon oxide contains silicon oxide (eg, BPSG) containing at least one element selected from the group consisting of xerogel, phosphorus (P), boron (B) and arsenic (As) having a low dielectric constant. , PSG, BSG, AsSG, PbSG).

In the manufacturing method of the flat display device of the present invention and the manufacturing method according to the first to fourth configurations of the present invention, the step of forming a supporting member made of a porous body comprises a pyrolysis machine (decomposition reaction is generated by the action of heat). And a step of forming a supporting member forming film containing a solvent, and a step of decomposing a pyrolysis machine or evaporating a solvent by heat treatment of the supporting member forming film. For example, a liquid composition obtained by dispersing a constituent material of the support member in a solvent may be prepared by a gas (insulation layer between the gate electrode and / or the adjacent gate electrode, or between the convergence electrode and / or the adjacent convergence electrode). (2 insulating layers) to form a support member formation film, and to form a hole by vaporizing a solvent contained in the support member formation film by heat treatment. Alternatively, when the support member is formed using a siloxane compound having a pyrolysis group such as a methyl group, the pyrolysis group is decomposed by heat treatment, and as a result, a hole can be formed.

Or in the manufacturing method of the flat-panel display apparatus of this invention, and the manufacturing method which concerns on the 1st-4th structure of this invention, the process of forming the support member which consists of a porous body contains several components from which an etching rate differs. The process of forming a support member forming film, the process of phase-separating a some component by the heat processing of a support member forming film, and the process of etching-removing the component with the quicker etching rate can be carried out. . The number of components having different etching rates is sufficient in practical use, but may be three or more. However, when the number of components is three or more, the number of phases generated by phase separation does not necessarily need to be the same as the number of components, and at least two phases may be generated. Specifically, a support member forming film is formed by using a borosilicate glass composition containing boron oxide (B ₂ O ₃ ) in an amount greater than or equal to a solid solution limit of silicon oxide (SiO ₂ ), and boron oxide is formed by heat treatment. Is agglomerated (phase-separated), and the aggregated boron oxide is etched using hot water to form holes in the sites where the boron oxide is aggregated.

Or in the manufacturing method of the flat-panel display apparatus of this invention, and the manufacturing method which concerns on the 1st-4th structure of this invention, the process of forming the support member which consists of a porous body contains several components from which an etching rate differs. It can be set as the structure which consists of a process of forming a support member formation film, and the process of carrying out the etching removal of the component with the quicker etching rate. The number of components having different etching rates is sufficient for practical use, but may be three or more. Specifically, for example, a support member forming film is formed using a silane derivative having two kinds of different organic side chains, and the support member forming film is vitrified by heat treatment, and a support member is used using a dilute hydrofluoric acid aqueous solution. When the formed film is etched, the portion of the support member forming film having relatively high solubility is first dissolved in accordance with the type of the organic side chain to form a hole.

In the flat display device according to the third to fifth configurations of the present invention, or a manufacturing method thereof (the manufacturing method of the flat display device according to the fifth to seventh configurations of the present invention), the gate electrode or the convergence electrode is a gas. It can also be set as the single layer structure which consists of a capture | acquisition material, or it can be set as the structure which has a laminated structure of the 1st layer which consists of a conductive material or an insulating material at least, and the 2nd layer (gas capture layer) which consists of a gas capture material. In the latter case, more specifically, a laminated structure of at least a first layer made of a conductive material and a second layer made of a gas trapping material, a first layer made of at least an insulating material, and a gas trapping material having conductivity. It can also be set as the laminated structure with a 2nd layer (gas trapping layer). In some cases, a lamination structure of a first layer made of a conductive material, a second layer made of an insulating material, and a third layer made of a gas trapping material (gas trapping layer), and a material made of a gas trapping material having conductivity It can also be set as the laminated structure of 1 layer (gas trapping layer), the 2nd layer which consists of an insulating material, and the 3rd layer (gas trapping layer) which consists of a gas trapping material with electroconductivity. Alternatively, a laminated structure of four or more layers may be used. In the case where the gate electrode and the converging electrode have a laminated structure, not all parts of the gate electrode and the converging electrode need to be a laminated structure, but may have a partially laminated structure, but in this case, the portion that does not have the laminated structure It is necessary to have conductivity. In the case where the gate electrode and the converging electrode have a laminated structure of two layers, for example, the first layer and the second layer may have the same pattern, or the second layer may have a pattern covering the first layer. One layer may have a pattern covering the second layer. When the first layer is made of a conductive material, the second layer may be made of either a conductive material or an insulating material. It may be laminated in the order of a 1st layer and a 2nd layer from a support body side, and may be laminated in the order of a 2nd layer and a 1st layer. In the case of a three-layer laminated structure, the first layer, the second layer, and the third layer may be laminated in order from the support side, or may be laminated in the order of the third layer, the second layer, and the first layer. The outermost surface is preferably composed of a layer made of a gas trapping material from the viewpoint of increasing the gas trapping ability.

In the present invention, as a constituent material of the gas trapping layer, or as a gas trapping material, or as a gas trapping material layer (and these may be collectively referred to as a "gas trapping material"), it is conventionally known as a getter material. Any material of can be used. In the getter material, a so-called evaporation type material which vaporizes in a vacuum layer like barium and forms a thin film on the surface of the internal member facing the vacuum layer and exerts a gettering function, zirconium (Zr) and titanium (Ti) Zirconium-aluminum alloys, zirconium-vanadium-aluminum alloys, zirconium-vanadium-iron alloys, mixtures of zirconium powders and graphite powders, or magnesium; Although there is a non-evaporable material, the material used in the present invention is a non-evaporable material. In the gas trapping layer, it is necessary to be formed on the support member along the surface of the support member. Therefore, at the time of forming the gas trapping layer, by the method excellent in the step coating ability, the unevenness of the surface of the support member is further increased. (I) It is preferable to form a gas trapping layer in a thickness such that the holes and holes are not completely embedded. As a formation method of a gas trapping layer, a vapor deposition method, sputtering method, and CVD method are mentioned. In the planar display device or the manufacturing method thereof according to the third or fourth configuration of the present invention, the gate electrode or convergence electrode having a single layer structure made of a gas trapping material may be formed by vapor deposition, sputtering, or CVD. In addition, in the flat panel display according to the fifth aspect of the present invention or the method for manufacturing the same, the gate electrode having a single layer structure composed of a gas trapping material layer may be formed of the above-mentioned material in the form of a strip or sheet. Further, in the flat display device or the manufacturing method thereof according to the third or fourth configuration of the present invention, the gate electrode or the convergence electrode is at least a first layer made of a conductive material or an insulating material, and a second made of a gas trapping material. In the case of having a laminated structure with a layer, the first layer and the second layer may be formed by a vapor deposition method, a sputtering method, a CVD method, a printing method, or the like depending on the materials constituting them. And when a gate electrode or a converging electrode is made into at least two layer structure, all the parts of a gate electrode or a converging electrode may be made into a two layer structure, all the parts of a gate electrode or a converging electrode are comprised by a 1st layer, and a part is made into It is good also as a 1st layer and a 2nd layer structure, all parts of a gate electrode or a convergence electrode may be comprised by a 2nd layer, and a part may be set as a 1st layer and a 2nd layer structure. In the flat panel display according to the fifth aspect of the present invention or a method for manufacturing the same, the gate electrode or the convergence electrode is laminated at least with a first layer made of a conductive material or an insulating material, and a second layer made of a gas trapping material. When composed of a gas trapping material layer having a structure, the first layer is composed of a band-like or sheet-shaped metal layer, and the second layer is applied by a coating method, a vapor deposition method, a sputtering method, a CVD method, a printing method, a coating method, or the like. Although it can obtain by the method of forming in a phase, it is not limited to this. And when the gas trapping material layer has at least two layers, all parts of the gas trapping material layer may have a two-layer structure, all parts of the gas trapping material layer are configured as the first layer, and a part is the first layer. And a second layer configuration, all parts of the gas trapping material layer may be configured as a second layer, and a part may be configured as a first layer and a second layer configuration.

It is preferable that the gas trapping material has a characteristic that the gas trapping ability is increased with increasing temperature. A gas trapping material having a characteristic that the gas trapping ability becomes higher as the temperature rises, the temperature of the gas trapping material rises as a result of the emission gas or electrons from the phosphor layer colliding with the getter, the gate electrode and the converging electrode. The gas trapping ability of the gas trapping material is improved rather than emitting gas or the like like the substance. Alternatively, the gas trapping material is preferably activated to have a gas trapping ability as the heat treatment is performed. Examples of the heat treatment include irradiation of an electron beam to a gas trapping material, a vacuum atmosphere, or a heat treatment in a high temperature furnace made of an inert gas atmosphere such as argon or helium. Alternatively, the gas trapping material preferably has a characteristic that the gas trapping ability is increased as the temperature rises due to the collision of electrons. If the gas trapping material has a characteristic that the gas trapping ability becomes higher as the temperature rises due to the collision of electrons, the temperature of the gas trapping material rises as the electrons collide with the dummy gate electrode, so that the gas is not discharged as usual. Rather, the gas trapping ability of the gas trapping material is improved. Therefore, it becomes possible to prevent operation instability of the flat panel display device due to the temperature rise. And a zirconium-aluminum alloy and a titanium- zirconium- vanadium-iron alloy can be illustrated as a gas capture | acquisition material which has the characteristic that a gas trapping ability becomes high with a rise of temperature.

In the spin type electron emitting device, the material constituting the electron emitting portion is tungsten (W), molybdenum (Mo), titanium (Ti), niobium (Nb), tantalum (Ta), chromium (Cr), aluminum (Al). , copper containing (nitride or, WSi _2, MoSi2, TiSi _2, TaSi _2, etc. silicide such as, for example, TiN), and the impurity metal or a metal element alloy or a compound containing such (Cu) And at least one kind of material selected from the group consisting of silicon (polysilicon and amorphous silicon). The electron emission portion of the spin type electron emission device can be formed by, for example, a vapor deposition method, a sputtering method, or a CVD method.

In the crown type electron-emitting device, conductive materials or a combination of conductive particles and a binder can be cited as the material constituting the electron emission portion. As electroconductive particle, Carbon type materials, such as graphite; High melting point metals such as tungsten (W), niobium (Nb), tantalum (Ta), titanium (Ti), molybdenum (Mo), and chromium (Cr); Or transparent conductive materials, such as ITO (indium stone oxide), are mentioned. As the binder, for example, glass such as water glass or a general purpose resin can be used. As general purpose resins, thermoplastic resins such as vinyl chloride resin, polyolefin resin, polyamide resin, cellulose ester resin and fluorine resin, and thermosetting resins such as epoxy resin, acrylic resin and polyester resin are used. It can be illustrated. In order to improve the electron emission efficiency, it is preferable that the particle diameter of the conductive particles is sufficiently small compared with the dimensions of the electron emission portion. The shape of the conductive particles is not particularly limited, such as a sphere, a polyhedron, a plate, a needle, a mold, and an indefinite shape, but the shape of the conductive particles is preferably a shape in which exposed portions of the conductive particles can be sharp projections. . You may mix and use electroconductive particle from which a dimension and a shape differ. The electron emitting portion of the crown electron emitting device can be formed by, for example, a coating method, a vapor deposition method, or a sputtering method in combination with a lift-off method.

In the flat electron-emitting device, the material constituting the electron emitting portion is preferably composed of a material having a smaller function of φ than the material constituting the cathode electrode, and the material constituting the cathode is selected. What is necessary is to determine according to the function of 1, the potential difference between the gate electrode and the cathode electrode, the magnitude of the required emission electron current density, and the like. Typical materials constituting the cathode electrode in the electron-emitting device include tungsten (φ = 4,55 eV), niobium (φ = 4.02 to 4.87 eV), molybdenum (φ = 4.53 to 4.95 eV), aluminum (φ = 4.28 eV). , Copper (φ = 4.6 eV), tantalum (φ = 4.3 eV), chromium (φ = 4.5 eV), and silicon (φ = 4.9 eV). It is preferable that an electron emission part has a function (phi) of work smaller than these materials, and the value is usually 3 eV or less. As such a material, carbon (φ <1 eV), cesium (φ = 2.14 eV), LaB ₆ (φ = 2.66 to 2.76 eV), BaO (φ = 1.6 to 2.7 eV), SrO (φ = 1.25 to 1.6 eV), Y ₂ O ₃ (φ = 2.0 eV), CaO (φ = 1.6 to 1.86 eV), BaS (φ = 2.05 eV), TiN (φ = 2.92 eV), ZrN (φ = 2.92 eV). It is further preferable to configure the electron emission portion with a material whose work function φ is 2 eV or less. And the material which comprises an electron emission part does not necessarily need to be equipped with electroconductivity.

Particularly preferred constituent materials of the electron emitting portion include carbon, more specifically diamond, and amorphous diamond, among others. In the case where the electron emission portion is composed of amorphous diamond, the emission electron current density required for the flat panel display device can be obtained with an electric field strength of 5 x 10 ⁷ V / m or less. In addition, since the amorphous diamond is an electric resistor, the emission electron current obtained from each of the electron emission sections can be made uniform, and therefore, luminance unevenness in the case of being incorporated in a flat panel display device can be suppressed. In addition, since amorphous diamond has a very high resistance to sputtering action by ions of residual gas in a flat panel display device, the lifespan of the electron-emitting device can be extended.

Moreover, you may select suitably as a material which comprises an electron emission part from the material which becomes larger than the secondary electron gain (delta) of such a material. That is, silver (Ag), aluminum (Al), gold (Au), cobalt (Co), copper (Cu), molybdenum (Mo), niobium (Nb), nickel (Ni), platinum (Pt), tantalum (Ta) ), Metals such as tungsten (W) and zirconium (Zr); Semiconductors such as silicon (Si) and germanium (Ge); Inorganic groups such as carbon and diamond; And aluminum oxide (Al ₂ O ₃ ), barium oxide (BaO), beryllium oxide (BeO), calcium oxide (CaO), magnesium oxide (MgO), stone oxide (SnO ₂ ), barium fluoride (BaF ₂ ), calcium fluoride (CaF ₂₎ may be selected from compounds such as. And the material which comprises an electron emission part does not necessarily need to be equipped with electroconductivity.

In planar electron emitting devices, crater type electron emitting devices, or edge type electron emitting devices, tungsten (W), tantalum (Ta), and niobium (Nb) are used as materials constituting the cathode electrode corresponding to the electron emitting portion or the electron emitting layer. ), Metals such as titanium (Ti), molybdenum (Mo), chromium (Cr), aluminum (Al), copper (Cu), gold (Au), silver (Ag), or alloys or compounds thereof (e.g. , Nitrides such as TiN, silicides such as WSi ₂ , MoSi ₂ , TiSi ₂ , TaSi ₂ ), or semiconductors such as diamond, and carbon thin films. Although the thickness of such a cathode electrode is about 0.05-0.5 micrometer, Preferably it is preferable to set it as 0.1-0.3 micrometer, but it is not limited to this range. Examples of the method for forming the cathode include a vapor deposition method such as an electron beam deposition method and a hot filament deposition method, a sputtering method, a combination of a CVD method, an ion plating method and an etching method, a screen printing method, and a plating method. According to the screen printing method or the plating method, it is possible to form a stripe type cathode electrode directly.

In addition, in the flat electron emitting device, the planar electron emitting device, the crater type electron emitting device or the edge type electron emitting device, the cathode electrode (or the conductive material layer for the cathode electrode) or the electron emitting part (or the electron emitting layer) is used as the conductive fine particles. It can also be formed using a conductive paste in which is dispersed. Examples of the conductive fine particles include graphite powder; Graphite powder in which at least one of barium oxide powder, strontium oxide powder and metal powder is mixed; Diamond particles or diamond-like carbon powder containing impurities such as nitrogen, phosphorus, boron and triazole; Carbon-nano-tube powder; (Sr, Ba, Ca) CO ₃ powder; Carbon carbide powder can be illustrated. In particular, it is preferable to select graphite powder as the conductive fine particles from the viewpoint of reducing the critical electric field or durability of the electron emitting portion. The shape of electroconductive fine particles can be made into arbitrary fixed shape and amorphous shape other than spherical scaly shape. Moreover, the particle diameter of electroconductive particle should just be below the thickness and pattern width of a cathode electrode or an electron emission part. The smaller the particle diameter can increase the number of emission electrons per unit area, but if it is too small, the conductivity of the cathode electrode or the electron emission portion may be deteriorated. Therefore, the range of a preferable particle diameter is about 0.01-4.0 micrometers. These conductive fine particles are mixed with a glass component or other suitable binder to prepare a conductive paste, and a desired pattern is formed by screen printing using the conductive paste, and then the pattern is fired to function as an electron emitting portion. A cathode electrode or an electron emitting portion can be formed. Alternatively, a combination of spin coating and etching techniques may form a cathode electrode or an electron emitting portion that functions as an electron emitting portion.

In addition, in the electron-emitting device having the first structure consisting of a spin type electron-emitting device or a crown-type electron-emitting device, tungsten (W) and niobium (W) as a material constituting the cathode electrode (or the conductive material layer for the cathode electrode) Metals such as Nb), tantalum (Ta), molybdenum (Mo), chromium (Cr), aluminum (Al), and copper (Cu), alloys or compounds containing these metal elements (for example, nitrides such as TiN, , Silicides such as WSi ₂ , MoSi ₂ , TiSi ₂ , TaSi ₂ ), or semiconductors such as silicon (Si), and ITO (indium stone oxide). Examples of the method for forming the cathode include a vapor deposition method such as an electron beam deposition method and a hot filament deposition method, a sputtering method, a combination of a CVD method, an ion plating method and an etching method, a screen printing method, and a plating method. According to the screen printing method or the plating method, it is possible to form a stripe type cathode electrode directly.

In the planar display device according to the first and second configurations, although the structures are used, tungsten (W) and niobium (W), niobium (W), Metals such as Nb), tantalum (Ta), molybdenum (Mo), chromium (Cr), aluminum (Al), and copper (Cu), alloys or compounds containing these metal elements (for example, nitrides such as TiN, , Silicides such as WSi ₂ , MoSi ₂ , TiSi ₂ , TaSi ₂ ), or semiconductors such as silicon (Si), diamond, carbon, and ITO (indium stone oxide). The materials constituting these electrodes may be the same kind of material or different materials. As the method for forming these electrodes, conventional thin film production methods such as vapor deposition, sputtering, CVD, ion plating, printing, and plating can be used.

In the flat display device of the present invention and the method of manufacturing the flat display device of the present invention, the support which is a component of the first panel should have at least a surface composed of an insulating member, and a glass substrate and a glass substrate having an insulating film formed on the surface thereof. , A quartz substrate, a quartz substrate having an insulating film formed on its surface, and a semiconductor substrate having an insulating film formed on its surface. Moreover, the board | substrate which is a component of a 2nd panel can also be comprised similarly to a support body.

Insulating layer, the second insulating layer, examples of the material of the top insulating layer, or the lower insulating layer, SiO _2, SiN, SiON, SOG (spin-on-glass), it is possible to use a glass paste cured product alone or in proper combination. A well-known method, such as a CVD method, a coating method, a sputtering method, a printing method, can be used for formation of an insulating layer, a 2nd insulating layer, an upper insulating layer, or a lower insulating layer.

In the flat panel display according to the fifth aspect of the present invention or the manufacturing method thereof (the manufacturing method of flat panel display according to the seventh aspect of the present invention), the spacer may be formed in an area between adjacent stripe cathodes. Alternatively, when a plurality of cathode electrodes are used as one group of cathode electrode groups, they may be formed in regions between adjacent cathode electrode groups. In some cases, the spacer may be formed only near the boundary between the effective area and the invalid area. As a material which comprises a spacer, a conventionally well-known insulating material can be used, For example, the material which mixed metal oxides, such as alumina, with the low melting glass which is widely used can be used. As a method of forming the spacer, a screen printing method, a sand blasting method, a dry film method or a photosensitive method can be exemplified. The dry film method is a method of laminating a photosensitive film on a substrate, removing a photosensitive film of a portion where a spacer is to be formed by exposure and development, and embedding and firing an insulating material in an opening generated by the removal. to be. The photosensitive film is burned and removed by firing, and an insulating material for forming a partition embedded in the opening remains to form a partition spacer. The photosensitive method is a method of forming an insulating material for forming partition walls having photosensitivity on a substrate, and then firing after patterning the insulating material by exposure and development. The spacer may be formed by a known method such as a CVD method, a coating method, a sputtering method, or a printing method, depending on the material constituting the insulating layer described above.

The planar shape of the opening in the electron-emitting device (shape when the opening is cut in a virtual plane parallel to the substrate surface) may be in any shape such as a circle, an ellipse, a rectangle, a polygon, a rounded rectangle, or a rounded polygon. can do. The opening may be formed by, for example, a combination of isotropic etching, anisotropic etching, and isotropic etching. In the electron emitting device, one electron emission portion may exist in one opening formed in the gate electrode and the insulating layer, and a plurality of electron emission portions may exist in one opening formed in the gate electrode and the insulating layer, and the gate electrode A plurality of openings may be formed in the opening, one opening communicating with the opening may be formed in the insulating layer, and one or a plurality of electron emitting portions may be present in one opening formed in the insulating layer.

In the electron emitting device, a resistor layer may be formed between the cathode electrode and the electron emitting portion. Alternatively, when the surface of the cathode electrode or the edge portion thereof corresponds to the electron emitting portion, that is, in the case of a planar electron emitting element or an edge type electron emitting element, the cathode electrode may emit electrons corresponding to the conductive material layer, the resistor layer and the electron emitting portion. It is good also as a three-layered constitution of layers. By forming the resistor layer, the operation of the electron-emitting device can be stabilized and the electron emission characteristics can be made uniform. As the material constituting the resistor layer, a carbon-based material such as silicon carbide (SiC), semiconductor materials such as SiN and amorphous silicon, high melting point metal oxides such as ruthenium oxide (RuO ₂ ), tantalum oxide, and tantalum nitride can be exemplified. have. As a method for forming the resistor layer, a sputtering method, a CVD method or a screen printing method can be exemplified. The resistance value is usually 1 x 10 ⁵ to 1 x 10 ⁷ kPa, preferably several M kPa.

In the flat display device according to the first to fifth configurations of the present invention, the getter of the present invention may be further formed in the effective area of the second panel.

In the planar display device according to the first to fifth aspects of the present invention, as a general configuration of a second panel in the case of a cold cathode field emission display device, an anode electrode is formed on the entire surface of the substrate in the effective area. And a phosphor layer having a predetermined pattern formed on the anode electrode, a phosphor layer having a predetermined pattern formed on the substrate in the effective region, and a metal back on the phosphor layer and the substrate. There is a type in which an anode electrode is formed. In the case of the former, what is called a metal white film | membrane which electrically connected with the anode electrode may be formed on the phosphor layer. In the latter case, a metal white film may be further formed on the anode electrode. The anode electrode may be an anode electrode in which the effective region is covered with one sheet-type conductive material, or may be an anode electrode in which an anode electrode unit corresponding to one or a plurality of electron emission regions is aggregated. The phosphor layer is formed in a stripe shape or a dot shape. In the case of color display, phosphor layers corresponding to three primary colors of red (R), green (G), and blue (B) patterned in a stripe or dot form are alternately arranged. The stripe or dot phosphor layer faces the electron emission region. A black matrix may be formed between the phosphor layer and the phosphor layer. In the planar display device according to the first to fifth aspects of the present invention, in any type, a portion of the getter of the present invention facing the vacuum layer in an effective region in which the phosphor layer is not formed (for example, an anode electrode) On the top). In the practical second panel configuration, when the space between adjacent phosphor layers is embedded in a black matrix for improving contrast, the getter of the present invention is placed on the black matrix or on a portion of the anode electrode positioned on the black matrix. You may form. The anode electrode can be made of, for example, a metal thin film made of aluminum or a transparent conductive material such as ITO (indium stone oxide).

In the flat panel display of the present invention or a method of manufacturing the same, since the getter is disposed near the site where the emitted gas is generated, or the gate electrode and the converging electrode function as the getter, the gas trapping action is performed in the vacuum layer. The rise in pressure and discharge can be effectively prevented.

EMBODIMENT OF THE INVENTION Hereinafter, this invention is demonstrated according to embodiment of this invention (it abbreviates to embodiment below) with reference to drawings.

Embodiment 1

Embodiment 1 relates to the getter and the flat panel display of the present invention. The structural example of the getter of this invention is demonstrated with reference to FIG. 1 (A)-FIG. 1 (C). The getter 43A ("getter 43A of the first type") shown in Fig. 1A is formed on the base 40, and has a support member having irregularities on its surface and a surface of the support member. It consists of the gas capture layer 42 formed in the support member. Here, the support member is made of hemispherical silicon particles 41 (corresponding to roughly hemispherical silicon particles). 1B, a getter 43B composed of a support member composed of an amorphous silicon layer 44 formed on the base 40 and a hemispherical silicon particle 41 formed on the amorphous silicon layer 44 ("second"). Type getter 43B ". The amorphous silicon layer 44 serves to facilitate the growth of the hemispherical silicon particles 41 by facilitating the formation of the silicon nucleus when the support member made of the hemispherical silicon particles is difficult to grow directly on the surface of the base 40. Complete. In the getter 43C shown in FIG. 1C ("getter 43C of the third type"), the support member is made of a porous body 45. In any of the getters 43A, 43B, 43C of the first type, the second type, or the third type, the surface area of the gas trapping layer 42 is increased compared with the case where the surface of the gas trapping layer is flat. Emission gas existing in the air can be captured efficiently. The getters 43A, 43B, 43C of the first, second, or third type of the present invention are cathode ray in addition to the flat display device of the present invention and the flat display device of the first and second configurations of the present invention. It can also be used for pipes.

Next, a schematic structural example of the flat panel display of the present invention is illustrated in Figs. 2A to 2C. In the planar display device illustrated in FIG. 2A, the effective area EF ₁ in which the first panel P ₁ and the second panel P ₂ are disposed to face each other with the vacuum layer VAC interposed therebetween, and the pixels are arranged. , EF ₂ ), and a getter for maintaining the degree of vacuum of the vacuum layer VAC is formed in the effective region EF ₁ of the first panel P ₁ . The first panel P ₁ and the second panel P ₂ are joined to each other through a seal member S at the periphery of each other. In the flat panel display device shown in FIG. 2B, a getter for maintaining the degree of vacuum of the vacuum layer VAC is formed in the effective region EF ₂ of the second panel P ₂ . In addition, in the flat display device shown in FIG. 2C, the vacuum degree of the vacuum layer VAC is maintained in the effective areas EF ₁ and EF _{2 of} both the first panel P ₁ and the second panel P ₂ . A getter for forming is formed. When the first panel P ₁ and the second panel P ₂ are the cathode panel and the anode panel of the cold cathode EL display, respectively, the getter may be formed on either the cathode panel or the anode panel, or both. It may be formed in the panel of.

The seal member S may be an adhesive layer or a combination of a frame made of an insulating rigid material such as glass or ceramic and an adhesive layer. When the combination of the adhesive layer and the frame is employed as the seal member S, by selecting the height of the frame appropriately, it is possible to set the opposing distance between the panels longer than in the case of using only the adhesive layer. And although a frit glass is common as a contact bonding layer, you may use what is called a low melting-point metal material whose melting | fusing point is about 120-400 degreeC. As such a low melting metal material, In (indium: melting | fusing point 157 degreeC); Indium-gold low melting point alloys; High temperature solders such as Sn ₈₀ Ag ₂₀ (melting point 220 to 370 ° C.) and Sn ₉₅ Cu ₅ (melting point 227 to 370 ° C.); Lead (Pb) high temperature solders such as Pb _95.5 Ag _2.5 (melting point 304 ° C), Pb _94.5 Ag _5.5 (melting point _304-365 ° C), Pb _97.5 Ag _1.5 Sn _1.0 (melting point 309 ° C); Zinc (Zn) based high temperature solders such as Zn ₉₅ Al ₅ (melting point 380 ° C.); Stone-based standard solders such as Sn ₅ Pb ₉₅ (melting point 300 to 314 ° C.) and Sn ₂ Pb ₉₈ (melting point 316 to 322 ° C.); Examples of the solder material such as Au88Ga12 (melting point 381 占 폚) (the above subscripts all represent atomic%) can be exemplified.

When joining the first panel P ₁ and the second panel P _{2 to} the three characters of the frame, three-way simultaneous joining may be performed, or in the first step, any one panel and the frame are first joined, and In the second step, the other panel and the frame may be joined. If the three-way simultaneous joining or joining in the second stage can be performed in a high vacuum container, the space surrounded by the first panel P ₁ , the second panel P ₂ and the seal member S is simultaneously joined. It becomes a vacuum layer VAC. Alternatively, after completion of the bonding of the three characters, the space surrounded by the first panel P ₁ , the second panel P ₂ , and the seal member S may be exhausted to form the vacuum layer VAC. Thus, when exhausting after joining, the atmosphere at the time of joining may be either normal pressure / decompression, and it may be atmosphere or nitrogen gas or gas belonging to group 0 of the periodic table (for example, Ar gas) may be used.

When exhausting after joining, exhausting can be performed through a tip tube (not shown) previously connected to the first panel P ₁ and / or the second panel P ₂ . The tip tube is typically constructed using a glass tube, and has an invalid area NE ₁ , NE _{2 of} the first panel P ₁ and / or the second panel P ₂ (that is, an effective area serving as a display screen) around the through hole formed in the EF _1, an area other than the EF _2), frit glass or may be bonded using a low-melting-point metal material described above, after the space reaches a predetermined degree of vacuum, for example, subjected to heat treatment gas Activation of the trapping layer or the gas trapping material is achieved, and then the tip tube is sealed by heat fusion.

Next, a planar display device according to a first configuration of the present invention will be described with reference to FIGS. 3A to 3E. Here, for the sake of simplicity, only the cold cathode field emission device (hereinafter referred to as "electron emission device") and the getter formed in the effective area EF ₁ of the first panel P _{1 are} shown. The electron-emitting device includes a cathode electrode 11 formed on the support 10, an insulating layer 12 formed on the cathode electrode 11 and the support 10, and a gate electrode 13 formed on the insulating layer 12. And the electron emission portions 15, 15A, 15B, and 15C formed on the opening 14 penetrating through the gate electrode 13 and the insulating layer 12, and on the cathode electrode 11 positioned at the bottom of the opening 14. Is made of. The first panel P ₁ is further provided with a getter formed on the gate electrode 13. Although the getter 43B of the 2nd type is shown here as a getter, the getter 43A of a 1st type or the getter 43C of a 3rd type may be sufficient. The electron-emitting device shown in Fig. 3A is a type called a spin-type electron-emitting device, and has a conical electron-emitting portion 15. Figs. The electron-emitting device shown in Fig. 3B is a type which can be called a crown-type electron-emitting device, and has a crown-shaped electron-emitting part 15A. The electron-emitting device shown in Fig. 3C is of a type that can be called flat and has a flat electron-emitting portion 15B. In order to obtain a sufficient emission electron current even when flat, the electron emission section 15B is made of a material having a higher electron emission efficiency than a general high melting point metal. In addition, the electron-emitting device shown in FIG. 3D is a type called a so-called planar electron-emitting device, and an exposed portion of the cathode electrode 11 at the bottom of the opening 14 corresponds to the electron-emitting part 15C. .

Another flat display device according to the first configuration of the present invention will be described with reference to FIGS. 4A to 4C. Here, for the sake of simplicity, only the electron-emitting device (edge-type electron-emitting device) and the getter formed in the effective area EF ₁ of the first panel P _{1 are} shown. In these figures, the electron-emitting device is formed on the support 10, the insulating layer covering the electron-emitting layer 111, the gate electrode 13 formed on the insulating layer, the gate electrode 13 and the electron-emitting layer It consists of the opening part 14 which penetrates through 111, and the end part 111A of the electron emission layer 111 exposed to the side wall surface of the opening part 14, and the electron emission part. The first panel P ₁ is further provided with a getter formed on the gate electrode 13. Although the getter 43B of the 2nd type is shown here as a getter, the getter 43A of a 1st type or the getter 43C of a 3rd type may be sufficient. In the electron-emitting device shown in Fig. 4A, the insulating layer consists of a single insulating layer 12, and the electron-emitting layer 111 is formed in contact with the support 10. In the electron-emitting device shown in FIG. 4B, the insulating layer is composed of a lower insulating layer 12A formed below the electron emitting layer 111 and an upper insulating layer 12B formed above the electron emitting layer 111. In addition to the upper insulating layer 12B, the opening 14 is formed so as to remove a part of the lower insulating layer 12A. In addition, in the electron-emitting device shown in FIG. 4C, the insulating layer is a lower insulating layer 12A formed below the electron emitting layer 111 and an upper insulating layer 12B formed above the electron emitting layer 111. The first gate electrode 13A is further formed below and below the lower insulating layer 12A, and the first gate electrode 13A is exposed at the bottom of the opening 14. The second gate electrode 13B is formed on the upper insulating layer 12B. By forming this first gate electrode 13A, a high-intensity electric field can be formed near the end 111A of the electron emission layer 111 protruding from the wall surface of the opening 14 corresponding to the electron emission portion. Incidentally, other types of electron-emitting devices will be described later.

Embodiment 2

Embodiment 2 relates to a manufacturing method according to the first configuration of the present invention and a flat panel display device according to the first configuration of the present invention obtained thereby. As a representative example of the flat panel display device according to the first configuration, a process diagram of a method of manufacturing a flat panel display device (cold cathode field emission display device) having the spin type electron emission device shown in Fig. 3A is shown in Figs. 9 is an overall view of a flat panel display device (cold cathode field emission display device). 10 is a schematic conceptual perspective view when the flat panel display is disassembled, and FIG. 11 is a schematic perspective view when the flat panel display is disassembled.

In the manufacturing method of Embodiment 2, the getter 43B of the 2nd form shown to FIG. 1 (B) is used as a specific example of a getter. As the getter, not only the getter 43B of the second type but also the getter 43A of the first type and the getter 43C of the third type can be used. 5 to 7 show only the electron-emitting device and the getter formed in the effective area of the first panel P ₁ for the sake of simplicity. 6 and 7, only one opening and one electron emitting portion are shown for one gate electrode 1.

The manufacturing method of the spin type electron-emitting device is basically a method of forming the conical electron-emitting part 15 by vertical deposition of a metal material. That is, the amount of deposited particles that reach the bottom of the openings 14 is determined by using the shielding effect of the overhang-type deposits formed in the vicinity of the openings 14 while the deposition particles are incident perpendicularly to the openings 14. By diminishing, the electron emission part 15 which is a conical deposit is formed self-aligning. Hereinafter, in order to facilitate the removal of unnecessary overhang type soils, an outline of a manufacturing method of a flat panel display device having a spin type electron-emitting device according to a method of forming a release layer 18 on the gate electrode 13 in advance will be described. 5 to 7, which are schematic partial cross-sectional views of a support body and the like, and FIG. 8 which is a schematic partial cross-sectional view of a substrate and the like.

[Process-200]

First, as an example, a cathode electrode conductive material layer made of chromium having a thickness of about 0.2 μm is formed on the support 10 made of a glass substrate by the sputtering method, and according to the lithography technique and the etching technique, the cathode electrode conductive layer is formed. The material layer is patterned in a stripe pattern to form the cathode electrode 11. Next, an insulating layer 12 is formed on the cathode electrode 11 and the support 10. Here, as an example, the SiO ₂ layer is formed to a thickness of about 1 μm by the CVD method used as a TEOS (tetraethoxysilane) source gas. Subsequently, on this insulating layer 12, a conductive material layer (gate electrode conductive material layer 13 ') for forming a gate electrode is formed. Here, as a conductive material layer 13 'for a gate electrode, the chromium layer of thickness about 0.2 micrometer is formed into a film by sputtering method, for example.

Further, a getter formation layer 43 is formed on the conductive material layer 13 'for the gate electrode. The getter formation layer 43 is composed of an amorphous silicon layer 22, a hemispherical silicon particle 41, and a gas trapping layer 42 made of, for example, an aluminum zirconium alloy, in order from the lower layer side (FIG. 1B). Reference). The support member is constituted by the amorphous silicon layer 44 and the hemispherical silicon particles 41. An example of the conditions for forming the amorphous silicon layer 44 by the reduced pressure CVD method is shown in Table 1 below. And PH ₃ does not need to be added. Moreover, in the formation process of the hemispherical silicon particle 41, an example of the nucleation conditions by pressure reduction CVD method is shown in following Table 2. Further, on the support member, for example, a gas trapping layer 42 made of an aluminum zirconium alloy is formed by the sputtering method (see Fig. 5A).

[Formation Conditions of Amorphous Silicon Layer] SiH ₄ flow 15SCCM PH ₃ flow rate 25SCCM pressure 1 × 10 ^-3 Pa Forming temperature 540 ℃

[Nucleation conditions] SiH ₄ flow 20SCCM He flow rate 30SCCM pressure 1.33 × 10 ^-3 Pa Nucleation Temperature 560 ℃

[Process-210]

Next, an etching mask EM is formed on the getter formation layer 43 by photolithography technique, and the etching mask EM is used as an etching mask, and the getter formation layer 43 and the conductive material for the gate electrode are formed. Layer 13 'is patterned by reactive ion etching. Thereby, the gate electrode 13 formed in the upper surface of the getter 43B of the 2nd type can be formed (refer FIG. 5 (B)).

[Process-220]

Next, the etching mask EM is removed, and the etching mask EM is newly formed on the getter 43B and the insulating layer 12 of the second type, and the etching mask EM is used. The etching of the getter 43B, the gate electrode 13, and the insulating layer 12 of the 2nd type is performed in order, and the opening part 14 which the cathode electrode 11 was exposed in the bottom is formed. Here, the openings in the getter 43B and the gate electrode 13 of the second type are formed by reactive ion etching, and the openings in the insulating layer 12 are formed by wet etching using a buffered hydrofluoric acid aqueous solution. This can be done by. Since the etching of the insulating layer 12 proceeds isotropically, the side wall surface of the opening portion 14 retreats from the end of the gate electrode 13 as shown in Fig. 6A. The amount of retreat at this time can be controlled by the length and length of the etching time. The shape of this opening 14 is desirable to increase the field strength in the opening 14.

[Process-230]

Next, the etching mask EM is removed and aluminum is deposited on the entire surface to form a release layer 18 as shown in Fig. 6B. At this time, by sufficiently selecting the incidence angle of the deposited particles with respect to the normal of the support 10, the aluminum is deposited on the bottom of the opening 14 and the getter 43B and the insulating layer 12 of the second type are hardly deposited. The release layer 18 can be formed on it. The release layer 18 protrudes from the opening end of the opening 14 in a sunshade, whereby the opening 14 is substantially reduced in diameter.

[Process-240]

Next, for example, molybdenum (Mo) is vertically deposited on the entire surface. At this time, as the electron emission portion forming layer 19 having an overhang shape is grown on the release layer 18, since the substantial diameter of the opening 14 is gradually reduced, the deposited particles contribute to the deposition at the bottom of the opening 14. Is gradually limited to the component passing near the center of the opening 14. As a result, as shown in Fig. 7A, conical deposits are formed at the bottom of the opening 14, and the conical deposits become the electron emitting portions 15. Figs.

[Process-250]

Subsequently, by removing the release layer 18 together with the electron emission portion forming layer 19 thereon using an aqueous solution of phosphoric acid, a spin type electron-emitting device as shown in Fig. 7B can be completed.

[Process-260]

The combination of the first panel (cathode panel) P ₁ and the second panel (anode panel) P _{2 on} which a large number of such electron emitting devices are formed can provide a flat display device. Specifically, for example, a frame 24 having a height of about 1 mm made of ceramics or glass is prepared, and the frame 24, the first panel P ₁ , and the second panel P ₂ are exemplified. For example, what is necessary is just to bond together using frit glass, and to dry the frit glass at about 450 degreeC for 10 to 30 minutes. Subsequently, the inside of the flat panel display device is evacuated to a vacuum degree of about 10 ⁻⁴ Pa, and then heated, for example, to activate the gas trapping layer (gas trapping material). Then, the tip tube 17 is sealed by a suitable method. Further, for example, the bonding of the frame 24, the first panel P ₁ and the second panel P ₂ may be performed in a high vacuum atmosphere, or depending on the structure of the flat panel display device, the first without frame It may be bonded to the panel (P ₁₎ and the second panel (P _2).

An example of the manufacturing method of the second panel P ₂ will be described below with reference to FIG. 8. First, the luminescent crystal grain composition is prepared. For this purpose, for example, a dispersant is dispersed in pure water and stirred for 1 minute at 3000 rpm using a homomixer. Next, the above-mentioned luminescent crystal grains are thrown in the pure water which the dispersing agent disperse | distributed, and it stirs at 5000 rpm for 5 minutes using a homomixer. Then, polyvinyl alcohol and ammonium dichromate are added, for example, and it fully stirs and filters.

In the second manufacturing a panel (P _2), for example, the front forming (coating), a photosensitive film 25 on the on the substrate 20 made of glass. The photosensitive film 25 formed on the substrate 20 is exposed by the exposure light emitted from an exposure light source (not shown) and passed through the hole 29 formed in the mask 28 to expose the photosensitive region. (26) is formed (see FIG. 8 (A)). Thereafter, the photosensitive film 25 is developed and selectively removed, and the remainder of the photosensitive film (exposure, photosensitive film after development) 27 is left on the substrate 20 (see Fig. 8B). Next, a carbon substrate (carbon slurry) is applied to the entire surface, dried and baked, and then the exposed substrate is removed by removing the remainder 27 of the photosensitive film and the carbon substrate thereon by a lift-off method. The black matrix 22 which consists of carbon is formed on (20), and the remainder 27 of the photosensitive film is removed (refer FIG. 8 (C)). Thereafter, red, green, and blue phosphors 21 are formed on the exposed substrate 20 (see Fig. 8D). Specifically, using the luminescent crystal grain composition prepared from each of the above-mentioned luminescent crystal grains (phosphor particles), for example, a red photosensitive luminescent crystal grain composition (phosphor slurry) is applied to the entire surface to be exposed and developed. Next, a green photosensitive luminescent crystal grain composition (phosphor slurry) may be apply | coated to the whole surface, and it may expose and develop, and a blue photosensitive luminescent crystal grain composition (phosphor slurry) may be apply | coated to the whole surface, and it may expose and develop. Thereafter, an anode electrode 23 made of an aluminum thin film having a thickness of about 0.07 μm is formed on the phosphor layer 21 and the black matrix 22 by sputtering. The phosphor layer 21 can also be formed by screen printing or the like.

9, the structural example of the flat-panel display apparatus which concerns on Embodiment 2 was shown. In Fig. 9, two openings 14 and two electron emitting portions 15 are shown for one gate electrode 13, but the basic configuration of the spin type electron-emitting device is as shown in Fig. 7B. The above-described spin type electron-emitting device is formed in the effective region EF ₁ of the first panel P ₁ (also called a cathode panel). On the other hand, the second panel P ₂ (also referred to as an anode panel) includes a substrate 20, a phosphor layer (phosphor layers 21R, 21G, 21B) formed on a substrate 20 according to a predetermined pattern, and a phosphor. It consists of an anode electrode 23 formed over the entire surface on the layer 21. The adjacent phosphor layers 21 are embedded in a black matrix 22 for improving contrast.

As shown in FIG. 10, a schematic view of an exploded flat display device is shown, the first panel P ₁ (display panel) and the second panel P _{2 are} connected to the vacuum layer VAC. being disposed so as to face sandwiching, the is joined with the first panel (P ₁₎ and the second panel (P ₂₎ the frame 24 in the periphery. In FIG. 10, the junction part was shown by hatching. Each of the first panel P ₁ and the second panel P ₂ has pixels arranged and effective areas EF ₁ and EF ₂ (displayed by hatching) and function as an actual display screen, and an effective area EF. ₁ , EF ₂ ), and are functionally distinguished from the invalid areas NE ₁ and NE _{2 in which} peripheral circuits and the like for selecting pixels are formed. Another through hole 16 for vacuum evacuation is formed in the ineffective area NE ₁ , and a tip pipe 17 sealed after vacuum evacuation is connected to the through hole 16. The degree of vacuum of the vacuum layer VAC is in the order of 10 ⁻⁴ to 10 ⁻⁶ Pa.

As shown in FIG. 11, the sprite type conductive material layer (cathode electrode conductive material) which comprises the cathode electrode 11, and the stripe type gate electrode conductive material layer which comprise the gate electrode 13 are these layers. In the second embodiment, a plurality of projection images are formed in directions perpendicular to each other and correspond to regions where the projection images of these stripe layers overlap with each other (corresponding to one pixel area and being an electron emission region). Electron-emitting devices are arranged. In addition, such an electron emission region is normally arranged in a two-dimensional matrix in the effective region EF ₁ of the first panel P ₁ . One pixel includes an electron emission region (having one group of electron emission elements having a predetermined number) in which the cathode electrode conductive material layer and the gate electrode conductive material layer on the first panel P ₁ side overlap, and the electron emission region. the first is composed of the second panel (P _2), the phosphor layer 21 on the side opposite to. In the effective areas EF ₁ and EF ₂ , such pixels are arranged in a two-dimensional matrix, for example, in the order of hundreds to millions of orders.

A relative negative voltage is applied from the scan circuit 30 to the cathode electrode 11, a relative positive voltage is applied from the control circuit 31 to the gate electrode 13, and a gate electrode 13 is applied to the anode electrode 23. A positive voltage higher than) is applied from the acceleration power supply 32. In the case of displaying in such a flat panel display device, a scan signal is input from the scan circuit 30 to the cathode electrode 11, and a video signal is input from the control circuit 31 to the gate electrode 13. When the previous position ΔV between the gate electrode 13 and the cathode electrode becomes higher than a certain threshold voltage Vth, the electron emission unit 15 is driven in accordance with the electric field generated by the potential difference ΔV. Protons are emitted by the quantum tunnel effect from the tip of.

Specifically, in the flat display device of Embodiment 2, the electron emission regions arranged in the row direction (X direction) are sequentially operated in the column direction (Y direction). That is, a constant voltage V _G is sequentially applied from the scanning circuit 31 to each of the stripe gate electrode conductive material layers on which the gate electrode 13 is formed. On the other hand, a voltage of 0 ≦ [V _{C -MAX} to V _{C -MIN} ] (<V _G ) is applied to each of the conductive material layers for stripe cathode electrodes constituting the gate electrode 11 by the control circuit 30. do. Accordingly, the electron emission in which the stripe-type conductive material layer for the gate electrode to which the voltage V _G is applied and the conductive material layer for each of the cathode electrode to which the voltages V _{C -MAX} to V _{C -MIN} are applied are overlapped. In the region, when (V _G -V _C-MIN ), the potential difference ΔV is maximized, the amount of electrons emitted from the electron emission region is maximized, and the electrons are attracted to the anode electrode 23 to form a phosphor. Impinges on layer 21. A positive voltage higher than that of the gate electrode 13 is applied to the anode electrode 23 from the acceleration power supply 32. As a result, the light emission luminance of the phosphor layer corresponding to the electron emission region is the highest. On the other hand, when (V _G -V _G-MAX ), the potential difference DELTA V is minimized, electrons are not emitted from the electron emission region, and the phosphor layer corresponding to the electron emission region does not emit light. By applying a voltage of V _{C -MAX} to V _{C -MIN} to each of the conductive material layer for the cathode electrode, the emission luminance of the phosphor layer can be restricted.

In the flat display device having such a configuration, the getter 43B of the second type is formed on the effective region EF ₁ of the first panel P ₁ , more specifically, on each gate region 13. An equal gas trapping effect is assured for the spin type electron-emitting devices located at all places in the effective area. Therefore, in such a flat panel display, damage of a local discharge and an electron emission part is suppressed, and long life and high image quality are achieved.

Embodiment 3

Embodiment 3 is a modification of Embodiment 2. The main difference between Embodiment 3 and Embodiment 2 is that a third type getter 43C having a support member made of the porous body 45 is formed.

First, except for using ITO as a constituent material of the cathode electrode 11, the gate electrode conductive material layer 13 'is formed in the same manner as in [Step-200] of the second embodiment. Next, a getter formation layer 43 is formed on the conductive material layer 13 'for the gate electrode. The getter formation layer 43 is comprised from the porous body 45 and the gas trapping layer 42 formed on the porous body 45 sequentially from the lower layer side (refer FIG. 1 (C)). Here, for example, the porous body made of silicon oxide-based xerogel is formed by applying a methylsiloxane solution to the entire surface by a rotation coating method at a rotational speed of about 3000 rpm and firing the obtained support member forming film at about 500 ° C. To form. Subsequently, the gas trapping layer 42 made of titanium (Ti) is formed on the porous body 45 by, for example, sputtering or CVD. An example of the conditions for forming the gas trapping layer 42 made of titanium (Ti) by the CVD method is shown in Table 3 below. The subsequent steps can be performed in the same manner as in the second embodiment, except that the electron emitting portions 15 are formed using tungsten. Also in the third embodiment, the same flat display device as that shown in FIGS. 9 to 11 can be configured.

[Formation Conditions of Gas Capture Layer Made of Titanium (Ti)] CVD equipment Yujin Microwave Plasma CVD System TiCl ₄ 15SCCM H ₂ flow rate 50SCCM Ar flow 43SCCM pressure 0.3 Pa Microwave power 2.0 kW (2.45 GHz) Forming temperature 420 ℃

Embodiment 4

Embodiment 4 is a modification of Embodiment 3. The main difference between Embodiment 4 and Embodiment 3 lies in that the porous body 45 is formed by applying phase separation. In the formation process of the porous body 45, first, the solution which melt | dissolved TEOS and trimethoxyboric acid in ethanol in the weight ratio of 10: 3, for example is apply | coated to the whole surface by the rotation coating method at about 3000 rpm. Next, the obtained support member formation film is calcined at about 200 degreeC, and the organic substance contained in a solution is removed. Moreover, when main baking is performed at about 500 degreeC, the state which the particle | grains of boron oxide precipitated in borosilicate glass by phase separation is obtained. Subsequently, when etching using hot water is performed, only the fine particles of boron oxide are dissolved and removed to obtain a porous body 45 of borosilicate glass. The subsequent steps can be the same as in the third embodiment. Also in Embodiment 4, the same flat display device as that shown in FIGS. 9 to 11 can be configured.

Embodiment 5

Embodiment 5 is another modification of Embodiment 3. The main difference between Embodiment 5 and Embodiment 3 is that the porous body 45 is formed by etching away a component having a relatively high etching rate. In the formation process of the porous body 45, first, the solution which melt | dissolved TEOS and methyltrimethoxy silane in ethanol in the weight ratio of 10: 4, for example is apply | coated to the whole surface by the rotation coating method at about 3000 rpm. Next, the obtained support member forming film is plasticized at about 200 ° C. to remove organic substances contained in the solution. At this time, in the support member forming film obtained, silicon oxide derived from TEOS and silicon oxide derived from methyltrimethoxy silane coexist. Subsequently, when etching using a 1% hydrofluoric acid aqueous solution, silicon oxide derived from methylmethoxy silane having a relatively high etching rate is dissolved and removed, thereby obtaining a porous body 45 of silicon oxide derived from TEOS. The subsequent steps can be the same as in the third embodiment. Also in Embodiment 4, the same flat display device as that shown in FIGS. 9 to 11 can be configured.

Embodiment 6

Embodiment 6 relates to a manufacturing method according to the second configuration of the present invention and a flat panel display device according to the second configuration of the present invention obtained thereby. Embodiment 6 is described below with reference to FIGS. 12 and 13.

[Process-600]

The formation of the insulating layer 12 is performed in the same manner as in the [Step-200] of the second embodiment. Next, the gate electrode 13 is formed on the insulating layer 12. The gate electrode 13 may be formed by forming the gate electrode conductive material layer 13 'in the same manner as described in the second embodiment, and then patterning the gate electrode conductive material layer 13' by an etching method or the like. You may form in stripe form from the beginning according to the printing method. Next, for example, a second insulating layer 46 having a thickness of about 1 μm made of SiO ₂ is formed on the gate electrode 13 and the insulating layer 12 by the CVD method. Further, a TiN layer having a thickness of about 0.07 μm is formed on the entire surface of the second insulating layer 46 by a sputtering method, and a conductive material layer for forming a converging electrode (conductive material layer 47 'for condensing electrode) is formed. In addition, a getter formation layer 43 is formed on the conductive material layer 47 'for the converging electrodes in the same manner as in [Step-200] of the second embodiment (see Fig. 12A).

[Process-610]

Next, as shown in FIG. 12B, the getter formation layer 43 and the conductive material layer 47 ′ for the converging electrodes are patterned, whereby the getter 43B of the second type is formed on the upper surface of the converging electrode 47. Can be formed. This patterning can be performed, for example, by etching the getter formation layer 43 and the conductive material layer 47 'for the converging electrode using an etching mask (not shown).

[Process-620]

Next, as shown in FIG. 13A, the second insulating layer 46, the gate electrode 13, and the insulating layer 12 are patterned, and the opening 14 in which the cathode electrode 11 is exposed at the bottom thereof. To form. Formation of the opening part 14 can be performed by etching the 2nd insulating layer 46, the gate electrode 13, and the insulating layer 12 using an etching mask (not shown), for example. At this time, by performing the above patterning on the inside of the opening formed in the converging electrode 47, the end of the converging electrode 47 can be retracted from the end of the gate electrode 13. The original purpose of the converging electrode 47 is to correct only the trajectory of electrons which are about to deviate greatly from the direction perpendicular to the cathode electrode. If the opening diameter of the converging electrode 47 is too small, the electron emission efficiency of the electron-emitting device There is a fear that this will be reduced. By the way, it is very preferable that the end of the converging electrode 47 retreats from the end of the gate electrode 13 because only necessary converging effects can be obtained without disturbing electron emission.

[Process-630]

Next, the same steps as those in [Step-230] to [Step-250] of the second embodiment are performed, and the cone-shaped electron emission section 15 is placed on the cathode electrode 11 located at the bottom of the opening 14. After the formation, if the sidewall surfaces of the openings 14 formed in the insulating layer 12 and the second insulating layer 46 are retracted under isotropic etching conditions, the electron-emitting device shown in Fig. 13B can be completed. . Further, by carrying out the same steps as in the [Step-260] of the second embodiment, the same flat display as that described in the second embodiment can be obtained in the sixth embodiment. In such a flat-panel display device, the optical crosstalk between pixels is reduced by increasing the convergence of the emission electron trajectory, so that it is possible to further refine the pixels and to achieve high definition of the display screen. As the getter, not only the getter 43B of the second type but also the getter 43A of the first type and the getter 43C of the third type can be used.

Embodiment 7

Embodiment 7 relates to a manufacturing method according to a third configuration of the present invention and a flat panel display device according to the first configuration of the present invention obtained thereby. Hereinafter, Embodiment 7 will be described with reference to FIG. 14.

[Process-700]

The formation of the insulating layer 12 is performed in the same manner as in the [Step-200] of the second embodiment. Next, as shown in FIG. 14A, the gate electrode 13 is formed on the insulating layer 12. After forming the gate electrode conductive material layer 13 'described in Embodiment 2, the gate electrode 13 may be formed by patterning the gate electrode conductive material layer 13' by an etching method or the like, and the printing method. In accordance with this, it may be formed in a stripe shape from the beginning.

[Process-710]

Next, as shown in FIG. 14B, a getter 43B of a second type is formed on the gate electrode 13. The getter 43B of the second type may be formed by a method that can be selectively formed only on the gate electrode 13, and is formed by patterning the getter formation layer 43 after forming the getter formation layer 43 on the entire surface. You may also Since the subsequent steps can be the same as in [Step-220] to [Step-260] in Embodiment 2, detailed descriptions are omitted. Also in the seventh embodiment, the same flat display device as that shown in FIGS. 9 to 11 can be configured.

Three types of formation patterns of a getter are shown in FIG. FIG. 15A shows the getter 43B of the second type which extends from the gate electrode 13 onto the insulating layer 12. FIG. 15B shows the getter 43B of the second type formed on the insulating layer 12 between the adjacent gate electrodes 13. 15C shows a getter 43B of a second type formed over the entire surface on the gate electrode 13 and the insulating layer 12. FIG. As the getter, not only the getter 43B of the second type but also the getter 43A of the first type and the getter 43C of the third type can be used. The formation pattern shown in FIG. 15C is a formation pattern that can maximize the effective area of the getter. However, in order to prevent a short circuit between adjacent gate electrodes 13, it is necessary for the support member to have insulation. Examples of the supporting member having insulation include a structure made of an insulating material layer, a polycrystalline silicon layer, and substantially hemispherical silicon particles, a porous body 45 made of an insulating material, an insulating material layer, and a conductive porous body 45 formed thereon. Can be. In any case, in the manufacturing method according to the third aspect of the present invention, since the gate electrode 13 and the getter are formed by different processes, examples of those in which the patterning of the gate electrode 13 and the getter differ from each other are the third. It can be said to be an example which used the characteristic of the manufacturing method regarding a structure more effectively.

Embodiment 8

Embodiment 8 relates to a manufacturing method according to a fourth configuration of the present invention and a flat panel display device according to the second configuration of the present invention obtained thereby. Only the part different from Embodiment 6 is demonstrated referring FIG.

[Process-800]

The formation of the second insulating layer 46 is performed in the same manner as in the [Step-600] of the sixth embodiment. Next, a converging electrode 47 is formed on the second insulating layer 46 (see Fig. 16A). After the converging electrode 47 forms the converging electrode conductive material layer 47 'for forming the converging electrode described in Embodiment 6, the condensing electrode conductive material layer 47' is patterned by an etching method or the like. It may form by forming and may form in stripe form from the beginning according to the printing method.

[Process-810]

Next, as shown in FIG. 16B, a getter 43B of a second type is formed on the convergence electrode 47. The getter 43B of the second type may be formed by a method that can be selectively formed only on the converging electrode 47, and is formed by patterning the getter forming layer 43 after forming the getter forming layer 43 on the entire surface. You may also The subsequent steps can be the same as in the [Step-620] to [Step-630] in the sixth embodiment, and detailed description thereof is omitted. Also in the eighth embodiment, the same flat display device as that described in FIG. 6 can be configured.

Three modifications of the formation pattern of the getter are shown in FIG. 17. FIG. 17A shows the getter 43B of the second type extending from the converging electrode 47 onto the second insulating layer 46. FIG. 17B shows the getter 43B of the second type formed on the second insulating layer 46 between the adjacent converging electrodes 47. 17C shows a getter 43B of a second type formed over the entire surface of the convergence electrode 47 and the second insulating layer 46. As the getter, not only the getter 43B of the second type but also the getter 43A of the first type and the getter 43C of the third type can be used. The formation pattern shown in FIG. 17C is a formation pattern that can maximize the effective area of the getter. However, in order to prevent a short circuit between adjacent converging electrodes 47, it is necessary for the support member to have insulation. Examples of the supporting member having insulation include a structure made of an insulating material layer, a polycrystalline silicon layer, and substantially hemispherical silicon particles, a porous body 45 made of an insulating material, an insulating material layer, and a conductive porous body 45 formed thereon. Can be. In any case, in the manufacturing method according to the fourth configuration, since the convergence electrode 47 and the getter are formed by different processes, examples of those in which the convergence electrode 47 and the getter pattern differ from each other are related to the fourth configuration. It can be said that the feature of the manufacturing method was used more effectively.

Embodiment 9

A ninth embodiment relates to a manufacturing method according to a fifth configuration of the present invention and a flat panel display device according to the third configuration of the present invention obtained thereby. In embodiment 9, the gate electrode is at least partially made of a gas trapping material. Specifically, in Embodiment 9, the gas trapping material constituting the gate electrode 13 is a zirconium-aluminum alloy (Zr-Al alloy), and the gate electrode 13 has a single layer structure. Embodiment 9 is described below with reference to FIG. 18.

[Process-900]

First, for example, a cathode electrode 11 composed of a stripe-type cathode electrode conductive material layer made of niobium Nb is formed on a support 10 made of glass, and then an insulating layer made of SiO ₂ is formed on the entire surface. (12) and formed on the insulating layer (12) a gate electrode (113) composed of a conductive material layer for a star life gate electrode made of a zirconium-aluminum alloy (Zr-Al alloy), which is a gas trapping material. do. Formation of the gate electrode 113 can be performed, for example by a sputtering method, a lithography technique, and a dry etching technique. Next, an opening 14 is formed in the gate electrode 113 and the insulating layer 12 by the RIE (reactive ion-etching) method, and the cathode electrode 11 is exposed at the bottom of the opening 14 (FIG. 18). (A)). The cathode electrode 11 may be a single material layer or may be configured by stacking a plurality of material layers. For example, in order to cover the nonuniformity of the electron emission characteristic of each electron emission part formed in a later process, the surface layer part of the cathode electrode 11 can be comprised with the material whose electrical resistivity is higher than remainder. The structure of such a cathode electrode can be applied to the electron-emitting device in another embodiment.

[Process-910]

Subsequently, by carrying out the same steps as in [Step-230] to [Step-250] of Embodiment 2, the spin type electron-emitting device having the structure shown in Fig. 18B can be completed.

19 and 20 show a modification of the gate electrode.

The gate electrode shown in Fig. 19A is not a single layer structure, and for example, a first layer 113A made of a conductive material called nickel (Ni) and a second layer 113B made of a gas trapping material. It has a structure. And although the 1st layer 113A may be comprised by insulating materials, such as a glass material, in this case, it is necessary for the 2nd layer 113B to have electroconductivity.

The gate electrode shown in Fig. 19B includes a first layer 113A made of a conductive material or a gas trapping material, a second layer 113B made of an insulating material, and a third layer 113C made of a gas trapping material ( Gas trapping layer).

The gate electrode shown in Fig. 20A has a lamination structure of the first layer 113A made of a conductive material and the second layer 113B made of a gas trapping material, but with the gate electrode shown in Fig. 19A; Alternatively, the size of the upper opening end of the opening 14 formed in the first layer has a structure smaller than the size of the lower opening end. When electrons emitted from the electron emission section 15 enter the insulating layer 12 near the first layer 113A, gas may be emitted from the portion of the insulating layer. Even if the path is distorted to the inner wall side of the first layer 113A, there is less possibility that electrons enter the insulating layer 12, and gas emission from the insulating layer 12 can be prevented.

The gate electrode shown in FIG. 20B also has a laminated structure of the first layer 113A made of a conductive material and the second layer 113B made of a gas trapping material layer, but shown in FIG. 19A. Unlike the gate electrode, the size of the upper opening end of the opening 14 formed in the first layer is larger than that of the lower opening end.

The gate electrode shown in FIG. 20C also has a laminated structure of the first layer 113A made of a conductive material and the second layer 113B made of a gas trapping material, but the gate electrode shown in FIG. 19A. In contrast, the size of the upper opening end of the opening 14 formed in the first layer is larger than that of the lower opening end, and further, the sidewall of the opening end of the first layer 113A is covered with the second layer 113B. With such a structure, the open end side wall of the opening 14 serving as the passage of electrons in the gate electrode is covered with the second layer 113B made of the mode gas trapping material, and the electrons move to the open end side wall. Even if incident, the incident part of the electrons is inevitably a gas trapping material, so that no gas is emitted from the gate electrode.

In the gate electrodes shown in FIGS. 19A to 19C, the sidewalls of the open end of the inclined first layer 113A can be obtained by optimizing the etching conditions of the first layer 113A.

Next, with reference to FIG. 21, the effect that the gate electrode 113 contains a gas trapping material is demonstrated in more detail.

21A shows an example of pressure distribution in the case where electrons collide with the phosphor layer 21 to emit gas molecules, and the pressure rises to about 1 Pa in the vicinity of the phosphor layer 21. Even when gas molecules or the like are released in the vicinity of the phosphor layer 21 and the pressure is increased, the released gas molecules and the like are trapped by the gas trapping material of the gate electrode 113, so that they are close to the electron emission section 15. As a result, the pressure of the vacuum layer is lowered, and local discharge and the like due to the release of gas molecules and the like are prevented, so that adverse effects on the electron emission unit 15 are prevented.

In FIG. 21B, for example, gas molecules or the like emitted by electrons colliding with the phosphor layer 21 reach the electron emission unit 15, and gas molecules or the like are emitted from the electron emission unit 15. The pressure distribution example in the vicinity of the electron emission part 15 in the case was shown. The electron-emitting portion 15 near the (H ₁₎ Even when gas molecules, etc. are released from, the released gas molecules, etc., so trapping the gas trapping material of the gate electrode 113, near the electron-emitting section 15 (H ₁₎ The increase in the pressure distribution at is about 2 × 10 ⁻⁴ Pa, for example, and does not become high enough to adversely affect the electron emitting portion 15.

In FIG. 21C, for example, the gas molecules emitted when the electrons collide with the phosphor layer 21 are distorted from the electron emission unit 15 toward the insulating layer 12, and the emitted electrons are released from the insulating layer 12. ) impinges on the side wall (H ₂₎ of, and showed a pressure distribution example of a case in which the released gas molecules, etc. from the insulating layer 12. Even if gas molecules or the like are emitted from the sidewall H ₂ of the insulating layer 12, the released gas molecules and the like are trapped by the gate electrode 113, so that an increase in the pressure distribution on the wall surface H ₂ is described. For example, the pressure decreases as it is about 2 x 10 &lt; ^-3 &gt; Pa and near the electron emission boom 15, thereby preventing adverse effects on the electron emission portion 15. As shown in FIG.

Embodiment 10

A tenth embodiment relates to a manufacturing method according to a sixth aspect of the present invention and a flat panel display device according to the fourth aspect of the present invention obtained thereby. In embodiment 10, the converging electrode is at least partially made of a gas trapping material. Specifically, in Embodiment 10, the gas trapping material constituting the convergence electrode 147 is a zirconium-aluminum alloy (Zr-Al alloy), and the convergence electrode 147 has a single layer structure. Embodiment 10 is described below with reference to FIG. 22.

[Process-1000]

The formation of the insulating layer 12 is performed in the same manner as in the [Step-200] of the second embodiment. Next, the gate electrode 13 is formed on the insulating layer 12. The gate electrode 13 may be formed by forming the gate electrode conductive material layer 13 'in the same manner as described in the second embodiment, and then patterning the gate electrode conductive material layer 13' by an etching method or the like. You may form in stripe form from the beginning according to the printing method. Next, for example, a second insulating layer 46 having a thickness of about 1 μm made of SiO ₂ is formed on the gate electrode 13 and the insulating layer 12 by the CVD method. A stripe type convergence electrode 147 made of a zirconium-aluminum alloy (Zr-Al alloy), which is a gas trapping material, is formed on the second insulating layer 46. Formation of the convergence electrode 147 can be performed according to the sputtering method, the lithography technique, and the dry etching technique, for example (see FIG. 22A).

[Step-1010]

Next, by carrying out the same steps as those in [Step-620] to [Step-630] of the sixth embodiment, the spin type electron-emitting device having the structure shown in Fig. 22B can be completed.

The convergence electrode 147 can also have the same structure as shown in FIGS. 19 and 20.

Embodiment 11

Embodiment 11 relates to a manufacturing method according to a seventh aspect of the present invention and a flat panel display device according to the fifth aspect of the present invention obtained thereby. In the flat display device of Embodiment 11, the electron-emitting device is

(A) a spacer 12 made of an insulating material disposed on a support 10,

(B) a plurality of openings 214A formed therein, the gate electrode 213 composed of a gas trapping material layer 213A at least partially formed of a gas trapping material, and

(C) The electron emitting portion 15C formed on the support 10

Made up of

The gas trapping material layer 213A is fixed to contact the top surface of the spacer 12 and to have the opening 214A above the electron emitting portion 15C.

The gas trapping material layer 213A is fixed to the top surface of the spacer with a thermosetting adhesive (for example, an epoxy adhesive). 23 is a schematic partial cross-sectional view of the vicinity of the end of the support 10, both ends of the stripe-type gas trapping material layer 213A may be fixed to the periphery of the support 10. have. More specifically, for example, the projection 216 is formed in advance on the periphery of the support 10, and a thin film of the same material as the material constituting the gas trapping material layer 213A on the top surface of the projection 216 ( 217). Then, in the state where the stripe-type gas trapping material layer 213A is fixed, the thin film 217 is welded using, for example, a laser. And the protrusion part 216 can be formed simultaneously with formation of a spacer, for example.

As the gas trapping material layer 213A in Embodiment 11, a laminated structure of a first layer made of nickel (Ni) conductive material and a second layer made of gas trapping material was used. The gas trapping material layer 213A is not limited to the laminated structure, but may be a single layer structure. In this case, as the material constituting the gas trapping material layer 213A, for example, titanium (Ti) and titanium An alloy containing titanium, such as a zirconium- vanadium-iron (Ti-Zr-V-Fe) alloy, carbon (C) or barium (Ba) is mentioned. And when using a laminated structure as the gas trapping material layer 213A, making the second layer made of the gas trapping material toward the cathode electrode 211 maintains the vacuum exhaust state around the cathode electrode 211 better. It is preferable from a viewpoint. That is, it is preferable to reverse the stacking order of the first layer 113A and the second layer 113B in FIGS. 19A, 20A, B, and C. FIG.

The electron emission device in Embodiment 11 was used as a planar electron emission device. This planar electron-emitting device is, for example, a stripe-shaped cathode electrode 211 formed on a support 10 made of glass, an insulating layer 12 (spacer) formed on the support 10 and the cathode electrode 211. Corresponding to), an opening having a stripe-shaped gate electrode 213 formed on the insulating layer 12, and a cathode electrode 211 exposed through the gate electrode 213 and the insulating layer 12. 214). The cathode electrode 211 extends in the paper vertical direction of FIG. 23, and the gate electrode 213 extends in the left and right direction of the paper of FIG. 23. Here, the part of the cathode electrode 211 exposed at the bottom of the opening portion 214 corresponds to the electron emitting portion 15C and also corresponds to the electron emitting layer.

Hereinafter, an example of the manufacturing method of the electron emission element in Embodiment 11 is demonstrated.

[Step-1100]

First, the cathode electrode 211 which functions as the electron emission part 15C is formed on the support body 10. Specifically, after forming the cathode material conductive material layer which consists of chromium (Cr) by the sputtering method on the support body 10, the cathode material conductive material layer is patterned according to a lithography technique and a dry etching technique. Thereby, the cathode electrode 211 comprised from the stripe-type cathode electrode conductive material layer can be formed on the support body 10.

[Step-1110]

Next, an insulating layer 12 (corresponding to a spacer) made of SiO ₂ , for example, is formed on the entire surface of the support 10 and the cathode electrode 211 by, for example, CVD. And the insulating layer 12 can also be formed from glass paste by the screen printing method.

[Step-1120]

Thereafter, openings 214 are formed in insulating layer 12 using lithographic and etching techniques. Alternatively, when the insulating layer 12 is formed by, for example, screen printing, the openings 214 may be formed. In this way, the bottom of the opening 214 can expose the surface of the cathode electrode 211 corresponding to the electron emission portion. Here, the insulating layer 12 corresponds to a spacer.

[Step-1130]

Thereafter, the stripe-shaped gas trapping material layer 213A having the plurality of openings 214A is disposed in a state supported by the insulating layer 12 as a spacer so that the openings 214A are positioned above the electron emission section. Further, the stripe-type gas trapping material layer 213A is disposed in the second direction different from the first direction, and thus, the stripe-type gas trapping material layer 213A is formed, so that the plurality of openings 214A are formed. The branch positions the gate electrode 213 above the electron emission portion.

And the strip | belt-shaped material layer which comprises the gate electrode 213 can be produced, for example by the following method. That is, for example, a nickel plate serving as the first layer 113A is prepared, and a gas trapping material (for example, an alloy containing titanium such as titanium or titanium-zirconium-vanadium-iron alloy) in the nickel plate Is applied or deposited, for example, to form the second layer 113B. Thereafter, openings 214A having a desired shape are formed in the first layer 113A and the second layer 113B. And the opening part 214A may be previously formed in the 1st layer 113A, and the 2nd layer 113B may be formed. The formation of the second layer 113B is performed in a vacuum atmosphere or argon to prevent the second layer 113B from capturing unnecessary substances before integrating the first panel P ₁ and the second panel P ₂ . It is preferable to perform in inert gas atmosphere, such as (Ar) and helium (He).

The gas trapping material layer 213A may be made of a gas trapping material having a characteristic of increasing gas trapping ability as the temperature increases, for example, zirconium-aluminum and titanium-zirconium-vanadium-iron alloy. 24 shows a relationship between the temperature of the zirconium-aluminum alloy (Al-Zr alloy) and the vacuum evacuation speed of the internal space in the flat display device. In FIG. 24, the horizontal axis represents temperature (° C.), and the vertical axis represents exhaust velocity (the rate at which the Al-Zr alloy captures gas molecules and the like in the internal space, and the unit is ml / sec · cm 2). As is also apparent from Fig. 24, the Al-Zr alloy has a characteristic that the exhaust velocity is increased (that is, the gas trapping ability is increased) as the temperature is increased. Therefore, when the gate electrode 213A contains the Al-Zr alloy, the electrons emitted from the electron emission unit 15C are distorted in the direction of the gate electrode 213 to collide with the gate electrode 213, thereby causing the gate electrode ( Even if the temperature of 213 rises, the effect of improving the vacuum evacuation speed at the gate electrode 213 can be expected, and thus, it becomes possible to prevent the unstable operation of the flat panel display device due to the temperature rise. In consideration of actively using such an effect, for example, when the gate electrode 213 has a structure in which the first layer and the second layer are laminated, the second layer 113B is more than the first layer 113A. It is preferable that it is a shape in which an electron easily collides with the side. For example, as shown in FIG. 20C, when the first layer 113A is covered by the second layer 113B, the incident part of the electrons necessarily becomes the second layer 113B, and the temperature The improvement effect of the vacuum exhaust speed by a raise can be anticipated. And in order to activate Al-Zr alloy and to have a vacuum exhaust action, it is necessary to heat at least 300 degreeC or more. Activation is preferably performed by heat treatment in the vacuum atmosphere or in an inert gas atmosphere such as argon or helium after the production of the gas trapping material layer 213A before [Step-1130]. This heat treatment can be performed by, for example, irradiating an electron beam to the two layers 113B. Moreover, it can also be performed by introducing the gas trapping material layer 213A into the high heat furnace generally used.

Such a method of forming a gate electrode can be applied to the manufacture of various electron-emitting devices.

Embodiment 12

Embodiment 12 is a variation of embodiment 11. The electron emitting device according to the twelfth embodiment is different from the electron emitting device according to the eleventh embodiment as shown in FIG. 25 (A) in a schematic cross sectional view between the cathode electrode 211 and the cathode electrode 211. The partition 212 (equivalent to a spacer) is formed. 25B is a schematic layout view of the cathode electrode 211, the gas trapping material layer 213A and the gate electrode 213, and the partition wall 212. In the case where the laminated structure is used as the stripe-type gas trapping material layer 213A, it is better to set the second layer made of the gas trapping material to the cathode electrode 211 side to obtain a better vacuum evacuation state around the cathode electrode 211. It is preferable from a viewpoint of maintaining in a state.

The gas trapping material layer 213A is fixed to the top surface of the partition wall 212 with a thermosetting adhesive (for example, an epoxy adhesive). 23, the both ends of the stripe-type gas trapping material layer 213A may be fixed to the periphery of the support 10. As shown in FIG. More specifically, for example, the projection 216 is formed in advance on the periphery of the support 10, and a thin film of the same material as the material constituting the gas trapping material layer 213A on the top surface of the projection 216 ( 217). Then, in the state where the stripe-type gas trapping material layer 213A is extended, the thin film 217 is welded using, for example, a laser.

The electron-emitting device in Embodiment 12 can be manufactured, for example, by the manufacturing method described below.

[Process-1200]

First, the partition 212 which comprises stripe-shaped spacer (gate electrode support part) is formed on the support body 10 by the sandblasting method, for example.

[Step-1210]

Thereafter, an electron emission portion is formed on the support 10. Specifically, the mask layer which consists of a resist material is formed in the whole surface by the spin coating method, and the mask layer of the area | region part which should form the cathode electrode between the partition 212 and the partition 212 is removed. Thereafter, similarly to [Step-1100], a cathode electrode conductive material layer made of chromium (Cr) is formed on the entire surface by a sputtering method, and then a mask layer is allowed. As a result, the conductive material layer for the cathode electrode formed on the mask layer is also removed, leaving the cathode electrode 211 serving as the electron emission portion between the partition 12 and the partition 12.

[Step-1220]

Thereafter, the stripe-shaped gas trapping material layer 213A having the plurality of openings 214A is disposed in a state supported by the partition wall 212 as a spacer so that the plurality of openings 214A are positioned above the electron emission section. Therefore, the gate electrode 213 composed of the stripe-type gas trapping material layer 213A and having the plurality of openings 214A is positioned above the electron emission section. The arrangement method of the stripe-type gas trapping material layer 213A may be performed as described above.

Such a method of forming a gate electrode can also be applied to the manufacture of various electron-emitting devices.

The planar shape of the opening 214A of the electron-emitting device in Embodiment 11 or Embodiment 12 is not limited to circular. Modifications of the shape of the openings 214A formed in the gas trapping material layer 213A are illustrated in FIGS. 26A, 26B, and 14C.

Embodiment 13

In the thirteenth to twenty-seventh embodiments, electron-emitting devices having various configurations and structures, and methods of manufacturing the same, all of these electron-emitting devices can be applied to the flat panel display described in Embodiments 1 through 12. . That is, in the thirteenth to twenty-seventh embodiments, the gate electrode and the getter in the electron-emitting device constituting the flat panel display device according to the first configuration, and the electrons constituting the flat display device according to the third and fifth configurations Any of the gate electrodes in the emitting device can be applied, and in the following description, these gate electrodes / getters or gate electrodes are collectively shown as gate electrodes 313 or 313B. The gate electrode 313 can be formed and manufactured by the method described in Embodiment 1-12. In the thirteenth to twenty-seventh embodiments, the convergence electrodes described in the sixth, eighth, and tenth embodiments may be further formed.

As the electron-emitting device, in addition to the spin type described above (an electron-emitting device formed on the portion of the cathode electrode where the conical electron-emitting part is located at the bottom of the opening), a crown type (cathode electrode having the crown-shaped electron-emitting part located at the bottom of the opening) Electron-emitting device formed on the part), flat (electron-emitting device formed on the part of the cathode electrode having an approximately flat electron-emitting part located at the bottom of the opening), planar electron-emitting device emitting electrons from the surface of the flat cathode electrode, unevenness And a crater type electron emitting device and an edge type electron emitting device for emitting electrons from the convex portion of the formed cathode electrode surface.

Hereinafter, first, a crown type electron emitting device and a manufacturing method thereof will be described.

A schematic partial cross-sectional view of the crown electron-emitting device is shown in Fig. 29A, and a schematic perspective view in which part of the crown is cut out is shown in Fig. 29B. The crown type electron-emitting device includes a cathode electrode 11 formed on the support 10, an insulating layer 12 formed on the support 10 and the cathode electrode 11, and a gate electrode formed on the insulating layer 12. 313 and an opening 14 penetrating through the insulating layer 12 and a crown-shaped electron emitting portion 15A formed on the portion of the cathode electrode 11 located at the bottom of the opening 14. It is.

Hereinafter, a method of manufacturing a crown type electron emitting device will be described with reference to FIGS. 27 to 29 which are schematic partial cross-sectional views of a support and the like.

[Step-1300]

First, for example, on the support 10 made of glass, a cathode electrode 11 composed of a conductive material layer for a striped cathode electrode is formed. The cathode electrode 11 extends in the left and right directions of the drawing of the drawing. The stripe cathode electrode conductive material layer can be formed by, for example, depositing an ITO film on the support 10 with a thickness of about 0.2 μm by a sputtering method and then patterning the ITO film. The cathode electrode 11 may be a single material layer or may be constituted by stacking a plurality of material layers. For example, in order to cover the non-uniformity of electron emission characteristics of each electron emission portion formed by a later process, the cathode The surface layer portion of the electrode 11 can be made of a material having a higher electrical resistivity than the remainder. Next, specifically, the insulating layer 12 is formed on the support body 10 and the cathode electrode 11 on the whole surface. Here, as an example, the glass paste is screen printed on the entire surface with a thickness of about 3 μm. Next, in order to remove the water | moisture content and the solvent contained in the insulating layer 12, and to planarize the insulating layer 12, for example, it is 100 degreeC, 10 minutes of plasticity, and 500 degreeC, 20 minutes of main baking. The baking of two steps is performed. The SiO ₂ film may be formed by, for example, plasma CVD, instead of screen printing using the glass paste as described above.

Next, a gate electrode 313 is formed on the insulating layer 12 (see Fig. 27A). The gate electrode 313 extends in the vertical direction in the drawing plane. The gas trapping material constituting the gate electrode 313 can be the same as the spin type electron-emitting device described above. The direction in which the projection image of the gate electrode 313 extends is 90 ° with the direction in which the projection image of the striped cathode electrode 11 extends.

[Step-1310]

Next, the gate electrode 313 and the insulating layer 12 are etched according to the RIE method using, for example, an etching mask EM made of a photoresist material, and the gate electrode 313 and the insulating layer 12 are etched. ), An opening 14 is formed to expose the cathode electrode 11 at the bottom of the opening 14 (see FIG. 27B). The diameter of the opening part 14 shall be about 2-50 micrometers.

[Step-1320]

Next, the etching mask EM is removed, and a release layer 51 is formed on the gate electrode 313, the insulating layer 12, and on the sidewall surface of the opening 14 (FIG. 28A). Reference). In forming such a peeling layer 51, the photoresist material is apply | coated to the whole surface by a spin coating method, for example, and patterning which removes only a part of bottom part of the opening part 14 is performed. At this point, the diameter of the opening 14 is reduced to about 1 to 20 mu m.

[Step-1330]

Next, as shown to FIG. 28 (B), the electroconductive composition layer 52 which consists of a composition raw material is formed in the whole surface. The composition raw material used here contains 60 weight% of graphite particles with an average particle diameter of about 0.1 micrometer as electroconductive particle, and 40 weight% of water glass of No. 4 as a binder. This composition raw material is spin-coated to the whole surface, for example on 1400 rpm and 10 second conditions. The surface of the conductive composition layer 52 in the opening 14 rises along the side wall surface of the opening 14 due to the surface tension of the composition raw material, and concave toward the center of the opening 14. Thereafter, plasticity for removing moisture contained in the conductive composition layer 52 is performed at 400 ° C. for 30 minutes in the air, for example.

In the composition raw material, the binder (1) itself may be a dispersion medium of electroconductive particles, (2) may coat the electroconductive particle, and (3) may disperse | distribute or melt | dissolve in a suitable solvent, and may comprise the dispersion medium of electroconductive particle. . A typical example of the case of (3) is water glass, and Nos. 1 to 4 or equivalents thereof specified in Japanese Industrial Standard (JIS) K1408 can be used. Nos. 1 to 4 show four steps according to the difference between the number of moles of silicon oxide (SiO 2) (about 2 to 4 moles) with respect to 1 mole of sodium oxide (Na ₂ O) which is a component of water glass. It is a grade, and each differs greatly in viscosity. Therefore, when using the water glass in the lift-off process, considering the type and content of the conductive particles to be dispersed in the water glass, the affinity of the release layer 51, the aspect ratio of the opening 14, etc. It is preferable to select glass or to prepare and use water glass which is the same as these grades.

Since the binder is generally inferior in conductivity, when the content of the binder is excessive with respect to the content of the conductive particles in the conductive composition, the electrical resistance value of the electron emission portion 15A to be formed is increased, and the electron emission is not performed smoothly. There is concern. Thus, for example, for example, a composition raw material obtained by dispersing carbon-based material particles as conductive particles in water glass, the ratio of the carbon-based material particles to the total weight of the composition raw material is the transfer resistance value of the electron emitting portion 15A, It is preferable to select in the range of 30 to 95 weight% in consideration of characteristics, such as the viscosity of a composition raw material, adhesiveness of electroconductive particles, and the like. By selecting the proportion of the carbon-based material particles within such a range, it is possible to sufficiently lower the electric resistance value of the electron-emitting portion 15A to be formed and to maintain good adhesion between the carbon-based material particles. However, in the case where alumina particles are mixed with the carbon-based material particles as the conductive particles, the adhesion between the conductive particles tends to decrease, so that the proportion of the carbon-based material particles is preferably increased in accordance with the content of the alumina particles. It is especially preferable to make it 60 weight% or more. And the composition raw material may contain additives, such as a dispersing agent for stabilizing the dispersion state of electroconductive particle, a pH adjuster, a drying agent, a hardening | curing agent, and an antiseptic | preservative. And you may use the composition raw material which disperse | distributes the powder which coat | covered electroconductive particle with the film of binder (binder) in a suitable dispersion medium.

As an example, when the diameter of the crown-shaped electron emitting portion 15A is usually 1 to 20 µm, and carbon-based material particles are used as the conductive particles, the particle diameter of the carbon-based material particles is usually in the range of 0.1 µm to 1 µm. It is desirable to. By selecting the particle diameter of the carbon-based material particles in this range, a sufficiently high mechanical strength is provided at the edge portion of the crown-shaped electron emission portion 15A, and the adhesion of the electron emission portion 15A to the cathode electrode 11 is improved. It becomes good.

[Step-1340]

Next, as shown to FIG. 28 (C), the peeling layer 51 is removed. Peeling is performed by immersing in 2weight% of sodium hydroxide aqueous solution for 30 second. At this time, you may peel while applying an ultrasonic vibration. Accordingly, the portion of the conductive composition layer 52 on the release layer 51 together with the release layer 51 is removed, and the portion of the conductive composition layer 52 on the cathode electrode 11 exposed to the bottom of the opening 14 is removed. Only remains This remaining portion becomes the electron emitting portion 15A. The shape of the electron emitting portion 15A is concave and the surface is concave toward the center portion of the opening portion 14 to become a crown shape. The state at the time of [Process-1340] complete | finished is shown in FIG. FIG. 29B is a schematic perspective view of a part of the electron-emitting device, and FIG. 29A is a schematic partial cross-sectional view taken along the line A-A of FIG. 29B. In FIG. 29B, the insulating layer 12 and a part of the gate electrode 313 are cut out so that the entire electron emitting portion 15A is visible. In one electron emission region (duplicate region), it is sufficient to form about 5 to 100 electron emission portions 15A. And the binder exposed to the surface of the electron emission part 15A may be removed by etching so that the particle diameter of electroconductive particle may be reliably exposed to the surface of the electron emission part 15A.

[Step-1350]

Next, the electron emitting portion 15A is fired. After baking, it performs on 400 degreeC and the conditions for 30 minutes in a drying atmosphere. In addition, what is necessary is just to select baking temperature according to the kind of binder contained in a composition raw material. For example, when the binder is an inorganic material such as water glass, the heat treatment may be performed at a temperature at which the inorganic material can be fired. What is necessary is just to heat-process at the temperature which can harden | cure a thermosetting resin, when a binder is a thermosetting resin. However, in order to maintain the adhesiveness of electroconductive particle, it is preferable to heat-process at the temperature which a thermosetting resin does not have to be excessively decomposed or carbonized. Even if any binder is used, the heat treatment temperature needs to be a temperature at which no damage or defect occurs to the gate electrode, the cathode electrode, and the insulating layer. The heat treatment atmosphere is preferably an inert gas atmosphere so that the electrical resistivity of the gate electrode and the cathode electrode is increased by oxidation, or defects or damages are not caused to the gate electrode or the cathode electrode. And when thermoplastic resin is used as a binder, heat processing may not be needed.

Embodiment 14

A partial schematic cross sectional view of the flat electron-emitting device is shown in Fig. 30C. The flat electron-emitting device is, for example, the cathode electrode 11 formed on the support 10 made of glass, the insulating layer 12 formed on the support 10 and the cathode electrode 11, the insulating layer 12 A flat electron emission portion formed on an opening 14 penetrating through the gate electrode 313, the gate electrode 313 and the insulating layer 12 formed thereon, and a portion of the cathode electrode 11 positioned at the bottom of the opening 14. It consists of 15B. Here, the electron emission section 15B is formed on the stripe cathode electrode 11 extending in the vertical direction in the plane of Fig. 30C. In addition, the gate electrode 313 extends in the left and right directions of the paper in FIG. 30B. The cathode electrode 11 and the gate electrode 313 are made of chromium (Cr). The electron emission part 15B is specifically comprised by the thin layer which consists of graphite powder. In addition, a resistor layer 60 made of SiC is formed between the cathode electrode 11 and the electron emitting portion 15B for stabilizing the operation of the electron emitting device and for uniformizing the electron emission characteristics. In the flat electron-emitting device shown in Fig. 30C, the resistor layer 60 and the electron emission section 15B are formed over the entire surface of the cathode electrode 11, but are not limited to such a structure. At least, the electron emission part 15B should just be formed in the bottom part of the opening part 14. As shown in FIG.

Hereinafter, a method of manufacturing a flat electron emission device will be described with reference to FIG. 30 which is a schematic partial cross-sectional view of a support or the like.

[Process-1400]

First, the cathode material conductive material layer which consists of chromium (Cr) is formed on the support body 10 by a sputtering method, and the cathode material conductive material layer is patterned according to a lithography technique and an etching technique. Thereby, the cathode electrode 11 comprised from the stripe-type cathode electrode conductive material layer can be formed on the support body 10 (refer FIG. 30 (A)). The cathode electrode 11 extends in the vertical direction of the page of FIG. 30.

[Process-1410]

Next, the electron emission portion 15B is formed on the cathode electrode 11. Specifically, first, a resistor layer 60 made of SiC is formed on the entire surface by a sputtering method, and then an electron emitting portion 15B made of graphite powder coating is formed on the resistor layer 60 by spin coating. The electron emission section 15B is dried. Thereafter, the electron emission section 15B and the resistor layer 60 are patterned according to a known method (see Fig. 30 (B)). Electrons are emitted from the electron emission unit 15B.

[Step-1420]

Next, an insulating layer 12 is formed on the entire surface. Specifically, the insulating layer 12 made of SiO ₂ is formed on the electron emitting portion 15B and the support 10 by, for example, a sputtering method. The insulating layer 12 can be formed by screen printing a glass paste or by forming a SiO ₂ layer by CVD. Thereafter, a stripe gate electrode 313 is formed on the insulating layer 12.

[Step-1430]

Next, an opening 14 is formed in the gate electrode 313 and the insulating layer 12, and the electron emission portion 15B is exposed at the bottom of the opening 14. Thereafter, the mask for etching is removed and heat treatment is performed at 400 ° C. for 30 minutes in order to remove the organic solvent in the electron emission portion 15B. In this way, the electron-emitting device shown in Fig. 30C can be obtained.

Embodiment 15

Embodiment 15 is a variation of Embodiment 14. A partial schematic sectional view of the flat electron-emitting device in Embodiment 15 is shown in FIG. 31C. In the flat electron-emitting device shown in Fig. 31C, the structure of the electron emission section 15B is slightly different from the flat electron-emitting device shown in Fig. 30C. Hereinafter, with reference to FIG. 31 which is a schematic partial sectional drawing of a support body etc., the manufacturing method of such an electron emitting element is demonstrated.

[Process 1500]

First, the conductive material layer for the cathode electrode is formed on the support 10. Specifically, after forming a resist material layer (not shown) on the entire surface of the support 10, the resist material layer of the portion where the cathode electrode is to be formed is removed. Thereafter, a conductive material layer for a cathode electrode made of chromium (Cr) is formed on the entire surface by a sputtering method. Further, a resistor layer 60 made of SiC is formed on the entire surface by a sputtering method. Then, a graphite powder coating layer is formed on the resistor layer 60 by spin coating, and the graphite powder coating layer is dried. Thereafter, when the resist material layer is removed using a stripping solution, the conductive material layer for the cathode electrode, the resistor layer 60, and the graphite powder coating layer formed on the resist material layer are also removed. In this way, according to the so-called lift-off method, a structure in which the cathode electrode 11, the resistor layer 60, and the electron emitting portion 15B are stacked can be obtained (see FIG. 31A).

[Step-1510]

Next, after the insulating layer 12 is formed on the entire surface, the stripe gate electrode 313 is formed on the insulating layer 12 (see Fig. 31B). Thereafter, the openings 14 are formed in the gate electrode 313 and the insulating layer 12 to expose the electron emission section 15B at the bottom of the opening 14 (see FIG. 31C). The electron emission portion 15B formed on the surface of the cathode electrode 11 exposed at the bottom of the opening 14 is emitted.

Embodiment 16

Embodiment 16 is a modification of the planar electron-emitting device described in Embodiment 11. The planar electron emitting device showing a partial cross-sectional view schematically in FIG. 32A differs from the planar electron emitting device shown in FIG. 23 in that the surface of the cathode electrode 211 exposed to the bottom of the opening 14 (electron emitting portion). (Corresponding to 15C), the minute uneven portion 11A is formed. Such a planar electron-emitting device can be manufactured by the following manufacturing method.

[Process-1600]

First, the cathode electrode 211 (electron emission layer) which functions as the electron emission part 15C is formed on the support body 10. Specifically, after forming the cathode material conductive material layer which consists of tungsten (W) on the support body 10 by a sputtering method, the cathode material conductive material layer is patterned according to a lithography technique and a dry etching technique. Thereby, the cathode electrode 211 comprised from the stripe-type cathode electrode conductive material layer can be formed on the support body 10.

[Step-1610]

Next, for example, an insulating layer 12 made of SiO ₂ is formed on the entire surface of the support 10 and the cathode electrode 211 by, for example, CVD. And the insulating layer 12 can also be formed from glass paste by the screen printing method.

[Step-1620]

Thereafter, openings 14 are formed in insulating layer 12 using lithographic and etching techniques. Alternatively, for example, when the insulating layer 12 is formed by screen printing, the opening 14 may be formed. In this way, the surface of the cathode electrode 211 corresponding to the electron emission section can be exposed at the bottom of the opening 14. Here, the insulating layer 12 corresponds to a spacer.

[Step-1630]

Subsequently, a gate electrode 313 is formed on this insulating layer 12.

[Process-1640]

Thereafter, the openings 14 are formed in the gate electrode 313 and the insulating layer 12, and the cathode electrode 211 is exposed at the bottom of the opening 14. Thereafter, the minute uneven portion 11A is formed in the portion of the cathode electrode 211 exposed at the bottom of the opening 14. In the formation of the minute uneven portions 11A, SF ₆ is used as the etching gas, and the conditions under which the difference in etching rate increases between grains and grain boundaries of tungsten constituting the cathode electrode 211 are set, and the dry process according to the RIE method is performed. Etching is performed. As a result, the minute uneven portion 11A having a dimension almost reflecting the crystal grain size of tungsten can be formed.

In the structure of such a planar electron-emitting device, a large electric field is applied from the gate electrode 313 to the convex portions of the minute uneven portions 11A of the cathode electrode 211, and more specifically, the minute uneven portions 11A. . At this time, the electric field concentrated on the convex portion is larger than the case where the surface of the cathode electrode 211 is smooth, so that the quantum is efficiently emitted from the convex portion by the quantum tunnel effect. Therefore, as compared with the planar electron-emitting device in which only the smooth cathode electrode 211 is exposed at the bottom of the opening 14, it is possible to improve the brightness in the case of being incorporated in the flat display device. Therefore, according to the planar electron-emitting device shown in Fig. 32A, even if the potential difference between the gate electrode 313 and the cathode electrode 211 is relatively small, sufficient emission electron current density can be obtained, resulting in high luminance of the flat panel display device. Is achieved. Alternatively, the gate voltage required to achieve the same brightness may be low, and thus it is possible to achieve low power consumption.

And the opening part 14 was formed by etching the insulating layer 12, and after that, although the uneven part 11A was formed in the cathode electrode 211 according to the anisotropic etching technique, the etching for forming the opening part 14 was performed. By this, it is also possible to form the minute uneven portions 11A at the same time. That is, when etching the insulating layer 12, the anisotropic etching conditions which can expect some ion sputtering action are employ | adopted, and etching continues even after the opening part 14 which has a vertical wall is formed, and the opening part 14 is carried out. The minute uneven portion 11A can be formed in the portion of the cathode electrode 211 exposed at the bottom of the. After that, the isotropic etching of the insulating layer 12 may be performed.

In the same process as in [Step-1600], after forming the gate electrode conductive material layer made of tungsten on the support 10 by the sputtering method, the conductive material layer for the cathode electrode is subjected to the lithography technique and the dry etching technique. Is formed, and then the minute uneven portions 11A are formed on the surface of the conductive material layer for the cathode electrode, and then the same electron emission device as shown in FIG. You can also make.

In the same process as in [Step-1600], after forming the cathode electrode conductive material layer made of tungsten on the support 10 by the sputtering method, the minute uneven portion 11A is formed on the surface of the cathode electrode conductive material layer. ), And then patterning the conductive material layer for the cathode electrode in accordance with the lithography technique and the dry etching technique, and then carrying out the process subsequent to [Step-1610], the same electron-emitting device as shown in Fig. 32A. You can also make.

In FIG. 32B, a modification of the electron-emitting device shown in FIG. 32A is shown. In the electron-emitting device shown in FIG. 32B, the average height position of the tip end portion of the minute uneven portion 11A is present on the support 10 side rather than the lower surface position of the insulating layer 12 (that is, is lowered). . To form such an electron-emitting device, the duration of dry etching in the same process as in [Step-1600] may be extended. According to such a structure, the electric field strength near the center part of the opening part 14 can be raised further.

33 shows a planar electron-emitting device in which the coating layer 11B is formed on the surface of the cathode electrode 11 (more specifically, on at least the minute uneven portion 11A) corresponding to the electron emission portion 15C. .

The coating layer 11B is preferably made of a material having a smaller work function φ than the material constituting the cathode electrode 211. Which material is selected is unique to the material constituting the cathode electrode 211. It may be determined according to the function, the potential difference between the gate electrode 313 and the cathode electrode 211, the magnitude of the required emission electron current density, and the like. Amorphous diamond can be illustrated as a constituent material of the coating layer 11B. When the coating layer 11B is formed using amorphous diamond, the emission electron current density required for the flat panel display device can be obtained with an electric field strength of 5 x 10 ⁷ V / m or less.

The thickness of the coating layer 11B is selected to the extent that the minute uneven portions 11A can be reflected. This is because the concave portion of the minute uneven portion 11A is embedded by the coating layer 11B, and the surface of the electron emitting portion is smoothed, so that the meaning of forming the minute uneven portion 11A is lost. Therefore, although it also depends on the dimension of 11 A of uneven | corrugated parts, for example, when 11 A of uneven | corrugated parts are formed reflecting the crystal grain diameter of an electron emission part, the thickness of the coating layer 11B is generally selected about 30-100 nm. It is desirable to. In addition, when lowering the average height position of the tip end portion of the minute uneven portion 11A than the lower surface position of the insulating layer, it is more preferable to lower the average height position of the tip end portion of the coating layer 11B than the lower surface position of the insulating layer. Do.

Specifically, after [Step-1600], the coating layer 11B made of amorphous diamond may be formed on the entire surface by, for example, CVD. The coating layer 11B is also deposited on the etching mask (not shown) formed on the gate electrode 313 and the insulating layer 12, but this deposition portion is removed at the same time when the etching mask is removed. As the source gas, for example, the coating layer 11B can be formed by a CVD method using a CH ₄ / H ₂ mixed gas or a CO / H ₂ mixed gas, and each is thermally decomposed to amorphous diamond by thermal decomposition of a compound containing carbon. The coating layer 11B which consists of is formed.

In the same process as in [Step-1600], after forming the cathode electrode conductive material layer made of tungsten on the support 10 by the sputtering method, the cathode electrode conductive material layer is subjected to the lithography technique and the dry etching technique. Patterning, after that, the minute uneven portion 11A was formed on the surface of the cathode electrode conductive material layer, and then the coating layer 11B was formed. The electron emitting device shown in FIG.

In the same process as in [Step-1600], after forming the cathode electrode conductive material layer made of tungsten on the support 10 by the sputtering method, the minute uneven portion 11A is formed on the surface of the cathode electrode conductive material layer. ), Then the coating layer 11B is formed, and then the coating layer 11B and the conductive material layer for the cathode electrode are patterned according to the lithography technique and the dry etching technique, and then the steps following [Step-1610] are executed. By doing so, the electron-emitting device shown in Fig. 32 can also be manufactured.

Moreover, as a material which comprises a coating layer, you may select suitably the material from which the secondary electron gain (delta) of such material becomes larger than the secondary electron gain (delta) of the conductive material which comprises a cathode electrode.

Incidentally, a coating layer may be formed on the electron emission portion 15C (the surface of the cathode electrode 211) of the planar electron emission device shown in FIG. In this case, what is necessary is just to form the coating layer 11B on the surface of the cathode electrode 211 exposed to the bottom part of the opening part 14 after [step-1120], and in [step-1100], for example, After forming the cathode electrode conductive material layer on the support 10, the coating layer 11B may be formed on the cathode electrode conductive material layer, and then, these layers may be patterned according to a lithography technique and a dry etching technique. .

Embodiment 17

A partial schematic cross-sectional view of a crater-type electron emitting device is shown in FIG. 37 (B). The crater type electron-emitting device is provided with a cathode electrode 411 having a plurality of raised portions 411A for emitting electrons and a recessed portion 411B surrounded by each raised portion 411A on the support 10. . And the schematic perspective view which removed the insulating layer 12 and the gate electrode 313 is shown to FIG. 36 (B).

The shape of the recess is not particularly limited, but is typically approximately spherical. This is related to the use of spheres in the method of manufacturing such cratered electron-emitting devices, and the concave portion 411B being formed to reflect a part of the sphere shape. Therefore, when the recessed part 411B has a substantially spherical surface, the raised part 411A which encloses the recessed part 411B becomes annular, and in this case, the recessed part 411B and the raised part 411A. Denotes a crater or caldera as a whole. Since the 411 A is a part which emits electrons, it is especially preferable that the tip part 411 C is sharp at the point of an electron emission efficiency. The profile of the tip portion 411C of the raised portion 411A may have irregular irregularities or may be smooth. The arrangement of the raised portions 411A in one pixel may be regular or random. And the recessed part 411B may be enclosed by the continuous ridge part 411A along the circumferential direction of the recessed part 411B, and in some cases, discontinuous melting along the circumferential direction of the recessed part 411B. It may be surrounded by the base 411A.

In the method for manufacturing a crater type electron-emitting device as described above, the step of forming the striped cathode electrode on the support is more specifically,

Forming a stripe-type conductive material layer for cathode electrode coated with a plurality of spheres on a support;

By removing the sphere, the portion of the conductive material layer for the cathode electrode coated with the sphere is removed, and thus has a plurality of ridges for emitting electrons and a recess surrounded by each ridge and reflecting a part of the shape of the sphere. It consists of a process of forming a cathode electrode.

It is desirable to remove the spheres by state changes and / or chemical changes of the spheres. Here, the state change and / or chemical change of the sphere means a change, such as expansion, sublimation, foaming, gas generation, decomposition, combustion, carbonization, or a combination thereof. For example, when a sphere consists of organic materials, it is more preferable to remove it by burning a sphere. The removal of the spheres and the removal of the portion of the conductive material layer for the cathode electrode covering the spheres, or the removal of the spheres and the removal of the portion of the cathode electrode-conductive material layer, the insulating layer and the gate electrode covering the spheres must be performed. It doesn't have to happen at the same time. For example, if a part of the sphere remains after removing the portion of the conductive material layer for the cathode electrode covering the sphere, or in addition to the portion constituting the insulating layer or the gate electrode, removal of the remaining sphere You can do it later.

In particular, in the case where the sphere is made of an organic material, for example, the sphere is burned, for example, carbon monoxide, carbon dioxide, and water vapor are generated to increase the pressure in the enclosed space near the sphere, and thus the cathode material for the cathode electrode near the sphere. The layer ruptures at a point exceeding a certain breakdown limit. By the force of this rupture, the part of the cathode electrode and conductive material layer which covers a sphere is scattered, a ridge and a recess are formed, and a sphere is removed further. When the sphere is burned, for example, according to the same mechanism, the layer constituting the cathode electrode conductive material layer, the insulating layer and the gate electrode is ruptured at a time point exceeding a certain breakdown voltage limit. Due to the rupture force, portions of the conductive material layer for the cathode electrode covering the sphere, the layer constituting the insulating layer and the gate electrode are scattered to form an opening simultaneously with the raised portion and the recessed portion. Is removed. That is, before removing the sphere, no opening is present in the insulating layer and the layer constituting the gate electrode, and the opening is formed by removing the sphere. At this time, since the initial process of the combustion of the sphere proceeds in the closed space, a part of the sphere may be carbonized. It is preferable to make the thickness of the portion of the conductive material layer for the cathode electrode covering the sphere so thin that it can be scattered by rupture. In addition, it is preferable to make the thickness of the conductive material layer for the cathode electrode covering the sphere, the insulating layer, and the layer portions constituting the gate electrode thin enough to be scattered by rupture, and in particular, the sphere is not covered with the insulating layer. It is preferable to make the thickness of the portion approximately equal to the diameter of the sphere.

In the electron-emitting device of Embodiment 19 described later, although the sphere can be removed by the state change and / or chemical change of the sphere, it is not accompanied by the rupture of the conductive material layer for the cathode electrode, and therefore, it is removed by external force. Sometimes it's easy. In the electron-emitting device of Embodiment 20 described later, the opening is already completed at the time point before the removal of the sphere. However, when the size of the opening is larger than the diameter of the sphere, the sphere can be removed by an external force. Here, the external force is a physical force such as blowing pressure of air or inert gas, blowing pressure of cleaning liquid, magnetic attraction force, electrostatic force, centrifugal force. In the electron-emitting device of Embodiment 19 or Embodiment 20, unlike the electron-emitting device of Embodiment 17, the conductive material layer for the cathode electrode of the portion covering the sphere, or in some cases, the insulating layer or the gate electrode again Since there is no need to scatter the layers constituting the electrode, there is an advantage that debris of the layers constituting the conductive material layer, the insulating layer, or the gate electrode for the cathode electrode is less likely to occur.

In the sphere used as the electron-emitting device in Embodiment 19 or Embodiment 20 described later, at least the surface tension of each material of the material constituting the conductive material layer for the cathode electrode, and depending on the configuration, the layer constituting the insulating layer or the gate electrode It is preferable that it is comprised from the material which has a big interfacial tension compared with (surface tension). Accordingly, in the electron-emitting device of Embodiment 20, the layer constituting the cathode electrode conductive material layer, the insulating layer, and the gate electrode does not cover at least the top of the sphere, and the openings constitute the insulating layer and the gate electrode from the beginning. A state formed in the layer to be obtained is obtained. To what extent the diameter of the opening is, for example, the relationship between the thickness of the material constituting the conductive material layer for the cathode electrode, the insulating layer or the layer constituting the gate electrode and the diameter of the sphere, or the conductive material layer for the cathode electrode And the interfacial tension (surface tension) of the material constituting the layer constituting the insulating layer or the gate electrode, the conductive material layer for the cathode electrode, and the layer constituting the insulating layer or the gate electrode.

In the electron-emitting device of Embodiment 19 or Embodiment 20, which will be described later, the sphere may have at least the surface satisfying the above-described conditions relating to the interfacial tension. That is, the part which has an interface tension larger than each interface tension of the conductive material layer for insulating electrodes, an insulating layer, and the layer which comprises a gate electrode may be whole only the surface of a sphere, and the surface and / or the whole structure of a sphere The material may be an inorganic material, an organic material, or a combination of inorganic and organic materials. In the electron-emitting device of Embodiment 19 or Embodiment 20, when the conductive material layer for the cathode electrode is made of an ordinary metal material, and the insulating layer is made of a silicon oxide material such as glass, the surface of the metal material is adsorbed moisture. On the surface of the hydroxyl group derived from and the insulating layer, a dangling bond of Si—O bond and a hydroxyl group derived from the adsorbed water are present, and it is usually in a state of high hydrophilicity. Therefore, it is particularly effective to use a sphere having a hydrophobic surface treatment layer. Examples of the constituent material of the hydrophobic surface treatment layer include fluorine resins such as polytetrafluoroethylene. In the case where the sphere has a hydrophobic surface treatment layer, if the inner portion of the hydrophobic surface treatment layer is a core material, the constituent material of the core material may be any polymer material other than glass, ceramics, and fluorine resin.

Although the organic material which comprises a sphere is not specifically limited, General purpose polymeric material is preferable. However, in polymer materials having an extremely high degree of polymerization or extremely high content of multiple bonds, the combustion temperature becomes too high and adversely affects the conductive material layer, the insulating layer, and the layer constituting the gate electrode when the sphere is removed by combustion. There is concern about this. Therefore, it is desirable to select a polymer material capable of burning or carbonizing at a temperature at which there is no possibility of adverse effects on them. In particular, when the insulating layer is formed using a material that requires firing in a post-process, such as glass paste, a polymer material that can be burned or carbonized at the firing temperature of the glass paste is reduced in terms of reducing the number of steps as much as possible. It is desirable to choose. Since the typical firing temperature of the glass paste is about 530 ° C, the combustion temperature of such a polymer material is preferably about 350 to 500 ° C. Typical polymer materials include styrene, urethane, acrylic, vinyl, vinylbenzene, melamine, formaldehyde, and polymethylene homopolymers or copolymers. In addition, as a sphere, in order to ensure reliable arrangement on a support body, the sticking type sphere which has adhesive force can also be used. As a sticking type sphere, the sphere which consists of acrylic resin can be illustrated.

In addition, for example, a vinylidene chloride-acrylonitrile copolymer may be used as the outer shell, isobutane is contained as a blowing agent, and a heat-expandable microsphere with a capsule may be used as a sphere. In the electron-emitting device of Embodiment 17, when the heat-expandable microsphere is heated using such a heat-expandable microsphere, the outer polymer is softened, and further, the contained isobutane is gasified to expand, resulting in a particle size. The hollow body, which is about 4 times as large as a spherical body than before expansion, is formed. As a result, in the electron-emitting device of Embodiment 17, it is possible to form the raised portion for emitting electrons and the recessed portion surrounded by the raised portion and reflecting a part of the spherical shape as the conductive material layer for the cathode electrode. In addition to these recesses and raised portions, openings penetrating the layers constituting the gate electrode and the insulating layer may be formed. In addition, in this specification, expansion | swelling by heating of a thermally expandable microsphere is also included in the concept of removal of a sphere. Thereafter, the thermally expandable microspheres may be removed using an appropriate solvent.

In the electron-emitting device of Embodiment 17, after disposing a plurality of spheres on the support, a cathode electrode conductive material layer covering the sphere may be formed. In this case, or in the electron-emitting device of Embodiment 19 or Embodiment 20 described later, as a method of arranging a plurality of spheres on a support, a dry method in which spheres are dispersed on a support is mentioned. Can be. For the dispersion of the sphere, for example, in the field of manufacturing a liquid crystal display device, a technique of distributing a spacer for keeping a panel interval constant can be applied. Specifically, what is called a spray gun which sprays a sphere from a nozzle with a pressurized gas can be used. And when spraying a sphere from a nozzle, you may make it the state disperse | distributed in the volatile solvent. Alternatively, the spheres may be dispersed by using an apparatus or a method which is usually used in the field of electrostatic powder coating. For example, a negatively charged sphere can be sprayed toward a grounded support by an electrostatic powder spray gun using corona discharge. Since the sphere to be used is very small as will be described later, when dispersed on the support, it is adhered to the surface of the support by, for example, electrostatic force, and does not easily fall off from the support even in a subsequent step. After arranging a plurality of spheres on the support, pressing the spheres can eliminate the overlap of the plurality of spheres on the support, so that the spheres can be densely arranged in a single layer on the support.

Alternatively, as in the electron-emitting device of Embodiment 18 described later, a composition layer made of a composition obtained by dispersing a sphere and a cathode electrode material in a dispersion medium is formed on a support, and thus a plurality of spheres are disposed on the support. After covering a sphere with the cathode electrode which consists of a cathode electrode material, you may remove a dispersion medium. As a property of a composition, a slurry and a paste are possible, What is necessary is just to select the composition and viscosity of a dispersion medium suitably according to these desired properties. As a method of forming a composition layer on a support body, the screen printing method is preferable. It is preferable that the cathode electrode material is typically fine particles whose settling velocity in the dispersion medium is slower than that of the sphere. Carbon, barium, strontium, and iron are mentioned as a material which comprises such microparticles | fine-particles. After removing the dispersion medium, the cathode is fired as necessary. As a method of forming a composition layer on a support body, the spraying method, the dropping method, the spin coating method, and the screen printing method are mentioned. And although a sphere is arrange | positioned and a sphere is coat | covered with the cathode electrode conductive material layer which consists of a cathode electrode material, it is necessary to pattern this cathode electrode conductive material layer according to the formation method of a composition layer.

Or in the electron emission element in Embodiment 19 or Embodiment 20 mentioned later, after forming the composition layer which consists of a composition which disperse | distributes a sphere in a dispersion medium on a support body, Therefore, after arrange | positioning several spheres on a support body, The dispersion medium can be removed. As a property of a composition, a slurry and a paste are possible, What is necessary is just to select the composition and viscosity of a dispersion medium suitably according to these desired properties. Typically, an organic solvent such as isopropyl alcohol can be used as the dispersion medium, and the dispersion medium can be removed by evaporation. As a method of forming a composition layer on a support body, the spraying method, the dropping method, the spin coating method, the screen printing method is mentioned.

However, the layer constituting the gate electrode and the conductive material layer for the cathode electrode are different from each other (for example, the projection image of the layer constituting the striped gate electrode and the projection image of the conductive material layer for the striped cathode electrode are different from each other). The angle formed is extended by 90 °, and is patterned, for example, in a stripe shape, and electrons are emitted from the ridges located in the electron emission region. Therefore, the ridges need to exist only in the electron-emitting region in function. However, even if the ridges and the concave portions exist in regions other than the electron emission region, such ridges and the concave portions do not fulfill the function of emitting lower electrons while being covered with the insulating layer. Therefore, even if the sphere is placed on the front surface, no problem occurs.

On the other hand, in the case of removing the respective parts of the conductive material layer, the insulating layer, and the layer constituting the gate electrode covering the spheres, the arrangement positions of the individual spheres and the formation positions of the openings correspond one-to-one. The openings are formed in regions other than the electron emission region. Hereinafter, openings formed in regions other than the electron emission region are called " invalid openings " and are distinguished from original openings that contribute to electron emission. By the way, even if an invalid opening is formed in the area | regions other than an electron emission area | region, this invalid opening part does not function as an electron emission element at all, and does not adversely affect the operation | movement of the electron emission element formed in an electron emission area | region. This is because even if the ridge and the recess are exposed at the bottom of the invalid opening, the gate electrode is not formed at the upper end of the invalid opening, and even if the gate electrode is formed at the upper end of the invalid opening, the ridge and the recess are at the bottom. This is because it is not exposed, or the ridges and recesses are not exposed at the bottom of the ineffective opening, the gate electrodes are not formed at the upper ends, and only the surface of the support is exposed. Therefore, even if the sphere is placed on the front surface, no problem occurs. The hole formed on the boundary line between the electron emission region and the other region is included in the opening.

The diameter of the sphere is the diameter of the desired opening, the diameter of the concave portion, the size of the display screen of the flat panel display device constructed using the electron-emitting device, the number of pixels, the size of the electron-emitting region (redundant region), and the electron-emission that should constitute one pixel. Although it can select according to the number of elements, it is preferable to select in 0.1-10 micrometers. For example, since the sphere marketed as a spacer of a liquid crystal display device has a favorable particle size distribution of 1-3%, it is preferable to use this. The shape of the sphere is ideally a spherical shape, but not necessarily a spherical shape. In addition, depending on the method of manufacturing the electron-emitting device, as described above, either the openings or the invalid openings may be formed at the place where the spheres are arranged, but on the support, the spheres may have a density of about 100 to 5000 / mm2. It is preferable to arrange. For example, if a sphere is placed on a support at a density of about 1000 / mm 2, for example, if the size of the electron emission region is 0.5 mm × 0.2 mm, about 100 spheres exist in this electron emission region. And about 100 ridges are formed. If the number of ridges of this number is formed in one electron emission region, the nonuniformity of the diameter of the recess due to the nonuniformity of the particle size distribution and the sphericity of the sphere is almost averaged, and practically, one pixel (or The emission electron current density and luminance per subpixel) become almost uniform.

In the electron-emitting device of Embodiment 17 or the electron-emitting device of Embodiments 18 to 20, which will be described later, a part of the spherical shape is reflected in the concave portion constituting the electron emission portion. The profile of the tip of the ridge may have irregular irregularities or may be smooth. In particular, in the electron-emitting device of Embodiment 17 or the electron-emitting device of Embodiment 18, the tip is formed at the break of the conductive material layer for the cathode electrode. Because of this, the tip end of the ridge is likely to be irregular. If the tip portion is sharpened by the fracture, the tip portion can function as a highly efficient electron emitting portion, which is preferable. In the electron-emitting device of Embodiment 17 to Embodiment 20, all the ridges surrounding the recesses are generally annular, and the recesses and the ridges in this case exhibit the same shape as the crater or caldera as a whole.

The arrangement of the ridges on the support may be regular or random, depending on the arrangement method of the sphere. When the dry method or wet method described above is adopted, the arrangement of the ridges on the support is random. The concave portion may be surrounded by the continuous ridges along the circumferential direction of the concave portion, and in some cases, the concave portion may be surrounded by the discontinuous ridges along the circumferential direction of the concave portion.

In the electron-emitting device of Embodiment 17 to Embodiment 20, in the case where an opening is formed in the insulating layer after formation of the insulating layer, the protective layer is formed after obtaining the ridge so that no damage occurs at the tip of the ridge. After the formation, the protective layer may be removed. Chromium can be mentioned as a material which comprises a protective layer.

Hereinafter, with reference to FIGS. 34-37, the manufacturing method of the electron-emitting device in Embodiment 17 is demonstrated, However, FIG. 34 (A), FIG. 35 (A), FIG. 36 (A) is a schematic partial sectional drawing, 37 (A) and (B) are schematic partial cross-sectional views, and FIGS. 34 (B), 35 (B) and 36 (B) are FIGS. 34 (A), 35 (A) and 36 (A). Some perspective views schematically showing a wider range.

[Step-1700]

First, a cathode electrode 411 covering a plurality of spheres 80 is formed on the support 10. Specifically, first, the sphere 80 is disposed on the entire surface of the support 10 made of glass, for example. The sphere 80 is made of, for example, a polymethylene polymer material, and has an average diameter of about 5 µm and a particle size distribution of less than 1%. The spheres 80 are randomly placed on the support 10 on the support 10 using a spray gun. The spray gun may be sprayed by mixing a sphere with a volatile solvent or spraying it from a nozzle in a powder state. The arranged sphere 80 is supported on the support 10 by electrostatic force. This state is shown to FIG. 34 (A) and (B).

[Step-1710]

Next, the conductive material layer 411 ′ for the cathode electrode is formed on the sphere 80 and the support 10. 35A and 35B show a state in which the conductive material layer 411 'for the cathode electrode is formed. The conductive material layer 411 'for the cathode electrode can be formed by, for example, screen printing carbon paste in a stripe pattern. At this time, since the sphere 80 is disposed on the entire surface on the support 10, the sphere 80 is not naturally covered with the conductive material layer 411 'for the cathode electrode, as shown in Fig. 35B. exist. Next, to remove the moisture and the solvent contained in the cathode electrode conductive material layer 411 'and to planarize the cathode electrode conductive material layer 411', for example, the cathode electrode conductive material at 150 ° C. Dry layer 411 '. At this temperature, the sphere 80 does not cause inferior state changes and / or chemical changes. In addition to screen printing using the carbon paste as described above, the cathode electrode conductive material layer 411 'is formed on the entire surface, and the cathode electrode conductive material layer 411' is formed using conventional lithography and dry etching techniques. Patterning may be performed to form a stripe-type conductive material layer for cathode electrode 411 '. In the case of applying the lithography technique, the resist layer is usually formed by spin coating, but if the rotation speed of the support 10 during spin coating is about 5000 rpm and the rotation time is about several seconds, the sphere 80 is dropped or displaced. Can be supported on the support 10.

[Step-1720]

Next, by removing the sphere 80, the portion of the cathode electrode conductive material layer 411 'covering the sphere 80 is removed, and thus, a plurality of raised portions 411A for emitting electrons, A cathode electrode 411 is formed, which is surrounded by the raised portion 411A and has a recess 411B reflecting a part of the shape of the sphere 80. This state is shown to FIG. 36 (A) and (B). Specifically, the sphere 80 is combusted by sintering the conductive material layer 411 'for the cathode electrode and heating to about 530 ° C. The pressure of the closed space in which the sphere 80 is trapped increases due to the combustion of the sphere 80, and the portion of the cathode material conductive material layer 411 'covering the sphere 80 exceeds a certain breakdown voltage limit. Ruptured at and removed. As a result, the raised portions 411A and the recessed portions 411B are formed in a portion of the cathode electrode 411 formed on the support 10. And when a part of sphere is left as dregs after removal of a sphere, it depends also on the material which comprises the sphere to be used, What is necessary is just to remove a dreg using an appropriate washing | cleaning liquid.

[Step-1730]

Thereafter, the insulating layer 12 is formed on the cathode electrode 411 and the support 10. Specifically, for example, the glass paste is screen printed on the entire surface with a thickness of about 5 μm. Next, in order to remove the water | moisture content and the solvent contained in the insulating layer 12, and to planarize the insulating layer 12, the insulating layer 12 is dried at 150 degreeC, for example. Instead of screen printing using the glass paste as described above, an SiO ₂ film may be formed by, for example, plasma CVD.

[Step-1740]

Next, a stripe gate electrode 313 is formed on the insulating layer 12 (see Fig. 37A). The direction in which the projection image of the layer constituting the stripe gate electrode extends has an angle of 90 ° with the direction in which the projection image of the conductive material layer for the stripe cathode electrode extends.

[Step-1750]

Thereafter, in the electron emission region where the projection image of the gate electrode 313 and the projection image of the cathode electrode 411 overlap, an opening 14 is formed in the gate electrode 313 and the insulating layer 12, and thus, A plurality of raised portions 411A and recessed portions 411B are exposed at the bottom of the opening 14. Formation of the opening 14 can be performed by formation of a resist mask by a conventional lithography technique and etching using a resist mask. However, it is preferable to etch on the conditions which can ensure a sufficiently high etching selectivity with respect to the cathode electrode 411. In addition, after forming the ridge part 411A, it is preferable to form the protective layer which consists of chromium, for example, and to form the opening part 14, and to remove a protective layer. Thereafter, the resist mask is removed. In this way, the electron-emitting device shown in Fig. 37B can be obtained.

As a modification of the electron emitting device manufacturing method of Embodiment 17, after [Step-1710], [Step-1730] to [Step-1750] may be performed, followed by [Step-1720]. In this case, the combustion of a sphere and the baking of the material which comprises the insulating layer 12 may be performed simultaneously.

In addition, after [Step-1710], [Step-1730] is performed, and in the same step as [Step-1740], a layer constituting a stripe type gate electrode having no opening is formed on the insulating layer. After that, [Step-1720] is executed. As a result, the portions of the cathode electrode conductive material layer 411 'covering the sphere 80, the insulating layer 12, and the layers constituting the gate electrode are removed, and thus the gate electrode 313 and the insulating layer are removed. The opening which penetrates through 12 is formed, and the electron which consists of 411A of discharge | emissions which discharge | releases an electron, and the recessed part 411B enclosed by ridge 411A and reflecting a part of spherical 80 shape is reflected. The discharge portion may be formed in the cathode electrode 411 positioned at the bottom of the opening. That is, the pressure of the closed space in which the sphere 80 is trapped increases with combustion of the sphere 80, and the conductive material layer 411 ', the insulating layer 12, and the gate electrode for the cathode electrode of the portion covering the sphere The layer constituting the rupture becomes ruptured when the pressure limit exceeds a certain pressure limit, and an opening is formed at the same time as the raised portions 411A and the recessed portions 411B, and the sphere 80 is further removed. The opening passes through the gate electrode 313 and the insulating layer 12 and reflects a part of the shape of the sphere 80. Moreover, the bottom part of the opening part is left by the 411 A of bulge part which discharge | releases an electron, and the recessed part 411 B which enclosed the bulge part 411 A and reflecting a part of spherical-80 shape.

Embodiment 18

Embodiment 18 is a variation of Embodiment 17. Although the manufacturing method of the crater type electron emitting element of Embodiment 18 is demonstrated with reference to FIG. 38, the process of arrange | positioning the several sphere 80 on the support body 10, and the sphere 80 and the cathode electrode material in a dispersion medium The composition layer 81 which consists of a composition which disperse | distributes is formed on the support body 10, Therefore, the some sphere 80 is arrange | positioned on the support body 10, and the cathode electrode 411 which consists of a cathode electrode material After coating a sphere, the point which consists of a process of removing a dispersion medium, ie, a wet method, differs from the manufacturing method of the electron-emitting device in Embodiment 17.

[Process-1800]

First, the plurality of spheres 80 are disposed on the support 10. Specifically, a composition layer 81 made of a composition obtained by dispersing the sphere 80 and the cathode electrode material 81B in the dispersion medium 81A is formed on the support 10. That is, for example, using isopropyl alcohol as the dispersion medium 81A, a sphere 80 made of a polymethylene polymer material having an average diameter of about 5 μm and carbon particles having an average diameter of about 0.05 μm are used as the cathode electrode material. The composition obtained by dispersing in 81 A of dispersion mediums as 81B is screen-printed on the support body 10 in stripe form, and the composition layer 81 is formed. 38 (A), the state immediately after formation of the composition layer 81 was shown.

[Step-1810]

Among the composition layers 81 supported by the support 10, the spheres 80 are sedimented and disposed on the support 10, and at the same time, the cathode electrode extends from the sphere 80 onto the support 10. The material 81B is settled, and the cathode electrode constituent layer 411 'made of the cathode electrode material 81B is formed. As a result, the plurality of spheres 80 may be disposed on the support 10, and the spheres 80 may be covered with a cathode electrode conductive material layer 411 ′ made of a cathode electrode material. This state is shown to FIG. 38 (B).

[Process-1820]

Thereafter, 81 A of dispersion mediums are removed by evaporation. This state is shown in FIG. 38 (C).

[Step-1830]

Subsequently, the same steps as [Step-1720] to [Step-1750] of the electron-emitting device according to the seventeenth embodiment, or a modification of the method for manufacturing the electron-emitting device according to the seventeenth embodiment are carried out to Fig. 37B. The same electron emitting device as shown can be completed.

Embodiment 19

Embodiment 19 is also a modification of Embodiment 17. In the modification of the crater type electron-emitting device manufacturing method of Embodiment 19, the step of forming the striped cathode electrode on the support is more specifically,

Disposing a plurality of spheres on a support;

A step of forming a cathode electrode on the support having a plurality of raised portions for emitting electrons and a recessed portion surrounded by each raised portion and reflecting a part of the spherical shape, wherein each raised portion is formed around the sphere;

Process of removing spheres

Is done. Arrangement of the several spheres on a support body is performed by the dispersion | distribution of a sphere. In addition, the sphere has a hydrophobic surface treatment layer. Hereinafter, a method of manufacturing the electron emitting device will be described with reference to FIG. 39.

[Step-1900]

First, the plurality of spheres 180 are disposed on the support 10. Specifically, the some sphere 180 is arrange | positioned at the whole surface on the support body 10 which consists of glass. The sphere 180 is formed by, for example, coating a core material 180A made of a divinylbenzene polymer material with a surface treatment layer 180B made of polytetrafluoroethylene resin, and having an average diameter of about 5 It is less than 1% in particle size distribution. The spheres 180 are randomly placed on the support 10 at a density of approximately 1000 pieces / mm 2 using a spray gun. The disposed spheres 180 are adsorbed onto the support 10 by electrostatic force. The state which the process to here is complete | finished is shown to FIG. 39 (A).

[Step-1910]

Next, each of the ridges 411A which emits electrons and a recess 411B which is surrounded by each of the ridges 411A and reflects a part of the spherical 180 shape, each of the ridges 411A A cathode electrode 411 (composed of a conductive material layer for the cathode electrode) formed around the sphere 180 is formed on the support 10. Specifically, in the same manner as described in the electron-emitting device in Embodiment 17, for example, the paste is screen printed in a stripe shape, but in the electron-emitting device in Embodiment 19, the surface of the sphere 180 has a surface treatment layer. Since it is hydrophobic by 180B, the screen-printed paste immediately bounces off the sphere 180, and is deposited around the sphere 180 to form a ridge 411A. The tip portion 411C of the raised portion 411A is not as sharp as the edge of the electron-emitting device in the seventeenth embodiment. The portion of the conductive material layer for the cathode electrode that enters between the sphere 180 and the support 10 becomes the recess 411B. In FIG. 39B, although the gap is present between the cathode electrode 411 and the sphere 180, the cathode electrode 411 and the sphere 180 may be in contact with each other. Thereafter, the cathode electrode 411 is dried at, for example, 150 ° C. The state which the process to here is complete | finished is shown in FIG. 39 (B).

[Process-1920]

Next, the sphere 180 is removed from the support 10 by applying an external force to the sphere 180. As a specific removal method, washing | cleaning and blowing of a compressed gas are mentioned. The state which the process to here is complete | finished is shown to FIG. 39 (C). And the removal of a sphere can also remove a sphere more specifically, for example by combustion, according to the state change and / or chemical change of a sphere. The same applies to the electron-emitting device in Embodiment 20 described below.

[Process-1930]

Subsequently, by performing [Step-1730] to [Step-1750] of the electron-emitting device in Embodiment 17, an electron-emitting device substantially the same as that shown in Fig. 37B can be obtained.

Then, as a modification of the electron emitting device manufacturing method of Embodiment 19, after [Step-1910], [Step-1730] to [Step-1750] of the electron emitting device according to Embodiment 17 are performed, and then, [Step-1920] may be performed.

Embodiment 20

In the manufacturing method of the crater type electron emission element of Embodiment 20, the process of forming a stripe type cathode electrode on a support body is more specifically,

Disposing a plurality of spheres on a support;

A step of forming a cathode electrode on a support, each of which has a plurality of raised portions for emitting electrons and a recessed portion surrounded by each raised portion and reflecting a part of a spherical shape, wherein each raised portion is formed around the sphere.

Is done. And when forming an insulating layer in the whole surface, the insulating layer in which the opening part was formed above the sphere is formed on a cathode electrode and a support body. The removal of the spheres is performed after the formation of the openings. In the manufacturing method of the electron-emitting device in Embodiment 20, the arrangement of the plurality of spheres on the support is performed by the dispersion of the spheres. In addition, the sphere has a hydrophobic surface treatment layer. Hereinafter, the manufacturing method of the electron-emitting device of Embodiment 20 will be described with reference to FIGS. 40 and 41.

[Process-2000]

First, the plurality of spheres 180 are disposed on the support 10. Specifically, the same process as that of [step-1900] of the electron-emitting device in Embodiment 19 is performed.

[Process-2010]

Then, it has the recessed part 411B which enclosed the some 411 A of emitting electrons, and reflected a part of the shape of the sphere 180, and each ridge 411A is surrounding the sphere 180. As shown in FIG. The formed cathode electrode 411 is formed on the support 10. Specifically, the same steps as in [Step-1910] of the electron-emitting device in Embodiment 19 are performed.

[Process-2020]

Next, an insulating layer 12 having an opening 14A formed above the sphere is formed on the cathode electrode 411 and the support 10. Specifically, for example, the glass paste is screen printed on the entire surface with a thickness of about 5 μm. Screen printing using the glass paste can be carried out in the same manner as the electron-emitting device in Embodiment 17, but since the surface of the sphere 180 is hydrophobic by the surface treatment layer 180B, the screen is formed on the sphere 180. The printed glass paste immediately bounces off and the portion on the sphere 180 of the insulating layer 12 is contracted by its surface tension. As a result, the top of the sphere 180 is not covered with the insulating layer 12 and is exposed in the opening 14A. This state is shown to FIG. 40 (A). In the illustrated example, the diameter of the upper end portion of the opening portion 14A is larger than the diameter of the sphere 180, but when the interface tension of the surface treatment layer 180B is smaller than the interface tension of the glass paste, the diameter of the opening portion 14A is It tends to be small. In contrast, when the interfacial tension of the surface treatment layer 180B is significantly greater than the interfacial tension of the glass paste, the diameter of the opening 14A tends to be large. Then, the insulating layer 12 is dried at 150 degreeC, for example.

[Process-2030]

Next, a gate electrode 313 having an opening 14B communicating with the opening 14A is formed on the insulating layer 12. Specifically, for example, the paste is screen printed in a stripe shape. Screen printing using a paste may be performed in the same manner as the electron-emitting device in Embodiment 17, but since the surface of the sphere 180 is hydrophobic by the surface treatment layer 180B, the screen is printed on the sphere 180. The paste immediately bounces and contracts by its own surface tension, leaving only the surface of the insulating layer 12 attached. At this time, the gate electrode 313 may be formed so as to turn slightly into the opening 14A from the opening end of the insulating layer 12 as shown. Thereafter, the gate electrode 313 is dried at 150 ° C., for example. The state which the process to here is complete | finished is shown in FIG. 40 (B). And when the interfacial tension of the surface treatment layer 180B is smaller than the interfacial tension of the paste, the diameter of the opening 14A tends to decrease. In contrast, when the interfacial tension of the surface treatment layer 180B is significantly greater than the interfacial tension of the paste, the diameter of the opening 14A tends to be large.

[Process-2040]

Next, the sphere 180 exposed to the bottom of the openings 14B and 14A is removed. Specifically, the sphere 180 is combusted by simultaneously firing the cathode electrode 411 and the insulating layer 12 and heating to about 530 ° C. which is a typical firing temperature of the glass paste. At this time, unlike the electron-emitting device in Embodiment 17, since the openings 14A and 14B are formed in the insulating layer 12 and the gate electrode 313 from the beginning, the cathode electrode 411 or the insulating layer 12 Part of the gate electrode 313 is not scattered, and the sphere 180 is quickly removed. When the diameters of the upper end portions of the openings 14A and 14B are larger than the diameters of the spheres 180, the spheres 180 may be formed by external force such as cleaning or blowing of compressed gas without burning the spheres 180, for example. It is possible to remove it. The state which the process to here is complete | finished is shown in FIG. 41 (A).

[Process-2050]

Thereafter, a portion of the insulating layer 12 corresponding to the side wall surface of the opening 14A is isotropically etched to complete the electron-emitting device shown in Fig. 41B. Here, the end portion of the gate electrode 313 faces downward, but this is preferable for increasing the electric field strength in the opening 14.

Embodiment 21

A partial schematic cross sectional view of the edge type electron-emitting device is shown in Fig. 42A. The edge type electron-emitting device comprises a stripe cathode electrode (electron emission layer) 111 formed on the support 10, an insulation layer 12 formed on the support 10 and the cathode electrode 111, and insulation. A stripe-shaped gate electrode 313 formed on the layer 12 is formed, and an opening 14 is formed in the gate electrode 313 and the insulating layer 12. A cathode is formed at the bottom of the opening 14. The edge part 111A of 111 is exposed. By applying a voltage to the cathode electrode 111 and the gate electrode 313, electrons are emitted from the edge portion 111A of the cathode electrode 111.

And as shown to FIG. 42 (B), the recessed part 10A may be formed in the support body 10 under the cathode electrode 111 in the opening part 14. As shown to FIG. In addition, as shown in FIG. 42C, a schematic cross-sectional view of the first gate electrode 13A formed on the support 10 and the lower insulation formed on the support 10 and the first gate electrode 13A is shown. The layer 12A, the cathode electrode 111 formed on the lower insulating layer 12A, the upper insulating layer 12B formed on the lower insulating layer 12A and the cathode electrode 111, and the upper insulating layer 12B. It may also be configured as the second gate electrode 313B formed thereon. The opening 14 is formed in the second gate electrode 313B, the upper insulating layer 12B, the cathode electrode 111 and the lower insulating layer 12A, and the cathode electrode 111 is formed on the sidewall of the opening 14. 111A of edges are exposed. By applying a voltage to the cathode electrode 111, the first gate electrode 13A, and the second gate electrode 313B, electrons are emitted from the edge portion 111A of the cathode electrode 111 corresponding to the electron emission portion.

For example, a method of manufacturing the edge type electron-emitting device shown in FIG. 42C will be described below with reference to FIG. 43 which is a schematic partial cross-sectional view of a support or the like.

[Step-2100]

First, a tungsten film having a thickness of about 0.2 µm is formed on the support 10 made of glass, for example, by sputtering. The tungsten film is patterned by photolithography and dry etching to form the first gate electrode 13A. Form. Next, after forming the film of the front 0.3㎛ lower insulating layer (12A) made of SiO ₂ on the lower insulating layer (12A), the cathode electrode 111 composed of the cathode electrode for a stripe-shaped conductive material layer formed on the tungsten (See FIG. 43 (A)).

[Step-2110]

Thereafter, an upper insulating layer 12B having a thickness of 0.7 μm, for example, made of SiO ₂ is formed on the entire surface, and then a stripe-shaped second gate electrode 313B is formed on the upper insulating layer 12B. (See FIG. 43 (B)). The second gate electrode 313B is made of a gas trapping material.

[Step-2120]

Next, after the resist layer 90 is formed on the entire surface, a resist opening 90A is formed to partially expose the surface of the second gate electrode 313B on the resist layer 90. The planar shape of the resist opening 90A is rectangular. The long side of a rectangle is about 100 micrometers, and the short side is several micrometers-10 micrometers. Subsequently, the second gate electrode 313B exposed on the bottom surface of the resist opening 90A is anisotropically etched, for example, by the RIE method to form the opening. Next, the upper insulating layer 12B exposed at the bottom of the opening is isotropically etched to form the opening (see FIG. 43C). Since the upper insulating layer 12B is formed using SiO ₂ , wet etching using a buffered hydrofluoric acid aqueous solution is performed. The wall surface of the opening formed in the upper insulating layer 12B retreats from the opening end surface of the opening formed in the second gate electrode 313B, but the amount of retreat at this time can be controlled by the long and short etching time. Here, wet etching is performed until the lower end of the opening formed in the upper insulating layer 12B retreats from the opening end face of the opening formed in the second gate electrode 313B.

Next, the cathode electrode 111 exposed to the bottom surface of the opening portion is dry-etched under the condition that ions are the main etching species. In dry etching, in which ions are the main etching species, ions that are charged particles can generally be accelerated by applying a bias voltage to an etched object or by interacting with a plasma and a magnetic field. Anisotropic etching advances, and the process surface of a to-be-etched object turns into a vertical wall. However, in this step, the inclined incidence component is also generated due to the presence of a slight incident component having an angle other than vertical even in the main etching species in the plasma, and the inclined incidence component also occurs by the exposure surface of the cathode electrode 111. Among them, the main etching species is incident to the region which is shielded by the openings and will not reach the ions. At this time, the probability of incidence is as high as that of the main etching species having a small incidence angle with respect to the normal of the support 10, and the probability of incidence is as low as that of the main etching species having a large incident angle.

Therefore, the position of the upper end of the opening formed in the cathode electrode 111 coincides with the lower end of the opening formed in the upper insulating layer 12B, but the position of the lower end of the opening formed in the cathode electrode 111 protrudes from the upper end thereof. It becomes That is, the thickness of the edge part 111A of the cathode electrode 111 becomes thin toward the tip end part of the protrusion direction, and the edge part 111A is sharpened. For example, by using SF ₆ as the etching gas, good processing of the cathode electrode 111 can be performed.

Next, the lower insulating layer 12A exposed on the bottom surface of the opening formed in the cathode electrode 111 is isotropically etched, and an opening is formed in the lower insulating layer 12A to complete the opening. Here, wet etching using a buffered hydrofluoric acid aqueous solution is performed. The wall surface of the opening formed in the lower insulating layer 12A retreats from the lower end of the opening formed in the cathode electrode 111. The amount of retreat at this time can be controlled by the length of the etching time. If the resist layer 90 is removed after completion of the openings 14, the structure shown in Fig. 42C can be obtained.

Embodiment 22

Embodiment 22 relates to a method for manufacturing a spin type electron-emitting device different from Embodiment 1. Hereinafter, a method of manufacturing such a spin type electron emitting device will be described with reference to FIGS. 44 to 46 which are schematic partial cross-sectional views of a support body and the like. However, this spin type electron emitting device is basically manufactured according to the following steps. In other words,

(a ') forming a cathode electrode 511 on the support 510,

(b ') forming an insulating layer 512 on the support 510 including the cathode electrode 511,

(c ') forming a gate electrode 313 on the insulating layer 512,

(d ') forming an opening 514 in which the cathode electrode 511 is exposed at the bottom of the insulating layer 512 at least;

(e ') forming a conductive material layer 521 for forming electron emission portions on the entire surface including the opening 514;

(f ') forming a mask material layer 522 on the conductive material layer 521 so as to shield an area of the conductive material layer 521 located at the central portion of the opening 514,

(g ') Under anisotropic etching conditions in which the etching rate in the direction perpendicular to the support 510 of the conductive material layer 521 is faster than the etching rate in the direction perpendicular to the support 510 of the mask material layer 522. By etching the conductive material layer 521 and the mask material layer 522, the cathode electrode (which is made of the conductive material layer 521 and whose tip is conical in the electron emitting portion 15D) is exposed in the opening 514. 511).

[Step-2200]

First, for example, a cathode electrode 511 made of chromium (Cr) is formed on a support 510 formed by forming a SiO ₂ layer having a thickness of about 0.6 μm on a glass substrate. Specifically, the cathode electrode conductive material layer made of chromium is deposited on the support 510 by, for example, a sputtering method or a CVD method, and the cathode material conductive material layer is patterned to form a plurality of cathode electrodes ( A stripe-shaped conductive material layer for the cathode electrode, including 511, extending in parallel in the column direction can be formed. The width of the conductive material layer for the cathode electrode is, for example, 50 µm, and the space between the conductive material layer for the cathode electrode is, for example, 30 µm. Thereafter, an insulating layer 512 made of SiO ₂ is formed on the cathode electrode 511 and the support 510 by a plasma CVD method using TEOS (tetraethoxysilane) as the source gas. . The thickness of the insulating layer 512 is about 1 micrometer. Next, a gate electrode 313 made of a layer constituting a stripe type gate electrode extending in parallel to the direction orthogonal to the cathode electrode conductive material layer is formed over the insulating layer 512.

Next, an opening 514 penetrating through the layer constituting the gate electrode and the insulating layer 512 in the electron emission region overlapping the layer constituting the gate electrode and the layer constituting the gate electrode. To form. The planar shape of the opening 514 is, for example, circular with a diameter of 0.3 μm. The openings 514 are usually formed in hundreds to one thousand in one pixel region (one electron emission region). To form the openings 514, a resist layer formed by a conventional photolithography technique is used as a mask, and an opening 514 is formed first in a layer constituting the gate electrode, and then an opening in the insulating layer 512. 514 is formed. After completion of the RIE, the resist layer is removed by ashing (see FIG. 44 (A)).

[Step-2210]

Next, the adhesion layer 520 is formed in the whole surface by sputtering method (refer FIG. 44 (B)). The adhesion layer 520 is formed between the insulating layer 512 exposed to the non-formed portion of the layer constituting the gate electrode or the sidewall surface of the opening 514 and the conductive material layer 521 formed entirely in the following process. It is a layer formed to increase the adhesiveness of the. Assuming that the conductive material layer 521 is formed of tungsten, the adhesion layer 520 made of tungsten is formed to a thickness of 0.07 μm by the DC sputtering method.

[Step-2220]

Next, a conductive material layer 521 for forming an electron emission portion made of tungsten having a thickness of about 0.6 mu m is formed on the entire surface including the opening 514 by a hydrogen reduction pressure reduction CVD method (see Fig. 45A). ). The concave portion 521A reflecting the step between the top surface and the bottom surface of the opening 514 is formed on the surface of the formed conductive material layer 521.

[Step-2230]

Next, a mask material layer 522 is formed so as to shield a region of the conductive material layer 521 (specifically, the recessed portion 521A) located at the center portion of the opening 514. Specifically, first, a resist layer having a thickness of 0.35 mu m is formed on the conductive material layer 521 as the mask material layer 522 by the spin coating method (see FIG. 45 (B)). The mask material layer 522 absorbs the concave portion 521A of the conductive material layer 521, resulting in an almost flat surface. Next, the mask material layer 522 is etched by the RIE method using an oxygen-based gas. This etching ends when the flat surface of the conductive material layer 521 is exposed. Thereby, the mask material layer 522 remains so that the recessed part 521A of the conductive material layer 521 can be flattened (refer FIG. 46 (A)).

[Step-2240]

Next, the conductive material layer 521, the mask material layer 522, and the adhesion layer 520 are etched to form a conical electron emitting portion 15D (see FIG. 46 (B)). The etching of these layers is performed under anisotropic etching conditions in which the etching rate of the conductive material layer 521 is faster than the etching rate of the mask material layer 522. Etching conditions are illustrated in Table 4 below.

[Etching Conditions of the Conductive Material Layer 521] SF6 flow rate 150SCCM O2 flow rate 30SCCM Ar flow 90SCCM pressure 35 Pa RF power 0.7 kW (13.56 MHz)

[Step-2250]

Thereafter, when the sidewall surface of the opening 514 formed in the insulating layer 512 is retracted in the opening 514 under isotropic etching conditions, the electron-emitting device shown in Fig. 47 is completed. Isotropic etching can be performed by dry etching which uses radical as a main etching species like chemical dry etching, or wet etching which uses etching liquid. As the etching solution, for example, a 1: 100 (volume ratio) mixed solution of 49% hydrofluoric acid aqueous solution and pure water can be used.

Here, the mechanism in which the electron emission section 15D is formed in [Step-2240] will be described with reference to FIG. 48. FIG. 48 (A) is a schematic diagram showing how the surface profile of an object to be etched changes over time as the etching progresses, and FIG. 48 (B) is the thickness of the object to be etched at the center of the opening time 514 and the etching time. This graph shows the relationship with. The thickness of the mask material layer at the center of the opening 514 is h _p , and the height of the electron emitting part 15D at the center of the opening 514 is h _e .

Under the etching conditions shown in Table 4, the etching rate of the conductive material layer 521 is naturally faster than the etching rate of the mask material layer 522 made of the resist material. In the region where the mask material layer 522 does not exist, the conductive material layer 521 immediately begins to be etched, and the surface of the etched object descends quickly. In contrast, in the region where the mask material layer 522 exists, etching of the conductive material layer 521 below does not start unless the mask material layer 522 is first removed, so that the mask material layer 522 is formed. as long as the etching is reduced in the etched water thickness speed is slow, (h _p decreasing interval), the mask material layer 522 is a non-reduced speed of the etched water thick mask material layer 522 in the lost point is present The same speed as the area not to be used (h _e reduction period). The start time of the h _p reduction interval is the slowest at the center of the opening 514 where the mask material layer 522 is at its maximum thickness, and accelerates toward the periphery of the thin opening 514 of the mask material layer 522. In this way, a cone-shaped electron emitting portion 15D is formed.

The ratio of the etching rate of the conductive material layer 521 to the etching rate of the mask material layer 522 made of resist material is referred to as " to resist selection ratio. &Quot; This large resist selectivity ratio will be explained with reference to FIG. 49 as an important factor for determining the height and shape of the electron emission section 15D. FIG. 49A shows the case where the resistivity selection ratio is relatively small, FIG. 49C shows the case where the resistivity selection ratio is relatively large, and FIG. 49B shows the shape of the electron emitting portion 15D in the middle thereof. Indicates. It can be seen that the larger the resistivity selection ratio, the greater the decrease in film thickness of the conductive material layer 521 as compared to the decrease in film thickness of the mask material layer 522, resulting in a higher and sharper electron emission portion 15D. have. The resistivity selection ratio decreases when the ratio of the O ₂ flow rate to the SF ₆ flow rate is increased. In addition, when using an etching apparatus capable of changing the incident energy of ions by using a substrate bias in combination, a large resist selection ratio can be lowered by increasing the RF bias power or lowering the frequency of the AC power supply for bias application. . The value of the resist ratio is selected to 1.5 or more, preferably 2 or more, more preferably 3 or more.

In addition, although it is necessary to ensure high selectivity with respect to the gate electrode 313 and the cathode electrode 511 in the said etching, on the conditions shown in Table 4, there is no problem at all. This is because the material constituting the gate electrode 313 or the cathode electrode 511 is hardly etched in the fluorine-based etching species if only the material is appropriately selected, and in this condition, an etching selectivity of 10 or more is usually obtained.

Embodiment 23

Embodiment 23 is a variation of Embodiment 22. In the manufacturing method of Embodiment 23, the region of the conductive material layer blocked by the mask material layer can be made narrower than the manufacturing method in Embodiment 22. That is, in the manufacturing method of the spin type electron-emitting device according to the twenty-third embodiment, an approximately funnel comprising a mold part and an enlarged part connected to the upper end of the mold part by reflecting a step between the upper end face and the bottom face of the opening part. After the recess was formed on the surface of the conductive material layer and the mask material layer was formed on the entire surface of the conductive material layer in step (f '), the mask material layer and the conductive material layer were in-plane parallel to the surface of the support. By removing from, the mask material layer is left in the mold portion.

Hereinafter, the manufacturing method of the spin type electron emission element in Embodiment 23 is demonstrated with reference to FIGS. 50-52 which is schematic partial sectional drawing of a support body.

[Step-2300]

First, the cathode electrode 511 is formed on the support 510. The conductive material layer for the cathode electrode including the cathode electrode 511 is, for example, a TiN layer (0.1 μm thick), a Ti layer (5 nm thick), and an Al—Cu layer (0.4 μm thick) by a DC sputtering method. , A Ti layer (thickness 5 nm), a TiN layer (thickness 0.02 μm), and a Ti layer (thickness 0.02 μm) are laminated in this order to form a laminated film, and then the laminated film is patterned to form a stripe. In the figure, the cathode electrode 511 is shown as a single layer. Next, on the front surface, specifically, the insulating layer 512 of 0.7 micrometers in thickness is formed on the support body 510 and the cathode electrode 511 by plasma CVD method which uses TEOS (tetraethoxysilane) as a source gas. do. Subsequently, a layer constituting a stripe type gate electrode including the gate electrode 313 is formed on the insulating layer 512.

Further, an etching stop layer 523 having a thickness of, for example, SiO ₂ , formed of SiO ₂ is formed on the entire surface. The etch stop layer 523 is not an indispensable member in the function of the electron-emitting device, and serves to protect the gate electrode 313 during the etching of the conductive material layer 521 performed in a later step. In addition, when the gate electrode 313 can have sufficiently high etching tolerance with respect to the etching conditions of the conductive material layer 521, the etching stop layer 523 may be omitted. Thereafter, an opening 514 through which the cathode electrode 511 is exposed is formed through the etching stop layer 523, the gate electrode 313, and the insulating layer 512 by the RIE method. In this way, the state shown in FIG. 50 (A) is obtained.

[Step-2310]

Next, an adhesion layer 520 made of, for example, tungsten having a thickness of 0.03 µm is formed on the entire surface including the inside of the opening 514 (see FIG. 50 (B)). Subsequently, a conductive material layer 521 for forming an electron emission portion is formed on the entire surface including the inside of the opening 514. However, in the conductive material layer 521 of the twenty-third embodiment, the thickness of the conductive material layer 521 is selected so that the concave portion 521A deeper than the concave portion 521A described in the manufacturing method of the twenty-second embodiment is formed on the surface. do. That is, by setting the thickness of the conductive material layer 521 appropriately, the enlarged part which connects to the mold part 521B and the upper end of this mold part 521B reflects the step | step difference between the top surface and the bottom surface of the opening part 514. An approximately funnel-shaped recess 521A made of 521C can be formed on the surface of the conductive material layer 521.

[Step-2320]

Next, a mask material layer 522 made of copper (Cu) having a thickness of about 0.5 μm is formed on the entire surface of the conductive material layer 521 by, for example, electroless plating (see FIG. 51A). ). Electroless plating conditions are shown in Table 5 below.

Plating amount Copper lactate (CuSO ₄ · 5H ₂ O) 7 g / liter formaline (37% HCHO) 20 ml / liter sodium hydroxide (NaOH) 10 g / liter sodium tartrate 20 g / liter Plating bath temperature 50 ℃

[Step-2330]

Thereafter, the mask material layer 522 and the conductive material layer 521 are removed in a plane parallel to the surface of the support 510, thereby leaving the mask material layer 522 in the mold portion 521B (FIG. 51). (B)). This removal can be performed, for example by chemical mechanical polishing (CMP method).

[Step-2340]

Next, under the anisotropic etching conditions in which the etching rate of the conductive material layer 521 and the adhesion layer 520 is faster than the etching rate of the mask material layer 522, the conductive material layer 521 and the mask material layer 522 The adhesion layer 520 is etched. As a result, an electron emission portion 15D having a conical shape is formed in the opening 514 (see Fig. 52A). And when the mask material layer 522 remains in the front-end | tip of the electron emission part 15D, the mask material layer 522 can be removed by the wet etching using a dilute hydrofluoric acid aqueous solution.

[Step-2350]

Next, when the sidewall surface of the opening portion 514 formed in the insulating layer 512 is retracted inside the opening portion 514 under isotropic etching conditions, the electron-emitting device shown in Fig. 52B is completed. The isotropic etching may be the same as that described in the manufacturing method of Embodiment 22.

By the way, in the electron emission part 15D formed by the manufacturing method of Embodiment 23, compared with the electron emission part 15D formed by the manufacturing method of Embodiment 22, a sharper cone shape is achieved. This is due to the difference between the shape of the mask material layer 522 and the ratio of the etching rate of the conductive material layer 521 to the etching rate of the mask material layer 522. This difference will be described with reference to FIG. 53. Fig. 53 shows how the surface profile of an object to be etched changes over time. FIG. 53A shows a case where a mask material layer 522 made of copper is used, and FIG. 53B shows a case where a mask material layer 522 made of a resist material is used. For simplicity, it is assumed that the etching rate of the conductive material layer 521 and the etching rate of the adhesion layer 520 are the same, and the illustration of the adhesion layer 520 is omitted in FIG. 53.

In the case where the mask material layer 522 made of copper is used (see FIG. 53 (A)), since the etching rate of the mask material layer 522 is sufficiently slow compared with the etching rate of the conductive material layer 521, during etching The mask material layer 522 is not lost, and therefore, the tip portion can form the sharp electron emission portion 15D. On the other hand, when the mask material layer 522 made of resist material is used (see FIG. 53B), the etching rate of the mask material layer 522 is not very slow compared to the etching rate of the conductive material layer 521. Since the mask material layer 522 is easily lost during etching, the conical shape of the electron emission portion 15D after the mask material layer disappears tends to be slowed down.

In addition, the mask material layer 522 remaining in the mold part 521B has a merit that the shape of the electron emitting part 15D is hard to change even if the depth of the mold part 521B changes slightly. That is, the depth of the mold part 521B may be changed by the depth of the conductive material layer 521 or the nonuniformity of the step coverage, but the width of the mold part 521B is almost constant regardless of the depth, so that the mask material layer ( The width of 522 is also substantially constant, and no big difference occurs in the shape of the finally formed electron-emitting part 15D. In contrast, in the mask material layer 522 remaining in the concave portion 521A, the width of the mask material layer also changes in the shallow and deep portions of the concave portion 521A, so that the concave portion 521A is shallow and the mask material. If the thickness of the layer 522 is thin, the cone-shaped slowing of the electron emission portion 15D starts earlier. The electron emission efficiency of the electron-emitting device also varies depending on the potential difference between the gate electrode and the cathode electrode, the distance between the gate electrode and the cathode electrode, and the shape of the tip of the electron-emitting part, in addition to a function of the work material of the electron-emitting part. For this reason, it is preferable to select the shape and etching rate of a mask material layer as mentioned above as needed.

Embodiment 24

The manufacturing method of Embodiment 24 is a modification of the manufacturing method of the spin type electron-emitting device of Embodiment 23. In the manufacturing method of the twenty-fourth embodiment, in the step (e '), the substantially funnel-shaped recess consisting of the mold portion and the enlarged portion connected to the upper end of the mold portion, reflecting the step between the top surface and the bottom surface of the opening, is a conductive material layer The mask material layer is left on the mold by removing the mask material layer on the conductive material layer and in the enlarged portion after forming the mask material layer on the entire surface of the conductive material layer in the step (f '). . Hereinafter, a method of manufacturing the spin type electron-emitting device in Embodiment 24 will be described with reference to FIGS. 54 and 55 which are schematic partial cross-sectional views of a support body and the like.

[Step-2400]

First, the formation of the mask material layer 522 shown in FIG. 51A is performed in the same manner as in [Step-2300] to [Step-2320] of the manufacturing method of Embodiment 23, and then on the conductive material layer 521. By removing only the mask material layer 522 in the enlarged portion 521C, the mask material layer 522 is left in the mold portion 521B (see FIG. 54 (A)). At this time, for example, by performing wet etching using an aqueous solution of difluoric acid, only the mask material layer 522 made of copper can be selectively removed without removing the conductive material layer 521 made of tungsten. The height of the mask material layer 522 remaining in the mold portion 521B depends on the etching time, but this etching time is so long as the portion of the mask material layer 522 embedded in the enlarged portion 521C is sufficiently removed. As for, it doesn't require much rigidity. Because the discussion of the height of the mask material layer 522 is substantially the same as the discussion of the shallow and depth of the mold 521B described above with reference to Fig. 53A, the height of the mask material layer 522 is This is because the shape of the electron emitting portion 15D finally formed is not significantly affected.

[Step-2410]

Next, the conductive material layer 521, the mask material layer 522, and the adhesion layer 520 are etched in the same manner as in the manufacturing method of the twenty-third embodiment, and the electron emission portion 15D as shown in FIG. 54 (B). ). Although the electron emission part 15D may have a conical shape as a whole as shown in FIG. 52 (A), of course, a modification is shown in FIG. 54 (B) in which only the tip portion has a conical shape. Such a shape may occur when the height of the mask material layer 522 embedded in the mold part 521B is low, or when the etching rate of the mask material layer 522 is relatively high, but as the electron emission part 15D. There is no lower function.

[Step-2420]

Thereafter, when the sidewall surface of the opening 514 formed in the insulating layer 512 is retracted in the opening 514 under isotropic etching conditions, the electron-emitting device shown in Fig. 55 is completed. The isotropic etching may be the same as that described in the manufacturing method of Embodiment 22.

Embodiment 25

The manufacturing method of Embodiment 25 is a modification of the manufacturing method of Embodiment 22. Some schematic cross-sectional view of Embodiment 25 is shown in FIG. 56. Embodiment 25 differs from Embodiment 22 in that an electron emission part is comprised from the base 530 and the cone-shaped electron emission part 15D laminated | stacked on the base 530. Here, the base 530 and the electron emitting portion 15D are made of different conductive materials. Specifically, the base 530 is a member for adjusting the distance between the electron emission section 15D and the opening end of the gate electrode 313, and has a function as a resistor layer and is a polysilicon layer containing impurities. Consists of. The electron emission section 15D is made of tungsten and has a cone shape, more specifically, a circular cone shape. An adhesion layer 520 made of TiN is formed between the base 530 and the electron emission portion 15D. The adhesion layer 520 is not an indispensable component in the function of the electron emission unit, and is formed for manufacturing reasons. An opening 514 is formed by the insulating layer 512 being cut out from directly under the gate electrode 313 over the upper end of the base 530.

Hereinafter, the manufacturing method of Embodiment 25 is demonstrated with reference to FIGS. 57-59 which is schematic partial sectional drawing of a support body.

[Step-2500]

First, the formation of the opening 514 is performed in the same manner as in [Step-2200] of the manufacturing method of the twenty-second embodiment. Subsequently, a conductive material layer 530A for base formation is formed on the entire surface including the inside of the opening 514. The conductive material layer 530A also functions as a resistor layer, is composed of a polysilicon layer, and can be formed by plasma CVD. Subsequently, a planarization layer 531 made of a resist layer is formed on the entire surface of the resist layer so as to have a substantially flat surface (see Fig. 57A). Next, both layers are etched under the condition that the etching rates of the planarization layer 531 and the conductive material layer 530A are substantially the same, and the bottom of the opening 514 is embedded into the base 530 having a flat top surface (FIG. 57). (B)). Etching can be performed by the RIE method using the etching gas containing a chlorine gas and oxygen type gas. Since the surface of the conductive material layer 530A is first flattened with the flattening layer 531 and then etched, the upper surface of the base 530 is flattened.

[Step 2510]

Next, an adhesion layer 520 is formed on the entire surface including the remainder of the opening 514, and a conductive material layer 521 for forming an electron emission portion including the remainder of the opening 514 is formed. The remainder of 514 is embedded in the conductive material layer 521 (see FIG. 58 (A)). The adhesion layer 520 is a TiN layer having a thickness of 0.07 µm formed by the sputtering method, and the conductive material layer 521 is a 0.6 µm thick tungsten layer formed by the reduced pressure CVD method. The concave portion 521A is formed on the surface of the conductive material layer 521 to reflect the level difference between the top surface and the bottom surface of the opening 514.

[Step 2510]

Next, a mask material layer 522 made of a resist layer is formed on the entire surface of the conductive material layer 521 so as to have a substantially flat surface (see FIG. 58 (B)). The mask material layer 522 absorbs the recessed portions 521A of the surface of the conductive material layer 521 to form a flat surface. Next, the mask material layer 522 is etched by the RIE method using an oxygen-based gas (see FIG. 59 (A)). This etching ends when the flat surface of the conductive material layer 521 is exposed. Accordingly, the mask material layer 522 remains flat in the concave portion 521A of the conductive material layer 521, and the mask material layer 522 is formed of the conductive material layer 521 positioned at the center of the opening 514. It is formed to shield the area.

[Step-2350]

Next, the conductive material layer 521, the mask material layer 522, and the adhesion layer 520 are etched together in the same manner as in [Step-2240] of the manufacturing method of Embodiment 22. An electron emission portion 15D and an adhesion layer 520 having a conical shape corresponding to the size of the resist selectivity are formed, thereby completing the electron emission portion (see FIG. 59 (B)). Thereafter, if the sidewall surface of the opening 514 formed in the insulating layer 512 is retracted inside the opening 514, the electron-emitting device shown in Fig. 56 can be obtained.

Embodiment 26

The manufacturing method of Embodiment 26 is a modification of the manufacturing method of Embodiment 23. Some schematic cross section of Embodiment 26 is shown to FIG. 61 (B). Embodiment 26 differs from Embodiment 23 in that the electron emitting portion is constituted of the base 530 and the conical electron emitting portion 15D stacked on the base 530 in the same manner as in Embodiment 24. have. Here, the base 530 and the electron emitting portion 15D are made of different conductive materials. Specifically, the base 530 is a member for adjusting the distance between the electron emission section 15D and the opening end of the gate electrode 313, and has a function as a resistor layer and is a polysilicon layer containing impurities. Consists of. The electron emission section 15D is made of tungsten and has a cone shape, more specifically, a circular cone shape. An adhesion layer 520 made of TiN is formed between the base 530 and the electron emission portion 15D. The adhesion layer 520 is not an indispensable component in the function of the electron emission unit, and is formed for manufacturing reasons. An opening 514 is formed by the insulating layer 512 being cut out from directly under the gate electrode 313 over the top surface of the base 530.

Hereinafter, the manufacturing method of Embodiment 26 is demonstrated with reference to FIG. 60 and 61 which are schematic partial sectional views of a support body.

[Step-2600]

First, the formation up to the opening 514 is performed in the same manner as in [Step-2200] of the manufacturing method of the twenty-second embodiment. Next, the base material 530 which embeds the bottom part of the opening part 514 can be formed by forming the base material conductive material layer in the whole surface containing the inside of the opening part 514, and etching a conductive material layer. And although the base 530 shown has the planarized surface, the surface may be recessed. The base 530 having the flattened surface can be formed by the same process as that of [Step-2500] of the manufacturing method of the 25th embodiment. Further, the adhesion layer 520 and the conductive material layer 521 for forming the electron emission portion are sequentially formed on the entire surface including the remainder of the opening 514. At this time, the substantially funnel-shaped recess 521A which consists of the mold part 521B which reflected the step | step difference between the upper end surface and the bottom part of the remainder of the opening part 514, and the enlarged part 521C which connects to the upper end of this mold part 521B. The thickness of the conductive material layer 521 is selected so that) is generated on the surface of the conductive material layer 521. Next, a mask material layer 522 is formed on the conductive material layer 521. This mask material layer 522 is formed using copper, for example. 60 (A) has shown the state to which the process to here is complete | finished.

[Step-2610]

Next, the mask material layer 522 is left in the mold portion 521B by removing the mask material layer 522, the conductive material layer 521, and the surface parallel to the surfaces of the support 510 (FIG. 60). (B)). This removal can be performed by chemical mechanical polishing (CMP method) similarly to [Step-2330] of the twenty-third embodiment.

[Step-2620]

Next, when the conductive material layer 521, the mask material layer 522, and the adhesion layer 520 are etched, the electron emission portion 15D having a conical shape corresponding to the size of the large resist selectivity is formed according to the above-described mechanism. Is formed. Etching of these layers can be performed similarly to [Step-2340] of the manufacturing method of the twenty-third embodiment. The electron emission portion is formed by the electron emission portion 15D and the base 530 and the adhesion layer 520 remaining between the electron emission portion 15D and the base 530. Although the electron emission part may have a conical shape as a whole, of course, it is OK, but FIG. 61 (A) showed a state in which a part of the base 530 remained so as to embed the bottom of the opening 514. Such a shape may occur when the height of the mask material layer 522 embedded in the mold part 521B is low, or when the etching rate of the mask material layer 522 is relatively high, but it is inferior in function as an electron emission part. There is no.

[Step-2630]

Thereafter, when the sidewall surface of the insulating layer 512 is retracted in the opening 514 under isotropic etching conditions, the electron-emitting device shown in Fig. 61B is completed. The isotropic etching conditions may be the same as those described in the manufacturing method of Embodiment 22.

Embodiment 27

The manufacturing method of Embodiment 27 is a modification of the manufacturing method of the spin type electron-emitting device of Embodiment 24. Embodiment 27 differs from Embodiment 24 in that the electron emitting portion is constituted of the base 530 and the conical electron emitting portion 15D stacked on the base 530 in the same manner as in Embodiment 24. have. Hereinafter, a method of manufacturing the spin type electron-emitting device of Embodiment 27 will be described with reference to FIG. 62 which is a schematic partial sectional view of a support or the like.

[Step-2700]

The formation of the mask material layer 522 is performed in the same manner as in [Step-2600] of the manufacturing method of Embodiment 26. FIG. Thereafter, only the mask material layer 522 on the conductive material layer 521 and in the enlarged portion 521C is removed, leaving the mask material layer 522 in the mold portion 521B (see FIG. 62). For example, only the mask material layer 522 made of copper can be selectively removed without performing wet etching using an aqueous solution of difluoric acid, without removing the conductive material layer 521 made of tungsten. Subsequent etching of the conductive material layer 521 and the mask material layer 522 and isotropic etching of the insulating layer 512 can be performed in the same manner as in the manufacturing method of the 26th embodiment.

As mentioned above, although this invention was demonstrated according to embodiment of this invention, this invention is not limited to this. The details of the configuration of the electron-emitting device and the flat panel display device described in the embodiment of the present invention are only examples and can be changed as appropriate.

In addition, various materials used in the manufacture of the electron-emitting device are also illustrative and can be changed as appropriate. In the electron-emitting device, only one opening has been described in which one electron-emitting part corresponds to one opening. However, depending on the structure of the electron-emitting device, a plurality of electron-emitting parts correspond to one opening or a plurality of openings. One electron emission section may be in a corresponding form. It is also possible to form a plurality of openings in the layers constituting the gate electrode, to form one opening in communication with the plurality of openings in the insulating layer, and to form one or a plurality of electron emission portions.

The driving method of the flat panel display device is not limited to the method described in the embodiment of the invention. For example, the shape of the gate electrode or the conductive material layer for the gate electrode is not limited to the stripe type. In the flat panel display, all the gate electrodes constituting the first panel P ₁ are formed of a single plate type (sheet) electrode constituent layer (for example, a single layer structure made of a gas trapping material, or a conductive material or an insulating material). It can also be set as the structure comprised by the 1st layer which consists of a laminated structure of the 2nd layer (gas capture layer) which consists of a gas trapping material. In such a configuration, the cathode electrode has a rectangular planar shape, for example, corresponding to the pixel. In some cases, it is not necessary to form a spacer for each cold cathode field emission device.

63 shows a circuit for driving a flat panel display having such a configuration. This circuit is composed of a control circuit 30 electrically connected to an electron emission section (more specifically, a cathode electrode 11), and a scanning circuit (not shown) electrically connected to the gate electrode 313. It is. The control circuit 30 is composed of a data circuit 130A and a scan circuit 130B. Each cathode electrode 11 is connected to the data circuit 130A through a switching element 130C made of a MOS transistor. The gate portion of the MOS transistor is connected to the scan circuit 130B. The MOS transistor is, for example, an N-channel MOS transistor, and functions as a switching element in which on / off control is performed in accordance with control signals applied from the scan circuit 130B and the data circuit 130A. When the switching element 130C is brought into a conductive state, a voltage is applied to the cathode electrode 11 connected to the switching element 130C in accordance with a control signal applied from the scan circuit 130B and the data circuit 130A. You may comprise a MOS transistor by a P-channel MOS transistor. Alternatively, the MOS transistor may be replaced with another switching means having the same switching function as the MOS transistor.

Then, the electron emission regions arranged in the row direction (X direction) are sequentially operated in the column direction (Y direction). Specifically, a constant voltage V _G is applied from the gate electrode control circuit to one flat plate (sheet) electrode constituent layer on which the gate electrode 313 is formed. On the other hand, by setting the desired switching element 130C in the conductive state by the control circuit 30, the voltage of 0 ≦ [V _C-MAX to V _C-MIN ] (<V _G ) is applied to each of the cathode electrodes 11. Is authorized. Accordingly, in the electron emission region consisting of the gate electrode 313 to which the voltage V _G is applied and the respective cathode electrode 11 to which the voltages V _{C -MAX} to V _{C -MIN} are applied, (V _G In the case of -V _C-MIN , the potential difference ΔV is maximized, and the amount of electron emission from the electron emission region is maximized, and these electrons are attracted to the anode electrode 23 and collide with the phosphor layer 21. . As a result, the light emission luminance of the phosphor layer corresponding to the electron emission region is the highest. On the other hand, when (V _G -V _C-MAX ), the potential difference ΔV becomes minimum, electrons are not emitted from the electron emission region, and the phosphor layer corresponding to the electron emission region does not emit light. The emission material of the phosphor layer can be controlled by applying a voltage of V _{C -MAX} to V _{C -MIN} to the conductive material layer for the cathode electrode, respectively.

In addition, all the cathode electrodes constituting the first panel P ₁ of the flat panel display device are formed of one flat sheet (sheet) conductive material, and the gate electrode 313 is a stripe type conductive material layer for the gate electrode. It can also be set as the structure which consists of. That is, the gate electrode 313 has a planar shape of, for example, a rectangle corresponding to the pixel. As shown in FIG. 64, a circuit for driving a flat panel display device is controlled electrically connected to an electron emission unit (specifically, a cathode electrode) (not shown), and electrically connected to a gate electrode 313. FIG. The circuit 31 can be comprised. The control circuit 31 is composed of a data circuit 131 and a scan circuit 131B. The gate electrode 313 is connected to the data circuit 131A through a switching element 131C made of a MOS transistor. The gate portion of the MOS transistor is connected to the scan circuit 131B. The MOS transistor is, for example, an N-channel MOS transistor, and functions as a switching element in which on / off control is performed in accordance with scan signals applied from the scan circuit 131B and the data circuit 131A. When the switching element 131C is brought into a conductive state, a voltage is applied to the gate electrode 313 connected to the switching element 131C in accordance with a control signal applied from the scan circuit 131B and the data circuit 131A. You may comprise a MOS transistor by a P-channel MOS transistor. Alternatively, the MOS transistor may be replaced with another switching means having the same switching function as the MOS transistor.

Also in this surface type display device, the electron emission regions arranged in the row direction (X direction) are sequentially operated in the column direction (Y direction). Specifically, a constant voltage V _G is applied from the cathode electrode control circuit to one flat plate (sheet) electrode constituent layer on which the cathode electrode 11 is formed. On the other hand, by setting the desired switching element 130C in the conductive state by the control circuit 31, a voltage of V _C &lt; [V _G-MAX to V _G-MIN ] is applied to each of the gate electrodes 313. Accordingly, in the electron emission region composed of the cathode electrode 11 to which the voltage V _C is applied and the respective gate electrode 313 to which the voltages V _G-MAX to V _G-MIN are applied, (V _{G) When -MAX} -V _C ), the potential difference ΔV is maximized, and the amount of electron emission from the electron emission region is maximized, and these electrons are attracted to the anode electrode 23 and collide with the phosphor layer 21. . As a result, the light emission luminance of the phosphor layer corresponding to the electron emission region is the highest. On the other hand, when (V _G-MIN -V _C ), the potential difference DELTA V is minimized, and electrons are not emitted from the electron emission region, and the phosphor layer corresponding to the electron emission region does not emit light. By applying a voltage of V _G-MAX to V _G-MIN to each of the gate electrodes 13, the light emission luminance of the phosphor layer can be controlled.

Further, the electron emission region can be formed from a device commonly referred to as a surface conduction electron emission device. This surface conduction electron-emitting device is, for example, on a substrate made of glass (SnO ₂ ), gold (Au), indium oxide (In ₂ O ₃ ) / stone oxide (SnO ₂ ), carbon, palladium oxide A pair of electrodes made of a conductive material such as (PdO) and having a small area and arranged at a predetermined interval (gap) is formed in a matrix. On each electrode, a carbon thin film is formed. The row direction wiring is connected to one electrode in the pair of electrodes, and the column direction wiring is connected to the other electrode in the pair of electrodes. By applying a voltage to the pair of electrodes, an electric field is applied to the opposite carbon thin films with a gap therebetween, and electrons are emitted from the carbon thin films. By impinging these electrons on the phosphor layer on the second panel (anode panel), the phosphor layer is excited to emit light, thereby obtaining a desired image.

In the embodiment of the present invention, the converging electrodes 47 and 147 are formed above the gate electrode through the second insulating layer 46, but as shown in FIG. 65, the converging electrode (through the vacuum layer above the gate electrode) 247) may be formed. In this case, the structure of the converging electrode 247 can be made the same structure as the converging electrode 147 in Embodiment 10. FIG. The gate electrode 313 can also have the same structure as described in the embodiment of the present invention, and in some cases, the gate electrode 313 may be a conventional structure. The convergence electrode 247 can be comprised, for example with one sheet-like (sheet | sheet) material. These procedures electrode 247 is, for example, is fixed to the second panel (P _2), the second panel (P ₂₎ through a support member 248 formed on the periphery of the. The converging electrode 247 also has a single layer structure made of a gas trapping material (for example, made of titanium alloy having a thickness of 50 µm), or at least a first layer made of a conductive material or an insulating material, and a second layer made of a gas trapping material. It can be set as the structure which has a laminated structure with. The latter specific configuration may be the same as the gate electrode described with reference to FIGS. 19 and 20. However, in the case where the converging electrode 274 has a laminated structure, it is a viewpoint that the second layer made of the gas trapping material toward the cathode electrode 11 maintains the vacuum exhaust state around the cathode electrode 11 in a better state. Preferred at That is, it is preferable to reverse the stacking order of the first layer 113A and the second layer 113B in FIGS. 19A, 20A, B, and C. FIG. An opening may be formed in each of the electron-emitting devices in the converging electrode 247, and one opening may be formed in a plurality of electron-emitting devices (for example, one pixel).

As apparent from the above description, the getter of the present invention has a large effective area that exhibits a gas trapping effect, and can achieve excellent gas trapping efficiency as compared with a conventional getter. In the flat display device of the present invention, since the getter is formed in at least one effective area of the first panel and the second panel, the gas is captured in comparison with the conventional flat display device in which the getter is formed only in one area of the invalid area. As a result of the improved efficiency, the lifespan and image quality of the flat panel display device are greatly improved. The gas generated in the vacuum layer is captured by the gate electrode, the convergence electrode, or the getter, and the vacuum layer can be maintained in a high vacuum atmosphere. Therefore, for example, even if gas molecules, ions, or the like are emitted from the phosphor layer, they can be prevented from colliding with the electron emitting portion as a result of being captured by the gate electrode, the converging electrode, or the getter. As a result, the occurrence of local discharge can be prevented, and the change in the function of work on the surface of the electron emission section and the deterioration of the electron emission section can be prevented, so that the life of the electron emission section can be extended and the image display can be achieved. This prevents deterioration and can stabilize the operation. In addition, since there is no need to form a getter material installation chamber as in the prior art, the structure can be simplified. In the manufacturing method according to the third or fourth aspect of the present invention, when the gate electrode or the convergent electrode of the cold cathode field emission display device and the getter are formed in different patterns, the effective area of the getter can be further increased. It becomes possible to do it.

Claims (85)

A getter formed on a base and having a concave-convex or uneven surface or formed of a porous body and a gas trapping layer formed on the support member along the surface of the support member. The method of claim 1, A support member having irregularities on its surface is a getter composed of substantially hemispherical silicon particles. The method of claim 1, A support member made of a porous body is a getter made of at least one material selected from the group consisting of silicon oxide, silicon nitride and silicon oxynitride. A flat panel display device having an effective area in which a first panel and a second panel are disposed to face each other with a vacuum layer interposed therebetween, and in which pixels are arranged, wherein at least one effective area of the first panel and the second panel includes a vacuum layer. A flat panel display device having a getter for maintaining a degree of vacuum. The method of claim 4, wherein The first panel has a cold cathode field emission device in the effective area, the second panel has an anode electrode and a phosphor layer in the effective area, the cold cathode field emission device, (A) an insulating layer formed on the support, (B) a gate electrode formed on the insulating layer, (C) an opening penetrating the gate electrode and formed in the insulating layer, and (D) an electron emission portion formed in the opening Made up of And the getter is formed on an insulating layer between the gate electrode and / or between adjacent gate electrodes. The method of claim 5, The getter is composed of a support member having irregularities on the surface or made of a porous body and a gas trapping layer formed on the support member along the surface of the support member, wherein the support member is insulated between the gate electrode and / or the adjacent gate electrode. Flat display device formed on the layer. The method of claim 6, A flat display device having an uneven surface on the surface is formed of substantially hemispherical silicon particles. The method of claim 6, A support member made of a porous body is a flat display device comprising at least one material selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride. The method of claim 5, A cathode electrode is formed on the support; An insulating layer is formed on the cathode electrode and the support; A flat display device wherein an electron emission portion is formed on a cathode electrode positioned at a bottom portion of an opening. The method of claim 5, An electron emission layer is formed on the support; An insulating layer is formed on the electron emission layer and the support; A flat display device wherein the electron emission layer located at the bottom of the opening corresponds to the electron emission portion. The method of claim 5, The insulating layer covers the electron emission layer; The opening penetrates the electron emitting layer; The flat display device of which an electron emission part comprises an end portion of an electron emission layer exposed on a sidewall surface of the opening. The method of claim 4, wherein The first panel has a cold cathode field emission device in the effective area, the second panel has an anode electrode and a phosphor layer in the effective area, the cold cathode field emission device, (A) an insulating layer formed on the support, (B) a gate electrode formed on the insulating layer, (C) a second insulating layer formed on the gate electrode and the insulating layer, (D) a converging electrode formed on the second insulating layer, (E) an opening penetrating through the converging electrode, the second insulating layer and the gate electrode, and formed in the insulating layer, (F) an electron emission portion formed in the opening Made up of And the getter is formed on the condensation electrode and / or on the second insulating layer between adjacent condensation electrodes. The method of claim 12, The getter is composed of a support member having irregularities on the surface or made of a porous body, and a gas trapping layer formed on the support member according to the surface of the support member, wherein the support member is formed on the convergence electrode and / or between adjacent convergence electrodes. 2 Flat display device formed on an insulating layer. The method of claim 13, A flat display device having an uneven surface on the surface is formed of substantially hemispherical silicon particles. The method of claim 13, A support member made of a porous body is a flat display device comprising at least one material selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride. The method of claim 12, A cathode electrode is formed on the support; An insulating layer is formed on the cathode electrode and the support; The electron emission unit is formed on the cathode electrode positioned at the bottom of the opening. The method of claim 12, An electron emission layer is formed on the support; An insulating layer is formed on the electron emission layer and the support; A flat display device wherein the electron emission layer located at the bottom of the opening corresponds to the electron emission portion. The method of claim 12, The insulating layer covers the electron emission layer; The opening penetrates the electron emitting layer; The flat display device of claim 1, wherein the electron emission unit comprises an end portion of the electron emission layer exposed on the sidewall surface of the opening. The method of claim 4, wherein The first panel has a cold cathode field emission device in the effective area, the second panel has an anode electrode and a phosphor layer in the effective area, the cold cathode field emission device, (A) an insulating layer formed on the support, (B) a gate electrode formed on the insulating layer, at least a portion of which is made of a gas trapping material, (C) an opening penetrating the gate electrode and formed in the insulating layer, and (D) an electron emission portion formed in the opening Made up of And the gate electrode functions as the getter. The method of claim 19, A flat panel display device having a single layer structure made of a gas trapping material. The method of claim 19, A flat panel display device having a stacked structure of at least a first layer made of a conductive material or an insulating material and a second layer made of a gas trapping material. The method of claim 19, A cathode electrode is formed on the support; An insulating layer is formed on the cathode electrode and the support; The electron emission unit is formed on the cathode electrode positioned at the bottom of the opening. The method of claim 19, An electron emission layer is formed on the support; An insulating layer is formed on the electron emission layer and the support; A flat display device wherein the electron emission layer located at the bottom of the opening corresponds to the electron emission portion. The method of claim 19, The insulating layer covers the electron emission layer; The opening penetrates the electron emitting layer; The flat display device of claim 1, wherein the electron emission unit comprises an end portion of the electron emission layer exposed on the sidewall surface of the opening. The method of claim 4, wherein The first panel has a cold cathode field emission device in the effective area, the second panel has an anode electrode and a phosphor layer in the effective area, the cold cathode field emission device, (A) an insulating layer formed on the support, (B) a gate electrode formed on the insulating layer, (C) a second insulating layer formed on the gate electrode and the insulating layer, (D) a converging electrode formed on the second insulating layer, the at least part of which is made of a gas trapping material, (E) an opening penetrating through the converging electrode, the second insulating layer and the gate electrode, and formed in the insulating layer, (F) an electron emission portion formed in the opening Made up of And the converging electrode functions as the getter. The method of claim 25, The converging electrode has a single layer structure made of a gas trapping material. The method of claim 25, The converging electrode has a stacked structure of at least a first layer made of a conductive material or an insulating material and a second layer made of a gas trapping material. The method of claim 25, A cathode electrode is formed on the support; An insulating layer is formed on the cathode electrode and the support; The electron emission unit is formed on the cathode electrode positioned at the bottom of the opening. The method of claim 25, An electron emission layer is formed on the support; An insulating layer is formed on the electron emission layer and the support; A flat display device wherein the electron emission layer located at the bottom of the opening corresponds to the electron emission portion. The method of claim 25, The insulating layer covers the electron emission layer; The opening penetrates through the electron emission layer, and the electron emission portion includes an end portion of the electron emission layer exposed on the sidewall surface of the opening. The method of claim 4, wherein The first panel has a cold cathode field emission device in the effective area, the second panel has an anode electrode and a phosphor layer in the effective area, the cold cathode field emission device, (A) a spacer made of an insulating material disposed on a support, (B) a gate electrode formed of a gas trapping material layer in which a plurality of openings are formed, and at least part of which is made of a gas trapping material, and (C) an electron emission portion formed on the support Made up of A flat display device in which a gas trapping material layer is fixed so as to contact a top surface of a spacer and an opening is located above an electron emission portion. A method of manufacturing a flat panel display device in which a first panel and a second panel having an effective area in which pixels are arranged are disposed to face each other with a vacuum layer interposed therebetween, and the first panel and the second panel joined at a peripheral portion thereof. And forming a getter in at least one effective region of the second panel. 33. The method of claim 32, The first panel includes a cold cathode field emission device in the effective region, the second panel includes an anode electrode and a phosphor layer in the effective region, and the first panel is provided. (a) forming an insulating layer on a support, (b) forming a conductive material layer for forming a gate electrode on the insulating layer, (c) forming a getter forming layer on the conductive material layer, (d) forming a gate electrode with a getter formed on the upper surface by patterning the getter formation layer and the conductive material layer; (e) forming openings in at least an insulating layer, and (f) A method of manufacturing a flat panel display device, which is formed through a process of forming or exposing an electron emission portion in an opening portion. The method of claim 33, wherein The step of forming the getter forming layer of step (c) includes the steps of (1) forming a support member having irregularities on the surface or a porous body on the conductive material layer for forming the gate electrode, and (2) the surface of the support member. And forming a gas trapping layer on the support member. The method of claim 34, wherein In the step (1), the manufacturing method of the flat display device which forms the support member which has unevenness | corrugation on the surface using substantially hemispherical silicon particle. The method of claim 34, wherein In the step (1), the manufacturing method of the flat panel display device which forms a support member which consists of porous bodies using at least 1 sort (s) of material chosen from the group which consists of a silicon oxide, silicon nitride, and silicon oxynitride. The method of claim 36, The step of forming a support member made of a porous body has a pyrolyzer or a step of forming a support member forming film containing a solvent, and a heat decomposition of the support member forming film to decompose the soft cracker or the solvent. Method of manufacturing a flat panel display device comprising a process of vaporizing The method of claim 36, The process of forming the support member made of porous material includes the steps of forming a support member forming film containing a plurality of components having different etching rates, the process of phase separating the plurality of components by heat treatment of the support member forming film, and the etching rate A method of manufacturing a flat panel display device, which comprises a step of etching away a component of a relatively faster one. The method of claim 36, The method of forming a support member made of a porous body includes a step of forming a support member forming film containing a plurality of components having different etching rates and a step of etching away components having a relatively higher etching rate. . The method of claim 33, wherein In the step (a), after forming the cathode on the support, an insulating layer is formed on the cathode and the support, and in the step (f), an electron emission portion is formed on the cathode located at the bottom of the opening. Method of manufacturing the device. The method of claim 33, wherein In the step (a), after the electron emission layer is formed on the support, an insulating layer is formed on the electron emission layer and the support, and in the step (f), the electron emission layer located at the bottom of the opening is exposed. A method of manufacturing a flat panel display device to expose an electron emission unit in an opening. The method of claim 33, wherein In the step (a), an insulating layer covering the electron emission layer is formed, and in the step (f), an end of the electron emission layer is exposed on the sidewall surface of the opening to form an electron emission portion. 33. The method of claim 32, The first panel includes a cold cathode field emission device in the effective region, the second panel includes an anode electrode and a phosphor layer in the effective region, and the first panel is provided. (a) forming an insulating layer on a support, (b) forming a gate electrode on the insulating layer, (c) forming a second insulating layer on the insulating layer and the gate electrode; (d) forming a conductive material layer for forming a converging electrode on the second insulating layer, (e) forming a getter forming layer on the conductive material layer, (f) process of forming a convergent electrode in which a getter was formed in the upper surface by patterning a getter formation layer and a conductive material layer, (g) forming openings in at least the second insulating layer and the insulating layer, and (h) A method of manufacturing a flat panel display device, which is formed through a process of forming or exposing an electron emission portion in an opening portion. The method of claim 43, The step of forming the getter forming layer of step (e) comprises the steps of (1) forming a support member having unevenness on the surface or a porous body on the conductive material layer for forming a converging electrode, and (2) the surface of the support member. A method of manufacturing a flat panel display device comprising the step of forming a gas trapping layer on a support member. The method of claim 44, In the step (1), the manufacturing method of the flat display device which forms the support member which has unevenness | corrugation on the surface using substantially hemispherical silicon particle. The method of claim 44, In the step (1), the manufacturing method of the flat panel display device which forms a support member which consists of porous bodies using at least 1 sort (s) of material chosen from the group which consists of a silicon oxide, silicon nitride, and silicon oxynitride. 47. The method of claim 46 wherein The step of forming a support member made of a porous body includes a step of forming a support member forming film having a pyrolysis or containing a solvent, and a step of decomposing a soft cracker or vaporizing a solvent by heat treatment of the support member forming film. Manufacturing method of a flat panel display device, 47. The method of claim 46 wherein The process of forming a support member made of porous material includes forming a support member formation film containing a plurality of components having different etching rates, phase separating the plurality of components by heat treatment of the support member formation film, and a relatively faster etching speed. A method of manufacturing a flat panel display device, the method comprising the step of etching away the components of the film. 47. The method of claim 46 wherein The step of forming a support member made of a porous body includes a step of forming a support member forming film containing a plurality of components having different etching rates, and a step of etching away components having a relatively higher etching rate. Manufacturing method. The method of claim 43, In the step (a), after forming the cathode on the support, an insulating layer is formed on the cathode and the support, and in the step (h), an electron emission portion is formed on the cathode located at the bottom of the opening. Method of manufacturing the device. The method of claim 43, In the step (a), after the electron emission layer is formed on the support, an insulating layer is formed on the electron emission layer and the support, and in step (h), the electron emission layer located at the bottom of the opening is exposed. A method of manufacturing a flat panel display device to expose an electron emission unit in an opening. The method of claim 43, In step (a), an insulating layer covering the electron emission layer is formed, and in step (h), an end of the electron emission layer is exposed on the sidewall surface of the opening to form an electron emission portion. 33. The method of claim 32, The first panel includes a cold cathode field emission device in the effective region, the second panel includes an anode electrode and a phosphor layer in the effective region, and the first panel is provided. (a) forming an insulating layer on a support, (b) forming a gate electrode on the insulating layer, (c) forming a getter on the gate electrode and / or on an insulating layer between adjacent gate electrodes, (d) forming openings in at least the insulating layer, and (e) A method of manufacturing a flat panel display device, which is formed through a process of forming or exposing an electron emission portion in an opening portion. The method of claim 53, The step of forming the getter of the step (c) includes the steps of (1) forming a support member having irregularities on the surface or made of a porous body on the insulating layer between the gate electrode and / or adjacent gate electrodes; and (2 ) A method of manufacturing a flat panel display device, comprising forming a gas trapping layer on a surface of a support member. 55. The method of claim 54, In the step (1), the manufacturing method of the flat display device which forms the support member which has unevenness | corrugation on the surface using substantially hemispherical silicon particle. 55. The method of claim 54, In the step (1), the manufacturing method of the flat panel display device which forms a support member which consists of porous bodies using at least 1 sort (s) of material chosen from the group which consists of a silicon oxide, silicon nitride, and silicon oxynitride. The method of claim 56, wherein The step of forming a support member made of a porous body includes a step of forming a support member forming film having a pyrolysis or containing a solvent, and a step of decomposing a soft cracker or vaporizing a solvent by heat treatment of the support member forming film. Manufacturing method of a flat panel display device, The method of claim 56, wherein The step of forming a support member made of porous material includes forming a support member forming film containing a plurality of components having different etching rates, phase separating the plurality of components by heat treatment of the supporting member forming film, and a relatively high etching rate. A method of manufacturing a flat panel display device, the method comprising the step of etching away the components of the film. The method of claim 56, wherein The step of forming a support member made of a porous body includes a step of forming a support member forming film containing a plurality of components having different etching rates, and a step of etching away components having a relatively higher etching rate. Manufacturing method. The method of claim 53, In the step (a), the cathode is formed on the support, and then an insulating layer is formed on the cathode and the support, and in the step (e), the planar display is formed on the cathode electrode located at the bottom of the opening. Method of manufacturing the device. The method of claim 53, In the step (a), after the electron emission layer is formed on the support, an insulating layer is formed on the electron emission layer and the support, and in the step (e), the electron emission layer located at the bottom of the opening is exposed. A method of manufacturing a flat panel display device to expose an electron emission unit in an opening. The method of claim 53, In step (a), an insulating layer covering the electron emission layer is formed, and in step (e), an end of the electron emission layer is exposed on the sidewall surface of the opening to form an electron emission portion. 33. The method of claim 32, The first panel includes a cold cathode field emission device in the effective region, the second panel includes an anode electrode and a phosphor layer in the effective region, and the first panel is provided. (a) forming an insulating layer on a support, (b) forming a gate electrode on the insulating layer, (c) forming a second insulating layer on the insulating layer and the gate electrode; (d) forming a converging electrode on the second insulating layer, (e) forming a getter on the convergence electrode and / or on the second insulating layer between adjacent convergence electrodes, (f) forming openings in at least the second insulating layer and the insulating layer, and (g) A method of manufacturing a flat panel display device, which is formed through a process of forming or exposing an electron emission portion in an opening portion. The method of claim 63, wherein The step of forming the getter of the step (e) includes the steps of (1) forming a support member having unevenness on the surface or made of a porous body on the second electrode and between the adjacent electrode and / or the adjacent electrode; (2) A method of manufacturing a flat panel display device, which comprises forming a gas trapping layer along a surface of a support member on a support member. 65. The method of claim 64, In the step (1), the manufacturing method of the flat display device which forms the support member which has unevenness | corrugation on the surface using substantially hemispherical silicon particle. 65. The method of claim 64, In the step (1), the manufacturing method of the flat panel display device which forms a support member which consists of porous bodies using at least 1 sort (s) of material chosen from the group which consists of a silicon oxide, silicon nitride, and silicon oxynitride. The method of claim 66, The step of forming a support member made of a porous body includes a step of forming a support member forming film having a pyrolysis or containing a solvent, and a step of decomposing a soft cracker or vaporizing a solvent by heat treatment of the support member forming film. Manufacturing method of a flat panel display device, The method of claim 66, The process of forming a support member made of porous material includes forming a support member formation film containing a plurality of components having different etching rates, phase separating the plurality of components by heat treatment of the support member formation film, and a relatively faster etching speed. A method of manufacturing a flat panel display device, the method comprising the step of etching away the components of the film. The method of claim 66, The step of forming a support member made of a porous body includes a step of forming a support member forming film containing a plurality of components having different etching rates, and a step of etching away components having a relatively higher etching rate. Manufacturing method. The method of claim 63, wherein In the step (a), after forming the cathode on the support, an insulating layer is formed on the cathode and the support, and in the step (g), a flat display in which the electron emission portion is formed on the cathode electrode located at the bottom of the opening. Method of manufacturing the device. The method of claim 63, wherein In the step (a), after the electron emission layer is formed on the support, an insulating layer is formed on the electron emission layer and the support. In step (g), the electron emission layer located at the bottom of the opening is exposed. A method of manufacturing a flat panel display device to expose an electron emission unit in an opening. The method of claim 63, wherein In step (a), an insulating layer covering the electron emission layer is formed, and in step (g), an end of the electron emission layer is exposed on the sidewall surface of the opening to form an electron emission portion. 33. The method of claim 32, The first panel includes a cold cathode field emission device in the effective region, the second panel includes an anode electrode and a phosphor layer in the effective region, and the first panel is provided. (a) forming an insulating layer on a support, (b) forming a gate electrode at least partially formed of a gas trapping material on the insulating layer, and functioning as a getter; (c) forming an opening in at least an insulating layer, and (d) A method of manufacturing a flat panel display device, which is formed through a process of forming or exposing an electron emission portion in an opening portion. The method of claim 73, A method of manufacturing a flat panel display device having a single layer structure comprising a gate electrode made of a gas trapping material. The method of claim 73, A method of manufacturing a flat panel display device having a stacked structure of at least a gate electrode having a first layer made of a conductive material or an insulating material and a second layer made of a gas trapping material. The method of claim 73, In the step (a), after forming the cathode electrode on the support, an insulating layer is formed on the cathode and the support, and in the step (d), the flat display in which the electron emission portion is formed on the cathode electrode located at the bottom of the opening. Method of manufacturing the device. The method of claim 73, In the step (a), after the electron emission layer is formed on the support, an insulating layer is formed on the electron emission layer and the support, and in the step (d), the electron emission layer located at the bottom of the opening is exposed. A method of manufacturing a flat panel display device exposing an electron emission unit in an opening; The method of claim 73, In step (a), an insulating layer covering the electron emission layer is formed, and in step (d), an end of the electron emission layer is exposed on the sidewall surface of the opening to form an electron emission portion. 33. The method of claim 32, The first panel includes a cold cathode field emission device in the effective region, the second panel includes an anode electrode and a phosphor layer in the effective region, and the first panel is provided. (a) forming an insulating layer on a support, (b) forming a gate electrode on the insulating layer, (c) forming a second insulating layer on the insulating layer and the gate electrode; (d) forming a converging electrode at least partially formed of a gas trapping material on the second insulating layer and functioning as a getter; (e) forming openings in at least the second insulating layer and the insulating layer, and (f) A method of manufacturing a flat panel display device, which is formed through a process of forming or exposing an electron emission portion in an opening portion. The method of claim 79, A method of manufacturing a flat panel display device having a single layer structure made of a gas capturing material. The method of claim 79, The converging electrode has a laminated structure of at least a first layer made of a conductive material or an insulating material and a second layer made of a gas trapping material. The method of claim 79, In the step (a), after forming the cathode on the support, an insulating layer is formed on the cathode and the support, and in the step (f), an electron emission portion is formed on the cathode located at the bottom of the opening. Method of manufacturing the device. The method of claim 79, In the step (a), after the electron emission layer is formed on the support, an insulating layer is formed on the electron emission layer and the support, and in the step (f), the electron emission layer located at the bottom of the opening is exposed. A method of manufacturing a flat panel display device exposing an electron emission unit in an opening; The method of claim 79, In the step (a), an insulating layer covering the electron emission layer is formed, and in the step (f), an end of the electron emission layer is exposed on the sidewall surface of the opening to form an electron emission portion. 33. The method of claim 32, The first panel includes a cold cathode field emission device in the effective region, the second panel includes an anode electrode and a phosphor layer in the effective region, and the first panel is provided. (a) disposing a spacer made of an insulating material on the support, and forming an electron emission portion on the support; (b) a plurality of openings are formed, and at least a portion thereof is formed through a process of fixing a gate electrode composed of a gas trapping material layer made of a gas trapping material to be in contact with the top surface of the spacer and to be positioned above the electron emission section. Method of manufacturing a flat panel display device